CN111627826A - Method for welding metal structure on front surface of semiconductor chip - Google Patents

Method for welding metal structure on front surface of semiconductor chip Download PDF

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Publication number
CN111627826A
CN111627826A CN202010361867.5A CN202010361867A CN111627826A CN 111627826 A CN111627826 A CN 111627826A CN 202010361867 A CN202010361867 A CN 202010361867A CN 111627826 A CN111627826 A CN 111627826A
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planet carrier
wafer
metal
aluminum
evaporation
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王元之
张志向
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TIANSHUI TIANGUANG SEMICONDUCTOR CO Ltd
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TIANSHUI TIANGUANG SEMICONDUCTOR CO Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/034—Manufacturing methods by blanket deposition of the material of the bonding area
    • H01L2224/03444—Manufacturing methods by blanket deposition of the material of the bonding area in gaseous form
    • H01L2224/0345—Physical vapour deposition [PVD], e.g. evaporation, or sputtering

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Abstract

The invention discloses a method for welding a metal structure on the front surface of a semiconductor chip, which belongs to the technical field of processing of semiconductor integrated circuits and discrete devices, and comprises the following steps: a. cleaning a substrate silicon wafer; b. performing Ti-W metal sputtering treatment; c. evaporating metal Al, and treating the silicon wafer by adopting two cleaning liquids to clean the silicon wafer in sequence, so that the method is beneficial to the sputtering treatment of Ti-W metal and can improve the adhesion of a Ti-W metal layer; the Ti-W metal sputtering treatment before Al evaporation can avoid the damage of the evaporated Al to the device, prevent the early failure of the device caused by the electromigration of the metal Al to the device and improve the qualification rate of the wafer.

Description

Method for welding metal structure on front surface of semiconductor chip
Technical Field
The invention belongs to the technical field of processing of semiconductor integrated circuits and discrete devices, and particularly relates to a method for welding a Ti-W, Al metallization structure on the front surface of a silicon wafer
Background
The electrode system of the semiconductor device comprises a metallization layer, a wire bonding, and an ohmic contact between the chip and the base, which play a role in transferring power, and the device requires that the electrode system itself does not consume electric power, but only plays a role in transferring, and the electrode system is very important to the exposability of the device. Metallization systems are closely related to the yield and reliability of devices and their semiconductors.
In silicon devices, the most widely used metallization material is aluminum. Most silicon devices produced today are metallized with aluminum or aluminum metal. When the device works, certain current passes through the aluminum strips, and practice shows that aluminum ions in the electrified aluminum strips can be transmitted along the direction of electron current, and the transmission is more remarkable under the action of high temperature and large current density. After a long time, voids appear in the aluminum strips, and the voids gradually gather to cause open circuits, which is an electromigration phenomenon, also called electromigration or electrical jitter. The improvement of the metallization system is one of effective measures for improving the metallization system to prevent the device from electromigration failure, and the failure of the metallization system has a close relationship with factors such as a metallization material evaporation process, a passivation process, an alloy process and the like.
Disclosure of Invention
The invention aims to provide a method for welding a metal structure on the front surface of a semiconductor chip, which utilizes metal Ti-W as barrier layer metal to prevent early failure of a device caused by electromigration of metal Al to the device.
In order to achieve the purpose, the invention adopts the technical scheme that:
a method for welding a metal structure on the front side of a semiconductor chip comprises the following steps:
a. cleaning a substrate silicon wafer, namely cleaning the substrate silicon wafer by using a cleaning solution, then flushing for 9-11 minutes, and spin-drying for later use;
b. and (3) Ti-W metal sputtering treatment: b, placing the silicon wafer processed in the step a into a metal flower basket, then opening a baffle of a vacuum sputtering coating machine, placing the metal flower basket containing the silicon wafer into a sputtering track, covering the baffle, setting the baking temperature to be 147-153 ℃, and determining the sputtering vacuum degree to be 2x10-6Above Torr, opening argon to ensure that the argon is sputtered by 2-8 x10-3Torr, setting the thickness of the sputtered Ti-W metal layer
Figure RE-GDA0002581729160000021
Opening the baffle after sputtering is finished, taking out the metal basket with the silicon chip, and controlling the range of the test square resistance to be 2-18 omega/□;
c. evaporating metal Al: and (c) carrying out aluminum metal evaporation on the substrate silicon wafer with the Ti-W layer after the step b is finished.
