CN111653486A - Method for improving thermal shock reliability of copper-clad ceramic substrate - Google Patents
Method for improving thermal shock reliability of copper-clad ceramic substrate Download PDFInfo
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- CN111653486A CN111653486A CN202010372412.3A CN202010372412A CN111653486A CN 111653486 A CN111653486 A CN 111653486A CN 202010372412 A CN202010372412 A CN 202010372412A CN 111653486 A CN111653486 A CN 111653486A
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- 239000000919 ceramic Substances 0.000 title claims abstract description 86
- 239000000758 substrate Substances 0.000 title claims abstract description 77
- 238000000034 method Methods 0.000 title claims abstract description 43
- 230000035939 shock Effects 0.000 title claims abstract description 30
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 238000000059 patterning Methods 0.000 claims abstract description 7
- 239000012535 impurity Substances 0.000 claims abstract description 6
- 238000005530 etching Methods 0.000 claims description 10
- 229910000679 solder Inorganic materials 0.000 claims description 9
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 8
- 235000011089 carbon dioxide Nutrition 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000005237 degreasing agent Methods 0.000 claims description 2
- 239000013527 degreasing agent Substances 0.000 claims description 2
- 238000004321 preservation Methods 0.000 claims 2
- 230000000052 comparative effect Effects 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000008646 thermal stress Effects 0.000 description 5
- 238000005336 cracking Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005219 brazing Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4864—Cleaning, e.g. removing of solder
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- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Ceramic Products (AREA)
Abstract
The invention relates to a method for improving the thermal shock reliability of a copper-clad ceramic substrate, which comprises the following steps: a, an extremely cold treatment stage: removing impurities from the copper-clad ceramic substrate product subjected to the patterning process, and then placing the copper-clad ceramic substrate product in an environment with the temperature of-55 to-75 ℃ for 2 to 3 min; b, slow temperature rise stage: the heating rate is 0.4-0.8 ℃/min, the temperature is raised to 20 +/-5 ℃, and the time is 2-3 hours, so that the temperature of the copper-clad ceramic substrate product is raised; c, room temperature treatment stage: placing the copper-clad ceramic substrate product in a temperature environment of 20 +/-5 ℃ for 2-3 min; d, sequentially placing the products in the step C in the step A, B, C environment, and circularly operating for 3-10 times. The method for improving the thermal shock reliability of the copper-clad ceramic substrate is simple to operate and wide in applicability, and the thermal shock resistance of the copper-clad ceramic substrate treated by the method is improved by 50% through experimental comparison. Meanwhile, the treatment method can be adapted to the existing process, and the cold and hot impact reliability of the copper-clad ceramic substrate is compositely enhanced.
Description
Technical Field
The invention relates to the technical field of semiconductor substrate preparation, relates to a method for improving the performance of a copper-clad ceramic substrate, and particularly relates to a method for improving the thermal shock reliability of the copper-clad ceramic substrate.
Background
The miniaturized high-voltage high-power module is one of important development directions of semiconductor devices, and in the design of the semiconductor devices, along with the reduction of the size, the power density of chips is increased rapidly, so that new requirements on the reliability of module heat dissipation packaging are provided. The ceramic copper-clad substrate is the most excellent packaging material of a power module in the field of power electronics, and can quickly dissipate the heat of a chip to the outside due to the high heat conduction characteristic of the ceramic copper-clad substrate, and is generally used as a lining plate of the chip.
In two most important production processes of ceramic metallization, a direct copper-clad ceramic substrate (DCB) is formed by directly cladding copper on ceramic by using oxygen-containing eutectic liquid of the copper; an active metal brazing ceramic substrate (AMB) is formed by sintering a ceramic plate and a metal copper foil together using a brazing material. Compared with a direct copper-clad ceramic substrate, the active metal brazing ceramic substrate has higher reliability.
The obvious difference of the thermal expansion coefficients of the copper ceramics leads the ceramic side of the solder bonding layer of the AMB copper-clad ceramic substrate to easily generate micro-cracks under the action of thermal stress, the metal side is easily warped, finally the cracks are expanded, and the substrate is cracked and fails. Because of the characteristics of the AMB process, modification of the solder or the ceramic surface is mostly adopted at present to reduce voids and pores of a solder bonding layer after sintering and to set an etching step to enhance the thermal shock reliability of the copper-clad ceramic substrate, but the problems of large residual thermal stress, concentrated distribution of thermal stress and the like after ceramic metallization cannot be solved, so that the enhancement is limited, and the semiconductor industry has higher and higher requirements on the thermal shock reliability of the ceramic substrate.
