CN111697115A - 一种基于非晶衬底的氮化物薄膜结构及其制备方法 - Google Patents
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Abstract
一种非晶衬底的氮化物薄膜结构及其制备方法,该氮化物薄膜结构包括:一非晶衬底;一石墨烯缓冲层;一纳米结构支撑层;一氮化物薄膜。该非晶衬底的氮化物薄膜结构的制备方法包括:提供一非晶衬底;将石墨烯转移到非晶衬底上;利用化学气相沉积技术在石墨烯上进行氮化物纳米结构生长,通过改变压强、温度、反应物浓度等参数获得分布均匀、取向一致的纳米结构材料;在氮化物纳米结构的基础上进行薄膜生长,通过改变压强、温度、反应物浓度等参数使得反应物横向合并生长,形成连续的氮化物薄膜;进行器件结构设计及工艺制备。本发明提出的非晶衬底的氮化物结构及其制备方法,能够在非晶衬底上制备出氮化物光电子器件,降低生产成本,拓展其应用范围。
Description
技术领域
本申请涉及照明、激光器、功率器件、微波器件等技术领域,特别涉及一种基于非晶衬底的氮化物薄膜结构及其制备方法。
背景技术
目前应用于氮化物材料生长的主要有蓝宝石、SiC、Si等衬底。虽然采用低温成核层可以降低位错密度,但是外延得到的晶体质量还有待加强。并且,这些衬底的尺寸受到限制,较大尺寸价格十分昂贵。因此,为了降低生产成本,提高性价比,利用廉价、大尺寸衬底具有重要意义。非晶玻璃价格低廉,尺寸不受限制,是氮化物薄膜外延的潜在衬底材料。而且实现非晶玻璃上氮化物的外延,也会推动晶体生长技术的进步。但是作为非晶衬底,在其上外延单晶材料有很大的难度。因此,寻找到新型的缓冲层用于氮化物外延是一个亟待解决的问题。
石墨烯是一种二维层状材料,层与层之间通过范德华力连接,很容易分开;且面内分子之间碳原子通过sp2杂化组成六边形结构,性能稳定,与纤锌矿氮化物的(0001)面相似;表面悬挂键的缺失也能避免衬底晶格失配带来的不利影响。但是由于成核点的缺失,在石墨烯表面很难直接生长出连续的薄膜。本发明通过控制生长条件,先在石墨烯缓冲层表面生长一层取向一致的氮化物纳米结构材料,然后在纳米结构的基础上进行横向合并,形成连续的氮化物薄膜。本发明所采用的方法均在金属有机物化学气相沉积设备中进行,与原有生长工艺兼容,成本降低,有利于实现大尺寸光电子器件制备。
发明内容
(一)要解决的技术问题
本发明的目的在于,提供一种基于非晶衬底的氮化物薄膜结构及其制备方法,以实现在非晶衬底上制备出氮化物光电子器件,降低生产成本,拓展其应用范围。
(二)技术方案
本发明提供了一种基于非晶衬底的氮化物薄膜结构,其包括:
一非晶衬底;
一石墨烯缓冲层,形成在所述非晶衬底上;
一纳米结构支撑层,形成在所述石墨烯缓冲层上;以及
一氮化物薄膜,形成在所述纳米结构支撑层上。
其中,所述非晶衬底为石英衬底、玻璃衬底或SiO2衬底,厚度为0.5mm-1.0mm;所述石墨烯缓冲层是一层或多层,厚度为0.4nm-3.0nm;所述纳米结构支撑层是纳米线、纳米柱、纳米锥或纳米微盘结构,其厚度为100nm-500nm;所述氮化物薄膜厚度为1μm-5μm。
本发明还提供了一种制备所述基于非晶衬底的氮化物薄膜结构的方法,具体包括:
提供一非晶衬底;
将一石墨烯缓冲层转移到所述非晶衬底上;
在所述石墨烯缓冲层上形成一氮化物纳米结构支撑层;以及
在所述氮化物纳米结构支撑层上形成一氮化物薄膜。
其中,所述将石墨烯缓冲层转移到所述非晶衬底上的步骤中,首先把生长在金属上的石墨烯固定于基板上,腐蚀掉金属后使用所述非晶衬底捞取漂浮的所述石墨烯,自然晾干后完成所述石墨烯缓冲层到所述非晶衬底的转移;
其中,所述在石墨烯缓冲层上进行氮化物纳米结构支撑层生长步骤中,采用金属有机物化学气相沉积技术在石墨烯缓冲层上生长所述氮化物纳米结构支撑层;
其中,所述在纳米结构支撑层上形成氮化物薄膜步骤中,采用金属有机物化学气相沉积技术在纳米结构支撑层上生长所述氮化物薄膜;
其中,该方法在形成氮化物薄膜之后还包括:在所述氮化物薄膜上进行器件结构设计及工艺制备。
(三)有益效果
从上述技术方案可以看出,本发明提出的一种基于非晶衬底的氮化物薄膜结构及其制备方法,具有以下有益效果:
