CN111640834B - Growth method of Al-rich component nitride material of aluminum substrate and aluminum substrate structure - Google Patents
Growth method of Al-rich component nitride material of aluminum substrate and aluminum substrate structure Download PDFInfo
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- CN111640834B CN111640834B CN202010560043.0A CN202010560043A CN111640834B CN 111640834 B CN111640834 B CN 111640834B CN 202010560043 A CN202010560043 A CN 202010560043A CN 111640834 B CN111640834 B CN 111640834B
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
Abstract
The embodiment of the application provides a growth method of an Al-rich nitride material of an aluminum substrate and an aluminum substrate structure. The method for growing the Al-rich nitride material on the aluminum substrate comprises the following steps: providing an aluminum substrate, and nitriding a polycrystalline AlN film layer on the upper surface of the aluminum substrate; depositing and growing an AlN nucleating layer on the polycrystalline AlN film layer; depositing and growing an AlN buffer layer on the AlN nucleating layer; and epitaxially growing an AlN film layer with high crystal quality on the AlN buffer layer. According to the embodiment of the application, the polycrystalline AlN film layer, the AlN nucleating layer, the AlN buffer layer and the AlN film layer with high crystal quality are sequentially grown on the aluminum substrate, so that the aluminum substrate structure of the Al-component-rich nitride material with low cost and high crystal quality is formed, the cost can be reduced, and the efficiency can be improved.
Description
Technical Field
The application relates to the technical field of LED luminescence, in particular to a growth method of an Al-rich component nitride material of an aluminum substrate and an aluminum substrate structure.
Background
In the LED light emitting device, the aluminum substrate structure thereof has a very important influence on the overall performance of the LED light emitting device. At present, in the prior art, other Al-rich nitride materials are formed on a substrate by adopting a chemical vapor deposition mode. However, it is inefficient and costly.
In view of the above problems, no effective technical solution exists at present.
Disclosure of Invention
An object of the embodiments of the present application is to provide a method for growing an Al-rich nitride material on an aluminum substrate and an aluminum substrate structure, which can improve efficiency and reduce cost.
In a first aspect, an embodiment of the present application provides a method for growing an Al-rich nitride material on an aluminum substrate, including the following steps:
providing an aluminum substrate, and nitriding a polycrystalline AlN film layer on the upper surface of the aluminum substrate;
depositing and growing an AlN nucleating layer on the polycrystalline AlN film layer;
depositing and growing an AlN buffer layer on the AlN nucleating layer;
and epitaxially growing an AlN film layer with high crystal quality on the AlN buffer layer.
Optionally, in the method for growing an Al-rich nitride material on an aluminum substrate according to the embodiment of the present application, the thickness of the aluminum substrate is 300um to 2000 um.
Optionally, in the method for growing an Al-rich nitride material on an aluminum substrate according to the embodiment of the present application, the thickness of the polycrystalline AlN film layer is 1nm to 200 nm.
Optionally, in the method for growing an Al-rich nitride material on an aluminum substrate according to the embodiment of the present application, the polycrystalline AlN film layer is a continuous two-dimensional film, or a discontinuous two-dimensional film arranged in a regular shape, or a continuous or discontinuous 3-dimensional structure film on the surface of the aluminum substrate.
Optionally, in the method for growing an Al-rich nitride material on an aluminum substrate according to the embodiment of the present application, the polycrystalline AlN film layer is a polycrystalline or amorphous material layer.
Optionally, in the method for growing an Al-rich nitride material on an aluminum substrate according to an embodiment of the present application, the step of nitriding a polycrystalline AlN film layer on an upper surface of the aluminum substrate includes:
the film is formed by chemical reaction of nitrogen atoms in nitrogen or cracked ammonia and Al atoms on the surface of an aluminum substrate.
Optionally, in the method for growing an Al-rich nitride material on an aluminum substrate according to an embodiment of the present application, the step of nitriding a polycrystalline AlN film layer on an upper surface of the aluminum substrate includes:
and sputtering an AlN target on the surface of the aluminum substrate to form a polycrystalline AlN film layer.
Optionally, in the method for growing an Al-rich nitride material on an aluminum substrate according to the embodiment of the present application, the AlN nucleation layer has a thickness of 3nm to 300nm, and the AlN nucleation layer is a continuous closed film or an open film.
Optionally, in the method for growing an Al-rich nitride material on an aluminum substrate according to an embodiment of the present application, the step of depositing a growth AlN nucleation layer on the polycrystalline AlN film layer includes:
and depositing and growing an AlN nucleating layer on the polycrystalline AlN film layer by adopting a sputtering or sol-gel synthesis mode.
