CN111599855A - 一种SiC异质结晶体管外延结构及器件 - Google Patents

一种SiC异质结晶体管外延结构及器件 Download PDF

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CN111599855A
CN111599855A CN202010500900.8A CN202010500900A CN111599855A CN 111599855 A CN111599855 A CN 111599855A CN 202010500900 A CN202010500900 A CN 202010500900A CN 111599855 A CN111599855 A CN 111599855A
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epitaxial layer
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heterojunction transistor
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钮应喜
左万胜
刘洋
张晓洪
刘锦锦
袁松
胡新星
史田超
史文华
钟敏
郗修臻
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Wuhu Qidi Semiconductor Co ltd
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Abstract

本发明公开了一种SiC异质结晶体管外延结构及器件，所述SiC异质结晶体管外延结构由下至上依次包括C面4H‑SiC衬底、4H‑SiC外延层、N型3C‑SiC外延层；该结构中3C‑SiC与4H‑SiC形成的异质结具有可忽略的热匹配和晶格匹配，3C‑SiC和4H‑SiC在<0001>面的晶格失配小于0.1％，具有更好的界面结构。

Description

一种SiC异质结晶体管外延结构及器件
技术领域
本发明属于半导体技术领域，具体涉及一种SiC异质结晶体管外延结构及器件。
背景技术
目前全球95％以上的半导体元件，都是以第一代半导体材料硅作为基础功能材料，主要应用在微电子产业。不过，随着电动车、5G等新应用兴起，推动高频、高功率元件需求，基于硅材料的功率半导体的性能已经接近其物理极限，无法满足当今社会中对能源高效转换的要求，要进一步提高电力电子器件的性能则需诉诸于综合性能更优越的第三代半导体。
氮化镓GaN(gallium nitride)作为第三代半导体材料的代表之一，具有临界击穿电场强、耐高温和饱和电子漂移速度大等优点，在电力电子领域有广泛的应用前景。GaN基器件具有击穿电压高、开关频率高、工作结温高和导通电阻低等优点，可以应用在新型高效、大功率的电力电子系统。尤其AlGaN/GaN形成的异质结能够自发产生高浓度和高电子迁移率二维电子气2DEG，基于异质结的器件可以有效提升品质因子。
传统AlGaN/GaN形成的异质结，利用AlGaN势垒层中的压电极化和自发极化形成2DEG。其中压电极化是由于AlGaN势垒层晶格受GaN缓冲层影响发生形变所产生的。势垒层中Al组分越高，自发极化与压电极化效应越强、诱生的2DEG面密度越高。但是随着势垒层中Al组分的提高，AlGaN势垒层与GaN缓冲层之间的晶格失配增加，AlGaN势垒层所受张应力也更大，当势垒层厚度超过临界厚度时便会发生应变弛豫，产生大量失配位错及龟裂，势垒层材料质量严重退化，使得2DEG受到的界面粗糙度散射及缺陷散射的影响增强，2DEG的输运性能也会大大降低。
发明内容
为解决上述技术问题，本发明提供了一种SiC异质结晶体管外延结构及器件。该结构中3C-SiC与4H-SiC形成的异质结具有可忽略的晶格匹配，3C-SiC和4H-SiC在<0001>面的晶格失配小于0.1％，具有更好的界面结构。
本发明采取的技术方案为：
一种SiC异质结晶体管外延结构，所述SiC异质结晶体管外延结构由下至上依次包括C面4H-SiC衬底、4H-SiC外延层、N型3C-SiC外延层。
进一步地，所述C面4H-SiC衬底和4H-SiC外延层之间还包括P型4H-SiC缓冲层。
进一步地，所述C面4H-SiC衬底和4H-SiC外延层之间还包括P型4H-SiC外延层。
进一步地，所述C面4H-SiC衬底和4H-SiC外延层之间还包括P型4H-SiC缓冲层和P型4H-SiC外延层；所述P型4H-SiC缓冲层位于P型4H-SiC外延层的下面。
进一步地，所述P型4H-SiC缓冲层的厚度为20～200nm；所述P型4H-SiC缓冲层中Al掺杂浓度为1×1017cm-3～1×1018cm-3。P型4H-SiC缓冲层可缓冲衬底与P型4H-SiC掺杂浓度差形成的失配应力，厚度太薄难以有效缓冲失配应力，厚度太厚，降低器件耐压能力；掺杂浓度越低，降低耐压能力，掺杂浓度太高，失配应力变大，难以起到缓冲作用。
进一步地，所述P型4H-SiC外延层的厚度为5～15μm；所述P型4H-SiC外延层中Al掺杂浓度为3×1018cm-3～8×1019cm-3。P型4H-SiC外延层的厚度越厚，耐压能力越强，但生长时间越长，成本越高；掺杂浓度越高，耐压能力越强，晶体质量越差，缺陷密度越高，因此需控制掺杂浓度在3×1018cm-3～8×1019cm-3。
进一步地，所述4H-SiC外延层的厚度为5～10μm；其厚度越薄，界面粗糙度散射越强，降低2DEG迁移率；厚度越厚，生长时间越长，成本越高，因此控制其厚度为5～10μm。
所述N型3C-SiC外延层厚度为300～500nm，N型掺杂浓度1×1015cm-3～7×1017cm-3。其厚度越厚，掺杂浓度越低，导通电阻越高；厚度越薄，界面粗糙度散射越强，掺杂浓度越高，电离杂质散射强，降低2DEG迁移率。
本发明还提供了包含所述的SiC异质结晶体管外延结构的器件。
进一步地，所述的SiC异质结晶体管外延结构的器件在所述N型3C-SiC外延层上分别设置有源极、栅极、漏极；所述源极、漏极分别设置于N型3C-SiC外延层上的两端；所述栅极位于源极和漏极之间。
