CN111524952B - Display substrate, preparation method thereof and display device - Google Patents

Abstract

A display substrate, comprising: the flexible substrate is provided with a plurality of island regions, a plurality of hole regions and bridge regions for connecting adjacent island regions, wherein the island regions are separated from one another; and a packaging isolation region is arranged in the bridge region adjacent to the hole region or the bridge region and the island region adjacent to the hole region. The encapsulation barrier region includes: a first structural layer, an organic insulating layer, and a first inorganic encapsulation layer stacked on the flexible substrate; the first structural layer is provided with a limiting groove area, and the limiting groove area comprises at least one limiting groove; the organic insulating layer and the first inorganic packaging layer cover the limiting groove area to form a dam.

Description

Display substrate, preparation method thereof and display device

Technical Field

The present disclosure relates to display technologies, and particularly to a display substrate, a method for manufacturing the same, and a display device.

Background

Organic electroluminescent Display (OLED) substrates gradually become the mainstream of Display fields by virtue of their excellent properties such as low power consumption, high color saturation, wide viewing angle, thin thickness, and flexibility, and can be widely applied to terminal products such as smart phones, tablet computers, televisions, and the like. Among them, flexible OLED products are the most prominent, and gradually become the mainstream of OLED display because they can satisfy various special structures.

With the development of flexible processes, there is a gradual transition from bending (Bendable), bending (Foldable), to elastic flexibility (Stretchable). Flexible stretchable displays have received a great deal of attention from the market due to their wide application space, and the development of flexible stretchable displays has faced many technical challenges.

Disclosure of Invention

The disclosure provides a display substrate, a preparation method thereof and a display device.

In one aspect, the present disclosure provides a display substrate, comprising: the flexible substrate is provided with a plurality of island regions, a plurality of hole regions and bridge regions for connecting adjacent island regions, wherein the island regions are separated from one another; a packaging isolation region is arranged in a bridge region adjacent to the hole region or in a bridge region and an island region adjacent to the hole region; the encapsulation barrier region comprises: a first structural layer, an organic insulating layer, and a first inorganic encapsulation layer stacked on the flexible substrate; the first structural layer is provided with a limiting groove area, and the limiting groove area comprises at least one limiting groove; the organic insulating layer and the first inorganic packaging layer cover the limiting groove area to form a dam.

In another aspect, the present disclosure provides a display device comprising the display substrate as described above.

In another aspect, the present disclosure provides a method for manufacturing a display substrate, including: forming a plurality of island regions, a plurality of hole regions and a bridge region connecting adjacent island regions, which are spaced apart from each other, on a flexible substrate; wherein an encapsulation barrier region is formed at the bridge region adjacent to the aperture region or at the bridge and island regions adjacent to the aperture region, the encapsulation barrier region comprising: a first structural layer, an organic insulating layer, and a first inorganic encapsulation layer stacked on the flexible substrate; the first structural layer is provided with a limiting groove area, and the limiting groove area comprises at least one limiting groove; the organic insulating layer and the first inorganic packaging layer cover the limiting groove area to form a dam.

According to the display substrate provided by the disclosure, the limiting groove area is formed at the position adjacent to the hole area, and the dam for blocking the organic packaging layer is formed in the limiting groove area, so that the firmness of the dam can be improved, and the packaging reliability of the display substrate is improved.

Additional features and advantages of the disclosure will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by the practice of the disclosure. Other advantages of the disclosure may be realized and attained by the instrumentalities and combinations particularly pointed out in the specification and the drawings.

Drawings

The accompanying drawings are included to provide an understanding of the disclosed embodiments, and are incorporated in and constitute a part of this specification, illustrate embodiments of the disclosure and together with the example serve to explain the principles of the disclosure.

FIG. 1 is a schematic diagram of a flexible display substrate;

fig. 2 is a schematic structural diagram of a display substrate according to at least one embodiment of the disclosure;

FIG. 3 is a schematic cross-sectional view taken along the line P-P in FIG. 2;

FIG. 4 is a schematic diagram illustrating an active layer pattern formed according to at least one embodiment of the present disclosure;

FIG. 5 is a schematic diagram of a gate electrode and a connection line pattern formed in accordance with at least one embodiment of the present disclosure;

FIG. 6 is a schematic diagram illustrating a capacitor electrode pattern formed according to at least one embodiment of the present disclosure;

FIG. 7 is a schematic view of a third insulating layer pattern formed according to at least one embodiment of the present disclosure;

FIG. 8 is an illustration of one exemplary shape of a retaining groove region in accordance with at least one embodiment of the present disclosure;

