CN111549319A - Vacuum evaporation system and vacuum evaporation method - Google Patents
Vacuum evaporation system and vacuum evaporation method Download PDFInfo
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- CN111549319A CN111549319A CN202010429257.4A CN202010429257A CN111549319A CN 111549319 A CN111549319 A CN 111549319A CN 202010429257 A CN202010429257 A CN 202010429257A CN 111549319 A CN111549319 A CN 111549319A
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- 238000007738 vacuum evaporation Methods 0.000 title claims abstract description 72
- 238000001771 vacuum deposition Methods 0.000 title claims abstract description 22
- 238000001704 evaporation Methods 0.000 claims abstract description 488
- 230000008020 evaporation Effects 0.000 claims abstract description 487
- 239000000463 material Substances 0.000 claims abstract description 183
- 230000000670 limiting effect Effects 0.000 claims abstract description 78
- 238000001514 detection method Methods 0.000 claims abstract description 57
- 239000011248 coating agent Substances 0.000 claims abstract description 15
- 238000000576 coating method Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims description 128
- 238000007740 vapor deposition Methods 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 13
- 239000007769 metal material Substances 0.000 claims description 3
- 239000011368 organic material Substances 0.000 claims description 3
- 229910010272 inorganic material Inorganic materials 0.000 claims description 2
- 239000011147 inorganic material Substances 0.000 claims description 2
- 238000009834 vaporization Methods 0.000 abstract description 4
- 230000008016 vaporization Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 62
- 238000010586 diagram Methods 0.000 description 28
- 230000015572 biosynthetic process Effects 0.000 description 17
- 238000002329 infrared spectrum Methods 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000002238 attenuated effect Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000010549 co-Evaporation Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
- C23C14/547—Controlling the film thickness or evaporation rate using measurement on deposited material using optical methods
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- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The application discloses vacuum evaporation system and vacuum evaporation method relates to the evaporation coating field, includes: the evaporation device comprises a movable carrying platform, wherein M evaporation sources and M angle limiting units are arranged on the movable carrying platform, each angle limiting unit comprises a first opening, and the evaporation range of evaporation materials is limited by the first opening; the signal transmitting unit transmits a first infrared signal to the evaporation coating range, and the first infrared signal forms a second infrared signal after passing through the evaporation coating material; the signal detection unit receives the second infrared signal and analyzes the evaporation material contained in the evaporation range through the second infrared signal; when N evaporation materials are contained in the evaporation range, the first driving unit drives the angle limiting unit to move, and the evaporation range is adjusted, wherein N is an integer smaller than M. This application limits the unit motion through first drive unit drive angle, adjusts various coating by vaporization materials's coating by vaporization scope for multiple coating by vaporization material coincides completely on the face of evaporating, avoids appearing the ultrathin layer, thereby improves device performance and product yield.
Description
Technical Field
The application relates to the field of evaporation, in particular to a vacuum evaporation system and a vacuum evaporation method.
Background
The respective film layers constituting the organic electroluminescent device are generally formed by evaporation, and at present, evaporation sources widely used in the evaporation process include a point-like evaporation source and a line-like evaporation source, the evaporation source having a crucible for accommodating an evaporation material and a nozzle for ejecting the evaporation material, the evaporation material being evaporated or sublimated from the crucible, and the vaporized evaporation material being ejected from the nozzle onto a substrate to be evaporated provided in a vacuum chamber to form a desired film layer.
In the case of performing the film layer evaporation, if a desired film layer is formed by mixing a plurality of materials, for example, a light emitting layer, two or more evaporation sources containing different evaporation materials need to be collectively evaporated to form a mixed layer of the plurality of materials. However, the vaporized evaporation material is generally divergent after being sprayed out through a nozzle on the crucible, and the film forming range of different evaporation materials is deviated, so that an ultrathin layer can be formed at the edge region of the substrate to be evaporated in the evaporation process, and the ultrathin layer can cause adverse effects on the performance of devices and the yield of products. Therefore, a vacuum evaporation system capable of avoiding formation of ultra-thin layers during co-evaporation of multiple evaporation sources is needed to improve device performance and product yield.
Disclosure of Invention
In view of this, the present application provides a vacuum evaporation system and a vacuum evaporation method, which adjust the evaporation range of various evaporation materials by driving the angle limiting unit to move by the first driving unit, so that various evaporation materials are completely overlapped on the evaporation surface, thereby avoiding the occurrence of an ultra-thin layer, and improving the device performance and the product yield.
In order to solve the technical problem, the following technical scheme is adopted:
in one aspect, the present application provides a vacuum evaporation system, comprising:
the vapor deposition substrate comprises a vapor deposition surface;
the evaporation device comprises a movable carrying platform, wherein M evaporation sources and M angle limiting units are arranged on the movable carrying platform, M is an integer greater than or equal to 2, and the evaporation surface is the surface of the evaporation substrate close to the evaporation sources; the evaporation source comprises evaporation materials, and the evaporation materials contained in different evaporation sources are different; the angle limiting unit comprises a first opening, and the first opening is positioned between the evaporation source and the evaporation substrate in a direction perpendicular to the plane of the evaporation substrate; the evaporation range of the evaporation material on the evaporation substrate is limited by the first opening;
the signal transmitting unit transmits a first infrared signal to the evaporation coating range, and the first infrared signal forms a second infrared signal after passing through an evaporation coating material;
at least one signal detection unit, wherein the signal detection unit receives the second infrared signal and analyzes the evaporation material contained in the evaporation range through the second infrared signal;
the first driving unit is electrically connected with the angle limiting unit, and when N evaporation materials are contained in the evaporation range, the angle limiting unit is driven to move through the first driving unit to adjust the evaporation range, wherein N is an integer smaller than M.
In another aspect, the present application provides a vacuum evaporation method, including:
providing an evaporation substrate, wherein the evaporation substrate comprises an evaporation surface;
providing a movable carrier, and arranging M evaporation sources and M angle limiting units on the movable carrier, wherein M is an integer greater than or equal to 2, and the evaporation surface is the surface of the evaporation substrate close to the evaporation sources; the evaporation source comprises evaporation materials, and the evaporation materials contained in different evaporation sources are different; the angle limiting unit comprises a first opening, and the first opening is positioned between the evaporation source and the evaporation substrate in a direction perpendicular to the plane of the evaporation substrate; the evaporation range of the evaporation material on the evaporation substrate is limited by the first opening;
arranging at least one signal transmitting unit, wherein the signal transmitting unit transmits a first infrared signal, and the first infrared signal forms a second infrared signal after passing through the evaporation material;
arranging at least one signal detection unit, wherein the signal detection unit receives the second infrared signal and analyzes the evaporation materials contained in the evaporation range through the second infrared signal;
and a first driving unit is arranged and electrically connected with the angle limiting unit, and when the evaporation range contains N evaporation materials, the first driving unit drives the angle limiting unit to move to adjust the evaporation range, wherein N is an integer less than M.
