CN102938321B - A kind of manufacture method of high-power super accumulation power supply - Google Patents
A kind of manufacture method of high-power super accumulation power supply Download PDFInfo
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- CN102938321B CN102938321B CN201210505263.9A CN201210505263A CN102938321B CN 102938321 B CN102938321 B CN 102938321B CN 201210505263 A CN201210505263 A CN 201210505263A CN 102938321 B CN102938321 B CN 102938321B
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- power supply
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- super accumulation
- insulating barrier
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Abstract
The invention discloses a kind of manufacture method of high-power super accumulation power supply, it is characterized in that, comprise the steps: (1) preparation dielectric insulation material ink and interior electrode conductive material ink; (2) make the stacked printing speed green compact of 3D, generate laminated chips; (3) drying process is carried out to laminated chips; (4) isostatic pressed process is carried out to laminated chips; (5) sintering processes is carried out to laminated chips; (6) chamfered is carried out to laminated chips; (7) termination electrode of laminated chips is made; (8) laminated chips tested and pack.
Description
Technical field
The invention belongs to electron stored energy field, specifically, relate to a kind of manufacture method of high-power super accumulation power supply.
Background technology
The current emerging strategic industries that is representative with electric automobile, new forms of energy (wind energy, solar energy), the military industry that the intelligent grid being representative with peak load regulation network, peak load shifting and electromagnetic aircraft big gun are representative all encounters unprecedented difficulty, stagnation, have difficulty in taking a step, its basic reason lacks the super accumulation power supply of high-efficiency high-power exactly.
Up to the present, people have explored and have developed the electric energy energy storage mode of various ways, wherein with chemical energy storage battery and ultracapacitor energy storage (ElectricalDoule-LayerCapacitor is called for short EDLC), multilayer ceramic capacitor (Multi-layerceramiccapacitors is called for short MLCC) most representativeness.
Energy-storage battery in the market mainly contains the chemical cells such as lead-acid battery, Ni-MH battery, liquid stream vanadium cell, lithium battery, fuel cell.This kind of chemical cell, by the transfer process of chemical energy one electric energy, realizes storage and the release of energy.And be that the chemical cell of representative has been tending towards the limit in energy density with lithium battery, and charge/discharge rates is slow, high-power lithium battery exists potential safety hazard etc.
For overcoming the difficult problem that above-mentioned chemical cell exists, EDLC is due to charge/discharge rates fast (in second minute), what obtained in nearly ten years develops rapidly, its principle is based on employing high specific surface area electrode material, increase capacitance, the ultracapacitor of up to ten thousand farads can manufacture.But the monomer module voltage of EDLC low (<3 volt), energy storage is little, and the specific energy of double electric layer capacitor best at present only has 1/10th of lithium battery.
Though MLCC has the advantages such as the discharge and recharge fast life-span is long, safe and reliable, because capacitance is little, energy storage is not enough, the method that there is no at present is for large power energy storage.
Therefore current energy storage technology seriously constrains the development of emerging strategic industries, intelligent grid and military industry.
Therefore be necessary that a kind of new energy storage technology of exploitation is to overcome the defect of prior art.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of manufacture method of high-power super accumulation power supply, and storage power of the present invention is large, discharge and recharge is fast and self-discharge rate is little.
