CN111525250B - Broadband semi-elliptical slot antenna array in millimeter wave antenna level packaging and design method - Google Patents
Broadband semi-elliptical slot antenna array in millimeter wave antenna level packaging and design method Download PDFInfo
- Publication number
- CN111525250B CN111525250B CN202010454324.8A CN202010454324A CN111525250B CN 111525250 B CN111525250 B CN 111525250B CN 202010454324 A CN202010454324 A CN 202010454324A CN 111525250 B CN111525250 B CN 111525250B
- Authority
- CN
- China
- Prior art keywords
- semi
- cpw
- antenna array
- antenna
- branch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
- H01Q13/10—Resonant slot antennas
- H01Q13/106—Microstrip slot antennas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
Landscapes
- Waveguide Aerials (AREA)
Abstract
A broadband coplanar waveguide semi-elliptical slot antenna array structure in millimeter wave antenna level packaging relates to the technical field of antenna arrays and solves the problem of how to design an antenna array which has large array bandwidth, high gain and easy integration and is suitable for narrow and long straight scenes; the antenna array comprises an antenna array radiation component, an antenna array feed component and a GCPW-to-CPW transition structure; the antenna array feed assembly excites a corresponding antenna unit through a GCPW to CPW transition structure and a rectangular CPW feed line; the antenna unit comprises an etched semielliptical slot and an open-circuit fan-shaped branch of a first metal grounding plate on the upper surface of a microwave medium substrate, the semielliptical slot is a slot etched by the fan-shaped outer edge of the fan-shaped branch and the first metal grounding plate, and the distance from the midpoint of a chord corresponding to a fan-shaped arc of the open-circuit fan-shaped branch to the first metal grounding plate on the periphery gradually changes according to the semielliptical shape.
Description
Technical Field
The invention belongs to the technical field of antenna arrays in millimeter wave communication and detection antenna level packaging systems, and particularly relates to a broadband semi-elliptical slot antenna array in millimeter wave antenna level packaging and a design method.
Background
Currently, with the rapid development of global communication services, the wireless mobile communication technology, which is the main means of future personal communication, has attracted great attention, and in the whole wireless communication system, the antenna is a key device for converting radio frequency signals into wireless signals, and the excellent performance of the antenna plays an important role in the success or failure of wireless communication engineering. In the field of antennas, novel antennas such as millimeter wave broadband antennas are receiving much attention due to the advantages of high transmission rate, large system capacity, strong spatial resolution and target identification capabilities, small size, integration and the like.
With the increasing demand of high-speed communication and high-resolution detection in various scenes, the antenna array needs to have a bidirectional radiation effect for the demand of communication and detection systems in narrow and long straight scenes such as ultralong streets, long bridges, tunnels, expressways, railways, subways, corridors and the like, and the antenna needs to have broadband working performance for meeting the high-speed and high-resolution demands of communication and detection equipment.
The slot antenna adopting the coplanar waveguide (CPW) structure can realize a bidirectional radiation effect, and the coplanar waveguide structure has the advantages of low profile, easy integration, lower loss and larger impedance bandwidth compared with a microstrip structure, and is an excellent choice for communication and detection antenna array structures in an antenna-level system in narrow and long scenes such as ultralong streets, long bridges, tunnels, expressways, railways, subways, corridors and the like. Various types of coplanar waveguide slot antennas have been proposed in succession.
In the prior art, Horng-Dean Chen proposes a square slot antenna structure with wide impedance branches, so that the working relative bandwidth of the antenna is improved to be more than 60%, and F.Muge designs a 1 × 4 antenna array on the basis of the research thereof, but the coupling among unit slots reduces the array bandwidth and gain; evangelos s. et al teach wide impedance stub broadband slot antennas in circular and elliptical slot structures, but their large size hinders high performance miniaturized array designs; the conventional structure slot antenna can not realize a good array effect, a small-sized slot antenna array has low gain due to the mutual coupling of too close array elements, and a small-sized slot antenna array with good gain has narrow working bandwidth and can not adapt to the broadband requirement, and the requirement of a two-way slot antenna array in an antenna-level packaging system facing to narrow-long straight scene broadband high gain can not be met.
Therefore, on the premise that the antenna array has the bidirectional radiation characteristic, the impedance bandwidth of the antenna is improved, and meanwhile, the antenna array has good array gain and a stable directional diagram effect, and is easy to integrate into the technical problem which is to be solved urgently in a high-speed and high-resolution communication and detection system facing a narrow and long straight scene.
Disclosure of Invention
The technical problem to be solved by the invention is how to design an antenna array which has large array bandwidth, high gain and easy integration and is suitable for narrow and long straight scenes.
The invention solves the technical problems through the following technical scheme.
The broadband semi-elliptical slot antenna array in the millimeter wave antenna level packaging comprises an antenna array radiation component, an antenna array feed component and a plurality of GCPW-to-CPW transition structures; the antenna array feed assembly is positioned on the lower surface of the microwave dielectric substrate (171); the antenna array radiation assembly is positioned on the upper surface of a microwave medium substrate (171) and comprises a plurality of antenna units, a plurality of rectangular CPW feeders (31) and a first metal grounding plate (161), wherein the antenna units are correspondingly connected with the rectangular CPW feeders (31), the rectangular CPW feeders (31) are correspondingly connected with a plurality of GCPW-to-CPW transition structures, and the GCPW-to-CPW transition structures are respectively and correspondingly connected with the output end of the antenna array feed assembly; the antenna array feed assembly excites corresponding antenna units through a plurality of GCPW to CPW transition structures and a plurality of rectangular CPW feed lines (31); the antenna unit comprises an etched semielliptical slot (11) and an open-circuit fan-shaped branch (21) of a first metal grounding plate (161) on the upper surface of a microwave dielectric substrate (171), the semielliptical slot (11) is a slot etched by the fan-shaped outer edge of the fan-shaped branch and the first metal grounding plate (161), and the distance from the midpoint of a chord corresponding to a fan-shaped arc of the open-circuit fan-shaped branch (21) to the first metal grounding plate (161) on the periphery gradually changes according to a semielliptical shape.
