CN111627697A - Structure of gapless stacked film capacitor - Google Patents
Structure of gapless stacked film capacitor Download PDFInfo
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- CN111627697A CN111627697A CN202010554435.6A CN202010554435A CN111627697A CN 111627697 A CN111627697 A CN 111627697A CN 202010554435 A CN202010554435 A CN 202010554435A CN 111627697 A CN111627697 A CN 111627697A
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- Prior art keywords
- film
- gapless
- film capacitor
- layers
- capacitor
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- 239000003990 capacitor Substances 0.000 title claims abstract description 44
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 3
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 3
- 150000004767 nitrides Chemical class 0.000 claims abstract description 3
- 238000005507 spraying Methods 0.000 claims description 8
- 238000004880 explosion Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 claims 1
- 230000003071 parasitic effect Effects 0.000 abstract description 5
- 238000010030 laminating Methods 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 abstract 9
- 239000011229 interlayer Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 33
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000002500 effect on skin Effects 0.000 description 2
- 238000004146 energy storage Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OLBVUFHMDRJKTK-UHFFFAOYSA-N [N].[O] Chemical compound [N].[O] OLBVUFHMDRJKTK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/10—Metal-oxide dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
Abstract
The invention discloses a structure of a gapless stacked film capacitor, and belongs to the field of novel electronic component principle and preparation. The structure of the film capacitor is formed by laminating a metal conducting layer film and a metal oxide or nitride dielectric layer film layer by layer, no gap is formed between the layers, the layers are tightly combined, and a capacitor anode and a capacitor cathode are respectively led out from adjacent conducting layers. The film capacitor adopting the structure has the characteristics of more layers, no gap between layers, small interlayer spacing and the like, thereby having the advantages of large capacity, wide working temperature range, low parasitic inductance, low equivalent series impedance (ESR) and the like and being suitable for being applied to high-frequency circuits.
Description
Technical Field
The invention belongs to the field of electronic component preparation, and particularly relates to a structure of a gapless laminated film capacitor.
Background
Capacitors in rf circuits need to have good high-frequency characteristics and low loss, and particularly, with the development of mobile communication devices, rf circuits are required to ensure output power while achieving low power consumption, wide operating temperature range, and small size. Therefore, the capacitor in the rf circuit needs to have not only higher energy storage density but also better temperature stability.
The thin film capacitor is made of a conductive layer and a dielectric layer in a winding and laminating manner, has the characteristics of high insulation resistance, excellent frequency characteristics, small dielectric loss, high charging and discharging speed, long service life, no polarity and the like, and is widely applied to radio frequency circuits.
Most of the current film capacitors are wound structures, and have a series of advantages, but the high-frequency characteristics of the capacitor (relatively large parasitic inductance generated by the wound structures) are affected, and gaps exist among the wound structures, so that the energy storage density is affected. The film capacitor with the laminated structure has advantages in high-frequency characteristics, and if the film capacitor without gaps between layers is prepared, the film capacitor with the laminated structure can have good high-frequency characteristics and high storage density.
Disclosure of Invention
The invention aims to design a gapless laminated film capacitor structure, which is formed by tightly and gaplessly combining a plurality of dielectric layers and conductive layer films, has the advantages of large capacity, wide working temperature range, low parasitic inductance, low equivalent series impedance (ESR) and the like, and is suitable for being applied to high-frequency circuits.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows: a gapless laminated film capacitor structure is composed of a conducting layer and a dielectric layer film tightly combined together without air gap in between,
the conductive layer film is obtained by spraying the conductive layer film on the surface of the dielectric layer for multiple times by an electric explosion metal wire method, the conductive layer material can be selected from copper or aluminum with good conductive performance, and the thickness of the conductive layer can be controlled by the process parameters and the spraying times when the electric explosion metal wire is sprayed.
The dielectric layer film is prepared by placing the prepared conducting layer in an oxygen or nitrogen atmosphere, and forming a compact metal oxide or metal nitride film with a certain thickness on the surface of the conducting layer through high-temperature heating oxidation or nitridation, wherein the thickness of the dielectric layer film can be controlled by the time and temperature of thermal oxidation.
The conducting layer and the dielectric layer film are tightly combined together without air gaps. The multiple layers of conducting layers and dielectric layer films are superposed to form the gapless laminated film capacitor.
The technical scheme adopted by the invention can achieve the following beneficial effects:
the gapless laminated film capacitor structure prepared by the technical scheme can enable the prepared film capacitor to obtain extremely small electrode distance and extremely large equivalent electrode surface area through a multilayer laminated structure, so that the gapless laminated film capacitor structure has a high-capacity characteristic;
the gapless laminated film capacitor structure prepared by the technical scheme can be used for preparing an interlaminar gapless film capacitor, can improve the dielectric constant of a dielectric layer and reduce the dielectric loss;
the gapless laminated film capacitor structure prepared by the technical scheme can be used for preparing a film capacitor with a laminated structure, reduces equivalent inductance and is suitable for working at high frequency;
the gapless laminated film capacitor structure prepared by the technical scheme can flexibly control the thicknesses of the conducting layer and the dielectric layer, and can flexibly prepare film capacitors with different withstand voltage or different equivalent series resistance requirements according to actual requirements.
Drawings
FIG. 1 is a schematic view of a gapless stacked film capacitor configuration;
FIG. 2 is a schematic of two different gapless stacked configurations, (a) positive and negative electrodes stacked in sequence and (b)2 layers of positive and 2 layers of negative electrodes stacked in sequence;
fig. 3 is an equivalent circuit diagram of a gapless stacked-structure film capacitor.
