CN111697102B - Method for adjusting main and auxiliary grid offset of step-by-step printing solar cell - Google Patents
Method for adjusting main and auxiliary grid offset of step-by-step printing solar cell Download PDFInfo
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- CN111697102B CN111697102B CN202010386454.2A CN202010386454A CN111697102B CN 111697102 B CN111697102 B CN 111697102B CN 202010386454 A CN202010386454 A CN 202010386454A CN 111697102 B CN111697102 B CN 111697102B
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- 238000000034 method Methods 0.000 title claims abstract description 60
- 238000007639 printing Methods 0.000 title claims abstract description 43
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 230000001105 regulatory effect Effects 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 239000000969 carrier Substances 0.000 abstract description 3
- 238000007650 screen-printing Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000005336 cracking Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
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- 150000003376 silicon Chemical class 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M1/00—Inking and printing with a printer's forme
- B41M1/12—Stencil printing; Silk-screen printing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a method for adjusting the offset of main and auxiliary grids of a step-by-step printing solar cell, which comprises the following steps: separately and experimentally printing the auxiliary grid and the main grid on a silicon wafer provided with a laser groove; measuring the distance x between adjacent laser slots; measuring the distance between adjacent auxiliary grids and the distance between adjacent lapping units on the same main grid; calculating an auxiliary grid offset distance and a main grid offset distance; adjusting the auxiliary grid according to the auxiliary grid offset distance; and adjusting the main grid plate according to the main grid offset distance. According to the adjusting method, through adjusting the four parameters of the main grid plate, the auxiliary grid plate tension value and the grid plate PT value, the offset between the main grid and the auxiliary grid is effectively eliminated, and the collection and transportation of carriers by the electrode grid lines are improved, so that the conversion efficiency of the solar cell is improved; and also improves its reliability.
Description
Technical Field
The invention relates to the field of solar cell electrode printing, in particular to a method for adjusting main and auxiliary grid offset of a step-by-step printing solar cell.
Background
Screen printing is a commonly used solar cell printing technology at present, and the basic operation flow is as follows: and placing the silicon wafer provided with the laser groove on a workbench, pouring slurry on a screen plate above the workbench, applying a certain pressure on the screen plate by using a scraper, and simultaneously moving the scraper from one end of the screen plate to the other end of the screen plate, wherein the slurry can be extruded onto the silicon wafer from meshes of a graph part, so that screen printing is completed. In the current printing process, the printing effect is mostly adjusted by parameters such as printing pressure, printing interval, printing speed, printing height and the like.
However, with the development of solar cell technology, a technology of printing part/all of electrode grid lines into a laser groove has gradually appeared. When such electrode grid line printing is performed by screen printing, alignment is required, which puts high demands on the screen printing process. The existing screen printing process is often larger in offset when laser groove printing is performed, so that the requirements of the appearance of the battery piece cannot be met, carrier transmission loss is easily caused, and the reliability of the battery is reduced.
In the prior art, the problem is solved by widening the width of the laser groove, for example, the width of the existing laser groove is more than 120-300 mu m so as to reserve a larger printing space, but the number of electrode grid lines is reduced, the carrier collection amount is small, and the battery efficiency is reduced; meanwhile, the risk of hidden cracking of the silicon wafer is increased.
On the other hand, the step-by-step printing is used as a new printing technology, wherein the main gate electrode and the auxiliary gate electrode are printed on the surface of the solar cell in two times, and the step-by-step printing technology can obviously improve the photoelectric conversion efficiency of the cell and has great advantages.
However, when step-by-step printing is employed and the sub-gate electrode is printed into the laser groove, the offset of the main and sub-gates is inconsistent due to inconsistent screen parameters used to print the two. Therefore, the lap joint of the main grid and the auxiliary grid is easy to deviate, carrier transmission loss is easy to be caused, and the reliability of the battery is reduced.
Disclosure of Invention
The invention aims to solve the technical problem of providing a method for adjusting the grid line offset of a solar cell, which can reduce the offset between a main grid and an auxiliary grid and improve the conversion efficiency and the reliability of the solar cell.
In order to solve the problems, the invention discloses a method for adjusting the primary and secondary grid offset of a step-by-step printing solar cell, which comprises the following steps:
(1) Separately and experimentally printing the auxiliary grid and the main grid on a silicon wafer provided with a laser groove; the auxiliary grid is arranged in the laser groove; the main grid comprises a main grid main body and a plurality of lap joint units; the lap joint unit is arranged in the laser groove and is perpendicular to the main grid main body; the auxiliary grid is arranged in the laser groove;
(2) Measuring the distance x between adjacent laser slots;
(3) Measuring in adjacent sub-gridsDistance between hearts y 1 And distance y between the end points 2 The method comprises the steps of carrying out a first treatment on the surface of the Measuring the distance z between adjacent overlapping units on the same main grid;
(4) Calculating an auxiliary grid offset distance and a main grid offset distance;
the sub-gate offset pitch is calculated according to the following formula:
δ 1 ＝x-y 1
δ 2 ＝x-y 2
wherein delta 1 For the first sub-gate offset spacing, delta, between the laser groove and the sub-gate 2 Is the second sub-grid offset distance between the laser groove and the sub-grid, x is the distance between adjacent laser grooves, y 1 Y is the distance between the centers of adjacent sub-grids 2 Is the distance between adjacent sub-gate endpoints;
the main gate offset distance is calculated according to the following formula:
λ＝x-z
wherein lambda is the offset distance of the main grid between the laser groove and the lapping unit, x is the distance between adjacent laser grooves, and z is the distance between adjacent lapping units on the same main grid;
(5) Adjusting the auxiliary grid according to the auxiliary grid offset distance; adjusting the main grid plate according to the main grid offset distance;
wherein when delta 1 =0 and δ 2 When the value is=0, the screen parameters are not adjusted;
when delta 1 =0 and δ 2 When the screen tension value is not equal to 0, adjusting the screen tension value;
when delta 1 Not equal to 0 and delta 2 When the value is not equal to 0, the PT value and/or the tension value of the screen printing plate are/is adjusted;
when λ=0, the main reticle parameters are not adjusted;
when lambda is not equal to 0, the parameters of the main grid plate are adjusted.