Through the combination of the semi-elliptical gap and the open-circuit fan-shaped branches, the distance from the branches to the first metal grounding plate around gradually changes, the impedance change among different resonance modes is small, and the antenna resonance effect in a broadband range is realized; compared with the traditional circular and elliptical gap structures, the gap width is shortened, the array radiation effect is improved, and compared with the traditional rectangular gap structure, the rectangular gap structure has larger array bandwidth and gain.
As a further improvement of the technical scheme of the invention, the semi-ellipse minor semi-axis is superposed with the upper bottom of the isosceles trapezoid, the length of the semi-ellipse minor semi-axis is greater than that of the upper bottom of the isosceles trapezoid, the semi-ellipse major semi-axis is superposed with the longitudinal center line of the rectangular CPW feeder line (31), and the length of the semi-ellipse major semi-axis is greater than the distance from the vertex of the sector arc of the open-circuit sector branch (21) to the chord corresponding to the arc.
As a further improvement of the technical scheme of the invention, the open-circuit fan-shaped branch (21) comprises a gradually-changed trapezoidal CPW transmission band and a fan-shaped transmission band, the shape of the gradually-changed trapezoidal CPW transmission band is isosceles trapezoid, the length of a chord corresponding to a fan-shaped arc of the fan-shaped transmission band is equal to the upper bottom of the isosceles trapezoid, the width of a rectangular CPW feeder line (31) is equal to the lower bottom of the isosceles trapezoid, and the rectangular CPW feeder line (31), the gradually-changed trapezoidal CPW transmission band and the fan-shaped transmission band are sequentially connected and used for transmitting excitation signals.
As a further improvement of the technical scheme of the invention, the GCPW-to-CPW transition structure comprises a plurality of transition branches, a plurality of multi-stage bevel slots (51) and a plurality of first metal through holes (41); the first metal through hole (41) is a through hole drilled at one end, far away from the open-circuit fan-shaped branch (21), of each rectangular CPW feeder line (31) and is used for connecting the rectangular CPW feeder line (31) and the transition branch; the transition branch is a strip-shaped microstrip line integrally etched on a copper-coated layer on the lower surface of the microwave dielectric substrate (171), and gaps with certain width matched with the edges of the strip-shaped microstrip line are reserved on two sides of the strip-shaped microstrip line; the multistage oblique angle slots (51) are V-shaped slots formed by etching at a certain distance below one end, far away from the open-circuit fan-shaped branch (21), of the rectangular CPW feeder line (31), and comprise two symmetrical first-stage oblique angle slots (511), two second-stage oblique angle slots (512) and two third-stage oblique angle slots (513); the outer edges of the first-stage oblique angle groove (511), the second-stage oblique angle groove (512) and the third-stage oblique angle groove (513) are equal straight line segments and are connected end to end.
As a further improvement of the technical scheme of the invention, the antenna array feed assembly comprises a multi-output multi-order GCPW power division feed network; the multi-output multi-stage GCPW power division feed network comprises a plurality of output branches and a plurality of impedance transformation branches, the output branches and the impedance transformation branches are all strip-shaped microstrip lines integrally etched on a copper coating layer on the lower surface of a microwave medium substrate (171), and gaps with certain widths and matched with the edges of the strip-shaped microstrip lines are reserved on two sides of each strip-shaped microstrip line.
As a further improvement of the technical scheme of the invention, the lower surface copper-coated layer of the microwave dielectric substrate (171) is divided into a plurality of lower-layer metal grounding plates by a strip microstrip line of a multi-output multi-stage GCPW power division feed network, a plurality of second metal through holes (151) which are uniformly and continuously distributed are drilled at the outer edges of the lower-layer metal grounding plates on the two sides of the strip microstrip line, and the corners of the strip microstrip line and the lower-layer metal grounding plates are subjected to chamfering treatment.
As a further improvement of the technical scheme of the invention, a plurality of third metal through holes (152) are uniformly and symmetrically drilled on two sides of one end, away from the open-circuit fan-shaped branch (21), of the rectangular CPW feeder line (31), and the first metal ground plate (161) is connected with the lower-layer metal ground plate through the plurality of third metal through holes (152).
As a further improvement of the technical scheme of the invention, the area of the lower surface of the microwave dielectric substrate (171) corresponding to the semi-elliptical slot (11) is a naked microwave dielectric substrate.
As a further improvement of the technical solution of the present invention, the antenna unit and the power division feed network both have a broadband impedance bandwidth.
The design method of the broadband semi-elliptical slot antenna array in millimeter wave antenna level packaging comprises the following steps:
1) the length calculation formula of the chord corresponding to the sector arc of the open-circuit sector branch (21) is calculated according to the central frequency as follows:
4l1≈λg (1)
wherein the content of the first and second substances,l1is the length of a chord corresponding to the arc of the sector of the open-circuit sector branch (21), and lambdag is the guided wave wavelength in the medium;
2) the formulas for calculating the length of the semi-elliptical minor axis and the length of the semi-elliptical major axis according to the center frequency are as follows:
0.75*(l2+l3)≈λg (2)
l3≈2*l2 (3)
wherein l2Semi-elliptical minor semi-axis length, l3The length of a semi-elliptic major semi-axis and lambda g are the guided wave wavelength in the medium;
3) the size calculation formula of the multistage oblique angle slot (51) is as follows:
wherein λ g is the guided wave wavelength in the medium; l is1And W1The length and bottom edge width of the first-stage bevel grooving, L2And W2For the length and bottom edge width, L, of the second stage bevel grooving3And W3The length and bottom edge width of the third stage bevel slot.
The invention has the advantages that:
(1) through the combination of the semi-elliptical gap and the fan-shaped branches, the distance from the branches to the surrounding ground plate is gradually changed, the impedance change among different resonance modes is small, and the antenna resonance effect in a broadband range is achieved. Compared with the traditional circular and elliptical gap structures, the gap width is shortened, and the array radiation effect is improved; compared with the traditional rectangular slot structure, the array bandwidth and the gain are larger.
