CN111653630B - Manufacturing method of double-color focal plane detector and double-color image obtaining method - Google Patents

Manufacturing method of double-color focal plane detector and double-color image obtaining method Download PDF

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CN111653630B
CN111653630B CN202010358802.5A CN202010358802A CN111653630B CN 111653630 B CN111653630 B CN 111653630B CN 202010358802 A CN202010358802 A CN 202010358802A CN 111653630 B CN111653630 B CN 111653630B
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focal plane
plane detector
color
image
band
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CN111653630A (en
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冯斌
李琳
康超
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Northwestern Polytechnical University
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/02162Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract

The invention discloses a method for manufacturing a double-color focal plane detector and a method for acquiring a double-color image, the manufacturing method of the two-color focal plane detector and the two-color image acquisition method have the advantages of simple manufacturing process, compact structure, high integration level, capability of snapshot imaging and low cost.

Description

Manufacturing method of double-color focal plane detector and double-color image obtaining method
Technical Field
The invention belongs to the technical field of photoelectric imaging, and particularly relates to a manufacturing method of a double-color focal plane detector and a double-color image acquisition method.
Background
The current two-color imaging methods are mainly classified into three types according to the structure: the first type is a combination of two sets of monochrome imaging systems responsive to different wavelength bands (e.g., granted patent publication No. CN 103974039B); the second type is that two focal plane detectors share one optical system, and in the optical path, a light splitting element is used to split the incident light into two paths on the wave band, and the two paths are respectively responded by the two focal plane detectors (for example, granted patent publication No. CN 105227818B); the third type consists of a dichroic focal plane detector responsive to two bands, preceded by an optical system (e.g., granted patent publication No.: CN 105244357B). The first two types of two-color imaging systems are limited in application due to the defects that the structure is large, the cost is high, a space registration error easily exists between the two detectors, the reliability is poor and the like. The third type of two-color imaging method has the advantages of high integration level, miniaturization, small spatial registration error and the like. The two-color focal plane detector is a core device of a third type of imaging system.
The structure of the current bicolor focal plane detector mainly has two types: the first is an array type double-color focal plane detector, adjacent pixels in the focal plane detector respond to different wave bands, and the two types of pixels are arranged in a staggered manner, so that the difficulty of the manufacturing process of the detector is extremely high; the second is a stacked two-color focal plane detector, which is composed of two stacked photodiodes or infrared light detection quantum wells distributed longitudinally and can obtain radiation of two wave bands completely aligned spatially (granted patent publication No. CN 105244357B). The two dual-color focal plane detectors require radiation response and signal reading of two wave bands in a small space in one pixel or adjacent pixels, and provide quite high design and preparation process requirements for the material, device packaging and reading circuit design of the detectors, so that the preparation process of the dual-color focal plane detectors is complex and the cost is high. In conclusion, the existing two-color imaging method has the defects of large system volume, complex preparation process and high cost.
At present, a document (research on design and manufacturing process of visible/infrared dual-band array type optical filter, 2007,36, z1) discloses a design and manufacturing process of a dual-band array type optical filter. The manufacturing scheme adopts two working procedures of plating filter films on a sapphire substrate to finish the dual-waveband array type optical filter, and comprises a first working procedure of plating a long-wave-pass infrared cut-off filter film and a second working procedure of plating a short-wave-pass cut-off filter film. When the manufacturing scheme is used for implementing the second step of coating the filter film, the position of the coated filter film in the first step needs to be accurately positioned, the second coating step is ensured not to influence the coated filter film in the first step, otherwise, the coated filter film in the first coating step is damaged, and even the coated filter film in the first step is damaged, so that the overall quality, performance and yield of the array type optical filter are seriously reduced.