FIG. 9 is an illustration of another exemplary shape of a retaining groove region in accordance with at least one embodiment of the present disclosure;

fig. 10 is a schematic diagram of a source electrode, a drain electrode and a barrier structure patterned according to at least one embodiment of the disclosure;

fig. 11 is a diagram illustrating an exemplary shape of a barrier structure in accordance with at least one embodiment of the present disclosure;

FIG. 12 is a schematic view of a fourth insulating layer pattern formed according to at least one embodiment of the present disclosure;

FIG. 13 is a schematic view of a cathode pattern formed in accordance with at least one embodiment of the present disclosure;

FIG. 14 is a schematic view of a second inorganic encapsulation layer pattern formed in accordance with at least one embodiment of the present disclosure;

FIG. 15 is a schematic view of another structure of a display substrate according to at least one embodiment of the present disclosure;

FIG. 16 is a cross-sectional view taken along line Q-Q of FIG. 15;

fig. 17 is a partial cross-sectional structure diagram of a display substrate according to at least one embodiment of the disclosure.

Detailed Description

The present disclosure describes embodiments, but the description is illustrative rather than limiting and it will be apparent to those of ordinary skill in the art that many more embodiments and implementations are possible within the scope of the embodiments described in the present disclosure. Although many possible combinations of features are shown in the drawings and discussed in the embodiments, many other combinations of the disclosed features are possible. Any feature or element of any embodiment may be used in combination with or instead of any other feature or element in any other embodiment, unless expressly limited otherwise.

The present disclosure includes and contemplates combinations of features and elements known to those of ordinary skill in the art. The embodiments, features and elements of the present disclosure that have been disclosed may also be combined with any conventional features or elements to form unique aspects as defined by the claims. Any feature or element of any embodiment may also be combined with features or elements from other aspects to form yet another unique aspect as defined by the claims. Thus, it should be understood that any of the features shown or discussed in this disclosure may be implemented individually or in any suitable combination. Accordingly, the embodiments are not to be restricted except in light of the attached claims and their equivalents. Furthermore, one or more modifications and changes may be made within the scope of the appended claims.

Further, in describing representative embodiments, the specification may have presented a method or process as a particular sequence of steps. However, to the extent that the method or process does not rely on the particular order of steps set forth herein, the method or process should not be limited to the particular sequence of steps described. Other orders of steps are possible as will be understood by those of ordinary skill in the art. Therefore, the particular order of the steps set forth in the specification should not be construed as limitations on the claims. Further, the claims directed to the method or process should not be limited to the performance of their steps in the order written, and one skilled in the art can readily appreciate that the sequences may be varied and still remain within the spirit and scope of the embodiments of the present disclosure.

In the drawings, the size of the constituent elements, the thickness of the layers, or the regions may be exaggerated for clarity. Therefore, one mode of the present disclosure is not necessarily limited to the dimensions, and the shape and size of each component in the drawings do not reflect a true scale. Further, the drawings schematically show ideal examples, and one embodiment of the present disclosure is not limited to the shapes, numerical values, and the like shown in the drawings.

Unless defined otherwise, technical or scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. In the present disclosure, "a plurality" may mean two or more numbers. The word "comprising" or "comprises", and the like, means that the element or item preceding the word comprises the element or item listed after the word and its equivalent, but does not exclude other elements or items.

In the present disclosure, the terms "connected," "coupled," or "connected," and the like, are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "electrically connected" includes the case where the constituent elements are connected together by an element having some kind of electrical action. The "element having a certain electric function" is not particularly limited as long as it can transmit and receive an electric signal between connected components. Examples of the "element having some kind of electric function" include not only an electrode and a wiring but also a switching element such as a transistor, a resistor, an inductor, a capacitor, another element having one or more functions, and the like.

In the present disclosure, a transistor refers to an element including at least three terminals of a gate electrode, a drain electrode, and a source electrode. The transistor has a channel region between a drain electrode (a drain electrode terminal, a drain region, or a drain electrode) and a source electrode (a source electrode terminal, a source region, or a source electrode), and current can flow through the drain electrode, the channel region, and the source electrode. In the present disclosure, the channel region refers to a region through which current mainly flows.

In the case of using transistors of opposite polarities or in the case where the direction of current flow during circuit operation changes, the functions of the "source electrode" and the "drain electrode" may be interchanged. Therefore, in the present disclosure, "source electrode" and "drain electrode" may be interchanged with each other. Illustratively, the thin film transistor used in the present disclosure may be a low temperature polysilicon thin film transistor or an Oxide thin film transistor. The thin film transistor may be a P-type transistor or may be an N-type transistor.