(2) The multilevel oblique angle slot and the metal via hole A are used for impedance matching between GCPW and CPW signal lines, and the gradual change structure of the multilevel oblique angle slot can compensate signal discontinuity in the transmission and conversion process, so that the signal is gradually converted from a GCPW mode to a CPW mode, the signal discontinuity in the conversion process is reduced, and the transmission effect of a feed network is improved.
(3) The GCPW increases the mechanical hardness of the structure, is easy to dissipate heat, isolates the influence of signals in a multi-layer structure system on the front end circuit below the metal floor, is more favorable for integration, and realizes the broadband transmission effect by the multi-level impedance branches.
(4) The second metal through holes which are uniformly and continuously distributed restrain signals which need to be transmitted around the strip-shaped microstrip line, so that the loss in the transmission process is reduced. And chamfering treatment is performed, so that signal transmission discontinuity is reduced, and the transmission effect is improved.
(5) The third metal via hole has the effect of binding signals to be transmitted around the signal line, so that the signals are gradually converted from a GCPW mode to a CPW mode, the discontinuity of the signals in the conversion process is reduced, and the transmission effect of the feed network is improved.
(6) The bottom of the microwave medium substrate where the slot antenna array radiation unit is located is free of a metal grounding plate, and a bidirectional radiation effect is achieved.
(7) The antenna unit and the power division feed network both have broadband impedance bandwidth, the integrated design of the antenna array and the feed network is realized, and the requirements of miniaturization and high integration of the current system are met.
Drawings
Fig. 1 is a perspective view of a broadband semi-elliptical slot antenna array in a millimeter wave antenna level package according to an embodiment of the present invention;
fig. 2 is a z-axis negative direction top view of a broadband semi-elliptical slot antenna array in millimeter wave antenna level packaging according to an embodiment of the present invention;
fig. 3 is a bottom view of the positive z-axis direction of the wideband semi-elliptical slot antenna array in the millimeter wave antenna level package according to the embodiment of the present invention;
fig. 4 is a positive side view of the x-axis of the wideband semi-elliptical slot antenna array in the millimeter wave antenna level package according to the embodiment of the present invention;
fig. 5 is a schematic perspective view of a conversion structure from a GCPW power division feed network to a CPW feed line of a wideband semi-elliptical slot antenna array in millimeter wave antenna level packaging according to an embodiment of the present invention;
fig. 6 is a schematic diagram illustrating size calculation of multi-stage oblique angle slot of a broadband semi-elliptical slot antenna array in millimeter wave antenna level packaging according to an embodiment of the present invention;
fig. 7 is a graph comparing S parameters and gain results of semi-elliptical slot antenna elements of a wideband semi-elliptical slot antenna array in millimeter wave antenna level packaging according to an embodiment of the present invention with conventional rectangular and circular slot antenna elements;
fig. 8 is a diagram showing simulation results of S parameters of a wideband semi-elliptical slot antenna array in millimeter wave antenna level packaging according to an embodiment of the present invention;
fig. 9 is a diagram showing a result of gain simulation of a wideband semi-elliptical slot antenna array in a millimeter wave antenna level package according to an embodiment of the present invention;
fig. 10 is an E-plane radiation pattern of an antenna of a wideband semi-elliptical slot antenna array in a millimeter wave antenna level package according to an embodiment of the present invention;
fig. 11 is an antenna H-plane radiation pattern of a wideband semi-elliptical slot antenna array in a millimeter wave antenna level package according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The technical scheme of the invention is further described by combining the drawings and the specific embodiments in the specification:
example one
As shown in fig. 1 to 5, the broadband semi-elliptical slot antenna array in the millimeter wave antenna level package includes a microwave dielectric substrate 171, the microwave dielectric substrate 171 is insulating, the upper surface of the microwave dielectric substrate 171 is completely covered with a copper layer, one part of the lower surface of the microwave dielectric substrate 171 is covered with a copper layer, and the other part is an exposed insulating microwave dielectric substrate 171.
Coating a copper layer on the upper surface of the microwave dielectric substrate 171 from the bottom along the x-axis directionEtching four rectangular CPW feeder lines 31 and four open-circuit fan-shaped branch sections 21 which are uniformly and symmetrically arranged on the upper surface of the substrate; the open-circuit fan-shaped branch knot 21 comprises a gradually-changed trapezoid CPW transmission belt and a fan-shaped transmission belt, the shape of the gradually-changed trapezoid CPW transmission belt is isosceles trapezoid, and the length of a chord corresponding to a fan-shaped arc of the fan-shaped transmission belt is l1，l1The width of the rectangular CPW feeder line 31 is equal to the width of the lower bottom of the isosceles trapezoid, and the rectangular CPW feeder line 31, the gradually-changing trapezoid CPW transmission band and the fan-shaped transmission band are sequentially connected and used for transmitting excitation signals.
The formula for calculating the length of the chord corresponding to the sector arc of the open-circuit sector branch 21 from the center frequency is as follows:
4l1≈λg (1)
wherein l1The length of a chord corresponding to the arc of the sector of the open-circuit sector branch 21 is λ g, which is the guided wave wavelength in the medium.
Two long slot sides are symmetrically etched on two sides of each rectangular CPW feeder line 31 at a certain distance along the x-axis direction, and the length of the two long slot sides is equal to that of the rectangular CPW feeder line 31.
Etching a multi-stage bevel notch 51 below one end (in the x-axis negative direction) of each rectangular CPW feeder line 31 far away from the fan-shaped branch knot at a certain distance; the multistage oblique angle slots 51 comprise two symmetrical first-stage oblique angle slots 511, two second-stage oblique angle slots 512 and two third-stage oblique angle slots 513; the outer edges of the first-stage oblique angle slot 511, the second-stage oblique angle slot 512 and the third-stage oblique angle slot 513 are equal straight line segments and are connected end to form a stepped V-shaped structure.
Etching a semi-elliptical slit edge in the positive direction of the x axis of the open-circuit fan-shaped branch knot 21, wherein the short semi-axis of the semi-ellipse is superposed with the upper bottom of the isosceles trapezoid, and the length l of the semi-ellipse is equal to that of the isosceles trapezoid2Is longer than the upper bottom of the isosceles trapezoid, the semiellipse long semiaxis is coincident with the longitudinal central line of the rectangular CPW feeder line 31, and the length l of the semiellipse long semiaxis is longer than the longitudinal central line of the rectangular CPW feeder line 313The distance between the top point of the sector arc of the sector branch and the chord corresponding to the arc is larger than that between the top point of the sector arc of the sector branch and the chord corresponding to the arc.
