CN111668183A - Lead frame for chip packaging and preparation method - Google Patents
Lead frame for chip packaging and preparation method Download PDFInfo
- Publication number
- CN111668183A CN111668183A CN202010538887.5A CN202010538887A CN111668183A CN 111668183 A CN111668183 A CN 111668183A CN 202010538887 A CN202010538887 A CN 202010538887A CN 111668183 A CN111668183 A CN 111668183A
- Authority
- CN
- China
- Prior art keywords
- base island
- substrate
- copper foil
- photosensitive film
- island
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 78
- 229910052751 metal Inorganic materials 0.000 claims abstract description 78
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 230000000149 penetrating effect Effects 0.000 claims abstract description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 60
- 239000010410 layer Substances 0.000 claims description 55
- 239000011889 copper foil Substances 0.000 claims description 53
- 238000000034 method Methods 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 25
- 238000004519 manufacturing process Methods 0.000 claims description 23
- 239000011347 resin Substances 0.000 claims description 15
- 229920005989 resin Polymers 0.000 claims description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 238000007747 plating Methods 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 7
- 235000001674 Agaricus brunnescens Nutrition 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 206010070834 Sensitisation Diseases 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 230000008313 sensitization Effects 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 3
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- 239000010959 steel Substances 0.000 claims description 3
- 239000011135 tin Substances 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 239000003292 glue Substances 0.000 abstract description 10
- 230000007547 defect Effects 0.000 abstract description 5
- 238000005538 encapsulation Methods 0.000 abstract description 2
- 239000002585 base Substances 0.000 description 67
- 239000000126 substance Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 230000008602 contraction Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
The invention discloses a lead frame for chip packaging and a preparation method thereof. The lead frame comprises a substrate, a base island and a plurality of pins arranged around the periphery of the base island, wherein the base island comprises an upper base island arranged above the substrate, a lower base island arranged below the substrate, a penetrating substrate and a metal island for connecting the upper base island with the lower base island, the pins comprise an upper pin arranged above the substrate, a lower pin arranged below the substrate, a penetrating substrate and a metal column for connecting the upper pin with the lower pin. The base island and the pins of the lead frame are fixed by the substrate, and the base island and the pins are divided into an upper part and a lower part by the substrate, so that the downward leakage of packaging glue during packaging can be prevented, and the glue overflow defect of chip packaging is avoided; moreover, after the encapsulation is completed, no subsequent treatment is required on the surface of the lead frame.
Description
[ technical field ]
The present disclosure relates to chip packages, and particularly to a lead frame for chip packages and a method for manufacturing the lead frame.
[ background art ]
The lead frame mainly functions as a carrier for providing mechanical support for the chip, and is used as a conductive medium for connecting the chip circuit inside and outside to form an electric signal path and a heat dissipation path for dissipating heat generated during the operation of the chip together with the package shell. With the increase of the packaging density, the packaging volume is reduced, the lead density (the number of leads in unit packaging area) is rapidly increased, and the lead frame is short, light, thin, high-precision, multi-pin and small-pitch.
The production of conventional lead frames mainly includes two methods: the first is stamping, a whole metal plate is formed by stamping technology, for example, the invention is applied to the 201210564926.4 patent in China, the invention firstly takes a copper alloy sheet to stamp, and the copper alloy sheet is stamped by a high-speed punch press by means of a concave-convex die of a blanking die to form a lead frame; the second method is etching, and a whole metal plate is chemically etched to obtain a final metal lead frame. The lead frame obtained by the processing methods cannot realize the independent bonding pad, each part of the lead frame needs to be connected by the connecting rib, if the independent bonding pad is to be obtained, secondary etching is needed after packaging is finished, and the connection can be disconnected after the connecting rib is removed to obtain the real independent bonding pad.
Application No. 201410138222.X discloses a method for preparing a lead frame for chip packaging, which comprises the following steps: respectively attaching a layer of dry film to the upper surface and the lower surface of a whole metal copper foil substrate; removing part of the dry film on the upper surface of the metal copper foil matrix through exposure and development to expose the part of the metal copper foil needing to be removed by etching in the lead frame; etching and removing the metal copper foil part exposed in the previous step by using chemical liquid; bonding a layer of base material on the dry film on the upper surface of the metal copper foil matrix; and removing the dry film attached to the lower surface of the metal copper foil substrate to expose the lead frame. The method can obtain the lead frame with higher precision and the independent bonding pad, and meet the requirements of BGA products on high precision, multiple pins, small pitch and the like.
