CN111725044A - Seasoning method and etching method of substrate - Google Patents

Seasoning method and etching method of substrate Download PDF

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Publication number
CN111725044A
CN111725044A CN201910216389.6A CN201910216389A CN111725044A CN 111725044 A CN111725044 A CN 111725044A CN 201910216389 A CN201910216389 A CN 201910216389A CN 111725044 A CN111725044 A CN 111725044A
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etching
chamber
substrate
sub
warming
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CN111725044B (en
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张君
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The invention provides a warm-up method and a substrate etching method for enabling a cavity to reach a working state required by a process by adopting the warm-up method. The warming-up method includes step S1: first etching the optical film to cover the resulting polymer on surfaces of the component exposed to a process environment within the chamber; step S2: the optical film is subjected to a second etch for adding polymer to the surface of the quartz cover exposed to the process environment within the chamber. By adding the second etching step on the basis of the first etching step, a layer of thick and compact polymer can be deposited on the surface of the quartz cover, so that polymer particles covered on the surface of the quartz cover are not easy to fall off in the subsequent process of etching the substrate, the particle defect on the substrate is avoided, and the yield of products is improved.

Description

Seasoning method and etching method of substrate
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a warm-up method and a substrate etching method.
Background
An ICP (inductively Coupled Plasma) etching process is a dry etching process commonly used in a process of manufacturing a semiconductor device such as an LED (Light-Emitting Diode). The warm-up (Season) step is an important process step in the ICP etching process, and particularly needs to be performed for an unused brand new etching chamber, an etching chamber after Periodic Maintenance (PM) and an etching chamber with too long Idle time (Idle) so as to improve the stability and the uniformity among wafers of the etching chamber.
Experiments show that the etching rate of the warmed etching chamber is about 30% higher than that of the unheated etching chamber, and the etching selection ratio (the ratio of the etching rate of the substrate to the etching rate of the photoresist) is 30% -50% higher. This is due to: the surfaces of components exposed to the process environment within the etch chamber, such as liners, quartz covers, chucks, etc., are not smooth at the microscopic scale, resulting in more inelastic collisions and more losses of the plasma at the surfaces of these components. After the warm-up step, polymers generated by etching the optical film are deposited on the surfaces of the parts, and the unsmooth degree of the parts on the microscopic scale is weakened, so that inelastic collision of plasmas on the surfaces of the parts is reduced, the proportion of elastic scattering is increased, the density of plasmas is increased, and the etching rate is increased. And, according to the luxatel principle, when etching a substrate, the polymer deposited on the surfaces of these components can reduce the etching rate of the photoresist on the substrate, which is close to the polymer composition, thereby improving the etching selectivity.
The warming step usually employs boron trichloride (BCl)3) The gas acts as an etching gas. The formula of the technological parameters of the common warming-up step is as follows: the pressure in the etching chamber is 3-5 mT, the temperature is 0-20 ℃, the radio frequency power (SRF) of the upper electrode is 1800W, the radio frequency power (BRF) of the lower electrode is 300W, and BCl3The gas flow rate was 150sccm and the etching duration was 45 min.
However, in the actual production process, the inventors found that: in the warm-up step in the prior art, the amount of polymer covered on the surface of the quartz cover is not enough, and in the subsequent process of etching the substrate, polymer particles are easy to fall on the substrate, so that particle defects (bright defects) on the substrate are caused, and the yield of products is influenced.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art, and provides a warming-up method and a substrate etching method, which can avoid the particle defect on a substrate caused by falling of polymer particles on the substrate.
To achieve the object of the present invention, there is provided a warm-up method for bringing a chamber to an operating state required for a process, the warm-up method comprising:
step S1: first etching the optical film to cover the resulting polymer on the surface of the component exposed to the process environment within the chamber;
step S2: the optical film is subjected to a second etch for adding the polymer to a surface of the quartz cover exposed to a process environment within the chamber.
Preferably, the steps S1 and S2 are alternately performed at least twice.
Preferably, the excitation power ranges from 1000W to 1200W.
Preferably, the chamber pressure used in step S2 is greater than the chamber pressure used in step S1.
Preferably, the value range of the chamber pressure adopted in the step S1 is 3mT to 50 mT; the value range of the chamber pressure adopted in the step S2 is 50mT to 100 mT.
Preferably, the flow rate of the process gas used in the step S2 is greater than the flow rate of the process gas used in the step S1.
Preferably, the flow rate of the process gas adopted in the step S1 ranges from 100sccm to 200 sccm; the flow rate of the process gas adopted in the step S2 ranges from 200sccm to 300 sccm.
Preferably, the step S1 includes a plurality of sub-steps, and in each sub-step, the optical film is respectively etched for a preset time.
Preferably, the chamber pressure used in the latter said sub-step is less than the chamber pressure used in the preceding said sub-step.