Disclosure of Invention
Aiming at the defects of the existing scheme, the invention provides a manufacturing method of a bicolor focal plane detector and a bicolor image acquisition method. A manufacturing method of a two-color focal plane detector and a two-color image acquisition method are provided, wherein the manufacturing method comprises the steps of plating a single-color filter membrane which is arranged in a comb-shaped period on a substrate to form a micro-filter membrane array, pasting the micro-filter membrane array on a focal plane of a focal plane detector, acquiring a wide-band image and a first narrow-band image which are directly output by the two-color focal plane detector, respectively carrying out double amplification processing on the wide-band image and the first narrow-band image along a direction perpendicular to the extension direction of the filter membrane, and removing the full-size first narrow-band image from the full-size wide-band image to obtain a full-size second narrow-band image.
In order to achieve the purpose, the invention adopts the following technical scheme to realize the purpose:
the invention discloses a method for manufacturing a two-color focal plane detector, which comprises the following steps:
s11: plating a monochromatic filter membrane in comb-shaped periodic arrangement on a substrate to form a micro-filter array;
s12: and pasting the micro optical filter array to a focal plane of the focal plane detector to form a double-color focal plane detector, wherein the substrate and the working waveband of the focal plane detector are provided with an intersection waveband I, and the working waveband of the single-color filter membrane and the intersection waveband I are provided with an intersection waveband II.
As a preferred embodiment of the present invention: the plurality of monochromatic filter films are arranged on the surface of the substrate in a comb-shaped period, wherein the width of a single monochromatic filter film is equal to 1/2 of the arrangement period.
As a preferred embodiment of the present invention: the thickness of the substrate is 0.1-2.0 mm.
As a preferred embodiment of the present invention: the focal plane detector is any one of a visible-near infrared focal plane detector (the working waveband is 0.4-1.0 mu m), a visible-short wave infrared focal plane detector (the working waveband is 0.4-1.7 mu m) and a short wave infrared focal plane detector (the working waveband is 0.9-1.7 mu m).
As a preferred embodiment of the present invention: and adhering the micro-filter array to a focal plane of the focal plane detector, wherein the adhering surface of the micro-filter array is any one of the surface with the monochromatic filter membrane and the surface without the monochromatic filter membrane.
As a preferred embodiment of the present invention: the micro-filter plate array is adhered to the focal plane detector, and the alignment direction of the micro-filter plate array and the focal plane detector is any one of the two directions of alignment along the horizontal direction of the focal plane detector and alignment along the vertical direction of the focal plane detector.
As a preferred embodiment of the present invention: the horizontal direction along the focal plane of the focal plane detector is aligned, the extension direction of the monochromatic filter membrane is consistent with the horizontal direction of the focal plane detector, and the monochromatic filter membrane and the n of the focal plane detector are single1Line pixels aligned, n1Is a positive integer.
As a preferred embodiment of the present invention: the filter films are aligned along the vertical direction of the focal plane, the extension direction of the monochromatic filter film is consistent with the vertical direction of the focal plane detector, and the monochromatic filter film and the n of the focal plane detector are single2Column pixels aligned, n2Is a positive integer.
As a preferred embodiment of the present invention: the micro-filter array is adhered to the focal plane of the focal plane detector to form a double-color focal plane detector, and the method comprises the following steps:
s21: coating ultraviolet sensitive glue with the thickness of less than 100nm on a focal plane of the focal plane detector;
s22: a working light source is formed by adding an optical filter in front of an LED light source, wherein the working waveband of the optical filter is positioned in the intersection waveband I and does not intersect with the working waveband of the monochromatic filter film;
s23: under the irradiation of the working light source, adjusting the position and the angle of the micro-filter plate array to ensure that the micro-filter plate array is aligned with the focal plane pixel of the focal plane detector;
s24: and curing the micro-fluorescence plate array and the focal plane of the focal plane detector together by using an ultraviolet lamp for exposure.