The lead frame is attached to the substrate, so that the glue overflow defect is easily generated during packaging; after the packaging is completed, the dry film attached to the base material needs to be removed, and surface treatment needs to be performed again, which increases subsequent treatment processes.
When the dry film attached to the lower surface of the metal copper foil substrate is removed to expose the lead frame, the upper dry film is damaged by the film removing liquid, so that the upper dry film is not stably adhered,
the electrodes of the invention can not be conducted with each other after being completely etched, the surface treatment can only adopt chemical plating, the common processes of chemical plating nickel, gold and the like need to reach the high temperature of 80 ℃, the dry film can be seriously damaged by the high temperature, and the adhesion of the dry film is unstable.
[ summary of the invention ]
The invention aims to solve the technical problem of providing a lead frame which is not easy to generate the glue overflow defect during chip packaging.
The invention aims to provide a preparation method of the lead frame.
In order to solve the technical problem, the invention adopts the technical scheme that the lead frame for chip packaging comprises a substrate, a base island and a plurality of pins arranged around the periphery of the base island, wherein the base island comprises an upper base island arranged above the substrate, a lower base island arranged below the substrate, a penetrating substrate and a metal island connecting the upper base island and the lower base island, and the pins comprise an upper pin arranged above the substrate, a lower pin arranged below the substrate, a penetrating substrate and a metal column connecting the upper pin and the lower pin.
The lead frame comprises a bearing film, wherein the bottom surface of the lower pin is attached to the bearing film; the top surface of the upper base island and the top surface of the upper pin respectively comprise a weldable metal layer, the bottom surface of the metal island comprises a weldable metal layer, and the weldable metal layer on the bottom surface of the metal island is the lower base island; the bottom surface of the metal column comprises a weldable metal layer, and the weldable metal layer on the bottom surface of the metal column is the lower pin.
In the lead frame, the transverse dimension of the weldable metal layer on the top surface of the upper base island is larger than that of the upper base island main body to form the mushroom head, and the transverse dimension of the weldable metal layer on the top surface of the upper pin is larger than that of the upper pin main body to form the mushroom head.
In the lead frame, the side surface of the upper base island and the side surface of the upper pin respectively comprise the browning layer, the blackening layer or the weldable metal layer.
In the lead frame, the shape of the upper base island body is different from that of the lower base island; the upper lead body has a shape different from that of the lower lead.
The substrate is an electrophoretic resin substrate, the main materials of the base island and the pins are copper or steel, and the weldable metal layer is a single layer or a composite layer of a plurality of gold, silver, nickel, copper, tin or tin alloy.
The preparation method of the lead frame comprises the following steps:
701) the second surface of the copper foil covers a first photosensitive film, and the first photosensitive film presses down the base island and the region except the lower pin to manufacture a hollowed-out pattern;
702) etching the second surface of the copper foil to a depth equivalent to the thickness of the substrate, forming a groove on the second surface of the copper foil, and filling resin in the groove to serve as the substrate;
703) removing the first photosensitive film, and electroplating a weldable metal layer on the second surface of the copper foil;
704) and forming an upper base island and an upper pin above the substrate by adopting an acid etching method or an alkaline etching method, wherein the step of covering a second photosensitive film on the first surface of the copper foil is included, and a hollowed-out pattern is manufactured on the second photosensitive film.
In the above-described manufacturing method, in step 704, the forming of the upper base island and the upper lead by the acid etching method includes the following steps:
801) the second photosensitive film is used for manufacturing the hollowed-out pattern according to the area except the upper base island and the upper pin;
802) etching the first surface of the copper foil to the filled resin surface;
803) and removing the second photosensitive film, and electroplating a weldable metal layer on the first surface of the copper foil.
In the above-described manufacturing method, in step 704, the alkali etching method for forming the upper base island and the upper lead includes the following steps:
901) the second photosensitive film is used for manufacturing the hollowed-out pattern according to the shapes of the upper base island and the upper pin;
902) plating a weldable metal layer on the first surface of the copper foil;
903) and removing the second photosensitive film, and etching the first surface of the copper foil to the filled resin surface.
