CN111599757B - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof Download PDF

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CN111599757B
CN111599757B CN202010494852.6A CN202010494852A CN111599757B CN 111599757 B CN111599757 B CN 111599757B CN 202010494852 A CN202010494852 A CN 202010494852A CN 111599757 B CN111599757 B CN 111599757B
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layer
doped material
material layer
channel
stacked
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CN111599757A (en
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王桂磊
亨利·H·阿达姆松
孔真真
李俊杰
刘金彪
李俊峰
殷华湘
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Institute of Microelectronics of CAS
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Priority to US17/004,173 priority patent/US11456218B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823412—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823418—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823487—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
    • H01L29/7843—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being an applied insulating layer

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Abstract

The embodiment of the application provides a semiconductor device and a manufacturing method thereof, wherein a dielectric layer can be formed on a substrate, a first stacking layer and a second stacking layer are formed in the dielectric layer, materials of the first stacking layer and the second stacking layer are not identical, the dielectric layer between the first stacking layer and the second stacking layer can be used as an isolation layer, the first stacking layer is formed in a first through hole longitudinally penetrating through the dielectric layer and comprises a first doping material layer, a first channel layer and a second doping material layer, the second stacking layer is formed in a second through hole longitudinally penetrating through the dielectric layer and comprises a third doping material layer, a second channel layer and a fourth doping material layer, and then a first device can be formed in the first stacking layer and a second device can be formed in the second stacking layer. The substrate can comprise a first device and a second device which are made of different materials, so that diversified device structures can be provided, and the requirements of users can be met.

Description

Semiconductor device and manufacturing method thereof
Technical Field
The present disclosure relates to semiconductor devices and methods of fabricating the same, and more particularly, to a semiconductor device and a method of fabricating the same.
Background
Along with the update and iteration of the semiconductor manufacturing process technology, the size of the semiconductor device is continuously reduced, the integration level is continuously improved, however, along with the miniaturization of the process node, the process node can reach a limit point, the size of the process node cannot be continuously reduced, and the performance is more and more difficult to improve. How to obtain small-sized high-performance devices is an important problem facing the field.
Disclosure of Invention
In view of the above, an object of the present application is to provide a semiconductor device and a method for manufacturing the same, which can achieve higher performance with a smaller device size.
In order to achieve the above purpose, the present application has the following technical scheme:
the embodiment of the application provides a manufacturing method of a semiconductor device, which comprises the following steps:
forming a dielectric layer on a substrate;
forming a first stacked layer and a second stacked layer in the dielectric layer, wherein the materials of the first stacked layer and the second stacked layer are not identical, and the dielectric layer between the first stacked layer and the second stacked layer is used as an isolation layer; the first stacking layer is formed in a first through hole longitudinally penetrating through the dielectric layer and comprises a first doping material layer, a first channel layer and a second doping material layer; the second stacking layer is formed in a second through hole longitudinally penetrating through the dielectric layer and comprises a third doped material layer, a second channel layer and a fourth doped material layer;
Forming a first device in the first stacked layer;
forming a second device in the second stacked layer;
the first device comprises a first doped material layer, a first channel layer, a second doped material layer, a first gate dielectric layer and a first gate layer in a first gap, wherein the first doped material layer, the first channel layer and the second doped material layer are arranged on the side wall of the isolation layer; the first channel layer is recessed from the first doped material layer and the second doped material layer on at least one side wall of the first stacked layer except the side wall contacted with the isolation layer, so that the first gap is formed between the first doped material layer and the second doped material layer;
the second device comprises a third doped material layer, a second channel layer, a fourth doped material layer, a second gate dielectric layer and a second gate layer in a second gap, which are arranged on the side wall of the isolation layer; the second channel layer is recessed from the third doped material layer and the fourth doped material layer on at least one side wall of the second stack layer except the side wall in contact with the isolation layer, so that the second gap is formed between the third doped material layer and the fourth doped material layer.
Alternatively to this, the method may comprise,
forming a first device in the first stacked layer, comprising:
Etching the dielectric layer to form a first groove so as to expose at least one side wall of the first stacked layer except the side wall contacted with the isolation layer; etching the first channel layer from the side direction through the first groove, and reserving the first channel layer on the side wall of the isolation layer to form a first gap between the first doped material layer and the second doped material layer; forming a first gate dielectric layer and a first gate layer in the first gap through the first trench; filling the first trench with a dielectric material;
forming a second device in the second stacked layer, comprising:
etching the dielectric layer to form a second groove so as to expose at least one side wall of the second stacked layer except the side wall contacted with the isolation layer; etching the second channel layer from the side direction through the second groove, and reserving the second channel layer on the side wall of the isolation layer to form a first gap between the first doped material layer and the second doped material layer; forming a second gate dielectric layer and a second gate layer in the second gap through the second trench; the second trench is filled with a dielectric material.
Alternatively to this, the method may comprise,
the etching the first channel layer from the lateral direction through the first trench includes:
performing a plurality of first oxidation removal processes, the first oxidation removal process comprising: performing an oxidation process of the first channel layer to form a first oxide layer on the surface of the first channel layer exposed in the first trench; removing the first oxide layer;
the etching the second channel layer from the lateral direction through the second trench includes:
performing a plurality of second oxidation removal processes, the second oxidation removal process comprising: performing an oxidation process of the second channel layer to form a second oxide layer on the surface of the second channel layer exposed in the second trench; and removing the second oxide layer.
Alternatively to this, the method may comprise,
the forming a first gate dielectric layer and a first gate layer in the first gap through the first trench includes:
depositing a first gate dielectric layer and a first gate electrode layer, and removing the first gate electrode layer and the first gate dielectric layer outside the first gap through the first groove;
forming a second gate dielectric layer and a second gate layer in the second gap through the second trench, including:
And depositing a second gate dielectric layer and a second gate electrode layer, and removing the second gate electrode layer and the second gate dielectric layer outside the second gap through the second groove.
Optionally, the first doped material layer, the first channel layer and the second doped material layer are sequentially silicon germanium, silicon germanium, or silicon, silicon germanium, silicon, or germanium, germanium tin, germanium; the third doped material layer, the second channel layer and the fourth doped material layer are sequentially silicon germanium, silicon and silicon germanium, or silicon, silicon germanium and silicon, or germanium, germanium tin and germanium.
Optionally, a buffer layer is formed between the substrate and the first doped material layer, and/or a buffer layer is formed between the substrate and the third doped material layer.
Optionally, an intrinsic layer of the first doped material layer is formed between the first doped material layer and the first channel layer, and an intrinsic layer of the second doped material layer is formed between the first channel layer and the second doped material layer; and/or an intrinsic layer of the third doped material layer is formed between the third doped material layer and the second channel layer, and an intrinsic layer of the fourth doped material layer is formed between the second channel layer and the fourth doped material layer.
Optionally, the method further comprises:
replacing the isolation layer with an insulation layer; the insulating layer comprises a first strained material layer and/or a second strained material layer, the first strained material layer is formed on the side wall of the first stacked layer and is used for providing compressive stress or tensile stress for the first channel layer, and the second strained material layer is formed on the side wall of the second stacked layer and is used for providing compressive stress or tensile stress for the second channel layer.
The embodiment of the application also provides a semiconductor device, which comprises:
a substrate;
a dielectric material on the substrate;
a first stack of layers in the dielectric material; the first stacking layer is formed in a first through hole longitudinally penetrating through the dielectric material and comprises a first doped material layer, a first channel layer and a second doped material layer;
a second stacked layer in the dielectric materials, the materials of the first stacked layer and the second stacked layer are not identical, and the dielectric layer between the first stacked layer and the second stacked layer is used as an isolation layer; the second stacked layer is formed in a second through hole longitudinally penetrating through the dielectric material and comprises a third doped material layer, a second channel layer and a fourth doped material layer;
A first device in the first stack layer, the first device comprising a first doped material layer, a first channel layer, and a second doped material layer, and a first gate dielectric layer and a first gate layer in a first gap; the first channel layer is recessed from the first doped material layer and the second doped material layer on at least one side wall of the first stacked layer except the side wall contacted with the isolation layer, so that the first gap is formed between the first doped material layer and the second doped material layer;
a second device in the second stack layer, the second device comprising a third doped material layer, a second channel layer, and a fourth doped material layer, and a second gate dielectric layer and a second gate layer in a second gap; the second channel layer is recessed from the third doped material layer and the fourth doped material layer on at least one side wall of the second stack layer except the side wall in contact with the isolation layer, so that the second gap is formed between the first doped material layer and the second doped material layer.
