CN111694083A - Wafer-level polarizing optical device and preparation method thereof - Google Patents
Wafer-level polarizing optical device and preparation method thereof Download PDFInfo
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- CN111694083A CN111694083A CN202010540880.7A CN202010540880A CN111694083A CN 111694083 A CN111694083 A CN 111694083A CN 202010540880 A CN202010540880 A CN 202010540880A CN 111694083 A CN111694083 A CN 111694083A
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- G02—OPTICS
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- G02B5/3083—Birefringent or phase retarding elements
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Abstract
The invention relates to a wafer-level polarization optical device and a preparation method thereof, wherein the wafer-level polarization optical device comprises: the substrate is provided with a bearing surface, and the bearing surface is provided with a first direction and a second direction; a plurality of right angle triangular prism along first direction array distribution, the setting is at the loading end, and with basement formula structure as an organic whole, each right angle triangular prism extends along the direction that is on a parallel with the second direction, and first surface and second surface have, first surface connects perpendicularly in the loading end, first surface and loading end are connected to the second surface, and be the settlement contained angle with the first surface, set up basement and a plurality of right angle triangular prism into the integral type structure, so that the right angle triangular prism can not follow the basement and drop when rising and falling temperature curve test, thereby make wafer level polarization optical device's structural stability better, the product yield is higher, the durability is stronger, and adopt same material integrated into one piece, structure and preparation technology are comparatively simple.
Description
Technical Field
The invention relates to the technical field of display, in particular to a wafer-level polarization optical device and a preparation method thereof.
Background
In the field of display technology, wafer-level polarization optical devices are used to achieve light polarization effects, for example, a polarizer is used to convert natural light into polarized light vibrating along some directions, to achieve shielding of incident light, and to retain light in a desired vibration direction, and for example, a wave plate uses a birefringent material to adjust the polarization state of a light beam, to achieve phase shift, and commonly used wave plates include half-wave plates and quarter-wave plates. The half-wave plate, the quarter-wave plate and the polaroid are matched, so that any polarization state can be generated.
The existing polaroid mainly comprises glass and a metal wire grating arranged on the glass, but because the adhesive force of the metal wire grating is limited, the metal wire grating is subjected to thermal expansion during a temperature rise and drop curve test, and the adhesive force change can cause the metal wire grating to be stripped, so that the polaroid is damaged, and the polarization effect is influenced; the existing wave plate birefringence uniaxial crystal (such as quartz crystal) is manufactured, the thickness of the wave plate, the material and the working wavelength have great influence on the offset of the phase, but the thickness of the existing uniaxial crystal and the precision of the cutting angle are not easy to control, so that the accuracy of the phase offset is poor, and the polarization effect is influenced.
Disclosure of Invention
Therefore, it is necessary to provide a wafer-level polarization optical device and a method for manufacturing the same, aiming at the problem of poor structural stability of the wafer-level polarization optical device.
A wafer-level polarizing optical device, comprising:
the device comprises a substrate, a first substrate and a second substrate, wherein the substrate is provided with a bearing surface which is provided with a first direction and a second direction;
a plurality of right angle triangular prism along first direction array distribution sets up the loading end, and with basement formula structure as an organic whole, each right angle triangular prism extends along the direction that is on a parallel with the second direction, and has first surface and second surface, first surface connect perpendicularly in the loading end, the second surface is connected the first surface with the loading end, and with the first surface is the settlement contained angle.
Above-mentioned wafer level polarization optical device, because second surface and first surface are the setting for contained angle setting, the incident light of perpendicular to loading surface shines on the second surface, take place the reflection on the second surface, continue transmission in the right angle triangular prism, shine on the first surface, then take place the reflection on the first surface, continue transmission in the right angle triangular prism, and pass through the second surface perpendicularly, the incident light is complementary with the setting for contained angle between second surface and the first surface through the polarized light of formation behind the right angle triangular prism and the polarization angle between the incident light, make incident light take place the polarization. Set up basement and right angle triangular prism into the integral type structure to make the right angle triangular prism can not follow the basement and drop when rising the temperature curve test, thereby make wafer level polarization optical device's structural stability better, the product yield is higher, and the durability is stronger, and adopt same kind of material integrated into one piece, structure and preparation technology are comparatively simple.