Compared with the prior art, the vacuum evaporation system and the vacuum evaporation method provided by the application at least realize the following beneficial effects:
the application provides a vacuum evaporation system and vacuum evaporation method, contain M kinds of evaporation sources, wherein M is more than or equal to 2's integer, and the evaporation material in the evaporation source of difference is different, in the evaporation process, the first infrared signal of signal emission unit to evaporation substrate transmission, first infrared signal forms second infrared signal after evaporation material absorbs, the detector receives the evaporation material that contains in the spectral analysis evaporation coating range through second infrared signal behind the second infrared signal, when the kind of the evaporation material that contains in this evaporation coating range is less than M, first drive unit drive angle limiting unit moves, thereby adjust the evaporation coating range through first opening, make evaporation material coincide completely on the evaporation coating face in the M, avoid appearing the ultra-thin layer, thereby improve device performance and product yield.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:
FIG. 1 is a schematic structural diagram of a conventional vacuum evaporation system for evaporation under ideal conditions;
FIG. 2 is a schematic structural diagram of a film layer obtained by evaporation under ideal conditions shown in FIG. 1;
FIG. 3 is a schematic diagram of a vacuum evaporation system in the prior art;
FIG. 4 is a schematic view of a film layer structure obtained by evaporation under the evaporation condition shown in FIG. 3;
FIG. 5 is a schematic view of another structure of a vacuum evaporation system in the prior art for evaporation deposition;
FIG. 6 is a schematic view of a film layer structure obtained by evaporation under the evaporation condition shown in FIG. 5;
fig. 7 is a schematic structural diagram of a vacuum evaporation system according to an embodiment of the present disclosure;
fig. 8 is a schematic view illustrating adjustment of a vapor deposition range of the vacuum vapor deposition system according to the embodiment of the present disclosure;
fig. 9 is a schematic structural diagram of a vacuum evaporation system including three evaporation sources according to an embodiment of the present application;
fig. 10 is a schematic structural diagram of a vacuum evaporation system including a second driving unit according to an embodiment of the present disclosure;
fig. 11 is a schematic structural diagram of a vacuum evaporation system including a position sensor according to an embodiment of the present disclosure;
fig. 12 is a schematic view illustrating an angle limiting unit adjusting an evaporation range according to an embodiment of the present disclosure;
fig. 13 is a schematic structural diagram of a mask provided in an embodiment of the present application;
fig. 14 is a schematic structural diagram of a vacuum evaporation system including a supporting mechanism according to an embodiment of the present disclosure;
FIG. 15 is a schematic structural diagram of a support mechanism provided in an embodiment of the present application;
fig. 16 is a schematic structural diagram of another vacuum evaporation system according to an embodiment of the present disclosure;
fig. 17 is a schematic structural diagram of a vacuum evaporation system including a reflective baffle according to an embodiment of the present disclosure;
fig. 18 is a flowchart illustrating a vacuum evaporation method according to an embodiment of the present disclosure;
fig. 19 is another flow chart of a vacuum evaporation method according to an embodiment of the present disclosure;
fig. 20 is a flowchart illustrating a vacuum evaporation method according to an embodiment of the present application.
Detailed Description
As used in the specification and in the claims, certain terms are used to refer to particular components. As one skilled in the art will appreciate, manufacturers may refer to a component by different names. This specification and claims do not intend to distinguish between components that differ in name but not function. In the following description and in the claims, the terms "include" and "comprise" are used in an open-ended fashion, and thus should be interpreted to mean "include, but not limited to. "substantially" means within an acceptable error range, within which a person skilled in the art can solve the technical problem to substantially achieve the technical result. Furthermore, the term "coupled" is intended to encompass any direct or indirect electrical coupling. Thus, if a first device couples to a second device, that connection may be through a direct electrical coupling or through an indirect electrical coupling via other devices and couplings. The description which follows is a preferred embodiment of the present application, but is made for the purpose of illustrating the general principles of the application and not for the purpose of limiting the scope of the application. The protection scope of the present application shall be subject to the definitions of the appended claims. The same parts between the embodiments are not described in detail.
In the prior art, an evaporation process is generally called to be introduced to perform evaporation on a film layer in the manufacturing process of an organic electroluminescent display panel. When the film layer is evaporated, if a required film layer is formed by mixing a plurality of materials, for example, when a light-emitting layer is formed by evaporation, the host a and the guest B need to be evaporated together to form the light-emitting layer in which the host a and the guest B are uniformly mixed; alternatively, when depositing the hole injection layer, it is necessary to form the hole injection layer in which the hole transport material and the dopant are mixed by co-evaporation to mix the hole transport material and the dopant, as shown in fig. 1, fig. 1 is a schematic structural diagram of a conventional vacuum evaporation system 100 that performs evaporation under ideal conditions, fig. 2 is a schematic structural diagram of a film layer obtained by evaporation under ideal conditions in fig. 1, and in ideal conditions in fig. 1, a film layer 101 in which an evaporation material a and an evaporation material B are mixed uniformly is formed in a film formation effective region 11 on an evaporation substrate as shown in fig. 2.
However, when the conventional vacuum evaporation system 100 is used to jointly evaporate two or more evaporation sources containing different evaporation materials a and B, the evaporation materials a and B may have different film formation ranges, as shown in fig. 3, a schematic structural diagram of the vacuum evaporation system 100 in the prior art for evaporation film formation is shown, fig. 4 is a schematic structural diagram of a film layer obtained by evaporation under the evaporation condition of fig. 3, and referring to fig. 3 and 4, when the film formation range of the evaporation material a is larger than that of the evaporation material B, the ultra-thin a layer 12 may be formed outside the effective film formation region 11. In addition to the situations shown in fig. 3 and fig. 4, there may also occur that the film forming range of the evaporation material a is smaller than the film forming range of the evaporation material B, as shown in fig. 5, another structure diagram of the vacuum evaporation system 100 in the prior art for evaporation film formation is shown, and fig. 6 is a structure diagram of the film layer obtained by evaporation under the evaporation condition of fig. 5, please refer to fig. 5 and fig. 6, when the film forming range of the evaporation material a is smaller than the film forming range of the evaporation material B, the B ultra-thin layer 13 is formed outside the film forming effective region 11.
In view of this, the present application provides a vacuum evaporation system and a vacuum evaporation method, which adjust the evaporation range of various evaporation materials by driving the angle limiting unit to move by the first driving unit, so that various evaporation materials are completely overlapped on the evaporation surface, thereby avoiding the occurrence of an ultra-thin layer, and improving the device performance and the product yield.
Fig. 7 is a schematic structural diagram of a vacuum evaporation system 200 according to an embodiment of the present application, please refer to fig. 7, which provides a vacuum evaporation system 200, including:
a vapor deposition substrate 21, the vapor deposition substrate 21 including a vapor deposition surface 210;
a movable stage 22, wherein the movable stage 22 is provided with M evaporation sources 23 and M angle limiting units 24, wherein M is an integer greater than or equal to 2, and the evaporation surface 210 is the surface of the evaporation substrate 21 close to the evaporation source 23; the evaporation source 23 includes evaporation materials 25, and the evaporation materials 25 included in different evaporation sources 23 are different; the angle limiting unit 24 includes a first opening 241, and the first opening 241 is located between the evaporation source 23 and the evaporation substrate 21 in the direction perpendicular to the plane of the evaporation substrate 21; the evaporation range 201 of the evaporation material 25 on the evaporation substrate 21 is defined by the first opening 241;
at least one signal emission unit 26, wherein the signal emission unit 26 emits a first infrared signal 261 to the evaporation range 201, and the first infrared signal 261 forms a second infrared signal 271 after passing through the evaporation material 25;
at least one signal detection unit 27, wherein the signal detection unit 27 receives the second infrared signal 271 and analyzes the evaporation material 25 contained in the evaporation range 201 through the second infrared signal 271;
and a first driving unit 28, wherein the first driving unit 28 is electrically connected to the angle limiting unit 24, and when N types of vapor deposition materials 25 are contained in the vapor deposition range 201, the first driving unit 28 drives the angle limiting unit 24 to move, so as to adjust the vapor deposition range 201, wherein N is an integer smaller than M.
