CN111554776A - Cleaning method of black silicon flocking sheet - Google Patents
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- CN111554776A CN111554776A CN202010361624.1A CN202010361624A CN111554776A CN 111554776 A CN111554776 A CN 111554776A CN 202010361624 A CN202010361624 A CN 202010361624A CN 111554776 A CN111554776 A CN 111554776A
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- 229910021418 black silicon Inorganic materials 0.000 title claims abstract description 70
- 238000000034 method Methods 0.000 title claims abstract description 54
- 238000004140 cleaning Methods 0.000 title claims abstract description 41
- 239000000243 solution Substances 0.000 claims abstract description 42
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 34
- 238000002791 soaking Methods 0.000 claims abstract description 29
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000001035 drying Methods 0.000 claims abstract description 16
- 239000002253 acid Substances 0.000 claims abstract description 10
- 150000004673 fluoride salts Chemical class 0.000 claims abstract description 6
- 238000002156 mixing Methods 0.000 claims abstract description 6
- 239000012266 salt solution Substances 0.000 claims abstract description 6
- 230000008569 process Effects 0.000 claims description 17
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 10
- 239000007864 aqueous solution Substances 0.000 claims description 8
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 claims description 6
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 claims description 6
- 235000003270 potassium fluoride Nutrition 0.000 claims description 3
- 239000011698 potassium fluoride Substances 0.000 claims description 3
- 235000013024 sodium fluoride Nutrition 0.000 claims description 3
- 239000011775 sodium fluoride Substances 0.000 claims description 3
- 238000009210 therapy by ultrasound Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 3
- 238000001579 optical reflectometry Methods 0.000 abstract description 2
- 230000007797 corrosion Effects 0.000 description 8
- 238000005260 corrosion Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 210000002268 wool Anatomy 0.000 description 8
- 239000011259 mixed solution Substances 0.000 description 6
- 238000004506 ultrasonic cleaning Methods 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000006259 organic additive Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Wood Science & Technology (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- Life Sciences & Earth Sciences (AREA)
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Abstract
The invention relates to the technical field of solar cell manufacturing, and particularly discloses a cleaning method of a black silicon flocking sheet. The black silicon texturing sheet is obtained by a metal ion-induced black silicon texturing technology; the cleaning method comprises the following steps: sequentially soaking the silicon wafer by using an ozone water solution, pure water, a mixed acid solution, pure water, an ozone water solution and pure water, and then drying; the mixed acid solution is formed by mixing 40-49% of hydrofluoric acid solution and 37-40% of fluoride salt solution according to the volume ratio of 2-10: 1. The cleaning method can control the light reflectivity of the suede, improve the photoelectric conversion efficiency, finally form a layer of extremely thin silicon oxide film on the suede surface after micro finishing, and has obvious cleaning effect on the surface of a silicon wafer.
Description
Technical Field
The invention relates to the technical field of solar cell manufacturing, in particular to a cleaning method of a black silicon flocking sheet.
Background
Black silicon texturing (metal-induced catalytic etching) is a method which is developed in recent years and can form a good submicron-level rough surface on a diamond wire silicon wafer, so that the light absorption rate of the surface of the silicon wafer can be improved, and the photoelectric conversion efficiency of a cell can be further improved. The first process step of solar cell fabrication is texturing, which is to fabricate irregular etch pits on the surface of a silicon wafer so that more light can enter the silicon wafer when incident.
After the silicon wafer cutting technology is changed from mortar cutting to diamond wire cutting, the thickness of a damaged layer on the surface of a silicon wafer is greatly reduced, the wafer yield is increased, and the damaged layer is reduced, so that the original nitric acid/hydrofluoric acid corrosion system for making wool by cutting the damaged layer does not work any more, and a laser etching method, a reactive ion etching method and a metal catalyst solution etching method (namely a metal ion-induced black silicon wool making technology) are replaced. The principle of the black silicon texturing technology induced by metal ions is as follows: the micro-etching pits are formed on the surface of the silicon wafer through metal ion induced catalysis, the micro-etching pits are enlarged to be submicron size through a chemical method, and the effect of improving light absorption is achieved by utilizing multiple reflections of the etching pits on incident light. The main process steps of black silicon texturing by utilizing metal ion induction are as follows: rough polishing (corroding a thin damage layer), silver deposition (uniformly spreading metal ions on the silicon surface), hole digging (accelerating corrosion by using the metal ions to form a tiny corrosion pit), hole expanding (expanding the tiny pit into a submicron-grade corrosion pit), demetalization (removing the metal ions), cleaning and drying. In the process, metal ions and organic additives are needed to control the reaction speed, so that the metal ions and organic matters are easily attached to the surface of the silicon wafer. In the large-scale production process, if the conditions of incomplete desilvering or incomplete organic matter removal exist, the texturing yield and the battery efficiency are influencedThe impact is. Therefore, the cleaning method of the black silicon texturing sheet induced by the metal ions is very critical, and if the control is not good, a silicon wafer with good appearance and high efficiency cannot be obtained. The traditional cleaning steps mainly adopt HF/HCl and HF/H2O2And HF and other treatment liquids are used for cleaning, and the cleaning method is used for the metal-induced black silicon textured sheet, so that the prepared textured surface has high reflectivity, poor stability and low light absorption capacity, and the photoelectric conversion efficiency of the prepared solar cell is seriously influenced.