As an improvement of the above technical solution, the step (3) includes:
(3.1) measuring the distance y between centers of adjacent sub-gates 1 Distance y between end points 2 And distance y at 1/4 length of the sub-gate 3
(3.2) measuring the distance z between adjacent lapping units on the main gate nearest to the center region of the silicon wafer 1 The method comprises the steps of carrying out a first treatment on the surface of the Measuring the distance z between adjacent bridging units on the main gate nearest to the edge region of the wafer 2 ；
The step (4) comprises:
(4.1) calculating a sub-gate offset pitch;
the sub-gate offset pitch is calculated by the following formula set:
δ 1 ＝x-y 1
δ 2 ＝x-y 2
δ 3 ＝x-y 3
wherein delta 1 For the first sub-gate offset spacing, delta, between the laser groove and the sub-gate 2 For the second sub-gate offset spacing, delta, between the laser groove and the sub-gate 3 A third sub-grid offset distance between the laser groove and the sub-grid, x is the distance between adjacent laser grooves, y 1 Y is the distance between the centers of adjacent sub-grids 2 Is the distance between adjacent sub-gate endpoints; y is 3 A distance of 1/4 of the length of the adjacent sub-grid;
(4.2) calculating a main gate offset pitch;
the main gate offset distance is calculated by the following formula:
λ 1 ＝x-z 1
λ 2 ＝x-z 2
wherein lambda is 1 For a first primary grid offset spacing, lambda, between the laser groove and the landing cell 2 The second main grid offset distance between the laser groove and the lap joint unit is set; x is the distance between adjacent laser grooves, z 1 The distance between adjacent lapping units on the main grid closest to the central area of the silicon wafer; z 2 Is the distance between adjacent bridging units on the main gate nearest to the edge region of the wafer.
As an improvement of the above technical solution, in step (5):
when delta 1 ＝0，δ 2 =0 and δ 3 When=0, the parameters of the auxiliary grid plate are not adjustedA section;
when delta 1 ＝0，δ 2 Not equal to 0 and delta 3 When the tension value is not equal to 0, only the tension value of the auxiliary grid plate is adjusted;
when delta 1 ≠0，δ 2 Not equal to 0 and delta 3 Not equal to 0, and delta 1 ＝δ 2 ＝δ 3 When the PT value of the secondary grid plate is regulated;
when delta 1 ≠0，δ 2 ≠0，δ 3 ≠0，δ 1 ≠δ 2 And delta 2 ≠δ 3 When the method is used, the PT value of the auxiliary grid plate is adjusted, and then the tension of the auxiliary grid plate is adjusted.
As an improvement of the above technical solution, in step (5):
when lambda is 1 =0 and λ 2 When=0, the main grid parameters are not adjusted;
when lambda is 1 ≠0，λ 2 Not equal to 0, and lambda 1 ＝λ 2 When the PT value of the main grid plate is regulated;
when lambda is 1 ≠0，λ 2 Not equal to 0, and lambda 1 ≠λ 2 When the method is used, the PT value of the main grid plate is adjusted, and then the tension of the main grid plate is adjusted.
As an improvement of the above technical solution, in step (5):
when delta 1 ≠0，δ 2 ≠0，δ 3 Not equal to 0, and delta 1 ＝δ 2 ＝δ 3 When the method is used, only the PT value of the screen is regulated; wherein, the PT value of the auxiliary grid plate is adjusted according to the following formula:
PT FA ＝PT FB +(N-1)δ 1
wherein PT FA To adjust the PT value of the rear auxiliary grid plate, PT FB In order to adjust PT value of front auxiliary grid plate, N is total number of laser grooves, delta 1 A first sub-grid offset distance between the laser groove and the sub-grid;
when lambda is 1 ≠0，λ 2 Not equal to 0, and lambda 1 ＝λ 2 When the PT value of the main grid plate is regulated; wherein, the main grid plate PT value is adjusted according to the following formula:
PT MA ＝PT MB +(N-1)λ 1
wherein PT MA To adjust the PT value of the rear main grid plate, PT MB In order to adjust PT value of front main grid plate, N is total number of laser grooves, lambda 1 Is the first main grid offset spacing between the laser groove and the main grid overlap unit.