Specifically, referring to fig. 7, the vacuum evaporation system 200 provided by the present application includes an evaporation substrate 21 and a movable stage 22, a surface of the evaporation substrate 21 near the movable stage 22 is an evaporation surface 210, at least two evaporation sources 23 are disposed on the movable stage 22, evaporation materials 25 are disposed in the evaporation sources 23, and the evaporation materials 25 in each evaporation source 23 are different. The movable stage 22 is further provided with angle limiting units 24 corresponding to the evaporation sources 23 one by one, each angle limiting unit 24 includes a first opening 241, the first opening 241 is located between the evaporation source 23 and the evaporation substrate 21 in a direction perpendicular to the plane of the evaporation substrate 21, when evaporation is performed on the evaporation surface 210, the evaporation source 23 is heated to evaporate the evaporation material 25 in the evaporation source 23, the angle range of the evaporated evaporation material 25 is generally large, wherein the evaporation material 25 in a certain range reaches the evaporation substrate 21 through the first opening 241, the rest of the evaporation material 25 is blocked by the angle limiting units 24, and the evaporation range 201 of the evaporation material 25 on the evaporation substrate 21 is limited by the first opening 241, so that the size or the angle of the first opening 241 can be adjusted to adjust the evaporation range 201 of the evaporation material 25.
With continued reference to fig. 7, the vacuum evaporation system 200 provided by the present application further includes a first driving unit 28, at least one signal emitting unit 26, and at least one signal detecting unit 27, wherein the first driving unit 28 is electrically connected to the angle limiting unit 24, and the first driving unit 28 can drive the angle limiting unit 24 to move. In the evaporation process, the signal emitting unit 26 emits the first infrared signal 261 to the evaporation substrate 21, the evaporation material 25 is vaporized and then injected to the evaporation substrate 21, and when the first infrared signal 261 passes through the region of the vaporized evaporation material 25, different substance molecules contained in the evaporation material 25 absorb radiation signals of certain specific frequencies, so that light of the frequency in the first infrared signal 261 is attenuated, and an infrared absorption spectrum corresponding to the substance molecules contained in the evaporation material 25, that is, the second infrared signal 271, is formed. The signal detection unit 27 receives the second infrared signal 271, and obtains an infrared spectrum formed after passing through the evaporation material 25 according to the second infrared signal 271. Since the different molecules have different vibration modes, the infrared spectra of the different molecules are different from each other, and the evaporation material 25 included in the evaporation range 201 can be determined by acquiring the infrared spectrum of a known substance to form a standard infrared spectrum library and comparing the infrared spectrum formed after passing through the evaporation material 25 with the spectrum in the standard infrared spectrum library.
Since the vacuum vapor deposition system 200 of the present application includes M types of vapor deposition materials 25, when it is determined that M types of vapor deposition materials 25 are included in the vapor deposition region, it is not necessary to adjust the first opening 241 of the angle limiting unit 24 to indicate that all of the vapor deposition materials 25 can reach the region; when the type of the evaporation material 25 contained in the evaporation area is judged to be less than M, it is indicated that the evaporation material 25 which cannot reach the evaporation area exists, so that an ultrathin layer is formed in the area, the angle limiting unit 24 is adjusted to prevent the ultrathin layer from being formed, the angle limiting unit 24 is driven by the first driving unit 28 to move, the size or the angle of the first opening 241 is changed, the evaporation range 201 of the evaporation material 25 is changed, multiple evaporation materials 25 are completely overlapped on the evaporation surface 210, the ultrathin layer is avoided, and the device performance and the product yield are improved.
Fig. 7 shows a vacuum evaporation system 200 including two evaporation sources 23, assuming that the two evaporation sources 23 are a first evaporation source and a second evaporation source, respectively, the first evaporation source includes an evaporation material a, the second evaporation source includes an evaporation material B, as shown in fig. 8, fig. 8 shows a schematic diagram of an adjustment of an evaporation range 201 of the vacuum evaporation system 200 according to the embodiment of the present application, referring to fig. 8, when it is determined that only the evaporation material a is included in an evaporation region 211, a first driving unit 28 drives an angle limiting unit 24 corresponding to the evaporation material a to move, adjusts a size of a first opening 241, reduces the evaporation range 201 of the evaporation material a by a blocking effect of the angle limiting unit 24 on the evaporation material a, as shown in a right edge of fig. 8, adjusts a position of the evaporation range 201 of the evaporation material a along a solid line to a position directed to a dotted line, so that the evaporation material a and the evaporation material B completely overlap each other, the formation of an A ultrathin layer is avoided, and the performance of the device and the yield of products are improved. When it is determined that the evaporation region 212 only contains the evaporation material B, the first driving unit 28 drives the angle limiting unit 24 corresponding to the evaporation material B to move, and adjusts the size of the first opening 241, so as to reduce the evaporation range 201 of the evaporation material B by the blocking effect of the angle limiting unit 24 on the evaporation material B, for example, at the left edge in fig. 8, the position of the evaporation range 201 of the evaporation material B pointed along the solid line is adjusted to the position pointed by the dotted line, so that the evaporation material a and the evaporation material B are completely overlapped, thereby avoiding the formation of a B ultrathin layer, and improving the device performance and the product yield.
Of course, when it is determined that an ultra-thin layer exists, the formation of the ultra-thin layer may be avoided by expanding the evaporation range of another evaporation material, in addition to reducing the evaporation range of a material for forming the ultra-thin layer, for example, in fig. 8, when it is determined that only the evaporation material a is contained in the evaporation region 211, the first driving unit 28 drives the angle limiting unit 24 corresponding to the evaporation material B to move, and adjusts the size of the first opening 241, so that the evaporation range 201 of the evaporation material B is expanded to the right side, thereby completely overlapping the evaporation material a and the evaporation material B, avoiding the formation of the ultra-thin layer a, and improving the device performance and the product yield. Similarly, when the B-type ultrathin layer is judged to appear, the evaporation material A and the evaporation material B can be completely overlapped by a method for expanding the evaporation range of the evaporation material A, the B-type ultrathin layer is prevented from being formed, and the performance of a device and the yield of products are improved.
Fig. 7 and 8 are for schematically illustrating the structure of the vacuum vapor deposition system 200, and do not represent the actual size, thickness, and the like of the vapor deposition substrate 21; nor represent the actual positional relationship between the evaporation sources 23, or between the evaporation source 23 and the vapor deposition substrate 21. The angle limiting unit 24 and the first driving unit 28 shown in fig. 7 and 8 are also only schematic illustrations and are not intended to limit the structure of the angle limiting unit 24 and the position of the first driving unit 28, and in different embodiments, the first driving unit 28 may be disposed at different positions according to specific structures as long as the electrical connection between the first driving unit 28 and the angle limiting unit 24 is ensured, and a plurality of angle limiting units 24 may share one first driving unit 28, and the first driving unit 28 is electrically connected to each angle limiting unit 24.