In the present disclosure, "parallel" means a state in which an angle formed by two straight lines is-10 ° or more and 10 ° or less, and therefore, includes a state in which the angle is-5 ° or more and 5 ° or less. The term "perpendicular" means a state in which an angle formed by two straight lines is 80 ° or more and 100 ° or less, and therefore includes a state in which an angle is 85 ° or more and 95 ° or less.

In the present disclosure, "film" and "layer" may be interchanged with one another. For example, the "conductive layer" may be sometimes replaced with a "conductive film". Similarly, the "insulating film" may be replaced with an "insulating layer".

To maintain the following description of the embodiments of the present disclosure clear and concise, a detailed description of some known functions and components may be omitted from the present disclosure. The drawings of the embodiments of the disclosure only relate to the structures related to the embodiments of the disclosure, and other structures can refer to general designs.

Fig. 1 is a schematic view of a flexible display substrate. The flexible display substrate shown in fig. 1 is in a stretched state. As shown in fig. 1, the flexible display substrate may include: a flexible substrate may be provided with a plurality of island regions a, a plurality of hole regions c, and bridge regions b connecting adjacent island regions a, which are spaced apart from each other. Wherein, the island region a can be used for image display, the hole region c can be used for providing a deformation space when stretching, and the bridge region b can be used for wiring and transmitting pulling force. In order to reduce the risk of water vapor invading the flexible display substrate along the corresponding region due to the local packaging film, the bridge region and the island region need to be integrally packaged. The encapsulation film layer of the flexible display substrate may have an inorganic-organic stacked structure, such as an inorganic/organic/inorganic three-layer structure or an inorganic/organic/inorganic five-layer structure. Among them, when forming the organic encapsulation film layer, it is generally realized by using an inkjet printing (IJP) process. When the bridge area is packaged, a Dam (Dam) for blocking the flow of the IJP solution is formed at the edge position of the bridge area. However, since the edge portion of the bridge region is generally a hole region with a deep opening, the dam blocking the flow of the IJP solution is very easy to fall off (Peeling), so that the organic encapsulating film layer cannot be encapsulated normally.

The embodiment of the disclosure provides a display substrate, a preparation method thereof and a display device, which can realize effective encapsulation of an organic encapsulation film layer, so that the overall encapsulation reliability of the display substrate can be improved.

An embodiment of the present disclosure provides a display substrate, including: a flexible substrate; the flexible substrate is provided with a plurality of islands spaced apart from each other, a plurality of hole regions, and a bridge region connecting adjacent islands. And an encapsulation barrier region is arranged in the bridge region adjacent to the hole region or the bridge region and the island region adjacent to the hole region. The encapsulation barrier region includes: the organic light emitting device comprises a first structural layer, an organic insulating layer and a first inorganic packaging layer which are stacked on a flexible substrate. The first structural layer is provided with a limiting groove area, and the limiting groove area comprises at least one limiting groove. The organic insulating layer and the first inorganic packaging layer cover the limiting groove area to form a dam. The dam formed by the organic insulating layer and the first inorganic encapsulation layer covering the limiting groove region can be used for blocking the organic encapsulation layer.

In some examples, the aperture region may be located between a plurality of bridge regions, i.e., the aperture region is surrounded by bridge regions, with only the bridge regions adjacent to the aperture region. In this example, an encapsulation barrier region may be provided at the bridge region adjacent to the aperture region.

In some examples, the aperture region may be located between the island region and the bridge region, i.e., the aperture region may be surrounded by the bridge region and the island region, both of which are adjacent to the aperture region. In this example, encapsulation barrier regions may be provided at the bridge and island regions adjacent to the aperture region.

In some examples, the first structural layer encapsulating the barrier region may include: a Barrier (Barrier) Layer, a Buffer (Buffer) Layer, one or two Gate Insulation (GI) layers, and an Interlayer Insulation Layer (ILD) Layer sequentially formed on the flexible substrate. The organic insulating layer encapsulating the barrier region may include: a Planarization Layer (PLN) and a Pixel Definition Layer (PDL) sequentially formed on the interlayer insulating Layer, or may include only the Pixel Definition Layer. The first inorganic encapsulation layer encapsulating the barrier region may be a first inorganic film layer of the encapsulation film layers of the inorganic-organic stack structure of the display substrate. However, the present embodiment is not limited to this.

This embodiment is through setting up spacing groove district with the neighbouring encapsulation separation region in hole region to cover spacing groove district through organic insulating layer and first inorganic encapsulation layer and form the dam, can improve the fastness of dam, when forming organic encapsulation rete through the IJP technology, can avoid causing the IJP solution to spill over or similar problem, thereby improve display substrate's whole encapsulation reliability.