Furthermore, the substrate silicon wafer adopts heavy siliconIn a quantity ratio of NH3H2O:H2O2:H2Cleaning solution a with O1: 1:5 and HCL H in weight ratio2O2:H2Cleaning treatment is carried out on a cleaning solution b with the ratio of O to 1:1:5, and the cleaning solution a and the cleaning solution b are respectively adopted for cleaning for 10 minutes at the temperature of 70-80 ℃;
further, the step of evaporating aluminum metal according to the present invention includes:
firstly, a silicon wafer with sputtered Ti-W is arranged on a planet carrier of an evaporation table
a) When wafers are mounted, firstly mounting an inner ring of a planet carrier, then mounting an outer ring of the planet carrier, when the front surface of each wafer is evaporated, the front surface of each pattern faces upwards, when the back surface of each wafer is evaporated, the front surface of each pattern faces downwards, hanging a clamp spring of a wafer mounting position of the planet carrier on the edge of the wafer mounting position by using tweezers, taking out a wafer in a batch to be evaporated, carefully mounting the silicon wafer into the wafer mounting position of the planet carrier, slightly pulling back the clamp spring, fixing the wafer on the wafer mounting position by the clamp spring, and after confirming that the wafer is mounted, clockwise rotating the planet carrier to the next wafer mounting position by a left hand;
b) repeating the step a) until the first planet carrier is filled with the wafers, taking a handle of the planet carrier after the first planet carrier is filled with the wafers, butting a central hook of the planet carrier, confirming that the handle is correctly butted with the hook of the planet carrier, aligning a hanging rod to a positioning hole of a support of the planet carrier, inserting the hanging rod in parallel, and clamping a clamping pin;
c) repeating the action of the step b) to mount the second planet carrier and the third planet carrier until all the wafers to be evaporated are completely mounted, and starting the equipment after the planet carriers are completely mounted in the vacuum chamber, so as to confirm that the planet carriers rotate, the bearings rotate freely and are positioned in the centers of the tracks;
preparation of evaporation source material
Adding a proper amount of metal source particles meeting the requirements into the crucible, wherein when the aluminum source is replaced, the metal particles are not needed to be added, and after the aluminum metal particles are added, the aluminum metal particles are visually inspected to be level with the upper edge of the red copper crucible and not lower than 2/3 of the crucible;
③ wafer evaporation
Closing the sealing door and fastening the lock catch, starting to vacuumize until the low vacuum reaches 40Pa, controlling the time of vacuuming for not more than 4 minutes and the high vacuum reachesTo 2x10-4Pa, controlling the vacuumizing time to be not more than 20 minutes, confirming that a baffle is normally opened when the aluminum metal melting source is finished, and recording the power value and the evaporation rate when the aluminum metal is evaporated to half of the target thickness, wherein the evaporation thickness is 1-5 um;
fourthly, taking off the wafer
After the metal aluminum is evaporated, waiting for 20-30 minutes, enabling the equipment to enter an automatic inflation state, straightening an upper handle of a vacuum chamber door after inflation is finished, opening a lock catch, pulling a vacuum chamber sealing door open, supporting the vacuum chamber door by using an upper right-corner bracket, detaching a planet carrier, placing the planet carrier on a loading platform planet carrier bracket, starting to take a wafer on the planet carrier, taking an outer ring and then taking an inner ring when taking the wafer, hooking a snap spring by using a forceps, hanging the snap spring on the edge of a wafer loading position of the planet carrier, taking the silicon wafer down, placing the silicon wafer into an original transmission position, rotating the planet carrier one position by the left hand anticlockwise, taking down one silicon wafer again until all the silicon wafers on the planet carrier are taken out, placing an empty planet carrier back into a cavity after the silicon wafers are taken out, and repeatedly finishing the taking of a second wafer;
square resistance test
And (4) carrying out square resistance test on the wafer processed in the step (IV) and screening qualified products.