Detailed Description
The operation principle and the implementation method of the present invention will be further described in detail with reference to the accompanying drawings.
Spraying a layer of metal aluminum on the surface of an aluminum matrix material by an electric explosion wire spraying method in an argon protection environment; then the sample is put in an oxygen (nitrogen) environment and oxidized (nitrided) at high temperature to form an aluminum oxide (aluminum nitride) dielectric layer; and repeating the steps to finally obtain the gapless laminated structure film structure shown in figure 1, and respectively leading out positive and negative electrodes to prepare the film capacitor.
When the thin film capacitor shown in fig. 1 is charged, positive and negative charges are applied to the positive and negative electrodes of the capacitor, respectively, with a dielectric layer between the electrodes. The film capacitor has the characteristics of large capacity, low ESR and the like due to the characteristics of more layers, large surface area, small electrode distance, large dielectric constant and the like of the structure.
Instead of stacking the positive electrode and the negative electrode in sequence without gaps, it is also possible to prepare 2 layers of positive electrode and 2 layers of negative electrode in sequence according to actual requirements, as shown in fig. 2. Therefore, different electromagnetic field distributions and different equivalent circuit parameters are realized in the capacitor, and the capacitor is suitable for application occasions with different requirements.
An equivalent circuit of a film capacitor of a laminated structure is shown in FIG. 3, the capacitor has positive and negative electrodes, which are respectively represented by "+" and "-", and R isS+Indicating the contact resistance of the positive terminal and the lead-out electrode resistance, RS-Denotes the contact resistance of the negative electrode terminal and the resistance of the extraction electrode, RE+1……RE+nRespectively representing the resistance generated by the skin effect of the 1 st to the n-th positive electrode layers, RE-1……RE-nRespectively representing the resistance generated by the skin effect of the 1 st to the n-th negative electrode layers, LE+1……LE+nRespectively represent equivalent inductances (parasitic inductances) at high frequencies of the positive electrode layers of the 1 st to n-th layers, LE-1……LE-nRespectively represent equivalent inductance (parasitic inductance) at high frequencies of the 1 st to the n-th cathode layers, RP1……RPnRespectively representing the parallel resistance, C, of the 1 st to nth capacitive storage units in consideration of dielectric loss1……CnRespectively representing the capacitance values of the 1 st to nth capacitive storage units.
Claims (4)
1. A gapless laminated film capacitor structure features that there is no gap between conducting layer and dielectric film of film capacitor, and the conducting layer and dielectric film are closely combined together by spraying technology.
2. The structure of a gapless stacked film capacitor as claimed in claim 1, wherein the conductive layer film is formed by spraying multiple times on the surface of the dielectric layer by using an electric explosion wire method, the conductive layer material is selected from copper or aluminum with good conductivity, and the thickness of the conductive layer is controlled by the process parameters and spraying times of the electric explosion wire spraying.
3. The structure of a gapless stacked film capacitor as claimed in claim 1, wherein the dielectric layer film is formed by placing the prepared conductive layer in an oxygen or nitrogen atmosphere, and performing high temperature thermal oxidation or nitridation to form a dense metal oxide or metal nitride film with a certain thickness on the surface of the conductive layer, and the thickness of the dielectric layer film can be controlled by the time and temperature of the thermal oxidation.
4. The structure of a gapless stacked film capacitor of claim 1 wherein the conductive layer and the dielectric film are tightly bonded together without an air gap. The multiple layers of conducting layers and dielectric layer films are superposed to form the gapless laminated film capacitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010554435.6A CN111627697A (en) | 2020-06-17 | 2020-06-17 | Structure of gapless stacked film capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010554435.6A CN111627697A (en) | 2020-06-17 | 2020-06-17 | Structure of gapless stacked film capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111627697A true CN111627697A (en) | 2020-09-04 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010554435.6A Withdrawn CN111627697A (en) | 2020-06-17 | 2020-06-17 | Structure of gapless stacked film capacitor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111627697A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009117601A (en) * | 2007-11-06 | 2009-05-28 | Panasonic Corp | Method of manufacturing capacitor, capacitor, and circuit substrate |
| CN106124971A (en) * | 2016-04-20 | 2016-11-16 | 桂林理工大学 | Electro-explosive opening switch experimental provision in inductive energy storage type pulse power system |
| CN209216798U (en) * | 2018-12-28 | 2019-08-06 | 西安西电电力电容器有限责任公司 | A kind of self-healing capacitor component and a kind of capacitor |
-
2020
- 2020-06-17 CN CN202010554435.6A patent/CN111627697A/en not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009117601A (en) * | 2007-11-06 | 2009-05-28 | Panasonic Corp | Method of manufacturing capacitor, capacitor, and circuit substrate |
| CN106124971A (en) * | 2016-04-20 | 2016-11-16 | 桂林理工大学 | Electro-explosive opening switch experimental provision in inductive energy storage type pulse power system |
| CN209216798U (en) * | 2018-12-28 | 2019-08-06 | 西安西电电力电容器有限责任公司 | A kind of self-healing capacitor component and a kind of capacitor |
Non-Patent Citations (1)
| Title |
|---|
| 应安文: "基于电爆炸丝喷涂的层叠式薄膜电容器制备设备参数优化研究", 《万方数据》 * |
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Application publication date: 20200904 |