Preferably, the flow rate of the process gas used in the latter sub-step is smaller than the flow rate of the process gas used in the former sub-step.
Preferably, the process time of the next said sub-step is greater than the process time of the previous said sub-step.
The invention provides a method for etching a substrate, which comprises the steps of adopting the warm-up method to enable a cavity to reach a working state required by the process; and placing a substrate in the chamber to reach the working state required by the process, and etching the substrate.
The invention has the following beneficial effects:
the warm-up method provided by the invention is used for enabling the chamber to reach the working state required by the process. Includes step S1: first etching the optical film to cover the resulting polymer on the surface of the component exposed to the process environment within the chamber; step S2: the optical film is subjected to a second etch for adding the polymer to a surface of the quartz cover exposed to a process environment within the chamber. By adding the second etching step on the basis of the first etching step, a layer of thick and compact polymer can be deposited on the surface of the quartz cover, so that polymer particles covered on the surface of the quartz cover are not easy to fall off in the subsequent process of etching the substrate, the particle defect on the substrate is avoided, and the yield of products is improved.
The invention provides a substrate etching method, which comprises the steps of firstly adopting the warm-up method to enable a cavity to reach a working state required by the process; the substrate is then placed in the chamber and etched. Because a layer of thicker and compact polymer is deposited on the surface of the quartz cover during warm-up, polymer particles covered on the surface of the quartz cover are not easy to drop in the subsequent process of etching the substrate, so that the particle defect on the substrate can be avoided, and the yield of products is improved.
Drawings
FIG. 1 is a flow chart of a warm-up method provided by the present invention;
FIG. 2 is a schematic view of a prior art polymer covering of a quartz cover surface;
FIG. 3 is a schematic view of the polymer covering the surface of the quartz cover of the present invention.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the warm-up method and the substrate etching method provided by the present invention will be described in detail below with reference to the accompanying drawings.
Referring to fig. 1, the warm-up method provided by the present invention is used to bring the chamber to the working state required by the process. First, a first etching is performed on the photo film to cover the generated polymer on the surface of the component exposed to the process environment in the chamber, such as the surface of the liner, quartz cover, chuck, etc., with the polymer in step S1; then, a second etch is performed on the wafer in step S2 for adding polymer to the surface of the quartz cover exposed to the process environment within the chamber. According to the method, a second etching step S2 is added on the basis of the first etching step S1, so that a layer of thick and compact polymer is deposited on the surface of the quartz cover, and therefore when the cavity works in the follow-up process, polymer particles covered on the surface of the quartz cover are not prone to falling off in the process of etching the substrate, particle defects on the substrate are avoided, and the yield of products is improved. Preferably, the above steps S1 and S2 are alternately performed to increase the thickness of the polymer until the chamber reaches a working state required for the process.
It is understood that in step S1, the power of the excitation power source, i.e., the upper electrode radio frequency power (SRF), is set to reduce the voltage difference at different positions of the coil, thereby reducing the etch rate difference at different positions of the quartz cover. Referring to both fig. 2 and 3, because the quartz cover is located below the coil, the etch rate on the quartz cover is maximized when the excitation power is applied to the coil as compared to other components exposed to the process environment within the chamber. Furthermore, the quartz cover is provided with a region (1) corresponding to the higher voltage of the coil and a region (2) corresponding to the lower voltage of the coil, and different etching depths are obtained due to different etching rates, which finally results in the occurrence of an etched trench (gap). The larger the excitation power, the larger the difference in etching rate, and the deeper the trench depth, the less easily the sidewalls (3) are covered with polymer (4). Compared with the prior art, the invention properly reduces the power of the excitation power supply to reduce the difference of the etching rate of the quartz cover at different positions corresponding to different voltages on the coil, thereby reducing the depth of the groove to ensure that the polymer (4 ') can better cover the side wall (3') of the groove. Preferably, the excitation power adopted in step S1 has a value ranging from 1000W to 1200W.
It is understood that in step S2, a second etch at a higher pressure and/or higher flow rate than the first etch may be used to add polymer to the surface of the quartz cover. Because of the different gas pressures and/or flow rates, gas molecules can be made to have different mean free paths, in particular, higher pressures and/or flow rates can make molecules have shorter mean free paths. Therefore, the second etching with high pressure and/or high flow rate can deposit more polymer on the surface of the quartz cover located above the chamber than the first etching, so that the polymer can be tightly bonded to the surface of the quartz cover. Preferably, the chamber pressure used in step S1 is in the range of 3mT to 50mT, and the chamber pressure used in step S2 is in the range of 50mT to 100 mT. The process gas for the first etching and the second etching may be BCl3The flow rate of the process gas used in step S1 ranges from 100sccm to 200sccm, and the flow rate of the process gas used in step S2 ranges from 200sccm to 300 sccm.
