CN111722473A - Method for saving photoresist on wafer by dynamic RRC coating - Google Patents
Method for saving photoresist on wafer by dynamic RRC coating Download PDFInfo
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- CN111722473A CN111722473A CN202010588651.2A CN202010588651A CN111722473A CN 111722473 A CN111722473 A CN 111722473A CN 202010588651 A CN202010588651 A CN 202010588651A CN 111722473 A CN111722473 A CN 111722473A
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- photoresist
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
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Abstract
The invention discloses a method for saving photoresist on a wafer by dynamic RRC coating, belonging to the technical field of semiconductor photoetching. The method has important significance in optimizing the formula, saving photoresist, reducing the process cost and reducing the development defects. Compared with the prior art, the dynamic RRC coating step is added before the glue dripping step in the glue coating process formula, so that the photoresist is saved, the process cost is reduced, the process quality is improved on the premise of ensuring the original standard requirement, the subsequent development defect is reduced, and the effects of reducing cost and improving quality are achieved.
Description
Technical Field
The invention relates to the technical field of semiconductor photoetching, in particular to a method for saving photoresist by dynamic RRC coating on a wafer.
Background
Semiconductor lithography processes are also continually advancing as the technology for manufacturing semiconductor integrated circuits and devices continues to advance and evolve. With the decreasing of the critical dimension of the device, the process cost is also increasing, so that the reduction of the process cost and the reduction of the photoresist consumption become more important. Reasons include, but are not limited to, the following: 1. to produce smaller and higher density circuits, multiple layers of photoresist are coated on a 12 inch (300mm) wafer, the amount of photoresist required is large, and the price of each layer of photoresist is expensive, so that the cost price of producing chips is higher and higher; 2. in the production process, the CP value of some photoresist is large, the photoresist is not easy to spread on the surface of the whole wafer uniformly during spin coating, so that photoresist in partial areas is accumulated, and the accumulation can cause serious influence on subsequent etching and other processes; 3. in the wafer coating process, micro bubbles invisible to naked eyes exist in the photoresist, which can affect subsequent etching and other processes.
For the above reasons, it is important to reduce the amount of photoresist used for the stacked coating of multiple layers of photoresist on a wafer because the amount of photoresist required is large and the price of each layer of photoresist is expensive. The RRC is used as a photoresist solvent, so that in the process of coating (see figure 1), the use amount of the photoresist can be reduced, the photoresist can be diluted, the mobility of the photoresist is increased, microscopic bubbles contained in the photoresist are reduced, the photoresist is uniformly coated on the surface of a wafer (see figure 2), and the RRC has an obvious optimization effect on subsequent processes such as development, etching and the like.
At present, in the process method of photoresist coating on the wafer, a dynamic RRC coating step is rarely added, and the advantages and the disadvantages are that:
the advantages of no RRC coating step during coating are: 1. the process time can be saved, and the productivity is relatively improved; 2. the RRC-free coating enables the mechanical structure and the control program of the gluing equipment to be relatively simple, the failure rate of the equipment can be relatively reduced, and the equipment cost is saved. The disadvantages are that: 1. the consumption of the photoresist is relatively large, so that the production process cost is increased; 2. the subsequent processes such as development, etching and the like have more defects, the process yield is low, and the requirements of high-performance integrated circuit devices cannot be met.
Disclosure of Invention
In order to solve the problems of large consumption of photoresist, high cost, more subsequent process defects and low process yield in the prior art, the invention aims to provide a method for saving photoresist by dynamic RRC coating on a wafer.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a method for saving photoresist on a wafer by dynamic RRC coating is used for coating the photoresist on the wafer and specifically comprises the following steps:
(1) sending the 12-inch wafer to be glued into a gluing unit;
(2) performing dynamic photoresist thinner RRC coating; RRC coating time is 2-10s, and wafer rotating speed is 20-50 rpm.
(3) Coating photoresist, wherein the consumption of the photoresist is 2-5 ml;
(4) adjusting the rotating speed of the wafer according to the requirement on the film thickness;
(5) and after the coating of the wafer is finished in the coating unit, the wafer is taken out by a robot, baked, sent to be exposed and developed, and finally the processed wafer is transferred back to the wafer box.
In the step (2), in the dynamic RRC coating process, the RRC coating time is determined according to the thickness, the characteristics and the like of the photoresist spin-coated on the wafer.
In the step (3), the consumption of the photoresist is determined according to the thickness, characteristics and the like of the photoresist spin-coated on the wafer.