Calculating the short half of the semi-ellipse from the center frequencyLength of axis l2Semi-elliptical major half axis length l3The formula of (1) is as follows:
0.75*(l2+l3)≈λg (2)
l3≈2*l2 (3)
wherein l2Semi-elliptical minor semi-axis length, l3The length of a longer half shaft of the semiellipse and lambdag are the guided wave wavelength in the medium.
Etching two symmetrical transitional connecting edges at a certain distance on two sides of each gradually-changed trapezoidal CPW transmission belt; the two transitional connecting edges are used for connecting the semi-elliptical seam edge and the long seam edge; the included angle between the transitional connection edge and the semi-elliptical short half shaft is smaller than the included angle between the isosceles trapezoid waist and the semi-elliptical short half shaft.
The semi-elliptical slot edge, the two transitional connecting edges, the two long slot edges and the multistage oblique angle slot 51 are sequentially connected and integrally etched and formed, and a closed slot is formed with the outer boundary of the rectangular CPW feeder line 31; the copper-clad layer in the gap area is completely corroded to be a naked insulating microwave dielectric substrate 171; the copper layer is coated on the upper surface of the microwave dielectric substrate 171 outside the closed gap edge to form a first metal grounding plate 161; in the closed slot, the slot formed by the edge of the semi-elliptic slot and the fan-shaped outer edge of the open-circuit fan-shaped branch 21 is the semi-elliptic slot 11, the distance from the open-circuit fan-shaped branch 21 to the first metal grounding plate 161 is gradually changed, the impedance change among different resonance modes is small, and the antenna resonance effect in a broadband range is realized.
The area of the lower surface of the microwave dielectric substrate 171 corresponding to the semi-elliptical slot 11 is a bare microwave dielectric substrate, and no copper-clad layer exists on the surface of the microwave dielectric substrate in the area, so that signals emitted by the antenna cannot be shielded by the copper-clad layer, and thus the effect of bidirectional radiation of the antenna is achieved.
A first metal through hole 41 is drilled on the transmission band at one end of each rectangular CPW feeder line 31 far away from the open-circuit fan-shaped branch section 21.
The copper-coated layer on the lower surface of the microwave dielectric substrate 171 is etched to form a four-output two-order power division feed network, and the four-output two-order power division feed network includes: a power-dividing feed network input branch 61, a first-stage power-dividing network impedance transformation branch 71, a first-stage power-dividing network output branch 81, a second-stage power-dividing network output branch 82, a first-stage power-dividing network first-stage impedance transformation branch 91, a second-stage power-dividing network first-stage impedance transformation branch 92, a first-stage power-dividing network second-stage impedance transformation branch 101, a second-stage power-dividing network second-stage impedance transformation branch 102, a first-stage power-dividing network third-stage impedance transformation branch 111, a second-stage power-dividing network third-stage impedance transformation branch 112, a first-stage power-dividing network output branch 121, a second-stage power-dividing network output branch 122, a third-stage power-dividing network output branch 123, a fourth-stage power-dividing network output branch 124, a first-stage power-dividing network-to-transition-structure impedance transformation branch 131, a second-stage power-dividing network-to-transition-structure impedance transformation branch 132, a power-dividing network output branch, a power-to-division network output power-division network, a power-to-division network output power-division network, The third secondary power distribution network-to-transition structure impedance transformation branch 133, the fourth secondary power distribution network-to-transition structure impedance transformation branch 134, the first transition branch 141, the second transition branch 142, the third transition branch 143, and the fourth transition branch 144 are all strip-shaped microstrip lines integrally etched on the copper-clad layer on the lower surface of the microwave dielectric substrate 171, and gaps with certain width matched with the edges of the strip-shaped microstrip lines are reserved on both sides of the strip-shaped microstrip lines.
The width of the rectangular microstrip line of the power division feed network input branch section 61 is larger than that of the strip microstrip line of the first-stage power division network impedance transformation branch section 71, so that a two-stage step-shaped structure is formed.
The widths of the strip-shaped microstrip lines of the first primary power distribution network output branch 81, the first secondary power distribution network first-stage impedance transformation branch 91, the first secondary power distribution network second-stage impedance transformation branch 101 and the first secondary power distribution network third-stage impedance transformation branch 111 are sequentially increased to form a four-stage step-shaped structure.
The widths of the strip-shaped microstrip lines of the second-stage power distribution network output branch 82, the second-stage power distribution network first-stage impedance transformation branch 92, the second-stage power distribution network second-stage impedance transformation branch 102 and the second-stage power distribution network third-stage impedance transformation branch 112 are sequentially increased to form a four-stage step-shaped structure;
the widths of the strip-shaped microstrip lines from the first secondary power division network output branch 121, the first secondary power division network to the transition structure impedance transformation branch 131 and the first transition branch 141 are sequentially increased to form a three-stage step-shaped structure.
The widths of the strip-shaped microstrip lines from the second-stage power distribution network output branch 122, the second-stage power distribution network-to-transition structure impedance transformation branch 132 and the second transition branch 142 are sequentially increased to form a three-stage stepped structure.
The widths of the strip-shaped microstrip lines from the output branch 123 of the third-stage power distribution network, the impedance transformation branch 133 from the third-stage power distribution network to the transition structure and the third transition branch 143 are sequentially increased to form a three-stage step-shaped structure.
The widths of the strip-shaped microstrip lines from the fourth secondary power distribution network output branch 124, the fourth secondary power distribution network to the transition structure impedance transformation branch 134 and the fourth transition branch 144 are sequentially increased to form a three-stage step-shaped structure.
