CN111668088A - Processing method of silicon carbide substrate - Google Patents
Processing method of silicon carbide substrate Download PDFInfo
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- CN111668088A CN111668088A CN202010345960.7A CN202010345960A CN111668088A CN 111668088 A CN111668088 A CN 111668088A CN 202010345960 A CN202010345960 A CN 202010345960A CN 111668088 A CN111668088 A CN 111668088A
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 147
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 146
- 239000000758 substrate Substances 0.000 title claims abstract description 125
- 238000003672 processing method Methods 0.000 title description 4
- 239000007789 gas Substances 0.000 claims abstract description 81
- 238000000137 annealing Methods 0.000 claims abstract description 53
- 238000000034 method Methods 0.000 claims abstract description 31
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 27
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 10
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 10
- 239000001301 oxygen Substances 0.000 claims abstract description 10
- 230000003647 oxidation Effects 0.000 claims description 39
- 238000007254 oxidation reaction Methods 0.000 claims description 39
- 238000010438 heat treatment Methods 0.000 claims description 25
- 125000002743 phosphorus functional group Chemical group 0.000 claims description 19
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 14
- 238000009832 plasma treatment Methods 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 4
- 229910019213 POCl3 Inorganic materials 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl chloride Substances ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 7
- 239000012535 impurity Substances 0.000 abstract description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 5
- 239000011574 phosphorus Substances 0.000 abstract description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052799 carbon Inorganic materials 0.000 abstract description 3
- 230000007547 defect Effects 0.000 abstract description 3
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 125000004437 phosphorous atom Chemical group 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- 229910001868 water Inorganic materials 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000004590 computer program Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000002161 passivation Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 238000009835 boiling Methods 0.000 description 2
- 238000011010 flushing procedure Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 238000009279 wet oxidation reaction Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010668 complexation reaction Methods 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/0231—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to electromagnetic radiation, e.g. UV light
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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Abstract
The invention provides a method for processing a silicon carbide substrate, which comprises the steps of passivating the silicon carbide substrate through plasma processing equipment; annealing the passivated silicon carbide substrate at high temperature by using an annealing furnace; growing an oxide layer on the surface of the silicon carbide substrate after high-temperature annealing; the high-temperature annealing is carried out on the silicon carbide substrate, so that the surface appearance of the silicon carbide substrate can be improved, the introduction of impurities at the interface of the silicon carbide substrate and an oxide layer is reduced, the introduction of new impurities in the annealing process is avoided, the defects in the oxide layer are reduced, the quality of the oxide layer is improved, and meanwhile, the junction depth of phosphorus atom diffusion can be accurately controlled through temperature and time; according to the invention, residual carbon on the surface of the silicon carbide substrate is eliminated by oxygen plasma in oxygen family gas, and the surface of the silicon carbide substrate is passivated by nitrogen plasma in nitrogen family gas and phosphorus plasma in phosphorus family gas, so that interface state density is greatly reduced.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for processing a silicon carbide substrate.
Background
In recent years, according to the statistical data analysis of power devices in China, the market scale of high-voltage silicon carbide power devices is greatly increased year by year, the main market applications of the silicon carbide devices comprise photovoltaic devices, power supplies, uninterruptible power supplies, electric/hybrid vehicles, wind power generation, rail transit, motor driving, charging piles and the like, and silicon carbide materials are expected to gradually replace the silicon devices in power electronic devices due to the characteristics of wide forbidden bands, high critical breakdown field strengths and the like of the silicon carbide materials so as to improve the working efficiency of the existing power electronic equipment.
The silicon carbide (SiC) has incomparable advantages in the aspects of forbidden band width, maximum field intensity, doping concentration and thermal conductivity compared with the traditional silicon and arsenide, and is particularly suitable for the technical fields of high voltage, high frequency, high power, high irradiation and photoelectric detection of certain wavelengths. Therefore, silicon carbide materials have received much attention from researchers in power microwave as well as optoelectronic devices.
In the preparation process of the silicon carbide power device, a high-temperature oxidation process is one of core processes for determining the performance of the silicon carbide power device, the silicon carbide has own advantages compared with other wide bandgap semiconductors such as a nitride graft, and the silicon carbide generates an oxide film through a thermal oxidation process without introducing other impurity elements, so that the silicon carbide is easily compatible with the preparation process of the silicon power device.