Optionally, the first doped material layer, the first channel layer and the second doped material layer are sequentially silicon germanium, silicon germanium, or silicon, silicon germanium, silicon, or germanium, germanium tin, germanium; the third doped material layer, the second channel layer and the fourth doped material layer are sequentially silicon germanium, silicon and silicon germanium, or silicon, silicon germanium and silicon, or germanium, germanium tin and germanium.
Optionally, a buffer layer is formed between the substrate and the first doped material layer, and/or a buffer layer is formed between the substrate and the third doped material layer.
Optionally, an intrinsic layer of the first doped material layer is formed between the first doped material layer and the first channel layer, and an intrinsic layer of the second doped material layer is formed between the first channel layer and the second doped material layer; and/or an intrinsic layer of the third doped material layer is formed between the third doped material layer and the second channel layer, and an intrinsic layer of the fourth doped material layer is formed between the second channel layer and the fourth doped material layer.
Optionally, an insulating layer is formed between the first stacked layer and the second stacked layer; the insulating layer comprises a first strained material layer and/or a second strained material layer, the first strained material layer is formed on the side wall of the first stacked layer and is used for providing compressive stress or tensile stress for the first channel layer, and the second strained material layer is formed on the side wall of the second stacked layer and is used for providing compressive stress or tensile stress for the second channel layer.
The embodiment of the application provides a semiconductor device and a manufacturing method thereof, wherein a dielectric layer can be formed on a substrate, a first stacking layer and a second stacking layer are formed in the dielectric layer, materials of the first stacking layer and the second stacking layer are not identical, the dielectric layer between the first stacking layer and the second stacking layer can be used as an isolation layer, the first stacking layer is formed in a first through hole longitudinally penetrating through the dielectric layer and comprises a first doping material layer, a first channel layer and a second doping material layer, the second stacking layer is formed in a second through hole longitudinally penetrating through the dielectric layer and comprises a third doping material layer, a second channel layer and a fourth doping material layer, and then a first device can be formed in the first stacking layer and a second device can be formed in the second stacking layer.
The first device comprises a first doped material layer, a first channel layer, a second doped material layer, a first gate dielectric layer and a first gate layer in a first gap, wherein the first doped material layer, the first channel layer and the second doped material layer are arranged on the side wall of the isolation layer; the first channel layer is recessed from the first doped material layer and the second doped material layer on at least one side wall of the first stacked layer except the side wall contacted with the isolation layer, so that the first gap is formed between the first doped material layer and the second doped material layer;
The second device comprises a third doped material layer, a second channel layer, a fourth doped material layer, a second gate dielectric layer and a second gate layer in a second gap, which are arranged on the side wall of the isolation layer; the second channel layer is recessed from the third doped material layer and the fourth doped material layer on at least one side wall of the second stack layer except the side wall in contact with the isolation layer, so that the second gap is formed between the first doped material layer and the second doped material layer.
In this way, in the first device, the first doped material layer and the second doped material layer are used as source and drain, a longitudinal first channel layer is arranged between the source and drain, in the second device, the third doped material layer and the fourth doped material layer are used as source and drain, a longitudinal second channel layer is arranged between the source and drain, the lengths of the first channel layer and the second channel layer are related to the thickness of the film layer, and high-precision etching is not needed, so that a small-size high-performance device can be obtained by using lower cost and simple process, and in addition, as the first stacked layer and the second stacked layer which are made of different materials can be included on the substrate, the first device and the second device which are made of different materials can be included, so that diversified device structures can be provided, and the requirements of users can be met.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic flow chart of a method for manufacturing a semiconductor device according to an embodiment of the present application;
fig. 2 to 27 are schematic views showing structures during formation of a semiconductor device according to a manufacturing method according to an embodiment of the present application;
fig. 28 and 29 show a schematic diagram of stacked layer distribution provided in an embodiment of the present application.
Detailed Description
In order to make the above objects, features and advantages of the present application more comprehensible, embodiments accompanied with figures are described in detail below.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application, but the present application may be practiced in other ways other than those described herein, and persons skilled in the art will readily appreciate that the present application is not limited to the specific embodiments disclosed below.
Next, the present application will be described in detail with reference to the schematic drawings, wherein the cross-sectional views of the device structure are not to scale for the sake of illustration, and the schematic drawings are merely examples, which should not limit the scope of protection of the present application. In addition, the three-dimensional dimensions of length, width and depth should be included in actual fabrication.
As described in the background art, with the update and iteration of the semiconductor manufacturing process technology, the size of the semiconductor device is continuously reduced, and the integration level is continuously improved, however, with the miniaturization of the process node, the size of the semiconductor device is limited by the process and cannot be continuously reduced, so that the performance improvement of the device is more and more difficult. How to obtain small-sized high-performance devices is an important problem facing the field.
For example, a memory layer and a gate layer may be formed on a substrate, and a source and a drain are doped in the substrate at two sides of the gate layer, so that a channel layer between the source and the drain is limited by the size of the gate layer, and the size of the gate layer is limited by a photolithography process, thereby limiting the overall size of the device.
In view of the foregoing technical problems, embodiments of the present application provide a semiconductor device and a method for manufacturing the same, in which a dielectric layer may be formed on a substrate, a first stacked layer and a second stacked layer may be formed in the dielectric layer, materials of the first stacked layer and the second stacked layer are not identical, the dielectric layer between the first stacked layer and the second stacked layer may be used as an isolation layer, the first stacked layer may be formed in a first through hole longitudinally penetrating the dielectric layer, including a first doped material layer, a first channel layer and a second doped material layer, the second stacked layer may be formed in a second through hole longitudinally penetrating the dielectric layer, including a third doped material layer, a second channel layer and a fourth doped material layer, and then a first device may be formed in the first stacked layer, and a second device may be formed in the second stacked layer.
The first device comprises a first doped material layer, a first channel layer, a second doped material layer, a first gate dielectric layer and a first gate layer in a first gap, wherein the first doped material layer, the first channel layer and the second doped material layer are arranged on the side wall of the isolation layer; the first channel layer is recessed from the first doped material layer and the second doped material layer on at least one side wall of the first stacked layer except the side wall contacted with the isolation layer, so that the first gap is formed between the first doped material layer and the second doped material layer;
the second device comprises a third doped material layer, a second channel layer, a fourth doped material layer, a second gate dielectric layer and a second gate layer in a second gap, which are arranged on the side wall of the isolation layer; the second channel layer is recessed from the third doped material layer and the fourth doped material layer on at least one side wall of the second stack layer except the side wall in contact with the isolation layer, so that the second gap is formed between the first doped material layer and the second doped material layer.
In this way, in the first device, the first doped material layer and the second doped material layer are used as source and drain, a longitudinal first channel layer is arranged between the source and drain, in the second device, the third doped material layer and the fourth doped material layer are used as source and drain, a longitudinal second channel layer is arranged between the source and drain, the lengths of the first channel layer and the second channel layer are related to the thickness of the film layer, and high-precision etching is not needed, so that a small-size high-performance device can be obtained by using lower cost and simple process, and in addition, as the first stacked layer and the second stacked layer which are made of different materials can be included on the substrate, the first device and the second device which are made of different materials can be included, so that diversified device structures can be provided, and the requirements of users can be met.
For a better understanding of the technical solutions and technical effects of the present application, specific embodiments will be described in detail below with reference to the accompanying drawings.