Determining the working wavelength according to the working center frequency of the power division feed network; setting the length of an impedance conversion branch of a first-stage power division network in the power division feed network to be a quarter wavelength, and selecting proper length according to the distance between antenna array elements by the length of an input branch 61 of the power division feed network and the length of an output branch of the first-stage power division network; the four-output power division feed network adopts SMA coaxial connector matching and is used for exciting an antenna, a third-stage impedance matching branch is loaded on a first-stage power division network output branch and a second-stage power division network output branch, the widths of metal ground plate gaps on two sides of the second-stage branch and the third-stage branch are kept the same, only the width of a signal line is changed to realize impedance conversion, an impedance conversion branch is loaded between the power divider output branch and a GCPW-to-CPW transition structure branch, and the widths of the metal ground plate gaps on two sides of the two branches are kept the same.
The first output power division feed network structure comprises a power division feed network input branch section 61, a first-stage power division network impedance transformation branch section 71, a first-stage power division network output branch section 81, a first second-stage power division network first-stage impedance transformation branch section 91, a first second-stage power division network second-stage impedance transformation branch section 101, a first second-stage power division network third-stage impedance transformation branch section 111, a first second-stage power division network output branch section 121, a first second-stage power division network-to-transition structure impedance transformation branch section 131 and a first transition branch section 141 which are connected in sequence.
The second power division feed network structure comprises a power division feed network input branch section 61, a first-stage power division network impedance transformation branch section 71, a first-stage power division network output branch section 81, a first-stage impedance transformation branch section 91 of a first second-stage power division network, a second-stage impedance transformation branch section 101 of a first second-stage power division network, a third-stage impedance transformation branch section 111 of the first second-stage power division network, a second-stage power division network output branch section 122, a second-stage power division network-to-transition structure impedance transformation branch section 132 and a second transition branch section 142 which are connected in sequence.
The third power division feed network structure comprises a power division feed network input branch section 61, a first-stage power division network impedance transformation branch section 71, a second-stage power division network output branch section 82, a second-stage power division network first-stage impedance transformation branch section 92, a second-stage power division network second-stage impedance transformation branch section 102, a second-stage power division network third-stage impedance transformation branch section 112, a third-stage power division network output branch section 123, a third-stage power division network-to-transition structure impedance transformation branch section 133 and a third transition branch section 143 which are connected in sequence.
The fourth power division feed network structure comprises a power division feed network input branch section 61, a first-stage power division network impedance transformation branch section 71, a second-stage power division network output branch section 82, a second-stage power division network first-stage impedance transformation branch section 92, a second-stage power division network second-stage impedance transformation branch section 102, a second-stage power division network third-stage impedance transformation branch section 112, a fourth-stage power division network output branch section 124, a fourth-stage power division network-to-transition structure impedance transformation branch section 134 and a fourth transition branch section 144 which are connected in sequence.
The first transition branch 141, the second transition branch 142, the third transition branch 143, and the fourth transition branch 144 are correspondingly drilled with first metal through holes 41, and the first metal through holes 41 are used for connection transmission of electrical signals between the rectangular CPW feeder line 31 on the upper surface of the microwave dielectric substrate 171 and the four-output two-order power division feeder network on the lower surface of the microwave dielectric substrate 171.
The lower surface copper-coated layer of the microwave dielectric substrate 171 is divided into a first lower metal ground plate 162, a second lower metal ground plate 163, a third lower metal ground plate 164, a fourth lower metal ground plate 165 and a fifth lower metal ground plate 166 by a strip microstrip line of a four-way output two-order power division feed network; the first lower metal ground plate 162 is located at the outer edge of the first power distribution network structure in the y-axis negative direction, the second lower metal ground plate 163 is located at the outer edge of the fourth power distribution network structure in the y-axis positive direction, the third lower metal ground plate 164 is located between the outer edge of the second power distribution network structure and the outer edge of the third power distribution network structure, the fourth lower metal ground plate 165 is located between the outer edge of the first power distribution network structure and the outer edge of the second power distribution network structure, and the fifth lower metal ground plate 166 is located between the outer edge of the third power distribution network structure and the outer edge of the fourth power distribution network structure.
The strip-shaped microstrip line and the metal grounding plates on the two sides are subjected to corner cutting treatment at the corners, so that the loss in the transmission process is reduced.
A plurality of second metal via holes 151 are drilled at the outer edges of the first lower metal ground plate 162, the second lower metal ground plate 163, the third lower metal ground plate 164, the fourth lower metal ground plate 165 and the fifth lower metal ground plate 166, the second metal via holes 151 are used for connection between the first lower metal ground plate 162, the second lower metal ground plate 163, the third lower metal ground plate 164, the fourth lower metal ground plate 165 and the first metal ground plate 161, and the signals to be transmitted are bound around the strip microstrip line by the plurality of second metal via holes 151 which are uniformly and continuously distributed, so that the loss in the transmission process is reduced.
A plurality of third metal through holes 152 are uniformly and symmetrically drilled on two sides of one end, away from the open-circuit fan-shaped branch section 21, of the rectangular CPW feeder line 31, and the first metal ground plate 161 is connected with the first lower-layer metal ground plate 162, the second lower-layer metal ground plate 163, the third lower-layer metal ground plate 164, the fourth lower-layer metal ground plate 165 and the fifth lower-layer metal ground plate 166 through the plurality of third metal through holes 152; the third metal via hole 152 acts to tie the signal to be transmitted around the signal line, so that the signal is gradually converted from the GCPW mode to the CPW mode, thereby reducing the discontinuity of the signal in the conversion and improving the transmission effect of the feed network.
As shown in fig. 5, the calculation formula of the size of the multistage bevel slot 51 is as follows:
wherein λ g is the guided wave wavelength in the medium; l is1And W1The length and bottom edge width of the first-stage bevel grooving, L2And W2For the length and bottom edge width, L, of the second stage bevel grooving3And W3The length and bottom edge width of the third stage bevel slot.
The multistage oblique angle slot 51 is used for impedance matching between GCPW and CPW signal lines, and the gradual change structure of the multistage oblique angle slot can compensate signal discontinuity in the transmission conversion process, so that signals are gradually converted from a GCPW mode to a CPW mode, the signal discontinuity in the conversion is reduced, and the transmission effect of a feed network is improved.
As shown in fig. 7, which shows a comparison graph of S-parameters and gains of a semi-elliptical slot antenna unit provided according to the present invention with conventional rectangular and circular slot antenna units, the antenna unit of the present invention has good gain and a smaller gain variation range over a wide frequency band.