As an improvement of the above technical solution, in step (5):
when delta 1 ＝0，δ 2 ≠0，δ 3 Not equal to 0 and delta 2 ≠δ 3 When the tension value of the auxiliary grid plate is adjusted;
wherein, the tension value of the auxiliary grid plate is adjusted according to the following formula:
wherein F is FA To adjust the tension value of the rear auxiliary grid plate, F FB To adjust the tension value delta of the front auxiliary grid plate 2 For the second sub-gate offset spacing, delta, between the laser groove and the sub-gate 3 And the third sub-grid offset distance between the laser groove and the sub-grid.
As an improvement of the technical scheme, in the step (5), when delta 1 ＝0，δ 2 ≠0，δ 3 Not equal to 0 and delta 2 ＝δ 3 When the auxiliary grid plate tension value is adjusted;
wherein, the tension value of the auxiliary grid plate is adjusted according to the following formula:
wherein F is FA To adjust the tension value of the rear auxiliary grid plate, F FB To adjust the tension value delta of the front auxiliary grid plate 2 Is the second sub-gate offset spacing between the laser groove and the sub-gate.
As an improvement of the above technical solution, in step (5):
when delta 1 ≠0，δ 2 ≠0，δ 3 ≠0，δ 1 ≠δ 2 ，δ 1 ≠δ 3 And delta 2 ＝δ 3 When the method is used, the PT value of the auxiliary grid plate is adjusted, and then the tension value of the grid plate is adjusted;
wherein, the PT value of the auxiliary grid plate is adjusted according to the following formula:
PT FA ＝PT FB +(N-1)δ 1
wherein PT FA To adjust the PT value of the rear auxiliary grid plate, PT FB In order to adjust PT value of front auxiliary grid plate, N is total number of laser grooves, delta 1 A first sub-grid offset distance between the laser groove and the sub-grid;
wherein, the tension value of the auxiliary grid plate is adjusted according to the following formula:
wherein F is FA To adjust the tension value of the rear auxiliary grid plate, F FB To adjust the tension value delta of the front auxiliary grid plate 2 Is the second sub-gate offset spacing between the laser groove and the sub-gate.
As an improvement of the above technical solution, in step (5):
when delta 1 ≠0，δ 2 Not equal to 0 and delta 3 ≠0，δ 1 ≠δ 2 ，δ 1 ≠δ 3 And delta 2 ≠δ 3 When the method is used, the PT value of the auxiliary grid plate is adjusted, and then the tension value of the auxiliary grid plate is adjusted;
wherein, the PT value of the auxiliary grid plate is adjusted according to the following formula:
PT FA ＝PT FB +(N-1)δ 1
wherein PT FA To adjust the PT value of the rear auxiliary grid plate, PT FB In order to adjust PT value of front auxiliary grid plate, N is total number of laser grooves, delta 1 A first sub-grid offset distance between the laser groove and the sub-grid;
wherein, the tension value of the auxiliary grid plate is adjusted according to the following formula:
wherein F is FA To adjust the tension value of the rear auxiliary grid plate, F FB To adjust the tension value delta of the front auxiliary grid plate 2 For the second sub-gate offset spacing, delta, between the laser groove and the sub-gate 3 And the third sub-grid offset distance between the laser groove and the sub-grid.
As an improvement of the above technical solution, in step (5):
when lambda is 1 ≠0，λ 2 Not equal to 0, and lambda 1 ≠λ 2 When the method is used, the PT value of the main grid plate is adjusted, and then the tension of the main grid plate is adjusted;
wherein, the main grid plate PT value is adjusted according to the following formula:
PT MA ＝PT MB +(N-1)λ 1
wherein PT MA To adjust the PT value of the rear main grid plate, PT MB In order to adjust PT value of front main grid plate, N is total number of laser grooves, lambda 1 A first main grid offset distance between the laser groove and the main grid overlap unit;
wherein, the main grid plate tension value is adjusted according to the following formula:
wherein F is MA To adjust the tension value of the rear main screen plate, F MB To adjust the tension value of the front main screen plate lambda 1 For a first main grid offset spacing, lambda, between the laser groove and the main grid overlap unit 2 Is the second main grid offset distance between the laser groove and the main grid overlap joint unit.
The implementation of the invention has the following beneficial effects:
1. according to the adjusting method, the carrier collecting capacity of the auxiliary grid is improved through the offset of the lap joint part of the main grid, the carrier transmission capacity between the auxiliary grid and the main grid is enhanced, and therefore the efficiency of the solar cell is improved; the reliability of the solar cell is also improved.
2. The adjusting method of the invention can also effectively reduce the offset between the auxiliary grid and the laser groove, improve the appearance performance of the solar cell, improve the collecting capacity of the cell to carriers and improve the conversion efficiency of the solar cell.
3. The adjusting method of the invention comprises the following steps: and (3) performing test printing, measuring the spacing, determining which screen printing parameters are adjusted according to the spacing, and quantitatively adjusting the parameters according to the spacing. The adjustment method is simple and clear, has strong industrial operability and is easy to popularize.
4. The adjusting method reduces the offset between the laser groove and the auxiliary grid; the width of the traditional laser groove is reduced, and the risk of hidden cracking of the silicon wafer is reduced.
Drawings
FIG. 1 is a flow chart of a method for adjusting the primary and secondary grid offset of a step-by-step printed solar cell of the present invention;
FIG. 2 is a schematic diagram of the surface structure of a silicon wafer after step-by-step printing;
fig. 3 is a partial enlarged view of the point a in fig. 2.