Note that the vacuum vapor deposition system 200 including two evaporation sources 23 is only one exemplary illustration in the embodiment shown in fig. 7, and in other embodiments, the vacuum vapor deposition system 200 may include three or more evaporation sources 23, which is not particularly limited in the present application. Fig. 9 is a schematic structural diagram of a vacuum evaporation system 200 including three evaporation sources 23 according to an embodiment of the present application, please refer to fig. 9, in the embodiment shown in fig. 9, the vacuum evaporation system 200 includes three evaporation sources 23, and an evaporation process thereof is the same as the above-mentioned evaporation process, and is not repeated here. The evaporation material 25 may be an organic material, a metal material, or an inorganic material, and is specifically set according to the film layer to be evaporated, which is not limited in the present application, and the evaporation temperature of each evaporation source is different according to the difference of the evaporation material 25, for example, when the evaporation material 25 is an organic material, the evaporation temperature may be set to 150 ℃ to 350 ℃, when the evaporation material 25 is a metal material, the evaporation temperature may be set to 400 ℃ to 1200 ℃, and during the actual evaporation process, the evaporation temperature may be specifically set according to the difference of the evaporation rate.
As shown in fig. 7, the vacuum evaporation system 200 provided in the present application is located in a vacuum chamber 202 to ensure that the vacuum evaporation system 200 operates under vacuum conditions, but it should be noted that the vacuum chamber 202 shown in fig. 7 is only for schematically illustrating that the vacuum evaporation system 200 is located in the vacuum chamber 202 and does not represent the actual shape, size, etc. of the vacuum chamber 202. Also, the signal emitting unit 26 and the signal detecting unit 27 shown in fig. 7 do not represent actual positions, structures, etc., and in practical applications, the signal emitting unit 26 and the signal detecting unit 27 may be disposed at other positions, but when the signal emitting unit 26 and the signal detecting unit 27 are disposed, it is necessary to ensure that the first infrared signal 261 can reach the deposition surface 210 and the signal detecting unit 27 can receive the second infrared signal 271. Further, in order to fix the signal emitting unit 26 and the signal detecting unit 27, a support table may be provided in the vacuum chamber 202, and the signal emitting unit 26 and the signal detecting unit 27 may be placed on the support table to fix the signal emitting unit 26 and the signal detecting unit 27.
Optionally, fig. 10 is a schematic structural diagram of a vacuum evaporation system 200 including a second driving unit 29 according to an embodiment of the present application, and referring to fig. 10, the vacuum evaporation system 200 according to the embodiment of the present application further includes: and a second driving unit 29, wherein the second driving unit 29 is electrically connected to the moving stage 22, and the second driving unit 29 drives the moving stage 22 to move in the first direction. Specifically, referring to fig. 10, in the vacuum evaporation system 200 of the present embodiment, a second driving unit 29 is further provided, and the moving stage 22 is electrically connected to the second driving unit 29, where the second driving unit 29 may be, for example, a motor, and when the area of the evaporation substrate 21 is large, the evaporation source 23 is at a fixed position, and evaporation on the entire evaporation surface 210 cannot be completed, therefore, in the present embodiment, the moving stage 22 is driven by the motor to move left and right along a first direction, where the first direction refers to the arrangement direction of the plurality of evaporation sources 23, and by moving the moving stage left and right along the arrangement direction of the plurality of evaporation sources 23, evaporation on the entire evaporation surface 210 on the evaporation substrate 21 is realized, thereby avoiding the problem that a partial area cannot be evaporated, and being beneficial to improving evaporation efficiency.
It should be noted that the second driving unit 29 shown in fig. 10 is only a schematic illustration, and does not represent the actual position and specific structure of the second driving unit 29, and in practical applications, the position of the second driving unit 29 may be set according to the structure of the vacuum evaporation system 200, which is not limited in the present application. The connection between the second drive unit 29 and the moving stage 22 in fig. 10 is only for the purpose of describing the electrical connection between the moving stage 22 and the second drive unit 29, and does not represent an actual connection between the two.
Optionally, fig. 11 is a schematic structural diagram of a vacuum evaporation system 200 including a position sensor 30 according to an embodiment of the present disclosure, please refer to fig. 11, where the vacuum evaporation system 200 according to the embodiment of the present disclosure further includes: a position sensor 30, the position sensor 30 being located on a side of the deposition substrate 21 away from the movable stage 22; the position sensor 30 detects the position of the first infrared signal 261 on the plane of the vapor deposition substrate 21. Specifically, referring to fig. 11, the vacuum evaporation system 200 in the present embodiment further includes a position sensor 30, the position sensor 30 is located on a side of the evaporation substrate 21 away from the moving stage 22, and normally, when the film formation effective area reaches the edge position of the evaporation substrate 21, the problem of the ultra-thin layer is relatively easy to occur, so that in the present embodiment, the position sensor 30 detects the position of the first infrared signal 261, and determines whether the first infrared signal 261 is ejected to a position where the evaporation substrate 21 needs to be detected, that is, whether the first infrared signal 261 is ejected to the edge of the evaporation substrate 21.
When the first infrared signal 261 is injected to the outside of the edge of the evaporation substrate 21 and there is no evaporation material 25 at the position, it indicates that the position does not fall within the evaporation range 201, and the emission angle of the signal emission unit 26 needs to be adjusted, and in the viewing angle shown in fig. 11, the emission angle of the signal emission unit 26 is rotated to the right, so that the first infrared signal 261 can reach the edge of the evaporation substrate 21, and the edge of the evaporation substrate 21 is detected. When the first infrared signal 261 is injected to the middle of the evaporation substrate 21, and the position contains M evaporation materials 25, it indicates that there is no ultrathin layer at the position, and therefore, the emission angle of the signal emission unit 26 needs to be adjusted, and the emission angle of the signal emission unit 26 is rotated to the left in the viewing angle shown in fig. 11, so that the first infrared signal 261 can reach the edge of the evaporation substrate 21, and the edge of the evaporation substrate 21 can be detected, and formation of an ultrathin layer at the edge of the evaporation substrate 21 is avoided, and by detecting the position of the first infrared signal 261 with the position sensor 30, the emission unit can emit the first infrared signal 261 only at the edge position where the ultrathin layer is relatively easily formed, so that the signal detection unit 27 only needs to analyze the evaporation materials 25 at the edge region, and thus the workload of the signal detection unit 27 can be effectively reduced, the working efficiency is improved.
It should be noted that fig. 11 is only a schematic illustration of the position sensor 30, and does not represent an actual position and structure of the position sensor 30, and in other embodiments, the position sensor 30 may be disposed at another position, or the position sensor 30 may be integrated in the signal transmitting unit 26, which is not limited in this application.
Optionally, fig. 12 is a schematic diagram illustrating that the angle limiting unit 24 adjusts the evaporation range 201 according to the embodiment of the present application, please refer to fig. 12, where the angle limiting unit 24 includes a bottom 242, two side portions 243, and at least one angle limiting portion 244, and an orthogonal projection of the angle limiting portion 244 on a plane where the bottom 242 is located within a range defined by the bottom 242; the first driving unit 28 drives the angle limiting portion 244 and/or the side portion 243 to move to adjust the evaporation range 201.