Disclosure of Invention
Aiming at the problems that the reflectivity of the suede is easy to increase, the stability of the suede is poor and the photoelectric conversion efficiency is low in the existing cleaning method for the black silicon suede making process, the invention provides a cleaning method for a black silicon suede making sheet.
In order to achieve the purpose of the invention, the embodiment of the invention adopts the following technical scheme:
a cleaning method of a black silicon texturing sheet is characterized in that the black silicon texturing sheet is obtained by a metal ion induced black silicon texturing technology; the cleaning method comprises the following steps: sequentially soaking the silicon wafer by using an ozone water solution, pure water, a mixed acid solution, pure water, an ozone water solution and pure water, and then drying;
the mixed acid solution is formed by mixing 40-49% of hydrofluoric acid solution and 37-40% of fluoride salt solution according to the volume ratio of 2-10: 1.
The black silicon texturing process induced by the metal ions comprises rough polishing (corroding a thin damage layer), silver deposition (uniformly spreading the metal ions on the silicon surface), hole digging (accelerating corrosion by the metal ions to form a tiny corrosion pit), hole expanding (expanding the tiny pit into a submicron corrosion pit), demetallization (removing the metal ions), cleaning and drying. Compared with the prior art, the cleaning method provided by the invention can effectively remove organic matters and metal ions possibly remaining on the black silicon texturing sheet obtained in the black silicon texturing process induced by the metal ions, and slightly etch the texture of the silicon wafer to improve the texture shape, thereby being beneficial to the subsequent passivation process and obviously improving the photoelectric conversion efficiency. The steps and sequence of the cleaning method have specific selectivity on the black silicon textured surface, the inventor finds that the cleaning steps have obvious cleaning effect (reflectivity is controlled and battery efficiency is improved) on the surface of the black silicon textured sheet induced by metal ions in the research process, and the inventor tries to change the cleaning sequence and finds that the treatment effect is greatly reduced.
According to the invention, through a specific cleaning step and a specific mixed acid solution, organic matter impurities and metal ions possibly remaining on the surface of the silicon wafer can be effectively removed, and the surface of the suede can be subjected to slow-speed uniform etching and micro-finishing when the black silicon suede is treated, so that the suede structure of the black silicon suede is further optimized, the quality of the black silicon suede is improved, the light reflectivity of the suede is effectively controlled, and the battery efficiency of the black silicon suede is effectively improved. And the cleaning method can finally form a layer of ultrathin silicon oxide film on the surface of the micro-finished suede, the ultrathin silicon oxide film cannot influence the photoelectric conversion efficiency of the silicon wafer, can also effectively prevent the influence of floating particles on the surface of the silicon wafer in the subsequent drying process or the process of contacting with air, and greatly prolongs the service life of the solar cell while ensuring the photoelectric conversion efficiency of the solar cell.
Preferably, the temperature for soaking treatment by the ozone water solution is 20-55 ℃, and the soaking time is 100-300 s.
Preferably, the concentration of ozone in the ozone aqueous solution is 0.4-0.6g/m3。
Preferably, the ultrasonic treatment is carried out during the soaking treatment by the ozone water solution.
The ozone water solution and the ultrasonic treatment are matched to treat the surface of the silicon wafer, so that the removal efficiency of organic impurities remaining on the surface of the silicon wafer can be further improved.
Preferably, the fluoride salt solution is one of an ammonium fluoride solution, a sodium fluoride solution and a potassium fluoride solution.
Preferably, the fluoride salt solution is an ammonium fluoride solution.