Detailed Description
The present invention will be described in further detail below in order to make the objects, technical solutions and advantages of the present invention more apparent.
When the printing is performed step by step, the connection part of the main grid line and the auxiliary grid line is easy to deviate, poor connection is caused, the collection capacity and the transmission capacity of the solar cell electrode grid line to carriers are weakened, and the conversion efficiency and the reliability are reduced. For this purpose, the invention provides a method for adjusting the primary and secondary grid offset of a step-by-step printing solar cell, referring to fig. 1, comprising the following steps:
s1: separately printing the main grid and the auxiliary grid on a silicon wafer;
specifically, a main grid plate is adopted to print the main grid on a silicon wafer; and printing the auxiliary grid on the silicon wafer by adopting an auxiliary grid plate. When the main grid is adjusted, the main grid is printed on the silicon wafer only; when the secondary grid adjustment is carried out, the secondary grid is printed on the surface of the silicon wafer only. After the adjustment is completed, both are printed step by step to evaluate the offset.
Specifically, referring to fig. 2, a plurality of mutually parallel laser grooves 1, a main grid 2 and an auxiliary grid 3 are arranged on the surface of a silicon wafer; wherein, referring to fig. 3, the sub-grating 3 is printed in the laser groove 1; the main grid 2 includes a main grid body 21 and a sister unit 22, and the lapping unit 22 is disposed in the laser groove 1 and is perpendicular to the main grid body 21. The invention can effectively promote the electric connection between the main grid 2 and the auxiliary grid 3 by arranging the lap joint unit 22. Meanwhile, in the invention, the adjustment of the parameters of the main grid plate can be carried out according to the deviation condition between the lapping unit 22 and the laser groove 1, so as to achieve the purpose of reducing the lapping deviation of the main grid 2 and the auxiliary grid 3.
Specifically, the width of the laser groove is 80 to 250 μm, preferably 80 to 150 μm, and may be, for example, 80, 95, 100, 110, 115, 125, 130, 140 μm, but not limited thereto.
S2: measuring the distance x between adjacent laser slots;
specifically, a three-dimensional microscope is adopted to measure the distance x between adjacent laser grooves on the surface of the silicon wafer. Here, the distance between adjacent laser grooves refers to the distance between the center lines of the laser grooves.
S3: measuring the distance between adjacent auxiliary grids and the distance between adjacent lapping units on the same main grid;
specifically, in the present invention, the distance between adjacent sub-gates is characterized by the following three ways:
distance y between adjacent sub-grid centers (center in sub-grid length direction or parallel direction to laser groove) 1 Distance y between co-directional end points of adjacent sub-grids 2 And distance y at 1/4 length of adjacent subgrade 3 . Through the distance between the three points, the offset condition of the auxiliary grid relative to the laser groove can be reasonably evaluated, and a good data basis is provided for later adjustment. Here, the distance between the gate lines refers to the distance between the center lines (in the width direction or in the direction perpendicular to the laser grooves) of the gate lines.
Specifically, in the present invention, the distance between adjacent main gates can be characterized by the following two ways: distance z between adjacent landing units on the main gate 23 (see fig. 2) nearest the central region of the wafer 1 The method comprises the steps of carrying out a first treatment on the surface of the Distance z between adjacent landing units on the main gate 24 (see fig. 2) nearest the edge region of the wafer 2 . Specifically, the distance between the overlapping units means the distance between the center lines (in the width direction or in the direction perpendicular to the laser groove) thereof. Through the two distances, the deviation condition of the main grid and the laser groove can be effectively judged, and further the deviation condition of the lap joint position of the main grid and the auxiliary grid can be judged.
S4: calculating an auxiliary grid offset distance and a main grid offset distance;
specifically, in the present invention, the sub-gate offset spacing between the sub-gate and the laser trench can be characterized by three means:
first sub-grid offset distance delta between laser groove and sub-grid center point 1 Second sub-gate offset spacing delta between laser groove and sub-gate endpoint 2 And a third sub-grid offset spacing delta at 1/4 length of the laser groove and the sub-grid 3 . Specifically, the sub-grating offset distance between the laser groove and the sub-grating is calculated according to the following formula:
δ 1 ＝x-y 1
δ 2 ＝x-y 2
δ 3 ＝x-y 3
wherein delta 1 For the first sub-gate offset spacing, delta, between the laser groove and the sub-gate 2 For the second sub-gate offset spacing, delta, between the laser groove and the sub-gate 3 A third sub-grid offset distance between the laser groove and the sub-grid, x is the distance between adjacent laser grooves, y 1 Y is the distance between the centers of adjacent sub-grids 2 Is the distance between adjacent sub-gate endpoints; y is 3 Is the distance at 1/4 of the length of the adjacent subgrade.
Specifically, in the present invention, the main gate offset spacing between the main gate and the laser trench can be characterized by two ways:
laser groove and main part nearest to silicon chip central areaFirst main gate offset spacing lambda between overlap cells on gate 1 Second main gate offset distance lambda between laser groove and main gate upper lap joint unit nearest to silicon chip edge area 2 The method comprises the steps of carrying out a first treatment on the surface of the Specifically, the main gate offset pitch is calculated by the following formula set:
λ 1 ＝x-z 1
λ 2 ＝x-z 2
wherein lambda is 1 For a first primary grid offset spacing, lambda, between the laser groove and the landing cell 2 The second main grid offset distance between the laser groove and the lap joint unit is set; x is the distance between adjacent laser grooves, z 1 The distance between adjacent lapping units on the main grid closest to the central area of the silicon wafer; z 2 Is the distance between adjacent bridging units on the main gate nearest to the edge region of the wafer.