The present invention adopts following technical scheme to realize goal of the invention:
A manufacture method for high-power super accumulation power supply, is characterized in that, comprises the steps:
(1) dielectric insulation material ink and interior electrode conductive material ink is prepared;
(2) make the stacked printing speed green compact of 3D, generate laminated chips;
(3) drying process is carried out to laminated chips;
(4) isostatic pressed process is carried out to laminated chips;
(5) sintering processes is carried out to laminated chips;
(6) chamfered is carried out to laminated chips;
(7) termination electrode of laminated chips is made;
(8) laminated chips tested and pack,
Described step (2) comprises the steps:
(2.1) on substrate, the dielectric insulation material of print setting size, i.e. the first insulating barrier;
(2.2) electrode conductive material, i.e. the first conductive layer in print setting size above the first insulating barrier, limit, the left side snap of wherein said first conductive layer and described first insulating barrier, all the other each limits and each limit of the first insulating barrier all reserve default limit of staying and measure;
(2.3) dielectric insulation material of print setting size again above the first conductive layer, i.e. the second insulating barrier;
(2.4) above the second insulating barrier, print electrode conductive material in one deck again, i.e. the second conductive layer, the right edge snap of wherein said second conductive layer and described second insulating barrier, all the other each limits and each limit of the second insulating barrier all reserve default limit of staying and measure;
(2.5) above the second conductive layer, print one deck dielectric insulation material the same with the second thickness of insulating layer again, namely the 3rd insulating barrier, completes one-period;
(2.6) step (2.2)-(2.6) are repeated according to the requirement of design in advance.
As the further restriction to the technical program, described dielectric insulation material ink and interior electrode conductive material ink contain dispersant, and described dispersant is one or several in ethanol, acetylacetone,2,4-pentanedione, polyvinyl alcohol.
As the further restriction to the technical program, described dielectric insulation material ink material comprises and carries out with metal, rare earth metal, metal oxide, alkali-free glass, high-molecular organic material adulterate coated high-purity nano barium titanate, barium strontium titanate or CaCu 3 Ti 4 O powder.
As the further restriction to the technical program, described metal comprise in calcium (Ca), zirconium (Zr), manganese (Mn), zinc (Zn), magnesium (Mg) one or several.
As the further restriction to the technical program, described rare earth metal comprises one or more in dysprosium (Dy), erbium (Er), holmium (H0), yttrium (Y), ytterbium (Yb), gallium (Ga), neodymium (Nd), platinum (PT), samarium (Sm) and gadolinium (Gd).
As the further restriction to the technical program, described metal oxide comprises alundum (Al2O3) (Al
2o
3), cobalt oxide (CoO), bismuth oxide (Bi
2o
3) in one or more.
As the further restriction to the technical program, described high-molecular organic material comprises one or more in polyimides, PETG, polytetrafluoroethylene.
As the further restriction to the technical program, described interior electrode conductive material ink material comprises single-layer graphene, graphene microchip, one or more in nano carbon tube, active carbon and aluminium powder, nickel powder, silver powder.
As the further restriction to the technical program, the baking temperature of described green compact is at 300-400 DEG C, and hydrostatic pressure is 3-10MP
a, sintering temperature is 500-1300 DEG C.
Compared with prior art, advantage of the present invention and good effect are: the specific energy of high-power super accumulation power supply of the present invention can reach 200-1500 (Wh/Kg), specific power can reach 1000 ~ 2000W/Kg, take lithium battery as the chemical cell of representative significantly more than existing and take double electric layers supercapacitor as the physical battery of representative.This product has discharge and recharge fast (10 seconds ~ 5 minutes), and cycle life is greater than 10000 times, and self-discharge rate is less than 0.1% in 30 days, the feature of safe and reliable and green non-pollution.This product is expected to replace lithium rechargeable battery and double electric layers supercapacitor, as power supply or energy storage device in the industries such as electric automobile, wind energy, solar energy storage, electric tool, all kinds of lighting and communication class electronic product.The present invention is based on the stacked printing technique of 3D and novel nano-material technology.
One of its core technology utilizes the stacked printing speed technology of 3D, and manufacture high-power super accumulation power supply, compare with double electric layers supercapacitor technology of preparing with existing multi-layer ceramic capacitance (MLCC), easily and fast, cost is low, and performance is good.
Two of core technology of the present invention is that to utilize take Graphene as the high-specific surface area of representative, and high conductive material is inner electrode, and compared with common inner electrode, interior electrode area increases by 500 above.
According to the computing formula C=ε x ε of capacitor
0xS/d; ε relative dielectric constant; ε
0permittivity of vacuum 8.86 × 10
-12unit F/m; Area S, unit square rice; Polar plate spacing d, unit rice.Under identical circumstances, capacitance increases more than 5 times.