Further, in the step ③, the evaporation power of the aluminum metal evaporation is 0.1-1 KW, and the evaporation rate is
Figure RE-GDA0002581729160000031
Further, in the square resistance test, the evaporation thickness of aluminum is
Figure RE-GDA0002581729160000032
The chip square resistance range is controlled to be R□40-50 m omega/□, and the aluminum evaporation thickness is
Figure RE-GDA0002581729160000033
The range of the chip square resistance is controlled to be R□25-40 m omega/□, and the aluminum evaporation thickness is
Figure RE-GDA0002581729160000034
The range of the square resistance of (A) is controlled to be R□5-15 m omega/□, and the evaporation thickness of the aluminum is
Figure RE-GDA0002581729160000035
The range of the square resistance of (A) is controlled to be R□＝2～8mΩ/□。
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that: the cleaning liquid a and the cleaning liquid b are sequentially adopted for processing to clean the silicon wafer, so that the sputtering treatment of Ti-W metal is facilitated, and the adhesion of the Ti-W metal layer is improved; the Ti-W metal sputtering treatment before Al evaporation can avoid the damage of the evaporated Al to the device, prevent the early failure of the device caused by the electromigration of the metal Al to the device and improve the qualification rate of the wafer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Examples
The invention provides a method for welding a metal structure on the front surface of a semiconductor chip, which comprises the following steps:
a. cleaning a substrate silicon wafer, wherein the substrate silicon wafer adopts NH in weight ratio3H2O:H2O2:H2Cleaning solution a with O1: 1:5 and HCL H in weight ratio2O2:H2Cleaning treatment is carried out on a cleaning solution b with the ratio of O to 1:1:5, the cleaning solution a and the cleaning solution b are respectively used for cleaning for 10 minutes at 70 ℃, water is flushed for 11 minutes after cleaning, and the cleaning solution b is dried for standby application;
b. and (3) Ti-W metal sputtering treatment: b, placing the silicon wafer processed in the step a into a metal flower basket, then opening a baffle of a vacuum sputtering coating machine, placing the metal flower basket containing the silicon wafer into a sputtering track, covering the baffle, setting the baking temperature to 147 ℃, and determining the sputtering vacuum degree of 2x10-6Torr above, turn on argon to determine sputtering argon 8x10-3Torr, setting the thickness of the sputtered Ti-W metal layer
Figure RE-GDA0002581729160000041
Opening the baffle after sputtering is finished, taking out the metal flower basket containing the silicon chip, and controlling the range of the test square resistance to be 2-18 omega/□;
c. evaporating metal Al: carrying out aluminum metal evaporation on the substrate silicon wafer with the Ti-W layer after the step b is finished;
the step of evaporating the aluminum metal comprises:
firstly, a silicon wafer with sputtered Ti-W is arranged on a planet carrier of an evaporation table
a) When wafers are mounted, firstly mounting an inner ring of a planet carrier, then mounting an outer ring of the planet carrier, when the front surface of each wafer is evaporated, the front surface of each pattern faces upwards, when the back surface of each wafer is evaporated, the front surface of each pattern faces downwards, hanging a clamp spring of a wafer mounting position of the planet carrier on the edge of the wafer mounting position by using tweezers, taking out a wafer in a batch to be evaporated, carefully mounting the silicon wafer into the wafer mounting position of the planet carrier, slightly pulling back the clamp spring, fixing the wafer on the wafer mounting position by the clamp spring, and after confirming that the wafer is mounted, clockwise rotating the planet carrier to the next wafer mounting position by a left hand;
b) repeating the step a) until the first planet carrier is filled with the wafers, taking a handle of the planet carrier after the first planet carrier is filled with the wafers, butting a central hook of the planet carrier, confirming that the handle is correctly butted with the hook of the planet carrier, aligning a hanging rod to a positioning hole of a support of the planet carrier, inserting the hanging rod in parallel, and clamping a clamping pin;