Specifically, referring to fig. 12, the angle limiting unit 24 includes a bottom 242, two side portions 243, and at least one angle limiting portion 244, the two side portions 243 are connected to the bottom 242, the angle limiting portion 244 is connected to one of the side portions 243, a first opening 241 is formed between the angle limiting part 244 and the other side part 243, and the evaporated part of the vapor deposition material 25 reaches the vapor deposition substrate 21 through the first opening 241, while the remaining evaporation material 25 is blocked by the angle limiting portion 244 and the side portion 243, in the view shown in fig. 12, when the signal detection unit 27 detects that the ultra-thin a layer exists in the evaporation region 212 of the evaporation substrate 21, the first driving unit 28 drives the angle limiting portion 244 to extend along the right side, and the evaporation range 201 of the evaporation material a retracts rightward, so that the evaporation material a and the evaporation material B are overlapped, an ultrathin layer A is prevented from being formed, and the device performance and the product yield are improved. When the signal detection unit 27 detects that the ultra-thin layer a exists in the evaporation region 211 of the evaporation substrate 21, the first driving unit 28 drives the side portion 243 which is not connected with the angle limiting portion 244 to extend upwards, and the evaporation range 201 of the evaporation material a retracts leftwards, so that the evaporation material a and the evaporation material B are overlapped, the ultra-thin layer a is prevented from being formed, and the device performance and the product yield are improved.
When the B ultra thin layer is present, the angle limiting unit 24 moves in a manner similar to that when the a ultra thin layer is present, and thus, a detailed description thereof will be omitted.
Optionally, fig. 13 is a schematic structural diagram of the mask 31 provided in the embodiment of the present application, please refer to fig. 7 and 13, and the vacuum evaporation system 200 provided in the embodiment of the present application further includes: the mask plate 31, the mask plate 31 is located on the evaporation surface 210 of the evaporation substrate 21; mask 31 includes a plurality of second openings 311, and evaporation material 25 is deposited at the positions of second openings 311. Specifically, referring to fig. 7 and 13, in the present embodiment, a mask plate 31 is further disposed on the evaporation surface 210, the mask plate 31 includes a plurality of second openings 311, and the evaporation surface 210 of the evaporation substrate 21 is exposed by the plurality of second openings 311, so that, in the evaporation process, the evaporated material 25 after being vaporized reaches the evaporation surface 210 through the second openings 311 and is deposited at the second openings 311 to form a patterned evaporation film layer.
It should be noted that fig. 7 and fig. 13 are only for explaining that the mask plate 31 includes the second openings 311, and do not represent actual number, size, shape, arrangement mode, and the like of the second openings 311, and in an actual manufacturing process, specific arrangement, size, shape, and the like of the second openings 311 on the mask plate 31 may be set according to needs, which is not limited in this application.
Optionally, fig. 14 is a schematic structural diagram of a vacuum evaporation system 200 including a supporting mechanism 32 according to an embodiment of the present application, and fig. 15 is a schematic structural diagram of the supporting mechanism 32 according to the embodiment of the present application, please refer to fig. 14 and fig. 15, where the vacuum evaporation system 200 according to the embodiment of the present application further includes: the supporting mechanism 32, the supporting mechanism 32 is fixed in the vacuum evaporation system 200, and the supporting mechanism 32 is located on one side of the mask plate 31 close to the moving stage 22; the supporting mechanism 32 comprises a hollow part 321 and a supporting part 322 surrounding the hollow part 321, wherein the orthographic projection of the hollow part 321 on the plane of the supporting mechanism 32 is positioned in the range defined by the orthographic projection of the mask plate 31 on the plane of the supporting mechanism 32; the support portion 322 is used to support the mask 31.
Specifically, referring to fig. 14 and fig. 15, in order to fix the evaporation substrate 21, in the present embodiment, a supporting mechanism 32 is provided, and the supporting mechanism 32 is fixed in the vacuum evaporation system 200, the supporting mechanism 32 is located at a side of the mask plate 31 close to the moving stage 22, and the supporting mechanism 32 includes a hollow portion 321 and a supporting portion 322 surrounding the hollow portion 321, wherein an orthographic projection of the hollow portion 321 on a plane where the supporting mechanism 32 is located within an orthographic projection range of the mask plate 31 on a plane where the supporting mechanism 32 is located, that is, an area of the mask plate 31 is larger than an area of the hollow portion 321, so that an overlapping portion exists between the supporting portion 322 and the mask plate 31, the supporting portion 322 supports the mask plate 31, and the evaporation substrate 21 is located at a side of the mask plate 31 away from the supporting mechanism 32, so that the evaporation substrate 31 supports the evaporation substrate 21, and can fix the evaporation substrate 21, and film evaporation is realized.
It should be noted that fig. 14 and 15 are only schematic illustrations of the structure of the supporting mechanism 32, and do not represent the actual shape and size of the supporting mechanism 32, and the size and shape of the hollow portion 321 in the supporting mechanism 32 may be set according to the size and shape of the mask plate 31, which is not limited in the present application.
Optionally, fig. 16 is a schematic view of another structure of the vacuum evaporation system 200 according to the embodiment of the present application, please refer to fig. 16, in which the signal emitting unit 26 includes a first signal emitting unit 262 and a second signal emitting unit 263, and the first signal emitting unit 262 and the second signal emitting unit 263 are located on one side of the evaporation substrate 21 close to the movable stage 22; in the first direction, the first signal transmitting unit 262 and the second signal transmitting unit 263 are respectively located on two opposite sides of the mobile carrier 22.
Specifically, referring to fig. 16, when the evaporation substrate 21 has a large area, the movable stage 22 needs to move along the first direction to ensure that the evaporation coating layer can be formed on the entire evaporation surface 210. Thus, both side edges of the evaporation substrate 21 may form an ultra-thin layer, therefore, in the present embodiment, two signal emitting units 26 are disposed in the vacuum evaporation system 200, which are respectively the first signal emitting unit 262 and the second signal emitting unit 263, and along the first direction, the first signal emitting unit 262 and the second signal emitting unit 263 are respectively located on two opposite sides of the movable stage 22, when the evaporation material 25 ejected from the evaporation source 23 can reach the left side edge of the evaporation substrate 21, the first infrared signal 261 is emitted to the left side edge of the evaporation substrate 21 through the first signal emitting unit 262, so as to detect the left side edge of the evaporation substrate 21, and prevent the left side edge from forming an ultra-thin layer. When the evaporation material 25 ejected from the evaporation source 23 can reach the right edge of the evaporation substrate 21, the second signal emitting unit 263 emits the first infrared signal 261 to the right edge of the evaporation substrate 21, so as to detect the right edge of the evaporation substrate 21 and prevent the formation of an ultra-thin layer on the right edge. This embodiment all sets up signal emission unit 26 through the both sides at evaporation plating base plate 21, can all detect evaporation plating base plate 21's both sides for multiple coating by vaporization material 25 all coincides completely at evaporation plating base plate 21's both sides edge, is favorable to further improving device performance and product yield.
Optionally, referring to fig. 16, the signal detection unit 27 includes a first signal detection unit 272 and a second signal detection unit 273, and the first signal detection unit 272 and the second signal detection unit 273 are located at one side of the evaporation substrate 21 close to the moving stage 22; in the first direction, the first signal detection unit 272 and the second signal detection unit 273 are respectively located on two opposite sides of the moving stage 22.