As shown in fig. 8, a result graph of S parameter of a wideband CPW semi-elliptical slot antenna array in millimeter wave antenna level package according to the present invention is provided, the operating frequency band of the antenna array is 26-40GHz, return loss S11 in the resonance bandwidth is less than-10 dB, the relative bandwidth is 42%, and the array realizes wideband characteristics.
As shown in fig. 9, which provides a graph of antenna gain results according to the present invention. As can be seen from the figure, the average gain in the operating bandwidth of the bidirectional antenna array is 11dBi, the peak gain is 12dBi, and the radiation effect with stable gain is realized.
As shown in fig. 10 and 11, which provide graphs of antenna gain results according to the present invention. The average gain in the working bandwidth of the bidirectional antenna array is 11dBi, the peak gain is 12dBi, and the radiation effect with stable gain is realized. The antenna array of the invention radiates E-plane and H-plane directional patterns at 30GHz, 35GHz and 40 GHz. The gain difference between the antenna side lobe and the main board is more than-15 dB, the antenna array radiation pattern is bilaterally symmetrical in the whole resonance bandwidth, the directivity of the array H surface is strong, the array E surface has a wide-angle radiation effect, and the bidirectional radiation effect is good.
Based on the broadband coplanar waveguide semi-elliptical slot antenna array in millimeter wave antenna level packaging, the antenna array in a high-speed communication and high-resolution detection antenna level packaging system for narrow and long straight scenes such as ultralong streets, long bridges, tunnels, expressways, railways, subways and corridors can be designed, the antenna disclosed by the invention adopts semi-elliptical slots and sector branches to realize that the resonance bandwidth of the antenna reaches 28-45GHz, and the antenna has the advantages of high gain, low profile, high directivity, high performance and integration in the resonance bandwidth of the antenna. The resonant bandwidth of the antenna covers 26-40GHz (relative bandwidth 42%). The peak gain of the two-way antenna array is 12dBi over the entire resonance bandwidth. Compared with the traditional coplanar waveguide slot antenna array, the antenna array has the advantages of large relative bandwidth, high gain and easy integration, and is suitable for a miniaturized and high-performance millimeter wave antenna level packaging system.
Through the combination of the semi-elliptical gap and the sector branches, the distance from the branches to the surrounding ground plate is gradually changed, the impedance change among different resonance modes is small, and the antenna resonance effect in a broadband range is realized; compared with the traditional circular and elliptical gap structures, the invention shortens the gap width and improves the array radiation effect; compared with the traditional rectangular gap structure, the unit coupling is weakened, and the array bandwidth and the gain are larger; the broadband coplanar waveguide slot antenna array comprises four slot antenna units on the upper layer of a microwave medium substrate, a GCPW power division feed network on the lower layer of the microwave medium substrate and a transition structure from the lower layer of the GCPW to an upper layer of the CPW; open-circuit fan-shaped branches are loaded in the gap units, metal through holes are added between upper and lower metal grounding plates of a dielectric plate on two sides of a feed network signal line, chamfering processing is carried out on corners of the signal line and the metal grounding plates, GCPW transition branches on the lower layer of the dielectric plate are connected with CPW feeders on the upper layer of the dielectric plate through the metal through holes, bevel grooves etched on the upper metal grounding plate of the dielectric plate are formed, the metal grounding plates on two sides of the CPW signal line are covered with the same metal grounding plate on the lower layer of the dielectric plate, and the metal through holes are loaded between the upper and lower layers of the grounding plates.
The design method of the broadband semi-elliptical slot antenna array in millimeter wave antenna level packaging comprises the following steps:
1) the length calculation formula of the chord corresponding to the sector arc of the open-circuit sector branch (21) is calculated according to the central frequency as follows:
4l1≈λg (1)
wherein l1Is the length of a chord corresponding to the arc of the sector of the open-circuit sector branch (21), and lambdag is the guided wave wavelength in the medium.
2) The formulas for calculating the length of the semi-elliptical minor axis and the length of the semi-elliptical major axis according to the center frequency are as follows:
0.75*(l2+l3)≈λg (2)
l3≈2*l2 (3)
wherein l2Semi-elliptical minor semi-axis length, l3The length of a longer half shaft of the semiellipse and lambdag are the guided wave wavelength in the medium.
3) The size calculation formula of the multistage oblique angle slot (51) is as follows:
wherein λ g is the guided wave wavelength in the medium; l is1And W1The length and bottom edge width of the first-stage bevel grooving, L2And W2For the length and bottom edge width, L, of the second stage bevel grooving3And W3Is a third stageThe length of the bevel slot and the width of the bottom edge.
