CN111627898B

CN111627898B - Handicraft decorative lamp and manufacturing method thereof

Info

Publication number: CN111627898B
Application number: CN202010557752.3A
Authority: CN
Inventors: 孙波
Original assignee: Zibo Vocational Institute
Current assignee: Zibo Vocational Institute
Priority date: 2020-06-17
Filing date: 2020-06-17
Publication date: 2022-09-27
Anticipated expiration: 2040-06-17
Also published as: CN111627898A

Abstract

The invention provides a handicraft decorative lamp and a manufacturing method thereof, wherein the decorative lamp comprises: the LED chips comprise an LED epitaxial layer, a light reflecting layer and a black silicon layer which are sequentially arranged on the backlight surface and the side wall of the LED epitaxial layer, and bumps in the black silicon layer; the LED chips are spaced by a certain space; a plurality of photoelectric chips disposed between the adjacent LED chips; the lowest positions of the photoelectric chips are higher than the light-emitting surfaces of the LED chips.

Description

Handicraft decorative lamp and manufacturing method thereof

Technical Field

The invention relates to the field of handicraft exhibition decoration design, in particular to a handicraft decoration lamp and a manufacturing method thereof.

Background

The handicraft article as one special commodity has the basic attributes of commodity, including use value and enjoying value. The handicraft as commodity is different from general commodity in that its use value is not represented as a certain material, but is reflected in spirit and culture, so as to meet certain aesthetic and mental requirements of people. Therefore, human subjective factors will play a decisive role in the development of the use value of the artware.

When the artware is displayed, exhibited or auctioned, the artware is often decorated and decorated, and most commonly, decorative lamps are used for lighting and decorating. The artistic decorative lamp is an organic component of the whole handicraft when being displayed, and the final purpose is to enable the lamp light to uniformly illuminate the handicraft and enable the visual function of people to play a good role. Because the sight of people is not fixed, the lighting lamp often brings brilliant brightness to people in a short time and causes visual fatigue for a long time if the brightness of the lighting lamp is too high; however, if the brightness of the decorative lighting fixture is too low, the aesthetic feeling of the handicraft article cannot be fully reflected or amplified.

Disclosure of Invention

Based on solving the problems, the invention provides a method for manufacturing a handicraft decorative lamp, which comprises the following steps:

(1) providing a GaN substrate, forming an LED epitaxial layer on the GaN substrate, and forming a plurality of grooves in the LED epitaxial layer so as to divide the LED epitaxial layer into a plurality of LED units;

(2) depositing a light reflecting layer on the side walls and the backlight surfaces of the LED units;

(3) forming a black silicon layer on the GaN substrate, wherein the black silicon layer fills the grooves and covers the backlight surface;

(4) forming a plurality of bumps in the black silicon layer to electrically connect the plurality of LED units

(5) The LED units are integrated along the grooves to form a plurality of LED chips, and the LED chips are flip chips and comprise light emitting surfaces opposite to the backlight surfaces;

(6) providing a substrate, wherein the substrate comprises an upper surface and a lower surface which are opposite, and the lower surface is provided with a first wiring layer;

(7) the LED chips and the photoelectric chips are sequentially arranged on the lower surface at intervals, wherein the lowest positions of the photoelectric chips are higher than the light-emitting surfaces of the LED chips;

(8) and sealing the plurality of LED chips and the plurality of photoelectric chips on the lower surface by using a sealing material.

According to the embodiment of the invention, between the step (4) and the step (5), the method further comprises the following steps: and removing the GaN substrate by grinding to expose the light emitting surfaces of the LED units.

According to an embodiment of the present invention, the upper surface has a second wiring layer thereon, and step (6) further includes forming a plurality of switching devices on the second wiring layer, the plurality of switching devices being formed in a multilayer dielectric layer.

According to the embodiment of the present invention, the substrate has a plurality of through holes therein, and the first wiring layer and the second wiring layer are in conduction up and down through the plurality of through holes.

According to an embodiment of the present invention, the plurality of switching devices are thin film transistors including an active layer.

According to an embodiment of the present invention, the active layer of each of the plurality of switching devices is disposed in up-and-down correspondence with each of the plurality of LED chips.

The invention also provides a handicraft decorative lamp which is formed by the manufacturing method and specifically comprises the following steps:

a substrate having opposing upper and lower surfaces, the lower surface having a first wiring layer thereon;

the LED chips comprise an LED epitaxial layer, a light reflecting layer and a black silicon layer which are sequentially arranged on the backlight surface and the side wall of the LED epitaxial layer, and bumps in the black silicon layer; the LED chips are electrically connected to the first wiring layer at intervals of certain space;

a plurality of photoelectric chips disposed between the adjacent plurality of LED chips and electrically connected to the first wiring layer; the lowest positions of the photoelectric chips are higher than the light-emitting surfaces of the LED chips;

and the sealing material at least seals the plurality of LED chips and the plurality of photoelectric chips.

According to the embodiment of the present invention, the upper surface has a second wiring layer on which a plurality of switching devices are formed, the plurality of switching devices are formed in a multilayer dielectric layer, and the plurality of switching devices are thin film transistors including an active layer.

According to the embodiment of the invention, the substrate is provided with a plurality of through holes, and the first wiring layer and the second wiring layer are conducted up and down through the through holes.

According to an embodiment of the present invention, the active layer of each of the plurality of switching devices is disposed up and down corresponding to each of the plurality of LED chips.

The invention has the advantages that:

(1) the light absorption material black silicon layer matched with the LED epitaxial layer and the light reflection layer is selected as a barrier, so that the influence of the emergent light of the LED chip on the photoelectric chip can be effectively avoided, the photoelectric chip can receive the light reflected by the artware as far as possible, and the detection of the brightness can be more accurate.

(2) The LED light source device comprises a plurality of LED chips and a plurality of photoelectric chips which are sequentially arranged at intervals, so that the photoelectric chips can be covered more comprehensively to obtain more accurate reflected light, and the detection accuracy of the light brightness is improved.

(3) Particularly, the lowest positions of the photoelectric chips are higher than the light emitting surfaces of the LED chips, so that the influence of light emitted by the LED chips on the photoelectric chips is further avoided, and the purpose can be achieved through the thickness of the black silicon layer on the backlight surfaces of the LED chips.

(4) In the invention, the switch device controls the light-emitting intensity of the LED chip through the feedback signals of the plurality of photoelectric chips, thereby achieving the excellent illumination effect of the handicraft.

(5) The active layers of the switching devices correspond to the LED chips one to one up, and therefore light can be prevented from irradiating the active layers and affecting the normal operation of the switching devices.

Drawings

FIG. 1 is a schematic view of artwork decorative lighting;

FIG. 2 is a cross-sectional view of the handicraft decorative lamp of the present invention;

fig. 3-10 are schematic flow charts of the manufacturing method of the handicraft decorative lamp of the invention.

Detailed Description

The technology will be described by referring to the attached drawings in the embodiment, and relates to a handicraft decorative lamp which is provided with a plurality of LED chips, wherein each LED chip comprises an LED epitaxial layer, a reflective layer and a black silicon layer which are sequentially arranged on the backlight surface and the side wall of the LED epitaxial layer, and a bump in the black silicon layer; the LED chips are electrically connected to the first wiring layer at intervals of certain space; and a plurality of photoelectric chips disposed between the adjacent LED chips and electrically connected to the first wiring layer; the lowest positions of the photoelectric chips are higher than the light-emitting surfaces of the LED chips.

The present techniques provide several advantages. The light absorption material black silicon layer matched with the LED epitaxial layer and the light reflection layer is selected as a barrier, so that the influence of the emergent light of the LED chip on the photoelectric chip can be effectively avoided, the photoelectric chip can receive the light reflected by the artware as far as possible, and the detection of the brightness can be more accurate.

The LED light source device comprises a plurality of LED chips and a plurality of photoelectric chips which are sequentially arranged at intervals, so that the photoelectric chips can be covered more comprehensively to obtain more accurate reflected light, and the detection accuracy of the light brightness is improved.

Particularly, the lowest positions of the photoelectric chips are higher than the light emitting surfaces of the LED chips, so that the influence of light emitted by the LED chips on the photoelectric chips is further avoided, and the purpose can be achieved through the thickness of the black silicon layer on the backlight surfaces of the LED chips.

In the invention, the switch device controls the light-emitting intensity of the LED chip through the feedback signals of the photoelectric chips, thereby achieving the excellent lighting effect of the handicraft.

The active layers of the switching devices correspond to the LED chips one to one up and down, and the light can be prevented from irradiating the active layers to influence the normal work of the switching devices.

It will be understood that the present technology may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the technology to those skilled in the art. Indeed, the technology is intended to cover alternatives, modifications and equivalents of these embodiments, which are included within the scope and spirit of the technology as defined by the appended claims. Furthermore, in the following detailed description of the present technology, numerous specific details are set forth in order to provide a thorough understanding of the present technology. It will be apparent, however, to one skilled in the art that the present technology may be practiced without these specific details.

The terms "top" and "bottom", "upper" and "lower" and "vertical" and "horizontal" and their various forms as used herein are for purposes of illustration and description only and are not intended to limit the description of the technology as the referenced items may be interchanged in position and orientation. Also, as used herein, the terms "substantially" and/or "about" mean that the specified dimensions or parameters may vary within acceptable manufacturing tolerances for a given application.

Referring first to fig. 1, in order to protect the handicraft, it is necessary to place the handicraft 52 in the closed visual space 50, and based on the fixing requirement, the handicraft 52 is fixed on the base 51, and the decorative lamp 100 is placed on the top of the visual space 50 to realize the illumination and decoration of the handicraft 52. The decorative lamp 100 is an LED lamp having variable color, brightness and color temperature to achieve the illumination decoration effect of different artworks in different environments.

Referring to fig. 2, there is shown a detailed illustration of the decorative lamp of the present invention. The decorative lamp includes a substrate 10, the substrate 10 includes a first wiring layer 12 and a second wiring layer 11 on the upper and lower surfaces thereof, the substrate 10 may be a glass substrate, a polyimide substrate, a resin substrate, etc., which may be a layered structure. The first and

second wiring layers

12 and 11 may be electroplated copper layers, aluminum layers or transparent conductive layers (e.g., ITO, etc.), which may be interconnected up and down through via structures (not shown) inside the substrate 10.

In the embodiment of the present invention, the lower surface of the substrate 10 has a plurality of LED chips and a plurality of optoelectronic chips 15. The LED chips comprise an LED epitaxial layer 2, and a reflective layer 6 and a black silicon layer 7 which are sequentially arranged on the backlight surface and the side wall of the LED epitaxial layer 2. The light reflecting layer 6 has a plurality of openings exposing the first electrodes 4 and the second electrodes 5 of the LED chip, and has bumps 8 and bumps 9 in the black silicon layer 7, wherein the bumps 8 are electrically connected to the first electrodes 4 through the openings, and the bumps 9 are electrically connected to the second electrodes 5 through the openings.

The reflecting layer 6 is a laminated structure of a silicon oxide layer and a silicon nitride layer. The black silicon layer 7 at least completely covers the backlight surface and the side wall of the LED chip, so that the light-emitting surface of the LED chip emits collimated emergent light, and the side light can be prevented from affecting the photoelectric chip 15. The black silicon layer 7 is formed by a deposition method, and as a special choice, the black silicon layer can be well lattice-matched with the silicon oxide and the silicon nitride layer of the light reflecting layer 6, and the light absorption capability of the black silicon layer 7 is strong.

The plurality of LED chips are electrically connected to the first wiring layer 12 with a space therebetween. The distance between every two LED chips is slightly larger than the width of the photoelectric chip 15, so that a narrow reflected light inlet is ensured, and reflected light is accurately received.

The plurality of photoelectric chips 15 are disposed between the adjacent plurality of LED chips and electrically connected to the first wiring layer 12; the lowest positions of the photoelectric chips 15 are higher than the light emitting surfaces of the LED chips. That is, the plurality of LED chips and the plurality of photo chips 15 are spaced apart from the first wiring layer 12 at the same distance, and the height of the plurality of photo chips 15 is lower than the height of the plurality of LED chips. In order to make the lowest positions of the plurality of optoelectronic chips 15 higher than the light emitting surfaces of the plurality of LED chips, the thickness of the black silicon layer 7 may be adjusted to realize specific height differences, for example, the height difference Δ h in fig. 2.

The lower surface of the substrate 10 is covered with a sealing material 19, and the sealing material 19 is made of a polymer material such as epoxy resin, polyimide, or polystyrene. The sealing material 19 completely seals the plurality of photo chips 15, and seals only the side surfaces and the backlight surfaces of the plurality of LED chips. The sealing material 19 exposes a light exit surface of the LED chip, which may be encapsulated by a filter layer or cover glass.

In the above structure, the plurality of photoelectric chips 15 receive the light reflected by the handicraft and convert the light into an electrical feedback signal to control the light emitting intensity of the LED chip, so as to achieve a better lighting effect of the handicraft.

With continued reference to fig. 2, in order to realize the control of the LED chip, a plurality of switching devices 14 are formed on the second wiring layer 11, the plurality of switching devices 14 are formed in the multi-layer dielectric layer 13, and the plurality of switching devices 14 are thin film transistors, which include an active layer.

In order to prevent the light from irradiating the active layer and affecting the normal operation of the switching device, the active layers of the switching device 14 correspond to the LED chips one by one up and down, and the vertical projection of the active layers on the substrate 10 completely falls into the vertical projection content of the LED chips on the substrate 10. In addition, each of the switching devices 14 controls the LED chips one by one.

According to the invention, the light absorption material black silicon layer 7 which is matched with the LED epitaxial layer 2 and the light reflection layer 6 is used as a barrier, so that the influence of the emergent light of the LED chip on the photoelectric chip 15 can be effectively avoided, and the photoelectric chip 15 can receive the light reflected by the artware as much as possible, thereby obtaining more accurate detection of the brightness.

Moreover, the plurality of LED chips and the plurality of photoelectric chips 15 are arranged at intervals in sequence, so that the photoelectric chips 15 can be covered more comprehensively to obtain more accurate reflected light, and the detection accuracy of the light brightness is improved.

In order to obtain the decorative lamp, the invention also provides a manufacturing method of the handicraft decorative lamp, which comprises the following steps:

The above-described method will be described in detail with reference to fig. 3 to 10.

Referring to fig. 3, a GaN substrate 1 is provided, an LED epitaxial layer 2 is formed on the GaN substrate 1, and a plurality of grooves 3 are formed in the LED epitaxial layer 2 to divide the LED epitaxial layer 2 into a plurality of LED units having a first electrode 4 and a second electrode 5, respectively. The LED epitaxial layer 2 is a group iii-v compound epitaxial layer, which may be a gallium nitride based material.

Referring next to fig. 4, a light reflecting layer 6 is deposited on the sidewalls and the backlight surfaces of the LED units. The reflecting layer 6 is a laminated structure of a silicon oxide layer and a silicon nitride layer.

Referring to fig. 5, a black silicon layer 7 is formed on the GaN substrate 1, and the black silicon layer 7 fills the plurality of grooves 3 and covers the backlight surface.

Referring to fig. 6, a plurality of bumps electrically connecting the plurality of LED units are formed in the black silicon layer 7, wherein the bump 8 is electrically connected to the first electrode 4, and the bump 9 is electrically connected to the second electrode 5.

Referring to fig. 7, the GaN substrate 1 is back ground to expose the light emitting surfaces of the LED units, and the method can make the outer wall of the LED chip completely surrounded by the black silicon layer 7.

The plurality of LED units are singulated along the plurality of grooves 3 to form a plurality of LED chips, which are flip chips and include a light emitting surface opposite to the backlight surface.

Referring to fig. 8, a substrate 10 is provided, the substrate 10 including opposing upper and lower surfaces, the lower surface having a first wiring layer 12 thereon, and the upper surface having a second wiring layer 11 thereon.

A plurality of switching devices 14 in a dielectric layer 13 are formed on the second wiring layer 11.

Referring to fig. 9, the LED chips and the photo chips 15 are sequentially disposed on the lower surface at intervals, wherein the lowest position of the photo chips 15 is higher than the light emitting surface of the LED chips. The plurality of photoelectric chips 15 are soldered by solder bumps 16, the first electrodes 4 of the plurality of LED chips are soldered by solder bumps 17, and the second electrodes 5 are soldered by solder bumps 18.

Referring to fig. 10, the plurality of LED chips and the plurality of optoelectronic chips 15 of the lower surface are sealed with a sealing material 19.