The preparation method comprises the following steps:
1001) in step 701, a shielding film is attached to the first surface of the copper foil, and in step 704, after the shielding film on the first surface of the copper foil is removed, a second photosensitive film is covered; or covering the second surface of the copper foil in the step 701 with a first photosensitive film and covering the first surface of the copper foil in the step 704 with a second photosensitive film synchronously, carrying out the sensitization and development of the first photosensitive film to manufacture a hollowed pattern and the sensitization and development of the second photosensitive film to manufacture the hollowed pattern synchronously, pasting a shielding film outside the second photosensitive film after the first photosensitive film and the second photosensitive film are developed, and removing the shielding film after the step 703 is finished;
1002) after step 703, a carrier film is attached, and the solderable metal layer on the second side of the copper foil is attached to the carrier film.
The base island and the pins of the lead frame are fixed by the substrate, and the base island and the pins are separated into the upper part and the lower part by the substrate, so that the downward leakage of the packaging glue during packaging can be prevented, and the overflow defect of the packaging of a chip is avoided; moreover, after the encapsulation is completed, no subsequent treatment is required on the surface of the lead frame.
[ description of the drawings ]
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
Fig. 1 is a front view of a lead frame of embodiment 1 of the present invention.
Fig. 2 is a plan view of a lead frame according to embodiment 1 of the present invention.
Fig. 3 is a sectional view taken along the line a in fig. 2.
Fig. 4 is a bottom view of the lead frame of embodiment 1 of the present invention.
Fig. 5 is a cross-sectional view of a lead frame of embodiment 2 of the present invention.
Fig. 6 is a cross-sectional view of a lead frame of embodiment 3 of the present invention.
Fig. 7 is a schematic view of a process for preparing a substrate, a lower base island and a lower lead in embodiment 4 of the present invention.
Fig. 8 is a schematic flow chart of forming the upper base island and the upper lead by the acid etching method in embodiment 4 of the present invention.
Fig. 9 is a schematic flow chart of forming the upper base island and the upper lead by the alkaline etching method in embodiment 4 of the present invention.
[ detailed description of the invention ]
The structure of the lead frame of embodiment 1 of the present invention is shown in fig. 1 to 4, and includes a substrate 10 made of electrophoretic resin, a base island 20, and a plurality of leads 30 arranged around the periphery of the base island 20, and the material of the base island 20 and the lead 30 is copper, steel, or other metals.
The base island 20 includes an upper base island 21 disposed above the substrate 10, a lower base island 23 disposed below the substrate 10, and a metal island 22 penetrating the substrate 10 and connecting the upper base island 21 and the lower base island 23.
The leads 30 include an upper lead 31 disposed above the substrate 10, a lower lead 33 disposed below the substrate 10, and a metal post 32 penetrating the substrate 10 and connecting the upper lead 31 and the lower lead 33.
The top surface of the upper base island 21 is plated with a solderable metal layer 24 and the top surface of the upper lead 31 is plated with a solderable metal layer 34, which may be a single layer or a composite of multiple layers of one of gold, silver, nickel, copper, tin, or a tin alloy. The bottom surface of the metal island 22 is flush with the bottom surface 11 of the substrate 10, the bottom surface of the metal island 22 is plated with a solderable metal layer 25, and the solderable metal layer 25 on the bottom surface of the metal island 22 protrudes downward from the bottom surface of the substrate 10 to form a lower base island 23 of the present embodiment. The bottom surfaces of the metal posts 32 are flush with the bottom surface 11 of the substrate 10, the bottom surfaces of the metal posts 32 are plated with the solderable metal layers 35, and the solderable metal layers 35 on the bottom surfaces of the metal posts 32 protrude downward from the bottom surface 11 of the substrate 10 to form the lower leads 33 of this embodiment.
The solderable metal layer 24 on the top surface of upper base island 21 has a lateral dimension greater than the lateral dimension of the body of upper base island 21 and the solderable metal layer 34 forming the top surface of upper lead 31 has a lateral dimension greater than the lateral dimension of the body of upper lead 31 and also forms a mushroom head.
The structure of the lead frame of embodiment 2 of the present invention is shown in fig. 5, and the lead frame of embodiment 2 is different from the lead frame of embodiment 1 only in that 1) the lead frame includes a layer of carrier film 40, the bottom surfaces of the lower pins 33 are attached to the carrier film 40, the carrier film 40 is used to improve the physical rigidity of the workpiece and prevent the whole workpiece from wrinkling, and the carrier film 40 may be a plastic film covered with glue or a metal film covered with glue. 2) The side surface of the upper base island 21 is provided with a weldable metal layer (or browning layer and blackening layer) 26, the side surface of the upper pin 31 is provided with a weldable metal layer (or browning layer and blackening layer) 36, and the browning layer or the blackening layer is used for improving the bonding force between the pouring sealant and the base island or the pin during packaging and improving the air tightness of the packaging body.