进一步地，所述栅极与源极之间设置有SiN隔离层；所述栅极与漏极之间设置有SiN隔离层。
与现有技术相比，本发明具有以下优点：
1.SiC异质结晶体管外延结构中的3C-SiC与4H-SiC形成的异质结具有可忽略的热匹配和晶格匹配，3C-SiC和4H-SiC在<0001>面的晶格失配小于0.1％，具有更好的界面结构；
2.在C面4H-SiC衬底在4H-SiC外延层之间插入P型4H-SiC缓冲层，和/或P型4H-SiC外延层，应用于耗尽型器件，在关态情况下，当耗尽型器件源端接地，栅极加载负压，漏端加载正电压时，器件体材料漏电路径主要是先垂直通过4H-SiC外延层，然后水平通过4H-SiC衬底与4H-SiC缓冲层界面，通过在4H-SiC外延层与衬底之间插入P型4H-SiC外延层形成高阻以阻断漏电通道，有效抑制漏电流，提高器件的击穿电压；
3.SiC异质结晶体管外延结构具备低导通电阻、高频、耐高温与耐高压等优势，可应用于1200伏特以上的高压环境，应用层面广泛，如风电、铁路等大型交通工具，及太阳能逆变器、不断电系统、智慧电网、电源供应器等高功率应用领域；
4.3C-SiC的饱和电子漂移速率、电子迁移率和空穴迁移率最高，而4H-SiC的禁带宽度和临界击穿场强最高；同时，3C-SiC禁带宽度为2.3eV，4H-SiC的禁带宽度高达3.2eV，禁带宽度差达0.9eV，由于禁带宽度相差大，3C-SiC与4H-SiC形成的异质结结构在异质结器件里有很大的潜力。
附图说明
图1为含有实施例1中的SiC异质结晶体管外延结构的器件示意图；
图2为含有实施例2中的SiC异质结晶体管外延结构的器件示意图；
图3为含有实施例3中的SiC异质结晶体管外延结构的器件示意图；
图4为含有实施例4中的SiC异质结晶体管外延结构的器件示意图；
图中：1-C面4H-SiC衬底、2-4H-SiC外延层、3-N型3C-SiC外延层、4-源极、5-肖特基接触栅电极、6-漏极、7-SiN隔离层、8-P型4H-SiC缓冲层、9-P型4H-SiC外延层。
具体实施方式
下面结合实施例对本发明进行详细说明。
实施例1
一种SiC异质结晶体管外延结构，所述SiC异质结晶体管外延结构由下至上依次包括C面4H-SiC衬底1、4H-SiC外延层2、N型3C-SiC外延层3。
所述SiC异质结晶体管外延结构的制备方法，包括以下步骤：
1)C面4H-SiC衬底原位刻蚀；选取偏向<11-20>方向4°或者8°的C面4H-SiC衬底，以50～300slm的流量通入H2，于50-500mbar压力和1350-1450℃温度下刻蚀5～10min；
2)4H-SiC外延层的生长:分别以50～300slm、80～200sccm和80～200sccm的流量通入H2、含氯的硅源气体和碳源，于1580～1650℃温度和50～500mbar压力，生长5～10μm厚的本征4H-SiC外延层；所述含氯的硅源气体为SiCl4，SiHCl3，SiH2C12或SiH3Cl；
3)N型3C-SiC外延层生长：分别以10～50slm、100～500sccm、100～500sccm、80～150sccm和15～50sccm的流量通入H2、硅源、碳源和N2，于1400～1500℃温度和100～500mbar压力下，生长300～500nm，掺杂浓度1×1015cm-3～7×1017cm-3SiC外延层；
4)在H2保护下降温至室温。
实施例2
一种SiC异质结晶体管外延结构，其他同实施例1，只是在所述C面4H-SiC衬底1和4H-SiC外延层2之间还包括P型4H-SiC缓冲层8。
所述SiC异质结晶体管外延结构的制备方法，其他同实施例1，所述P型4H-SiC缓冲层的生长方法为：停止通入HCl，分别以50～300slm、80～200sccm、80～200sccm和5～30sccm的流量通入载气H2、含氯的硅源气体、碳源和Al源，于1580～1650℃温度和50～500mbar压力，生长20～200nm厚的P型4C-SiC缓冲层，掺杂浓度1×1017cm-3～1×1018cm-3；所述含氯的硅源气体为SiCl4，SiHCl3，SiH2C12或SiH3Cl。
实施例3
一种SiC异质结晶体管外延结构，其他同实施例1，只是在所述C面4H-SiC衬底1和4H-SiC外延层2之间还包括P型4H-SiC外延层9。
所述SiC异质结晶体管外延结构的制备方法，其他同实施例1，所述P型4H-SiC外延层的生长方法为:分别以50～300slm、80～200sccm、80～200sccm和30～60sccm的流量通入载气H2、含氯的硅源气体、碳源和Al源，于1580～1650℃温度和50～500mbar压力，生长生长5～15μm厚的P型4C-SiC外延层，掺杂浓度3×1018cm-3～8×1019cm-3；所述含氯的硅源气体为SiCl4，SiHCl3，SiH2C12或SiH3Cl。
实施例4
一种SiC异质结晶体管外延结构，其他同实施例2，只是在所述P型4H-SiC缓冲层8和4H-SiC外延层2之间还包括P型4H-SiC外延层9；
所述SiC异质结晶体管外延结构的制备方法，其他同实施例2，所述P型4H-SiC外延层的生长方法为:分别以50～300slm、80～200sccm、80～200sccm和30～60sccm的流量通入载气H2、含氯的硅源气体、碳源和Al源，于1580～1650℃温度和50～500mbar压力，生长生长5～10μm厚的P型4C-SiC外延层，掺杂浓度3×1018cm-3～8×1019cm-3；所述含氯的硅源气体为SiCl4，SiHCl3，SiH2C12或SiH3Cl。
实施例5
包含SiC异质结晶体管外延结构的器件，其结构为：在各实施例制备得到的SiC异质结晶体管外延结构的N型3C-SiC外延层上分别设置源极4、肖特基接触栅电极5、漏极6；所述源极4、漏极6分别设置于N型3C-SiC外延层3上的两端；所述肖特基接触栅电极5位于源极4和漏极6之间。
进一步地，所述肖特基接触栅电极5与源极4之间设置有SiN隔离层7；所述肖特基接触栅电极5与漏极6之间设置有SiN隔离层7。
上述参照实施例对一种SiC异质结晶体管外延结构及器件进行的详细描述，是说明性的而不是限定性的，可按照所限定范围列举出若干个实施例，因此在不脱离本发明总体构思下的变化和修改，应属本发明的保护范围之内。