In the above method, the grooves 3 should extend into the GaN substrate 1, so that the sidewalls of the LED chip are completely covered by the black silicon layer 7.

The foregoing detailed description of the technology has been presented for purposes of illustration and description. It is not intended to be exhaustive or to limit the technology to the precise form disclosed. Many modifications and variations are possible in light of the above teaching. The described embodiments were chosen in order to best explain the principles of the technology and its practical application to thereby enable others skilled in the art to best utilize the technology in various embodiments and with various modifications as are suited to the particular use contemplated. The scope of the present technology is defined by the appended claims.

The expressions "exemplary embodiment," "example," and the like, as used herein, do not refer to the same embodiment, but are provided to emphasize different particular features. However, the above examples and exemplary embodiments do not preclude their implementation in combination with features of other examples. For example, even in a case where a description of a specific example is not provided in another example, unless otherwise stated or contrary to the description in the other example, the description may be understood as an explanation relating to the other example.

The terminology used in the present invention is for the purpose of illustrating examples only and is not intended to be limiting of the invention. Unless the context clearly dictates otherwise, singular expressions include plural expressions.

While example embodiments have been shown and described, it will be apparent to those skilled in the art that modifications and changes may be made without departing from the scope of the invention as defined by the claims.

Claims

1. A method for manufacturing a handicraft decorative lamp comprises the following steps:

(2) depositing a reflecting layer on the side walls and the backlight surfaces of the LED units;

(4) forming a plurality of bumps in the black silicon layer to electrically connect the plurality of LED units;

(7) welding the LED chips and the photoelectric chips on the lower surface at intervals in sequence, wherein the lowest positions of the photoelectric chips are higher than the light-emitting surfaces of the LED chips; the photoelectric chips receive light reflected by the artware and convert the light into electric feedback signals so as to control the light-emitting intensity of the LED chips;

2. The method for manufacturing an art ornament lamp of claim 1, wherein: between step (4) and step (5), further comprising: and removing the GaN substrate by grinding to expose the light emergent surfaces of the LED units.

3. The method for manufacturing a handicraft decorative lamp of claim 2, wherein: the upper surface has a second wiring layer thereon, and step (6) further includes forming a plurality of switching devices on the second wiring layer, the plurality of switching devices being formed in a multilayer dielectric layer.

4. The method for manufacturing an ornamental lamp for handicraft articles as claimed in claim 3, wherein: the substrate is provided with a plurality of through holes, and the first wiring layer and the second wiring layer are conducted up and down through the through holes.

5. The method for manufacturing a handicraft decorative lamp of claim 4, wherein: the plurality of switching devices are thin film transistors including an active layer.

6. The method for manufacturing a handicraft decorative lamp of claim 5, wherein: the active layer of each of the plurality of switching devices is disposed to correspond to each of the plurality of LED chips up and down.

7. The handicraft decorative lamp formed by the method for manufacturing the handicraft decorative lamp as claimed in claim 1, comprising:

the LED chips comprise an LED epitaxial layer, a light reflecting layer and a black silicon layer which are sequentially arranged on the backlight surface and the side wall of the LED epitaxial layer, and bumps in the black silicon layer; the LED chips are welded to the first wiring layer at intervals;

a plurality of photoelectric chips soldered between the adjacent LED chips and electrically connected to the first wiring layer; the lowest positions of the photoelectric chips are higher than the light-emitting surfaces of the LED chips;

a sealing material sealing at least the plurality of LED chips and the plurality of photoelectric chips;

the photoelectric chips receive the light reflected by the artware and convert the light into an electric feedback signal so as to control the light-emitting intensity of the LED chips.

8. The handicraft decorative lamp of claim 7, wherein: the upper surface is provided with a second wiring layer, a plurality of switching devices are formed on the second wiring layer and are formed in the multilayer dielectric layer, and the switching devices are thin film transistors and comprise an active layer.

9. The handicraft decorative lamp of claim 8, wherein: the substrate is provided with a plurality of through holes, and the first wiring layer and the second wiring layer are conducted up and down through the through holes.

10. The handicraft decorative lamp of claim 9, wherein: the active layer of each of the plurality of switching devices is disposed to correspond to each of the plurality of LED chips up and down.