The mixed acid solution containing the ammonium fluoride can better control the slow corrosion rate of the cleaning process to the surface of the silicon wafer and the etching and finishing uniformity, reduce the surface roughness and further improve the texture quality and the cell efficiency of the solar cell.
Preferably, the temperature of the mixed acid solution for soaking treatment is 20-50 ℃, and the soaking time is 2-6 min.
Preferably, the temperature of the pure water soaking treatment is 20-25 ℃, and the soaking time is 2-8 min.
Preferably, the drying temperature is 80-100 ℃, and the drying time is 10-20 min.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Example 1
In the process of manufacturing the solar cell, the black silicon flocking sheet induced by metal ions is cleaned as follows:
(1) the black silicon texturing sheet which is demetallized in the black silicon texturing process induced by metal ions is placed at the temperature of 20 ℃ and the ozone concentration of 0.4g/m3In the aqueous solution of ozone, ultrasonic cleaning treatment is carried out for 100 s;
(2) soaking the black silicon flocking sheet treated in the step (1) for 2min by pure water at the temperature of 20 ℃;
(3) soaking the black silicon flocking sheet cleaned by pure water in the step (2) in a mixed solution of hydrofluoric acid and ammonium fluoride at the temperature of 20 ℃ for 2min, wherein the mixed solution is formed by mixing a hydrofluoric acid solution with the mass concentration of 40% and an ammonium fluoride solution with the mass concentration of 37% according to the volume ratio of 2: 1;
(4) soaking the black silicon flocking sheet processed in the step (3) for 2min by pure water with the temperature of 20 ℃;
(5) putting the black silicon wool making sheet treated in the step (4) into a furnace at the temperature of 20 ℃ and the ozone concentration of 0.4g/m3In the aqueous solution of ozone, ultrasonic cleaning treatment is carried out for 100 s;
(6) soaking the black silicon texturing sheet processed in the step (5) for 2min by using pure water with the temperature of 20 ℃;
(7) and (4) drying the black silicon wool making sheet treated in the step (6) in a drying oven at the temperature of 80 ℃ for 10 min.
Example 2
In the process of manufacturing the solar cell, the black silicon flocking sheet induced by metal ions is cleaned as follows:
(1) the black silicon texturing sheet which is demetallized in the black silicon texturing process induced by metal ions is placed at the temperature of 40 ℃ and the ozone concentration of 0.5g/m3In the aqueous solution of ozone, ultrasonic cleaning treatment is carried out for 200 s;
(2) soaking the black silicon texturing sheet treated in the step (1) for 5min by using pure water with the temperature of 22 ℃;
(3) soaking the black silicon flocking sheet cleaned by pure water in the step (2) in a mixed solution of hydrofluoric acid and ammonium fluoride at the temperature of 40 ℃ for 4min, wherein the mixed solution is formed by mixing a hydrofluoric acid solution with the mass concentration of 45% and a sodium fluoride solution with the mass concentration of 38% according to the volume ratio of 5: 1;
(4) soaking the black silicon flocking sheet processed in the step (3) for 5min by pure water with the temperature of 22 ℃;
(5) putting the black silicon wool making sheet treated in the step (4) into a furnace at the temperature of 22 ℃ and the ozone concentration of 0.5g/m3In the aqueous solution of ozone, ultrasonic cleaning treatment is carried out for 200 s;
(6) soaking the black silicon texturing sheet processed in the step (5) for 5min by pure water with the temperature of 22 ℃;
(7) and (4) drying the black silicon wool making sheet treated in the step (6) in a drying oven at the temperature of 90 ℃ for 15 min.
Example 3
In the process of manufacturing the solar cell, the black silicon flocking sheet induced by metal ions is cleaned as follows:
(1) the black silicon texturing sheet which is demetallized in the black silicon texturing process induced by metal ions is placed at the temperature of 55 ℃ and the ozone concentration of 0.6g/m3In the aqueous solution of ozone, ultrasonic cleaning treatment is carried out for 300 s;
(2) soaking the black silicon texturing sheet processed in the step (1) for 8min by using pure water with the temperature of 25 ℃;
(3) soaking the black silicon flocking sheet cleaned by pure water in the step (2) in a mixed solution of hydrofluoric acid and ammonium fluoride at the temperature of 50 ℃ for 6min, wherein the mixed solution is formed by mixing 49% by mass of hydrofluoric acid solution and 40% by mass of potassium fluoride solution according to the volume ratio of 10: 1;
(4) soaking the black silicon texturing sheet processed in the step (3) for 8min by using pure water with the temperature of 25 ℃;
(5) putting the black silicon wool making sheet treated in the step (4) into a furnace at the temperature of 55 ℃ and the ozone concentration of 0.6g/m3In the aqueous solution of ozone, ultrasonic cleaning treatment is carried out for 300 s;
(6) soaking the black silicon texturing sheet processed in the step (5) for 8min by using pure water with the temperature of 25 ℃;
(7) and (4) drying the black silicon wool making sheet treated in the step (6) in a drying oven at the temperature of 100 ℃ for 20 min.