In a second aspect, an embodiment of the present application further provides an aluminum substrate structure, including:
an aluminum substrate;
the polycrystalline AlN film layer is arranged on the upper surface of the aluminum substrate;
an AlN nucleating layer which is deposited and grown on the polycrystalline AlN film layer;
an AlN buffer layer which is deposited and grown on the AlN nucleating layer;
and the high-crystal-quality AlN film layer is arranged on the epitaxy on the AlN buffer layer.
As can be seen from the above, in the embodiments of the present application, a polycrystalline AlN film layer, an AlN nucleation layer, an AlN buffer layer, and an AlN film layer with high crystal quality are sequentially grown on an aluminum substrate, so as to form an aluminum substrate structure of an Al-rich nitride material with low cost and high crystal quality, which can reduce cost and improve efficiency.
Additional features and advantages of the present application will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by the practice of the embodiments of the present application. The objectives and other advantages of the application may be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments of the present application will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and that those skilled in the art can also obtain other related drawings based on the drawings without inventive efforts.
Fig. 1 is a flowchart of a method for growing an Al-rich nitride material on an aluminum substrate according to an embodiment of the present disclosure.
Fig. 2 is a schematic structural diagram of an aluminum substrate structure provided in an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present application without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. Meanwhile, in the description of the present application, the terms "first", "second", and the like are used only for distinguishing the description, and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
Referring to fig. 1, fig. 1 is a flow chart illustrating a method for growing an Al-rich nitride material on an aluminum substrate according to an embodiment of the present disclosure. The method for growing the Al-rich nitride material on the aluminum substrate comprises the following steps:
s101, providing an aluminum substrate, and nitriding a polycrystalline AlN film layer on the upper surface of the aluminum substrate;
s102, depositing and growing an AlN nucleating layer on the polycrystalline AlN film layer;
s103, depositing and growing an AlN buffer layer on the AlN nucleating layer;
and S104, epitaxially growing an AlN film layer with high crystal quality on the AlN buffer layer.
In step S101, the thickness of the aluminum substrate is 300um to 2000um, for example, 400um or 1000um, but it is not limited thereto. The thickness of the polycrystalline AlN film layer is 1nm to 200nm, for example, 10nm or 100nm, but it is not limited thereto. Wherein the polycrystalline AlN film layer is a continuous two-dimensional film, or a discontinuous two-dimensional film arranged in a regular shape, or a film having a continuous or discontinuous 3-dimensional structure on the surface of the aluminum substrate.
The polycrystalline AlN film layer is a polycrystalline or amorphous material layer.
The polycrystalline AlN film layer may be formed by nitriding with an ammonia source or nitrogen gas. Specifically, in some embodiments, this step 101 includes: the film is formed by chemical reaction of nitrogen atoms in nitrogen or cracked ammonia and Al atoms on the surface of an aluminum substrate.
Or in other embodiments, the step S101 includes: and sputtering an AlN target on the surface of the aluminum substrate to form a polycrystalline AlN film layer.
In step S102, the AlN nucleation layer may have a thickness of 3nm to 300nm, for example, 10nm or 100nm, but is not limited thereto. The AlN nucleation layer is a continuous closed film or an open film.
In some embodiments, this step S102 includes: and depositing and growing an AlN nucleating layer on the polycrystalline AlN film layer by adopting a sputtering or sol-gel synthesis mode. Of course, laser assisted deposition may also be used to grow AlN nucleation layers.
Wherein, in the step S103, an AlN buffer layer may be grown on the AlN nucleation layer using laser-assisted deposition.
In step S104, the thickness of the AlN film layer with high crystal quality is an AlN film layer with high crystal quality.
As can be seen from the above, in the embodiments of the present application, a polycrystalline AlN film layer, an AlN nucleation layer, an AlN buffer layer, and an AlN film layer with high crystal quality are sequentially grown on an aluminum substrate, so as to form an aluminum substrate structure of an Al-rich nitride material with low cost and high crystal quality, which can reduce cost and improve efficiency.
Referring to fig. 2, fig. 2 is a schematic structural diagram of an aluminum substrate structure in some embodiments of the present application, which is fabricated by using the Al-rich nitride material growth method of the aluminum substrate in the above embodiments. The aluminum substrate structure includes: an aluminum substrate 201, a polycrystalline AlN film 202, an AlN nucleation layer 203, an AlN buffer layer 204, and a high crystal quality AlN film 205. Wherein, the polycrystalline AlN film layer is arranged on the upper surface of the aluminum substrate 201; an AlN nucleation layer 203 that is deposited grown on the polycrystalline AlN film layer 202; an AlN buffer layer 204, which is deposited grown on the AlN nucleation layer 203; a high crystal quality AlN film 205 disposed epitaxially on the AlN buffer layer 204.
