CN111719135A - 制备金刚石单晶的激光等离子体cvd设备及其工作方法 - Google Patents
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Abstract
本发明公开制备金刚石单晶的激光等离子体CVD设备及其工作方法,包括下箱体、上箱体,下箱体与上箱体之间通过铰链转动连接,上箱体上安装有两个激光灯,下箱体一侧设置有微波发生器,微波发生器上安装有微波发射喇叭,微波发射喇叭贯穿下箱体侧壁,下箱体内安装有下基座,下基座上转动设置有下基台。本发明通过甲烷、丙酮、二氧化碳混合气体的储存设备通过碳气管向上箱体与下箱体形成的空间通入混合气体,开启激光灯,激光灯对籽晶进行照射,开启第一电机,两个第一电机输出轴配合齿轮带动齿盘转动,齿盘通过下基台带动籽晶转动,籽晶进行生长,解决现有技术中激光灯对籽晶的照射不全面,导致籽晶生长不快的技术问题。
Description
技术领域
本发明涉及金刚石生产技术领域,具体涉及制备金刚石单晶的激光等离子体CVD设备及其工作方法。
背景技术
普通的等离子体CVD设备合成单晶金刚石的合成速率比较低,且产量不高,如果需要提高速率则需要较大功率的微波源进行改进,这样在成本和能耗上会增大很多,从而增大了设备的成本,也限制了金刚石的高速批量制备。
专利文件(CN201810159834.5)公开了一种激光增强等离子体CVD制备单晶金刚石装置及其方法,采用激光增强的方法可以提高所激发等离子体的密度,提高气体的离解率,从而加快生长效率,激光照射到基片表面可以增加基片的表面温度,从而提高粒子的表面活性,提高生长质量,但是该CVD设备对籽晶的激光照射不全面,籽晶的生长并不快,同时生长后得到的金刚石需要取出后进行激光切割,这都导致金刚石的处理效率不高。
发明内容
本发明的目的在于提供一种制备金刚石单晶的激光等离子体CVD设备及其工作方法,解决以下技术问题:(1)通过甲烷、丙酮、二氧化碳混合气体的储存设备通过碳气管向上箱体与下箱体形成的空间通入混合气体,开启激光灯,激光灯对籽晶进行照射,开启第一电机,两个第一电机输出轴配合齿轮带动齿盘转动,齿盘通过下基台带动籽晶转动,籽晶进行生长,解决现有技术中激光灯对籽晶的照射不全面,导致籽晶生长不快的技术问题;(2)通过籽晶生长结束后得到金刚石片,开启第二电机,第二电机输出轴带动丝杆转动,丝杆配合丝杆连接块带动移动板在活动槽内滑动,伸缩气缸活塞杆通过连接板带动激光切割头下降,激光切割头对金刚石四周多晶进行切割,而后下基台带动金刚石转动,激光切割头对金刚石进行纵向分切,解决现有技术中籽晶生长得到金刚石后需要将金刚石取出进行激光切割,对金刚石的处理效率不高的技术问题。
本发明的目的可以通过以下技术方案实现:
制备金刚石单晶的激光等离子体CVD设备,包括下箱体、上箱体,所述下箱体与上箱体之间通过铰链转动连接,所述上箱体上安装有两个激光灯,所述下箱体一侧设置有微波发生器,所述微波发生器上安装有微波发射喇叭,所述微波发射喇叭贯穿下箱体侧壁,所述下箱体内安装有下基座,所述下基座上转动设置有下基台;
所述上箱体内壁顶部安装有顶座,所述顶座上开设有活动槽,所述活动槽上滑动安装有移动板,移动板上安装有伸缩气缸,所述伸缩气缸活塞杆端部安装有连接板,所述连接板上安装有激光切割头,所述下箱体底部安装有两个废气收集箱,所述废气收集箱内安装有抽气泵,所述废气收集箱连通下箱体,所述下箱体同侧外壁安装有抽真空管、碳气管,所述抽真空管、碳气管上均安装有开关阀。
进一步的,两个激光灯对称固定于上箱体两侧,所述上箱体上安装有把手。
进一步的,所述下箱体顶部四处侧边均开设有凹槽,所述上箱体底部四处侧边均安装有密封条,所述密封条与凹槽为配合构件。
进一步的,所述下基座为中空式结构,所述下基座内安装有两个第一电机,所述下基座内安装有定位轴,所述定位轴底部转动连接下基座内壁底部,两个第一电机分别设置于定位轴两侧,所述第一电机输出轴连接有齿轮,所述定位轴顶部轴端套设有齿盘,所述齿盘设置于下基座上方,所述齿盘固定于下基台底部,所述齿盘啮合连接两个齿轮。