Comparative example 1
The other cleaning methods were the same as in example 1 except that HCl was used in the same mass concentration instead of the ammonium fluoride solution in step (3) of example 1.
The surface reflectance and the cell efficiency of the black silicon texturing sheet treated by the cleaning methods of examples 1 to 3 and comparative example 1 were measured, and the measurement results are shown in table 1.
TABLE 1 reflectance and cell efficiency
As can be seen from the data in table 1, the black silicon texturing sheet treated by the cleaning method of the present invention has a low improvement rate of reflectance, which is improved by 0.07-0.11% compared to the battery efficiency before cleaning, and the battery efficiency range of the black silicon texturing sheet with very poor reflectance is significantly reduced. It is shown that the surface reflectivity of the black silicon texturing sheet in the embodiment 1-3 is basically kept at the original level after the cleaning method of the invention, and the battery efficiency is greatly improved. The cleaning method has the advantages that the etching and trimming on the surface of the black silicon texturing sheet are uniform, the texturing form is improved, and the uniformity of the texturing surface of the black silicon texturing sheet is ensured.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents or improvements made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (9)
1. A cleaning method of black silicon flocking sheets is characterized in that: the black silicon texturing sheet is obtained in a metal ion-induced black silicon texturing process; the cleaning method comprises the following steps: sequentially soaking the silicon wafer by using an ozone water solution, pure water, a mixed acid solution, pure water, an ozone water solution and pure water, and then drying;
the mixed acid solution is formed by mixing 40-49% of hydrofluoric acid solution and 37-40% of fluoride salt solution according to the volume ratio of 2-10: 1.
2. The cleaning method of the black silicon flocking sheet as recited in claim 1, wherein: the temperature for soaking treatment by the ozone water solution is 20-55 ℃, and the soaking time is 100-300 s.
3. The cleaning method of the black silicon flocking sheet as recited in claim 1, wherein: the concentration of ozone in the ozone water solution is 0.4-0.6g/m3。
4. The method for cleaning black silicon suede sheet according to any one of claims 1 to 3, wherein: and carrying out ultrasonic treatment in the process of soaking treatment by using the ozone aqueous solution.
5. The cleaning method of the black silicon flocking sheet as recited in claim 1, wherein: the fluoride salt solution is at least one of ammonium fluoride solution, sodium fluoride solution and potassium fluoride solution.
6. The cleaning method of the black silicon suede sheet according to claim 5, wherein: the fluoate solution is ammonium fluoride solution.
7. The cleaning method of the black silicon flocking sheet as recited in claim 1, wherein: the temperature of the mixed acid solution for soaking treatment is 20-50 ℃, and the soaking time is 2-6 min.
8. The cleaning method of the black silicon flocking sheet as recited in claim 1, wherein: the temperature of the pure water soaking treatment is 20-25 ℃, and the soaking time is 2-8 min.
9. The cleaning method of the black silicon flocking sheet as recited in claim 1, wherein: the drying temperature is 80-100 ℃, and the drying time is 10-20 min.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112652671A (en) * | 2020-12-30 | 2021-04-13 | 泰州隆基乐叶光伏科技有限公司 | Texturing method, monocrystalline silicon wafer and monocrystalline silicon solar cell |
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| WO2020006795A1 (en) * | 2018-07-04 | 2020-01-09 | 常州捷佳创精密机械有限公司 | Method and device for realizing etching and polishing of silicon wafer with alkaline system by using ozone |
| CN109545660A (en) * | 2018-11-13 | 2019-03-29 | 国家电投集团西安太阳能电力有限公司 | The cleaning method of the used silicon wafer of solar battery |
| CN110416369A (en) * | 2019-08-21 | 2019-11-05 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | PERC battery cleaning and texturing technique and system |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112652671A (en) * | 2020-12-30 | 2021-04-13 | 泰州隆基乐叶光伏科技有限公司 | Texturing method, monocrystalline silicon wafer and monocrystalline silicon solar cell |
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