CN111613963A - Solid yellow laser - Google Patents
Solid yellow laser Download PDFInfo
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- CN111613963A CN111613963A CN202010527304.9A CN202010527304A CN111613963A CN 111613963 A CN111613963 A CN 111613963A CN 202010527304 A CN202010527304 A CN 202010527304A CN 111613963 A CN111613963 A CN 111613963A
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- Prior art keywords
- laser
- crystal
- frequency
- plated
- frequency doubling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1671—Solid materials characterised by a crystal matrix vanadate, niobate, tantalate
- H01S3/1673—YVO4 [YVO]
Abstract
The invention discloses a solid yellow laser, which can be used for synthesizing frequency to emit yellow light without using 1064nm, 1342nm or 1064nm and 1320nm spectral lines and exciting 1064 laser to do Raman frequency shift to emit yellow light at frequency multiplication, and the invention adopts plating films on Nd3+: YVO4 crystal, frequency multiplication crystal and output cavity mirror according to Nd3+: YVO4 crystal has 1177nm radiation spectral line, so that the spectral lines with large emission sections of Nd3+: YVO4 crystal S1 and output cavity mirror D1 do not generate resonance, and only allows 1177nmpuxian excited radiation of 3+: YVO4 crystal to amplify to generate 1177nm laser and generate stable 588.5nm yellow laser.
Description
Technical Field
The invention relates to the technical field of laser, in particular to a solid yellow laser.
Background
Yellow light refers to light with the wavelength of 570nm to 590nm, and laser in a yellow light waveband is widely applied to the fields of biomedicine, military research, atmospheric environment monitoring and the like; at present, the technology for realizing all-solid-state yellow light, especially yellow laser, includes nonlinear sum frequency, frequency doubling after raman frequency shift, or realization through raman frequency shift after laser frequency doubling; the nonlinear sum frequency technology is characterized in that neodymium ion doped laser materials are used for emitting light with the wavelength of 1.06 mu m and 1.3 mu m, yellow light output is realized in the mode of sum frequency outside a cavity or sum frequency inside the cavity through a nonlinear optical crystal, the mode of sum frequency outside the cavity or sum frequency inside the cavity relates to a complex laser cavity structure and a coating mode, and at least two crystals are required: the sum frequency process is realized by a laser crystal and a frequency doubling crystal; the Raman frequency-shifted frequency doubling technology is mainly characterized in that 1.18 mu m Raman laser is realized by utilizing a Raman frequency shifting medium after 1.06 mu m laser is emitted by neodymium laser, then yellow light output is realized by frequency doubling, the laser frequency-doubled Raman frequency shifting technology is realized by utilizing a frequency doubling technology after 1.06 mu m laser is emitted by neodymium laser, and then Raman frequency shift of the Raman frequency shifting medium is utilized to realize yellow light output; the raman frequency shift technology is a three-order nonlinear optical process, the required light intensity is high, and meanwhile, the structure and design of the raman frequency shift technology are complex no matter the frequency doubling is performed after the raman frequency shift or the raman is performed after the laser frequency doubling, and the requirement of yellow light industrialization is difficult to achieve.
Disclosure of Invention
The invention aims to provide a solid yellow laser to solve the problems that the yellow laser proposed in the background art is complex in structural design and difficult to industrialize.
In order to achieve the purpose, the invention provides the following technical scheme that the solid yellow laser sequentially comprises a pumping source, a convex lens, Nd3+, YVO4 crystals, a frequency doubling crystal and an output cavity mirror, wherein Nd3+: one end surface S1 of the YVO4 crystals corresponding to the convex lens is plated with an anti-reflection film of 808nm, a total reflection film of 1177nm, a high-transmission film of 1342nm, 914nm and 1030-1110 nm, and Nd3+: one end surface S2 of the YVO4 crystals corresponding to the frequency doubling crystal is plated with a total reflection film of 588.5nm, anti-reflection films of 1177nm, 1342nm and 1030-; two end faces of the frequency doubling crystal are plated with 1177nm and 588.5nm double-point antireflection films; one end face D1 of the output cavity mirror corresponding to the frequency doubling crystal is plated with a 1177nm full-reflection film, high-transmittance films of 1342nm, 914nm and 1050-1080 nm, and the other end face D2 of the output cavity mirror is plated with a 588.5nm high-transmittance film.
Preferably, the pump source is a 808nm laser diode.
Compared with the prior art, the invention has the beneficial effects that: according to the invention, two lasers or one laser are not needed to excite two spectral lines of 1064nm, 1342nm or 1064nm and 1320nm to combine frequency to emit yellow light, and the 1064 laser is also not needed to excite Raman frequency shift to emit yellow light at double frequency.
Drawings
FIG. 1 is a schematic view of the structure of the present invention.
In the figure: 1. a pump source; 2. a convex lens; 3. nd3+ YVO4 crystal; 3. frequency doubling crystals; 4. and an output cavity mirror.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, the dotted line in the figure is the route of laser, and the present invention provides a technical solution: a solid yellow laser sequentially comprises a pumping source 1, a convex lens 2, Nd3+, a YVO4 crystal 3, a frequency doubling crystal 4 and an output cavity mirror 5, wherein the pumping source 1 is a laser diode with 808nm, the Nd3+ is that an anti-reflection film with 808nm, a total reflection film with 1177nm and high transmission films with 1342nm, 914nm and 1030-1110 nm are plated on one end surface S1 of the YVO4 crystal 3 corresponding to the convex lens 2, and the Nd3+ is that a total reflection film with 588.5nm, anti-reflection films with 1177nm, 1342nm and 1030-1100nm and a high transmission film with 914nm are plated on one end surface S2 of the YVO4 crystal 3 corresponding to the frequency doubling crystal 4; two end faces of the frequency doubling crystal 4 are plated with 1177nm and 588.5nm double-point antireflection films; one end face D1 of the output cavity mirror 5 corresponding to the frequency doubling crystal is plated with a 1177nm full-reflection film, 1342nm, 914nm and 1050-1080 nm high-transmittance films, and the other end face D2 of the output cavity mirror 5 is plated with a 588.5nm high-transmittance film.
