CN111628027B - 一种抗隐裂组件 - Google Patents

一种抗隐裂组件 Download PDF

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CN111628027B
CN111628027B CN202010514100.1A CN202010514100A CN111628027B CN 111628027 B CN111628027 B CN 111628027B CN 202010514100 A CN202010514100 A CN 202010514100A CN 111628027 B CN111628027 B CN 111628027B
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battery
welding
assembly
spalling
piece
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CN111628027A (zh
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姜亚帅
孙观
庄浩
严勋
黄国平
李菁楠
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CECEP Solar Energy Technology Zhenjiang Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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Abstract

本发明公开了一种抗隐裂高效组件，包括呈阵列分布的若干个电池片，所述电池片的正反面设有相互垂直的焊带，相邻电池片同面的焊带相互垂直，相邻电池片异面的焊带数量相同。本发明具有操作简单、兼容性好，抗隐裂效果优，通过电池上下密布横向与竖向焊带，避免上下平行设计导致的局部应力集中，非单侧集中极大降低了焊接点数量，还可以降低工艺制作难度；组件设计不仅更为美观，而且兼容多切设计，可进一步提升组件可靠性。

Description

一种抗隐裂组件
技术领域
本发明涉及一种抗隐裂组件。
背景技术
一直以来，传统石化的大规模使用推动工业水平不断进步、人民的生活水平不断提高，但使用不当、管理缺失导致环境污染愈加严重，并已严重威胁人类赖以生存得的家园，各政府机构亦不断采取强有力措施遏制污染，其中之一就是大力发展绿色能源，光伏组件可将太阳光直接转化为电能，无污染、可持续、效率高、易实现，因而近年来得以快速发展，目前中国累计装机量已突破130.25GW。
目前度电成本较高仍然是制约光伏占据能源主流市场的主要因素，唯有降本增效才能突破现有瓶颈。目前大规模量产的提效方法包括半片、多主栅及双面等技术，这导致组件单体功率大幅增加，目前已量产的组件单体功率已突破450W。
为降低成本，硅片厚度越来越薄，常规焊带作用方式即电池上下相同位置叠加相同规格焊带，主栅区域局部厚度大幅提升，流转、层压中焊带区域电池承受的应力显著高于其它区域，制程碎片风险随之增加。因此需进一步探究抗隐裂的高效组件。
发明内容
本发明的目的是为了解决以上现有技术的不足，提出了一种抗隐裂组件。
一种抗隐裂组件，包括呈阵列分布的若干个电池片，所述电池片的正反面设有相互垂直的焊带，相邻电池片同面的焊带相互垂直，相邻电池片异面的焊带数量相同。
优选的，所述电池片的边长介于156-210mm。
优选的，所述电池片的边长为156.75、158.75、161、166、180或210mm优选的，所述电池片正面焊带的数量为3-20根。
优选的，所述电池片反面焊带的数量为3-20根。
优选的，所述焊带的横截面形状为扁形、圆形、三角形或梯形。
优选的，所述电池片的厚度为100-180μm。
优选的，所述电池片的厚度为120-160μm。
有益效果：
本发明具有操作简单、兼容性好，抗隐裂效果优，通过电池上下密布横向与竖向焊带，避免上下平行设计导致的局部应力集中，非单侧集中极大降低了焊接点数量，还可以降低工艺制作难度；组件设计不仅更为美观，而且兼容多切设计，可进一步提升组件可靠性。
与传统的双面垂直焊带互联方式相比，本发明的单面焊点数量可以由上千个减少至几十个，可以大大的减少焊点数量，本发明中的双面焊点总数可以控制在数百以内。
且双面垂直焊接时，其焊点结构是：焊带-焊带-电池片；而本发明中的焊点结构为：焊带-电池片，其工艺难度大大降低，同时也降低了制程碎片风险。
附图说明
图1是一种抗隐裂组件的总体结构示意图；
图2是现有的一种焊带排布方式；
图3是一种抗隐裂的焊带排布方式；
图4是一种电池片的可选分布版型图一；
图5是一种电池片的可选分布版型图二；
图6是一种电池片的可选分布版型图三；
图7是一种电池片的可选分布版型图四；
1.焊带2.电池片。
具体实施方式
为了加深对本发明的理解，下面将结合实施例和附图对本发明作进一步详述，该实施例仅用于解释本发明，并不构成对本发明保护范围的限定。
如图1、3所示，一种抗隐裂组件，包括呈阵列分布的若干个电池片2，所述电池片2的正反面设有相互垂直的焊带1，相邻电池片2同面的焊带1相互垂直，相邻电池片2异面的焊带1数量相同。
首先在电池片的正反面分别设置多根横向、纵向的主栅，主栅上依次分段设计多个焊点，电池片2的正面焊带与背面焊带焊接方向垂直。
组件设计需两串相邻电池交替连接成块，相邻电池正面焊接数量交替，相邻电池背面焊接数量交替，前一片电池背面的焊带数量与下一片电池的正面焊带数量相同。
电池片正面焊带数量介于3-20根，所述电池背面数量介于3-20根，电池片为边长尺寸介于156-210mm，优选156.75、158.75、161、166、180、210mm，所述电池片可以为1/n整片(n为正整数，数量介于1-10)，所述电池厚度为100-180μm。
单根主栅焊点数量介于3-15；焊带结构为扁焊带；所述扁焊带的厚度介于0.05-0.7mm。
图4-图7是四种电池片的可选分布结构示意图。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (8)

1.一种抗隐裂组件，其特征在于，包括呈阵列分布的若干个电池片，全部电池片的正反面均设有相互垂直的焊带，全部相邻电池片同面的焊带相互垂直，全部相邻电池片异面的焊带数量相同，相邻电池交替连接成块，前一片电池背面的焊带数量与下一片电池的正面焊带数量相同。
2.根据权利要求1所述的一种抗隐裂组件，其特征在于，所述电池片的边长介于156-210mm。
3.根据权利要求1所述的一种抗隐裂组件，其特征在于，所述电池片的边长为156.75、158.75、161、166、180或210mm。
4.根据权利要求1所述的一种抗隐裂组件，其特征在于，所述电池片正面焊带的数量为3-20根。
5.根据权利要求1所述的一种抗隐裂组件，其特征在于，所述电池片反面焊带的数量为3-20根。
6.根据权利要求1所述的一种抗隐裂组件，其特征在于，所述焊带的横截面形状为扁形、圆形、三角形或梯形。
7.根据权利要求1所述的一种抗隐裂组件，其特征在于，所述电池片的厚度为100-180μm。
8.根据权利要求7所述的一种抗隐裂组件，其特征在于，所述电池片的厚度为120-160μm。
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102339901A (zh) * 2011-07-30 2012-02-01 常州天合光能有限公司 太阳能电池组件低电阻连接方式及其制作工艺
CN103346187A (zh) * 2013-07-12 2013-10-09 宁波尤利卡太阳能科技发展有限公司 太阳能电池组件
CN207282507U (zh) * 2017-08-30 2018-04-27 福建钧石能源有限公司 一种光伏组件结构
CN110459636A (zh) * 2018-10-17 2019-11-15 协鑫集成科技股份有限公司 太阳能电池光伏模块及太阳能电池光伏组件

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102339901A (zh) * 2011-07-30 2012-02-01 常州天合光能有限公司 太阳能电池组件低电阻连接方式及其制作工艺
CN103346187A (zh) * 2013-07-12 2013-10-09 宁波尤利卡太阳能科技发展有限公司 太阳能电池组件
CN207282507U (zh) * 2017-08-30 2018-04-27 福建钧石能源有限公司 一种光伏组件结构
CN110459636A (zh) * 2018-10-17 2019-11-15 协鑫集成科技股份有限公司 太阳能电池光伏模块及太阳能电池光伏组件

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