c) repeating the action of the step b) to mount the second planet carrier and the third planet carrier until all the wafers to be evaporated are completely mounted, and starting the equipment after the planet carriers are completely mounted in the vacuum chamber, so as to confirm that the planet carriers rotate, the bearings rotate freely and are positioned in the centers of the tracks;
preparation of evaporation source material
Adding a proper amount of metal source particles meeting the requirements into the crucible, wherein when the aluminum source is replaced, the metal particles are not needed to be added, and after the aluminum metal particles are added, the aluminum metal particles are visually inspected to be level with the upper edge of the red copper crucible and not lower than 2/3 of the crucible;
③ wafer evaporation
Closing the sealing door and fastening the lock catch to start to extract the true stateThe vacuum degree reaches 40Pa, the low vacuum degree is controlled to be 2 minutes, and the high vacuum degree reaches 2x10-4Pa, controlling the vacuumizing time for 10 minutes, confirming that a baffle is normally opened when the aluminum metal melting source is finished, and recording the power value and the evaporation rate when the aluminum metal is evaporated to half of the target thickness, wherein the evaporation thickness is 1 um; the evaporation power is 0.1KW and the evaporation rate is
Figure RE-GDA0002581729160000051
Fourthly, taking off the wafer
After the metal aluminum is evaporated, waiting for 20 minutes, enabling the equipment to enter an automatic inflation state, straightening a handle on a vacuum chamber door after inflation is finished, opening a lock catch, pulling a vacuum chamber sealing door open, supporting the vacuum chamber door by using an upper right-corner bracket, detaching a planet carrier, placing the planet carrier on a loading platform planet carrier bracket, starting to take a wafer on a planet carrier, taking an outer ring and then taking an inner ring when taking the wafer, hooking a snap spring by using a forceps, hanging the snap spring on the edge of a wafer loading position of the planet carrier, taking the silicon wafer down and placing the silicon wafer into an original transfer wafer box, rotating the planet carrier one position by using the left hand anticlockwise every time, taking down one silicon wafer again until all the silicon wafers on the planet carrier are taken out, and after the silicon wafers are taken out, putting an empty planet carrier back into a cavity, and repeatedly finishing the;
square resistance test
Testing square resistance of the wafer processed in the step ④ to screen qualified products, wherein the evaporation thickness of aluminum is
Figure RE-GDA0002581729160000052
The chip square resistance range is controlled to be R□40-50 m omega/□, and the aluminum evaporation thickness is
Figure RE-GDA0002581729160000053
The range of the chip square resistance is controlled to be R□25-40 m omega/□, and the aluminum evaporation thickness is
Figure RE-GDA0002581729160000055
Figure RE-GDA0002581729160000054
The range of the square resistance of (A) is controlled to be R□5-15 m omega/□, and the evaporation thickness of the aluminum is
Figure RE-GDA0002581729160000056
The range of the square resistance of (A) is controlled to be R□＝2～8mΩ/□。
Example 2
The invention provides a method for welding a metal structure on the front surface of a semiconductor chip, which comprises the following steps:
a. cleaning a substrate silicon wafer, wherein the substrate silicon wafer adopts NH in weight ratio3H2O:H2O2:H2Cleaning solution a with O1: 1:5 and HCL H in weight ratio2O2:H2Cleaning treatment is carried out on a cleaning solution b with the ratio of O to 1:1:5, the cleaning solution a and the cleaning solution b are respectively used for cleaning for 10 minutes at the temperature of 80 ℃, water is flushed for 9 minutes after cleaning, and spin-drying is carried out for standby application;
b. and (3) Ti-W metal sputtering treatment: b, placing the silicon wafer processed in the step a into a metal basket, then opening a baffle of a vacuum sputtering coating machine, placing the metal basket containing the silicon wafer into a sputtering track, covering the baffle, setting the baking temperature to 153 ℃, and determining the sputtering vacuum degree of 2x10-6Torr above, turn on argon to determine sputtering argon 2x10-3Torr, setting the thickness of the sputtered Ti-W metal layer