Preferably, in step S2, the process time may be 10min to ensure that a thicker layer of dense polymer can be deposited on the surface of the quartz cover.
It is understood that the step S1 may further include a plurality of sub-steps S11-S1 n (n is a natural number not less than 2), in each of which the optical film is first etched for a preset time period. Wherein, the chamber pressure adopted by the next sub-step is less than that adopted by the previous sub-step, and the chamber pressure adopted by the sub-steps S11-S1 n ranges from 3mT to 50 mT. The flow rate of the process gas used in the next sub-step may be smaller than the flow rate of the process gas used in the previous sub-step, and the flow rates of the process gases used in the plurality of sub-steps S11 to S1n may range from 100sccm to 200 sccm. As with the second etching process using high pressure and/or high flow in step S2, different gas pressures and/or flow rates can provide different mean free paths for gas molecules, and as the chamber pressure is gradually reduced and/or the flow rate of the process gas is gradually reduced, the polymer can be more uniformly deposited on the surfaces of the quartz lid, liner, chuck, etc. above, in the middle, below the chamber.
Preferably, the process time of the next sub-step may be longer than that of the previous sub-step, and the process times of the sub-steps S11 to S1n are controlled within 8 min.
Next, a set of process parameters is selected to specifically explain the warming-up method and the effect thereof provided by the present invention. Because the main component of the quartz cover is silicon dioxide (SiO)2) So when the process gas is BCl3In the meantime, the main chemical formulas of the warm-up etching and the main etching are:
BCl3+SiO2—SiClX+BOClXwherein X is a natural number.
Step S1 is first performed by first etching the optical film to cover the resulting polymer on the surface of the component exposed to the process environment within the chamber. Specifically, the step S1 includes five substeps S11-S15, in each substep, the optical film is first etched for a preset duration, and the process parameters are as follows:
s11: the pressure of the chamber is 50mT, the temperature is 0-20 ℃, the radio frequency power (SRF) of the upper electrode is 1000-1200W, the radio frequency power (BRF) of the lower electrode is 300W, and BCl3The gas flow is 200sccm, and the process time is not more than 4 min;
s12: the pressure of the chamber is 40mT, the temperature is 0-20 ℃, the radio frequency power (SRF) of the upper electrode is 1000-1200W, the radio frequency power (BRF) of the lower electrode is 300W, and BCl3The gas flow is 200sccm, and the process time is not more than 5 min;
s13: the pressure of the chamber is 10mT, the temperature is 0-20 ℃, the radio frequency power (SRF) of the upper electrode is 1000-1200W, the radio frequency power (BRF) of the lower electrode is 300W, and BCl3The gas flow is 200sccm, and the process time is not more than 6 min;
s14: the pressure of the chamber is 5mT, the temperature is 0-20 ℃, the radio frequency power (SRF) of the upper electrode is 1000W-1200W, the radio frequency power (BRF) of the lower electrode is 300W, and BCl3The gas flow is 150sccm, and the process time is not more than 7 min;
s15: chamberThe chamber pressure is 3mT, the temperature is 0-20 ℃, the upper electrode radio frequency power (SRF) is 1000-1200W, the lower electrode radio frequency power (BRF) is 300W, BCl3The gas flow is 100sccm, and the process time is not more than 8 min.
Wherein, in sub-steps S11 and S12, the polymer is mainly deposited on a surface of a component, such as a quartz cover, located above the chamber; in sub-steps S12 and S13, the polymer is mainly deposited on a component located in the middle of the chamber, such as the surface of the liner; in sub-steps S14 and S15, the polymer is mainly deposited on a component located below the chamber, such as a chuck surface.
Step S2 is performed after step S1, where the photo film is subjected to a second etch for adding polymer to the surface of the quartz lid exposed to the process environment within the chamber. The technological parameters are as follows: the pressure of the chamber is 50 mT-100 mT, the temperature is 0-20 ℃, the radio frequency power (SRF) of the upper electrode is 1000W-1200W, the radio frequency power (BRF) of the lower electrode is 300W, and BCl3The gas flow is 200 sccm-300 sccm, and the process time is 10 min. In step S2, the polymer is deposited primarily on the surface of the quartz cover.
By adopting the process parameters, only 3 discs of optical films are needed, and each disc of process time is about 40 minutes, namely 120 minutes in total, so that the warm-up can be completed, and the chamber can reach the working state required by the process. Compared with the prior art, 8-10 reels of light films are needed, the process time of each reel is about 45 minutes, namely 360-450 minutes in total, and the warm-up time is shortened by 4-5.5 hours. Not only can make in the follow-up technology of carrying out the sculpture to the substrate, the polymer granule that quartz cover surface covered is difficult to drop, avoids causing the granule defect on the substrate, improves the yield of product, but also has shortened warm-up time, has reduced warm-up cost.
The invention also provides a substrate etching method, which comprises the steps of firstly adopting any one of the warm-up methods to enable the cavity to reach the working state required by the process; the substrate is then placed in a chamber to achieve the desired operating conditions for the process and etched. Because a layer of thicker and compact polymer is deposited on the surface of the quartz cover during warm-up, polymer particles covered on the surface of the quartz cover are not easy to drop in the subsequent process of etching the substrate, so that the particle defect on the substrate can be avoided, and the yield of products is improved.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.