Three of core technology of the present invention is for dielectric insulation material with the inorganic nano material containing calcium, barium, magnesium, aluminium, titanium and multiple rare earth metal, its relative dielectric constant is 800 ~ 1,000, adjustable between 000, the height of the resistance to piezoelectric field >300V/um of its film shape.Because it has the withstand voltage field intensity of superelevation, the withstand voltage of volt more a few than double electric layers supercapacitor improves 100 times.
According to the energy balane formula of electric capacity, E=1/2CV
2, E energy storage (J), C is electric capacity (F), V is voltage (V).Energy density is double electric layer capacitor 10000 times.
Adopt manufacture method of the present invention, being easy to produce can energy storage 50KWh(50 degree electricity) high-power super accumulation power supply.For the electric automobile of power 10kw with the speeds 500km of 100km/h, within 5 minutes in charging station, just can be full of electricity, convenient as automobile fuel filler.
Accompanying drawing explanation
Fig. 1 is the production procedure schematic diagram of patent high-power super accumulation power supply of the present invention.
Fig. 2 is the generalized section of patent high-power super accumulation power supply of the present invention.
Fig. 3 is the contour structures schematic diagram of patent high-power super accumulation power supply of the present invention.
In figure, 1. is electrode conductive material 3. termination electrode in insulating dielectric materials 2..
Embodiment
Below in conjunction with accompanying drawing and preferred embodiment, the present invention is further described in detail.
In order to more clearly the present invention is described, illustrate content of the present invention further below in conjunction with example, but the present invention is not limited only to example below.
embodiment one:
This example provide a kind of with Graphene be interior electrode conductive material, the manufacture method of the doping vario-property nano barium phthalate high-power super accumulation power supply that is insulating dielectric materials.First by the ink that configures under the control of the computer, adopt the stacked printing speed technology of 3D, along thickness side, insulating dielectric materials and inner electrode are successively printed green compact respectively, be formed by stacking, then by manufacture technics high-power super accumulation power supplies such as drying, isostatic pressed, sintering, chamfering, termination electrode making, test, packagings.
Specifically comprise the steps:
(1) in doping vario-property nano barium carbonate powder, add ethanol, acetylacetone,2,4-pentanedione preparation dielectric insulation material ink, in Graphene, add ethanol, acetylacetone,2,4-pentanedione preparation conductive ink is for subsequent use.
(2) first on substrate, printing a layer thickness is 0.1mm, and length and width are respectively 10.4mm, 5.4mm, doping vario-property nano barium phthalate dielectric insulation material, i.e. the first insulating barrier.
(3) above the first insulating barrier, the graphene conductive material that a layer thickness is 1um, length and width are respectively 10.2mm, 5.0mm is printed, i.e. the first conductive layer, wherein limit, the left side snap of a limit and dielectric insulation material, all the other each limits and each limit of the first insulating barrier all reserve default limit of staying and measure, and this example is reserved limit amount and is 0.2mm.
(4) on the first conductive layer, printing a layer thickness again is 3um, and length and width are respectively 10.4mm, 5.4mm doping vario-property nano barium phthalate dielectric insulation material, i.e. the second insulating barrier.
(5) be 1um printing a layer thickness on the second insulating barrier again, length and width are respectively the graphene conductive material of 10.2mm, 5.0mm, i.e. the second conductive layer, wherein a limit and dielectric insulation material right edge snap, all the other each limits and each limit of insulating material all reserve default limit of staying and measure, and this example is reserved limit amount and is 0.2mm.Doping vario-property nano barium phthalate dielectric insulation material thickness between two layer graphenes is 3um, the right opposite very 50mm of two layer graphenes
2.
(6) print again on the second conductive layer one deck the same with the second thickness of insulating layer doping vario-property nano barium phthalate dielectric insulation material, complete one-period.
(7) step (3) is repeated to step (6) 499 times.