In one embodiment, the set included angle is 32-38 degrees.
The wafer-level polarization optical device forms the polarizer with good polarization effect by limiting the set included angle between the second surface and the first surface to be 32-38 degrees.
In one embodiment, a phase retardation layer is disposed on the second surface.
In the wafer-level polarization optical device, the phase delay layer is arranged on the second surface to form the wave plate.
In one embodiment, the set included angle is 49-55 degrees.
The wafer-level polarization optical device improves the phase delay effect by limiting the set included angle between the second surface and the first surface to be 49-55 degrees.
In one embodiment, the extending heights of all the first surfaces are the same along the direction perpendicular to the bearing surface by taking the bearing surface as a reference.
The wafer-level polarization optical device is simple in structure and convenient to manufacture, and the heights of the first surfaces are limited to be the same, so that the regularly-arranged right-angled triangular prisms are formed.
In one embodiment, in a direction perpendicular to the bearing surface, with the bearing surface as a reference, the extending height of at least one first surface in the right triangular prism is different from the extending height of the first surface at the rest positions.
According to the wafer-level polarization optical device, the height of the first surface of the right-angle triangular prism in the extending direction parallel to the second direction is limited to form the irregularly-arranged right-angle triangular prisms, and the wafer-level polarization optical device is suitable for different application scenes.
In one embodiment, an extension height of at least one of the first surfaces in a cross section perpendicular to the second direction is different from an extension height of the remaining first surfaces.
The wafer-level polarization optical device is suitable for different application scenes by limiting the difference of the heights of the first surface along the direction vertical to the bearing surface on the cross section vertical to the second direction to form the irregularly-arranged right-angled triangular prism.
In addition, the invention also provides a method for manufacturing the wafer-level polarization optical device according to any one of the above technical schemes, which comprises the following steps:
step S901, coating a layer of adhesive material on a substrate;
step S902, a substrate layer and a right-angled triangular prism layer positioned on the substrate layer are molded by nano-imprinting;
step S903, cutting the substrate layer and the right-angle triangular prism layer to form a wafer-level polarizing optical device, and separating the wafer-level polarizing optical device from the substrate.
The preparation method of the wafer-level polarization optical device comprises the following steps of firstly, coating a layer of glue material on a substrate in the step S901; then, through the step S902, a substrate layer with a set thickness is formed by adopting nano-imprinting, and the right-angle triangular prism layer is continuously imprinted; next, in step S903, the base layer and the right-angled triangular prism layer formed in step S902 are cut to form a plurality of wafer-level polarizing optical devices, and the wafer-level polarizing optical devices are separated from the substrate, thereby completing the preparation of the wafer-level polarizing optical devices. The preparation method is simple and easy to realize, the substrate layer and the right-angle triangular prism layer are integrally formed by the same glue material, the prepared wafer-level polarizing optical device is simple in structure, and the right-angle triangular prism cannot fall off from the substrate when a temperature rise and fall curve test is carried out, so that the wafer-level polarizing optical device is good in structural stability, high in product yield and strong in durability, the size of the right-angle triangular prism can be accurately controlled through nanoimprint, and the polarizing effect of the wafer-level polarizing optical device is good.
In one embodiment, before separating the wafer-level polarization optical device from the substrate, a phase retardation film layer is formed on the right triangular prism layer by evaporation.
The method for manufacturing the wafer-level polarization optical device forms a phase delay film layer on the right-angle triangular prism layer by evaporation, and the method for manufacturing the phase delay film layer includes, but is not limited to, an evaporation process.
In one embodiment, the adhesive material is a UV curable adhesive, an OC adhesive, or a heat sensitive adhesive.
According to the preparation method of the wafer-level polarization optical device, the material of the rubber material is limited, so that the wafer-level polarization optical device can be conveniently processed and prepared.