进一步的,所述活动槽内转动设置有丝杆,所述顶座上安装有第二电机,所述第二电机输出轴连接丝杆,丝杆外周面转动套设有丝杆连接块,丝杆连接块固定连接移动板,所述移动板上安装有两个滑块,所述活动槽内安装有两个滑轨,两个滑块分别滑动连接两个滑轨。
进一步的,所述下箱体同侧壁安装有进水管、出水管,所述进水管、出水管设置于同一平面,所述进水管外接循环冷却设备的出水口,所述出水管外接循环冷却设备的进水口,所述下箱体内腔设置有U形管,所述U形管两端分别连通进水管、出水管。
进一步的,所述抽真空管、碳气管均连通下箱体侧壁,所述抽真空管外接真空泵,所述碳气管外接甲烷、丙酮、二氧化碳混合气体的储存设备。
进一步的,制备金刚石单晶的激光等离子体CVD设备的工作方法,包括如下步骤:
步骤一:拉动上箱体上的把手,打开上箱体,将籽晶放在下基台上,关闭上箱体,将上箱体通过密封条与下箱体上的凹槽配合密封,真空泵通过抽真空管将上箱体与下箱体形成的空间抽至真空,开启微波发生器,微波发生器通过微波发射喇叭对上箱体与下箱体形成的空间进行加热,开启外部循环冷却设备,进水管与出水管配合U形管对冷却水进行循环,进而对上箱体与下箱体形成的空间进行降温;
步骤二:甲烷、丙酮、二氧化碳混合气体的储存设备通过碳气管向上箱体与下箱体形成的空间通入混合气体,开启激光灯,激光灯对籽晶进行照射,开启第一电机,两个第一电机输出轴配合齿轮带动齿盘转动,齿盘通过下基台带动籽晶转动,籽晶进行生长;
步骤三:籽晶生长结束后得到金刚石片,开启第二电机,第二电机输出轴带动丝杆转动,丝杆配合丝杆连接块带动移动板在活动槽内滑动,伸缩气缸活塞杆通过连接板带动激光切割头下降,激光切割头对金刚石四周多晶进行切割,而后下基台带动金刚石转动,激光切割头对金刚石进行纵向分切。
本发明的有益效果:
(1)本发明的制备金刚石单晶的激光等离子体CVD设备及其工作方法,通过拉动上箱体上的把手,打开上箱体,将籽晶放在下基台上,关闭上箱体,将上箱体通过密封条与下箱体上的凹槽配合密封,真空泵通过抽真空管将上箱体与下箱体形成的空间抽至真空,开启微波发生器,微波发生器通过微波发射喇叭对上箱体与下箱体形成的空间进行加热,开启外部循环冷却设备,进水管与出水管配合U形管对冷却水进行循环,进而对上箱体与下箱体形成的空间进行降温,通过微波发生器与外部循环冷却设备的设置,方便对该CVD设备的温度的调节,实用性强;甲烷、丙酮、二氧化碳混合气体的储存设备通过碳气管向上箱体与下箱体形成的空间通入混合气体,开启激光灯,激光灯对籽晶进行照射,开启第一电机,两个第一电机输出轴配合齿轮带动齿盘转动,齿盘通过下基台带动籽晶转动,籽晶进行生长,通过该结构设置,下基台带动籽晶转动,使得激光对下基台上的籽晶照射更全面,对籽晶的处理效果更好;
(2)籽晶生长结束后得到金刚石片,开启第二电机,第二电机输出轴带动丝杆转动,丝杆配合丝杆连接块带动移动板在活动槽内滑动,伸缩气缸活塞杆通过连接板带动激光切割头下降,激光切割头对金刚石四周多晶进行切割,而后下基台带动金刚石转动,激光切割头对金刚石进行纵向分切,通过以上结构设置,使得该CVD设备可以对籽晶生产后的得到的金刚石直接进行分切,金刚石的处理效率高。
附图说明
下面结合附图对本发明作进一步的说明。
图1是本发明制备金刚石单晶的激光等离子体CVD设备的结构示意图;
图2是本发明上箱体的内部结构图;
图3是本发明下箱体的内部结构图;
图4是本发明下基座的内部结构图;
图5是本发明废气收集箱的内部结构图。
图中:1、下箱体;2、上箱体;3、微波发生器;4、激光灯;5、微波发射喇叭;6、下基座;7、下基台;8、凹槽;9、密封条;10、第一电机;11、定位轴;12、齿盘;13、顶座;131、活动槽;14、第二电机;15、移动板;16、伸缩气缸;17、连接板;18、激光切割头;19、进水管;20、出水管;21、U形管;22、废气收集箱;23、抽气泵;24、抽真空管;25、碳气管。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其它实施例,都属于本发明保护的范围。