(8) the thick doping vario-property nano barium phthalate dielectric insulation material of one deck 0.1mm is printed in the top of lamination.Wherein ground floor and last one deck are protective layer, and its puncture voltage is much larger than the dielectric layer of inside.
(9) laminated chips of above-mentioned manufacture is placed on high temperature furnace inner drying binder removal, dump temperature is at 300 DEG C
(10) isostatic pressed process is carried out by after above-mentioned laminated chips binder removal.Hydrostatic pressure is at 3MP
a
(11) high temperature sintering is carried out by after the process of above-mentioned laminated chips isostatic pressed, sintering temperature 800 DEG C
(12) external electrode electroplating processes is carried out at the chip two ends after above-mentioned laminated chips high temperature sintering, obtain a high-power super accumulation power supply chip.
In this example, high-power super accumulation power supply chip has 1000 layer graphene conductive layers, and form a capacity plate antenna between every two layer graphenes, such high-power super accumulation power supply chip is composed in parallel by 999 capacity plate antennas.Each high-power super accumulation power supply chip thickness is 0.1mm+ (0.001+0.003) x2x500+0.1=8.2mm, and volume is 10.4mmx5.4mmx8.2mm=461mm
3=0.461cm
3.Wherein shared by interior electrode graphite alkene, volume is 10.2mmx5.0mmx0.001mmx2x500=51mm
3=0.051cm
3. shared by doping vario-property nano barium phthalate, volume is: 0.461cm
3-0.051cm
3=0.41cm
3.The proportion 2g/cm of interior electrode graphite alkene
3, insulating material doping vario-property nano barium phthalate is proportion 6g/cm
3.The quality that can calculate a high-power super accumulation power supply chip is thus 0.41x6+0.051x2=2.562g.
In in this example, electrode right opposite amasss as 50mm
2.Owing to adopting Graphene to be interior electrode conductive material, its specific area is more than 5 times of common material.In this example, be equivalent to right opposite increase at least 5 times, in 5 times, interior electrode area is expanded as 250mm
2.
In this example, the dielectric constant of doping vario-property nano barium phthalate insulating dielectric materials reaches 20000, and dielectric layer is withstand voltage reaches 300V/um, according to formula C=ε x ε
0xS/d calculates, electric capacity=20000x8.86 × 10 of a high-power super accumulation power supply chip
-12x250x10
-6/ 0.000003x999=0.01469 (F).The dielectric insulation material that 3um is thick can bear 900V voltage, the ENERGY E=1/2CV of a high-power super accumulation power supply chip memory
2=0.5x0.01469x900
2=5949.5 (J)/3600 second=1.65wh.Store 50kwh electric energy, need 50kwhx1000/1.6526=30256 high-power super accumulation power supply chip.
The high-power super accumulation power supply gross mass of 30256 high-power super accumulation power supply chip compositions is 30256x2.562g=77516g ≈ 77.5kg.Cumulative volume is: 0.461cm
3x30256=13948cm
3≈ 13.95dm
3(liter), total capacitance is: 30256X0.01469 (F) ≈ 444.5F.
In this example, high-power super accumulation power supply specific energy is 50kwx1000/77.5kg ≈ 645wh/kg.
In this example, high-power super accumulation power supply volumetric specific energy is 50kwx1000/13.95dm
3≈ 3585wh/dm
3.
embodiment two:
This example provide a kind of with nano barium titanate copper calcium be dielectric insulation material, nano-nickel powder is the manufacture method of the high-power super accumulation power supply of interior electrode conductive material.First by the ink that configures under the control of the computer, adopt the stacked printing speed technology of 3D, along thickness side, nano barium titanate copper calcium and nano-nickel powder are successively printed green compact respectively, be formed by stacking, then by manufacture technics high-power super accumulation power supplies such as drying, isostatic pressed, sintering, chamfering, termination electrode making, test, packagings.
Specifically comprise the steps:
(1) in nano barium titanate copper calcium powder body, add polyvinyl alcohol, acetylacetone,2,4-pentanedione preparation dielectric insulation material ink, in nano-nickel powder, add polyvinyl alcohol, acetylacetone,2,4-pentanedione preparation conductive ink is for subsequent use.