Therefore, it is necessary to provide a new method for improving the thermal shock reliability of the copper-clad ceramic substrate.
Disclosure of Invention
In order to solve the defects of the prior art, the invention provides a method for improving the thermal shock reliability of a copper-clad ceramic substrate, which comprises two circulating treatment processes of low-temperature treatment and normal-temperature treatment, and can be matched with the prior art to compositely enhance the thermal shock reliability of the copper-clad ceramic substrate. In order to achieve the purpose, the invention is implemented by the following technical scheme:
the method for improving the thermal shock reliability of the copper-clad ceramic substrate, provided by the invention, is carried out after a patterning process, and comprises the following steps: a, an extremely cold treatment stage: cleaning surface dirt and impurities of the copper-clad ceramic substrate product subjected to the patterning process, and then placing the copper-clad ceramic substrate product in a temperature environment of-55 to-75 ℃ for 2 to 3 min; b, slow temperature rise stage: the heating rate is 0.4-0.8 ℃/min, the temperature is raised to 20 +/-5 ℃, the time is 2-3 hours, and the temperature of the copper-clad ceramic substrate product subjected to ultra-cold treatment is raised to 20 +/-5 ℃; c, room temperature treatment stage: placing the copper-clad ceramic substrate product in a temperature environment of 20 +/-5 ℃ for 2-3 min; d, sequentially placing the products in the step C in the environment described in the step A, B, C, and circularly operating for 3-10 times.
In the stage of extremely cold treatment in the step A, the treatment temperature is theoretically lower, the effect is better, but in actual operation, the cost is higher when the ambient temperature is set to be lower than-75 ℃, and the tensile stress generated by the copper layer is too large due to the fact that the temperature is too low and the rapid cooling is carried out, so that the solder bonding layer can generate cracks directly, which is unfavorable for enhancing the cold-hot circulation reliability of the copper-clad plate; the temperature of-55 ℃ is the highest limit temperature of the extremely cold treatment stage, and if the treatment temperature is further increased, the treatment effect is reduced, and the same effect is difficult to achieve.
The treatment time is 2-3min, which is the time for the product to reach the appropriate ambient temperature and is determined by experiments. The treatment time is too short, and the effect is not good; too long a processing time, limited product performance gain, and too long a time also leads to reduced efficiency.
In step B, the normal temperature is a temperature which is easily attained and easily controlled, contributing to enhancement of practical operability. In addition, the treatment is carried out in a slow temperature rise stage.
In the step D, the cycle times are too many, the product performance gain degree is limited, and the efficiency is also reduced.
After the treatment of the steps A-B-C, namely, the ultra-cold treatment, the slow heating treatment and the normal temperature treatment, the copper layer and the solder bonding layer of the fast ultra-cold copper clad laminate generate tensile stress, and after the slow heating treatment and the normal temperature treatment, the prestress is formed on the copper layer and the solder bonding layer. Therefore, when the copper-ceramic thermal shock is carried out at the subsequent temperature of 20-300 ℃, the thermal stress generated by the mismatching of the thermal expansion coefficients of the copper and the ceramic is firstly counteracted with the prestress and then acts on the copper-ceramic interface of the copper-clad plate, so that the negative influence generated by the thermal stress is weakened. Therefore, the cold and heat shock resistance of the product is enhanced by the method of the invention.
Preferably, in the step a, the surface of the copper-clad ceramic substrate product is cleaned from dirt and impurities by using a degreasing agent and pure water. In the aspect of realizing the ambient temperature, the ambient temperature can be reached and maintained by means of dry ice and an incubator.
Preferably, the temperature environment in the step C is preferably 20 to 25 ℃, and may be a normal temperature environment.
In step D, the number of the circulating operations is preferably 5-7.
Preferably, the thicknesses of the ceramic substrate, the patterned surface and the non-patterned surface in the copper-clad ceramic substrate product are respectively 1.0mm, 0.3mm and 0.25 mm.
Preferably, the copper-clad ceramic substrate product has an etching step, and is combined with the treatment method to achieve optimal cold and heat shock resistance.
Preferably, the surface of the ceramic substrate or the solder in the copper-clad ceramic substrate product is modified, for example, the surface of the aluminum nitride ceramic plate is roughened by adopting an alkaline solution, a mixed acid solution or a plasma ion beam, so that the mechanical embedding force between the metal solder and the ceramic substrate is enhanced.
Preferably, the implementation of the steps A-B-C and the implementation of the circulation in the step D are realized by placing the copper-clad ceramic substrate product in a dry ice incubator, controlling the temperature to be-55 to-75 ℃, keeping the temperature for 2 to 3min, allowing the dry ice to gradually and completely volatilize after the use for 2 to 3h, keeping the temperature for 2 to 3min until the room temperature, and continuously and repeatedly adding the dry ice in batches to realize the circulation operation.
The invention has the following beneficial effects:
the method for improving the thermal shock reliability of the copper-clad ceramic substrate is simple to operate and wide in applicability, and the thermal shock resistance of the copper-clad ceramic substrate treated by the method is improved by 50% through experimental comparison. Meanwhile, the treatment method can be adapted to the existing process, and the cold and hot impact reliability of the copper-clad ceramic substrate is compositely enhanced.
Drawings
FIG. 1 is a schematic flow chart of the method for improving the thermal shock reliability of the copper-clad ceramic substrate in the present invention.
Detailed Description
The following embodiments are implemented on the premise of the technical scheme of the present invention, and give detailed implementation modes and specific operation procedures, but the protection scope of the present invention is not limited to the following embodiments.
The reagents and starting materials used in the present invention are commercially available or can be prepared according to literature procedures. The experimental procedures, in which specific conditions are not noted in the following examples, are generally carried out according to conventional conditions or according to conditions recommended by the manufacturers.
Example 1
The method for improving the thermal shock reliability of the copper-clad ceramic substrate in the embodiment comprises the following steps according to the figure 1:
a, an extremely cold treatment stage: cleaning surface dirt and impurities of the copper-clad ceramic substrate product after the patterning process, and then placing the copper-clad ceramic substrate product in a temperature environment of-55 to-75 ℃ for 2 to 3 min. The temperature in the step can be achieved and maintained by means of dry ice and an incubator.
B, slow temperature rise stage: the heating rate is 0.4 ℃/min-0.8 ℃/min, the temperature is raised to 20 +/-5 ℃, and the time is 2-3 h;
c, room temperature stage: and C, placing the product obtained in the step B in a temperature environment of 20 +/-5 ℃ for 2-3min, or directly performing in a normal temperature environment.
D, sequentially placing the products in the step C in the environment described in the step A, B, C, and circularly operating for 3-10 times.
In this embodiment, the copper-clad ceramic substrate product after the patterning process is an AMB aluminum nitride copper-clad ceramic substrate product, and has an etching step, a ceramic substrate/patterned surface/non-patterned surface thickness: 1.0/0.3/0.25 mm.
Example 2
In the second embodiment, the only difference from the first embodiment is that no etching step is left on the AMB aluminum nitride copper clad ceramic substrate product, and the rest is the same as the first embodiment.
Comparative example 1
The copper-clad ceramic substrate product in this comparative example was the same as that in example 1, and was an AMB aluminum nitride copper-clad ceramic substrate product having an etching step, a ceramic substrate/patterned surface/non-patterned surface thickness: 1.0/0.3/0.25mm, with the difference that the treatment according to the first method has not been carried out.
Comparative example 2
The copper-clad ceramic substrate product in this comparative example was the same as that of example 2, and was an AMB aluminum nitride copper-clad ceramic substrate product, with no etching step left, and with no thickness of ceramic substrate/patterned surface/non-patterned surface: 1.0/0.3/0.25mm, without being subjected to the method of the first paragraph.
Example 3
This example compares the evaluation of the thermal shock reliability of the copper-clad ceramic substrate products in the above examples and comparative examples.
The cold and hot impact temperatures are respectively set to be 20 ℃ and 300 ℃, and the product is alternately placed in cold water at 20 ℃ for 1min and a heating plate at 300 ℃ for 2min for carrying out cold and hot impact experiments. In the first ten cold and hot impact processes, ultrasonic scanning flaw detection (SAM) tests are carried out every five times, and then SAM tests are carried out every two times until the copper-clad plate is warped and cracked.
The experimental results of the examples and comparative examples are shown in table 1: the temperature treatment and etching step combined mode in the embodiment 1 has the optimal reliability of cold and heat shock; secondly, the product is a product which only has an etching step and is not subjected to temperature treatment; the reliability of the product cold and hot impact is far lower than that of the product which is only subjected to temperature treatment and is not subjected to the temperature treatment and the cold and hot impact.
TABLE 1 summary of the number of cold and hot impacts on warpage, cracking failure for the examples and comparative products
| Numbering | Number of cold and hot impacts/times when warping and cracking fail |
| Example 1 | 40 |
| Comparative example 1 | 30 |
| Example 2 | 24 |
| Comparative example 2 | 16 |
According to the results, compared with the product subjected to only step etching treatment in the comparative example 1, the cycle number of the product in the example 1 is increased by 33% until cracking, and compared with the product in the comparative example 2, the cycle number of the product in the example 2 until cracking is increased by 50%, so that the cold and heat shock reliability of the copper-clad ceramic substrate is obviously improved after the product is treated by the method provided by the invention.
While the preferred embodiments of the present invention have been described in detail, it will be understood by those skilled in the art that the invention is not limited thereto, and that various changes and modifications may be made without departing from the spirit of the invention, and the scope of the appended claims is to be accorded the full scope of the invention.
Claims (8)
1. A method for improving the thermal shock reliability of a copper-clad ceramic substrate is characterized by being carried out after a patterning process and comprising the following steps of:
a, an extremely cold treatment stage: cleaning surface dirt and impurities of the copper-clad ceramic substrate product subjected to the patterning process, and then placing the copper-clad ceramic substrate product in a temperature environment of-55 to-75 ℃ for 2 to 3 min;
b, slow temperature rise stage: the heating rate is 0.4-0.8 ℃/min, the temperature is raised to 20 +/-5 ℃, the time is 2-3 hours, and the temperature of the copper-clad ceramic substrate product subjected to ultra-cold treatment is raised to 20 +/-5 ℃;
c, room temperature treatment stage: placing the copper-clad ceramic substrate product in a temperature environment of 20 +/-5 ℃ for 2-3 min;
d, sequentially placing the products in the step C in the environment described in the step A, B, C, and circularly operating for 3-10 times.
2. The method for improving the thermal shock reliability of the copper-clad ceramic substrate according to claim 1, wherein:
and B, in the step A, cleaning dirt and impurities on the surface of the copper-clad ceramic substrate product by using a degreasing agent and pure water.
3. The method for improving the thermal shock reliability of the copper-clad ceramic substrate according to claim 1, wherein:
wherein the temperature environment in the step C is 20-25 ℃.
4. The method for improving the thermal shock reliability of the copper-clad ceramic substrate according to claim 1, wherein:
wherein, in the step D, the cycle operation times are 5-7.
5. The method for improving the thermal shock reliability of the copper-clad ceramic substrate according to claim 1, wherein:
the thicknesses of the ceramic substrate, the patterned surface and the non-patterned surface in the copper-clad ceramic substrate product are respectively 1.0mm, 0.3mm and 0.25 mm.
6. The method for improving the thermal shock reliability of the copper-clad ceramic substrate according to claim 1, wherein:
wherein, the copper-clad ceramic substrate product has an etching step.
7. The method for improving the thermal shock reliability of the copper-clad ceramic substrate according to claim 1, wherein:
and modifying the surface of the ceramic substrate or the solder in the copper-clad ceramic substrate product.
8. The method for improving the thermal shock reliability of the copper-clad ceramic substrate according to claim 1, wherein:
during treatment, the copper-clad ceramic substrate product is placed in a dry ice incubator, the temperature is controlled to be-55 ℃ to-75 ℃, after heat preservation is carried out for 2-3min, the dry ice is gradually and completely volatilized for 2-3h, the heat preservation is carried out for 2-3min when the temperature is up to the room temperature, and the circulation operation is realized by continuously and repeatedly adding batches of dry ice.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114501820A (en) * | 2022-02-21 | 2022-05-13 | 青州云领电子科技有限公司 | Preparation process and product of ceramic-based circuit board |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106328543A (en) * | 2016-08-24 | 2017-01-11 | 浙江德汇电子陶瓷有限公司 | Manufacturing method of metal-ceramic composite substrate and composite substrate manufactured by manufacturing method |
| KR20180052449A (en) * | 2016-11-10 | 2018-05-18 | 주식회사 아모센스 | Ceramic board and manufacturing method thereof |
| CN109153594A (en) * | 2016-07-04 | 2019-01-04 | 日本电气硝子株式会社 | disk-shaped glass and its manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109153594A (en) * | 2016-07-04 | 2019-01-04 | 日本电气硝子株式会社 | disk-shaped glass and its manufacturing method |
| CN106328543A (en) * | 2016-08-24 | 2017-01-11 | 浙江德汇电子陶瓷有限公司 | Manufacturing method of metal-ceramic composite substrate and composite substrate manufactured by manufacturing method |
| KR20180052449A (en) * | 2016-11-10 | 2018-05-18 | 주식회사 아모센스 | Ceramic board and manufacturing method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114501820A (en) * | 2022-02-21 | 2022-05-13 | 青州云领电子科技有限公司 | Preparation process and product of ceramic-based circuit board |
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