As can be seen from the above, in the embodiments of the present application, a polycrystalline AlN film layer, an AlN nucleation layer, an AlN buffer layer, and an AlN film layer with high crystal quality are sequentially grown on an aluminum substrate, so as to form an aluminum substrate structure of an Al-rich nitride material with low cost and high crystal quality, which can reduce cost and improve efficiency.
In this document, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions.
The above description is only an example of the present application and is not intended to limit the scope of the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (9)
1. A method for growing an Al-rich nitride material on an aluminum substrate is characterized by comprising the following steps:
providing an aluminum substrate, and nitriding a polycrystalline AlN film layer on the upper surface of the aluminum substrate;
depositing and growing an AlN nucleating layer on the polycrystalline AlN film layer;
depositing and growing an AlN buffer layer on the AlN nucleating layer;
epitaxially growing an AlN film layer with high crystal quality on the AlN buffer layer;
the step of nitriding a polycrystalline AlN film layer on the upper surface of the aluminum substrate comprises the following steps: and the film is formed by chemical reaction of nitrogen atoms in the cracked ammonia gas and Al atoms on the surface of the aluminum substrate.
2. The method of growing an Al-rich component nitride material of an aluminum substrate according to claim 1, wherein the thickness of the aluminum substrate is 300 to 2000 um.
3. The Al-rich component nitride material growth method of an aluminum substrate according to claim 1, wherein a thickness of the polycrystalline AlN film layer is 1nm to 200 nm.
4. The method for growing an Al-rich component nitride material on an aluminum substrate according to claim 1, wherein the polycrystalline AlN film layer is a continuous two-dimensional film, or a discontinuous two-dimensional film arranged in a regular shape, or a film of a continuous or discontinuous 3-dimensional structure on the surface of the aluminum substrate.
5. The Al-rich component nitride material growth method of an aluminum substrate according to claim 1, wherein the polycrystalline AlN film layer is a polycrystalline or amorphous material layer.
6. The method for growing an Al-rich nitride material on an Al substrate according to claim 1, wherein the step of nitriding a polycrystalline AlN film layer on the upper surface of the Al substrate comprises:
and sputtering an AlN target on the surface of the aluminum substrate to form a polycrystalline AlN film layer.
7. The method for growing an Al-rich component nitride material on an aluminum substrate according to claim 1, wherein the AlN nucleation layer has a thickness of 3nm to 300nm, and is a continuous closed film or an open film.
8. The Al-rich component nitride material growth method of an aluminum substrate of claim 7, wherein the step of depositing a growth AlN nucleation layer on the polycrystalline AlN film layer comprises:
and depositing and growing an AlN nucleating layer on the polycrystalline AlN film layer by adopting a sputtering or sol-gel synthesis mode.
9. An aluminum substrate structure prepared by the method of any one of claims 1-8, comprising:
an aluminum substrate;
the polycrystalline AlN film layer is arranged on the upper surface of the aluminum substrate;
an AlN nucleating layer which is deposited and grown on the polycrystalline AlN film layer;
an AlN buffer layer which is deposited and grown on the AlN nucleating layer;
and the high-crystal-quality AlN film layer is arranged on the epitaxy on the AlN buffer layer.
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| CN111261759A (en) * | 2020-02-17 | 2020-06-09 | 武汉大学 | Aluminum nitride epitaxial structure and growth method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4538476B2 (en) * | 2007-08-27 | 2010-09-08 | 独立行政法人理化学研究所 | Method for forming a semiconductor structure |
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102412123A (en) * | 2011-11-07 | 2012-04-11 | 中山市格兰特实业有限公司火炬分公司 | Preparation method for aluminium nitride |
| CN103031596A (en) * | 2012-12-14 | 2013-04-10 | 中国电子科技集团公司第五十五研究所 | Epitaxial growth method of solar-blind UV (Ultraviolet) photocathode based on AlGaN (Aluminum Gallium Nitrogen) materials |
| CN103849853A (en) * | 2014-02-21 | 2014-06-11 | 中国科学院半导体研究所 | Method for relieving stress between silicon substrate and gallium nitride film during MOCVD (Metal Organic Chemical Vapor Deposition) process |
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