Figure RE-GDA0002581729160000061
Opening the baffle after sputtering is finished, taking out the metal flower basket containing the silicon chip, and controlling the range of the test square resistance to be 2-18 omega/□;
c. evaporating metal Al: carrying out aluminum metal evaporation on the substrate silicon wafer with the Ti-W layer after the step b is finished;
the step of evaporating the aluminum metal comprises:
firstly, a silicon wafer with sputtered Ti-W is arranged on a planet carrier of an evaporation table
a) When wafers are mounted, firstly mounting an inner ring of a planet carrier, then mounting an outer ring of the planet carrier, when the front surface of each wafer is evaporated, the front surface of each pattern faces upwards, when the back surface of each wafer is evaporated, the front surface of each pattern faces downwards, hanging a clamp spring of a wafer mounting position of the planet carrier on the edge of the wafer mounting position by using tweezers, taking out a wafer in a batch to be evaporated, carefully mounting the silicon wafer into the wafer mounting position of the planet carrier, slightly pulling back the clamp spring, fixing the wafer on the wafer mounting position by the clamp spring, and after confirming that the wafer is mounted, clockwise rotating the planet carrier to the next wafer mounting position by a left hand;
b) repeating the step a) until the first planet carrier is filled with the wafers, taking a handle of the planet carrier after the first planet carrier is filled with the wafers, butting a central hook of the planet carrier, confirming that the handle is correctly butted with the hook of the planet carrier, aligning a hanging rod to a positioning hole of a support of the planet carrier, inserting the hanging rod in parallel, and clamping a clamping pin;
c) repeating the action of the step b) to mount the second planet carrier and the third planet carrier until all the wafers to be evaporated are completely mounted, and starting the equipment after the planet carriers are completely mounted in the vacuum chamber, so as to confirm that the planet carriers rotate, the bearings rotate freely and are positioned in the centers of the tracks;
preparation of evaporation source material
Adding a proper amount of metal source particles meeting the requirements into the crucible, wherein when the aluminum source is replaced, the metal particles are not needed to be added, and after the aluminum metal particles are added, the aluminum metal particles are visually inspected to be level with the upper edge of the red copper crucible and not lower than 2/3 of the crucible;
③ wafer evaporation
Closing the sealing door and fastening the lock catch, starting to vacuumize until the low vacuum reaches 40Pa, controlling the low vacuum time not to be more than 4 minutes and the high vacuum reaches 2x10-4Pa, controlling the vacuumizing time to be not more than 20 minutes, confirming that a baffle is normally opened when the aluminum metal melting source is finished, and recording the power value and the evaporation rate when the aluminum metal is evaporated to half of the target thickness, wherein the evaporation thickness is 5 um; the evaporation power is 1KW and the evaporation rate is
Figure RE-GDA0002581729160000071
Fourthly, taking off the wafer
After the metal aluminum is evaporated, waiting for 30 minutes, enabling the equipment to enter an automatic inflation state, straightening a handle on a vacuum chamber door after inflation is finished, opening a lock catch, pulling a vacuum chamber sealing door open, supporting the vacuum chamber door by using an upper right-corner bracket, detaching a planet carrier, placing the planet carrier on a loading platform planet carrier bracket, starting to take a wafer on a planet carrier, taking an outer ring and then taking an inner ring when taking the wafer, hooking a snap spring by using a forceps, hanging the snap spring on the edge of a wafer loading position of the planet carrier, taking the silicon wafer down and placing the silicon wafer into an original transfer wafer box, rotating the planet carrier one position by using the left hand anticlockwise every time, taking down one silicon wafer again until all the silicon wafers on the planet carrier are taken out, and after the silicon wafers are taken out, putting an empty planet carrier back into a cavity, and repeatedly finishing the;