请参阅图1-5所示,本发明为制备金刚石单晶的激光等离子体CVD设备,包括下箱体1、上箱体2,下箱体1与上箱体2之间通过铰链转动连接,上箱体2上安装有两个激光灯4,下箱体1一侧设置有微波发生器3,微波发生器3上安装有微波发射喇叭5,微波发射喇叭5贯穿下箱体1侧壁,下箱体1内安装有下基座6,下基座6上转动设置有下基台7;
上箱体2内壁顶部安装有顶座13,顶座13上开设有活动槽131,活动槽131上滑动安装有移动板15,移动板15上安装有伸缩气缸16,伸缩气缸16活塞杆端部安装有连接板17,连接板17上安装有激光切割头18,下箱体1底部安装有两个废气收集箱22,废气收集箱22内安装有抽气泵23,废气收集箱22连通下箱体1,下箱体1同侧外壁安装有抽真空管24、碳气管25,抽真空管24、碳气管25上均安装有开关阀。
具体的,两个激光灯4对称固定于上箱体2两侧,上箱体2上安装有把手。下箱体1顶部四处侧边均开设有凹槽8,上箱体2底部四处侧边均安装有密封条9,密封条9与凹槽8为配合构件。下基座6为中空式结构,下基座6内安装有两个第一电机10,下基座6内安装有定位轴11,定位轴11底部转动连接下基座6内壁底部,两个第一电机10分别设置于定位轴11两侧,第一电机10输出轴连接有齿轮,定位轴11顶部轴端套设有齿盘12,齿盘12设置于下基座6上方,齿盘12固定于下基台7底部,齿盘12啮合连接两个齿轮。活动槽131内转动设置有丝杆,顶座13上安装有第二电机14,第二电机14输出轴连接丝杆,丝杆外周面转动套设有丝杆连接块,丝杆连接块固定连接移动板15,移动板15上安装有两个滑块,活动槽131内安装有两个滑轨,两个滑块分别滑动连接两个滑轨。下箱体1同侧壁安装有进水管19、出水管20,进水管19、出水管20设置于同一平面,进水管19外接循环冷却设备的出水口,出水管20外接循环冷却设备的进水口,下箱体1内腔设置有U形管21,U形管21两端分别连通进水管19、出水管20。抽真空管24、碳气管25均连通下箱体1侧壁,抽真空管24外接真空泵,碳气管25外接甲烷、丙酮、二氧化碳混合气体的储存设备。
请参阅图1-5所示,本实施例的制备金刚石单晶的激光等离子体CVD设备的工作过程如下:
步骤一:拉动上箱体2上的把手,打开上箱体2,将籽晶放在下基台7上,关闭上箱体2,将上箱体2通过密封条9与下箱体1上的凹槽8配合密封,真空泵通过抽真空管24将上箱体2与下箱体1形成的空间抽至真空,开启微波发生器3,微波发生器3通过微波发射喇叭5对上箱体2与下箱体1形成的空间进行加热,开启外部循环冷却设备,进水管19与出水管20配合U形管21对冷却水进行循环,进而对上箱体2与下箱体1形成的空间进行降温;
步骤二:甲烷、丙酮、二氧化碳混合气体的储存设备通过碳气管25向上箱体2与下箱体1形成的空间通入混合气体,开启激光灯4,激光灯4对籽晶进行照射,开启第一电机10,两个第一电机10输出轴配合齿轮带动齿盘12转动,齿盘12通过下基台7带动籽晶转动,籽晶进行生长;
步骤三:籽晶生长结束后得到金刚石片,开启第二电机14,第二电机14输出轴带动丝杆转动,丝杆配合丝杆连接块带动移动板15在活动槽131内滑动,伸缩气缸16活塞杆通过连接板17带动激光切割头18下降,激光切割头18对金刚石四周多晶进行切割,而后下基台7带动金刚石转动,激光切割头18对金刚石进行纵向分切。
以上内容仅仅是对本发明结构所作的举例和说明,所属本技术领域的技术人员对所描述的具体实施例做各种各样的修改或补充或采用类似的方式替代,只要不偏离发明的结构或者超越本权利要求书所定义的范围,均应属于本发明的保护范围。
Claims (8)
1.制备金刚石单晶的激光等离子体CVD设备,其特征在于,包括下箱体(1)、上箱体(2),所述下箱体(1)与上箱体(2)之间通过铰链转动连接,所述上箱体(2)上安装有两个激光灯(4),所述下箱体(1)一侧设置有微波发生器(3),所述微波发生器(3)上安装有微波发射喇叭(5),所述微波发射喇叭(5)贯穿下箱体(1)侧壁,所述下箱体(1)内安装有下基座(6),所述下基座(6)上转动设置有下基台(7);