Claims (10)

1.一种SiC异质结晶体管外延结构，其特征在于，所述SiC异质结晶体管外延结构由下至上依次包括C面4H-SiC衬底、4H-SiC外延层、N型3C-SiC外延层。
2.根据权利要求1所述的SiC异质结晶体管外延结构，其特征在于，所述C面4H-SiC衬底和4H-SiC外延层之间还包括P型4H-SiC缓冲层。
3.根据权利要求1所述的SiC异质结晶体管外延结构，其特征在于，所述C面4H-SiC衬底和4H-SiC外延层之间还包括P型4H-SiC外延层。
4.根据权利要求1-3任意一项所述的SiC异质结晶体管外延结构，其特征在于，所述C面4H-SiC衬底和4H-SiC外延层之间还包括P型4H-SiC缓冲层和P型4H-SiC外延层；所述P型4H-SiC缓冲层位于P型4H-SiC外延层的下面。
5.根据权利要求2所述的SiC异质结晶体管外延结构，其特征在于，所述P型4H-SiC缓冲层的厚度为20～200nm；所述P型4H-SiC缓冲层中Al掺杂浓度为1×1017cm-3～1×1018cm-3。
6.根据权利要求3所述的SiC异质结晶体管外延结构，其特征在于，所述P型4H-SiC外延层的厚度为5～15μm；所述P型4H-SiC外延层中Al掺杂浓度为3×1018cm-3～8×1019cm-3。
7.根据权利要求1所述的SiC异质结晶体管外延结构，其特征在于，所述4H-SiC外延层的厚度为5～10μm；所述N型3C-SiC外延层厚度为300～500nm，掺杂浓度1×1015cm-3～7×1017cm-3。
8.一种包含权利要求1-7任意一项所述的SiC异质结晶体管外延结构的器件。
9.根据权利要求8所述的器件，其特征在于，所述N型3C-SiC外延层上分别设置有源极、栅极、漏极；所述源极、漏极分别设置于3C-SiC外延层上的两端；所述栅极位于源极和漏极之间。
10.根据权利要求9所述的器件，其特征在于，所述栅极与源极之间设置有SiN隔离层；所述栅极与漏极之间设置有SiN隔离层。
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CN113078050A (zh) * 2021-03-30 2021-07-06 芜湖启迪半导体有限公司 一种C面SiC外延结构及外延沟槽的填充方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113078050A (zh) * 2021-03-30 2021-07-06 芜湖启迪半导体有限公司 一种C面SiC外延结构及外延沟槽的填充方法
CN113078050B (zh) * 2021-03-30 2023-03-10 安徽长飞先进半导体有限公司 一种C面SiC外延结构及外延沟槽的填充方法

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