(1)本发明提供的基于非晶衬底的氮化物薄膜结构及其制备方法,采用价格更低、尺寸更大的非晶材料作为衬底进行氮化物外延,降低生产成本,拓宽应用范围,为氮化物光电子器件制备开辟了新的道路;
(2)本发明提供的基于非晶衬底的氮化物薄膜结构及其制备方法,采用工业上可以量化生产的金属有机物化学气相沉积设备进行氮化物纳米结构及薄膜生长,克服了在非晶衬底上进行单晶材料外延的技术难题,且只采用一台设备,降低了技术难度与生产成本。
附图说明
图1是依照本发明实施例的基于非晶衬底的氮化物薄膜结构的示意图。
图2是依照本发明实施例的制备氮化物薄膜结构的方法流程图。
【符号说明】
1:非晶衬底
2:石墨烯缓冲层
3:氮化物纳米结构支撑层
4:氮化物薄膜
具体实施方式
为使本发明的目的、技术方案和优点更加清楚明白,以下结合具体实施例,并参照附图,对本发明进一步详细说明。
本发明提供了一种基于非晶衬底的氮化物薄膜结构,其包括:
一非晶衬底;
一石墨烯缓冲层,形成在所述非晶衬底上;
一纳米结构支撑层,形成在所述石墨烯缓冲层上;以及
一氮化物薄膜,形成在所述纳米结构支撑层上。
其中,所述非晶衬底为石英衬底、玻璃衬底或SiO2衬底,厚度为0.5mm-1.0mm;所述石墨烯缓冲层是一层或多层,厚度为0.4nm-3.0nm;所述纳米结构支撑层是纳米线、纳米柱、纳米锥或纳米微盘结构,其厚度为100nm-500nm;所述氮化物薄膜厚度为1μm-5μm。
本发明还提供了一种制备所述基于非晶衬底的氮化物薄膜结构的方法,具体包括:
提供一非晶衬底;
将一石墨烯缓冲层转移到所述非晶衬底上;
在所述石墨烯缓冲层上形成一氮化物纳米结构支撑层;以及
在所述氮化物纳米结构支撑层上形成一氮化物薄膜。
其中,所述将石墨烯缓冲层转移到所述非晶衬底上的步骤中,首先把生长在金属上的石墨烯固定于基板上,腐蚀掉金属后使用所述非晶衬底捞取漂浮的所述石墨烯,自然晾干后完成所述石墨烯缓冲层到所述非晶衬底的转移;
其中,所述在石墨烯缓冲层上进行氮化物纳米结构支撑层生长步骤中,采用金属有机物化学气相沉积技术在石墨烯缓冲层上生长所述氮化物纳米结构支撑层;
其中,所述在纳米结构支撑层上形成氮化物薄膜步骤中,采用金属有机物化学气相沉积技术在纳米结构支撑层上生长所述氮化物薄膜;
其中,该方法在形成氮化物薄膜之后还包括:在所述氮化物薄膜上进行器件结构设计及工艺制备。
由于本发明提供的一种基于非晶衬底的氮化物薄膜结构及其制备方法中采用价格更低、尺寸更大的非晶材料作为衬底进行氮化物外延,降低了生产成本,拓宽应用范围,为氮化物光电子器件制备开辟了新的道路;此外,采用工业上可以量化生产的金属有机物化学气相沉积设备进行氮化物纳米结构及薄膜生长,克服了在非晶衬底上进行单晶材料外延的技术难题,且只采用一台设备,降低了技术难度与生产成本。
为进一步说明本发明的内容,特举实施例,结合附图,对本发明进行详细的说明。
图1是依照本发明实施例的基于非晶衬底的氮化物薄膜结构的示意图,该氮化物薄膜结构包括非晶衬底1、石墨烯缓冲层2、纳米结构支撑层3和氮化物薄膜4。结合图1所示,从下至上各层的功能具体如下:
非晶衬底1:包括但不限于石英衬底、玻璃衬底、SiO2衬底等,其厚度为0.5mm-1.0mm。
石墨烯缓冲层2:可以是单层石墨烯,也可以是多层石墨烯,厚度为0.4nm-3.0nm,在金属衬底上生长后转移到非晶衬底表面。石墨烯层与非晶衬底通过范德瓦尔斯相互作用连接,两者间没有化学键存在。
氮化物纳米结构支撑层3:氮化物纳米结构材料,包括但不限于纳米线、纳米柱、纳米锥、纳米微盘等,其厚度为100nm-500nm,用于支撑后续薄膜材料的生长。
氮化物薄膜4:氮化物薄膜材料是氮化物光电子器件的主体部分,厚度为1μm-5μm。
基于非晶衬底的氮化物薄膜结构,本实施例还提供了一种制备该结构的方法,图2是依照本发明实施例的制备氮化物薄膜结构的方法流程图,该方法包括:
步骤S201:提供一非晶衬底;该非晶衬底可以是石英衬底、玻璃衬底、SiO2衬底等,其厚度为0.5mm-1.0mm。