square resistance test
And (4) performing square resistance test on the wafer processed in the step ④, wherein in the square resistance test, the evaporation thickness of aluminum is
Figure RE-GDA0002581729160000072
The chip square resistance range is controlled to be R□40-50 m omega/□, and the aluminum evaporation thickness is
Figure RE-GDA0002581729160000073
The range of the chip square resistance is controlled to be R□25-40 m omega/□, and the aluminum evaporation thickness is
Figure RE-GDA0002581729160000076
Figure RE-GDA0002581729160000074
The range of the square resistance of (A) is controlled to be R□5-15 m omega/□, and the evaporation thickness of the aluminum is
Figure RE-GDA0002581729160000075
The range of the square resistance of (A) is controlled to be R□＝2～8mΩ/□。
Example 3
The invention provides a method for welding a metal structure on the front surface of a semiconductor chip, which comprises the following steps:
a. cleaning a substrate silicon wafer, wherein the substrate silicon wafer adopts NH in weight ratio3H2O:H2O2:H2Cleaning solution a with O1: 1:5 and HCL H in weight ratio2O2:H2Cleaning treatment is carried out on a cleaning solution b with the ratio of O to 1:1:5, the cleaning solution a and the cleaning solution b are respectively used for cleaning for 10 minutes at 75 ℃, flushing treatment is carried out for 10 minutes after cleaning, and spin-drying is carried out for standby application;
b. and (3) Ti-W metal sputtering treatment: b, placing the silicon wafer processed in the step a into a metal flower basket, then opening a baffle of a vacuum sputtering coating machine, placing the metal flower basket containing the silicon wafer into a sputtering track, covering the baffle, setting the baking temperature to be 150 ℃, and determining the sputtering vacuum degree to be 2x10-6Torr above, turn on argon to determine sputtering argon 5x10-3Torr, setting the thickness of the sputtered Ti-W metal layer
Figure RE-GDA0002581729160000081
Opening the baffle after sputtering is finished, taking out the metal flower basket containing the silicon chip, and controlling the range of the test square resistance to be 2-18 omega/□;
c. evaporating metal Al: carrying out aluminum metal evaporation on the substrate silicon wafer with the Ti-W layer after the step b is finished;
the step of evaporating the aluminum metal comprises:
firstly, a silicon wafer with sputtered Ti-W is arranged on a planet carrier of an evaporation table
a) When wafers are mounted, firstly mounting an inner ring of a planet carrier, then mounting an outer ring of the planet carrier, when the front surface of each wafer is evaporated, the front surface of each pattern faces upwards, when the back surface of each wafer is evaporated, the front surface of each pattern faces downwards, hanging a clamp spring of a wafer mounting position of the planet carrier on the edge of the wafer mounting position by using tweezers, taking out a wafer in a batch to be evaporated, carefully mounting the silicon wafer into the wafer mounting position of the planet carrier, slightly pulling back the clamp spring, fixing the wafer on the wafer mounting position by the clamp spring, and after confirming that the wafer is mounted, clockwise rotating the planet carrier to the next wafer mounting position by a left hand;
b) repeating the step a) until the first planet carrier is filled with the wafers, taking a handle of the planet carrier after the first planet carrier is filled with the wafers, butting a central hook of the planet carrier, confirming that the handle is correctly butted with the hook of the planet carrier, aligning a hanging rod to a positioning hole of a support of the planet carrier, inserting the hanging rod in parallel, and clamping a clamping pin;
c) repeating the action of the step b) to mount the second planet carrier and the third planet carrier until all the wafers to be evaporated are completely mounted, and starting the equipment after the planet carriers are completely mounted in the vacuum chamber, so as to confirm that the planet carriers rotate, the bearings rotate freely and are positioned in the centers of the tracks;
preparation of evaporation source material