Drawings
FIG. 1 is a schematic diagram of a wafer-level polarization optical device according to the present invention;
FIG. 2 is a cross-sectional view of a wafer-level polarizing optic according to the present invention;
FIG. 3 is a schematic diagram of an optical path of a wafer-level polarization optical device according to the present invention;
FIG. 4 is a schematic diagram of another wafer-level polarizing optical device according to the present invention;
FIG. 5 is a cross-sectional view of another wafer-level polarizing optic provided by the present invention;
FIG. 6 is a schematic diagram of an optical path of a wafer-level polarization optical device according to the present invention;
FIG. 7 is a top view of yet another wafer level polarizing optic provided by the present invention;
FIG. 8 is a cross-sectional view of yet another wafer-level polarizing optical device provided by the present invention;
fig. 9 is a flowchart of a method for manufacturing a wafer-level polarization optical device according to the present invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting of the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like as used herein are for illustrative purposes only and do not denote a unique embodiment.
As shown in fig. 1, 2 and 3, the present invention provides a wafer-level polarization optical device 100 for adjusting the polarization state of incident light, the wafer-level polarization optical device 100 includes two parts, i.e., a substrate 110 and a plurality of right-angled triangular prisms 120, wherein:
the substrate 110 has a carrying surface, the carrying surface is perpendicular to the thickness direction of the substrate 110, the carrying surface has a first direction X and a second direction Y, and the first direction X is perpendicular to the second direction Y;
the plurality of right-angle triangular prisms 120 distributed in an array along the first direction X are disposed on the bearing surface, and the plurality of right-angle triangular prisms 120 and the substrate 110 are of an integrated structure, a cross section of the plurality of right-angle triangular prisms 120 along a direction perpendicular to the bearing surface is of a saw-toothed structure, the saw-toothed structure includes a plurality of right-angle triangles arranged in sequence, and a hypotenuse of the right-angle triangles extends to a perpendicular side of a right-angle triangle adjacent to the right-angle triangle, each right-angle triangular prism 120 extends along a direction parallel to the second direction Y, and each right-angle triangular prism 120 has a first surface 122 and a second surface 123, the first surface 122 is connected with the bearing surface, and the first surface 122 is perpendicular to the bearing surface, the second surface 123 is respectively connected with the first surface 122 and the bearing surface, and the second surface 123 is at a set included.
In the wafer-level polarization optical device 100, the second surface 123 and the first surface 122 are arranged at a set included angle, so that incident light perpendicular to the bearing surface is irradiated onto the second surface 123, reflected on the second surface 123, continuously transmitted in the right-angle triangular prism 120, irradiated onto the first surface 122, reflected on the first surface 122, continuously transmitted in the right-angle triangular prism 120 and vertically passes through the second surface 123, and a polarization angle between the incident light and polarized light formed after the incident light passes through the right-angle triangular prism 120 is complementary to the set included angle between the second surface 123 and the first surface 122, so that the incident light is polarized upwards. Set up basement 110 and right angle triangular prism 120 to the integral type structure to make right angle triangular prism 120 can not drop from basement 110 when rising the test of cooling curve, thereby make wafer level polarization optical device 100's structural stability better, the product yield is higher, and the durability is stronger, and adopt same kind of material integrated into one piece, structure and preparation technology are comparatively simple.
The right triangular prism 120 has various, and in a preferred embodiment, as shown in fig. 1, 2 and 3, the set angle between the second surface 123 and the first surface 122 may be 32-38 °. Preferably, the set angle between the second surface 123 and the first surface 122 may be 35 °.
The wafer-level polarization optical device 100 forms a polarizer with a good polarization effect by limiting the set included angle between the second surface 123 and the first surface 122 to be 32-38 degrees. In a specific arrangement, the set angle between the second surface 123 and the first surface 122 may be 32 ° to 38 °, the set angle between the second surface 123 and the first surface 122 may also be other values in a range that can satisfy the polarization effect, and the set angle between the second surface 123 and the first surface 122 may be 32 °, 33 °, 34 °, 35 °, 36 °, 37 °, and 38 °. Of course, the set angle between the second surface 123 and the first surface 122 is not limited to the above values, and may be any value within the range of 32-38, and the specific value of the set angle between the second surface 123 and the first surface 122 is determined according to the actual situation of the wafer-level polarization optical device 100.
The right triangular prism 120 has various shapes, as shown in fig. 4 and 5, and in a preferred embodiment, a phase retardation layer 130 is provided on the second surface 123.
The wafer-level polarization optical device 100 forms a wave plate by disposing the phase retardation layer 130 on the second surface 123. Incident light perpendicular to the bearing surface is irradiated onto the phase retardation layer 130, a part of the incident light is reflected on the phase retardation layer 130, another part of the incident light passes through the phase retardation layer 130 and is irradiated onto the second surface 123, is reflected on the second surface 123, and is emitted through the phase retardation layer 130, at this time, the propagation directions of the two parts of polarized light are parallel, and have a certain phase retardation.
In a preferred embodiment, as shown in fig. 4, 5 and 6, the set angle between the second surface 123 and the first surface 122 may be 49 ° to 55 °. Preferably, the set angle between the second surface 123 and the first surface 122 may be 52 °.
The wafer-level polarization optical device 100 improves the phase retardation effect by defining the set angle between the second surface 123 and the first surface 122 to be 49-55 °. In a specific arrangement, the set angle between the second surface 123 and the first surface 122 may be 49 ° to 55 °, the set angle between the second surface 123 and the first surface 122 may also be other values in a range that can satisfy the phase retardation effect, and the set angle between the second surface 123 and the first surface 122 may be 49 °, 50 °, 51 °, 52 °, 53 °, 54 °, and 55 °. Of course, the set angle between the second surface 123 and the first surface 122 is not limited to the above values, and may be any value within the range of 49 ° to 55 °, and the specific value of the set angle between the second surface 123 and the first surface 122 is determined according to the actual situation of the wafer-level polarization optical device 100. In addition, in order to further improve the phase shift amount, a plurality of wafer-level polarization optical devices 100 may be arranged in parallel to superimpose a single phase shift amount, and in addition, a plurality of wafer-level polarization optical devices 100 may be rotated in parallel to perform fine adjustment to further improve the accuracy of the phase shift amount.
Specifically, as shown in fig. 2, the extending heights of all the first surfaces 122 are the same along the direction perpendicular to the bearing surface with the bearing surface as a reference.
Above-mentioned wafer level polarization optical device 100, the polarization effect is confirmed through the contained angle of setting for between second surface 123 and the first surface 122, and when guaranteeing the polarization effect, the contained angle of setting for between second surface 123 and the first surface 122 is fixed, and all first surface 122's height can be the same also can be different, and is the same through the extension height of injecing first surface 122 to form the right angle triangular prism 120 of regular arrangement, simple structure, convenient preparation. In a specific arrangement, the height of each first surface 122 is the same at any position along the second direction Y, and the height of all first surfaces 122 along the direction parallel to the first direction X is the same.
To facilitate expanding the application range of the wafer-level polarization optical device 100, specifically, as shown in fig. 7, the extending height of the first surface 122 at least one of the right-angled triangular prisms 120 is different from the extending height of the first surface 122 at the rest positions along the direction perpendicular to the carrying surface and based on the carrying surface.
The wafer-level polarization optical device 100 is suitable for different application scenarios by defining the first surface 122 of the right-angled triangular prism 120 to be uneven in the extending direction parallel to the second direction Y so as to form the irregularly-arranged right-angled triangular prism 120. In a specific configuration, the number of the right-angled triangular prisms 120 of the wafer-level polarization optical device 100, in which the extension heights of the first surface 122 are different in the extension direction parallel to the second direction Y, may be one, two, three, or more, and each right-angled triangular prism 120 is in the extension direction parallel to the second direction Y, the extension height of the first surface 122 may be one, two, or more than two, which are higher or lower than the extension heights of the remaining positions, and the number and the positions of the right-angled triangular prisms 120 with different extension heights are determined according to the actual situation of the wafer-level polarization optical device 100.
To further facilitate expanding the application range of the wafer-level polarization optical device 100, as shown in fig. 8, more specifically, an extension height of at least one first surface 122 in a cross section perpendicular to the second direction Y of the right triangular prism 120 is different from an extension height of the remaining first surfaces 122.
The wafer-level polarization optical device 100 is suitable for different application scenarios by defining the extending heights of the first surface 122 of the right triangular prism 120 along the cross section perpendicular to the second direction Y to form the irregularly arranged right triangular prism 120. In a specific configuration, the extending heights of any position of each right triangular prism 120 in the wafer-level polarization optical device 100 may be the same or different, the number of the right triangular prisms 120 having different extending heights along the first surface 122 parallel to the first direction X may be one, two, three, or more than three, and the connecting lines of the positions of the plurality of right triangular prisms 120 having different heights are parallel to the first direction X, and the number and the positions of the right triangular prisms 120 having different extending heights are determined according to the actual situation of the wafer-level polarization optical device 100.
In the second embodiment, the first embodiment of the method,
in addition, as shown in fig. 9, the present invention further provides a method for manufacturing the wafer-level polarization optical device 100 according to any one of the above technical solutions, including:
step S901, coating a layer of adhesive material on a substrate; in a specific configuration, the process of forming the glue material on the substrate may be spin coating, spray coating or printing, but is not limited to the above process.
Step S902, a substrate layer and a right-angled triangular prism layer positioned on the substrate layer are molded by nano-imprinting; when specifically setting up, the thickness of stratum basale can be through the accurate control of nanoimprint equipment, and simultaneously, the angle between two surfaces of right angle triangular prism layer also can be through the accurate control of nanoimprint equipment to make the precision higher.
Step S903, dicing the base layer and the right-angled triangular prism layer to form the wafer-level polarizing optical device 100, and separating the wafer-level polarizing optical device 100 from the substrate. In a specific arrangement, the substrate layer and the right-angled triangular prism layer are cut by a cutting device to form the wafer-level polarizing optical device 100, and the wafer-level polarizing optical device 100 may be directly torn off the substrate by a separating device, although the cutting and separating process is not limited.
The method for manufacturing the wafer-level polarization optical device 100 includes the steps of firstly, coating a layer of adhesive material on a substrate in step S901; then, through the step S902, a substrate layer with a set thickness is formed by adopting nano-imprinting, and the right-angle triangular prism layer is continuously imprinted; next, by step S903, the substrate layer and the rectangular prism layer are diced in step S902 to form a plurality of wafer-level polarizing optical devices 100, and the wafer-level polarizing optical devices 100 are separated from the substrate, completing the preparation of the wafer-level polarizing optical devices 100. The preparation method is simple and easy to implement, the substrate layer and the right-angle triangular prism layer are integrally formed by the same adhesive material, the prepared wafer-level polarizing optical device 100 is simple in structure, and the right-angle triangular prism 120 cannot fall off from the substrate 110 when a temperature rise and fall curve test is carried out, so that the wafer-level polarizing optical device 100 is good in structural stability, high in product yield and high in durability, the size of the right-angle triangular prism 120 can be accurately controlled through nanoimprint, and the wafer-level polarizing optical device 100 is good in polarizing effect.
In order to facilitate the preparation of the phase retardation layer 130, in a preferred embodiment, before separating the wafer-level polarization optical device 100 from the substrate, a phase retardation film layer is formed on the right-angled triangular prism layer by evaporation.
The method for manufacturing the wafer-level polarization optical device 100 forms a phase retardation film layer on the right triangular prism layer by evaporation, and the method for manufacturing the phase retardation film layer includes, but is not limited to, an evaporation process. In a specific setting, the phase retardation film layer may completely cover the inclined plane of the rectangular prism layer, and the phase retardation film layer may also cover only a portion of the inclined plane of the rectangular prism layer to form a phase retardation effect and a polarization effect in different regions, and the phase retardation film layer on the second surface 123 of each rectangular prism 120 after cutting is the phase retardation layer 130.
Specifically, the material of the phase retardation film layer may be a dielectric material, a metal, or a high molecular polymer.
In the above method for manufacturing the wafer-level polarization optical device 100, the phase retardation film layer is made of a dielectric material, a metal, or a high molecular polymer, so that the light reflection effect and the penetration effect can be ensured, and the phase retardation effect can be improved. In a specific setting, the material of the phase retardation film layer may be polytetrafluoroethylene, polyvinyl chloride, metallic silver, metallic copper, etc., and the specific material of the phase retardation film layer is determined according to the actual situation of the wafer-level polarization optical device 100.
In a preferred embodiment, the adhesive material may be a UV curable adhesive, an OC adhesive, or a heat sensitive adhesive.
In the above method for manufacturing the wafer-level polarization optical device 100, the material of the limited adhesive material may be UV curable adhesive, OC adhesive or thermal adhesive, so as to facilitate the processing and manufacturing of the wafer-level polarization optical device 100. In a specific setting, the adhesive material may be UV curable adhesive, a layer of UV curable adhesive is coated on the substrate, a substrate layer and a right-angle triangular prism layer with a set thickness are formed by nanoimprint lithography and UV light curing, the adhesive material may be OC adhesive or thermal adhesive, a layer of OC adhesive or thermal adhesive is coated on the substrate, a substrate layer and a right-angle triangular prism layer with a set thickness are formed by nanoimprint lithography and thermal curing, of course, the adhesive material is not limited to the above materials, and the specific material of the adhesive material is determined according to the actual condition of the wafer-level polarization optical device 100.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A wafer-level polarizing optical device, comprising:
the device comprises a substrate, a first fixing device and a second fixing device, wherein the substrate is provided with a bearing surface which is provided with a first direction and a second direction which are vertical to each other;
a plurality of right angle triangular prism along first direction array distribution sets up the loading end, and with basement formula structure as an organic whole, each right angle triangular prism extends along the direction that is on a parallel with the second direction, and has first surface and second surface, first surface connect perpendicularly in the loading end, the second surface is connected the first surface with the loading end, and with the first surface is the settlement contained angle.
2. The wafer-level polarizing optical device of claim 1, wherein the set angle is 32 ° -38 °.
3. The wafer-level polarizing optical device of claim 1, wherein a phase retardation layer is disposed on the second surface.
4. The wafer-level polarizing optical device of claim 3, wherein the set angle is 49 ° -55 °.
5. The wafer-level polarizing optical device of claim 2 or 3, wherein all the first surfaces have the same extension height with respect to the carrying surface along a direction perpendicular to the carrying surface.
6. The wafer-level polarization optical device according to claim 2 or 3, wherein at least one of the right triangular prisms has an extension height of the first surface different from an extension height of the rest positions with respect to the carrying surface in a direction perpendicular to the carrying surface.
7. The wafer-level polarizing optical device of claim 6, wherein at least one of the first surfaces has an extended height in a cross-section perpendicular to the second direction that is different from the extended height of the remaining first surfaces.
8. A method of fabricating a wafer-level polarizing optical device according to any one of claims 1 to 7, comprising:
coating a layer of glue material on the substrate;
forming a substrate layer and a right-angle triangular prism layer on the substrate layer by nanoimprint lithography;
dicing the base layer and the right-angled triangular prism layer to form wafer-level polarizing optics, separating the wafer-level polarizing optics from the substrate.
9. The method of claim 8, further comprising forming a phase retardation film layer on the right triangular prism layer by evaporation before separating the wafer-level polarization optical device from the substrate.
10. The method of claim 8, wherein the glue material is a UV curable glue, an OC glue or a thermal glue.
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| US20180239215A1 (en) * | 2017-02-23 | 2018-08-23 | Kyungpook National University Industry-Academic Cooperation Foundation | Active prism structure and fabrication method therefor |
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