(2) first on substrate, the nano barium titanate copper calcium insulating dielectric materials (the first insulating barrier) that printing a layer thickness is 0.1mm, length and width are respectively 10.4mm, 5.4mm.
(3) above the first insulating material, the nano-nickel powder conductive layer (the first conductive layer) that a layer thickness is 1um, length and width are respectively 10.2mm, 5.0mm is printed, wherein limit, the left side snap of a limit and dielectric insulation material, all the other each limits and each limit of insulation material layer all reserve default limit of staying and measure, and this example is reserved limit amount and is 0.2mm.
(4) on the first conductive layer, printing a layer thickness again is 3um, and length and width are respectively 10.4mm, 5.4mm nano barium titanate copper calcium dielectric insulation material (the second insulating barrier).
(5) on the second insulating barrier, printing a layer thickness again is 1um, and length and width are respectively the nano-nickel powder electric conducting material (the second conductive layer) of 10.2mm, 5.0mm.The wherein right side bar limit snap of a limit and dielectric insulation material, all the other each limits and each limit of insulating material all reserve default limit of staying and measure, and this example is reserved limit amount and is 0.2mm.Between two-layer nano-nickel powder to mix nano barium titanate copper calcium dielectric insulation material thickness be 3um, the right opposite very 50mm of two-layer nano-nickel powder
2.
(6) print again on the second conductive layer one deck the same with the second thickness of insulating layer nano barium titanate copper calcium dielectric insulation material, complete one-period.
(7) step 3 is repeated to step 6 499 times.
(8) the nano barium titanate copper calcium insulation dielectric layer that one deck 0.1mm is thick is printed in the top of lamination.Wherein ground floor and last one deck are protective layer, and its puncture voltage is much larger than the dielectric layer of inside.
(9) laminated chips of above-mentioned preparation is placed on high temperature furnace inner drying binder removal, dump temperature is at 350 DEG C
(10) isostatic pressed process is carried out by after said chip binder removal.Hydrostatic pressure is at 5MP
a
(11) sinter after the process of said chip isostatic pressed, sintering temperature 1000 DEG C
(12) external electrode electroplating processes is carried out at the chip two ends after said chip high temperature sintering, obtain a high-power super accumulation power supply chip.
In this example, high-power super accumulation power supply chip has 1000 layers of nano-nickel powder conductive layer, and form a capacity plate antenna between every two-layer nano-nickel powder, such high-power super accumulation power supply chip is composed in parallel by 999 capacity plate antennas.Each high-power super accumulation power supply chip thickness is 0.1mm+ (0.001+0.003) x2x500+0.1=8.2mm, and volume is 10.4mmx5.4mmx8.2mm=461mm
3=0.461cm
3.Wherein shared by interior electrode graphite alkene, volume is 10.2mmx5.0mmx0.001mmx2x500=51mm
3=0.051cm
3. shared by doped titanic acid copper calcium, volume is: 0.461cm
3-0.051cm
3=0.41cm
3.The proportion 8.9g/cm of interior electrode nano-nickel powder
3, insulating material nano barium titanate copper calcium is proportion 6.2g/cm
3.The quality that can calculate a high-power super accumulation power supply chip is thus 0.41x6.2+0.051x8.9=3.016g.
In in this example, electrode right opposite amasss as 50mm
2.In this example, the dielectric constant of doping vario-property nano barium phthalate insulating dielectric materials reaches 80000, and dielectric layer is withstand voltage reaches 300V/um, according to formula C=ε x ε
0xS/d calculates, electric capacity=80000x8.86 × 10 of a high-power super accumulation power supply chip
-12x50x10
-6/ 0.000003x999 ≈ 0.01175 (F).