Adding a proper amount of metal source particles meeting the requirements into the crucible, wherein when the aluminum source is replaced, the metal particles are not needed to be added, and after the aluminum metal particles are added, the aluminum metal particles are visually inspected to be level with the upper edge of the red copper crucible and not lower than 2/3 of the crucible;
③ wafer evaporation
Closing the sealing door and fastening the lock catch, starting to vacuumize until the low vacuum reaches 40Pa, controlling the low vacuum time to vacuumize for 4 minutes until the high vacuum reaches 2x10-4Pa, controlling the vacuumizing time for 20 minutes, confirming that a baffle is normally opened when the aluminum metal melting source is finished, and recording the power value and the evaporation rate when the aluminum metal is evaporated to half of the target thickness, wherein the evaporation thickness is 3 um; the evaporation power is 0.5KW and the evaporation rate is
Figure RE-GDA0002581729160000082
Fourthly, taking off the wafer
After the metal aluminum is evaporated, waiting for 25 minutes, enabling the equipment to enter an automatic inflation state, straightening a handle on a vacuum chamber door after inflation, opening a lock catch, pulling a vacuum chamber sealing door open, supporting the vacuum chamber door by using an upper right-corner bracket, detaching a planet carrier, placing the planet carrier on a loading platform planet carrier bracket, starting to take a wafer on a planet carrier, taking an outer ring and then taking an inner ring when taking the wafer, hooking a snap spring by using a tweezers, hanging the snap spring on the edge of a wafer loading position of the planet carrier, taking the silicon wafer down and placing the silicon wafer into an original transfer wafer box, rotating the planet carrier one position by using the left hand anticlockwise when each wafer is taken, taking down one silicon wafer again until all the silicon wafers on the planet carrier are taken out, and after the silicon wafers are taken out, putting an empty planet carrier back into a cavity, and repeatedly finishing;
square resistance test
And (4) carrying out square resistance test on the wafer processed in the step (IV) and screening qualified products.
And thirdly, evaporating the aluminum metal.
Further, in the square resistance test, the evaporation thickness of aluminum is
Figure RE-GDA0002581729160000091
The chip square resistance range is controlled to be R□40-50 m omega/□, and the aluminum evaporation thickness is
Figure RE-GDA0002581729160000092
The range of the chip square resistance is controlled to be R□25-40 m omega/□, and the aluminum evaporation thickness is
Figure RE-GDA0002581729160000093
The range of the square resistance of (A) is controlled to be R□5-15 m omega/□, and the evaporation thickness of the aluminum is
Figure RE-GDA0002581729160000094
The range of the square resistance of (A) is controlled to be R□＝2～8mΩ/□。
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.

Claims (5)

1. A method for welding a metal structure on the front surface of a semiconductor chip is characterized by comprising the following steps:
a. cleaning a substrate silicon wafer, namely cleaning the substrate silicon wafer by using a cleaning solution, then flushing for 9-11 minutes, and spin-drying for later use;
b. and (3) Ti-W metal sputtering treatment: b, placing the silicon wafer processed in the step a into a metal flower basket, then opening a baffle of a vacuum sputtering coating machine, placing the metal flower basket containing the silicon wafer into a sputtering track, covering the baffle, setting the baking temperature to be 147-153 ℃, and determining the sputtering vacuum degree to be 2x10-6Above Torr, opening argon to ensure that the argon is sputtered by 2-8 x10-3Torr, setting the thickness of the sputtered Ti-W metal layer
Figure FDA0002475362520000011
Opening the baffle after sputtering is finished, taking out the metal basket with the silicon chip, and controlling the range of the test square resistance to be 2-18 omega/□;
c. evaporating metal Al: and (c) carrying out aluminum metal evaporation on the substrate silicon wafer with the Ti-W layer after the step b is finished.
2. The method of claim 1, wherein: the substrate silicon wafer adopts the weight ratio of NH3H2O:H2O2:H2Cleaning solution a with O1: 1:5 and HCL H in weight ratio2O2:H2And (3) cleaning the cleaning solution b with O being 1:1:5, and cleaning the cleaning solution b with the cleaning solution a at 70-80 ℃ for 10 minutes respectively.