所述上箱体(2)内壁顶部安装有顶座(13),所述顶座(13)上开设有活动槽(131),所述活动槽(131)上滑动安装有移动板(15),移动板(15)上安装有伸缩气缸(16),所述伸缩气缸(16)活塞杆端部安装有连接板(17),所述连接板(17)上安装有激光切割头(18),所述下箱体(1)底部安装有两个废气收集箱(22),所述废气收集箱(22)内安装有抽气泵(23),所述废气收集箱(22)连通下箱体(1),所述下箱体(1)同侧外壁安装有抽真空管(24)、碳气管(25),所述抽真空管(24)、碳气管(25)上均安装有开关阀。
2.根据权利要求1所述的制备金刚石单晶的激光等离子体CVD设备,其特征在于,两个激光灯(4)对称固定于上箱体(2)两侧,所述上箱体(2)上安装有把手。
3.根据权利要求1所述的制备金刚石单晶的激光等离子体CVD设备,其特征在于,所述下箱体(1)顶部四处侧边均开设有凹槽(8),所述上箱体(2)底部四处侧边均安装有密封条(9),所述密封条(9)与凹槽(8)为配合构件。
4.根据权利要求1所述的制备金刚石单晶的激光等离子体CVD设备,其特征在于,所述下基座(6)为中空式结构,所述下基座(6)内安装有两个第一电机(10),所述下基座(6)内安装有定位轴(11),所述定位轴(11)底部转动连接下基座(6)内壁底部,两个第一电机(10)分别设置于定位轴(11)两侧,所述第一电机(10)输出轴连接有齿轮,所述定位轴(11)顶部轴端套设有齿盘(12),所述齿盘(12)设置于下基座(6)上方,所述齿盘(12)固定于下基台(7)底部,所述齿盘(12)啮合连接两个齿轮。
5.根据权利要求1所述的制备金刚石单晶的激光等离子体CVD设备,其特征在于,所述活动槽(131)内转动设置有丝杆,所述顶座(13)上安装有第二电机(14),所述第二电机(14)输出轴连接丝杆,丝杆外周面转动套设有丝杆连接块,丝杆连接块固定连接移动板(15),所述移动板(15)上安装有两个滑块,所述活动槽(131)内安装有两个滑轨,两个滑块分别滑动连接两个滑轨。
6.根据权利要求1所述的制备金刚石单晶的激光等离子体CVD设备,其特征在于,所述下箱体(1)同侧壁安装有进水管(19)、出水管(20),所述进水管(19)、出水管(20)设置于同一平面,所述进水管(19)外接循环冷却设备的出水口,所述出水管(20)外接循环冷却设备的进水口,所述下箱体(1)内腔设置有U形管(21),所述U形管(21)两端分别连通进水管(19)、出水管(20)。
7.根据权利要求1所述的制备金刚石单晶的激光等离子体CVD设备,其特征在于,所述抽真空管(24)、碳气管(25)均连通下箱体(1)侧壁,所述抽真空管(24)外接真空泵,所述碳气管(25)外接甲烷、丙酮、二氧化碳混合气体的储存设备。
8.制备金刚石单晶的激光等离子体CVD设备的工作方法,其特征在于,包括如下步骤:
步骤一:拉动上箱体(2)上的把手,打开上箱体(2),将籽晶放在下基台(7)上,关闭上箱体(2),将上箱体(2)通过密封条(9)与下箱体(1)上的凹槽(8)配合密封,真空泵通过抽真空管(24)将上箱体(2)与下箱体(1)形成的空间抽至真空,开启微波发生器(3),微波发生器(3)通过微波发射喇叭(5)对上箱体(2)与下箱体(1)形成的空间进行加热,开启外部循环冷却设备,进水管(19)与出水管(20)配合U形管(21)对冷却水进行循环,进而对上箱体(2)与下箱体(1)形成的空间进行降温;
步骤二:甲烷、丙酮、二氧化碳混合气体的储存设备通过碳气管(25)向上箱体(2)与下箱体(1)形成的空间通入混合气体,开启激光灯(4),激光灯(4)对籽晶进行照射,开启第一电机(10),两个第一电机(10)输出轴配合齿轮带动齿盘(12)转动,齿盘(12)通过下基台(7)带动籽晶转动,籽晶进行生长;
步骤三:籽晶生长结束后得到金刚石片,开启第二电机(14),第二电机(14)输出轴带动丝杆转动,丝杆配合丝杆连接块带动移动板(15)在活动槽(131)内滑动,伸缩气缸(16)活塞杆通过连接板(17)带动激光切割头(18)下降,激光切割头(18)对金刚石四周多晶进行切割,而后下基台(7)带动金刚石转动,激光切割头(18)对金刚石进行纵向分切。
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