S5: adjusting the auxiliary grid according to the auxiliary grid offset distance; adjusting the main grid plate according to the main grid offset distance;
specifically, the inventor finds that the offset condition between the laser groove and the main grid/auxiliary grid line can be improved by adjusting the PT value of the screen and the tension value of the screen in the actual adjusting process, so that the offset condition of the lap joint of the main grid and the auxiliary grid is improved. However, how does it decide to adjust the object, i.e., how does it decide to adjust the screen PT value or the screen tension value, or adjust both at the same time? Is the first problem to be solved. And after the adjustment object is determined, how to quantitatively adjust the screen PT value and/or the screen tension value according to the offset condition is a second problem to be solved. For this purpose, the invention proposes the following scheme:
specifically, in one embodiment of the present invention, the adjustment object of the sub-reticle is determined according to the following method:
when delta 1 =0 and δ 2 When=0, the secondary reticle parameters are not adjusted;
when delta 1 =0 and δ 2 When the tension value is not equal to 0, the tension value of the auxiliary grid plate is adjusted;
when delta 1 Not equal to 0 and delta 2 If not equal to 0, the PT value of the secondary grid plateAnd the tension value.
That is, the adjustment object is determined based on the first sub-gate offset pitch and the second sub-gate offset pitch.
Determining an adjustment object of the main grid plate according to the following method:
when lambda is 1 =0 and λ 2 When=0, the main grid parameters are not adjusted;
when lambda is 1 ≠0，λ 2 Not equal to 0, and lambda 1 ＝λ 2 When the PT value of the main grid plate is regulated;
when lambda is 1 ≠0，λ 2 Not equal to 0, and lambda 1 ≠λ 2 When the method is used, the PT value of the main grid plate is adjusted, and then the tension of the main grid plate is adjusted.
In another embodiment of the invention, the adjustment object of the secondary reticle may be determined according to the following method:
when delta 1 ＝0，δ 2 =0 and δ 3 When=0, the secondary reticle parameters are not adjusted;
when delta 1 ＝0，δ 2 Not equal to 0 and delta 3 When the tension value is not equal to 0, only the tension value of the auxiliary grid plate is adjusted;
when delta 1 ≠0，δ 2 Not equal to 0 and delta 3 Not equal to 0, and adjusting the PT value and/or the tension value of the auxiliary grid plate.
That is, the sub-reticle adjustment object is determined according to the first sub-grid offset pitch, the second sub-grid offset pitch, and the third offset pitch.
In yet another embodiment of the present invention, the secondary reticle adjustment object may be determined according to the following method:
when delta 1 ＝0，δ 2 =0 and δ 3 When=0, the secondary reticle parameters are not adjusted;
when delta 1 ＝0，δ 2 Not equal to 0 and delta 3 When the tension value is not equal to 0, only the tension value of the auxiliary grid plate is adjusted;
when delta 1 Not equal to 0, and delta 1 ＝δ 2 ＝δ 3 When the PT value of the secondary grid plate is regulated;
when delta 1 ≠0，δ 2 ≠0，δ 3 ≠0，δ 1 ≠δ 2 And delta 2 ≠δ 3 When the method is used, the PT value of the auxiliary grid plate is adjusted, and then the tension of the auxiliary grid plate is adjusted.
Accordingly, after the adjustment object is determined, a specific adjustment amount needs to be determined, and for the sub-gate:
in particular, when delta 1 ≠0，δ 2 ≠0，δ 3 Not equal to 0, and delta 1 ＝δ 2 ＝δ 3 When the PT value of the secondary grid plate is regulated; wherein, the PT value of the auxiliary grid plate is adjusted according to the following formula:
PT FA ＝PT FB +(N-1)δ 1
wherein PT FA To adjust the PT value of the rear auxiliary grid plate, PT FB In order to adjust PT value of front auxiliary grid plate, N is total number of laser grooves, delta 1 A first sub-grid offset distance between the laser groove and the sub-grid;
in particular, when delta 1 ＝0，δ 2 ≠0，δ 3 Not equal to 0 and delta 2 ≠δ 3 When the auxiliary grid plate tension value is adjusted;
wherein, the tension value of the auxiliary grid plate is adjusted according to the following formula:
wherein F is FA To adjust the tension value of the rear auxiliary grid plate, F FB To adjust the tension value delta of the front auxiliary grid plate 2 For the second sub-gate offset spacing, delta, between the laser groove and the sub-gate 3 And the third sub-grid offset distance between the laser groove and the sub-grid.
In particular, when delta 1 ＝0，δ 2 ≠0，δ 3 Not equal to 0 and delta 2 ＝δ 3 When the screen tension value is adjusted; wherein, the tension value of the auxiliary grid plate is adjusted according to the following formula:
wherein F is FA To adjust the tension value of the rear auxiliary grid plate, F FB To adjust the tension value delta of the front auxiliary grid plate 2 Is the second sub-gate offset spacing between the laser groove and the sub-gate.