As shown in fig. 6, the lead frame of embodiment 3 of the present invention is different from the lead frame of embodiment 1 only in that the shape of the main body of the upper base island 21 is different from the shape of the lower base island 23 (25). The shape of the body of the upper lead 31 is different from the shape of the lower leads 33 (35).
The manufacturing method of the lead frame in the embodiment 4 of the invention comprises the following steps:
the first manufacturing process of the substrate, the lower base island and the lower pin is shown in fig. 7:
101) the shielding film 09 is attached to the top surface of the copper foil 01, the bottom surface of the copper foil 01 is covered with the photosensitive film 02, and the photosensitive film 02 is pressed into the areas except the base island and the lower pins to manufacture the hollowed-out pattern 021.
102) The bottom surface of the copper foil 01 is etched to a depth corresponding to the thickness of the substrate, a groove 011 is formed on the bottom surface of the copper foil 01, electrophoretic resin 03 is filled in the groove 011 to serve as the substrate, and the electrophoretic resin 03 is filled to be flush with the bottom surface of the copper foil 01.
103) And removing the photosensitive film 02, and plating a weldable metal layer 04 on the bottom surface of the copper foil 01 to form a lower base island and a lower pin of the lead frame, so that the preparation of the substrate, the lower base island and the lower pin is completed.
104) The solderable metal layer on the bottom surface of the copper foil 01 is attached to the carrier film 06.
On the basis of completing the substrate, the lower base island and the lower lead, the upper base island and the upper lead on the substrate may be prepared by an acid etching method or an alkali etching method.
Second, the process of forming the upper base island and the upper lead above the substrate by using the acid etching method is shown in fig. 8:
201) and removing the shielding film 09 on the top surface of the copper foil 01, covering the photosensitive film 05 on the top surface of the copper foil 01, and manufacturing a hollowed-out pattern 051 by the photosensitive film 05 according to the areas except the upper base island and the upper pins.
202) The body of the upper base island and the body of the upper pin are formed by etching on top of the copper foil 01 to the top surface of the filled resin 03.
203) And removing the photosensitive film 05, plating a weldable metal layer on the top of the copper foil 01, and plating a weldable metal layer 07 on the top surface and the side surface of the main body of the upper base island and the top surface and the side surface of the main body of the upper pin respectively.
The process of forming the upper base island and the upper lead above the substrate by using the alkaline etching method is shown in fig. 9:
301) and removing the shielding film 09 on the top surface of the copper foil 01, covering the photosensitive film 05 on the top surface of the copper foil 01, and manufacturing a hollowed-out pattern 052 by using the photosensitive film 05 according to the shapes of the upper base island and the upper pin.
302) A solderable metal layer 07 is plated on the top surface of the copper foil 01 to form the top surfaces of the upper base island and the upper lead.
303) The photosensitive film 05 is removed and etched on top of the copper foil 01 to the top surface of the filled electrophoretic resin 03 to form an upper base island and an upper pin.
The manufacturing method of the lead frame in embodiment 5 of the present invention is different from embodiment 4 in that, in step 101, the top surface of the copper foil 01 is covered with the photosensitive film 05, the bottom surface of the copper foil 01 is covered with the photosensitive film 02, the photosensitive film 02 is subjected to photosensitive processing, the developing processing is performed to form the hollowed-out pattern, the photosensitive film 05 is subjected to photosensitive processing, the developing processing is performed to form the hollowed-out pattern, after the photosensitive film 02 and the photosensitive film 05 are developed, the shielding film 09 is attached to the outer surface of the photosensitive film 05, the shielding film 09 is removed after step 103 is completed, and step 201 and step 301 may be eliminated. Example 5 has the advantages that in step 101, the two sides of the copper foil 01 are simultaneously pasted with the photosensitive films, the photosensitive films on the two sides are simultaneously exposed and developed, at this time, the size of the copper foil is relatively stable, the deformation is small, the positioning accuracy of the upper and lower photosensitive films is high, and compared with example 4, the positioning accuracy of the photosensitive films is not easily affected by the expansion and contraction deformation of the materials in the processing process.