Based on the double-color focal plane detector, the invention discloses a double-color image acquisition method, which comprises the following steps:
s31: in the bi-chromatic focal plane detector prepared by the method for manufacturing a bi-chromatic focal plane detector according to any embodiment, the pixel element which is not acted by the monochromatic filter film outputs a broadband image, and the pixel element which is acted by the monochromatic filter film outputs a first narrow-band image, so that the broadband image and the first narrow-band image are obtained;
s32: respectively carrying out double-time image amplification processing on the wide-band image and the first narrow-band image along a direction perpendicular to the extension direction of the monochromatic filter film by using an image amplification processing method to correspondingly obtain a full-size wide-band image and a full-size first narrow-band image;
s33: and removing the full-size first narrow-band image from the full-size wide-band image to obtain a full-size second narrow-band image, so as to obtain two full-size narrow-band images, wherein the removing method is to subtract the full-size first narrow-band image from a beta-fold full-size wide-band image to obtain the full-size second narrow-band image, the beta value is a ratio of an average value of the first narrow-band image output by the two-color focal plane detector to an average value of the wide-band image under a light source irradiation condition that a working band is within a band of the monochromatic filter film, and the image average value is an average value of all pixel values in the image.
As a preferred embodiment of the present invention: the image amplification processing method is any one of four methods, namely nearest neighbor interpolation, linear interpolation, cubic spline interpolation and deep learning.
The invention has the beneficial effects that:
the invention forms a micro-filter array by plating a single-color filter film which is arranged in a comb-shaped period on a substrate, pastes the micro-filter array on a focal plane of a focal plane detector to form a double-color focal plane detector, obtains a wide-band image and a first narrow-band image which are directly output by the double-color focal plane detector, respectively performs double amplification on the wide-band image and the first narrow-band image along the direction vertical to the extension direction of the filter film, and removes the first narrow-band image in the full-size wide-band image to obtain a second narrow-band image in the full-size.
In addition, the bicolor focal plane detector provided by the invention only adopts one procedure to plate the monochromatic filter film, and compared with the manufacturing scheme of plating the bicolor filter film through two procedures, the technique complexity and cost for plating the filter film are undoubtedly reduced.
Drawings
FIG. 1 is a flow chart of a method of making a bi-color focal plane detector and a bi-color image acquisition method in accordance with the present invention;
FIG. 2 is a schematic structural diagram of a micro-filter array aligned along the horizontal direction of the focal plane according to the present invention;
FIG. 3 is a layered schematic diagram of a dual color focal plane detector for horizontal alignment along the focal plane in accordance with the teachings of the present invention;
FIG. 4 is a schematic diagram of a dual color focal plane detector for horizontal alignment along the focal plane in accordance with the teachings of the present invention;
FIG. 5 is a schematic structural diagram of a micro-filter array aligned along the vertical direction of the focal plane according to the present invention;
FIG. 6 is a layered schematic diagram of a dual color focal plane detector for alignment along a focal plane perpendicular direction according to the present invention;
fig. 7 is a schematic diagram of a dual color focal plane detector for alignment along the vertical direction of the focal plane according to the present invention.
Description of reference numerals:
101-a substrate of transparent glass; 102-a monochromatic filter film for alignment along the focal plane horizontal direction; 103-an array of micro-filters for alignment along the focal plane horizontal direction; 104-a focal plane detector with a working wave band of 0.4-1.0 μm; 105-picture elements of a focal plane detector; 106-a two-tone focal plane detector aligned horizontally along the focal plane;
201-a substrate of short wave infrared material; 202-a monochromatic filter film for alignment in the vertical direction of the focal plane; 203-an array of micro-filters for alignment along the vertical direction of the focal plane; 204-a focal plane detector with a working wave band of 0.9-1.7 μm; 205-picture elements of a focal plane detector; 206-dichroic focal plane detector aligned perpendicular to the focal plane.
Detailed Description
The invention is further described with reference to the following figures and specific embodiments.
The technical solutions in the embodiments of the present invention are clearly and completely described below. The described embodiments are only some embodiments of the invention, not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example one
Referring to fig. 1, fig. 1 is a flowchart of a method for manufacturing a two-color focal plane detector and a method for acquiring a two-color image according to the present invention. The embodiment of the invention provides a manufacturing method of a two-color focal plane detector, which is used for designing an embodiment of a two-color imaging method with the thickness of 0.4-0.7 mu m and the thickness of 0.7-1.0 mu m, and the manufacturing method of the two-color focal plane detector comprises the following steps:
s11: the substrate is plated with monochromatic filter membranes which are arranged in a comb-shaped period to form a micro-filter array.