The invention has the following advantages and beneficial effects:
1. the method of the invention utilizes the glue coating process formula, adds dynamic RRC coating before the glue dripping step, greatly reduces the usage amount of photoresist, reduces the process cost, improves the process quality on the premise of ensuring the original standard requirement, simultaneously reduces the subsequent development defect and improves the process yield.
2. The process quality is improved: the RRC is used as a photoresist solvent, so that the mobility of the photoresist is increased, microscopic bubbles contained in the photoresist are dissolved, the photoresist can be more uniformly coated on the surface of the wafer, the subsequent processes such as development, etching and the like are obviously optimized, the process yield is improved, and the requirement of a high-performance integrated circuit device can be met.
3. For the photoresists with different components and thicknesses, the conditions for realizing the optimal coating effect (observed by a photoresist film thickness change curve obtained by measuring a coated optical film thickness gauge) can be searched by adjusting parameters such as increasing or reducing the time length of an RRC coating step, RRC supply flow, pressure and the like.
Drawings
FIG. 1 is a schematic view of the coating process of the present invention.
FIG. 2 is a schematic diagram showing the distribution of RRC and photoresist on the wafer surface during the coating process.
Detailed Description
The invention is described in detail below with reference to the figures and examples.
The invention provides a method for saving photoresist by dynamic RRC coating on a wafer, which comprises the following specific processes:
taking out a 12-inch wafer to be coated with glue from a wafer box, conveying the wafer to a cold plate for cooling at 23 ℃, then conveying the wafer to a gluing unit for gluing, selecting a gluing formula for preparing to coat the photoresist, wherein the consumption of the photoresist is 10-20ml before an RRC step is not added;
secondly, modifying a gluing formula, adding a dynamic RRC coating step before a glue dripping step, and setting RRC coating time to be 2-10s, wherein the rotating speed is generally 20-50rpm (the specific RRC coating time is determined according to the thickness, the characteristics and the like of photoresist spin-coated on a wafer);
thirdly, coating the photoresist, wherein the consumption of the photoresist is 2-5ml and is far less than that of the photoresist used before the RRC step is not added (the specific consumption of the photoresist is determined according to the thickness, the characteristics and the like of the photoresist spin-coated on the wafer);
fourthly, after RRC coating is finished, photoresist coating is carried out, and the film thickness is adjusted through the main rotating speed;
and fifthly, after the coating process of the wafer is finished in the glue coating unit, taking out the wafer by a robot, baking, exposing, developing and finally transferring the processed wafer back to the wafer box.
Example 1:
a film process is carried out on a 12-inch wafer, and a certain photoresist is adopted, wherein the coating thickness is 0.2 mu m. Firstly, taking the wafer to be coated with glue out of the wafer box, sending the wafer to a cold plate unit for cooling for 60s at 23 ℃, and stabilizing the temperature of the wafer; then sending the wafer with the stable temperature into a gluing unit for preparing a gluing process, selecting a gluing process formula, wherein the consumption of the required photoresist is 10ml before RRC is not added, adding a dynamic RRC coating step before a glue dripping step on the basis of the original formula, setting the RRC coating time to be 5s, the rotating speed to be 30rpm, and the consumption required by the supply of the RRC of a chemical cabinet to be 20 ml; then, dripping the photoresist, wherein the consumption of the photoresist is 1.5ml, and adjusting the film thickness and the uniformity thereof through the main rotating speed; after the coating process of the wafer is finished in the glue coating unit, the wafer is taken out by a robot, is baked for 90s at 110 ℃ through a hot plate, is sent to be exposed and developed, and finally the whole film process is finished by the wafer and is conveyed to a wafer returning box.
As can be known from the above process, the consumption amount is 10ml before RRC is added, the price of the photoresist is 5 ten thousand yuan/gallon, and the one-time process cost is about 125 yuan; after the RRC addition step, the RRC setting time is 5s, the consumption amount required is 20ml, the RRC price is 300 yuan/gallon, and the consumption amount required for the photoresist is 1.5ml, and the total one-process cost is about 20 yuan.
Through data comparison, the cost of one-time process is reduced by more than 6 times before and after RRC is added. The method has obvious effect, greatly reduces the consumption of the photoresist and reduces the production process cost.