The base island and the pins of the lead frame are fixed by the substrate, and metal connecting ribs are not needed for connecting the base island and the pins. The electrophoretic resin substrate isolates the upper base island from the lower base island, the influence of chemical liquid medicine on the bottom of the lead frame can be isolated in the production process of the upper pin and the lower pin, the packaging glue cannot permeate from the upper part of the substrate to the lower part of the substrate during packaging and glue pouring, the glue overflow defect cannot be generated, and the post-treatment process after packaging and injection molding can be reduced; the substrate can strengthen the firmness of combination between the base island and the pins, and metal connecting ribs are not needed any more, so that the service life of the cutting knife is prolonged, and the cutting speed is increased. The upper base island, the lower base island and the upper pin which are separated from the substrate have freely-set shape distribution, and the T-shaped structures of the mushroom heads of the upper base island and the upper pin improve the bonding force of the packaged packaging resin with the upper base island and the upper pin and improve the air tightness of the packaging structure.
Claims (10)
1. A lead frame for chip packaging comprises a substrate, a base island and a plurality of pins arranged around the periphery of the base island, and is characterized in that the base island comprises an upper base island arranged above the substrate, a lower base island arranged below the substrate, a metal island penetrating through the substrate and connecting the upper base island with the lower base island, and the pins comprise an upper pin arranged above the substrate, a lower pin arranged below the substrate, a metal column penetrating through the substrate and connecting the upper pin with the lower pin.
2. The lead frame according to claim 1, comprising a carrier film, wherein the bottom surface of the lower pin is attached to the carrier film; the top surface of the upper base island and the top surface of the upper pin respectively comprise a weldable metal layer; the bottom surfaces of the metal pillars and the bottom surfaces of the metal islands each include a solderable metal layer.
3. The lead frame of claim 2, wherein the solderable metal layer on the top surface of the upper island has a lateral dimension greater than the lateral dimension of the upper island body to form a mushroom head, and the solderable metal layer on the top surface of the upper lead has a lateral dimension greater than the lateral dimension of the upper lead body to form a mushroom head; the bottom surfaces of the metal posts and the metal island are flush with the bottom surface of the substrate, the weldable metal layer on the bottom surface of the metal island forms the lower base island, and the weldable metal layer on the bottom surface of the metal posts forms the lower pin.
4. The lead frame of claim 2, wherein the side of the upper base island and the side of the upper lead each comprise a browning layer, a blackening layer, or a solderable metal layer.
5. The lead frame according to claim 2, wherein the upper base island body has a shape different from that of the lower base island; the upper lead body has a shape different from that of the lower lead.
6. The lead frame according to claim 2, wherein the substrate is an electrophoretic resin substrate, the main material of the base island and the lead is copper or steel, and the solderable metal layer is a single layer or a composite layer of a plurality of gold, silver, nickel, copper, tin or tin alloy.
7. A method of making the lead frame of claim 1, comprising the steps of:
701) the second surface of the copper foil covers a first photosensitive film, and the first photosensitive film presses down the base island and the region except the lower pin to manufacture a hollowed-out pattern;
702) etching the second surface of the copper foil to a depth equivalent to the thickness of the substrate, forming a groove on the second surface of the copper foil, and filling resin in the groove to serve as the substrate;
703) removing the first photosensitive film, and electroplating a weldable metal layer on the second surface of the copper foil;
704) and forming an upper base island and an upper pin above the substrate by adopting an acid etching method or an alkaline etching method, wherein the step of covering a second photosensitive film on the first surface of the copper foil is included, and a hollowed-out pattern is manufactured on the second photosensitive film.
8. The method of claim 7, wherein the step 704 of forming the upper base island and the upper lead by acid etching comprises the steps of:
801) the second photosensitive film is used for manufacturing the hollowed-out pattern according to the area except the upper base island and the upper pin;
802) etching the first surface of the copper foil to the filled resin surface;
803) and removing the second photosensitive film, and plating a weldable metal layer on the first surface of the copper foil.
9. The method of claim 7, wherein the step 704 of alkaline etching to form the upper base island and the upper lead comprises the steps of:
901) the second photosensitive film is used for manufacturing the hollowed-out pattern according to the shapes of the upper base island and the upper pin;
902) plating a weldable metal layer on the first surface of the copper foil;
903) and removing the second photosensitive film, and etching the first surface of the copper foil to the filled resin surface.