Referring to fig. 1, a flowchart of a method for manufacturing a semiconductor device according to an embodiment of the present application is shown, where the method may include the following steps:
s101, a dielectric layer 200 is formed on the substrate 100, as shown with reference to fig. 2 and 3.
In the embodiment of the present application, the substrate 100 may be a Si substrate, a Ge substrate, a SiGe substrate, an SOI (silicon on insulator ) or GOI (germanium on insulator, germanium On Insulator), a group iii-v compound, a group ii-iv compound semiconductor, or the like. In other embodiments, the substrate 100 may also be a substrate including other elemental or compound semiconductors, such as GaAs, inP, siC, or the like, a stacked structure, such as Si/SiGe, or the like, and other epitaxial structures, such as SGOI (silicon germanium on insulator), or the like. In this embodiment, the substrate 100 is a bulk silicon substrate.
Dielectric layer 200 may be an insulating material formed on substrate 100 for subsequent isolation of different devices and protection of the devices during the fabrication process. Thus, the thickness of the dielectric layer 200 is related to the thickness of the subsequently formed device, and the thicker the device, the thicker the thickness of the dielectric layer 200. Referring to fig. 2 and 3, fig. 2 is a schematic diagram of a semiconductor device in a manufacturing process according to an embodiment of the present application, and fig. 3 is a schematic structural diagram of the semiconductor device shown in fig. 2 in a horizontal plane in which a dotted line is located.
The dielectric layer 200 may be silicon oxide or silicon nitride, etc. The method of forming the dielectric layer 200 on the substrate 100 may be by a deposition process, which may include, for example, chemical vapor deposition (Chemical Vapor Deposition, CVD), molecular beam epitaxy (Molecular Beam Epitaxy, MBE), atomic layer deposition (Atomic Layer Deposition, ALD), and the like.
S102, forming a first stacked layer and a second stacked layer in the dielectric layer 200, wherein the materials of the first stacked layer and the second stacked layer are not completely the same, and referring to FIGS. 4-11.
After forming the dielectric layer 200, the first and second stacked layers may be formed in the dielectric, and the materials of the first and second stacked layers are not exactly the same, and thus cannot generally be formed simultaneously.
Specifically, the dielectric layer 200 may be etched to form a first through hole 201 longitudinally penetrating through the dielectric layer 200, as shown in fig. 4 and fig. 5, where fig. 4 is a schematic diagram of a semiconductor device in a manufacturing process provided in an embodiment of the present application, and fig. 5 is a schematic structural diagram of the semiconductor device shown in fig. 4 in a horizontal plane in which a dotted line is located; thereafter, a first stacked layer may be formed in the first through hole 201, as shown in fig. 6 and 7, where fig. 6 is a schematic view of a semiconductor device in a manufacturing process provided in an embodiment of the present application, and fig. 7 is a schematic view of a structure of the semiconductor device shown in fig. 6 in a horizontal plane in which a dotted line is located; then, etching the dielectric layer 200 to form a second through hole 202 longitudinally penetrating through the dielectric layer 200, as shown in fig. 8 and fig. 9, wherein fig. 8 is a schematic diagram of a semiconductor device in a manufacturing process provided in an embodiment of the present application, and fig. 9 is a schematic structural diagram of the semiconductor device shown in fig. 8 in a horizontal plane in which a dashed line is located; thereafter, a second stacked layer is formed in the second via 202, and is shown with reference to fig. 10 and 11, where fig. 10 is a schematic view of a semiconductor device in a manufacturing process according to an embodiment of the present application, and fig. 11 is a schematic view of a structure of the semiconductor device shown in fig. 10 in a horizontal plane in which a dotted line is located. Wherein the first through hole 201 and the second through hole 202 are not connected and do not overlap, the first stacked layer and the second stacked layer are independent from each other, and the intermediate dielectric layer 200 serves as a separation layer of the two.
The etching of the dielectric layer 200 to form the first through hole 201 and the second through hole 202 may be implemented by a photolithography technique, specifically, photoresist may be formed on the dielectric layer 200, the patterned photoresist may be obtained by photolithography and development, the etching of the dielectric layer 200 may be performed with the photoresist as a mask to obtain the first through hole 201 or the second through hole 202, and then the photoresist layer may be removed. Specifically, a hard mask layer and a photoresist layer may be formed on the dielectric layer 200, a patterned photoresist is obtained by photolithography and development, etching of the hard mask is performed by using the photoresist as a mask to obtain a patterned hard mask layer, then etching of the dielectric layer 200 may be performed by using the patterned hard mask layer as a mask to obtain the first via 201 or the second via 202, and then the photoresist layer and the hard mask layer may be removed.
The etched first through hole 201 and second through hole 202 may longitudinally penetrate through the dielectric layer 200, specifically, may penetrate through to the substrate 100, or may over etch a portion of the substrate 100, where a dimension of the first through hole 201 in a plane parallel to a surface of the substrate 100 is related to an area of the first device, a dimension of the second through hole 202 in a plane parallel to a surface of the substrate 100 is related to an area of the second device, and dimensions of the first through hole 201 and the second through hole 202 may be set according to practical situations.
The first through holes 201 may include a plurality of first through holes 201, and each of the first through holes 201 may have a first stacked layer formed therein, and the first stacked layers may have a uniform structure and material, so that the fabrication thereof may be performed together, as shown with reference to fig. 5, in which two first through holes 201 are included. Similarly, the second through holes 202 may also include a plurality of second through holes 202, and each of the second through holes 202 may have a second stacked layer formed therein, and the second stacked layers may have a uniform structure and material, so that the fabrication thereof may be performed together, as shown with reference to fig. 9, in which two second through holes 202 are included.
Specifically, the first stacked layer is a base material layer of the first device, and may include a first doped material layer 101, a first channel layer 102, and a second doped material layer 103, where the first doped material layer 101 and the second doped material layer 103 may be used as a source and a drain, that is, one is a source and the other is a drain, as shown in fig. 6. The materials of the first doped material layer 101, the first channel layer 102, and the second doped material layer 103 may be determined according to actual situations.
In a specific implementation, when the substrate 100 is a silicon substrate, the materials of the first doped material layer 101, the first channel layer 102 and the second doped material layer 103 may be silicon germanium, silicon, or silicon germanium, that is, silicon germanium is used as a source drain, and silicon is used as a channel, so that the first doped material layer 101 and the silicon substrate have similar lattice constants, which is beneficial to forming the first doped material layer 101 with better quality.
In a specific implementation, when the substrate 100 is a silicon substrate, the materials of the first doped material layer 101, the first channel layer 102 and the second doped material layer 103 may be silicon, silicon germanium, i.e. silicon is used as a source drain, and silicon germanium is used as a channel, and at this time, the first doped material layer 101 and the silicon substrate have the same material, which is beneficial to forming the first doped material layer 101 with better quality. Wherein the electron mobility of silicon is about 1600cm 2 V -1 s -1 Hole mobility is about 430cm 2 V -1 s -1 The electron mobility of germanium is about 3900cm 2 V -1 s -1 Hole mobility was about 1900cm 2 V -1 s -1 I.e., silicon germanium has better carrier mobility than silicon, and thus the resulting device may have better performance.
In a specific implementation, when the substrate 100 is a silicon substrate, the materials of the first doped material layer 101, the first channel layer 102 and the second doped material layer 103 may be germanium, germanium tin, or germanium, that is, germanium is used as a source drain, and germanium tin is used as a channel, where the first doped material layer 101 and the silicon substrate have a certain lattice difference, so a buffer layer may be formed between the first doped material layer 101 and the silicon substrate, and the buffer layer may be a germanium layer formed at a low temperature, or a stack of a germanium layer formed at a low temperature and a germanium layer formed at a high temperature, which is used for balancing lattice constants between the first doped material layer 101 and the silicon substrate, so as to form the first doped material layer 101 with better quality. Since germanium has higher carrier mobility than silicon and tin also has higher carrier mobility, the resulting device has better performance.