The dielectric insulation material that 3um is thick can bear 900V voltage, the ENERGY E=1/2CV of a high-power super accumulation power supply chip memory
2=0.5x0.01175x900
2=4758.75 (J)/3600 second ≈ 1.32wh.Store 50kwh electric energy, need 50kwhx1000/1.32 ≈ 37828 high-power super accumulation power supply chips.
The high-power super accumulation power supply gross mass of 37828 high-power super accumulation power supply chip compositions is 37828x3.016g=114089g ≈ 114kg.Cumulative volume is: 0.461cm
3x37828=17438.7cm
3≈ 17.4dm
3(liter), total capacitance is: 444.48F.
In this example, high-power super accumulation power supply specific energy is 50kwx1000/114kg ≈ 438wh/kg
In this example, high-power super accumulation power supply volumetric specific energy is 50kwx1000/17.4dm
3≈ 2867wh/dm
3.
embodiment three:
This example provides a kind of doping vario-property nano barium-strontium titanate and is insulating dielectric materials, take nanometer aluminium powder as the manufacture method of the high-power super accumulation power supply of interior electrode conductive material.First by the ink that configures under the control of the computer, adopt the stacked printing speed technology of 3D, along thickness side, nano barium-strontium titanate and nanometer aluminium powder are successively printed green compact respectively, be formed by stacking, then by manufacture technics high-power super accumulation power supplies such as drying, isostatic pressed, sintering, chamfering, termination electrode making, test, packagings.
Specifically comprise the steps:
(1) in doping vario-property nano barium-strontium titanate powder, add ethanol, polyvinyl alcohol preparation dielectric insulation material ink, in nanometer aluminium powder, add ethanol, polyvinyl alcohol preparation conductive ink is for subsequent use.
(2) first on substrate, print a layer thickness be 0.1mm length and width be respectively 10.4mm, 5.4mm doping vario-property nano barium-strontium titanate dielectric insulation material (the first insulating barrier).
(3) above the first insulating barrier, the nanometer aluminium powder electric conducting material (the first conductive layer) that a layer thickness is 1um, length and width are respectively 10.2mm, 5.0mm is printed.Wherein limit, the left side snap of a limit and dielectric insulation material, all the other each limits and each limit of the first insulating barrier all reserve default limit of staying and measure, and this example is reserved limit amount and is 0.2mm.
(4) on the first conductive layer, printing a layer thickness again is 3um, and length and width are respectively 10.4mm, 5.4mm doping vario-property nano barium-strontium titanate dielectric insulation material (the second insulating barrier).
(5) be 1um printing a layer thickness on the second insulating barrier again, length and width are respectively the nanometer aluminium powder electric conducting material (the second conductive layer) of 10.2mm, 5.0mm.The wherein right side bar limit snap of a limit and dielectric insulation material, all the other each limits and each limit of insulating material all reserve default limit of staying and measure, and this example is reserved limit amount and is 0.2mm.Doping vario-property nano barium-strontium titanate dielectric insulation material thickness between two-layer nanometer aluminium powder is 3um, the right opposite very 50mm of two-layer nanometer aluminium powder
2.
(6) print again on the second conductive layer one deck the same with the second thickness of insulating layer doping vario-property nano barium-strontium titanate dielectric insulation material, complete one-period.
(7) step 3 is repeated to step 6 499 times.
(8) the thick doping vario-property nano barium-strontium titanate dielectric insulation material of one deck 0.1mm is printed in the top of lamination.Wherein ground floor and last one deck are protective layer, and its puncture voltage is much larger than the dielectric layer of inside.
(9) laminated chips of above-mentioned preparation is placed on high temperature furnace inner drying binder removal, dump temperature is at 300 DEG C
(10) isostatic pressed process is carried out by after above-mentioned laminated chips binder removal.Hydrostatic pressure is at 10MP
a
(11) sinter after the process of above-mentioned laminated chips isostatic pressed, sintering temperature 550 DEG C.
(12) external electrode electroplating processes is carried out at the chip two ends after above-mentioned laminated chips high temperature sintering, obtain a high-power super accumulation power supply chip.