The working principle is as follows: the pump source 1 generates a 808nm spectral line, the 808nm spectral line is focused in an Nd3+: YVO4 crystal through a convex lens 2, then a resonant cavity formed between the Nd3+: S1 of the YVO4 crystal 3 and the D1 end face of the output cavity mirror 5 can enable the spectral lines with large emission sections such as 1040nm, 1064nm, 1085nm, 1342nm and 914nm not to generate resonance, only the 1177nm spectral line passes through Nd3+: the YVO4 crystal 3 to form stimulated radiation amplification to generate 1177nm laser, the oscillated 1177nm laser generates 588.5nm laser through a frequency doubling crystal 4, and the output cavity mirror 5 outputs 588.5nm out of the cavity mirror 5 to a high-transmittance film with 588.5 nm.
Although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that various changes in the embodiments and/or modifications of the invention can be made, and equivalents and modifications of some features of the invention can be made without departing from the spirit and scope of the invention.
Claims (2)
1. A solid yellow laser is characterized by sequentially comprising a pumping source (1), a convex lens (2), an Nd3+, a YVO4 crystal (3), a frequency doubling crystal (4) and an output cavity mirror (5), wherein one end surface S1, corresponding to the convex lens (2), of the Nd3+ YVO4 crystal (3) is plated with an anti-reflection film of 808nm, a total reflection film of 1177nm and high-transmission films of 1342nm, 914nm and 1030-1110 nm, and one end surface S2, corresponding to the frequency doubling crystal, of the Nd3+ YVO4 crystal is plated with a total reflection film of 588.5nm, anti-reflection films of 1177nm, 1342nm and 1030-1100nm and a high-transmission film of 914 nm; two end faces of the frequency doubling crystal (4) are respectively plated with 1177nm and 588.5nm double-point antireflection films; one end face D1 of the output cavity mirror (5) corresponding to the frequency doubling crystal (4) is plated with a 1177nm full-reflection film, high-transmittance films of 1342nm, 914nm and 1050-1080 nm, and the other end face D2 of the output cavity mirror (5) is plated with a 588.5nm high-transmittance film.
2. A solid-state yellow laser according to claim 1, characterized in that the pump source (1) is a 808nm laser diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010527304.9A CN111613963B (en) | 2020-06-11 | 2020-06-11 | Solid yellow laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010527304.9A CN111613963B (en) | 2020-06-11 | 2020-06-11 | Solid yellow laser |
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| Publication Number | Publication Date |
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| CN111613963A true CN111613963A (en) | 2020-09-01 |
| CN111613963B CN111613963B (en) | 2022-06-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202010527304.9A Active CN111613963B (en) | 2020-06-11 | 2020-06-11 | Solid yellow laser |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060039422A1 (en) * | 2004-08-23 | 2006-02-23 | Furukawa Co., Ltd. | Laser apparatus |
| CN201234055Y (en) * | 2008-06-30 | 2009-05-06 | 山东大学 | Coupling cavity type Raman frequency doubling completely solid yellow light laser |
| CN103944053A (en) * | 2014-05-09 | 2014-07-23 | 长春理工大学 | Full-solid-state single-spectral-line narrow linewidth yellow light laser |
| CN103996968A (en) * | 2014-05-27 | 2014-08-20 | 天津大学 | Self Raman yellow light laser of composite cavity structure |
| CN104953461A (en) * | 2015-07-03 | 2015-09-30 | 上海高意激光技术有限公司 | Solid laser based on twisted mode cavity and volume grating |
| CN106684674A (en) * | 2017-02-13 | 2017-05-17 | 天津大学 | Two-crystal compound gain inner cavity Raman yellow light laser |
-
2020
- 2020-06-11 CN CN202010527304.9A patent/CN111613963B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060039422A1 (en) * | 2004-08-23 | 2006-02-23 | Furukawa Co., Ltd. | Laser apparatus |
| CN201234055Y (en) * | 2008-06-30 | 2009-05-06 | 山东大学 | Coupling cavity type Raman frequency doubling completely solid yellow light laser |
| CN103944053A (en) * | 2014-05-09 | 2014-07-23 | 长春理工大学 | Full-solid-state single-spectral-line narrow linewidth yellow light laser |
| CN103996968A (en) * | 2014-05-27 | 2014-08-20 | 天津大学 | Self Raman yellow light laser of composite cavity structure |
| CN104953461A (en) * | 2015-07-03 | 2015-09-30 | 上海高意激光技术有限公司 | Solid laser based on twisted mode cavity and volume grating |
| CN106684674A (en) * | 2017-02-13 | 2017-05-17 | 天津大学 | Two-crystal compound gain inner cavity Raman yellow light laser |
Non-Patent Citations (1)
| Title |
|---|
| 李景镇: "《光学手册 下卷》", 31 July 2011 * |
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| CN111613963B (en) | 2022-06-07 |
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