At present, the treatment of the silicon carbide is to grow an oxide layer, then the silicon carbide containing the oxide layer is annealed in a nitrogen atmosphere, and the interface state density between the silicon carbide and the oxide layer is high, so that the electron mobility of an inversion channel of a silicon carbide power device is low, and the performance of the silicon carbide power device is seriously influenced.
Disclosure of Invention
In order to overcome the defect of high interface state density between silicon carbide and an oxide layer in the prior art, the invention provides a method for processing a silicon carbide substrate, which comprises the following steps:
passivating the silicon carbide substrate by plasma processing equipment;
annealing the passivated silicon carbide substrate at high temperature by using an annealing furnace;
and growing an oxide layer on the surface of the silicon carbide substrate after high-temperature annealing.
The passivating the silicon carbide substrate by plasma comprises:
cleaning the silicon carbide substrate by adopting an RCA standard;
passivating the silicon carbide substrate with a plasma processing apparatus based on one or more of an oxygen group gas, a nitrogen group gas, and/or a phosphorus group gas.
Passivating the silicon carbide substrate with a plasma processing apparatus, comprising:
when oxygen group gas is adopted, putting the silicon carbide substrate into plasma processing equipment, and vacuumizing the plasma processing equipment;
adjusting the internal temperature of the plasma treatment equipment to 200-400 ℃, then adjusting the power of the plasma treatment equipment to 10-1000W, and then introducing oxygen family gas at the flow rate of 10-1000 SCCM for 1s-5 min.
Passivating the silicon carbide substrate with a plasma processing apparatus, comprising:
when the nitrogen family gas is adopted, putting the silicon carbide substrate into plasma processing equipment, and vacuumizing the plasma processing equipment;
adjusting the internal temperature of the plasma treatment equipment to 200-400 ℃, then adjusting the power of the plasma treatment equipment to 10-1000W, then introducing nitrogen group gas at the flow rate of 10-1000 SCCM, and maintaining for 1s-5 min.
Passivating the silicon carbide substrate with a plasma processing apparatus, comprising:
when phosphorus group gas is adopted, putting the silicon carbide substrate into plasma processing equipment, and vacuumizing the plasma processing equipment;
adjusting the internal temperature of the plasma treatment equipment to 200-400 ℃, then adjusting the power of the plasma treatment equipment to 10-1000W, then introducing phosphorus group gas at the flow rate of 10-2000 SCCM, and maintaining for 1s-5 min.
The method for carrying out high-temperature annealing on the passivated silicon carbide substrate by adopting the annealing furnace comprises the following steps:
putting the passivated silicon carbide substrate into an annealing furnace, and vacuumizing the annealing furnace to 1-30 torr;
the internal temperature of the annealing furnace is raised to 800-1000 ℃ at the heating rate of 10-200 ℃/min, and then H is introduced at the flow rate of 5-60 SCCM2Maintaining for 2-20 min;
introduction of H2Meanwhile, continuously introducing HCL with 20-200 SCCM for 0.5-5 min;
the internal temperature of the vacuum annealing furnace was lowered to room temperature.
Growing an oxide layer on the surface of the silicon carbide substrate after high-temperature annealing, wherein the oxide layer comprises the following components:
putting the silicon carbide substrate after high-temperature annealing into an oxidation furnace, raising the internal temperature of the oxidation furnace to 900-1200 ℃ at a heating rate of 10-200 ℃/min, and introducing O at a flow rate of 1-10 SLM2NO and/or N2O；
Raising the internal temperature of the oxidation furnace to 1200-1500 ℃ at a heating rate of 10-200 ℃/min, maintaining for 1-5 h, and stopping introducing O2NO and/or N2And O, obtaining an oxide layer.
The oxide layer grows on the surface of the silicon carbide substrate after high-temperature annealing, and the oxide layer comprises:
putting the silicon carbide substrate after high-temperature annealing into an oxidation furnace, raising the internal temperature of the oxidation furnace to 900-1200 ℃ at a heating rate of 10-200 ℃/min, and introducing H at a flow rate of 1-10 SLM2And O2；
Raising the internal temperature of the oxidation furnace to 1200-1500 ℃ at a heating rate of 10-200 ℃/min, maintaining for 1-5H, and stopping introducing H2And O2And obtaining an oxide layer.
Growing an oxide layer on the surface of the silicon carbide substrate after high-temperature annealing, wherein the oxide layer comprises the following components:
putting the silicon carbide substrate after high-temperature annealing into an oxidation furnace, raising the internal temperature of the oxidation furnace to 900-1200 ℃ at a heating rate of 10-200 ℃/min, and introducing O at a flow rate of 1-10 SLM2NO and/or N2O；
Raising the internal temperature of the oxidation furnace to 1200-1500 ℃ at a heating rate of 10-200 ℃/min, maintaining for 1-5 h, and stopping introducing O2NO and/or N2O；
Maintaining the internal temperature of the oxidation furnace, and introducing H at the flow rate of 1SLM-10SLM2And O2Maintaining for 1min-5H, and stopping introducing H2And O2And obtaining an oxide layer.
The oxygen group gas comprises O2And/or O3；
The nitrogen familyThe gas comprising N2O、NO、NH3And N2One or more of;
the phosphorus group gas comprises PH3、POCl3One or more of TBP and TMP.
The thickness of the oxide layer is 2nm-50 nm.
The silicon carbide substrate is an N-type silicon carbide substrate or a P-type silicon carbide substrate;
the ion doping concentration of the silicon carbide substrate is 1 × 1013～1021cm-3The thickness of the film is 0.1-500 mu m.
The technical scheme provided by the invention has the following beneficial effects:
according to the processing method of the silicon carbide substrate, the silicon carbide substrate is passivated through plasma processing equipment; annealing the passivated silicon carbide substrate at high temperature by using an annealing furnace; an oxide layer grows on the surface of the silicon carbide substrate after high-temperature annealing, so that the interface state density between the silicon carbide and the oxide layer is greatly reduced, and residual carbon on the surface of the silicon carbide substrate is eliminated;
according to the technical scheme provided by the invention, the high-temperature annealing is carried out on the silicon carbide substrate, so that the surface appearance of the silicon carbide substrate can be improved, the introduction of impurities at the interface of the silicon carbide substrate and an oxide layer is reduced, the introduction of new impurities in the annealing process is avoided, the defects in the oxide layer are reduced, the quality of the oxide layer is improved, and meanwhile, the junction depth of phosphorus atom diffusion can be accurately controlled through temperature and time;
according to the invention, residual carbon on the surface of the silicon carbide substrate is eliminated by oxygen plasma in oxygen family gas, and the surface of the silicon carbide substrate is passivated by nitrogen plasma in nitrogen family gas and phosphorus plasma in phosphorus family gas, so that interface state density is greatly reduced.
Drawings
Fig. 1 is a flowchart of a method of processing a silicon carbide substrate in an embodiment of the invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings.
The embodiment of the invention provides a processing method of a silicon carbide substrate, a specific flow chart is shown as figure 1, and the specific process is as follows:
s101: passivating the silicon carbide substrate by using plasma processing equipment;
s102: annealing the passivated silicon carbide substrate at high temperature by using an annealing furnace;
s103: and growing an oxide layer on the surface of the silicon carbide substrate after high-temperature annealing.
The silicon carbide substrate processed in the embodiment of the invention is an N-type silicon carbide substrate or a P-type silicon carbide substrate, and the ion doping concentration of the silicon carbide substrate is 1 × 1013～1021cm-3The thickness of the silicon carbide substrate is 0.1-500 mu m, in the embodiment of the invention, the thickness of the selected silicon carbide substrate is 360 mu m, the material of the silicon carbide substrate is an n-type SiC epitaxial material, and the doping concentration of the silicon carbide substrate is 1 × 1018cm-3。
Passivating a silicon carbide substrate with a plasma, comprising:
the silicon carbide substrate is cleaned by adopting RCA standard, and the specific cleaning process is as follows:
(1) preparing a hydrofluoric acid solution (HF: H2O-1: 10);
(2) cleaning and drying the sample bracket for later use;
(3) placing the silicon carbide samples on a support, and placing the silicon carbide samples in sequence;
(4) preparing a 3# solution (sulfuric acid: H2O2 ═ 3:1), adding the sulfuric acid at last, and boiling water in another container at the same time;
(5) boiling and washing with No. 3 liquid for 15min, heating to 250 deg.C, and lifting the support for a little cool moment;
(6) putting the bracket into hot water, and flushing;
(7) preparing a solution 1 (ammonia water: H2O 2: H2O: 1:5-1:1:7), pouring the two solutions into hot water, heating to 75-85 ℃,
the time is 10-20 min (removing heavy metal impurities by utilizing complexation), the sample support is taken out, the No. 1 solution is put into the sample support for 15min, the sample support is taken out and put into hot water, and the sample support is flushed with water;
(8) pouring the two into hot water before preparing a No. 2 solution (HCl: H2O 2: H2O: 1: 5);
(9) taking out the silicon wafer, putting the silicon wafer into the No. 2 liquid, taking out the silicon wafer from the heat release water for 15min, and flushing the silicon wafer;
(10) 1% hydrofluoric acid for 5-120 s, and removing the oxide layer on the surface of the silicon carbide sample;
(11) and (4) washing with deionized water for 20min, wherein the surface after ultrasonic treatment is provided with hydroxyl.
Passivating the silicon carbide substrate by adopting plasma processing equipment based on one or more of oxygen group gas, nitrogen group gas and phosphorus group gas, namely, passivating the silicon carbide substrate by selecting any one of the three gases of the oxygen group gas, the nitrogen group gas and the phosphorus group gas, or passivating the silicon carbide substrate by adopting any two or three gases of the oxygen group gas, the nitrogen group gas and the phosphorus group gas, when adopting the two gases of the oxygen group gas and the nitrogen group gas, passivating the silicon carbide substrate based on the oxygen group gas firstly, and then passivating the silicon carbide substrate based on the nitrogen group gas; when two gases of oxygen group gas and phosphorus group gas are adopted, firstly passivating the silicon carbide substrate based on the oxygen group gas, and then passivating the silicon carbide substrate based on the phosphorus group gas; when two gases of nitrogen group gas and phosphorus group gas are adopted, firstly, the silicon carbide substrate is passivated based on the nitrogen group gas, and then, the silicon carbide substrate is passivated based on the phosphorus group gas; when three gases of oxygen group gas, nitrogen group gas and phosphorus group gas are adopted, the silicon carbide substrate is passivated based on the oxygen group gas, then the silicon carbide substrate is passivated based on the nitrogen group gas, and finally the silicon carbide substrate is passivated based on the phosphorus group gas.
Specifically, the passivation of a silicon carbide substrate by a plasma processing apparatus includes:
when oxygen group gas is adopted, the silicon carbide substrate is placed into plasma processing equipment, the plasma processing equipment is vacuumized, and the vacuum degree of the plasma processing equipment after vacuumization is 8torr in the embodiment of the invention;
adjusting the internal temperature of the plasma processing equipment to 200-400 ℃, then adjusting the power of the plasma processing equipment to 10-1000W, then introducing oxygen family gas at the flow rate of 10-1000 SCCM, and maintaining for 1s-5min, wherein in the embodiment of the invention, the internal temperature of the plasma processing equipment is adjusted to 250 ℃, the power of the plasma processing equipment is adjusted to 800W, and the flow rate of the introduced oxygen family gas is 500 SCCM;
specifically, the passivation of a silicon carbide substrate by a plasma processing apparatus includes:
when the nitrogen family gas is adopted, the silicon carbide substrate is placed into plasma processing equipment, the plasma processing equipment is vacuumized, and the vacuum degree of the plasma processing equipment after the vacuum pumping is 6 torr;
adjusting the internal temperature of the plasma processing equipment to 200-400 ℃, then adjusting the power of the plasma processing equipment to 10-1000W, then introducing nitrogen family gas at the flow of 10-1000 SCCM, and maintaining for 1s-5min, wherein in the embodiment of the invention, the internal temperature of the plasma processing equipment is adjusted to 250 ℃, the power of the plasma processing equipment is adjusted to 600W, and the flow of introduced oxygen family gas is 1000 SCCM;
specifically, the passivation of a silicon carbide substrate by a plasma processing apparatus includes:
when phosphorus group gas is adopted, the silicon carbide substrate is placed into plasma processing equipment, the plasma processing equipment is vacuumized, and the vacuum degree of the plasma processing equipment after vacuumization is 1-10 torr in the embodiment of the invention;
adjusting the internal temperature of the plasma processing equipment to 200-400 ℃, then adjusting the power of the plasma processing equipment to 10-1000W, then introducing phosphorus family gas at the flow rate of 10-2000 SCCM, and maintaining for 1s-5min, wherein in the embodiment of the invention, the internal temperature of the plasma processing equipment is adjusted to 250 ℃, the power of the plasma processing equipment is adjusted to 700W, and the flow rate of the introduced oxygen family gas is 1500 SCCM;
the oxygen group gas comprises O2And/or O3(ii) a The nitrogen group gas including N2O、NO、NH3And N2One or more of; the phosphorus group gas includes PH3、POCl3One or more of TBP and TMP.
And (3) carrying out high-temperature annealing on the passivated silicon carbide substrate by adopting an annealing furnace, wherein the annealing furnace comprises the following steps:
putting the passivated silicon carbide substrate into an annealing furnace, and vacuumizing the annealing furnace to 1-30 torr, wherein the vacuum degree of the vacuumizing annealing furnace is 15torr in the embodiment of the invention;
the internal temperature of the annealing furnace is raised to 800-1000 ℃ at the heating rate of 10-200 ℃/min, and then H is introduced at the flow rate of 5-60 SCCM2Maintaining for 2-20 min; in the embodiment of the invention, the internal temperature of the annealing furnace is raised to 850 ℃ H2The inlet flow rate of (2) is 40SCCM, H2The introduction time of (2) is 10 min;
introduction of H2Meanwhile, continuously introducing HCL with 20-200 SCCM for 0.5-5 min, and introducing H when the HCL gas is introduced for 0.5min2The total time of (3) is 2min, and when the time of introducing HCL gas is 5min, H is introduced correspondingly2The total time of (2) is 20 min. In the embodiment of the invention, the flow rate of introducing the HCL gas is 30SCCM, and the time of introducing the HCL gas is 3 min.
Finally, the internal temperature of the annealing furnace was lowered to room temperature.
Growing an oxide layer on the surface of the silicon carbide substrate after high-temperature annealing, specifically as follows:
1. growing an oxide layer on the surface of the silicon carbide substrate by a dry oxidation process, comprising:
putting the silicon carbide substrate into an oxidation furnace, raising the internal temperature of the oxidation furnace to 900-1200 ℃ at a heating rate of 10-200 ℃/min, and introducing O at a flow rate of 1-10 SLM2NO and/or N2O; in the embodiment of the invention, the temperature rise rate of 20 ℃/min is selected to raise the internal temperature of the oxidation furnace to 1000 ℃, and the introduced gas is N2O；
Raising the internal temperature of the oxidation furnace to 1200-1500 ℃ at a heating rate of 10-200 ℃/min, maintaining for 1-5 h, and stopping introducing O2NO and/or N2And O, obtaining an oxide layer, wherein in the embodiment of the invention, the internal temperature of the oxidation furnace is increased to 1300 ℃ at the heating rate of 50 ℃/min, and the thickness of the obtained oxide layer is 20 nm.
2. Growing an oxide layer on the surface of the silicon carbide substrate by a wet oxidation process, comprising:
putting the silicon carbide substrate into an oxidation furnace, raising the internal temperature of the oxidation furnace to 900-1200 ℃ at a heating rate of 10-200 ℃/min, and introducing H at a flow rate of 1-10 SLM2And O2；
Raising the internal temperature of the oxidation furnace to 1200-1500 ℃ at a heating rate of 10-200 ℃/min, maintaining for 1-5H, and stopping introducing H2And O2And obtaining an oxide layer.
3. Growing an oxide layer on the surface of the silicon carbide substrate by a dry oxidation process and a wet oxidation process, comprising:
putting the silicon carbide substrate into an oxidation furnace, raising the internal temperature of the oxidation furnace to 900-1200 ℃ at a heating rate of 10-200 ℃/min, and introducing O at a flow rate of 1-10 SLM2NO and/or N2O; in the embodiment of the invention, the temperature rise rate of 20 ℃/min is selected to raise the internal temperature of the oxidation furnace to 1000 ℃, and the introduced gas is N2O；
Raising the internal temperature of the oxidation furnace to 1200-1500 ℃ at a heating rate of 10-200 ℃/min, maintaining for 1-5 h, and stopping introducing O2NO and/or N2O；
Maintaining the internal temperature of the oxidation furnace (namely maintaining the internal temperature of the oxidation furnace at 1200-1500 ℃) and introducing H at the flow rate of 1SLM-10SLM2And O2Maintaining for 1min-5H, and stopping introducing H2And O2And obtaining an oxide layer with the thickness of 2nm-50nm, wherein in the embodiment of the invention, the internal temperature of the oxidation furnace is increased to 1300 ℃ at the heating rate of 50 ℃/min, and the thickness of the obtained oxide layer is 20 nm.
For convenience of description, each part of the above apparatus is separately described as being functionally divided into various modules or units. Of course, the functionality of the various modules or units may be implemented in the same one or more pieces of software or hardware when implementing the present application.
As will be appreciated by one skilled in the art, embodiments of the present application may be provided as a method, system, or computer program product. Accordingly, the present application may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present application may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.
The present application is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the application. It will be understood that each flow and/or block of the flow diagrams and/or block diagrams, and combinations of flows and/or blocks in the flow diagrams and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
Finally, it should be noted that: the above embodiments are only intended to illustrate the technical solution of the present invention and not to limit the same, and a person of ordinary skill in the art can make modifications or equivalent substitutions to the specific embodiments of the present invention with reference to the above embodiments, and any modifications or equivalent substitutions which do not depart from the spirit and scope of the present invention are within the protection scope of the present invention as claimed in the appended claims.
Claims (12)
1. A method of processing a silicon carbide substrate, comprising:
passivating the silicon carbide substrate by plasma processing equipment;
annealing the passivated silicon carbide substrate at high temperature by using an annealing furnace;
and growing an oxide layer on the surface of the silicon carbide substrate after high-temperature annealing.
2. The method of processing a silicon carbide substrate according to claim 1, wherein the passivating the silicon carbide substrate by plasma comprises:
cleaning the silicon carbide substrate by adopting an RCA standard;
and passivating the silicon carbide substrate by using plasma processing equipment based on one or more of oxygen group gas, nitrogen group gas and phosphorus group gas.
3. The method of processing a silicon carbide substrate according to claim 2, wherein the passivating the silicon carbide substrate by the plasma processing apparatus comprises:
when oxygen group gas is adopted, putting the silicon carbide substrate into plasma processing equipment, and vacuumizing the plasma processing equipment;
adjusting the internal temperature of the plasma treatment equipment to 200-400 ℃, then adjusting the power of the plasma treatment equipment to 10-1000W, and then introducing oxygen family gas at the flow rate of 10-1000 SCCM for 1s-5 min.
4. The method for processing a silicon carbide substrate according to claim 3, wherein the passivating the silicon carbide substrate by the plasma processing apparatus comprises:
when the nitrogen family gas is adopted, putting the silicon carbide substrate into plasma processing equipment, and vacuumizing the plasma processing equipment;
adjusting the internal temperature of the plasma treatment equipment to 200-400 ℃, then adjusting the power of the plasma treatment equipment to 10-1000W, then introducing nitrogen group gas at the flow rate of 10-1000 SCCM, and maintaining for 1s-5 min.
5. The method for processing a silicon carbide substrate according to claim 4, wherein the passivating the silicon carbide substrate by the plasma processing apparatus comprises:
when phosphorus group gas is adopted, putting the silicon carbide substrate into plasma processing equipment, and vacuumizing the plasma processing equipment;
adjusting the internal temperature of the plasma treatment equipment to 200-400 ℃, then adjusting the power of the plasma treatment equipment to 10-1000W, then introducing phosphorus group gas at the flow rate of 10-2000 SCCM, and maintaining for 1s-5 min.
6. The method for processing the silicon carbide substrate according to claim 1, wherein the high-temperature annealing of the passivated silicon carbide substrate using the annealing furnace comprises:
putting the passivated silicon carbide substrate into an annealing furnace, and vacuumizing the annealing furnace to 1-30 torr;
the internal temperature of the annealing furnace is raised to 800-1000 ℃ at the heating rate of 10-200 ℃/min, and then H is introduced at the flow rate of 5-60 SCCM2Maintaining for 2-20 min;
introduction of H2Meanwhile, continuously introducing HCL with 20-200 SCCM for 0.5-5 min;
the internal temperature of the vacuum annealing furnace was lowered to room temperature.
7. The method for processing the silicon carbide substrate according to claim 1, wherein the growing the oxide layer on the surface of the silicon carbide substrate after the high temperature annealing comprises:
putting the silicon carbide substrate after high-temperature annealing into an oxidation furnace, raising the internal temperature of the oxidation furnace to 900-1200 ℃ at a heating rate of 10-200 ℃/min, and introducing O at a flow rate of 1-10 SLM2NO and/or N2O；
Raising the internal temperature of the oxidation furnace to 1200-1500 ℃ at a heating rate of 10-200 ℃/min, maintaining for 1-5 h, and stopping introducing O2NO and/or N2And O, obtaining an oxide layer.
8. The method for processing the silicon carbide substrate according to claim 1, wherein the growing the oxide layer on the surface of the silicon carbide substrate after the high temperature annealing comprises:
putting the silicon carbide substrate after high-temperature annealing into an oxidation furnace, raising the internal temperature of the oxidation furnace to 900-1200 ℃ at a heating rate of 10-200 ℃/min, and introducing H at a flow rate of 1-10 SLM2And O2；
Raising the internal temperature of the oxidation furnace to 1200-1500 ℃ at a heating rate of 10-200 ℃/min, maintaining for 1-5H, and stopping introducing H2And O2And obtaining an oxide layer.
9. The method for processing the silicon carbide substrate according to claim 1, wherein the growing the oxide layer on the surface of the silicon carbide substrate after the high temperature annealing comprises:
putting the silicon carbide substrate after high-temperature annealing into an oxidation furnace, raising the internal temperature of the oxidation furnace to 900-1200 ℃ at a heating rate of 10-200 ℃/min, and introducing O at a flow rate of 1-10 SLM2NO and/or N2O；
Raising the internal temperature of the oxidation furnace to 1200-1500 ℃ at a heating rate of 10-200 ℃/min, maintaining for 1-5 h, and stopping introducing O2NO and/or N2O；
Maintaining the internal temperature of the oxidation furnace, and introducing H at the flow rate of 1SLM-10SLM2And O2Maintain 1min-5H, then stopping the introduction of H2And O2And obtaining an oxide layer.
10. The method for processing a silicon carbide substrate according to claim 5, wherein the oxygen group gas comprises O2And/or O3；
The nitrogen family gas comprises N2O、NO、NH3And N2One or more of;
the phosphorus group gas comprises PH3、POCl3One or more of TBP and TMP.
11. The method for processing a silicon carbide substrate according to claim 1, wherein the oxide layer has a thickness of 2nm to 50 nm.
12. The method for processing a silicon carbide substrate according to claim 1, wherein the silicon carbide substrate is an N-type silicon carbide substrate or a P-type silicon carbide substrate;
the ion doping concentration of the silicon carbide substrate is 1 × 1013～1021cm-3The thickness of the film is 0.1-500 mu m.
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| CN113990750A (en) * | 2021-11-30 | 2022-01-28 | 电子科技大学 | Processing method of silicon carbide substrate |
| CN114188213A (en) * | 2021-12-06 | 2022-03-15 | 上海稷以科技有限公司 | Method for solving problem of transmission failure of silicon carbide wafer |
| CN114188215A (en) * | 2021-11-30 | 2022-03-15 | 电子科技大学 | Method for processing silicon carbide surface |
| CN117116747A (en) * | 2023-10-17 | 2023-11-24 | 深圳基本半导体有限公司 | Pretreatment method of silicon carbide wafer and silicon carbide wafer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113990750A (en) * | 2021-11-30 | 2022-01-28 | 电子科技大学 | Processing method of silicon carbide substrate |
| CN114188215A (en) * | 2021-11-30 | 2022-03-15 | 电子科技大学 | Method for processing silicon carbide surface |
| CN114188215B (en) * | 2021-11-30 | 2023-10-27 | 电子科技大学 | Silicon carbide surface treatment method |
| CN113990750B (en) * | 2021-11-30 | 2024-04-12 | 电子科技大学 | Method for processing silicon carbide substrate |
| CN114188213A (en) * | 2021-12-06 | 2022-03-15 | 上海稷以科技有限公司 | Method for solving problem of transmission failure of silicon carbide wafer |
| CN114188213B (en) * | 2021-12-06 | 2023-04-07 | 上海稷以科技有限公司 | Method for solving problem of transmission failure of silicon carbide wafer |
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