In this example, high-power super accumulation power supply chip has 1000 layers of nanometer aluminium powder conductive layer, and form a capacity plate antenna between every two-layer nanometer aluminium powder, such high-power super accumulation power supply chip is composed in parallel by 999 capacity plate antennas.Each high-power super accumulation power supply chip thickness is 0.1mm+ (0.001+0.003) x2x500+0.1=8.2mm, and volume is 10.4mmx5.4mmx8.2mm=461mm
3=0.461cm
3.Wherein shared by interior electrode nanometer aluminium powder, volume is 10.2mmx5.0mmx0.001mmx2x500=51mm
3=0.051cm
3.Shared by doping vario-property nano barium-strontium titanate, volume is: 0.461cm
3-0.051cm
3=0.41cm
3.The proportion 2.7g/cm of interior electrode nanometer aluminium powder
3, insulating material doping vario-property nano barium-strontium titanate is proportion 6g/cm
3.The quality that can calculate a high-power super accumulation power supply chip is thus 0.461x6+0.051x2.7=2.598g.
In in this example, electrode right opposite amasss as 50mm
2.In this example, the dielectric constant of doping vario-property nano barium-strontium titanate insulating dielectric materials reaches 25000, and dielectric layer is withstand voltage reaches 500V/um, according to formula C=ε x ε
0xS/d calculates, electric capacity=25000x8.86 × 10 of a high-power super accumulation power supply chip
-12x50x10
-6/ 0.000003x999 ≈ 0.003673 (F).The dielectric insulation material that 3um is thick can bear 1500V voltage, the ENERGY E=1/2CV of a high-power super accumulation power supply chip memory
2=0.5x0.003673x1500
2=4132.1 (J)/3600 second ≈ 1.148wh.Store 50kwh electric energy, need 50kwhx1000/1.148 ≈ 43555 high-power super accumulation power supply chips.
The high-power super accumulation power supply gross mass of 43555 high-power super accumulation power supply chip compositions is 43555x2.598g=113155.9g ≈ 113.2kg.Cumulative volume is: 0.461cm
3x43555=20078.9cm
3≈ 20.8dm
3(liter), total capacitance is: 43555X0.003673 (F) ≈ 160F.
In this example, high-power super accumulation power supply specific energy is 50kwx1000/113.2kg ≈ 441.7wh/kg.
In this example, high-power super accumulation power supply volumetric specific energy is 50kwx1000/20.8dm
3≈ 2403.8wh/dm
3.
Certainly, above-mentioned explanation is not limitation of the present invention, and the present invention is also not limited only to above-mentioned citing, and the change that those skilled in the art make in essential scope of the present invention, remodeling, interpolation or replacement, also belong to protection scope of the present invention.
Claims (9)
1. a manufacture method for high-power super accumulation power supply, is characterized in that, comprises the steps:
(1) dielectric insulation material ink and interior electrode conductive material ink is prepared;
(2) make the stacked printing speed green compact of 3D, generate laminated chips;
(3) drying process is carried out to laminated chips;
(4) isostatic pressed process is carried out to laminated chips;
(5) sintering processes is carried out to laminated chips;
(6) chamfered is carried out to laminated chips;
(7) termination electrode of laminated chips is made;
(8) laminated chips tested and pack,
Described step (2) comprises the steps:
(2.1) on substrate, the dielectric insulation material of print setting size, i.e. the first insulating barrier;
(2.2) electrode conductive material, i.e. the first conductive layer in print setting size above the first insulating barrier, limit, the left side snap of wherein said first conductive layer and described first insulating barrier, all the other each limits and each limit of the first insulating barrier all reserve default limit of staying and measure;
(2.3) dielectric insulation material of print setting size again above the first conductive layer, i.e. the second insulating barrier;
(2.4) above the second insulating barrier, print electrode conductive material in one deck again, i.e. the second conductive layer, the right edge snap of wherein said second conductive layer and described second insulating barrier, all the other each limits and each limit of the second insulating barrier all reserve default limit of staying and measure;
(2.5) above the second conductive layer, print one deck dielectric insulation material the same with the second thickness of insulating layer again, namely the 3rd insulating barrier, completes one-period;
(2.6) step (2.2)-(2.5) are repeated according to the requirement of design in advance.