Specifically, referring to fig. 16, when the signal emitting units 26 are disposed on both sides of the evaporation substrate 21, the second infrared signals 271 are formed on both left and right sides of the evaporation substrate 21, in order to accurately receive the second infrared signals 271 on both sides, the signal detecting unit 27 in this embodiment includes a first signal detecting unit 272 and a second signal detecting unit 273, wherein the first signal detecting unit 272 and the first signal emitting unit 262 are located on the same side, the second signal detecting unit 273 and the second signal emitting unit 263 are located on the same side, the first signal detecting unit 272 is configured to receive the second infrared signal 271 on the left side, analyze the evaporation material 25 on the left side edge of the evaporation substrate 21, determine the evaporation material 25 contained on the left side edge, the second signal detecting unit 273 is configured to receive the second infrared signal 271 on the right side, analyze the evaporation material 25 on the right side edge of the evaporation substrate 21, the vapor deposition material 25 included at the right edge is determined. In this embodiment, the signal detection units 27 corresponding to the signal emission units 26 are respectively provided on the left and right sides of the deposition substrate 21, and the deposition materials 25 included in the edges on the left and right sides of the deposition substrate 21 are analyzed by the first signal detection unit 272 and the second signal detection unit 273, so that it is possible to avoid the problem that the second infrared signal 271 on the other side cannot be received or the second infrared signals 271 on the left and right sides cannot be distinguished when the signal detection unit 27 is provided only on one side, and thus the detection accuracy can be improved.
Optionally, referring to fig. 16, the vacuum evaporation system 200 provided in the embodiment of the present application further includes: a first reflection unit 331 and a second reflection unit 332, wherein the first reflection unit 331 and the second reflection unit 332 are fixed on the surface of the support part 322 close to the moving stage 22; the first and second reflection units 331 and 332 are respectively located at opposite sides of the hollow 321 in the first direction; the first reflection unit 331 includes a first reflection surface 333, and the first signal emission unit 262 and the first signal detection unit 272 are both located on a side of the first reflection surface 333 away from the evaporation substrate 21; the second reflection unit 332 includes a second reflection surface 334, and the second signal emission unit 263 and the second signal detection unit 273 are both located on a side of the second reflection surface 334 away from the evaporation substrate 21.
Specifically, referring to fig. 16, in the present embodiment, a reflection unit is disposed in the vacuum evaporation system 200, and the second infrared signal 271 is reflected to the signal detection unit 27 by the reflection unit. When the signal detection units 27 are disposed on both the left and right sides of the vacuum evaporation system 200, in order to allow the first signal detection unit 272 and the second signal detection unit 273 to receive the second infrared signals 271 on both the left and right sides, the first reflection unit 331 and the second reflection unit 332 are provided on both left and right sides of the vacuum evaporation system 200, the first reflection unit 331 reflects the left second infrared signal 271 to the first signal detection unit 272, the second reflection unit 332 reflects the right second infrared signal 271 to the second signal detection unit 273, the first signal detection unit 272 and the second signal detection unit 273 analyze the evaporation materials 25 contained in the left and right edges of the evaporation substrate 21, and the angle limiting unit 24 is driven to move according to the analysis result, so that the edges of the evaporation materials 25 on the two sides of the evaporation substrate 21 are completely overlapped, and the device performance and the product yield are further improved.
It should be noted that the reflection unit in fig. 16 is only a schematic illustration, and does not represent the actual position, structure, etc. of the reflection unit, and in practical application, the reflection unit may also be a structure embedded in the support mechanism 32, so that the reflection unit protrudes out of the support mechanism 32 to reflect signals when the system is in operation, and the reflection unit can be embedded in the support mechanism 32 when the system is not in operation, so as to protect the reflection unit to a certain extent.
Optionally, fig. 17 is a schematic structural diagram of a vacuum evaporation system 200 including a reflective baffle according to an embodiment of the present application, please refer to fig. 17, where the vacuum evaporation system 200 according to the embodiment of the present application further includes: a first reflective baffle 341 and a second reflective baffle 342, an orthographic projection of the first reflective baffle 341 on a plane on which the first reflective surface 333 is located covering the first reflective surface 333; an orthographic projection of the second reflective baffle 342 onto the plane of the second reflective surface 334 covers the second reflective surface 334. Specifically, referring to fig. 17, when the vacuum evaporation system 200 is provided with a reflection unit, in order to protect the reflection unit, reflection baffles, such as a first reflection baffle 341 and a second reflection baffle 342, may be further provided in one-to-one correspondence with the reflection unit. Therefore, when the vacuum evaporation system 200 does not work, the reflecting surface of the reflecting unit is shielded by the reflecting baffle plate, the reflecting unit is prevented from being damaged due to long-term pollution of the reflecting surface, and the service life of the reflecting unit is prolonged.
Alternatively, referring to fig. 7, the first driving unit 28 is a stepping motor. Specifically, referring to fig. 7, since the rotation speed of the stepping motor is not affected by the load and the control is convenient, the stepping motor is selected as the first driving unit 28 in the present embodiment. The stepping motor is an open-loop control element which converts an electric pulse signal into angular displacement or linear displacement, the stepping driver receives a pulse signal, the stepping motor can be driven to rotate by a fixed angle according to a set direction, and when the angle limiting unit 24 is driven to move, the angular displacement can be controlled by controlling the number of pulses, so that the aim of accurate positioning is fulfilled.
Based on the same inventive concept, the present application further provides a vacuum evaporation method, fig. 18 is a flowchart of the vacuum evaporation method provided in the embodiment of the present application, please refer to fig. 7 and 18, and the vacuum evaporation method provided in the present application includes:
step 01: providing a vapor deposition substrate 21, wherein the vapor deposition substrate 21 comprises a vapor deposition surface 210;
step 02: providing a movable stage 22, and arranging M evaporation sources 23 and M angle limiting units 24 on the movable stage 22, wherein M is an integer greater than or equal to 2, and the evaporation surface 210 is the surface of the evaporation substrate 21 close to the evaporation sources 23; the evaporation source 23 includes evaporation materials 25, and the evaporation materials 25 included in different evaporation sources 23 are different; the angle limiting unit 24 includes a first opening 241, and the first opening 241 is located between the evaporation source 23 and the evaporation substrate 21 in the direction perpendicular to the plane of the evaporation substrate 21; the evaporation range 201 of the evaporation material 25 on the evaporation substrate 21 is defined by the first opening 241;
step 03: arranging at least one signal emission unit 26, wherein the signal emission unit 26 emits a first infrared signal 261, and the first infrared signal 261 forms a second infrared signal 271 after passing through the evaporation material 25;
step 04: at least one signal detection unit 27 is arranged, the signal detection unit 27 receives the second infrared signal 271, and the evaporation materials 25 contained in the evaporation range 201 are analyzed through the second infrared signal 271;
step 05: the first driving unit 28 is provided, the first driving unit 28 is electrically connected to the angle limiting unit 24, and when N types of vapor deposition materials 25 are contained in the vapor deposition range 201, the first driving unit 28 drives the angle limiting unit 24 to move, so as to adjust the vapor deposition range 201, wherein N is an integer smaller than M.
