CN111656527B - 制造电隔离金刚石纳米线和应用 - Google Patents
制造电隔离金刚石纳米线和应用 Download PDFInfo
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- CN111656527B CN111656527B CN201880088057.8A CN201880088057A CN111656527B CN 111656527 B CN111656527 B CN 111656527B CN 201880088057 A CN201880088057 A CN 201880088057A CN 111656527 B CN111656527 B CN 111656527B
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 239
- 239000010432 diamond Substances 0.000 title claims abstract description 239
- 239000002070 nanowire Substances 0.000 title claims abstract description 146
- 238000004519 manufacturing process Methods 0.000 title abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 85
- 150000002500 ions Chemical class 0.000 claims abstract description 63
- 229920000642 polymer Polymers 0.000 claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 32
- 238000000151 deposition Methods 0.000 claims abstract description 19
- 238000005530 etching Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 55
- 230000005669 field effect Effects 0.000 claims description 20
- 238000005468 ion implantation Methods 0.000 claims description 14
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 13
- 229910052721 tungsten Inorganic materials 0.000 claims description 13
- 239000010937 tungsten Substances 0.000 claims description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 238000000231 atomic layer deposition Methods 0.000 claims description 6
- 229910052797 bismuth Inorganic materials 0.000 claims description 6
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 239000001307 helium Substances 0.000 claims description 6