The above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (8)
1. The broadband semi-elliptical slot antenna array in millimeter wave antenna level packaging is characterized by comprising an antenna array radiation assembly, an antenna array feed assembly and a plurality of GCPW-to-CPW transition structures; the antenna array feed assembly is positioned on the lower surface of the microwave dielectric substrate (171); the antenna array radiation assembly is positioned on the upper surface of a microwave medium substrate (171) and comprises a plurality of antenna units, a plurality of rectangular CPW feeders (31) and a first metal grounding plate (161), wherein the antenna units are correspondingly connected with the rectangular CPW feeders (31), the rectangular CPW feeders (31) are correspondingly connected with a plurality of GCPW-to-CPW transition structures, and the GCPW-to-CPW transition structures are respectively and correspondingly connected with the output end of the antenna array feed assembly; the antenna array feed assembly excites corresponding antenna units through a plurality of GCPW to CPW transition structures and a plurality of rectangular CPW feed lines (31); the antenna unit comprises an etched semielliptical slot (11) and an open-circuit fan-shaped branch (21) of a first metal grounding plate (161) on the upper surface of a microwave dielectric substrate (171), wherein the semielliptical slot (11) is a slot etched by the fan-shaped outer edge of the fan-shaped branch and the first metal grounding plate (161), and the distance from the midpoint of a chord corresponding to a fan-shaped arc of the open-circuit fan-shaped branch (21) to the first metal grounding plate (161) on the periphery gradually changes according to a semielliptical shape;
the GCPW-CPW transition structure comprises a plurality of transition branches, a plurality of multi-stage oblique angle slots (51) and a plurality of first metal through holes (41); the first metal through hole (41) is a through hole drilled at one end, far away from the open-circuit fan-shaped branch (21), of each rectangular CPW feeder line (31) and is used for connecting the rectangular CPW feeder line (31) and the transition branch; the transition branch is a strip-shaped microstrip line integrally etched on a copper-coated layer on the lower surface of the microwave dielectric substrate (171), and gaps with certain width matched with the edges of the strip-shaped microstrip line are reserved on two sides of the strip-shaped microstrip line; the multistage oblique angle slots (51) are V-shaped slots formed by etching at a certain distance below one end, far away from the open-circuit fan-shaped branch (21), of the rectangular CPW feeder line (31), and comprise two symmetrical first-stage oblique angle slots (511), two second-stage oblique angle slots (512) and two third-stage oblique angle slots (513); the outer edges of the first-stage oblique angle groove (511), the second-stage oblique angle groove (512) and the third-stage oblique angle groove (513) are uniform straight line segments and are connected end to end;
the antenna array feed assembly comprises a multi-output multi-order GCPW power division feed network; the multi-output multi-stage GCPW power division feed network comprises a plurality of output branches and a plurality of impedance transformation branches, the output branches and the impedance transformation branches are all strip-shaped microstrip lines integrally etched on a copper coating layer on the lower surface of a microwave medium substrate (171), and gaps with certain widths and matched with the edges of the strip-shaped microstrip lines are reserved on two sides of each strip-shaped microstrip line.
2. The millimeter wave antenna level packaged broadband semi-elliptical slot antenna array according to claim 1, wherein a minor semi-axis of the semi-ellipse coincides with an upper base of the isosceles trapezoid, and the length of the minor semi-ellipse is greater than the length of the upper base of the isosceles trapezoid, and a major semi-axis of the semi-ellipse coincides with a longitudinal center line of the rectangular CPW feeder (31), and the length of the major semi-axis is greater than a distance from a vertex of a sector arc of the open-circuit sector stub (21) to a chord corresponding to the arc.
3. The millimeter wave antenna level package in-broadband semi-elliptical slot antenna array of claim 1, wherein the open-circuit sector branch (21) comprises a gradually-changing trapezoidal CPW transmission band and a sector transmission band, the gradually-changing trapezoidal CPW transmission band is shaped as an isosceles trapezoid, a chord corresponding to a sector arc of the sector transmission band has a length equal to an upper base of the isosceles trapezoid, a rectangular CPW feeder line (31) has a width equal to a lower base of the isosceles trapezoid, and the rectangular CPW feeder line (31), the gradually-changing trapezoidal CPW transmission band and the sector transmission band are sequentially connected for transmitting an excitation signal.
4. The millimeter wave antenna-level packaged broadband semielliptical slot antenna array as claimed in claim 1, wherein the lower surface copper-clad layer of the microwave dielectric substrate (171) is divided into a plurality of lower metal ground plates by a multi-output multi-level strip microstrip line of the GCPW power division feed network, a plurality of second metal via holes (151) uniformly and continuously distributed are drilled at the outer edges of the lower metal ground plates at both sides of the strip microstrip line, and the corners of the strip microstrip line and the lower metal ground plates are chamfered.
5. The millimeter wave antenna-scale packaged broadband semi-elliptical slot antenna array as claimed in claim 1, wherein a plurality of third metal via holes (152) are uniformly and symmetrically drilled on both sides of one end of the rectangular CPW feeder (31) far away from the open-circuit fan-shaped branch (21), and the first metal ground plate (161) is connected with the lower metal ground plate through the plurality of third metal via holes (152).
6. The broadband semi-elliptical slot antenna array in millimeter wave antenna level packaging according to claim 1, wherein the area of the lower surface of the microwave dielectric substrate (171) corresponding to the semi-elliptical slot (11) is a bare microwave dielectric substrate.
7. The millimeter wave antenna-scale packaged wide-band semi-elliptical slot antenna array of claim 1, wherein the antenna elements and the power division feed network both have wide-band impedance bandwidths.
8. A design method of a broadband semi-elliptical slot antenna array applied to a millimeter wave antenna level package according to any one of claims 1 to 7 is characterized by comprising the following steps:
1) the length calculation formula of the chord corresponding to the sector arc of the open-circuit sector branch (21) is calculated according to the central frequency as follows:
4l1≈λg (1)
wherein l1Is the length of a chord corresponding to the arc of the sector of the open-circuit sector branch (21), and lambdag is the guided wave wavelength in the medium;