Of course, in the embodiment of the present application, the first doped material layer 101, the first channel layer 102 and the second doped material layer 103 may also be other materials, for example, gaAs, inAs, inAb or a group iii-v element, which have higher carrier mobility, so as to be beneficial to improving the device performance, and a person skilled in the art may select a suitable material for the first doped material layer 101, the first channel layer 102 and the second doped material layer 103 according to practical situations.
The thickness of the first doped material layer 101, the first channel layer 102 and the second doped material layer 103 may range from 10 nm to 30nm, where the first doped material layer 101 and the second doped material layer 103 are doped materials, and the doping types of the first doped material layer 101 and the second doped material layer 103 may be the same, and the doping manner may be in-situ doping or other doping manners. A diffusion barrier layer may be formed between the first doped material layer 101 and the first channel layer 102, the diffusion barrier layer may be an intrinsic layer of the first doped material layer 101, thereby blocking the diffusion of the doping element in the first doped material layer 101 into the first channel layer 102, and similarly, a diffusion barrier layer may be formed between the first channel layer 102 and the second doped material layer 103, and the diffusion barrier layer may be an intrinsic layer of the second doped material layer 103, thereby blocking the diffusion of the doping element in the second doped material layer 103 into the first channel layer 102.
As an example, the first stacked layer may include a doped silicon layer, an intrinsic silicon layer, a silicon germanium layer, an intrinsic silicon layer, a doped silicon layer, wherein the intrinsic silicon layer acts as a diffusion barrier layer; or the first stacked layer may comprise a doped silicon germanium layer, an intrinsic silicon germanium layer, a silicon layer, an intrinsic silicon germanium layer, a doped silicon germanium layer, wherein the intrinsic silicon germanium layer acts as a diffusion barrier; or the first stacked layer may include a doped germanium layer, an intrinsic germanium layer, a germanium tin layer, an intrinsic germanium layer, a doped germanium layer.
The first doped material layer 101, the first channel layer 102, and the second doped material layer 103 may be formed by epitaxial growth, for example, CVD, PVD, ALD, or the like.
Specifically, in the process of epitaxially growing silicon, a silicon epitaxial layer can be generated by using a precursor containing silicon under the conditions that the temperature is 500-700 ℃ and the cavity pressure is 10-20Torr, and the time for epitaxially growing silicon can be in the range of 20s-240 s. Wherein the silicon-containing precursor may be Si 2 H 2 Cl 2 The flow rate can be 20-500sccm; the silicon-containing precursor may also be SiH 4 The flow rate can be 20-300sccm; the silicon-containing precursor may also be Si 2 H 6 And H 2 The flow rate of the mixed gas of (2) can be 20-300sccm. When epitaxially grown silicon is used as source and drain, the doped silicon can be grown in situ by doping, specifically, doping gas can be used to provide doping element and is input into the cavity together with the precursor containing silicon, the doping gas can be PH 3 And H 2 Or AsH 3 And H 2 Is a mixed gas of (a) and (b).
Specifically, in the process of epitaxially growing silicon germanium, the epitaxial layer can be generated by using a precursor containing silicon and a precursor containing germanium under the conditions that the temperature is 500-700 ℃ and the cavity pressure is 10-20Torr, and the time for epitaxially growing the silicon germanium can be in the range of 20s-240 s. Wherein the silicon-containing precursor may be Si 2 H 2 Cl 2 The flow rate can be 20-500sccm; the silicon-containing precursor may also be SiH 4 The flow rate can be 20-300sccm; the silicon-containing precursor may also be Si 2 H 6 And H 2 The flow rate of the mixed gas of (2) can be 20-300sccm; the germanium-containing precursor may be GeH 4 And H 2 Or Ge) 2 H 6 And H 2 The flow rate of the mixed gas of (2) can be 20-300sccm. When epitaxially grown silicon germanium is used as the source and drain, the doped silicon can be grown by in-situ doping, and in particular, the doping gas can be used to provide the doping elementIs co-fed into the chamber with a silicon-containing precursor and a germanium-containing precursor, the dopant gas may be pH 3 And H 2 Or AsH 3 And H 2 Is a mixed gas of (a) and (b).
Specifically, in the process of epitaxially growing germanium, the epitaxial layer can be generated by utilizing a precursor containing germanium under the conditions that the temperature is 350-700 ℃ and the cavity pressure is 10-20Torr, and the time for epitaxially growing germanium can be in the range of 20s-240 s. Wherein the germanium-containing precursor may be GeH 4 And H 2 Or Ge) 2 H 6 And H 2 The flow rate of the mixed gas of (2) can be 20-1000sccm. When epitaxially grown germanium is used as the source and drain, the doped silicon can be grown in situ by doping, specifically, doping gas can be used to provide doping element and is input into the cavity together with germanium-containing precursor, the doping gas can be PH 3 And H 2 Or AsH 3 And H 2 Is a mixed gas of (a) and (b).
Specifically, in the process of epitaxially growing germanium tin, the epitaxial layer can be generated by utilizing a tin-containing precursor and a germanium-containing precursor under the conditions that the temperature is 250-400 ℃ and the cavity pressure is 10-20Torr, and the time for epitaxially growing germanium tin can be in the range of 20s-240 s. Wherein the tin-containing precursor may be SnCl 4 (H 2 Carried) with a flow rate of 20-500sccm; the germanium-containing precursor may be GeH 4 And H 2 Or Ge) 2 H 6 And H 2 The flow rate of the mixed gas of (2) can be 20-1000sccm. When epitaxially grown germanium-tin is used as source and drain, doped silicon can be grown in situ, specifically, doping gas can be used to provide doping element, and the doping element, tin-containing precursor and germanium-containing precursor can be input into the cavity together, and the doping gas can be PH 3 And H 2 Or AsH 3 And H 2 Is a mixed gas of (a) and (b).
In particular, the composition of germanium in the SiGe layer may be determined according to the actual situation, and the carrier mobility in the SiGe layer and the lattice constant between the SiGe layer and silicon are combined, the composition of germanium in the SiGe layerThe score may be less than or equal to 30%; the composition of tin in the germanium tin can be determined according to practical conditions, and the composition of tin in the tin germanium layer can be 0.5% -20% by integrating the carrier mobility in the tin germanium layer and the lattice constant between the tin germanium layer and the germanium layer; the ion doping concentration in the source and drain is 1E19-3E20 cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The thicknesses of the first doped material layer 101, the second doped material layer 103 and the first channel layer 102 in the device may be determined according to practical situations, and as an example, the thicknesses may be 10-30nm; a diffusion barrier layer may be formed between the source and the channel, and between the first channel layer 102 and the drain, and may have a thickness of 1-5nm, and the diffusion barrier layer is typically an intrinsic layer formed by stopping the input of the doping gas after the formation of the first doping material layer 101, or an intrinsic layer formed by not having the input of the doping gas before the formation of the second doping material layer 103.
After forming the first stacked layer, a planarization process may be used to level the first stacked layer with the dielectric layer 200, which may facilitate subsequent processing, as shown with reference to fig. 6.
It should be noted that, a plurality of first stacked layers stacked in a vertical direction may be included on the substrate 100, and each of the first stacked layers may include the first doped material layer 101, the first channel layer 102, and the second doped material layer 103, so that the integration level of the device may be improved, and the plurality of first stacked layers may be separated by an insulating material.
Similar to the first stacked layer, the second stacked layer is a base material layer of the second device, and may include a third doped material layer 111, a second channel layer 112, and a fourth doped material layer 113, wherein the third doped material layer 111 and the fourth doped material layer 113 may serve as a source drain, i.e., one is a source and the other is a drain. The materials of the third doped material layer 111, the second channel layer 112, and the fourth doped material layer 113 may be determined according to practical situations.