Specifically, as shown in fig. 2 and fig. 3, a monochromatic filter 102 with a working wavelength range of 0.7-1.0 μm is plated on a substrate 101 of transparent glass in a comb-shaped periodic arrangement to form a micro-filter array 103.
S12: the micro-filter array is adhered to the focal plane of the focal plane detector to form a double-color focal plane detector, the working wave bands of the substrate and the focal plane detector have an intersection wave band I, and the working wave band of the single-color filter membrane and the intersection wave band I have an intersection wave band II.
Specifically, as shown in fig. 3 and 4, the micro-filter array 103 is attached to the focal plane of the focal plane detector 104 having an operating wavelength band of 0.4-1.0 μm, constituting a dual-color focal plane detector 106 aligned along the horizontal direction of the focal plane detector 104.
In the embodiment of the invention, the substrate 101 may be a glass substrate with a working waveband covering 0.4-1.0 μm, the substrate 101 is preferably made of K9 glass, and may also be made of K7 and F5 glass.
In the embodiment of the invention, the working wave band of the monochromatic filter film 102 is 0.7-1.0 μm, the working wave band of the K9 glass substrate is 0.35-2.0 μm, the working wave band of the focal plane detector 104 is 0.4-1.0 μm, and the intersection of the working wave bands of the monochromatic filter film 102, the substrate 101 and the focal plane detector 104 is 0.7-1.0 μm.
In the embodiment of the invention, the plurality of monochromatic filter coatings 102 are arranged on the surface of the substrate 101 in a comb-shaped period, the arrangement period of a single monochromatic filter coating 102 is 9.6 μm, the width of a single monochromatic filter coating 102 is 4.8 μm, and the width of the single monochromatic filter coating 102 is equal to 1/2 of the arrangement period.
In the present example, the substrate of the K9 glass had a thickness of 0.8 mm.
In the embodiment of the invention, the focal plane detector 104 can be a frame exposure CMOS focal plane detector, the working waveband is 0.4-1.0 μm, the area array size of the frame exposure CMOS focal plane detector is 1280 × 1024, and the pixel size is 4.8 μm × 4.8 μm.
In the embodiment of the present invention, the micro-optical filter array 103 is adhered to the focal plane of the focal plane detector 104, and the adhering surface of the micro-optical filter array 103 is any one of the upper surface and the lower surface thereof.
In the embodiment of the present invention, the alignment direction of the micro-optical filter array 103 and the focal plane detector 104 is aligned along the horizontal direction of the focal plane detector 104, the extension direction of the monochromatic filter 102 is consistent with the horizontal direction of the focal plane detector 104, and the single monochromatic filter 102 and the n of the focal plane detector 104 are aligned1Line pixels aligned, n1Is a positive integer.
As a preferred embodiment of the present invention: the micro-filter array 103 is adhered to the focal plane of the focal plane detector 104 to form a two-color focal plane detector, and the adhering process comprises the following steps:
s21: coating ultraviolet sensitive glue with the thickness less than 100nm on the focal plane of the focal plane detector 104;
s22: the working light source is formed by adding an optical filter with the working wave band within 0.4-0.7 mu m in front of the LED light source;
s23: under the irradiation of a working light source, the position and the angle of the micro-filter array 103 are adjusted, so that the micro-filter array 103 is aligned with the pixel of the focal plane detector 104;
s24: the micro-filter array 103 is cured with the focal plane of the focal plane detector 104 using an ultraviolet lamp exposure.
Referring to fig. 1 again, the present embodiment further provides a method for obtaining a bi-color image based on the method for manufacturing a bi-color focal plane detector in the foregoing embodiment, where the method for obtaining a bi-color image includes the following steps:
s31: the bicolor focal plane detector prepared by the embodiment is utilized to detect and output a wide waveband image with a working waveband of 0.4-1.0 mu m and a first narrow waveband image with a working waveband of 0.7-1.0 mu m;
s32: respectively carrying out double-time image amplification processing on the wide-band image and the first narrow-band image along the direction vertical to the extension direction of the monochromatic filter membrane by using an image amplification processing method to correspondingly obtain a full-size wide-band image and a full-size first narrow-band image;
s33: and removing a full-size first narrow-band image with the working wave band of 0.7-1.0 mu m from a full-size wide-band image with the working wave band of 0.4-1.0 mu m to obtain a full-size second narrow-band image with the working wave band of 0.4-0.7 mu m, thereby obtaining two full-size narrow-band images, wherein the removing method is to subtract the full-size first narrow-band image from a beta-time full-size wide-band image to obtain the full-size second narrow-band image, and the beta value is the ratio of the average value of the first narrow-band image output by the two-color focal plane detector to the average value of the wide-band image under the light source irradiation condition with the working wave band of 0.7-1.0 mu m, wherein the average value of the images is the average value of all pixel values in the images.
As a preferred embodiment of the present invention: the image amplification processing method is any one of four methods, namely nearest neighbor interpolation, linear interpolation, cubic spline interpolation and deep learning.
In the embodiment of the invention: preferably, the image magnification processing method is a cubic spline interpolation method.
Example two
Referring to fig. 1, fig. 1 is a flowchart of a method for manufacturing a two-color focal plane detector and a method for acquiring a two-color image according to the present invention. The embodiment of the invention provides a manufacturing method of a two-color focal plane detector, which is used for designing an embodiment of a two-color imaging method with the thickness of 0.9-1.3 mu m and the thickness of 1.3-1.7 mu m, and the manufacturing method of the two-color focal plane detector comprises the following steps:
s11: the substrate is plated with monochromatic filter membranes which are arranged in a comb-shaped period to form a micro-filter array.
Specifically, as shown in fig. 5 and fig. 6, a substrate 201 made of short wave infrared material is plated with monochromatic filter membranes 202 with working wavelength of 1.3-1.7 μm in a comb-shaped periodic arrangement to form a micro-filter array 203.
S12: the micro-filter array is adhered to the focal plane of the focal plane detector to form a double-color focal plane detector, the working wave bands of the substrate and the focal plane detector have an intersection wave band I, and the working wave band of the single-color filter membrane and the intersection wave band I have an intersection wave band II.
Specifically, as shown in fig. 6 and 7, the micro-filter array 203 is attached to the focal plane of the focal plane detector 204 having an operating wavelength band of 0.9-1.7 μm, and a two-color focal plane detector 206 aligned in a direction perpendicular to the focal plane of the focal plane detector 204 is configured.
In the embodiment of the invention, the substrate 201 may be a substrate made of a short-wave infrared material with a working waveband covering 0.9-1.7 μm, preferably a magnesium fluoride material is used as the substrate, and may also be a calcium fluoride material or a barium fluoride material.
In the embodiment of the invention, the working waveband of the monochromatic filter film 202 is 1.3-1.7 μm, the working waveband of the magnesium fluoride material substrate 201 is 0.11-8.5 μm, the working waveband of the focal plane detector 204 is 0.9-1.7 μm, and the intersection of the working wavebands of the monochromatic filter film 202, the substrate 201 and the focal plane detector 204 is 1.3-1.7 μm.
In the embodiment of the present invention, the plurality of monochromatic filter films 202 are arranged on the surface of the substrate 201 in a comb-like period, the arrangement period of a single monochromatic filter film is 30 μm, the width of a single monochromatic filter film is 15 μm, and the width of a single monochromatic filter film is equal to 1/2 of the arrangement period.
In the embodiment of the invention, the thickness of the substrate of the magnesium fluoride material is 0.5 mm.
In the embodiment of the present invention, the focal plane detector 204 includes any one of a visible-short wave infrared focal plane detector (with a working band of 0.4-1.7 μm) or a short wave infrared focal plane detector (with a working band of 0.9-1.7 μm).
In the embodiment of the invention, the focal plane detector 204 is an indium-gallium-arsenic focal plane detector, the working waveband is 0.9-1.7 μm, the area array size of the indium-gallium-arsenic focal plane detector is 640 x 512, and the pixel size is 15 μm x 15 μm.
In the embodiment of the present invention, the micro-optical filter array 203 is adhered to the focal plane of the focal plane detector 204, and the adhering surface of the micro-optical filter array 203 is any one of the upper surface and the lower surface thereof.
In the embodiment of the present invention, the alignment direction of the micro-optical filter array 203 and the focal plane detector 204 is aligned along the vertical direction of the focal plane detector 204, the extension direction of the single monochromatic filter 202 is consistent with the vertical direction of the focal plane detector 204, the single monochromatic filter 202 is aligned with n2 columns of pixels of the focal plane detector 204, and n2 is a positive integer.
As a preferred embodiment of the present invention: the micro-filter array 203 is adhered to the focal plane of the focal plane detector 204 to form a two-color focal plane detector, and the adhering process comprises the following steps:
s21: coating ultraviolet sensitive glue with the thickness of less than 100nm on the focal plane of the focal plane detector 204;
s22: the working light source is formed by adding an optical filter with the working wave band within the range of 0.9-1.3 mu m in front of the LED light source;
s23: under the irradiation of a working light source, the position and the angle of the micro-filter array 203 are adjusted, so that the micro-filter array 203 is aligned with the pixel 205 of the focal plane detector 204;
s24: the array of micro-filters 203 is cured with the focal plane of the focal plane detector 204 using an ultraviolet lamp exposure.
Referring to fig. 1 again, the present embodiment further provides a method for obtaining a bi-color image based on the method for manufacturing a bi-color focal plane detector in the foregoing embodiment, where the method for obtaining a bi-color image includes the following steps:
s31: the bicolor focal plane detector prepared by the embodiment is utilized to detect and output a wide waveband image with the working waveband of 0.9-1.7 mu m and a first narrow waveband image with the working waveband of 1.3-1.7 mu m;
s32: respectively carrying out double-time image amplification processing on the wide-band image and the first narrow-band image along the direction vertical to the extension direction of the monochromatic filter membrane by using an image amplification processing method to correspondingly obtain a full-size wide-band image and a full-size first narrow-band image;
s33: and removing a full-size first narrow-band image with the working wave band of 1.3-1.7 mu m from a full-size wide-band image with the working wave band of 0.9-1.7 mu m to obtain a full-size second narrow-band image with the working wave band of 0.9-1.3 mu m, thereby obtaining two full-size narrow-band images, wherein the removing method is to subtract the full-size first narrow-band image from a beta-times full-size wide-band image to obtain the full-size second narrow-band image, and the beta value is the ratio of the average value of the first narrow-band image output by the two-color focal plane detector to the average value of the wide-band image under the light source irradiation condition that the working wave band is within 1.3-1.7 mu m, wherein the average value of the images is the average value of all pixel values in the images.
As a preferred embodiment of the present invention: the image amplification processing method is any one of four methods, namely nearest neighbor interpolation, linear interpolation, cubic spline interpolation and deep learning.
In the embodiment of the invention: preferably, the image magnification processing method is a cubic spline interpolation method.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art. The present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
While the preferred embodiments of the present invention have been described in detail with reference to the accompanying drawings, the present invention is not limited to the above embodiments, and various changes, which relate to the related art known to those skilled in the art and fall within the scope of the present invention, can be made within the knowledge of those skilled in the art without departing from the gist of the present invention.
Many other changes and modifications can be made without departing from the spirit and scope of the invention. It is to be understood that the invention is not to be limited to the specific embodiments, but only by the scope of the appended claims.

Claims (9)

1. A manufacturing method of a bicolor focal plane detector is characterized by comprising the following steps:
s11: plating a monochromatic filter membrane in comb-shaped periodic arrangement on a substrate to form a micro-filter array;
s12: adhering the micro light filter plate array to a focal plane of a focal plane detector to form a double-color focal plane detector, wherein the working wave bands of the substrate and the focal plane detector have an intersection wave band I, and the working wave band of the single-color light filter membrane and the intersection wave band I have an intersection wave band II;
the micro-filter plate array is adhered to the focal plane detector, and the alignment direction of the micro-filter plate array and the focal plane detector is any one of the two directions of alignment along the horizontal direction of the focal plane detector and alignment along the vertical direction of the focal plane detector;
the method is characterized in that the micro-fluorescence sheet array is adhered to the focal plane of the focal plane detector to form a double-color focal plane detector, and comprises the following steps:
s21: coating ultraviolet sensitive glue with the thickness of less than 100nm on a focal plane of the focal plane detector;
s22: a working light source is formed by adding an optical filter in front of an LED light source, wherein the working waveband of the optical filter is positioned in the intersection waveband I and does not intersect with the working waveband of the monochromatic filter film;
s23: under the irradiation of the working light source, adjusting the position and the angle of the micro-filter plate array to ensure that the micro-filter plate array is aligned with the focal plane pixel of the focal plane detector;
s24: and curing the micro-fluorescence plate array and the focal plane of the focal plane detector together by using an ultraviolet lamp for exposure.
2. The method for manufacturing the bicolor focal plane detector of claim 1, wherein the plurality of monochromatic filter films are arranged on the surface of the substrate in a comb-shaped period, and the width of a single monochromatic filter film is equal to 1/2 of the arrangement period.
3. The method of making a dual color focal plane detector of claim 1, wherein the thickness of the substrate is 0.1-2.0 mm.
4. The method for manufacturing a bicolor focal plane detector of claim 1, wherein the focal plane detector is any one of a visible-near infrared focal plane detector, a visible-short wave infrared focal plane detector and a short wave infrared focal plane detector.
5. The method for manufacturing a bi-color focal plane detector of claim 1, wherein the micro-filter array is adhered to the focal plane of the focal plane detector, and the adhering surface of the micro-filter array is any one of a surface with the monochromatic filter film and a surface without the monochromatic filter film.
6. The method of making a dual color focal plane detector of claim 1, wherein the focal plane along the focal plane detector is a focal plane of the dual color focal plane detectorThe extension direction of the monochromatic filter coating is consistent with the horizontal direction of the focal plane detector, and the monochromatic filter coating and the n of the focal plane detector are single1Line pixels aligned, n1Is a positive integer.
7. The method for manufacturing a bi-color focal plane detector of claim 1, wherein the alignment is performed along the vertical direction of the focal plane detector, the extending direction of the single-color filter is consistent with the vertical direction of the focal plane detector, and the single-color filter and the n-type focal plane detector are aligned2Column pixels aligned, n2Is a positive integer.
8. A bi-color image acquisition method, characterized by comprising the steps of:
s31: the dichromatic focal plane detector prepared by the method for manufacturing a dichromatic focal plane detector according to any one of claims 1 to 7, wherein the pixels which are not acted by the monochromatic filter film output a broadband image, and the pixels which are acted by the monochromatic filter film output a first narrow-band image, so that the broadband image and the first narrow-band image are obtained;
s32: respectively carrying out double-time image amplification processing on the wide-band image and the first narrow-band image along a direction perpendicular to the extension direction of the monochromatic filter film by using an image amplification processing method to correspondingly obtain a full-size wide-band image and a full-size first narrow-band image;
s33: and removing the full-size first narrow-band image from the full-size wide-band image to obtain a full-size second narrow-band image, so as to obtain two full-size narrow-band images, wherein the removing method is to subtract the full-size first narrow-band image from a beta-fold full-size wide-band image to obtain the full-size second narrow-band image, the beta value is a ratio of an average value of the first narrow-band image output by the two-color focal plane detector to an average value of the wide-band image under a light source irradiation condition that a working band is within a band of the monochromatic filter film, and the image average value is an average value of all pixel values in the image.
9. The bi-color image acquisition method according to claim 8, wherein the image enlargement processing method is any one of four methods of nearest neighbor interpolation, linear interpolation, cubic spline interpolation, and deep learning.
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