In particular, when delta 1 ≠0，δ 2 ≠0，δ 3 ≠0，δ 1 ≠δ 2 ，δ 1 ≠δ 3 And delta 2 ＝δ 3 When the method is used, the PT value of the auxiliary grid plate is adjusted, and then the tension value of the grid plate is adjusted;
wherein, the PT value of the auxiliary grid plate is adjusted according to the following formula:
PT FA ＝PT FB +(N-1)δ 1
wherein PT FA To adjust the PT value of the rear auxiliary grid plate, PT FB In order to adjust PT value of front auxiliary grid plate, N is total number of laser grooves, delta 1 A first sub-grid offset distance between the laser groove and the sub-grid;
wherein, the tension value of the auxiliary grid plate is adjusted according to the following formula:
wherein F is FA To adjust the tension value of the rear auxiliary grid plate, F FB To adjust the tension value delta of the front auxiliary grid plate 2 Is the second sub-gate offset spacing between the laser groove and the sub-gate.
In particular, when delta 1 ≠0，δ 2 Not equal to 0 and delta 3 ≠0，δ 1 ≠δ 2 ，δ 1 ≠δ 3 And delta 2 ≠δ 3 When the method is used, the PT value of the auxiliary grid plate is adjusted, and then the tension value of the auxiliary grid plate is adjusted;
wherein, the PT value of the auxiliary grid plate is adjusted according to the following formula:
PT FA ＝PT FB +(N-1)δ 1
wherein PT FA To adjust the PT value of the rear auxiliary grid plate, PT FB In order to adjust PT value of front auxiliary grid plate, N is total number of laser grooves, delta 1 A first sub-grid offset distance between the laser groove and the sub-grid;
wherein, the tension value of the auxiliary grid plate is adjusted according to the following formula:
wherein F is FA To adjust the tension value of the rear auxiliary grid plate, F FB To adjust the tension value delta of the front auxiliary grid plate 2 For the second sub-gate offset spacing, delta, between the laser groove and the sub-gate 3 And the third sub-grid offset distance between the laser groove and the sub-grid.
For the main grid, after the adjustment object is determined, the adjustment method is as follows:
when lambda is 1 ≠0，λ 2 Not equal to 0, and lambda 1 ＝λ 2 When the PT value of the main grid plate is regulated; wherein, the main grid plate PT value is adjusted according to the following formula:
PT MA ＝PT MB +(N-1)λ 1
wherein PT MA To adjust the PT value of the rear main grid plate, PT MB In order to adjust PT value of front main grid plate, N is total number of laser grooves, lambda 1 Is the first main grid offset spacing between the laser groove and the main grid overlap unit.
When lambda is 1 ≠0，λ 2 Not equal to 0, and lambda 1 ≠λ 2 When the method is used, the PT value of the main grid plate is adjusted, and then the tension of the main grid plate is adjusted;
wherein, the main grid plate PT value is adjusted according to the following formula:
PT MA ＝PT MB +(N-1)λ 1
wherein PT MA To adjust the PT value of the rear main grid plate, PT MB In order to adjust PT value of front main grid plate, N is total number of laser grooves, lambda 1 A first main grid offset distance between the laser groove and the main grid overlap unit;
wherein, the main grid plate tension value is adjusted according to the following formula:
wherein F is MA To adjust the tension value of the rear main screen plate, F MB To adjust the tension value of the front main screen plate lambda 1 For a first main grid offset spacing, lambda, between the laser groove and the main grid overlap unit 2 Is the second main grid offset distance between the laser groove and the main grid overlap joint unit.
According to the adjustment method, the tension values and the screen PT values of the auxiliary screen plate and the main screen plate can be reasonably adjusted according to the auxiliary grid offset distance and the main grid offset distance. After the adjustment, printing is carried out in a divided manner, if offset exists at the lap joint position of the main grid and the auxiliary grid, the steps S1 to S5 are repeated until the offset is eliminated. By the adjusting method, offset at the joint of the main grid and the auxiliary grid can be eliminated by 2-5 times of trial printing.
In addition, it should be noted that in the conventional printing process, in order to reduce the sub-gate offset, the width (120-300 μm) of the laser groove is generally widened, which increases the occupied area of a single laser groove, and in order to widen the width of the laser groove, multiple laser processing at the same position is often required, which increases the probability of hidden cracking of the silicon wafer. The adjustment method can effectively reduce the offset, so that the width of the laser groove is reduced, the laser repeated processing is reduced, and the risk of hidden cracking of the silicon wafer is reduced.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that changes and modifications may be made without departing from the principles of the invention, such changes and modifications are also intended to be within the scope of the invention.