The material of the first stacked layer and the material of the second stacked layer may not be identical, for example, the material of the first doped material layer 101 is different from the material of the third doped material layer 111, and/or the material of the first channel layer 102 is different from the material of the second channel layer 112, and/or the material of the second doped material layer 103 and the material of the fourth doped material layer 113 are different. As an example, the first doping material layer 101, the first channel layer 102, and the second doping material layer 103 may be sequentially silicon, silicon germanium, and silicon, and the third doping material layer 111, the second channel layer 112, and the fourth doping material layer 113 may be sequentially silicon germanium, silicon germanium.
Thus, the first stacked layer and the second stacked layer may not be formed at the same time, that is, the etching of the first via 201 and the formation of the first stacked layer may be performed first, and then the etching of the second via 202 and the formation of the second stacked layer may be performed. In fact, in the embodiment of the present application, it is essential that the manufacturing of different devices is performed in batches in the dielectric layer 200, and the structures and materials of the devices in the same batch are the same, so that multiple types of devices can be formed on the substrate 100.
In a specific implementation, when the substrate 100 is a silicon substrate, the third doped material layer 111, the second channel layer 112, and the fourth doped material layer 113 may be sequentially silicon germanium, silicon, and silicon germanium, that is, silicon germanium is used as a source drain, and silicon is used as a channel; when the substrate 100 is a silicon substrate, the materials of the third doped material layer 111, the second channel layer 112, and the fourth doped material layer 113 may be silicon, silicon germanium, or silicon, i.e., silicon is used as a source/drain, and silicon germanium is used as a channel; when the substrate 100 is a silicon substrate, the materials of the third doped material layer 111, the second channel layer 112 and the fourth doped material layer 113 may be germanium, germanium tin, and germanium, that is, germanium is used as a source drain, and germanium tin is used as a channel, where the third doped material layer 111 and the silicon substrate have a certain lattice difference, so a buffer layer may be formed between the third doped material layer 111 and the silicon substrate, and the buffer layer may be a germanium layer formed at a low temperature, or a stack of a germanium layer formed at a low temperature and a germanium layer formed at a high temperature, and is used for balancing lattice constants between the third doped material layer 111 and the silicon substrate, so as to form the third doped material layer 111 with better quality; of course, the third doped material layer 111, the second channel layer 112, and the fourth doped material layer 113 in the embodiments of the present application may be other materials.
The thickness ranges, doping concentration ranges, and forming methods of the third doped material layer 111, the second channel layer 112, and the fourth doped material layer 113 may be referred to in the description of the first doped material layer 101, the first channel layer 102, and the second doped material layer 103, and it should be noted that the first stacked layer and the second stacked layer have non-uniform materials.
It should be noted that, a plurality of vertically stacked second stacked layers may be included on the substrate 100, and each of the second stacked layers may include the third doped material layer 111, the second channel layer 112, and the fourth doped material layer 113, so that the integration level of the device may be improved, and the plurality of second stacked layers may be separated by an insulating material.
S103, forming a first device in the first stacked layer, referring to fig. 12-19.
In this embodiment, the dielectric layer 200 between the first stacked layer and the second stacked layer may be used as an isolation layer of the first stacked layer and the second stacked layer, and then the first device may include the first doped material layer 101, the first channel layer 102, the second doped material layer 103, and the first gate dielectric layer 106 and the first gate layer 107 in the first gap 1021 on the sidewalls of the isolation layer; the first channel layer 102 is recessed from the first doped material layer 101 and the second doped material layer 103 on at least one side wall of the first stacked layer except for the side wall in contact with the isolation layer, so that a first gap 1021 is formed between the first doped material layer 101 and the second doped material layer 103.
Specifically, during the process of forming the first device, the dielectric layer 200 may be etched to obtain the first trench 203, so as to expose at least one side wall of the first stacked layer except for the side wall in contact with the isolation layer, where the remaining dielectric layer 200 covers the side wall of the second stacked layer.
As a possible implementation manner, the first trench 203 may expose multiple side walls of the first stacked layer, referring to fig. 12 and 13, fig. 12 is a schematic view of a semiconductor device provided in the manufacturing process according to an embodiment of the present application, fig. 13 is a schematic structural view of the semiconductor device shown in fig. 12 in a horizontal plane where a dotted line is located, the first trench 203 exposes three side walls of the first stacked layer, and an isolation layer between the first stacked layer and the second stacked layer covers one side wall of the first stacked layer and one side wall of the second stacked layer that are in contact with the first stacked layer and the second stacked layer at the same time. Of course, the first trench 203 may also expose one side wall of the first stacked layer, for example, only the side wall opposite to the side wall in contact with the isolation layer, or the adjacent side wall.
Specifically, the dielectric layer 200 may be etched with the patterned mask layer 120 as a mask, the mask layer 120 may be a photoresist layer or a hard mask layer, for example, silicon oxide, silicon nitride, or the like, and then the mask layer 120 may be removed, or when the mask layer 120 is a hard mask layer, the mask layer 120 may not be removed, so that the stacked layer may be protected by the mask layer 120.
Thereafter, the first channel layer may be etched from the lateral direction through the first trench 203 to remove a portion of the first channel layer 102, so as to form a first gap 1021 between the first doped material layer 101 and the second doped material layer 103, where the first channel layer 102 remains on the sidewall of the first insulating layer 105, and the remaining first channel layer 102 connects the first doped material layer 101 and the second doped material layer 103, that is, the channel length between the source and the drain is consistent with the thickness of the first channel layer 102, as shown in fig. 14 and 15, fig. 14 is a schematic diagram of a semiconductor device in a manufacturing process provided in the embodiment of the present application, and fig. 15 is a schematic diagram of a structure in a horizontal plane where a dotted line in the semiconductor device shown in fig. 14 is located.
Wherein, since the first channel layer 102 is etched from the first trench 203, the remaining first channel layer 102 tends to be a portion farther from the first trench 203, and as shown with reference to fig. 15, the remaining first channel layer 102 is located at a laterally more central position on the isolation layer sidewall.
The first channel layer 102 is etched laterally through the first trench 203, and may be etched by wet etching, for example, a portion of the first channel layer 102 may be etched by acid etching, or may be etched by gas molecular reaction, or may be etched by multiple first oxidation removal processes. Specifically, the first oxidation removal process may be performed by first performing an oxidation process of the first channel layer 102 to form a first oxide layer on the surface of the first channel layer 102 exposed in the first trench 203, and then removing the first oxide layer on the surface of the first channel layer 102.
The oxidation process of the first channel layer 102 may specifically be to oxidize the first channel layer 102 by plasma or chemical self-limiting, and in this process, the first channel layer 102 may be oxidized more than the first doped material layer 101 and the second doped material layer 103. Wherein the oxidant may be oxygen O 2 Ozone O may be used 3 . After the first oxide layer is formed on the first channel layer 102, the generated first oxide may be precisely etched using an etching gas. Specifically, dry etching may be used to remove the first oxide layer.
In the oxidation removal process, the first channel layer 102 is oxidized within a certain thickness, the generated oxide of the first channel layer 102 can be etched, the oxide can be oxidized and removed for multiple times, rapid and precise etching can be realized, and generally, the etching precision can be accurate to the quasi-atomic level. More preferably, the thickness of the oxidized layer after each oxidation can be controlled to be 1-10A by controlling the technological parameters in the oxidation process, and the etching precision can be accurate to the quasi-atomic level by repeating the steps of oxidation and etching through etching with high selectivity.
For example, when the first doped material layer 101, the first channel layer 102 and the second doped material layer 103 are silicon, silicon germanium and silicon respectively, oxidation of silicon germanium may be performed first, then oxide of silicon germanium may be etched and removed, and lateral removal of silicon germanium layer may be achieved through multiple oxidation and etching processes; when the first doped material layer 101, the first channel layer 102 and the second doped material layer 103 are silicon germanium, silicon and silicon germanium respectively, oxidation of silicon can be performed first, then silicon oxide obtained by oxidation can be etched and removed, and lateral removal of the silicon layer can be realized through multiple oxidation and etching processes.