Claims (12)

1. A warm-up method for bringing a chamber to an operating state required for a process, the warm-up method comprising:
step S1: first etching the optical film to cover the resulting polymer on the surface of the component exposed to the process environment within the chamber;
step S2: the optical film is subjected to a second etch for adding the polymer to a surface of the quartz cover exposed to a process environment within the chamber.
2. A warming method according to claim 1, wherein the steps S1 and S2 are alternately performed at least twice.
3. A warming-up method according to claim 1, wherein the excitation power used in the step S1 has a value ranging from 1000W to 1200W.
4. A warming method according to claim 1, wherein the chamber pressure adopted in the step S2 is larger than the chamber pressure adopted in the step S1.
5. A warming-up method according to claim 4, wherein the chamber pressure used in the step S1 is in a range of 3mT to 50 mT; the value range of the chamber pressure adopted in the step S2 is 50mT to 100 mT.
6. A warming method according to claim 1, wherein a flow rate of the process gas used in the step S2 is larger than a flow rate of the process gas used in the step S1.
7. A warming-up method according to claim 6, wherein the flow rate of the process gas used in the step S1 is in a range of 100sccm to 200 sccm; the flow rate of the process gas adopted in the step S2 ranges from 200sccm to 300 sccm.
8. A warming method according to claim 1, wherein said step S1 includes a plurality of sub-steps, and in each of said sub-steps, said first etching is performed on said optical film for a predetermined time period.
9. A warming method according to claim 8, wherein the chamber pressure used in the succeeding sub-step is lower than the chamber pressure used in the preceding sub-step.
10. A warming method according to claim 9, wherein a flow rate of the process gas used in the succeeding sub-step is smaller than a flow rate of the process gas used in the preceding sub-step.
11. A warming method according to claim 10, wherein a process time of a succeeding said sub-step is longer than a process time of a preceding said sub-step.
12. A method of etching a substrate, comprising:
a warm-up method according to any one of claims 1 to 11 is adopted to enable the chamber to reach a working state required by the process;
and placing a substrate in the chamber to reach the working state required by the process, and etching the substrate.
CN201910216389.6A 2019-03-21 2019-03-21 Warming-up method and etching method of substrate Active CN111725044B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116288275A (en) * 2023-03-20 2023-06-23 上海华力集成电路制造有限公司 Process chamber warming method of titanium aluminum deposition machine

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JP2015088696A (en) * 2013-11-01 2015-05-07 株式会社日立ハイテクノロジーズ Plasma processing method
CN106504996A (en) * 2015-09-07 2017-03-15 北京北方微电子基地设备工艺研究中心有限责任公司 Method of warming up and the lithographic method of substrate

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US6479098B1 (en) * 2000-12-26 2002-11-12 Taiwan Semiconductor Manufacturing Company Method to solve particle performance of FSG layer by using UFU season film for FSG process
US20020104549A1 (en) * 2001-02-07 2002-08-08 Teng-Thun Yang Method of reconditioning reaction chamber
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116288275A (en) * 2023-03-20 2023-06-23 上海华力集成电路制造有限公司 Process chamber warming method of titanium aluminum deposition machine
CN116288275B (en) * 2023-03-20 2024-09-10 上海华力集成电路制造有限公司 Process chamber warming method of titanium aluminum deposition machine

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