- 229910052734 helium Inorganic materials 0.000 claims description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 238000005240 physical vapour deposition Methods 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000003989 dielectric material Substances 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 239000002861 polymer material Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 230000008569 process Effects 0.000 description 11
- 239000007943 implant Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000002513 implantation Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000002955 isolation Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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Abstract
一种制造电隔离金刚石纳米线的方法包括:在金刚石衬底上形成金刚石纳米线;在所述金刚石纳米线和所述金刚石衬底上沉积电介质或聚合物;将所述电介质或所述聚合物平坦化;蚀刻平坦化的所述电介质或所述聚合物的一部分以暴露所述金刚石纳米线的第一部分;沉积金属层以适形地覆盖所述金刚石纳米线的所述第一部分;以及将离子注入所述金刚石纳米线的位于所述金刚石纳米线的所述第一部分与所述金刚石衬底之间的第二部分中、或者注入所述金刚石纳米线与所述金刚石衬底的相交部;其中,所述离子被从所述金刚石纳米线的第一侧以倾斜的角度注入。
Description
相关申请的交叉引用
本申请涉及并要求2018年1月31日提交的美国临时专利申请No.62/624,474的优先权,该申请的全部内容通过引用并入本文中。本申请还涉及并要求2018年11月21日提交的美国正式专利申请No.16/198,274的优先权,该申请被同时提交并且其全部内容通过引用并入本文中。
关于联邦基金的声明
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技术领域
本文涉及用于各种电子和光子应用的金刚石纳米线。更具体地,本文至少描述了制造电隔离金刚石纳米线的方法及其在纳米线MOS场效应晶体管(MOSFET)中的应用。
背景技术
在现有技术中,可使用常规p/n结或通过在氧化物上制造半导体来隔离有源半导体器件。使用常规p/n结或在氧化物上制造半导体为有源金刚石电子器件制作隔离层面临挑战。尽管这些技术在硅和其他半导体中得到了广泛应用,但在金刚石中、尤其在选择的器件区域中制备p/n结,仍然具有挑战性。还没有合适的方案来制作电介质结构上的金刚石,如同绝缘体上的硅(SOI),以实现器件隔离。另一种现有技术方法是通过类似于碳纳米管生长的各种生长技术来生长金刚石纳米线。然而,这种方法在为了进一步制造而将纳米线精确地放置在所需区域上时也存在挑战。另一种技术是将金刚石薄膜转移到另一衬底,以制作纳米线器件;然而,这是一种复杂的方法,并不适合大规模生产。
T.M.Babinec,J.M.HausmannBirgit,M.Khan,Y.Zhang,J.R.Maze,P.R.Hemmer等,“金刚石纳米线单光子源”(A diamond nanowire single-photon source),Nat Nano,第5卷,195-199页,03//2010年印刷和2013年4月9日授权的美国专利No.8,415,640,通过引用并入本文中,使用微加工技术来制造垂直纳米线。导线与衬底没有电隔离,电子和空穴(如果存在)可以自由移动。因此,单独的导线没有相互隔离。
2015年12月1日授权的美国专利No.9,200,378,通过引用并入本文中,描述了通过化学气相沉积生长金刚石纳米线。然而,这种方法不适用于大规模半导体器件的制造。
需要的是,一种用于制造各种电子和光子应用的金刚石纳米线的改进方法。本文的实施例解决了这些和其他需求。
发明内容
在本文公开的第一实施例中,一种用于制造电隔离金刚石纳米线的方法包括:在金刚石衬底上形成金刚石纳米线;在所述金刚石纳米线和所述金刚石衬底上沉积电介质或聚合物;将所述电介质或所述聚合物平坦化;蚀刻平坦化的所述电介质或所述聚合物的一部分以暴露所述金刚石纳米线的第一部分;沉积金属层以适形地覆盖所述金刚石纳米线的所述第一部分;以及将离子注入所述金刚石纳米线的位于所述金刚石纳米线的所述第一部分与所述金刚石衬底之间的第二部分中、或者注入所述金刚石纳米线与所述金刚石衬底的相交部;其中,所述离子被从所述金刚石纳米线的第一侧以倾斜的角度注入。
在本文公开的另一实施例中,一种电隔离金刚石纳米线包括:金刚石衬底;在所述金刚石衬底上的金刚石纳米线;以及多个离子,注入在所述金刚石纳米线的顶部下方的所述金刚石纳米线中、或者注入所述金刚石纳米线与所述金刚石衬底的相交部。
在本文公开的另一实施例中,一种场效应晶体管包括:金刚石衬底;在所述金刚石衬底上的沟道,其中所述沟道是金刚石纳米线;以及多个离子,注入在所述金刚石纳米线的顶部下方的所述金刚石纳米线中、或者注入所述金刚石纳米线与所述金刚石衬底的相交部;其中,所述多个离子被从所述金刚石纳米线的侧面以倾斜的角度注入。
在本文公开的另一实施例中,一种用于制造电隔离金刚石纳米线的方法包括:提供金刚石衬底;在所述金刚石衬底上形成金刚石纳米线;以及将离子注入在所述金刚石纳米线的顶部下方的所述金刚石纳米线中、或者注入所述金刚石纳米线与所述金刚石衬底的相交部;其中,所述多个离子被从所述金刚石纳米线的侧面以倾斜的角度注入。
这些和其他特征和优点将从以下详细描述和附图变得更为明显。在所述附图和描述中,附图标记表示各种特征,在所述附图和描述中,相同的附图标记都指代相同的特征。
附图说明
图1A示出金刚石纳米线晶体管的器件示意图,图1B示出沟道以及栅极和电介质的横截面,图1C示出根据本发明的典型注入工艺的示意图;
图2示出在N2注入之前和之后p型金刚石材料的导电性的曲线图,表明根据本发明的注入对器件隔离的有效性;
图3A、图3B和图3C示出在各种材料中以45度进行45keV N2注入的离子范围:图3A为金刚石,图3B为钨,图3C为铝;以及
图4A、图4B、图4C、图4D、图4E、图4F、图4G、图4H和图4I示出根据本发明的用于为金刚石离子注入制作掩模结构的工艺流程。
具体实施方式
在下面的描述中,阐述了许多具体细节,以清楚地描述本文中公开的各种具体实施例。然而,本领域技术人员将理解,在没有下文讨论的所有具体细节的情况下,可以实施本发明。在其它实例中,未描述公知特征以不使本发明模糊。
本文描述了一种用于制作金刚石纳米线的设备和方法,该金刚石纳米线物理上接合到金刚石衬底,但与该衬底电隔离,这允许制作各种器件,例如金刚石纳米线MOSFET。本文还描述了一种用于各种电子和光子应用的、由均匀金刚石衬底制作金刚石纳米线的方法和工艺。描述了一种用于离子注入的掩模结构,以选择性地破坏金刚石纳米线下的金刚石晶格,而不会降低纳米线本身的材料质量。该方法采用微加工和离子注入的结合,以在金刚石衬底上水平地制作金刚石纳米线。
图1A示出场效应晶体管10的示意图,场效应晶体管10在金刚石衬底20上具有源极12、漏极14、栅极16和沟道18。围绕纳米线沟道18的栅极16调节从源极12到漏极14的电流传输。栅极16通过电介质22与沟道18绝缘。
图1B示出器件10在栅极区域中的横截面,其示出栅极16、电介质22和金刚石纳米线沟道18。沟道18由栅极16通过栅极16的三个表面,即栅极16的顶部24和栅极16的两个侧面26和28控制。沟道18的底部30位于金刚石衬底20上并连接到金刚石衬底20。为了制造功能性器件,需要有效地阻断从源极12经由衬底20到漏极14的泄漏路径。
对于硅工业中典型的现有技术器件设计,FinFET型器件在沟道下方具有穿通阻挡层,以将鳍形的沟道与衬底隔离。p/n结的存在有效地阻止了电流从源极经由衬底流向漏极。因此,唯一有效的电流通路是由栅极控制的沟道。另一种现有技术方法是使用SOI晶片在氧化物上构建硅器件。在这种情况下,沟道与衬底自然分离。然而,对于金刚石电子器件,没有相应的材料,如氧化物上的金刚石。因此,唯一可行的方法是将沟道与衬底电隔离。
图2为在氮(N2)离子注入之前和之后硼金刚石导电率的测量图。如图所示,在N2注入之后,导电率下降了3个数量级,这表明金刚石中的离子注入可实现器件隔离。其他可用的离子包括氩、氢、氦和其他惰性气体。
图1C示出典型的离子注入工艺,以在沟道18下方制作隔离层,从而将沟道18与金刚石衬底20隔离。在离子注入期间,具有厚度ts 42的掩模层40被用来保护有源沟道18。沟道18具有厚度tc 44。掩模层40需要有效地阻挡所有进入的高能离子46,使得鳍形的有源沟道18不会退化。注入离子在材料中行进的距离由材料的停止功率(stop power)确定。对于典型的硅注入,使用电介质或金属就足以进行具有掩模的离子注入,因为大多数离子注入种源在硅中的离子范围比在掩模材料中的深得多。然而,金刚石并非如此。
图3A、图3B和图3C分别示出N2离子注入在金刚石、钨(W)和铝(Al)这些不同材料中的离子范围。测量所使用的注入能量为45keV,注入角为45°。通常,金属越重,具有越短的离子范围,钨比铝重,因此如图3B和图3C所示,钨中的离子范围仅为约40nm,而铝中的离子范围为约100nm。金刚石中的离子范围为约57nm,仅略大于钨。可以使用其他重金属,诸如铋、钼或锡。
如图1C所示,为了完全注入沟道下方的金刚石区域,注入离子需要行进至少ts+tc/2的范围,以从侧面26和28进行双侧注入。由于金刚石注入区域是由掩模厚度决定的,因此掩模层与金刚石之间的离子范围差需要大于tc/2,这通常在100nm量级。然而,对于这个特征,没有明显的掩模材料可利用。
图4A、图4B、图4C、图4D、图4E、图4F、图4G、图4H和图4I示出克服这一问题的用于制作金刚石离子注入的掩模结构的工艺流程。如图4A所示,该工艺始于在金刚石衬底20上形成用于金刚石沟道18的纳米线或鳍。然后,如图4B所示,使用沉积电介质50的原子层沉积(ALD)层来保护沟道18的表面。也可以使用例如等离子体增强化学气相沉积(PECVD)的化学气相沉积(CVD)以及例如溅射和蒸发的物理气相沉积(PVD)进行沉积。这是可选步骤。接下来,如图4C所示,电介质或聚合物52通过旋涂或沉积来沉积,并覆盖沟道18。一种示例电介质或聚合物为聚二甲基戊二酸(PMGI)抗蚀涂层或旋涂玻璃(SOG)涂层。其他电介质或聚合物包括聚酰亚胺和双苯并环丁烯。然后,使电介质或聚合物52平坦化。化学机械抛光(CMP)工艺或干蚀刻工艺可用于使电介质或聚合物52平坦化。然后,如图4D所示,使用干蚀刻或湿蚀刻将电介质或聚合物52的平坦化表面回蚀,以暴露沟道18的在沟道18的顶部与衬底20之间的一部分。接下来,如图4E所示,沉积金属层54以适形地覆盖沟道18的顶部和回蚀的电介质或聚合物52的表面。然后,如图4F所示,金属层54可通过光刻来图案化,并且进行湿蚀刻或干蚀刻,使得仅沟道18的顶部被覆盖。接下来,如图4G所示,通过各向同性蚀刻去除电介质或聚合物52,使得掩模金属层54下方没有电介质或聚合物材料。或者,如果电介质或聚合物52层中的注入离子的离子范围足够小于掩模金属层54中的离子范围,则电介质或聚合物52可以留在原位。然后,如图4H所示,可以在沟道18的两侧分别以倾斜的角度进行离子注入56和58。注入离子可以是p型或n型离子。离子注入56和58将种源注入到沟道18的顶部与金刚石衬底20之间的沟道18中、或者注入沟道18与衬底20的交叉处。金属掩模54遮蔽沟道18的有源部分60免于离子注入。最后,如步骤4I所示,可以移除金属掩模层54和保护层电介质50。
通过这种工艺,在沟道18下方的金刚石衬底20中的注入区域只有tc/2的厚度,如图4H所示,假设使用双注入。阻挡金属掩模厚度可以是ts。由于在这种工艺中金刚石的注入区域与金属掩模厚度是解耦的,因此非常容易找到确保金刚石中成功注入的掩模。典型的金刚石沟道可具有约100nm的厚度。如图3B所示,用于金属掩模层54的200nm钨(W)足以阻挡45keVN2注入。
在按照专利法规的要求描述了本发明之后,本领域技术人员将理解如何对本发明进行更改和修改以满足其特定的要求或条件。可以在不偏离本文所公开的本发明的范围和精神的情况下进行此类更改和修改。
根据法律的要求,出于说明和披露的目的,提供上述示例性和优选实施例的详细描述。本文不意在详尽无遗,也无意将本发明限制为所述的精确形式,而是仅使本领域技术人员能够理解本发明如何适合于特定用途或实施方式。对于本领域技术人员来说,修改和变化的可能性是显而易见的。本文不意在通过对示例性实施例的描述施加限制,这些示例性实施例可以包括公差、特征尺寸、特定操作条件、工程规范等,并且可以在实施方式之间变化或者随着技术状态的改变而变化,并且不应因此暗示任何限制。申请人已经就当前的技术状态进行了本公开,但也考虑了改进,并且将来的调整可能会考虑到这些改进,即根据当时的技术状态。本发明的范围是由书面的权利要求和同等适用来限定的。对单数形式的权利要求要素的引用并不意味着“一个且只有一个”,除非明确说明。此外,本文中的元件、组件、方法或工艺步骤都不意在专用于公众,而不论该要素、组件或步骤是否在权利要求中明确限定。本文中的权利要求要素不得根据35U.S.C第112节第6段的规定解释,除非使用短语“用于……的装置”明确限定了该要素,并且本文中的方法或工艺步骤不得根据这些规定解释,除非使用短语“包括……的步骤”明确地限定了该步骤。
优选地,包括本文所述的所有元件、部件和步骤。应当理解的是,这些元件、部件和步骤中的任何一个可以被其他元件、部件和步骤替换或完全删除,这对于本领域技术人员来说是显然的。
大体上,本申请至少公开了以下内容:一种用于制造电隔离金刚石纳米线的方法包括在金刚石衬底上形成金刚石纳米线,在金刚石纳米线和金刚石衬底上沉积电介质或聚合物,使介电体或聚合物平坦化,蚀刻使金刚石纳米线的第一部分暴露的平坦化的电介质或聚合物,沉积金属层以适形地覆盖金刚石纳米线的第一部分,以及将离子植入到金刚石纳米线的第二部分中,在金刚石纳米线的第一部分和金刚石衬底之间或者在金刚石纳米线和金刚石衬底的交叉点处,其中离子从金刚石纳米线的第一侧以倾斜的角度被注入。
概念
概念1、一种制造电隔离金刚石纳米线的方法,包括:
在金刚石衬底上形成金刚石纳米线;
在所述金刚石纳米线和所述金刚石衬底上沉积电介质或聚合物;
将所述电介质或所述聚合物平坦化;
蚀刻平坦化的所述电介质或所述聚合物的一部分以暴露所述金刚石纳米线的第一部分;
沉积金属层以适形地覆盖所述金刚石纳米线的所述第一部分;以及
将离子注入所述金刚石纳米线的位于所述金刚石纳米线的所述第一部分与所述金刚石衬底之间的第二部分中、或者注入所述金刚石纳米线与所述金刚石衬底的相交部;
其中,所述离子被从所述金刚石纳米线的第一侧以倾斜的角度注入。概念2、根据概念1所述的方法,还包括:
在注入离子之前,去除所述电介质或所述聚合物。
概念3、根据概念1或2所述的方法,还包括:
在所述金刚石纳米线上和所述金刚石衬底上沉积所述电介质或所述聚合物之前,通过原子层沉积(ALD)、化学气相沉积(CVD)、或物理气相沉积(PVD),在所述金刚石纳米线上沉积第二电介质以保护所述金刚石纳米线的表面。
概念4、根据概念1、2或3所述的方法,还包括:
图案化和蚀刻所述金属层。
概念5、根据概念1、2、3或4所述的方法,其中,所述电介质或所述聚合物为聚二甲基戊二酸抗蚀涂层或旋涂玻璃涂层。
概念6、根据概念1、2、3、4或5所述的方法,其中,将所述电介质或所述聚合物平坦化包括化学机械抛光或干蚀刻。
概念7、根据概念2所述的方法,其中,将所述电介质或所述聚合物去除包括各向同性蚀刻,使得没有电介质或聚合物材料留在所述金属层下面。概念8、根据概念1、2、3、4、5、6或7所述的方法:
其中,所述金属层包括钨层、铋、钼、或锡。
概念9、根据概念8所述的方法,其中,所述钨层至少200nm厚。
概念10、根据概念1、2、3、4、5、6、7、8或9所述的方法:
其中,所述注入离子包括N2、氩、氢、氦或另一种惰性气体。
概念11、根据概念1、2、3、4、5、6、7、8、9或10所述的方法,还包括去除所述金属掩模层。
概念12、根据概念1、2、3、4、5、6、7、8、9、10或11所述的方法,其中,所述离子被从所述金刚石纳米线的第二侧以倾斜的角度注入。
概念13、根据概念1、2、3、4、5、6、7、8、9、10、11或12所述的方法,其中,所述金刚石纳米线为用于场效应晶体管的沟道。
概念14、根据概念13所述的方法,还包括:
在所述沟道上方沉积第三电介质;
在所述第三电介质上方形成栅极;
在所述金刚石衬底上形成所述场效应晶体管的漏极,所述漏极耦接至所述金刚石纳米线的第一端部;以及
在所述金刚石衬底上形成所述场效应晶体管的源极,所述源极耦接至所述金刚石纳米线的第二端部;
其中,所述第三电介质将所述栅极与所述沟道绝缘。
概念15、一种电隔离金刚石纳米线,包括:
金刚石衬底;
在所述金刚石衬底上的金刚石纳米线;以及
多个离子,注入在所述金刚石纳米线的顶部下方的所述金刚石纳米线中、或者注入在所述金刚石纳米线与所述金刚石衬底的相交部。
概念16、根据概念15所述的电隔离金刚石纳米线:
其中,所述多个离子包括N2。
概念17、根据概念15或16所述的电隔离金刚石纳米线:
其中,所述多个离子被从所述金刚石纳米线的第一侧以倾斜的角度注入。
概念18、根据概念17所述的电隔离金刚石纳米线:
其中,所述多个离子被从所述金刚石纳米线的第二侧以倾斜的角度注入。
概念19、一种场效应晶体管,包括:
金刚石衬底;
在所述金刚石衬底上的沟道,其中所述沟道是金刚石纳米线;以及
多个离子,注入在所述金刚石纳米线的顶部下方的所述金刚石纳米线中、或者注入在所述金刚石纳米线与所述金刚石衬底的相交部;
其中,所述多个离子被从所述金刚石纳米线的侧面以倾斜的角度注入。概念20、根据概念19所述的场效应晶体管,其中,所述多个离子包括N2。概念21、根据概念19或20所述的场效应晶体管,还包括:
在所述沟道上方的电介质;以及
在所述电介质上方的栅极;
在所述金刚石衬底上的所述场效应晶体管的漏极,所述漏极耦接至所述沟道的第一端部;以及
在所述金刚石衬底上的所述场效应晶体管的源极,所述源极耦接至所述沟道的第二端部;
其中,所述电介质将所述栅极与所述沟道绝缘。
概念22、一种制造电隔离金刚石纳米线的方法,包括:
提供金刚石衬底;
在所述金刚石衬底上形成金刚石纳米线;以及
将离子注入在所述金刚石纳米线的顶部下方的所述金刚石纳米线中、或者注入所述金刚石纳米线与所述金刚石衬底的相交部;
其中,所述多个离子被从所述金刚石纳米线的侧面以倾斜的角度注入。
Claims (21)
1.一种用于制造电隔离金刚石纳米线的方法,包括:
在金刚石衬底上形成金刚石纳米线;
在所述金刚石纳米线和所述金刚石衬底上沉积电介质或聚合物;
将所述电介质或所述聚合物平坦化;
蚀刻平坦化的所述电介质或所述聚合物的一部分以暴露所述金刚石纳米线的顶部;
沉积金属层以适形地覆盖所述金刚石纳米线的所述顶部;以及
将离子注入位于所述金刚石纳米线的所述顶部下面的所述金刚石纳米线中以及位于所述金刚石纳米线与所述金刚石衬底的相交部处的所述金刚石衬底中;
其中,所述离子被从所述金刚石纳米线的侧面以倾斜的角度注入;
其中,所述金刚石纳米线的被所述金属层覆盖的所述顶部没有被注入所述离子;
其中,注入到所述金刚石衬底中的所述离子将所述金刚石纳米线与所述金刚石衬底电隔离;以及
其中,所注入的离子包括氮、氩、氢、氦或其他惰性气体。
2.根据权利要求1所述的方法,还包括:
在注入离子之前,去除所述电介质或所述聚合物。
3.根据权利要求1所述的方法,还包括:
在所述金刚石纳米线上和所述金刚石衬底上沉积所述电介质或所述聚合物之前,通过原子层沉积ALD、化学气相沉积CVD、或物理气相沉积PVD,在所述金刚石纳米线上沉积第二电介质以保护所述金刚石纳米线的表面。
4.根据权利要求1所述的方法,还包括:
图案化和蚀刻所述金属层。
5.根据权利要求1所述的方法,其中,所述电介质或所述聚合物为聚二甲基戊二酸抗蚀涂层或旋涂玻璃涂层。
6.根据权利要求1所述的方法,其中,将所述电介质或所述聚合物平坦化包括化学机械抛光或干蚀刻。
7.根据权利要求2所述的方法,其中,将所述电介质或所述聚合物去除包括各向同性蚀刻,使得没有电介质或聚合物材料留在所述金属层下面。
8.根据权利要求1所述的方法:
其中,所述金属层包括钨、铋、钼、或锡。
9.根据权利要求8所述的方法,其中,所述钨至少200nm厚。
10.根据权利要求1所述的方法,还包括去除所述金属层。
11.根据权利要求1所述的方法,其中,所述离子被从所述金刚石纳米线的第一侧和第二侧以倾斜的角度注入。
12.根据权利要求1所述的方法,其中,所述金刚石纳米线为用于场效应晶体管的沟道。
13.根据权利要求12所述的方法,还包括:
在所述沟道上方沉积第三电介质;
在所述第三电介质上方形成栅极;
在所述金刚石衬底上形成所述场效应晶体管的漏极,所述漏极耦接至所述金刚石纳米线的第一端部;以及
在所述金刚石衬底上形成所述场效应晶体管的源极,所述源极耦接至所述金刚石纳米线的第二端部;
其中,所述第三电介质将所述栅极与所述沟道绝缘。
14.一种用于制造电隔离金刚石纳米线的方法,包括:
提供金刚石衬底;
在所述金刚石衬底上形成金刚石纳米线;
沉积金属层以适形地覆盖所述金刚石纳米线的顶部;以及
将离子注入位于所述金刚石纳米线的所述顶部下面以及位于所述金刚石纳米线与所述金刚石衬底的相交部处的所述金刚石纳米线中;
其中,所述离子被从所述金刚石纳米线的侧面以倾斜的角度注入;
其中,所述金刚石纳米线的被所述金属层覆盖的所述顶部没有被注入所述离子;
其中,注入到所述金刚石衬底中的所述离子将所述金刚石纳米线与所述金刚石衬底电隔离;以及
其中,所注入的离子包括氮、氩、氢、氦或其他惰性气体。
15.根据权利要求14所述的方法:
其中,所述金属层包括钨、铋、钼、或锡。
16.一种电隔离金刚石纳米线,包括:
金刚石衬底;
在所述金刚石衬底上的金刚石纳米线;以及
多个离子,从所述金刚石纳米线的侧面以倾斜的角度注入在所述金刚石纳米线的顶部下面的所述金刚石纳米线中以及在所述金刚石纳米线与所述金刚石衬底的相交部处的所述金刚石衬底中;
其中,在离子注入期间,金属层适形地覆盖所述金刚石纳米线的至少所述顶部,使得所述顶部没有被注入所述离子;
其中,注入到所述金刚石衬底中的所述离子将所述金刚石纳米线与所述金刚石衬底电隔离;以及
其中,所注入的离子包括氮、氩、氢、氦或其他惰性气体。
17.根据权利要求16所述的电隔离金刚石纳米线:
其中,所述多个离子被从所述金刚石纳米线的第一侧和第二侧以倾斜的角度注入。
18.根据权利要求16所述的电隔离金刚石纳米线:
其中,所述金属层包括钨、铋、钼、或锡。
19.一种场效应晶体管,包括:
金刚石衬底;
在所述金刚石衬底上的沟道,其中所述沟道是金刚石纳米线;以及
多个离子,注入在所述金刚石纳米线的顶部下面的所述金刚石纳米线中以及在所述金刚石纳米线与所述金刚石衬底的相交部处的所述金刚石衬底中;
其中,所述多个离子被从所述金刚石纳米线的侧面以倾斜的角度注入;
其中,在离子注入期间,金属层适形地覆盖所述金刚石纳米线的至少顶部,使得所述顶部没有被注入所述离子;
其中,注入到所述金刚石衬底中的所述离子将所述金刚石纳米线与所述金刚石衬底电隔离;以及
其中,所注入的离子包括氮、氩、氢、氦或其他惰性气体。
20.根据权利要求19所述的场效应晶体管,还包括:
在所述沟道上方的电介质;以及
在所述电介质上方的栅极;
在所述金刚石衬底上的所述场效应晶体管的漏极,所述漏极耦接至所述沟道的第一端部;以及
在所述金刚石衬底上的所述场效应晶体管的源极,所述源极耦接至所述沟道的第二端部;
其中,所述电介质将所述栅极与所述沟道绝缘。
21.根据权利要求19所述的场效应晶体管:
其中,所述金属层包括钨、铋、钼、或锡。
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