When the first channel layer 102 is laterally etched by using the oxidation removal process, the strain of the first channel layer 102 may be changed to a certain extent, so as to further improve the carrier mobility of the first channel layer 102. For example, along with the etching of the silicon layer, the tensile stress of the silicon layer also becomes larger, and the electron mobility of the NMOS tube is further improved; along with the etching of the silicon germanium layer, the silicon germanium layer is subjected to compressive stress, so that the hole mobility of the PMOS tube is further improved.
Thereafter, a first gate dielectric layer 106 and a first gate layer 107 may be formed in the first gap 1021, as shown in fig. 16 and 17, where fig. 16 is a schematic view of a semiconductor device in a manufacturing process according to an embodiment of the present application, and fig. 17 is a schematic view of a structure of the semiconductor device shown in fig. 16 in a horizontal plane in which a dashed line is located.
Specifically, the first gate dielectric layer 106 may be a high-K material, such as HfO 2 、HfSiO、HfSiON、HfTaO、HfTiO，La 2 O 3 The first gate dielectric layer 106 may be formed by ALD, CVD, or the like, for example, so that the first gate dielectric layer 106 may be formed to cover the sidewalls of the first gap 1021, the surface of the first channel layer 102 in the first gap 1021, the sidewalls of the first stack layer outside the first gap 1021, the upper surface of the first stack layer, and the bottom of the first trench 203.
The first gate layer 107 may be made of metal material, other conductor material, or a combination of metal material and other conductor material, such as Ti, tiAl x 、TiN、TaN x 、HfN、TiC x 、TaC x W, co, etc. or a laminate thereof. The first gate layer 107 may be formed by ALD, CVD, or the like, so that the first gate layer 107 may be formed to cover the first gate dielectric layer 106.
After depositing the first gate dielectric layer 106 and the first gate layer 107, the first gate layer 107 and the first gate dielectric layer 106 may be removed at other positions than the first gap 1021 to obtain the first gate dielectric layer 106 and the first gate layer 107 in the first gap 1021. Specifically, the first gate dielectric layer 106 and the first gate layer 107 on the upper surface of the first stacked layer and the bottom of the first trench 203 may be removed by anisotropic etching, and then the first gate dielectric layer 106 and the first gate layer 107 on the sidewall of the first stacked layer may be removed by isotropic etching.
Thereafter, the first trench 203 may be filled with a dielectric material 300, as shown in fig. 18 and 19, where fig. 18 is a schematic view of a semiconductor device provided in an embodiment of the present application during a manufacturing process, and fig. 19 is a schematic view of a structure of the semiconductor device shown in fig. 18 in a horizontal plane in which a dotted line is located. The filled dielectric material 300 may be either flush with the remaining mask layer 120 or with the first stack layer.
S104, forming a second device in the second stacked layer, refer to fig. 20-27.
In the embodiment of the application, the second device may include a third doped material layer 111, a second channel layer 112 and a fourth doped material layer 113 on the sidewall of the isolation layer, and a second gate dielectric layer and a second gate layer in the second gap 1121, where the second channel layer 112 is recessed from the third doped material layer 111 and the fourth doped material layer 113 on at least one sidewall of the second stacked layer except the sidewall in contact with the isolation layer, such that the second gap 1121 is formed between the third doped material layer 111 and the fourth doped material layer 113.
The process of forming the second device is similar to the process of forming the first device, and will be briefly described herein, although reference will be made to the process of forming the first device.
In the process of forming the second device, the dielectric layer 200 may be etched first to form the second trench 204 so as to expose at least one side wall of the second stacked layer except for the side wall in contact with the isolation layer, where the remaining dielectric layer 200 and the dielectric material 300 filling the first trench 203 may cover the side wall of the first stacked layer.
As a possible implementation manner, the second trench 204 may expose multiple side walls of the second stacked layer, as shown in fig. 20 and 21, fig. 20 is a schematic view of a semiconductor device provided in an embodiment of the present application during a manufacturing process, fig. 21 is a schematic view of a structure in a horizontal plane of a dashed line in the semiconductor device shown in fig. 20, the second trench 204 exposes three side walls of the second stacked layer, and an isolation layer between the first stacked layer and the second stacked layer covers one side wall of the first stacked layer and one side wall of the second stacked layer that are in contact with the second stacked layer. Of course, the second trench 204 may also expose one side wall of the second stacked layer, for example, only the side wall opposite to the side wall in contact with the isolation layer, or the adjacent side wall. Specifically, the dielectric layer 200 may be etched with the patterned mask layer 220 as a mask, and the mask layer 200 may refer to the mask layer 120.
Thereafter, the second channel layer 112 may be etched from the lateral direction through the second trench 204 to remove a portion of the second channel layer 112, so as to form a second gap 1121 between the third doped material layer 111 and the fourth doped material layer 113, where the second channel layer 112 remains on the sidewall of the second insulating layer 115, and the remaining second channel layer 112 connects the third doped material layer 111 and the fourth doped material layer 113, that is, the channel length between the source and the drain is consistent with the thickness of the second channel layer 112, as shown in fig. 22 and 23, fig. 22 is a schematic diagram of a semiconductor device in a manufacturing process according to an embodiment of the present application, and fig. 23 is a schematic structural diagram in a horizontal plane where a dotted line in the semiconductor device shown in fig. 22 is located.
Wherein, since the second channel layer 112 is etched from the second trench 204, the remaining second channel layer 112 tends to be a portion farther from the second trench 204, and the remaining second channel layer 102 is located at a laterally more central position on the isolation layer sidewall as shown with reference to fig. 23.
The second channel layer 112 is etched laterally through the second trench 204, and may be etched by wet etching, for example, a portion of the second channel layer 112 may be etched by acid etching, or may be etched by gas molecular reaction, or may be etched by multiple second oxidation removal processes. Specifically, the second oxidation removal process may be performed first to form a second oxide layer on the surface of the second channel layer 112 exposed in the second trench 204, and then remove the second oxide layer on the surface of the second channel layer 112.
After the second channel layer 112 is laterally etched, a second gate dielectric layer 116 and a second gate layer 117 may be formed in the second gap 1121, as shown in fig. 24 and 25, where fig. 24 is a schematic diagram of a semiconductor device in a manufacturing process according to an embodiment of the present application, and fig. 25 is a schematic structural diagram of the semiconductor device shown in fig. 24 in a horizontal plane in which a dotted line is located.
Specifically, the second gate dielectric layer 116 may be a high-K material, such as HfO 2 、HfSiO、HfSiON、HfTaO、HfTiO，La 2 O 3 The second gate dielectric layer 116 may be formed by ALD, CVD, or the like, for example, by HrZrO, so that the second gate dielectric layer 116 may be formed to cover the sidewalls of the second gap 1121, the surface of the second channel layer 112 in the second gap 1121, the sidewalls of the second stack layer outside the second gap 1121, the upper surface of the second stack layer, and the bottom of the second trench 204.
The second gate layer 117 may be made of metal material, other conductor material, or a combination of metal material and other conductor material, such as Ti, tiAl x 、TiN、TaN x 、HfN、TiC x 、TaC x W, co, etc. or a laminate thereof. The second gate layer 117 may be formed by ALD, CVD, or the like, so that the second gate layer 117 covering the second gate dielectric layer 116 may be formed.
After depositing the second gate dielectric layer 116 and the second gate layer 117, the second gate layer 117 and the second gate dielectric layer 116 may be removed at other locations than the second gap 1121 to obtain the second gate dielectric layer 116 and the second gate layer 117 in the second gap 1121. Specifically, the second gate dielectric layer 116 and the second gate layer 117 on the upper surface of the second stacked layer and at the bottom of the second trench 205 may be removed by anisotropic etching, and then the second gate dielectric layer 116 and the second gate layer 117 on the sidewall of the second stacked layer may be removed by isotropic etching.