Example 2:
a film process is carried out on a 12-inch wafer, and a certain photoresist is adopted, wherein the coating thickness is 15 mu m. Firstly, taking the wafer to be coated with glue out of the wafer box, sending the wafer to a cold plate unit for cooling for 60s at 23 ℃, and stabilizing the temperature of the wafer; then sending the wafer with the stable temperature into a gluing unit for preparing a gluing process, selecting a gluing process formula, wherein the consumption of the required photoresist is 15ml before RRC is not added, adding a dynamic RRC coating step before a glue dripping step on the basis of the original formula, setting the RRC coating time to be 10s, the rotating speed to be 20rpm, and the consumption required by the supply of the RRC of a chemical cabinet to be 15 ml; then, dripping the photoresist, wherein the consumption of the photoresist is 3ml, and adjusting the film thickness and the uniformity thereof through the main rotating speed; after the coating process of the wafer is finished in the glue coating unit, the wafer is taken out by a robot, is baked for 90s at the temperature of 150 ℃ through a hot plate, is sent to be exposed and developed, and finally the whole film process is finished by the wafer and is conveyed to a wafer returning box.
As can be seen from the above process, the consumption amount is 15ml before RRC is added, the price of the photoresist is 5 ten thousand yuan/gallon, and the cost of one process is about 187.5 yuan; after the RRC addition step, the RRC setting time is 10s, the consumption amount is 15ml, the RRC price is 300 yuan/gallon, and the consumption amount of the photoresist is 3ml, so that the one-time process cost is about 39 yuan. In addition, the results obtained by the subsequent process flow are that the number of defects after development is about 2000 before RRC is not added, and the number of defects after development is reduced to about 500 after RRC is added.
Through data comparison, the cost of one-time process is reduced by about 4.5 times before and after RRC is added. Meanwhile, after the RRC is added, the subsequent development defect defects are reduced, and the process yield is improved. The method has obvious effect, greatly reduces the consumption of the photoresist, reduces the process cost, improves the process quality, reduces the subsequent development defects and improves the process yield on the premise of ensuring the original standard requirement.
Through the embodiment, the method has the advantages of saving photoresist, reducing process cost, improving process quality on the premise of ensuring the original standard requirement, reducing subsequent development defects and reducing cost and improving quality.
Claims (4)
1. A method for saving photoresist on a wafer by dynamic RRC coating is characterized in that: the method is used for coating photoresist on a wafer, and specifically comprises the following steps:
(1) sending the 12-inch wafer to be glued into a gluing unit;
(2) performing dynamic photoresist thinner RRC coating;
(3) coating photoresist, wherein the consumption of the photoresist is 2-5 ml;
(4) adjusting the rotating speed of the wafer according to the requirement on the film thickness;
(5) and after the coating of the wafer is finished in the coating unit, the wafer is taken out by a robot, baked, sent to be exposed and developed, and finally the processed wafer is transferred back to the wafer box.
2. The method for dynamic RRC coating photoresist on a wafer according to claim 1, wherein: in the step (2), in the dynamic RRC coating process, the RRC coating time is determined according to the thickness, the characteristics and the like of the photoresist spin-coated on the wafer.
3. The method for dynamic RRC coating photoresist on a wafer according to claim 1, wherein: in the step (2), the RRC coating time is 2-10s, and the wafer rotating speed is 20-50 rpm.
4. The method for wafer dynamic RRC coating photoresist saving according to claim 1, wherein: in the step (3), the consumption of the photoresist is determined according to the thickness, characteristics and the like of the photoresist spin-coated on the wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010588651.2A CN111722473A (en) | 2020-06-24 | 2020-06-24 | Method for saving photoresist on wafer by dynamic RRC coating |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010588651.2A CN111722473A (en) | 2020-06-24 | 2020-06-24 | Method for saving photoresist on wafer by dynamic RRC coating |
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| CN111722473A true CN111722473A (en) | 2020-09-29 |
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| CN202010588651.2A Pending CN111722473A (en) | 2020-06-24 | 2020-06-24 | Method for saving photoresist on wafer by dynamic RRC coating |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070128355A1 (en) * | 2005-12-06 | 2007-06-07 | Hynix Semiconductor, Inc. | Method for coating photoresist material |
| CN102375342A (en) * | 2010-08-24 | 2012-03-14 | 中芯国际集成电路制造(上海)有限公司 | Coating method of photoresist |
| CN102496586A (en) * | 2011-11-24 | 2012-06-13 | 上海宏力半导体制造有限公司 | Method for detecting photoresist defects |
-
2020
- 2020-06-24 CN CN202010588651.2A patent/CN111722473A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070128355A1 (en) * | 2005-12-06 | 2007-06-07 | Hynix Semiconductor, Inc. | Method for coating photoresist material |
| CN102375342A (en) * | 2010-08-24 | 2012-03-14 | 中芯国际集成电路制造(上海)有限公司 | Coating method of photoresist |
| CN102496586A (en) * | 2011-11-24 | 2012-06-13 | 上海宏力半导体制造有限公司 | Method for detecting photoresist defects |
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