10. The method of claim 7, comprising the steps of:
1001) in step 701, a shielding film is attached to the first surface of the copper foil, and in step 704, after the shielding film on the first surface of the copper foil is removed, a second photosensitive film is covered; or covering the second surface of the copper foil in the step 701 with a first photosensitive film and covering the first surface of the copper foil in the step 704 with a second photosensitive film synchronously, carrying out the sensitization and development of the first photosensitive film to manufacture a hollowed pattern and the sensitization and development of the second photosensitive film to manufacture the hollowed pattern synchronously, pasting a shielding film outside the second photosensitive film after the first photosensitive film and the second photosensitive film are developed, and removing the shielding film after the step 703 is finished;
1002) after step 703, a carrier film is attached, and the solderable metal layer on the second side of the copper foil is attached to the carrier film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010538887.5A CN111668183A (en) | 2020-06-13 | 2020-06-13 | Lead frame for chip packaging and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010538887.5A CN111668183A (en) | 2020-06-13 | 2020-06-13 | Lead frame for chip packaging and preparation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111668183A true CN111668183A (en) | 2020-09-15 |
Family
ID=72387448
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010538887.5A Pending CN111668183A (en) | 2020-06-13 | 2020-06-13 | Lead frame for chip packaging and preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111668183A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113113321A (en) * | 2021-03-26 | 2021-07-13 | 昆山弗莱吉电子科技有限公司 | Semiconductor high-density lead frame and manufacturing process thereof |
-
2020
- 2020-06-13 CN CN202010538887.5A patent/CN111668183A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113113321A (en) * | 2021-03-26 | 2021-07-13 | 昆山弗莱吉电子科技有限公司 | Semiconductor high-density lead frame and manufacturing process thereof |
| CN113113321B (en) * | 2021-03-26 | 2022-02-11 | 昆山弗莱吉电子科技有限公司 | Semiconductor high-density lead frame and manufacturing process thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100385641C (en) | Semiconductor packaging with partially patterned lead frames and its making methods | |
| US5635671A (en) | Mold runner removal from a substrate-based packaged electronic device | |
| CN102324413B (en) | Sequentially etched and plated lead frame structure with island prepacked plastic sealed material and producing method thereof | |
| US20020192863A1 (en) | Multimedia chip package | |
| CN102324412B (en) | Island-free lead frame structure prefilled with plastic encapsulating material, plated firstly and etched later and production method thereof | |
| CN205609512U (en) | Semiconductor package | |
| JPH09252065A (en) | Semiconductor device, manufacture thereof, and board frame | |
| CN102324415B (en) | Sequentially etched and plated lead frame structure without island prepacked plastic sealed material and producing method thereof | |
| TW201225187A (en) | Non-leaded package structure and manufacturing method thereof | |
| US6511864B2 (en) | Method of fabricating semiconductor device | |
| US20160013122A1 (en) | Methods of fabricating qfn semiconductor package and metal plate | |
| CN102324414B (en) | Sequentially etched and plated lead frame structure with island prepacked plastic sealed material and producing method thereof | |
| CN111668183A (en) | Lead frame for chip packaging and preparation method | |
| KR101674537B1 (en) | Leadframe, method of manufacturing the same and semiconductor package, method of manufacturing the same | |
| CN1855450A (en) | High-heat loss rate semiconductor sealer and its production | |
| CN212277188U (en) | Lead frame for chip packaging | |
| CN213519935U (en) | Lead frame for chip packaging and chip packaging structure | |
| TW451365B (en) | Semiconductor package with dual chips | |
| JP2003197663A (en) | Semiconductor device and its manufacturing method, circuit board, and electronic instrument | |
| CN113471155A (en) | Packaging process of packaging structure with pre-etched back surface | |
| US11088054B2 (en) | Lead frame and method for manufacturing the same | |
| CN112366197A (en) | Lead frame for chip packaging, preparation method and chip packaging structure | |
| CN100411121C (en) | Radiating pack structure and production thereof | |
| CN102931165B (en) | The manufacture method of base plate for packaging | |
| CN107658286B (en) | Substrate for mounting semiconductor element, semiconductor device, and method for manufacturing semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: No.7, no.9-1, no.9-2, no.9-3, Xinfa 2nd Road, Xinqiao community, Baoan District, Shenzhen City, Guangdong Province Applicant after: Shenzhen Dinghua Xintai Technology Co.,Ltd. Address before: No. 9, Xinfa 2nd Road, Xinqiao community, Xinqiao street, Bao'an District, Shenzhen City, Guangdong Province Applicant before: ACCELERATED PRINTED CIRCUIT BOARD Co.,Ltd. |