3. The method of claim 1, wherein the step of evaporating aluminum metal comprises:
firstly, a silicon wafer with sputtered Ti-W is arranged on a planet carrier of an evaporation table
a) When wafers are mounted, firstly mounting an inner ring of a planet carrier, then mounting an outer ring of the planet carrier, when the front surface of each wafer is evaporated, the front surface of each pattern faces upwards, when the back surface of each wafer is evaporated, the front surface of each pattern faces downwards, hanging a clamp spring of a wafer mounting position of the planet carrier on the edge of the wafer mounting position by using tweezers, taking out a wafer in a batch to be evaporated, carefully mounting the silicon wafer into the wafer mounting position of the planet carrier, slightly pulling back the clamp spring, fixing the wafer on the wafer mounting position by the clamp spring, and after confirming that the wafer is mounted, clockwise rotating the planet carrier to the next wafer mounting position by a left hand;
b) repeating the step a) until the first planet carrier is filled with the wafers, taking a handle of the planet carrier after the first planet carrier is filled with the wafers, butting a central hook of the planet carrier, confirming that the handle is correctly butted with the hook of the planet carrier, aligning a hanging rod to a positioning hole of a support of the planet carrier, inserting the hanging rod in parallel, and clamping a clamping pin;
c) repeating the action of the step b) to mount the second planet carrier and the third planet carrier until all the wafers to be evaporated are completely mounted, and starting the equipment after the planet carriers are completely mounted in the vacuum chamber, so as to confirm that the planet carriers rotate, the bearings rotate freely and are positioned in the centers of the tracks;
preparation of evaporation source material
Adding a proper amount of metal source particles meeting the requirements into the crucible, wherein when the aluminum source is replaced, the metal particles are not needed to be added, and after the aluminum metal particles are added, the aluminum metal particles are visually inspected to be level with the upper edge of the red copper crucible and not lower than 2/3 of the crucible;
③ wafer evaporation
Closing the sealing door and fastening the lock catch, starting to vacuumize until the low vacuum reaches 40Pa, controlling the low vacuum time not to be more than 4 minutes and the high vacuum reaches 2x10-4Pa, controlling the vacuumizing time to be not more than 20 minutes, confirming that a baffle is normally opened when the aluminum metal melting source is finished, and recording the power value and the evaporation rate when the aluminum metal is evaporated to half of the target thickness, wherein the evaporation thickness is 1-5 um;
fourthly, taking off the wafer
After the metal aluminum is evaporated, waiting for 20-30 minutes, enabling the equipment to enter an automatic inflation state, straightening an upper handle of a vacuum chamber door after inflation is finished, opening a lock catch, pulling a vacuum chamber sealing door open, supporting the vacuum chamber door by using an upper right-corner bracket, detaching a planet carrier, placing the planet carrier on a loading platform planet carrier bracket, starting to take a wafer on the planet carrier, taking an outer ring and then taking an inner ring when taking the wafer, hooking a snap spring by using a forceps, hanging the snap spring on the edge of a wafer loading position of the planet carrier, taking the silicon wafer down, placing the silicon wafer into an original transmission position, rotating the planet carrier one position by the left hand anticlockwise, taking down one silicon wafer again until all the silicon wafers on the planet carrier are taken out, placing an empty planet carrier back into a cavity after the silicon wafers are taken out, and repeatedly finishing the taking of a second wafer;
square resistance test
And (4) carrying out square resistance test on the wafer processed in the step (IV) and screening qualified products.
4. The method of claim 3, wherein the evaporation power of aluminum metal in step ③ is 0.1-1 KW, and the evaporation rate is
Figure FDA0002475362520000021
5. The method of claim 3, wherein: in the square resistance test, the evaporation thickness of aluminum is
Figure FDA0002475362520000022
The chip square resistance range is controlled to be R□40-50 m omega/□, and the aluminum evaporation thickness is
Figure FDA0002475362520000023
Figure FDA0002475362520000024
The range of the chip square resistance is controlled to be R□25-40 m omega/□, and the aluminum evaporation thickness is
Figure FDA0002475362520000025
The range of the square resistance of (A) is controlled to be R□5-15 m omega/□, and the evaporation thickness of the aluminum is
Figure FDA0002475362520000026
The range of the square resistance of (A) is controlled to be R□＝2～8mΩ/□。
CN202010361867.5A 2020-04-30 2020-04-30 Method for welding metal structure on front surface of semiconductor chip Pending CN111627826A (en)

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