2) the formulas for calculating the length of the semi-elliptical minor axis and the length of the semi-elliptical major axis according to the center frequency are as follows:
0.75*(l2+l3)≈λg (2)
l3≈2*l2 (3)
wherein l2Semi-elliptical minor semi-axis length, l3The length of a semi-elliptic major semi-axis and lambda g are the guided wave wavelength in the medium;
3) the size calculation formula of the multistage oblique angle slot (51) is as follows:
wherein λ g is the guided wave wavelength in the medium; l is1And W1The length and bottom edge width of the first-stage bevel grooving, L2And W2For the length and bottom edge width, L, of the second stage bevel grooving3And W3The length and bottom edge width of the third stage bevel slot.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010454324.8A CN111525250B (en) | 2020-05-26 | 2020-05-26 | Broadband semi-elliptical slot antenna array in millimeter wave antenna level packaging and design method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010454324.8A CN111525250B (en) | 2020-05-26 | 2020-05-26 | Broadband semi-elliptical slot antenna array in millimeter wave antenna level packaging and design method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111525250A CN111525250A (en) | 2020-08-11 |
| CN111525250B true CN111525250B (en) | 2022-03-25 |
Family
ID=71905503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010454324.8A Active CN111525250B (en) | 2020-05-26 | 2020-05-26 | Broadband semi-elliptical slot antenna array in millimeter wave antenna level packaging and design method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111525250B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112768914B (en) * | 2020-12-29 | 2022-03-22 | 中山大学 | 3X 4 broadband wave beam fixed array antenna |
| CN113612020B (en) * | 2021-06-22 | 2022-08-30 | 北京邮电大学 | Feed network and multi-beam array antenna |
| CN114824833B (en) * | 2022-07-01 | 2022-09-02 | 盛纬伦(深圳)通信技术有限公司 | Millimeter wave junction type slotted array antenna based on printed circuit board gap waveguide technology |
| CN115473042B (en) * | 2022-09-15 | 2023-04-14 | 安徽大学 | Broadband 5G circularly polarized filter antenna |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203180065U (en) * | 2013-03-20 | 2013-09-04 | 北京交通大学 | Coplanar waveguide feed plane ultra-wideband antenna array |
| CN105958203A (en) * | 2016-06-22 | 2016-09-21 | 广东工业大学 | Ultra-wide-band wave-trapping antenna |
| CN205646144U (en) * | 2016-04-28 | 2016-10-12 | 天津职业技术师范大学 | Plane WLAN trapped wave ultra wide band microstrip antenna |
| WO2017063067A1 (en) * | 2015-10-14 | 2017-04-20 | Cognitive Systems Corp. | Antenna systems for wireless sensor devices |
| DE102017109741A1 (en) * | 2016-05-06 | 2017-11-09 | GM Global Technology Operations LLC | Transparent elliptical broadband appliqué antenna for attachment to glass |
| CN206727219U (en) * | 2017-05-16 | 2017-12-08 | 广东工业大学 | A kind of circular polarised array antenna and communication equipment |
| CN110729548A (en) * | 2019-10-12 | 2020-01-24 | 青岛海信移动通信技术股份有限公司 | Mobile terminal and millimeter wave broadband array antenna |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107069204B (en) * | 2017-04-21 | 2023-06-13 | 吉林医药学院 | Elliptic gap ultra-wideband planar gap antenna with stepped structure |
| CN108390152B (en) * | 2018-04-22 | 2023-12-15 | 吉林医药学院 | Elliptical ring combined three-broadband planar slot antenna |
-
2020
- 2020-05-26 CN CN202010454324.8A patent/CN111525250B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203180065U (en) * | 2013-03-20 | 2013-09-04 | 北京交通大学 | Coplanar waveguide feed plane ultra-wideband antenna array |
| WO2017063067A1 (en) * | 2015-10-14 | 2017-04-20 | Cognitive Systems Corp. | Antenna systems for wireless sensor devices |
| CN205646144U (en) * | 2016-04-28 | 2016-10-12 | 天津职业技术师范大学 | Plane WLAN trapped wave ultra wide band microstrip antenna |
| DE102017109741A1 (en) * | 2016-05-06 | 2017-11-09 | GM Global Technology Operations LLC | Transparent elliptical broadband appliqué antenna for attachment to glass |
| CN105958203A (en) * | 2016-06-22 | 2016-09-21 | 广东工业大学 | Ultra-wide-band wave-trapping antenna |
| CN206727219U (en) * | 2017-05-16 | 2017-12-08 | 广东工业大学 | A kind of circular polarised array antenna and communication equipment |
| CN110729548A (en) * | 2019-10-12 | 2020-01-24 | 青岛海信移动通信技术股份有限公司 | Mobile terminal and millimeter wave broadband array antenna |
Non-Patent Citations (2)
| Title |
|---|
| Out-of-Plane Fed Elliptical Slot Array for Microwave Imaging;Sergey Kharkovsky等;《IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION》;20130627;第5311-5314页 * |
| 用于探地雷达的超宽带介质埋藏天线设计;郑艳等;《电子元件与材料》;20181231;第56-59、65页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111525250A (en) | 2020-08-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111525250B (en) | Broadband semi-elliptical slot antenna array in millimeter wave antenna level packaging and design method | |
| JP2005198311A (en) | Very small ultra wideband micro strip antenna | |
| CN114156659B (en) | Broadband common-caliber dipole array of Sub-6GHz and millimeter wave frequency bands | |
| US20170141472A1 (en) | Millimeter wave antenna for diagonal radiation | |
| CN109616764A (en) | Substrate integrates gap waveguide circular polarized antenna | |
| CN114843775A (en) | Novel palm leaf type coplanar Vivaldi array antenna and unit design | |
| CN113937488A (en) | High-isolation low-profile broadband base station antenna, control method and application | |
| CN113725599B (en) | Combined antenna for millimeter wave automobile radar | |
| Pourahmadazar et al. | High gain substrate integrated waveguide resonant slot antenna array for mm-wave band radio | |
| Kan et al. | Compact broadband coplanar waveguide-fed curved quasi-Yagi antenna | |
| CN210074169U (en) | Rectangular microstrip series-fed antenna based on grounded coplanar waveguide | |
| CN111697350A (en) | Broadband SIW slot antenna based on 77GHz balanced symmetrical formula feed | |
| CN113972482B (en) | Substrate integrated end-fire antenna based on dispersion structure | |
| Jebabli et al. | Phased millimeter-wave antenna array for 5G handled devices | |
| CN114006157B (en) | Planar quasi-yagi antenna based on substrate integrated waveguide and tapered gradient structure feed | |
| Jebabli et al. | Ultra-wideband steerable antenna array based on EBG structure for millimeter wave 5G applications | |
| Hamedani et al. | Design of Ku-band Leaky-Wave Slot Array Antenna Based on Ridge Gap Waveguide | |
| El-Din et al. | Design of an E-sectoral horn based on PRGW technology for 5G applications | |
| JPH01135107A (en) | Microstrip antenna | |
| Chen | Wideband multilayered microstrip antennas fed by coplanar waveguide-loop with and without via combinations | |
| Zhou et al. | Ultrawideband microstrip to waveguide transition for 5g millimeterwave applications | |
| Kumar et al. | Blue-tooth shaped SIW antenna for RADAR Applications | |
| CN212810543U (en) | Three-mode broadband antenna and wireless communication equipment | |
| RU2793081C1 (en) | Q-range microband antenna array | |
| Moghaddam et al. | Compact beamforming network for producing multiple orthogonal beams in a limited field of view phased array antenna |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |