CN111650429A - Magnetic sensing chip, temperature compensation current sensor and preparation method thereof - Google Patents
Magnetic sensing chip, temperature compensation current sensor and preparation method thereof Download PDFInfo
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- CN111650429A CN111650429A CN202010495276.7A CN202010495276A CN111650429A CN 111650429 A CN111650429 A CN 111650429A CN 202010495276 A CN202010495276 A CN 202010495276A CN 111650429 A CN111650429 A CN 111650429A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/32—Compensating for temperature change
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
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Abstract
Magnetic sensing chip, temperature compensation current sensor and preparation method thereof, temperature compensation current sensor includes: the magnetic-field-focusing circuit comprises a magnetic-field-focusing ring, a feedback coil wound on the magnetic-field-focusing ring, a magnetic sensing chip arranged at the notch of the magnetic-field-focusing ring, and a magnetic balance circuit connected with the magnetic sensing chip and the feedback coil; the magnetic sensing chip comprises a tunnel junction magneto-resistance element and a thermistor, the tunnel junction magneto-resistance element forms a full-bridge structure, the thermistor is located on an electrode layer of the tunnel junction magneto-resistance element, the electrode layer is a ruthenium metal layer or ruthenium metal in the electrode layer, the thermistor is a ruthenium resistor, the thermistor is connected with a temperature compensation circuit, a feedback coil outputs current signals to the temperature compensation circuit, and the temperature compensation circuit is used for outputting after compensating detection results according to the ruthenium resistor and signals output by the feedback coil. According to the invention, the thermosensitive element is integrated in the magnetic sensing chip, the temperature acquisition area is closer to the magnetic field detection area, the temperature information fed back is more accurate, and other materials and process difficulties cannot be additionally increased.
Description
Technical Field
The invention belongs to the technical field of current sensing, and particularly relates to a current sensor capable of performing temperature compensation and a magnetic sensing chip used by the current sensor.
Background
The magnetic balance type current sensor based on the zero magnetic flux principle has the advantages of high sensitivity, wide measurement range and the like, and is widely applied to the field of current measurement. However, due to the influence of the temperature characteristics of the magnetic field detection part and the feedback coil winding, the sensitivity of the magnetic balance type current sensor is influenced by the change of the environmental temperature, and the measurement accuracy of the current sensor is further influenced. For this reason, temperature drift compensation needs to be performed on the current sensor to ensure the measurement accuracy of the current sensor at different temperatures.
In a magnetic balance type current sensor, a magnetic sensing chip is generally installed in an air gap of a feedback coil winding, the magnetic sensing chip and the feedback coil winding are main devices causing temperature drift of the current sensor, and in order to obtain accurate temperature information of a detection area, a heat sensitive device (temperature sensing device) for feeding back the temperature information should be as close as possible to the magnetic sensing chip and the feedback coil winding so as to compensate the temperature drift of the current sensor. A more common temperature compensation means is to arrange a thermistor in the current sensor, collect the ambient temperature by using the thermistor, and arrange a temperature compensation circuit on the circuit board of the current sensor to perform temperature compensation on the output of the current sensor, so as to suppress the temperature drift of the current sensor. In order to simplify the production process of the current sensor, the thermistor is generally mounted on a circuit board of the current sensor, and the thermistor is far away from a magnetic sensing chip and a feedback coil winding, so that the temperature of a zero magnetic flux detection area of the current sensor cannot be accurately reflected, and the improvement effect on the measurement precision is limited. If the thermistor is integrated in the magnetic sensing chip, the heat sensitive device can be closer to the magnetic sensing chip and the feedback coil, so that the temperature information of the detection area can be more accurately reflected, and the temperature compensation of the current sensor is more accurate. However, the current thermistor is basically made of metal materials such as platinum, copper, nickel and the like, and because the material of the thermistor is different from that of the magnetic sensing chip, the thermistor is integrated in the magnetic sensing chip, so that the complexity of the magnetic sensing chip preparation process is undoubtedly increased, and the production cost of the current sensor is increased.
Disclosure of Invention
The invention aims to provide a magnetic sensing chip with high temperature compensation accuracy.
Another object of the present invention is to provide a current sensor which is simple to manufacture and can perform temperature compensation.
In order to achieve the first object, the invention adopts the following technical solutions:
magnetic sensing chip, including tunnel junction magneto resistor element and the thermistor that forms full-bridge structure, thermistor is located on the electrode layer of tunnel junction magneto resistor element, the electrode layer has ruthenium metal for in ruthenium metal layer or the electrode layer, thermistor is ruthenium resistance.
Further, the tunnel junction magnetoresistive element may be replaced with a GMR cell.
In order to achieve the second object, the invention adopts the following technical solutions:
a temperature compensated current sensor comprising: the magnetic circuit comprises a magnetic gathering ring, a feedback coil wound on the magnetic gathering ring, a magnetic sensing chip arranged at the notch of the magnetic gathering ring, and a magnetic balance circuit connected with the magnetic sensing chip and the feedback coil; the magnetic sensing chip is the magnetic sensing chip, the thermistor is connected with the temperature compensation circuit, the feedback coil outputs current signals to the temperature compensation circuit, and the temperature compensation circuit is used for compensating and outputting detection results according to the signals output by the ruthenium resistor and the feedback coil.
According to the technical scheme, the ruthenium resistor is used as the thermosensitive element, the ruthenium element is one of materials for preparing the tunnel junction magneto-resistance element, so that the ruthenium resistor can be integrated in the magnetic sensing chip, the thermosensitive resistor is integrated in the magnetic sensing chip, and the temperature acquisition area is closer to the magnetic field detection area, so that the temperature information fed back by the thermosensitive element is more accurate, the temperature information of the detection area can be more accurately reflected, and the temperature compensation of the current sensor is more accurate; and because the ruthenium element is used for preparing the tunnel junction magneto-resistance element, only a temperature detection area needs to be divided in the magnetic sensing chip and is connected with the temperature compensation circuit, the original preparation process of the magnetic sensing chip is basically unchanged, other equipment does not need to be added, and the production cost is favorably controlled.
Furthermore, the temperature compensation circuit comprises a temperature sampling circuit, a multiplication proportional circuit, an addition proportional circuit and a current sampling circuit; the temperature sampling circuit is connected with the ruthenium resistor, the temperature sampling circuit outputs signals to the multiplication proportional circuit, the multiplication proportional circuit outputs signals to the addition proportional circuit, the current sampling circuit collects current signals output by the feedback coil and outputs the current signals to the addition proportional circuit, the addition proportional circuit adds the signals output by the current sampling circuit and the signals output by the multiplication proportional circuit to obtain temperature compensation output signals finally output by the current sensor, and the temperature compensation output signals are simultaneously output to the multiplication proportional circuit.
By adopting the closed loop type temperature compensation circuit, the obtained feedback quantity error related to the temperature drift is less, and the temperature compensation is more stable and accurate.
Furthermore, the temperature compensation circuit comprises a temperature sampling circuit, an addition proportion circuit and a current sampling circuit; the temperature sampling circuit is connected with the ruthenium resistor, the temperature sampling circuit outputs signals to the addition proportion circuit, the current sampling circuit collects current signals output by the feedback coil and outputs the current signals to the addition proportion circuit, and the addition proportion circuit adds the signals output by the temperature sampling circuit and the signals output by the current sampling circuit to obtain temperature compensation output signals finally output by the current sensor.
And an open-loop temperature compensation circuit is adopted, so that the circuit structure is simple and the manufacturing cost is low.
The invention also provides a preparation method of the sensor chip, which comprises the following steps:
providing a substrate;
depositing a lower electrode layer, a pinning layer, a non-magnetic layer and a free layer on a substrate, wherein the lower electrode layer is prepared from a ruthenium material;
etching a magneto-resistance element region and a thermistor region according to the layout;
depositing an upper electrode layer, preparing an electrical connection structure which comprises a connection terminal and a wiring terminal connected with the magneto-resistor element, the thermistor and the feedback coil, and electrically interconnecting the magneto-resistor element and the thermistor;
and packaging the chip.
Drawings
In order to illustrate the embodiments of the present invention more clearly, the drawings that are needed in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings can be obtained by those skilled in the art without inventive effort.
FIG. 1 is a schematic structural view of example 1 of the present invention;
fig. 2 is a schematic structural diagram of a magnetic sensor chip according to embodiment 1 of the present invention;
FIG. 3 is a circuit block diagram of embodiment 1 of the present invention;
FIG. 4 is a signal block diagram of a temperature compensation circuit according to embodiment 1 of the present invention;
FIG. 5 is a circuit block diagram according to embodiment 2 of the present invention;
fig. 6 is a signal block diagram of a temperature compensation circuit according to embodiment 2 of the present invention.
Detailed Description
In order to make the aforementioned and other objects, features and advantages of the present invention more apparent, embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
Example 1
Referring to fig. 1 and 3, the current sensor of the present embodiment includes a feedback coil 1, a magnetism collecting ring 2, a magnetic sensing chip 3, a magnetic balance circuit 4, and a temperature compensation circuit 5. The feedback coil 1 is wound on the poly-magnetic ring 2 and used for generating a feedback magnetic field. The magnetism gathering ring 2 can be an annular opening-closing structure formed by a pair of arc iron cores arranged oppositely or a fixed structure formed by a C-shaped iron core. The magnetism gathering ring 2 can be made of silicon steel sheets, permalloy, nanocrystalline and other magnetic materials. A notch 2a is arranged on the magnetism gathering ring 2, the magnetic sensing chip 3 is arranged at the notch 2a of the magnetism gathering ring 2, and the magnetic sensing chip 3 is used for magnetic field detection.
The magnetic sensor chip 3 includes a magnetic sensor unit composed of a tunnel junction magnetoresistive element such as a TMR cell or a GMR cell. As shown in fig. 2, 4 sets of tunnel junction magnetoresistive elements (6, 7, 8, 9) are deposited on the substrate of the magnetic sensor chip 3 by magnetron sputtering technology and are provided with 4 connection terminals (12, 13, 14, 15), each set of tunnel junction magnetoresistive elements has the same structure and at least comprises a pinned layer, a free layer and a nonmagnetic layer, and the nonmagnetic layer is positioned between the pinned layer and the free layer. The magnetization direction of a pinning layer in the tunnel junction magneto-resistance element does not change along with the change of an external magnetic field, the magnetization direction of a free layer changes along with the change of the external magnetic field, and the resistance value of the tunnel junction magneto-resistance element changes along with the change of an included angle between the magnetization direction of the free layer and the magnetization direction of the pinning layer, so that the detection of the magnetic field is realized. The 4 groups of tunnel junction magneto-resistance elements are connected in a bridge mode to form a full-bridge structure and output differential voltage signals outwards, the 4 groups of tunnel junction magneto-resistance elements are respectively positioned on 4 bridge arms of the full-bridge structure, and each connecting terminal is respectively connected with two adjacent bridge arms. Of the 4 connection terminals, one pair of connection terminals (14, 15) is an input terminal, an external power supply provides a voltage drop for the magnetic sensing chip 3 through the input terminal to enable the full-bridge circuit to be in an operating state, the other pair of connection terminals (12, 13) is an output terminal, and the magnetic sensing chip 3 outputs a differential voltage signal related to a magnetic field through the output terminal. The substrate of the magnetic sensing chip 3 is also integrated with a ruthenium resistor 16 as a thermistor, the ruthenium resistor 16 is used for collecting temperature information of a magnetic field detection area, and the ruthenium resistor 16 is connected with the temperature compensation circuit 5 through connecting terminals (10 and 11). Ruthenium is one of materials for preparing an electrode layer and a pinning layer of a tunnel junction magnetoresistive element (TMR), and since the pinning layer is thin and is not suitable for preparing a thermistor, it is preferable to provide a ruthenium resistor in the electrode layer, and compared with a conventional thermistor made of platinum, copper, nickel, or the like, a thermistor is formed using the electrode layer, so that the thermistor is integrated in a magnetic sensor chip. The tunnel junction magnetoresistive element can also be replaced by GMR, which is a thermistor integrated on chip by adding a ruthenium material to the material for making the GMR cell.
As shown in FIG. 2, the magnetic sensing unit in the magnetic sensing chip 3 is connected to the magnetic balance circuit 4 via the output terminal, the magnetic balance circuit 4 of the present embodiment includes a differential voltage sampling circuit 4-1 and a push-pull emitter follower circuit 4-2, the differential voltage sampling circuit 4-1 is used for collecting the differential voltage signal V output by the magnetic sensing unitMThe push-pull emitter follower circuit 4-2 generates a current I to be output to the feedback coil 1 based on the differential voltage signalsSo that the feedback coil 1 generates a feedback magnetic field and the current sensor reaches a magnetic equilibrium state. The feedback coil 1 simultaneously outputs a current signal to the temperature compensation circuit 5.
The temperature compensation circuit 5 of the present embodiment is a closed-loop temperature compensation circuit, and includes a temperature sampling circuit 5-1, a multiplication ratio circuit 5-2, an addition ratio circuit 5-3, and a current sampling circuit 5-4. The temperature sampling circuit 5-1 is connected with the ruthenium resistor 16 and collects temperature sampling voltage output by the ruthenium resistor 16. The output end of the temperature sampling circuit 5-1 is connected with the multiplication proportion circuit 5-2, and outputs a temperature sampling signal V to the multiplication proportion circuit 5-2T. The current sampling circuit 5-4 collects current signals output by the feedback coil 1 and outputs the collected signals to the addition proportion circuit 5-3. The multiplying and proportional circuit 5-2 and the adding and proportional circuit 5-3 form a closed loop feedback, and the adding and proportional circuit 5-3 obtains a sampling signal V of the feedback coil 1 from the current sampling circuit 5-4 as shown in FIG. 4sAnd the sampling signal V of the feedback coil 1 is converted into a voltage signalsAdded to the signal output from the multiplication ratio circuit 5-2 (K)1Is the amplification factor of the addition proportional circuit) to obtain a temperature compensation output signal V finally output by the current sensor0Temperature compensated output signal V0And also output to a multiplying proportion circuit 5-2 for summing the temperature sampling signal VTPerforming multiplication (K)2Which is the amplification factor of the addition ratio circuit), and then output to the addition ratio circuit 5-3.
The working principle of this embodiment is explained below with reference to fig. 1:
as shown in fig. 1, when the current sensor is used for measuring, a measured conductor 20 passes through the magnetic gathering ring 2, and when a current flows through the measured conductor 20, a magnetic field a is generated around the measured conductor 20; the magnetic sensing chip 3 detects the magnetic field at the notch 2a of the magnetic gathering ring 2 and outputs a differential voltage signal VM(ii) a The magnetic balance circuit 4 collects the differential voltage signal V output by the magnetic sensing chip 3MAnd adjusting the input current I of the feedback coil 2S(ii) a Feedback coil 1 at current ISUnder the action of the magnetic field generating unit, a magnetic field B is generated in the magnetism gathering ring 2; when the differential voltage signal VMWhen the magnetic flux is zero, the magnetic field a generated by the tested conductor 20 and the magnetic field B generated by the magnetic convergence ring 2 reach a magnetic balance state, and the gap 2a of the magnetic convergence ring 2 has zero magnetic flux.
The preparation method of the sensor chip integrated with the thermistor in the embodiment is as follows:
providing a substrate;
depositing a lower electrode layer, a pinning layer, a non-magnetic layer and a free layer on a substrate, wherein the lower electrode layer is prepared from a ruthenium material;
etching a magneto-resistance element region and a thermistor region according to the layout;
depositing an upper electrode layer, preparing an electrical connection structure which comprises a connection terminal and a wiring terminal connected with the magneto-resistor element, the thermistor and the feedback coil, and electrically interconnecting the magneto-resistor element and the thermistor;
and packaging the chip.
Example 2
The present embodiment is different from embodiment 1 in that the temperature compensation circuit of the present embodiment is an open-loop temperature compensation circuit. As shown in fig. 5, the temperature compensation circuit of the present embodiment includes a temperature sampling circuit 5-1, an addition ratio circuit 5-3, and a current sampling circuit 5-4. The temperature sampling circuit 5-1 is connected with the ruthenium resistor 16 and collects temperature sampling voltage output by the ruthenium resistor 16. The current sampling circuit 5-4 is connected with the feedback coil 1 and used for collecting current signals output by the feedback coil 1. The output end of the current sampling circuit 5-4 and the output end of the temperature sampling circuit 5-1 are connected with the addition proportion circuit 5-3. As shown in FIG. 6, the addition ratio circuit 5-3 willTemperature sampling signal V output by temperature sampling circuit 5-1TAnd a sampling signal V of the feedback coil 1 output by the current sampling circuit 5-4sAdding (K)1Is the amplification factor of the addition proportional circuit), and the temperature compensation output signal V finally output by the current sensor is obtained0. In the embodiment, the open-loop temperature compensation circuit is used, the circuit structure is simpler than that of the closed-loop temperature compensation circuit, but the closed-loop temperature compensation circuit is added with a multiplication proportion circuit, so that the obtained feedback quantity error related to temperature drift is less, and the compensation is more stable and accurate. The magnetic balance circuit and the temperature compensation circuit of the present invention are the same as those of the current sensor using the common thermistor for temperature compensation, and are not the point of the present invention, and are not described herein again.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (6)
1. Magnetic sensing chip, including tunnel junction magneto resistor element and the thermistor that forms full-bridge structure, its characterized in that: the thermistor is positioned on an electrode layer of the tunnel junction magneto-resistance element, the electrode layer is a ruthenium metal layer or ruthenium metal is arranged in the electrode layer, and the thermistor is a ruthenium resistor.
2. The magnetic sensor chip of claim 1, wherein: the tunnel junction magnetoresistive element may be replaced with a GMR cell.
3. A temperature compensated current sensor comprising: the magnetic circuit comprises a magnetic gathering ring, a feedback coil wound on the magnetic gathering ring, a magnetic sensing chip arranged at the notch of the magnetic gathering ring, and a magnetic balance circuit connected with the magnetic sensing chip and the feedback coil;
the method is characterized in that: the magnetic sensing chip is the magnetic sensing chip of claim 1 or 2, the thermistor is connected to a temperature compensation circuit, the feedback coil outputs a current signal to the temperature compensation circuit, and the temperature compensation circuit is configured to compensate and output a detection result according to the ruthenium resistor and the signal output by the feedback coil.
4. The temperature-compensated current sensor of claim 3, wherein: the temperature compensation circuit comprises a temperature sampling circuit, a multiplication proportional circuit, an addition proportional circuit and a current sampling circuit; the temperature sampling circuit is connected with the ruthenium resistor, the temperature sampling circuit outputs signals to the multiplication proportional circuit, the multiplication proportional circuit outputs signals to the addition proportional circuit, the current sampling circuit collects current signals output by the feedback coil and outputs the current signals to the addition proportional circuit, the addition proportional circuit adds the signals output by the current sampling circuit and the signals output by the multiplication proportional circuit to obtain temperature compensation output signals finally output by the current sensor, and the temperature compensation output signals are simultaneously output to the multiplication proportional circuit.
5. The temperature-compensated current sensor of claim 3, wherein: the temperature compensation circuit comprises a temperature sampling circuit, an addition proportional circuit and a current sampling circuit; the temperature sampling circuit is connected with the ruthenium resistor, the temperature sampling circuit outputs signals to the addition proportion circuit, the current sampling circuit collects current signals output by the feedback coil and outputs the current signals to the addition proportion circuit, and the addition proportion circuit adds the signals output by the temperature sampling circuit and the signals output by the current sampling circuit to obtain temperature compensation output signals finally output by the current sensor.
6. The method for manufacturing a sensor chip according to claim 1 or 2, comprising the steps of:
providing a substrate;
depositing a lower electrode layer, a pinning layer, a non-magnetic layer and a free layer on a substrate, wherein the lower electrode layer is prepared from a ruthenium material;
etching a magneto-resistance element region and a thermistor region according to the layout;
depositing an upper electrode layer, preparing an electrical connection structure which comprises a connection terminal and a wiring terminal connected with the magneto-resistor element, the thermistor and the feedback coil, and electrically interconnecting the magneto-resistor element and the thermistor;
and packaging the chip.
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| CN202010495276.7A CN111650429A (en) | 2020-06-03 | 2020-06-03 | Magnetic sensing chip, temperature compensation current sensor and preparation method thereof |
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| CN112362941A (en) * | 2020-12-04 | 2021-02-12 | 中国电力科学研究院有限公司 | Annular current transformer and method for measuring current by using same |
| CN112649646A (en) * | 2020-12-23 | 2021-04-13 | 南方电网电力科技股份有限公司 | Giant magnetoresistance effect-based micro current sensor device and application method thereof |
| CN112964928A (en) * | 2021-02-24 | 2021-06-15 | 优利德科技(中国)股份有限公司 | Clamp-on ammeter without magnetism collecting iron core and automatic balance adjusting method |
| CN114236224A (en) * | 2021-12-15 | 2022-03-25 | 中国电力科学研究院有限公司 | Transformer core grounding current measurement system and method |
| CN116666036A (en) * | 2023-05-17 | 2023-08-29 | 珠海多创科技有限公司 | Demagnetizing module and current sensor |
| CN117347706A (en) * | 2023-10-23 | 2024-01-05 | 合肥工业大学 | Temperature drift compensation method for lattice type Hall heavy current sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112362941A (en) * | 2020-12-04 | 2021-02-12 | 中国电力科学研究院有限公司 | Annular current transformer and method for measuring current by using same |
| CN112362941B (en) * | 2020-12-04 | 2023-06-30 | 中国电力科学研究院有限公司 | Annular current transformer and current measuring method thereof |
| CN112649646A (en) * | 2020-12-23 | 2021-04-13 | 南方电网电力科技股份有限公司 | Giant magnetoresistance effect-based micro current sensor device and application method thereof |
| CN112964928A (en) * | 2021-02-24 | 2021-06-15 | 优利德科技(中国)股份有限公司 | Clamp-on ammeter without magnetism collecting iron core and automatic balance adjusting method |
| CN112964928B (en) * | 2021-02-24 | 2024-01-30 | 优利德科技(中国)股份有限公司 | Clamp ammeter without integrated magnet core and automatic balance adjustment method |
| CN114236224A (en) * | 2021-12-15 | 2022-03-25 | 中国电力科学研究院有限公司 | Transformer core grounding current measurement system and method |
| CN116666036A (en) * | 2023-05-17 | 2023-08-29 | 珠海多创科技有限公司 | Demagnetizing module and current sensor |
| CN116666036B (en) * | 2023-05-17 | 2024-02-13 | 珠海多创科技有限公司 | Demagnetizing module and current sensor |
| CN117347706A (en) * | 2023-10-23 | 2024-01-05 | 合肥工业大学 | Temperature drift compensation method for lattice type Hall heavy current sensor |
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