Claims (10)
1. The method for adjusting the primary and secondary grid offset of the step-by-step printing solar cell is characterized by comprising the following steps of:
(1) Separately and experimentally printing the auxiliary grid and the main grid on a silicon wafer provided with a laser groove; the auxiliary grid is arranged in the laser groove; the main grid comprises a main grid main body and a plurality of lap joint units; the lap joint unit is arranged in the laser groove and is perpendicular to the main grid main body; the auxiliary grid is arranged in the laser groove;
(2) Measuring the distance x between adjacent laser slots;
(3) Measuring distance y between adjacent subgate centers 1 And distance y between the end points 2 The method comprises the steps of carrying out a first treatment on the surface of the Measuring the distance z between adjacent overlapping units on the same main grid;
(4) Calculating an auxiliary grid offset distance and a main grid offset distance;
the sub-gate offset pitch is calculated according to the following formula:
δ 1 ＝x-y 1
δ 2 ＝x-y 2
wherein delta 1 For the first sub-gate offset spacing, delta, between the laser groove and the sub-gate 2 Is the second sub-grid offset distance between the laser groove and the sub-grid, x is the distance between adjacent laser grooves, y 1 Y is the distance between the centers of adjacent sub-grids 2 Is the distance between adjacent sub-gate endpoints;
the main gate offset distance is calculated according to the following formula:
λ＝x-z
wherein lambda is the offset distance of the main grid between the laser groove and the lapping unit, x is the distance between adjacent laser grooves, and z is the distance between adjacent lapping units on the same main grid;
(5) Adjusting the auxiliary grid according to the auxiliary grid offset distance; adjusting the main grid plate according to the main grid offset distance;
wherein when delta 1 =0 and δ 2 When the value is=0, the screen parameters are not adjusted;
when delta 1 =0 and δ 2 When the screen tension value is not equal to 0, adjusting the screen tension value;
when delta 1 Not equal to 0 and delta 2 When not equal to 0, the screen is alignedPT value and/or screen tension value are/is adjusted;
when λ=0, the main reticle parameters are not adjusted;
when lambda is not equal to 0, the parameters of the main grid plate are adjusted.
2. The method for adjusting the primary and secondary grid offset of a step-by-step printing solar cell according to claim 1, wherein the step (3) comprises:
(3.1) measuring the distance y between centers of adjacent sub-gates 1 Distance y between end points 2 And distance y at 1/4 length of the sub-gate 3
(3.2) measuring the distance z between adjacent lapping units on the main gate nearest to the center region of the silicon wafer 1 The method comprises the steps of carrying out a first treatment on the surface of the Measuring the distance z between adjacent bridging units on the main gate nearest to the edge region of the wafer 2 ；
The step (4) comprises:
(4.1) calculating a sub-gate offset pitch;
the sub-gate offset pitch is calculated by the following formula set:
δ 1 ＝x-y 1
δ 2 ＝x-y 2
δ 3 ＝x-y 3
wherein delta 1 For the first sub-gate offset spacing, delta, between the laser groove and the sub-gate 2 For the second sub-gate offset spacing, delta, between the laser groove and the sub-gate 3 A third sub-grid offset distance between the laser groove and the sub-grid, x is the distance between adjacent laser grooves, y 1 Y is the distance between the centers of adjacent sub-grids 2 Is the distance between adjacent sub-gate endpoints; y is 3 A distance of 1/4 of the length of the adjacent sub-grid;
(4.2) calculating a main gate offset pitch;
the main gate offset distance is calculated by the following formula:
λ 1 ＝x-z 1
λ 2 ＝x-z 2
wherein lambda is 1 Is a laser groove and a lap joint unitA first main gate offset spacing lambda between 2 Is the second main grid offset distance between the laser groove and the overlap unit, x is the distance between adjacent laser grooves, z 1 The distance between adjacent lapping units on the main grid closest to the central area of the silicon wafer; z 2 Is the distance between adjacent bridging units on the main gate nearest to the edge region of the wafer.
3. The method for adjusting the primary and secondary grid offset of the step-by-step printing solar cell according to claim 2, wherein in the step (5):
when delta 1 ＝0，δ 2 =0 and δ 3 When=0, the secondary reticle parameters are not adjusted;
when delta 1 ＝0，δ 2 Not equal to 0 and delta 3 When the tension value is not equal to 0, only the tension value of the auxiliary grid plate is adjusted;
when delta 1 ≠0，δ 2 Not equal to 0 and delta 3 Not equal to 0, and delta 1 ＝δ 2 ＝δ 3 When the PT value of the secondary grid plate is regulated;
when delta 1 ≠0，δ 2 ≠0，δ 3 ≠0，δ 1 ≠δ 2 And delta 2 ≠δ 3 When the method is used, the PT value of the auxiliary grid plate is adjusted, and then the tension of the auxiliary grid plate is adjusted.
4. The method for adjusting the primary and secondary grid offset of the step-by-step printing solar cell according to claim 2, wherein in the step (5):
when lambda is 1 =0 and λ 2 When=0, the main grid parameters are not adjusted;
when lambda is 1 ≠0，λ 2 Not equal to 0, and lambda 1 ＝λ 2 When the PT value of the main grid plate is regulated;
when lambda is 1 ≠0，λ 2 Not equal to 0, and lambda 1 ≠λ 2 When the method is used, the PT value of the main grid plate is adjusted, and then the tension of the main grid plate is adjusted.