2. the manufacture method of high-power super accumulation power supply according to claim 1, it is characterized in that, described dielectric insulation material ink and interior electrode conductive material ink contain dispersant, and described dispersant is one or several in ethanol, acetylacetone,2,4-pentanedione, polyvinyl alcohol.
3. the manufacture method of high-power super accumulation power supply according to claim 1, it is characterized in that, described dielectric insulation material ink material comprises and carries out with metal, rare earth metal, metal oxide, alkali-free glass, high-molecular organic material adulterate coated high-purity nano barium titanate, barium strontium titanate or CaCu 3 Ti 4 O powder.
4. the manufacture method of high-power super accumulation power supply according to claim 3, it is characterized in that, described metal comprise in calcium (Ca), zirconium (Zr), manganese (Mn), zinc (Zn), magnesium (Mg) one or several.
5. the manufacture method of high-power super accumulation power supply according to claim 3, it is characterized in that, described rare earth metal comprises dysprosium (Dy), erbium (Er), holmium (H0), yttrium (Y), ytterbium (Yb), gallium (Ga), neodymium (Nd), platinum (PT), samarium (Sm) and gadolinium
(Gd) one or more in.
6. the manufacture method of high-power super accumulation power supply according to claim 3, is characterized in that, described metal oxide comprises one or more in alundum (Al2O3) (Al2O3), cobalt oxide (CoO), bismuth oxide (Bi2O3).
7. the manufacture method of high-power super accumulation power supply according to claim 3, is characterized in that, described high-molecular organic material comprises one or more in polyimides, PETG, polytetrafluoroethylene.
8. the manufacture method of high-power super accumulation power supply according to claim 1, it is characterized in that, described interior electrode conductive material ink material comprises single-layer graphene, graphene microchip, one or more in nano carbon tube, active carbon and aluminium powder, nickel powder, silver powder.
9. the manufacture method of high-power super accumulation power supply according to claim 1, is characterized in that, the baking temperature of described green compact is at 300-400 DEG C, and hydrostatic pressure is 3-10MPa, and sintering temperature is 500-1300 DEG C.
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| CN105609328A (en) * | 2015-09-06 | 2016-05-25 | 广东风华高新科技股份有限公司 | Preparation method of electrode slice |
| BE1024491B1 (en) * | 2016-08-11 | 2018-03-12 | Safran Aero Boosters S.A. | TURBOMACHINE OIL TANK WITH LEVEL MEASUREMENT |
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| CN1447640A (en) * | 2002-03-22 | 2003-10-08 | Uht株式会社 | Mfg. appts. of laminator |
| CN1959859A (en) * | 2005-11-02 | 2007-05-09 | 三星电机株式会社 | Polymer-ceramic dielectric composition, embedded capacitor and printed circuit board |
| CN101587775A (en) * | 2008-05-21 | 2009-11-25 | 株式会社村田制作所 | Laminated electronic component and method for manufacturing the same |
| CN101654360A (en) * | 2008-08-19 | 2010-02-24 | 达方电子股份有限公司 | Ceramic powder composition, ceramic material and multilayer ceramic capacitor made thereby |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1447640A (en) * | 2002-03-22 | 2003-10-08 | Uht株式会社 | Mfg. appts. of laminator |
| CN1959859A (en) * | 2005-11-02 | 2007-05-09 | 三星电机株式会社 | Polymer-ceramic dielectric composition, embedded capacitor and printed circuit board |
| CN101587775A (en) * | 2008-05-21 | 2009-11-25 | 株式会社村田制作所 | Laminated electronic component and method for manufacturing the same |
| CN101654360A (en) * | 2008-08-19 | 2010-02-24 | 达方电子股份有限公司 | Ceramic powder composition, ceramic material and multilayer ceramic capacitor made thereby |
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