Specifically, in fig. 7 and 18, in the vacuum evaporation method provided in the embodiment of the present application, an evaporation substrate 21 including an evaporation surface 210 is provided in step 01, a movable stage 22 is provided in step 02, the evaporation surface 210 is made to face the movable stage 22, M evaporation sources 23 and M angle limiting units 24 are provided on the movable stage 22, where M is an integer greater than or equal to 2, evaporation materials 25 are provided in the evaporation sources 23, and the evaporation materials 25 in the evaporation sources 23 are different, angle limiting units 24 corresponding to the evaporation sources 23 one by one are further provided on the movable stage 22, the angle limiting units 24 include first openings 241, the first openings 241 are located between the evaporation sources 23 and the evaporation substrate 21 in a direction perpendicular to a plane in which the evaporation substrate 21 is located, when evaporation is performed on the evaporation surface 210, the evaporation sources 23 are heated to vaporize the evaporation materials 25 in the evaporation sources 23, the angle range in which the vaporized vapor deposition material 25 is injected is generally large, and the vapor deposition range 201 of the vapor deposition material 25 can be adjusted by adjusting the size or angle of the first opening 241 because the vapor deposition material 25 in a certain range reaches the vapor deposition substrate 21 through the first opening 241, the remaining vapor deposition material 25 is blocked by the angle limiting unit 24, and the vapor deposition range 201 of the vapor deposition material 25 on the vapor deposition substrate 21 is limited by the first opening 241.
With continued reference to fig. 7 and 18, after the movable stage 22 is set, at least one signal emitting unit 26 is set in step 03, the signal emitting unit 26 emits a first infrared signal 261 to the evaporation substrate 21, the evaporation material 25 is vaporized and then sprayed to the evaporation substrate 21, and when the first infrared signal 261 passes through the region of the vaporized evaporation material 25, the evaporation material 25 absorbs a radiation signal of a certain frequency, so that the light of the frequency in the first infrared signal 261 is attenuated to form a second infrared signal 271. Then, at least one signal detection unit 27 is set in step 04, the signal detection unit 27 receives the second infrared signal 271 generated in step 03, obtains an infrared spectrum formed after passing through the evaporation material 25 according to the second infrared signal 271, and compares the infrared spectrum with a spectrum in a standard infrared spectrum library, so as to determine the evaporation material 25 contained in the evaporation range 201.
By providing the first driving unit 28 in step 05 and electrically connecting the first driving unit 28 and the angle limiting unit 24, since the vacuum vapor deposition system 200 of the present application includes M types of vapor deposition materials 25, when it is determined that M types of vapor deposition materials 25 are included in the vapor deposition region, it is not necessary to adjust the first opening 241 of the angle limiting unit 24 to indicate that all the vapor deposition materials 25 can reach the region; when the type of the evaporation material 25 contained in the evaporation area is judged to be less than M, it is indicated that the evaporation material 25 which cannot reach the evaporation area exists, so that an ultrathin layer is formed in the area, the angle limiting unit 24 is adjusted to prevent the ultrathin layer from being formed, the angle limiting unit 24 is driven by the first driving unit 28 to move, the size or the angle of the first opening 241 is changed, the evaporation range 201 of the evaporation material 25 is changed, multiple evaporation materials 25 are completely overlapped on the evaporation surface 210, the ultrathin layer is avoided, and the device performance and the product yield are improved.
Optionally, fig. 19 is another flowchart of the vacuum evaporation method according to the embodiment of the present application, please refer to fig. 11 and fig. 19, where the vacuum evaporation method according to the embodiment of the present application further includes step 06: a position sensor 30 is provided on the side of the deposition substrate 21 away from the movable stage 22; the position sensor 30 detects a position of the first infrared signal 261 on the plane where the evaporation substrate 21 is located, and sends the detected position information to the signal emitting unit 26, and the signal emitting unit 26 adjusts an emitting angle according to the position information, specifically: if the first infrared signal 261 does not contain the evaporation material 25 or contains M kinds of evaporation materials 25 at the position on the plane where the evaporation substrate 21 is located, the signal emission unit 26 adjusts the emission angle so that the first infrared signal 261 is emitted to the edge of the evaporation substrate 21 near one side of the emission unit.
Specifically, referring to fig. 11 and fig. 19, after the signal emitting unit 26 is installed, the position sensor 30 is further installed on the side of the evaporation substrate 21 away from the moving stage 22 in step 06, and in a normal case, when the film formation effective area reaches the edge position of the evaporation substrate 21, the problem of the ultra-thin layer is relatively easy to occur, so that in this embodiment, the position of the first infrared signal 261 is detected by the position sensor 30, and it is determined whether the first infrared signal 261 is ejected to the position of the evaporation substrate 21, which needs to be detected, that is, whether the first infrared signal 261 is ejected to the edge of the evaporation substrate 21.
When the first infrared signal 261 is injected to the outside of the edge of the evaporation substrate 21 and there is no evaporation material 25 at the position, it indicates that the position does not fall within the film formation range, and it is necessary to adjust the emission angle of the signal emission unit 26, and in the viewing angle shown in fig. 11, the emission angle of the signal emission unit 26 is rotated to the right, so that the first infrared signal 261 can reach the edge of the evaporation substrate 21, and the edge of the evaporation substrate 21 is detected. When the first infrared signal 261 is injected to the middle of the evaporation substrate 21, and the position contains M evaporation materials 25, it indicates that there is no ultrathin layer at the position, and therefore, the emission angle of the signal emission unit 26 needs to be adjusted, and the emission angle of the signal emission unit 26 is rotated to the left in the viewing angle shown in fig. 11, so that the first infrared signal 261 can reach the edge of the evaporation substrate 21, and the edge of the evaporation substrate 21 can be detected, and formation of an ultrathin layer at the edge of the evaporation substrate 21 is avoided, and by detecting the position of the first infrared signal 261 with the position sensor 30, the emission unit can emit the first infrared signal 261 only at the edge position where an ultrathin region is relatively easily formed, so that the signal detection unit 27 only needs to analyze the evaporation materials 25 at the edge region, and thus the workload of the signal detection unit 27 can be effectively reduced, the working efficiency is improved.
Optionally, fig. 20 is a flowchart illustrating another vacuum evaporation method according to an embodiment of the present application, and referring to fig. 11, fig. 16, and fig. 20, the vacuum evaporation method according to the embodiment of the present application further includes step 07: a reflection unit is provided, the reflection unit includes a reflection surface, when the signal emission unit 26 adjusts the emission angle, the reflection unit adjusts the reflection angle, and the signal detection unit 27 receives the second infrared signal 271 reflected by the reflection surface.
Specifically, referring to fig. 11, fig. 16 and fig. 20, in the present embodiment, a reflection unit is disposed in the vacuum evaporation system 200 through step 07, such as the first reflecting unit 331 and the second reflecting unit 332, which include reflecting surfaces, the second infrared signal 271 is reflected to the signal detecting unit 27 through the reflecting surfaces, when the signal emitting unit 26 adjusts the emitting angle, the position of the second infrared signal 271 on the evaporation substrate 21 changes, in order to ensure that the reflection unit can reflect the second infrared signal 271 to the signal detection unit 27, the reflection angle of the reflection unit needs to be adjusted so that the signal detection unit 27 can receive the second infrared signal 271 reflected by the reflection surface, the evaporation material 25 contained in the area is analyzed through the second infrared signal 271, so that the evaporation surface 210 is effectively monitored, an ultrathin layer is prevented from being formed, and the performance of the device and the yield of products are improved.
According to the embodiments, the application has the following beneficial effects:
the invention provides a vacuum evaporation system and a vacuum evaporation method, which comprise M evaporation sources, wherein M is an integer larger than or equal to 2, evaporation materials in different evaporation sources are different, in the evaporation process, a signal transmitting unit transmits a first infrared signal to an evaporation substrate, the first infrared signal is absorbed by the evaporation materials to form a second infrared signal, a detector receives the second infrared signal and analyzes the evaporation materials contained in the evaporation range through the spectrum of the second infrared signal, and when the types of the evaporation materials contained in the evaporation range are smaller than M, a first driving unit drives an angle limiting unit to move, so that the evaporation range is adjusted through a first opening, the evaporation materials in M are completely overlapped on an evaporation surface, an ultrathin layer is avoided, and the performance and the yield of devices are improved.