5. The method for adjusting the primary and secondary grid offset of the step-by-step printing solar cell according to claim 2, wherein in the step (5):
when delta 1 ≠0，δ 2 ≠0，δ 3 Not equal to 0, and delta 1 ＝δ 2 ＝δ 3 When the method is used, only the PT value of the screen is regulated; wherein, the PT value of the auxiliary grid plate is adjusted according to the following formula:
PT FA ＝PT FB +(N-1)δ 1
wherein PT FA To adjust the PT value of the rear auxiliary grid plate, PT FB In order to adjust PT value of front auxiliary grid plate, N is total number of laser grooves, delta 1 A first sub-grid offset distance between the laser groove and the sub-grid;
when lambda is 1 ≠0，λ 2 Not equal to 0, and lambda 1 ＝λ 2 When the PT value of the main grid plate is regulated; wherein, the main grid plate PT value is adjusted according to the following formula:
PT MA ＝PT MB +(N-1)λ 1
wherein PT MA To adjust the PT value of the rear main grid plate, PT MB In order to adjust PT value of front main grid plate, N is total number of laser grooves, lambda 1 Is the first main grid offset spacing between the laser groove and the main grid overlap unit.
6. The method for adjusting the primary and secondary grid offset of the step-by-step printing solar cell according to claim 2, wherein in the step (5):
when delta 1 ＝0，δ 2 ≠0，δ 3 Not equal to 0 and delta 2 ≠δ 3 When the tension value of the auxiliary grid plate is adjusted;
wherein, the tension value of the auxiliary grid plate is adjusted according to the following formula:
wherein F is FA To adjust the tension value of the rear auxiliary grid plate, F FB To adjust the tension value of the front sub-reticle,δ 2 for the second sub-gate offset spacing, delta, between the laser groove and the sub-gate 3 And the third sub-grid offset distance between the laser groove and the sub-grid.
7. The method for adjusting the primary and secondary grid offset of a step-by-step printing solar cell according to claim 2, wherein in the step (5), when δ 1 ＝0，δ 2 ≠0，δ 3 Not equal to 0 and delta 2 ＝δ 3 When the auxiliary grid plate tension value is adjusted;
wherein, the tension value of the auxiliary grid plate is adjusted according to the following formula:
wherein F is FA To adjust the tension value of the rear auxiliary grid plate, F FB To adjust the tension value delta of the front auxiliary grid plate 2 Is the second sub-gate offset spacing between the laser groove and the sub-gate.
8. The method for adjusting the primary and secondary grid offset of the step-by-step printing solar cell according to claim 2, wherein in the step (5):
when delta 1 ≠0，δ 2 ≠0，δ 3 ≠0，δ 1 ≠δ 2 ，δ 1 ≠δ 3 And delta 2 ＝δ 3 When the method is used, the PT value of the auxiliary grid plate is adjusted, and then the tension value of the grid plate is adjusted;
wherein, the PT value of the auxiliary grid plate is adjusted according to the following formula:
PT FA ＝PT FB +(N-1)δ 1
wherein PT FA To adjust the PT value of the rear auxiliary grid plate, PT FB In order to adjust PT value of front auxiliary grid plate, N is total number of laser grooves, delta 1 A first sub-grid offset distance between the laser groove and the sub-grid;
wherein, the tension value of the auxiliary grid plate is adjusted according to the following formula:
wherein F is FA To adjust the tension value of the rear auxiliary grid plate, F FB To adjust the tension value delta of the front auxiliary grid plate 2 Is the second sub-gate offset spacing between the laser groove and the sub-gate.
9. The method for adjusting the primary and secondary grid offset of the step-by-step printing solar cell according to claim 2, wherein in the step (5):
when delta 1 ≠0，δ 2 Not equal to 0 and delta 3 ≠0，δ 1 ≠δ 2 ，δ 1 ≠δ 3 And delta 2 ≠δ 3 When the method is used, the PT value of the auxiliary grid plate is adjusted, and then the tension value of the auxiliary grid plate is adjusted;
wherein, the PT value of the auxiliary grid plate is adjusted according to the following formula:
PT FA ＝PT FB +(N-1)δ 1
wherein PT FA To adjust the PT value of the rear auxiliary grid plate, PT FB In order to adjust PT value of front auxiliary grid plate, N is total number of laser grooves, delta 1 A first sub-grid offset distance between the laser groove and the sub-grid;
wherein, the tension value of the auxiliary grid plate is adjusted according to the following formula:
wherein F is FA To adjust the tension value of the rear auxiliary grid plate, F FB To adjust the tension value delta of the front auxiliary grid plate 2 For the second sub-gate offset spacing, delta, between the laser groove and the sub-gate 3 And the third sub-grid offset distance between the laser groove and the sub-grid.
10. The method for adjusting the primary and secondary grid offset of the step-by-step printing solar cell according to claim 2, wherein in the step (5):
when lambda is 1 ≠0，λ 2 Not equal to 0, and lambda 1 ≠λ 2 When the method is used, the PT value of the main grid plate is adjusted, and then the tension of the main grid plate is adjusted;
wherein, the main grid plate PT value is adjusted according to the following formula:
PT MA ＝PT MB +(N-1)λ 1
wherein PT MA To adjust the PT value of the rear main grid plate, PT MB In order to adjust PT value of front main grid plate, N is total number of laser grooves, lambda 1 A first main grid offset distance between the laser groove and the main grid overlap unit;
wherein, the main grid plate tension value is adjusted according to the following formula:
wherein F is MA To adjust the tension value of the rear main screen plate, F MB To adjust the tension value of the front main screen plate lambda 1 For a first main grid offset spacing, lambda, between the laser groove and the main grid overlap unit 2 Is the second main grid offset distance between the laser groove and the main grid overlap joint unit.
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