步骤S202:将Cu、Ni等金属上生长的石墨烯固定于基板上,旋涂聚甲基丙烯酸甲酯(Poly Methyl Methacrylate,PMMA)等转移层并在100℃-150℃的环境下固化10分钟-30分钟,在FeCl3等溶液中将Cu、Ni等金属腐蚀掉,使用非晶衬底捞取漂浮的石墨烯,自然晾干后去掉PMMA等转移层,实现将石墨烯转移到非晶衬底上。
步骤S203:采用金属有机物化学气相沉积设备进行氮化物纳米结构生长,三甲基镓、三甲基铝、氨气等作为反应源,生长出的纳米结构取向一致,高度大约为300nm。
步骤S204:采用金属有机物化学气相沉积设备进行氮化物薄膜生长,以三甲基镓、三甲基铝、氨气等作为反应源,通过改变温度、压强、反应物浓度等促进反应物横向合并生长,形成连续薄膜。以纳米线基底为例,生长纳米线结构时需要采用极小的氨气流量、较低的压强来促进其纵向生长(三甲基镓流量为35sccm,氨气流量15sccm,压强133mbar),在横向合并阶段,需要采用更大的反应物浓度来实现薄膜生长(三甲基镓流量为310sccm,氨气流量30000sccm,压强300mbar),两者之间可以加入适当的流量过渡层进一步提高晶体质量。
步骤S205:在氮化物薄膜的基础上,根据实际器件需求,进行器件结构设计及工艺制备。以氮化物蓝光LED结构为例,在生长出氮化物薄膜之后(此时生长的是非掺杂GaN),引入硅烷继续生长n型GaN薄膜,随后生长InGaN/GaN量子阱结构用于蓝光激发,引入二茂镁生长p型GaN用于提供空穴,继续生长欧姆接触层等完成器件结构。然后通过光刻、刻蚀等工艺暴露出n型区域及p型区域,通过金属蒸镀等工艺在两区域分别制备金属电极,通过沉积SiO2工艺对各部分进行钝化处理,通过磨抛、划裂等工艺将器件结构制备成小芯片,通过封装等工艺制备功能型芯片进行商用。
以上所述的具体实施例,对本发明的目的、技术方案和有益效果进行了进一步详细说明,所应理解的是,以上所述仅为本发明的具体实施例而已,并不用于限制本发明,凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (10)
1.一种基于非晶衬底的氮化物薄膜结构,包括:
一非晶衬底;
一石墨烯缓冲层,形成在所述非晶衬底上;
一纳米结构支撑层,形成在所述石墨烯缓冲层上;以及
一氮化物薄膜,形成在所述纳米结构支撑层上。
2.根据权利要求1所述的基于非晶衬底的氮化物薄膜结构,其特征在于,所述非晶衬底为石英衬底、玻璃衬底或SiO2衬底,厚度为0.5mm-1.0mm。
3.根据权利要求1所述的基于非晶衬底的氮化物薄膜结构,其特征在于,所述石墨烯缓冲层是一层或多层,厚度为0.4nm-3.0nm。
4.根据权利要求1所述的基于非晶衬底的氮化物薄膜结构,其特征在于,所述纳米结构支撑层是纳米线、纳米柱、纳米锥或纳米微盘结构,其厚度为100nm-500nm。
5.根据权利要求1所述的基于非晶衬底的氮化物薄膜结构,其特征在于,所述氮化物薄膜厚度为1μm-5μm。
6.一种制备权利要求1至5中任一项所述的基于非晶衬底的氮化物薄膜结构的方法,包括:
提供一非晶衬底;
将一石墨烯缓冲层转移到所述非晶衬底上;
在所述石墨烯缓冲层上形成一氮化物纳米结构支撑层;以及
在所述氮化物纳米结构支撑层上形成一氮化物薄膜。
7.根据权利要求6所述的制备基于非晶衬底的氮化物薄膜结构的方法,其特征在于,所述将石墨烯缓冲层转移到所述非晶衬底上的步骤中,首先把生长在金属上的石墨烯固定于基板上,腐蚀掉金属后使用所述非晶衬底捞取漂浮的所述石墨烯,自然晾干后完成所述石墨烯缓冲层到所述非晶衬底的转移。
8.根据权利要求6所述的制备基于非晶衬底的氮化物薄膜结构的方法,其特征在于,所述在石墨烯缓冲层上进行氮化物纳米结构支撑层生长步骤中,采用金属有机物化学气相沉积技术在石墨烯缓冲层上生长所述氮化物纳米结构支撑层。
9.根据权利要求6所述的制备基于非晶衬底的氮化物薄膜结构的方法,其特征在于,所述在纳米结构支撑层上形成氮化物薄膜步骤中,采用金属有机物化学气相沉积技术在纳米结构支撑层上生长所述氮化物薄膜。
10.根据权利要求6所述的制备基于非晶衬底的氮化物薄膜结构的方法,其特征在于,该方法在形成氮化物薄膜之后还包括:
在所述氮化物薄膜上进行器件结构设计及工艺制备。
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