The foregoing description shows and describes several preferred embodiments of the present application, but as aforementioned, it is to be understood that the application is not limited to the forms disclosed herein, but is not to be construed as excluding other embodiments and is capable of use in various other combinations, modifications, and environments and is capable of changes within the scope of the inventive concept as expressed herein, commensurate with the above teachings, or the skill or knowledge of the relevant art. And that modifications and variations may be effected by those skilled in the art without departing from the spirit and scope of the application, which is to be protected by the claims appended hereto.
Claims (15)
1. A vacuum evaporation system, comprising:
the vapor deposition substrate comprises a vapor deposition surface;
the evaporation device comprises a movable carrying platform, wherein M evaporation sources and M angle limiting units are arranged on the movable carrying platform, M is an integer greater than or equal to 2, and the evaporation surface is the surface of the evaporation substrate close to the evaporation sources; the evaporation source comprises evaporation materials, and the evaporation materials contained in different evaporation sources are different; the angle limiting unit comprises a first opening, and the first opening is positioned between the evaporation source and the evaporation substrate in a direction perpendicular to the plane of the evaporation substrate; the evaporation range of the evaporation material on the evaporation substrate is limited by the first opening;
the signal transmitting unit transmits a first infrared signal to the evaporation coating range, and the first infrared signal forms a second infrared signal after passing through an evaporation coating material;
at least one signal detection unit, wherein the signal detection unit receives the second infrared signal and analyzes the evaporation material contained in the evaporation range through the second infrared signal;
the first driving unit is electrically connected with the angle limiting unit, and when N evaporation materials are contained in the evaporation range, the angle limiting unit is driven to move through the first driving unit to adjust the evaporation range, wherein N is an integer smaller than M.
2. A vacuum evaporation system according to claim 1, further comprising:
and the second driving unit is electrically connected with the movable carrier and drives the movable carrier to move along a first direction.
3. A vacuum evaporation system according to claim 2, further comprising:
the position sensor is positioned on one side of the evaporation substrate, which is far away from the moving carrier;
the position sensor detects the position of the first infrared signal on the plane of the evaporation substrate.
4. The vacuum evaporation system according to claim 1, wherein the angle limiting unit comprises a bottom part, two side parts and at least one angle limiting part, and an orthographic projection of the angle limiting part on a plane of the bottom part is positioned in a range limited by the bottom part; the first driving unit drives the angle limiting part and/or the side part to move to adjust the evaporation range.
5. A vacuum evaporation system according to claim 1, further comprising:
the mask plate is positioned on the evaporation surface of the evaporation substrate; the mask plate comprises a plurality of second openings, and the evaporation materials are deposited at the positions of the second openings.
6. A vacuum evaporation system according to claim 1, further comprising:
the supporting mechanism is fixed in the vacuum evaporation system and is positioned on one side, close to the moving carrier, of the mask plate; the supporting mechanism comprises a hollow part and a supporting part surrounding the hollow part, and the orthographic projection of the hollow part on the plane of the supporting mechanism is positioned in a range limited by the orthographic projection of the mask plate on the plane of the supporting mechanism; the supporting part is used for supporting the mask plate.
7. A vacuum evaporation system according to claim 6,
the signal emission unit comprises a first signal emission unit and a second signal emission unit, and the first signal emission unit and the second signal emission unit are positioned on one side of the evaporation substrate close to the moving carrier; along a first direction, the first signal transmitting unit and the second signal transmitting unit are respectively positioned at two opposite sides of the mobile carrying platform.
8. A vacuum evaporation system according to claim 7,
the signal detection unit comprises a first signal detection unit and a second signal detection unit, and the first signal detection unit and the second signal detection unit are positioned on one side of the evaporation substrate close to the moving carrier; along a first direction, the first signal detection unit and the second signal detection unit are respectively positioned at two opposite sides of the mobile carrier.
9. A vacuum evaporation system according to claim 8, further comprising:
the first reflection unit and the second reflection unit are fixed on the surface, close to the moving carrier, of the support part; in a first direction, the first reflection unit and the second reflection unit are respectively positioned at two opposite sides of the hollowed part;
the first reflection unit comprises a first reflection surface, and the first signal emission unit and the first signal detection unit are both positioned on one side of the first reflection surface, which is far away from the evaporation substrate;
the second reflection unit comprises a second reflection surface, and the second signal emission unit and the second signal detection unit are both positioned on one side of the second reflection surface, which is far away from the evaporation substrate.
10. A vacuum evaporation system according to claim 9, further comprising:
the orthographic projection of the first reflecting baffle on the plane where the first reflecting surface is located covers the first reflecting surface; the orthographic projection of the second reflecting baffle on the plane of the second reflecting surface covers the second reflecting surface.
11. A vacuum evaporation system according to claim 1,
the evaporation material is at least one of a metal material, an organic material or an inorganic material.
12. The vacuum evaporation system of claim 1, wherein the first driving unit is a stepper motor.
13. A vacuum evaporation method is characterized by comprising the following steps:
providing an evaporation substrate, wherein the evaporation substrate comprises an evaporation surface;
providing a movable carrier, and arranging M evaporation sources and M angle limiting units on the movable carrier, wherein M is an integer greater than or equal to 2, and the evaporation surface is the surface of the evaporation substrate close to the evaporation sources; the evaporation source comprises evaporation materials, and the evaporation materials contained in different evaporation sources are different; the angle limiting unit comprises a first opening, and the first opening is positioned between the evaporation source and the evaporation substrate in a direction perpendicular to the plane of the evaporation substrate; the evaporation range of the evaporation material on the evaporation substrate is limited by the first opening;
arranging at least one signal transmitting unit, wherein the signal transmitting unit transmits a first infrared signal, and the first infrared signal forms a second infrared signal after passing through the evaporation material;
arranging at least one signal detection unit, wherein the signal detection unit receives the second infrared signal and analyzes the evaporation materials contained in the evaporation range through the second infrared signal;
and a first driving unit is arranged and electrically connected with the angle limiting unit, and when the evaporation range contains N evaporation materials, the first driving unit drives the angle limiting unit to move to adjust the evaporation range, wherein N is an integer less than M.
14. The vapor deposition method according to claim 13, further comprising: arranging a position sensor on one side of the evaporation substrate, which is far away from the moving carrier;
the position sensor detects the position of the first infrared signal on the plane where the evaporation substrate is located, and sends the detected position information to the signal transmitting unit, and the signal transmitting unit adjusts the transmitting angle according to the position information, specifically:
if the position of the first infrared signal on the plane of the evaporation substrate does not contain evaporation materials or contains M evaporation materials, the signal transmitting unit adjusts the transmitting angle to enable the first infrared signal to be transmitted to one side edge of the evaporation substrate close to the transmitting unit.
15. The vapor deposition method according to claim 14, further comprising:
and a reflection unit is arranged and comprises a reflection surface, when the signal emission unit adjusts the emission angle, the reflection unit adjusts the reflection angle, and the signal detection unit receives a second infrared signal reflected by the reflection surface.
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