CN102751416A - Light-emitting diode for directly emitting linearly polarized light and manufacturing method of light-emitting diode - Google Patents
Light-emitting diode for directly emitting linearly polarized light and manufacturing method of light-emitting diode Download PDFInfo
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- CN102751416A CN102751416A CN2012102242345A CN201210224234A CN102751416A CN 102751416 A CN102751416 A CN 102751416A CN 2012102242345 A CN2012102242345 A CN 2012102242345A CN 201210224234 A CN201210224234 A CN 201210224234A CN 102751416 A CN102751416 A CN 102751416A
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Abstract
The invention provides a light-emitting diode for directly emitting linearly polarized lights and a manufacturing method of the light-emitting diode. The light-emitting diode is characterized in that an optical rotation array structure is formed on a substrate, a polarization light splitting array structure is formed on an epitaxial layer and is used for generating a light splitting effect on natural polarized lights so as to transmit P type polarized light and reflect S type polarized light, the optical rotation array structure is used for reflecting the S type polarized light reflected by the polarization light splitting array structure again and converting the S type polarized light into the P type polarized light which is transmitted by the polarization light splitting array structure again, thereby realizing the purpose of directly emitting the linearly polarized light without the introduction of an external polarizing film and providing convenience for the follow-up secondary optical design; the volume of application products in the corresponding fields is also reduced; the production cost of the application products is reduced; the light energy is fully used, and nearly no energy is lost; and the manufacturing method provided by the invention is mature in technology and is easy to implement.
Description
Technical field
The present invention relates to led chip and make the field, relate in particular to a kind of light-emitting diode and manufacturing approach thereof of direct emergent ray polarised light.
Background technology
Along with improving constantly and the continuous maturation of GaN (gallium nitride) based LED construction and perfect of III-V group-III nitride LED process technology; The application of LED has obtained enlarging rapidly; LED has been applied to the backlight of LCD and the lighting source of Projection Display in recent years; The same with ordinary light source, at present the light that sends of on the market LED also is the nature polarised light, needs the secondary optics design to introduce polarizer and the supporting final linearly polarized light of optics acquisition equally so LED is applied to the backlight of LCD and the lighting source of Projection Display; This not only increased whole optical system volume, improved cost, and caused the significant wastage of luminous energy.If can on the exiting surface of substrate or chip, produce some micro-structurals; Give led chip itself with polarization characteristic; Make its directly emergent ray polarised light, the LED of so this structure will need the field (like the illuminating lamp of miniature cash inspecting machine, motor vehicles anti-dazzle etc.) of polarized illumination to produce huge market value in field of liquid crystal display and some undoubtedly.
The patent No. is that the Chinese patent of CN1547056A discloses a kind of Shoot type polarized luminescence pipe and polarized luminescence array thereof; Directly polarizer is packaged in the housing with printing opacity glue; The luminous tube or the luminous tube array of the direct polarized light-emitting of miniature money identifier have been realized can be used for; But this patent does not design the structure of chip itself, is unfavorable for the utilization of luminous energy yet.
The patent No. is the LED that the Chinese patent of CN101088175A discloses a kind of polarization; Place the polarised light of birefringent material, wiregrating, multi-layer optical film, a direction of cholesteric material isopreference transmission on the surface of LED tube core; And the polarised light of another direction is returned LED tube core inside; Thereby generation partial poolarized light, this patent do not design the structure of LED tube core itself yet.
Summary of the invention
The purpose of this invention is to provide the directly light-emitting diode of emergent ray polarised light (LED), adopt structure provided by the present invention not only can realize the direct emergent ray polarised light of light-emitting diode, and energy loss is few, and luminous energy can be fully used.
For addressing the above problem; The present invention provides a kind of light-emitting diode of direct emergent ray polarised light; Said light-emitting diode upwards comprises substrate and epitaxial loayer successively by bottom; Said epitaxial loayer upper surface has the polarization spectro array structure, and said polarization spectro array structure is used for the natural polarised light with P type polarised light and S type polarised light produced and divides a light action, with transmission P type polarised light and reflect S type polarised light; Said substrate top surface has the optically-active array structure, said optically-active array structure be used for the S type polarised light of said polarization spectro array structure reflection again secondary reflection and convert P type polarised light into after outgoing once more.
Further, said Light-Emitting Diode also is provided with the high inverse medium film in broadband between said optically-active array structure and said epitaxial loayer.
Further, said Light-Emitting Diode also is provided with polarization beam splitter on said polarization spectro array structure.
Further, the place face of said optically-active array structure is parallel with the place face of polarization spectro array structure, and the angle of the bearing of trend of the bearing of trend of said optically-active array structure and said polarization spectro array structure is 43 °～47 °.
Further, the angle of the bearing of trend of the bearing of trend of said optically-active array structure and said polarization spectro array structure is 45 °.
Further, said optically-active array structure is formed by the polygon prismatic parallel arrangement of some identical first kind, and said polarization spectro array structure is formed by some second type of identical polygon prismatic parallel arrangements.
Further, said optically-active array structure is formed by some identical first kind triangular prism parallel arrangements, and said polarization spectro array structure is formed by some second type of identical triangular prism parallel arrangements.
Further, the angle of the incline of the incline of said first kind triangular prism and second type of triangular prism is 43 °～47 °.
Further, the angle of the incline of the incline of said first kind triangular prism and second type of triangular prism is 45 °.
Further, the bottom surface of said first kind triangular prism and second type of triangular prism is isosceles right triangle, and the hypotenuse of said isosceles right triangle is parallel to the place face of said optically-active array structure.
Further, the hypotenuse length range of said isosceles right triangle is 50nm～1000nm.
Further, said polarization spectro array structure is formed by some identical semicolumn parallel arrangements, and the arc surface of said semicolumn is to outer lug, and said optically-active array structure is formed by some identical groove parallel arrangements, and the cross section of said groove is semicircle.
Further, said optically-active array structure and said substrate are formed in one.
Further, said epitaxial loayer upwards comprises N type limiting layer, quantum well layer and P type limiting layer successively by bottom, and said P type limiting layer upper surface has said polarization spectro array structure.
Further, said polarization spectro array structure and P type limiting layer are formed in one.
Further, the material of said N type limiting layer and P type limiting layer is a gallium nitride.
Further, said light-emitting diode also comprises P type electrode and N type electrode, and said P type electrode is arranged on the said P type limiting layer, and said N type electrode is arranged on the said N type limiting layer.
Further, said light-emitting diode also comprises transparency electrode and passivation protection film, and said transparency electrode is positioned on the said epitaxial loayer, and said passivation protection film is covered on the said transparency electrode.
Further, the material of said substrate is sapphire, carborundum or silicon.
The present invention also provides a kind of manufacturing method for LED of direct emergent ray polarised light, comprising: Semiconductor substrate is provided, forms the optically-active array structure at said Semiconductor substrate upper surface; On said optically-active array structure, form epitaxial loayer; And at said epitaxial loayer upper surface formation polarization spectro array structure; Said polarization spectro array structure is used for the P type polarised light of transmission nature polarised light and reflects the S type polarised light of nature polarised light; Said substrate top surface has the optically-active array structure, said optically-active array structure be used for the S type polarised light of said polarization spectro array structure reflection again secondary reflection and convert P type polarised light into after outgoing once more.
Further, said manufacturing approach adopts nanometer embossing, focused-ion-beam lithography or chemical wet etching transfer method to form said optically-active array structure.
Further, said manufacturing approach adopts nanometer embossing, focused-ion-beam lithography or chemical wet etching transfer method to form said polarization spectro array structure.
Further; Said manufacturing approach is forming said optically-active array structure and is forming between the step of said epitaxial loayer; Also be included in and form the high inverse medium film in broadband on the said optically-active array structure, wherein adopt vapour deposition method or sputtering method on said optically-active array structure, to form the high inverse medium film in broadband.
Further; Said manufacturing approach is after the step that forms said epitaxial loayer; Also be included on the said polarization spectro array structure and form polarization beam splitter, wherein adopt vacuum optical coating method or sputtering method on said polarization spectro array structure, to form polarization beam splitter.
Further, the place face of said optically-active array structure is parallel with the place face of polarization spectro array structure, and the angle of the bearing of trend of the bearing of trend of said optically-active array structure and said polarization spectro array structure is 43 °～47 °.
Further, the angle of the bearing of trend of the bearing of trend of said optically-active array structure and said polarization spectro array structure is 45 °.
Further, said optically-active array structure is formed by the polygon prismatic parallel arrangement of some identical first kind, and said polarization spectro array structure is formed by some second type of identical polygon prismatic parallel arrangements.
Further, said optically-active array structure is formed by some identical first kind triangular prism parallel arrangements, and said polarization spectro array structure is formed by some second type of identical triangular prism parallel arrangements.
Further, the angle of the incline of the incline of said first kind triangular prism and second type of triangular prism is 43 °～47 °.
Further, the angle of the incline of the incline of said first kind triangular prism and second type of triangular prism is 45 °.
Further, the bottom surface of said first kind triangular prism and second type of triangular prism is isosceles right triangle, and the hypotenuse of said isosceles right triangle is parallel to the place face of said optically-active array structure.
Further, the hypotenuse length range of said isosceles right triangle is 50nm～1000nm.
Further, said optically-active array structure and said substrate are formed in one.
Further; Said epitaxial loayer upwards comprises N type limiting layer, quantum well layer and P type limiting layer successively by bottom; Said P type limiting layer upper surface has said polarization spectro array structure, adopts the metal organic chemical vapor deposition method to form said N type limiting layer, quantum well layer and P type limiting layer successively.
Further, said polarization spectro array structure and P type limiting layer are formed in one.
Further; Said manufacturing approach is forming the polarization spectro array structure and is forming between the step of transparency electrode; Also comprise: have formation P type electrode on the P type limiting layer of said polarization spectro array structure, and on said N type limiting layer, forming N type electrode.
Further, said manufacturing approach also comprises after the step that forms said polarization spectro array structure, on said polarization spectro array structure, forms transparency electrode; And on said transparency electrode, covering a passivation protection film, the material of said passivation protection film is silicon dioxide, silicon nitride or silicon oxynitride.
Further, said manufacturing approach also is included on the said polarization spectro array structure and forms polarization beam splitter in the step that forms polarization spectro array structure and formation transparency electrode.
In sum, light-emitting diode according to the invention is through being provided with the optically-active array structure in said substrate top surface, and on said epitaxial loayer, forms the polarization spectro array structure; Polarization spectro array structure transmission P type polarised light also reflects S type polarised light; The S type polarised light of reflection by the optically-active array structure again secondary reflection and convert P type polarised light into after, launch through the polarization spectro array structure, thereby light-emitting diode according to the invention need not introduced under the prerequisite of external polarizer; Realized the purpose of direct emergent ray polarised light; Provide convenience for follow-up secondary optics design, also dwindle the volume of corresponding field application product, reduced its production cost; Secondly; Light emitting diode construction provided by the present invention does not absorb S type polarised light in to P type polarized light transmission; But utilize again to its reflection and after converting P type polarised light to once more, can make full use of luminous energy, basic noenergy loss like this; At last, structure preparation technology provided by the present invention has several different methods to realize, technical maturity is prone to implement.
Description of drawings
Fig. 1 is the generalized section of the light-emitting diode of direct emergent ray polarised light in one embodiment of the invention.
Fig. 2 is a polarization spectro array structure sketch map in one embodiment of the invention.
Fig. 3 is the sketch map of optically-active array structure in one embodiment of the invention.
Fig. 4 is the cross-sectional view and the polarization spectro principle schematic of polarization spectro array structure in one embodiment of the invention.
Fig. 5 is the generalized section and the optically-active principle schematic of optically-active array structure in one embodiment of the invention.
Fig. 6 is the schematic flow sheet of the manufacture method of the light-emitting diode of direct emergent ray polarised light in one embodiment of the invention.
Embodiment
For making content of the present invention clear more understandable,, content of the present invention is described further below in conjunction with Figure of description.Certainly the present invention is not limited to this specific embodiment, and the general replacement that those skilled in the art knew also is encompassed in protection scope of the present invention.
Secondly, the present invention utilizes sketch map to carry out detailed statement, and when instance of the present invention was detailed, for the ease of explanation, sketch map did not amplify according to general ratio is local, should be with this as to qualification of the present invention.
Fig. 1 is the generalized section of the light-emitting diode of direct emergent ray polarised light in one embodiment of the invention; Fig. 2 is a polarization spectro array structure sketch map in one embodiment of the invention; Fig. 3 is the sketch map of optically-active array structure in one embodiment of the invention; Fig. 4 is the cross-sectional view and the polarization spectro principle schematic of polarization spectro array structure in one embodiment of the invention, and Fig. 5 is the generalized section and the optically-active principle schematic of optically-active array structure in one embodiment of the invention.
As shown in Figure 1; The present invention provides a kind of light-emitting diode of direct emergent ray polarised light; Said light-emitting diode upwards comprises substrate 1 and epitaxial loayer 5 successively by bottom, and said epitaxial loayer upper surface has the polarization spectro array structure, and said polarization spectro array structure is used for the natural polarised light with P type polarised light and S type polarised light is produced the branch light action; With transmission P type polarised light, reflection S type polarised light; Said substrate top surface has the optically-active array structure, and said optically-active array structure is used for the said S type polarised light of said polarization spectro array structure reflection secondary reflection again, and penetrates through the polarization spectro array structure once more after being converted into P type polarised light.
Wherein, natural polarised light comprises P type polarised light and S type polarised light, and wherein P type polarised light is meant that direction of vibration is parallel to the polarised light of the plane of incidence, and S type polarised light is meant the polarised light of direction of vibration perpendicular to the plane of incidence.
In preferred embodiment; Also be formed with the high inverse medium film 12 in broadband on said optically-active array structure 10 surfaces; Has polarization beam splitter 11 at said polarization spectro array structure 9 upper surfaces; 11 pairs of P types of said polarization beam splitter polarised light has the transmission effect, and S type polarised light is had reflex, and (wave-length coverage is that 300nm～800nm) wave band has highly reflective (reflected energy is more than 90%) to 12 pairs of visible lights of the high inverse medium film in said broadband.In addition, other produce the rete of spectrophotometric result, and also alternative polarization beam splitter 11 is arranged on the said polarization spectro array structure 9, and other can have the rete of reflex, and the high inverse medium film 12 in also alternative broadband is arranged on the optically-active array structure 10.
Light-emitting diode of the present invention can adopt sapphire, carborundum or the silicon material as substrate 1, and the substrate of other semiconductor material is also within thought range of the present invention.
In the present embodiment, said epitaxial loayer 5 upwards comprises N type limiting layer 2, quantum well layer 3 and P type limiting layer 4 successively by bottom.The material of said N type limiting layer 2 and P type limiting layer 4 is a gallium nitride.Said epitaxial loayer can be launched the natural polarised light that comprises S type polarised light and P type polarised light.
Minimum for making the nature polarised light be converted in the process of linearly polarized light energy loss; Usually hope that the nature polarised light can be penetrated from polarization spectro array structure 9 with vertical direction by the light of optically-active array structure 10 reflections as far as possible with vertical angle directive optically-active array structure 10 through the light that said polarization spectro array structure 9 is reflected equally as far as possible.So said optically-active array structure 10 can be formed by the polygon prismatic parallel arrangement of some identical first kind; For example parallelepiped (quadrangular), five arris posts, seven arris posts etc.; Said polarization spectro array structure 9 can be formed by some second type of identical polygon prismatic parallel arrangements, for example five arris posts, seven arris posts etc.
In conjunction with Fig. 1 and Fig. 2; In preferred embodiment; Said substrate 1 upper surface has optically-active array structure 10, and wherein said substrate 1 is formed in one with this optically-active array structure 10, and said optically-active array structure 10 is formed by some identical first kind triangular prism 10a parallel arrangements; In conjunction with Fig. 1 and Fig. 3, the upper surface of said epitaxial loayer 5 has polarization spectro array structure 9, and in the present embodiment, polarization spectro array structure 9 is formed on the said P type limiting layer 4, and polarization spectro array structure 9 is formed in one with said P type limiting layer 4; Said polarization spectro array structure 9 is formed by some second type of identical triangular prism 9a parallel arrangements; In conjunction with Fig. 2 and Fig. 3; Said first kind triangular prism 10a is identical with second type of triangular prism 9a shape and size; The place face of said optically-active array structure 10 is parallel with the place face of polarization spectro array structure 9; The angle of the incline of said first kind triangular prism 10a and the incline of second type of triangular prism 9a can be 43 °～47 °; Wherein preferable is 45 °, and the incline place face of said first kind triangular prism 10a is parallel with the incline place face of second type of triangular prism 9a, and the bearing of trend of the figure of being made up of second type of triangular prism 9a in the bearing of trend of the figure of being made up of first kind triangular prism 10a in the said optically-active array structure 10 and the polarization spectro array structure 9 is 43 °～47 ° angles; Concrete Fig. 4 and Fig. 5 of combining; In the present embodiment, the bearing of trend of said optically-active array structure 10, promptly the bearing of trend of first kind triangular prism 10a incline is positioned at XY plane, place and is 43 °～47 ° angles with the X axle; The bearing of trend of said polarization spectro array structure 9, the bearing of trend of promptly said second type of triangular prism 9a incline are positioned at the plane at XY place and parallel with the X axle equally.
In conjunction with Fig. 2 and Fig. 3; In preferred embodiment; The bottom surface of said first kind triangular prism 10a and second type of triangular prism 9a be isosceles right triangle (profile shown in Figure 1 is for cutting open along the bearing of trend of second type of triangular prism 9a side because the bearing of trend of said first kind triangular prism 10a and second type of triangular prism 9a is 45 degree angles, therefore as 1 in the angle that is of second type of triangular prism 9a be not 90 degree; It is not actual angle); The hypotenuse of said isosceles right triangle is parallel to the place face of said optically-active array structure 10, and the place face of said optically-active array structure 10 is parallel with the place face of polarization spectro array structure 9, so the hypotenuse of the isosceles right triangle of first kind triangular prism 10a is parallel to the place face of said optically-active array structure 10; The hypotenuse of said second type of triangular prism 9a is parallel to the place face of polarization spectro array structure 9; Two right-angle sides that are said isosceles right triangle are protruding side, and the triangular prism structure of bottom surface right-angled triangle can make the light of reflection the edge direction parallel with incident light penetrate, and keeps consistent light path direction of transfer; Reduce diffuse reflection and refraction, and then improve the outgoing brightness of LED light.In preferred embodiment, the hypotenuse length range of said isosceles right triangle is 50nm～1000nm, and this scope is selective transmission or reflect the natural polarised light that said LED sends preferably.
In addition; Other structures; For example said polarization spectro array structure 9 is formed by some identical semicolumn parallel arrangements; The arc surface of said semicolumn is to outer lug; 10 of said optically-active array structures are formed by some identical groove parallel arrangements, and the cross section of said groove is a semicircle etc., as long as the light that the nature polarised light is reflected through said polarization spectro array structure 9 can be as far as possible with vertical angle directive optically-active array structure 10; Penetrated from polarization spectro array structure 9 with vertical direction by the light of optically-active array structure 10 reflection equally as far as possible, with the mode that reduces energy in the process that the nature polarised light is converted into linearly polarized light all within thought range of the present invention.
Simultaneously, in conjunction with Fig. 1, said light-emitting diode also comprises P type electrode 7a and N type electrode 7b, and said P type electricity 7a is arranged on the said P type limiting layer 4, and said N type electrode 7b is arranged on the said N type limiting layer 2.Said P type electrode 7a and N type electrode 7b are used for applying voltage to said P type limiting layer 4 with N type limiting layer 2, so that quantum well layer 3 is luminous.The material of P type electrode 7a and N type electrode 7b is a kind of or its combination in any in chromium, platinum, titanium, aluminium, nickel and the gold.In addition; Said light-emitting diode comprises that also light-emitting diode according to the invention also comprises the transparency electrode 8 and passivation protection film 6 that is arranged on the epitaxial loayer; Said transparency electrode 8 can be indium tin oxide transparent conductive semiconductor film (ITO; Or the double-deck nesa coating that combines of indium tin oxide transparent conductive semiconductor film and zinc oxide (ZnO) base film Indium Tin Oxides).Said passivation protection film 6 is covered on the said transparency electrode, is used to play insulating effect.The material of said passivation protection film 6 can be silicon dioxide, silicon nitride or silicon oxynitride.
In conjunction with Fig. 4 and Fig. 5; The luminescent method of light-emitting diode of the present invention is: the quantum well layer 3 in the said epitaxial loayer 5 sends the natural polarization 20 that comprises S type polarised light and P type polarised light; Nature polarization 20 penetrates from epitaxial loayer 5, and through said polarization spectro array structure 9 and polarization beam splitter 11, said P type polarised light 21 is gone out by transmission; Said S type polarised light 22 is inner with polarization beam splitter 11 reflected back LED by said polarization spectro array structure 9; Towards said substrate 1 direction, when said optically-active array structure 10 of S type polarised light 22 processes that is reflected and broadband high inverse medium film 12, the S type polarised light 22 that is reflected is reflected once more; And being converted into P type polarised light 23, the P type polarised light 23 after this conversion can pass through said polarization spectro array structure 9 and send with polarization beam splitter 11 transmissions.
The course of work of light-emitting diode is specially: said P electrode 7a and N electrode 7b apply forward voltage; Electronics and hole can be at quantum well layer 3 places compound generation photon; Forming nature polarised light 20 outwards propagates; Because P type limiting layer 4 is provided with polarization spectro array structure 9; And be coated with polarization beam splitter 11 on the polarization spectro array structure 9, thus can see through polarization spectro array structure 9 and polarization beam splitter 11 along the P type polarised light 21 of X-direction vibration, and along the S type polarised light 22 of Y direction vibration by the inside of polarization beam splitter 11 reflected back LED; Because substrate 1 is provided with optically-active array structure 10, and is coated with the high inverse medium film 12 in broadband on the optically-active array structure 10, be returned the inner S type polarised light 22 of LED; For having optically-active array structure 10, its direction of vibration and X-direction linearly polarized light in angle of 45 degrees is according to the Fresnel theory; The linearly polarized light of this direction is after orthogonal two surface reflections; Its direction of vibration will become with X-direction-miter angle, so S type polarised light 22 is after high inverse medium film 12 reflections in optically-active array structure 10 and broadband, for the structure of said polarization spectro array structure 9; Just be converted into P type polarised light during again through said polarization beam splitter 11; Thereby almost the polarization spectro array structure 9 that passes through of noenergy loss penetrates once more, thereby without external devices, light-emitting diode is self to realize direct emergent ray polarised light.
The present invention also provides a kind of manufacturing method for LED of direct emergent ray polarised light, may further comprise the steps: Semiconductor substrate is provided, forms the optically-active array structure at said Semiconductor substrate upper surface; On said optically-active array structure, form epitaxial loayer; And at said epitaxial loayer upper surface formation polarization spectro array structure; Said polarization spectro array structure is used for the P type polarised light of transmission nature polarised light and reflects the S type polarised light of nature polarised light; Said substrate top surface has the optically-active array structure, said optically-active array structure be used for the S type polarised light of said polarization spectro array structure reflection again secondary reflection and convert P type polarised light into after outgoing once more.
Fig. 6 is the schematic flow sheet of the manufacture method of the light-emitting diode of direct emergent ray polarised light in one embodiment of the invention.As shown in Figure 6; Specify the manufacture process of the light-emitting diode of direct emergent ray polarised light in one embodiment of the invention below in conjunction with Fig. 1 to Fig. 6; Will be clear that; Other structures that are provided with on formation method, concrete structure and the epitaxial loayer of optically-active array structure and polarization spectro array structure are not limited to the description of present embodiment; Other can realize that said polarization spectro array structure can transmission P type polarised light; Reflection S type polarised light, said optically-active array structure can be with the S type polarised light of said polarization spectro array structure reflection secondary reflections again, and other light-emitting diode structure that convert P type polarised light into are also within thought range of the present invention.
Step S01: Semiconductor substrate 1 is provided, forms optically-active array structure 10 at said Semiconductor substrate upper surface; In preferred embodiment; Said optically-active array structure 10 is formed by some identical first kind triangular prism 10a parallel arrangements; Said optically-active array structure 10 is formed in one with said substrate 1; Wherein, can adopt ultraviolet photolithographic method, ICP etching method, nanometer embossing, focused-ion-beam lithography or chemical wet etching transfer method etc. to form said optically-active array structure 10.
Step S02: on said optically-active array structure 10, form the high inverse medium film 12 in broadband; In the present embodiment, can adopt vapour deposition method or sputtering method on said optically-active array structure 10, to form the high inverse medium film 12 in broadband.
Step S03: on the high inverse medium film 12 in said broadband, form epitaxial loayer 5, and form polarization spectro array structure 9 at said epitaxial loayer 6 upper surfaces; In preferred embodiment; The place face of said optically-active array structure 10 is parallel with the place face of polarization spectro array structure 9; Said polarization spectro array structure 9 is formed by some second type of identical triangular prism 9a parallel arrangements; Said first kind triangular prism 10a is identical with second type of triangular prism 9a shape and size, and the angle of the incline of said first kind triangular prism 10a and the incline of second type of triangular prism 9a is 45 degree; In preferred embodiment, said epitaxial loayer upwards comprises N type limiting layer 2, quantum well layer 3 and P type limiting layer 4 successively by bottom, can adopt the metal organic chemical vapor deposition method to form said N type limiting layer 2, quantum well layer 3 and P type limiting layer 4 successively.Said polarization spectro array structure 9 is formed in one with P type limiting layer 4, wherein, can adopt ultraviolet photolithographic method, ICP etching method, nanometer embossing, focused-ion-beam lithography or chemical wet etching transfer method etc. to form polarization spectro array structure 9.
Step S04: on said polarization spectro array structure 9, form polarization beam splitter 11;
Step S05: on said polarization beam splitter 11, form transparency electrode 8 and passivation layer 8, cover a passivation protection film 6 on the said transparency electrode 8, the material of said passivation protection film 6 is silicon dioxide, silicon nitride or silicon oxynitride.
In sum, light-emitting diode according to the invention is through being provided with the optically-active array structure in said substrate top surface, and on said epitaxial loayer, forms the polarization spectro array structure; When polarization spectro array structure transmission P type polarised light and reflect S type polarised light; After the S type polarised light of reflection and is converted into P type polarised light the reflection of optically-active array structure, launch through the polarization spectro array structure once more, thereby need not introduce under the prerequisite of external polarizer; Realized the purpose of direct emergent ray polarised light; Provide convenience for follow-up secondary optics design, also dwindle the volume of corresponding field application product, reduced its production cost; Secondly; Light emitting diode construction provided by the present invention does not absorb relative S type polarised light in to P type polarized light transmission; Again utilize but its recovery converted to behind the P type polarised light, can make full use of luminous energy, basic noenergy loss like this; At last, structure preparation technology provided by the present invention has several different methods to realize, technical maturity is prone to implement.
Though the present invention discloses as above with preferred embodiment; Right its is not in order to limit the present invention; Has common knowledge the knowledgeable in the technical field under any; Do not breaking away from the spirit and scope of the present invention, when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking claims person of defining.
Claims (39)
1. the light-emitting diode of a direct emergent ray polarised light, said light-emitting diode upwards comprises substrate and epitaxial loayer successively by bottom, it is characterized in that,
Said epitaxial loayer upper surface has the polarization spectro array structure, and said polarization spectro array structure is used for the natural polarised light with P type polarised light and S type polarised light produced and divides a light action, with transmission P type polarised light and reflect S type polarised light;
Said substrate top surface has the optically-active array structure, said optically-active array structure be used for the S type polarised light of said polarization spectro array structure reflection again secondary reflection and convert P type polarised light into after outgoing once more.
2. the light-emitting diode of direct emergent ray polarised light as claimed in claim 1 is characterized in that, between said optically-active array structure and said epitaxial loayer, also is provided with the high inverse medium film in broadband.
3. the light-emitting diode of direct emergent ray polarised light as claimed in claim 1 is characterized in that, on said polarization spectro array structure, also is provided with polarization beam splitter.
4. the light-emitting diode of direct emergent ray polarised light as claimed in claim 1; It is characterized in that; The place face of said optically-active array structure is parallel with the place face of polarization spectro array structure, and the angle of the bearing of trend of the bearing of trend of said optically-active array structure and said polarization spectro array structure is 43 °～47 °.
5. the light-emitting diode of direct emergent ray polarised light as claimed in claim 4 is characterized in that, the angle of the bearing of trend of the bearing of trend of said optically-active array structure and said polarization spectro array structure is 45 °.
6. the light-emitting diode of direct emergent ray polarised light as claimed in claim 1; It is characterized in that; Said optically-active array structure is formed by the polygon prismatic parallel arrangement of some identical first kind, and said polarization spectro array structure is formed by some second type of identical polygon prismatic parallel arrangements.
7. the light-emitting diode of direct emergent ray polarised light as claimed in claim 6; It is characterized in that; Said optically-active array structure is formed by some identical first kind triangular prism parallel arrangements, and said polarization spectro array structure is formed by some second type of identical triangular prism parallel arrangements.
8. the light-emitting diode of direct emergent ray polarised light as claimed in claim 7 is characterized in that, the angle of the incline of the incline of said first kind triangular prism and second type of triangular prism is 43 °～47 °.
9. the light-emitting diode of direct emergent ray polarised light as claimed in claim 8 is characterized in that, the angle of the incline of the incline of said first kind triangular prism and second type of triangular prism is 45 °.
10. the light-emitting diode of direct emergent ray polarised light as claimed in claim 7; It is characterized in that; The bottom surface of said first kind triangular prism and second type of triangular prism is isosceles right triangle, and the hypotenuse of said isosceles right triangle is parallel to the place face of said optically-active array structure.
11. the light-emitting diode of direct emergent ray polarised light as claimed in claim 10 is characterized in that, the hypotenuse length range of said isosceles right triangle is 50nm～1000nm.
12. the light-emitting diode of direct emergent ray polarised light as claimed in claim 1; It is characterized in that; Said polarization spectro array structure is formed by some identical semicolumn parallel arrangements; The arc surface of said semicolumn is to outer lug, and said optically-active array structure is formed by some identical groove parallel arrangements, and the cross section of said groove is semicircle.
13. the light-emitting diode like any described direct emergent ray polarised light in the claim 1 to 12 is characterized in that, said optically-active array structure and said substrate are formed in one.
14. light-emitting diode like any described direct emergent ray polarised light in the claim 1 to 12; It is characterized in that; Said epitaxial loayer upwards comprises N type limiting layer, quantum well layer and P type limiting layer successively by bottom, and said P type limiting layer upper surface has said polarization spectro array structure.
15. the light-emitting diode of direct emergent ray polarised light as claimed in claim 14 is characterized in that, said polarization spectro array structure and P type limiting layer are formed in one.
16. the light-emitting diode of direct emergent ray polarised light as claimed in claim 14 is characterized in that, the material of said N type limiting layer and P type limiting layer is a gallium nitride.
17. the light-emitting diode of direct emergent ray polarised light as claimed in claim 14; It is characterized in that; Said light-emitting diode also comprises P type electrode and N type electrode, and said P type electrode is arranged on the said P type limiting layer, and said N type electrode is arranged on the said N type limiting layer.
18. light-emitting diode like any described direct emergent ray polarised light in the claim 1 to 12; It is characterized in that; Said light-emitting diode also comprises transparency electrode and passivation protection film; Said transparency electrode is positioned on the said epitaxial loayer, and said passivation protection film is covered on the said transparency electrode.
19. the light-emitting diode like any described direct emergent ray polarised light in the claim 1 to 12 is characterized in that, the material of said substrate is sapphire, carborundum or silicon.
20. the manufacturing method for LED of a direct emergent ray polarised light comprises:
Semiconductor substrate is provided, forms the optically-active array structure at said Semiconductor substrate upper surface;
On said optically-active array structure, form epitaxial loayer; And at said epitaxial loayer upper surface formation polarization spectro array structure; Said polarization spectro array structure is used for the P type polarised light of transmission nature polarised light and reflects the S type polarised light of nature polarised light; Said substrate top surface has the optically-active array structure, said optically-active array structure be used for the S type polarised light of said polarization spectro array structure reflection again secondary reflection and convert P type polarised light into after outgoing once more.
21. the manufacturing method for LED of direct emergent ray polarised light as claimed in claim 20 is characterized in that, adopts nanometer embossing, focused-ion-beam lithography or chemical wet etching transfer method to form said optically-active array structure.
22. the manufacturing method for LED of direct emergent ray polarised light as claimed in claim 20 is characterized in that, adopts nanometer embossing, focused-ion-beam lithography or chemical wet etching transfer method to form said polarization spectro array structure.
23. the manufacturing method for LED of direct emergent ray polarised light as claimed in claim 20; It is characterized in that; Forming said optically-active array structure and forming between the step of said epitaxial loayer; Also be included in and form the high inverse medium film in broadband on the said optically-active array structure, wherein adopt vapour deposition method or sputtering method on said optically-active array structure, to form the high inverse medium film in broadband.
24. the manufacturing method for LED of direct emergent ray polarised light as claimed in claim 20; It is characterized in that; After the step that forms said epitaxial loayer; Also be included on the said polarization spectro array structure and form polarization beam splitter, wherein adopt vacuum optical coating method or sputtering method on said polarization spectro array structure, to form polarization beam splitter.
25. the manufacturing method for LED of direct emergent ray polarised light as claimed in claim 20; It is characterized in that; The place face of said optically-active array structure is parallel with the place face of polarization spectro array structure, and the angle of the bearing of trend of the bearing of trend of said optically-active array structure and said polarization spectro array structure is 43 °～47 °.
26. the manufacturing method for LED of direct emergent ray polarised light as claimed in claim 25 is characterized in that, the angle of the bearing of trend of the bearing of trend of said optically-active array structure and said polarization spectro array structure is 45 °.
27. the manufacturing method for LED of direct emergent ray polarised light as claimed in claim 20; It is characterized in that; Said optically-active array structure is formed by the polygon prismatic parallel arrangement of some identical first kind, and said polarization spectro array structure is formed by some second type of identical polygon prismatic parallel arrangements.
28. the manufacturing method for LED of direct emergent ray polarised light as claimed in claim 27; It is characterized in that; Said optically-active array structure is formed by some identical first kind triangular prism parallel arrangements, and said polarization spectro array structure is formed by some second type of identical triangular prism parallel arrangements.
29. the manufacturing method for LED of direct emergent ray polarised light as claimed in claim 28 is characterized in that, the angle of the incline of the incline of said first kind triangular prism and second type of triangular prism is 43 °～47 °.
30. the manufacturing method for LED of direct emergent ray polarised light as claimed in claim 29 is characterized in that, the angle of the incline of the incline of said first kind triangular prism and second type of triangular prism is 45 °.
31. the manufacturing method for LED of direct emergent ray polarised light as claimed in claim 29; It is characterized in that; The bottom surface of said first kind triangular prism and second type of triangular prism is isosceles right triangle, and the hypotenuse of said isosceles right triangle is parallel to the place face of said optically-active array structure.
32. the manufacturing method for LED of direct emergent ray polarised light as claimed in claim 31 is characterized in that, the hypotenuse length range of said isosceles right triangle is 50nm～1000nm.
33. the manufacturing method for LED of direct emergent ray polarised light as claimed in claim 20; It is characterized in that; Said polarization spectro array structure is formed by some identical semicolumn parallel arrangements; The arc surface of said semicolumn is to outer lug, and said optically-active array structure is formed by some identical groove parallel arrangements, and the cross section of said groove is semicircle.
34. the manufacturing method for LED like any described direct emergent ray polarised light in the claim 20 to 33 is characterized in that, said optically-active array structure and said substrate are formed in one.
35. manufacturing method for LED like any described direct emergent ray polarised light in the claim 20 to 33; It is characterized in that; Said epitaxial loayer upwards comprises N type limiting layer, quantum well layer and P type limiting layer successively by bottom; Said P type limiting layer upper surface has said polarization spectro array structure, adopts the metal organic chemical vapor deposition method to form said N type limiting layer, quantum well layer and P type limiting layer successively.
36. the manufacturing method for LED of direct emergent ray polarised light as claimed in claim 35 is characterized in that, said polarization spectro array structure and P type limiting layer are formed in one.
37. the manufacturing method for LED of direct emergent ray polarised light as claimed in claim 36; It is characterized in that; Forming the polarization spectro array structure and forming between the step of transparency electrode; Also comprise: have formation P type electrode on the P type limiting layer of said polarization spectro array structure, and on said N type limiting layer, forming N type electrode.
38. the manufacturing method for LED like any described direct emergent ray polarised light in the claim 20 to 33 is characterized in that, after the step that forms said polarization spectro array structure, also comprises,
On said polarization spectro array structure, form transparency electrode; And
On said transparency electrode, cover a passivation protection film, the material of said passivation protection film is silicon dioxide, silicon nitride or silicon oxynitride.
39. the manufacturing method for LED of direct emergent ray polarised light as claimed in claim 38; It is characterized in that; In the step that forms polarization spectro array structure and formation transparency electrode, also be included on the said polarization spectro array structure and form polarization beam splitter.
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| CN2012102242345A CN102751416A (en) | 2012-06-28 | 2012-06-28 | Light-emitting diode for directly emitting linearly polarized light and manufacturing method of light-emitting diode |
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