Thereafter, the second trench 204 may be filled with a dielectric material 400, as shown in fig. 26 and 27, where fig. 26 is a schematic diagram of a semiconductor device provided in an embodiment of the present application during a manufacturing process, and fig. 27 is a schematic diagram of a structure of the semiconductor device shown in fig. 26 in a horizontal plane in which a dotted line is located. The filled dielectric material 400 may be either flush with the remaining mask layer 220 or flush with the second stack layer. The extraction of the connection lines (not shown) may then take place.
In this embodiment, the isolation layer is the dielectric layer 200 between the first stacked layer and the second stacked layer, which can isolate the first channel layer 102 from the second channel layer 112, and isolate the first gate dielectric layer 106 from the second gate dielectric layer 116, and isolate the first gate layer 107 from the second gate layer 117.
In some embodiments, the isolation layer may also be replaced with an insulating layer, which may include a first layer of strained material and/or a second layer of strained material. Wherein the first strained material layer is formed on the sidewall of the first stacked layer, so as to provide compressive stress or tensile stress to the first channel layer 102 in contact with the first strained material layer, so as to improve carrier mobility of the first channel layer 102; the second strained material layer may be formed on a sidewall of the second stacked layer to provide compressive or tensile stress to the second channel layer 112 in contact with the second strained material layer to improve carrier mobility of the second channel layer 112.
In particular, when the first strained material layer provides compressive stress to the first channel layer 102, hole mobility of the first channel layer 102 may be improved, so that the first strained material layer capable of providing compressive stress to the first channel layer 102 may be selected in a PMOS device, and in particular, a first strained material layer having a lattice constant greater than that of the first channel layer material may be selected, for example, when the first channel layer 102 is silicon germanium, the first strained material layer may be monocrystalline silicon.
Specifically, when the first strained material layer provides tensile stress to the first channel layer 102, the electron mobility of the first channel layer 102 may be improved, so that the first strained material layer capable of providing tensile stress to the first channel layer 102 may be selected in an NMOS device, specifically, a first strained material layer having a lattice constant smaller than that of the first channel layer material may be selected, for example, when the first channel layer 102 is silicon, the first strained material layer may be silicon germanium, and when the first channel layer 102 is germanium tin, the first strained material layer may be monocrystalline germanium.
Similarly, when the second strained material layer provides compressive stress to the second channel layer 112, hole mobility of the second channel layer 112 may be improved, and the lattice constant of the second strained material layer may be greater than that of the second channel layer 112; when the second strained material layer provides tensile stress to the second channel layer 112, electron mobility of the second channel layer 112 may be improved, and a lattice constant of the second strained material layer may be smaller than that of the second channel layer 112.
That is, the first strained material layer and the second strained material layer are selected to be related to the materials of the first channel layer 102 and the second channel layer 112, and there may be a material that can provide tensile stress to the first channel layer 102 and tensile stress to the second channel layer 112 at the same time, so that the first strained material layer and the second strained material layer may be the same material or different materials, and the first strained material layer and the second strained material layer may be directly based or may be isolated by other materials, which is not limited herein.
In fact, in the embodiment of the present application, only the first stacked layer and the second stacked layer having different materials are taken as examples, and the drawings are also only for illustrating the examples, and there may be a third stacked layer and a fourth stacked layer having different materials from the first stacked layer and the second stacked layer in actual operation, and referring to fig. 28 and fig. 29, a schematic distribution diagram of stacked layers is provided in the embodiment of the present application, where the materials of the first stacked layer 511, the second stacked layer 521, the third stacked layer 531 and the fourth stacked layer 541 are different from each other. Of course, in actual practice, other stacked layers may be included, which are not illustrated here.
The positional relationship between the stacked layers may be not only the positional relationship shown in the figure, for example, may be arranged in an array, may be arranged in a staggered manner, or may be arranged at a certain angle. Regardless of the positional relationship of the respective stacked layers, a strained material layer may be formed on the sidewall of the side where the channel layer remains in the respective stacked layers, thereby providing tensile stress or tensile stress to the channel layer. Referring to fig. 28 and 29, a first strained material layer 512 is formed on the sidewall of the first stacked layer 511, a second strained material layer 522 is formed on the sidewall of the second stacked layer 521, a third strained material layer 532 is formed on the sidewall of the third stacked layer 531, and a fourth strained material layer 542 is formed on the sidewall of the fourth stacked layer 541.
The embodiment of the application provides a manufacturing method of a semiconductor device, a dielectric layer may be formed on a substrate, a first stacked layer and a second stacked layer are formed in the dielectric layer, materials of the first stacked layer and the second stacked layer are not identical, the first stacked layer is formed in a first through hole 201 longitudinally penetrating through the dielectric layer, the first stacked layer comprises a first doped material layer, a first channel layer and a second doped material layer, the second stacked layer is formed in a second through hole longitudinally penetrating through the dielectric layer, the second stacked layer comprises a third doped material layer, a second channel layer and a fourth doped material layer, and then a first device may be formed in the first stacked layer and a second device may be formed in the second stacked layer.
In this way, in the first device, the first doped material layer and the second doped material layer are used as source and drain, a longitudinal first channel layer is arranged between the source and drain, in the second device, the third doped material layer and the fourth doped material layer are used as source and drain, a longitudinal second channel layer is arranged between the source and drain, the lengths of the first channel layer and the second channel layer are related to the thickness of the film layer, and high-precision etching is not needed, so that a small-size high-performance device can be obtained by using lower cost and simple process, and in addition, as the first stacked layer and the second stacked layer which are made of different materials can be included on the substrate, the first device and the second device which are made of different materials can be included, so that diversified device structures can be provided, and the requirements of users can be met.
Based on the method for manufacturing the semiconductor device structure provided in the above embodiment, the embodiment of the present application further provides a semiconductor structure, as shown in fig. 26, including:
a substrate;
a dielectric material on the substrate;
a first stack of layers in the dielectric material; the first stacking layer is formed in a first through hole longitudinally penetrating through the dielectric material and comprises a first doped material layer, a first channel layer and a second doped material layer;
A second stacked layer in the dielectric materials, the materials of the first stacked layer and the second stacked layer are not identical, and the dielectric layer between the first stacked layer and the second stacked layer is used as an isolation layer; the second stacked layer is formed in a second through hole longitudinally penetrating through the dielectric material and comprises a third doped material layer, a second channel layer and a fourth doped material layer;
a first device in the first stack layer, the first device comprising a first doped material layer, a first channel layer, and a second doped material layer, and a first gate dielectric layer and a first gate layer in a first gap; the first channel layer is recessed from the first doped material layer and the second doped material layer on at least one side wall of the first stacked layer except the side wall contacted with the isolation layer, so that the first gap is formed between the first doped material layer and the second doped material layer;
a second device in the second stack layer, the second device comprising a third doped material layer, a second channel layer, and a fourth doped material layer, and a second gate dielectric layer and a second gate layer in a second gap; the second channel layer is recessed from the third doped material layer and the fourth doped material layer on at least one side wall of the second stack layer except the side wall in contact with the isolation layer, so that the second gap is formed between the first doped material layer and the second doped material layer.
Optionally, the first doped material layer, the first channel layer and the second doped material layer are sequentially silicon germanium, silicon germanium, or silicon, silicon germanium, silicon, or germanium, germanium tin, germanium; the third doped material layer, the second channel layer and the fourth doped material layer are sequentially silicon germanium, silicon and silicon germanium, or silicon, silicon germanium and silicon, or germanium, germanium tin and germanium.
Optionally, a buffer layer is formed between the substrate and the first doped material layer, and/or a buffer layer is formed between the substrate and the third doped material layer.
Optionally, an intrinsic layer of the first doped material layer is formed between the first doped material layer and the first channel layer, and an intrinsic layer of the second doped material layer is formed between the first channel layer and the second doped material layer; and/or an intrinsic layer of the third doped material layer is formed between the third doped material layer and the second channel layer, and an intrinsic layer of the fourth doped material layer is formed between the second channel layer and the fourth doped material layer.
Optionally, an insulating layer is formed between the first stacked layer and the second stacked layer; the insulating layer comprises a first strained material layer and/or a second strained material layer, the first strained material layer is formed on the side wall of the first stacked layer and is used for providing compressive stress or tensile stress for the first channel layer, and the second strained material layer is formed on the side wall of the second stacked layer and is used for providing compressive stress or tensile stress for the second channel layer.
In this specification, each embodiment is described in a progressive manner, and identical and similar parts of each embodiment are all referred to each other, and each embodiment mainly describes differences from other embodiments. In particular, for device embodiments, since they are substantially similar to method embodiments, the description is relatively simple, as relevant to see the section of the method embodiments.
The foregoing is merely a preferred embodiment of the present application, and although the present application has been disclosed in the preferred embodiment, it is not intended to limit the present application. Any person skilled in the art may make many possible variations and modifications to the technical solution of the present application, or modify equivalent embodiments, using the methods and technical contents disclosed above, without departing from the scope of the technical solution of the present application. Therefore, any simple modification, equivalent variation and modification of the above embodiments according to the technical substance of the present application, which do not depart from the content of the technical solution of the present application, still fall within the scope of the technical solution of the present application.

Claims (10)

1. A method of manufacturing a semiconductor device, comprising:
Forming a dielectric layer on a substrate;
forming a first stacked layer and a second stacked layer in the dielectric layer, wherein the materials of the first stacked layer and the second stacked layer are not identical, and the dielectric layer between the first stacked layer and the second stacked layer is used as an isolation layer; the first stacking layer is formed in a first through hole longitudinally penetrating through the dielectric layer and comprises a first doping material layer, a first channel layer and a second doping material layer; the second stacking layer is formed in a second through hole longitudinally penetrating through the dielectric layer and comprises a third doped material layer, a second channel layer and a fourth doped material layer;
forming a first device in the first stacked layer;
forming a second device in the second stacked layer;
the first device comprises a first doped material layer, a first channel layer, a second doped material layer, a first gate dielectric layer and a first gate layer in a first gap, wherein the first doped material layer, the first channel layer and the second doped material layer are arranged on the side wall of the isolation layer; the first channel layer is recessed from the first doped material layer and the second doped material layer on at least one side wall of the first stacked layer except the side wall contacted with the isolation layer, so that the first gap is formed between the first doped material layer and the second doped material layer;
The second device comprises a third doped material layer, a second channel layer, a fourth doped material layer, a second gate dielectric layer and a second gate layer in a second gap, which are arranged on the side wall of the isolation layer; the second channel layer is recessed from the third doped material layer and the fourth doped material layer on at least one side wall of the second stack layer except the side wall in contact with the isolation layer, so that the second gap is formed between the third doped material layer and the fourth doped material layer.
2. The method of claim 1, wherein the step of determining the position of the substrate comprises,
forming a first device in the first stacked layer, comprising:
etching the dielectric layer to form a first groove so as to expose at least one side wall of the first stacked layer except the side wall contacted with the isolation layer; etching the first channel layer from the side direction through the first groove, and reserving the first channel layer on the side wall of the isolation layer to form a first gap between the first doped material layer and the second doped material layer; forming a first gate dielectric layer and a first gate layer in the first gap through the first trench; filling the first trench with a dielectric material;
Forming a second device in the second stacked layer, comprising:
etching the dielectric layer to form a second groove so as to expose at least one side wall of the second stacked layer except the side wall contacted with the isolation layer; etching the second channel layer from the side direction through the second groove, and reserving the second channel layer on the side wall of the isolation layer to form a first gap between the first doped material layer and the second doped material layer; forming a second gate dielectric layer and a second gate layer in the second gap through the second trench; the second trench is filled with a dielectric material.
3. The method of claim 2, wherein the step of determining the position of the substrate comprises,
the etching the first channel layer from the lateral direction through the first trench includes:
performing a plurality of first oxidation removal processes, the first oxidation removal process comprising: performing an oxidation process of the first channel layer to form a first oxide layer on the surface of the first channel layer exposed in the first trench; removing the first oxide layer;
the etching the second channel layer from the lateral direction through the second trench includes:
Performing a plurality of second oxidation removal processes, the second oxidation removal process comprising: performing an oxidation process of the second channel layer to form a second oxide layer on the surface of the second channel layer exposed in the second trench; and removing the second oxide layer.
4. The method of claim 2, wherein the step of determining the position of the substrate comprises,
the forming a first gate dielectric layer and a first gate layer in the first gap through the first trench includes:
depositing a first gate dielectric layer and a first gate electrode layer, and removing the first gate electrode layer and the first gate dielectric layer outside the first gap through the first groove;
forming a second gate dielectric layer and a second gate layer in the second gap through the second trench, including:
and depositing a second gate dielectric layer and a second gate electrode layer, and removing the second gate electrode layer and the second gate dielectric layer outside the second gap through the second groove.
5. The method of any of claims 1-4, wherein the first doped material layer, the first channel layer, and the second doped material layer are, in order, silicon germanium, silicon germanium, or silicon, silicon germanium, silicon, or germanium, germanium tin, germanium; the third doped material layer, the second channel layer and the fourth doped material layer are sequentially silicon germanium, silicon and silicon germanium, or silicon, silicon germanium and silicon, or germanium, germanium tin and germanium.
6. The method according to any one of claims 1-4, wherein a buffer layer is formed between the substrate and the first doped material layer and/or a buffer layer is formed between the substrate and the third doped material layer.
7. The method of any of claims 1-4, wherein an intrinsic layer of the first doped material layer is formed between the first doped material layer and the first channel layer, and an intrinsic layer of the second doped material layer is formed between the first channel layer and the second doped material layer; and/or an intrinsic layer of the third doped material layer is formed between the third doped material layer and the second channel layer, and an intrinsic layer of the fourth doped material layer is formed between the second channel layer and the fourth doped material layer.
8. The method of any one of claims 1-4, further comprising:
replacing the isolation layer with an insulation layer; the insulating layer comprises a first strained material layer and/or a second strained material layer, the first strained material layer is formed on the side wall of the first stacked layer and is used for providing compressive stress or tensile stress for the first channel layer, and the second strained material layer is formed on the side wall of the second stacked layer and is used for providing compressive stress or tensile stress for the second channel layer.
9. A semiconductor device, comprising:
a substrate;
a dielectric material on the substrate;
a first stack of layers in the dielectric material; the first stacking layer is formed in a first through hole longitudinally penetrating through the dielectric material and comprises a first doped material layer, a first channel layer and a second doped material layer;
a second stacked layer in the dielectric materials, the materials of the first stacked layer and the second stacked layer are not identical, and the dielectric layer between the first stacked layer and the second stacked layer is used as an isolation layer; the second stacked layer is formed in a second through hole longitudinally penetrating through the dielectric material and comprises a third doped material layer, a second channel layer and a fourth doped material layer;
a first device in the first stack layer, the first device comprising a first doped material layer, a first channel layer, and a second doped material layer, and a first gate dielectric layer and a first gate layer in a first gap; the first channel layer is recessed from the first doped material layer and the second doped material layer on at least one side wall of the first stacked layer except the side wall contacted with the isolation layer, so that the first gap is formed between the first doped material layer and the second doped material layer;
A second device in the second stack layer, the second device comprising a third doped material layer, a second channel layer, and a fourth doped material layer, and a second gate dielectric layer and a second gate layer in a second gap; the second channel layer is recessed from the third doped material layer and the fourth doped material layer on at least one side wall of the second stack layer except the side wall in contact with the isolation layer, so that the second gap is formed between the first doped material layer and the second doped material layer.
10. The semiconductor device of claim 9, wherein the first doped material layer, the first channel layer, and the second doped material layer are, in order, silicon germanium, silicon germanium, or silicon, silicon germanium, silicon, or germanium, germanium tin, germanium; the third doped material layer, the second channel layer and the fourth doped material layer are sequentially silicon germanium, silicon and silicon germanium, or silicon, silicon germanium and silicon, or germanium, germanium tin and germanium.
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