In some exemplary embodiments, the spacing groove region may comprise a plurality of spacing grooves, and the depth of the spacing groove distal from an adjacent aperture region may be greater than the depth of the spacing groove proximal to an adjacent aperture region. In some examples, the depth of the plurality of spacing grooves may gradually decrease in a direction from the encapsulation blocking region to the adjacent aperture region. For example, when the encapsulation blocking area is provided in the bridge area, the depths of the plurality of limiting grooves may gradually decrease from the center of the bridge area to the direction of the hole area. In some examples, the depth of the spacing groove may range from 0.1 to 2 microns. However, the present embodiment is not limited to this. Can provide further spacing and fixed action to the dam through setting up a plurality of spacing grooves to improve the fastness of dam.

In some exemplary embodiments, the width of the stopper groove region may be less than or equal to 20 micrometers in a direction from the encapsulation barrier region to the adjacent aperture region and perpendicular to the encapsulation barrier region. In some examples, when the encapsulation barrier region is provided at the bridge region, the influence on the entire bridge region width can be reduced by limiting the width of the stopper groove region to within 20 micrometers.

In some exemplary embodiments, the spacing groove may be a discontinuous structure including a plurality of rectangular patterns, or the spacing groove may have a zigzag or comb shape. However, this embodiment is not limited to this. In some examples, the retention groove may have a continuous shape, or alternatively, may have a non-continuous shape. In some examples, the shape of the plurality of retaining grooves may be the same or different.

In some exemplary embodiments, the encapsulation barrier region may further include: and the blocking structure is arranged on the first structural layer and is positioned on one side of the limiting groove region close to the adjacent hole region. In the exemplary embodiment, the dam can be further limited and fixed by arranging the blocking structure at the periphery of the limiting groove region, so that the firmness of the dam is further improved.

In some exemplary embodiments, the barrier structure may be disposed in the same material as the source and drain electrode layers of the island region. The barrier structure is prepared synchronously with the source drain electrode layer, so that the preparation process of the display substrate can be simplified.

In some exemplary embodiments, a width of a contact surface of the first inorganic encapsulation layer with the barrier structure may be greater than or equal to 2 micrometers in a direction from the encapsulation barrier region to the adjacent hole region and perpendicular to the encapsulation barrier region. Better sealing performance can be achieved by contacting the first inorganic packaging layer with the barrier structure and ensuring a certain contact width.

In some exemplary embodiments, the width of the barrier structure may be less than or equal to 4 microns in a direction from the encapsulation barrier region to the adjacent aperture region and perpendicular to the encapsulation barrier region. In some examples, by limiting the width of the barrier structure to within 4 microns when the bridge region is provided with an encapsulation barrier region, the effect on the overall bridge region width may be reduced.

In some exemplary embodiments, the blocking structure may be a discontinuous structure including a plurality of rectangular patterns, or the blocking structure may have a zigzag or comb shape. However, this embodiment is not limited to this. In some examples, the barrier structure may have a continuous shape, or alternatively, may have a discontinuous shape. In some examples, the shape of the barrier structures within the encapsulation barrier area of different bridge region arrangements may be the same or different.

Fig. 2 is a schematic structural diagram of a display substrate according to at least one embodiment of the disclosure. Fig. 3 is a schematic cross-sectional view taken along the direction P-P in fig. 2. As shown in fig. 2, the planar structure of the display substrate provided by the present exemplary embodiment may include a plurality of island regions a distributed in an array and spaced apart from each other, bridge regions B connecting adjacent island regions a to each other, and hole regions C between adjacent bridge regions B. The island region A can be used for image display, the hole region C can be used for providing a deformation space during stretching and forming a hole for transmitting light, and the bridge region B can be used for routing and transmitting pulling force. Each island region a may include one or more light emitting cells, and each light emitting cell may serve as one sub-pixel. Three light emitting units emitting light of different colors (e.g., red, green, blue) or four light emitting units emitting light of different colors (e.g., red, green, blue, white) may constitute one pixel unit.

Each island a may be rectangular or square in a plane parallel to the substrate, which is not limited in this embodiment. The aperture region C located between adjacent bridge regions B may be composed of a plurality of micro-grooves or micro-holes penetrating the flexible substrate. The hole region C may be L-shaped, or a plurality of L-shaped connected shapes, such as L-shaped ┙ font, T-shaped, etc., and the width of the hole region C may range from 10 μm to 500 μm, which is not limited in this embodiment. The bridge region B is located between the island region A and the hole region C, or between adjacent hole regions C, and is connected to the adjacent island region A. The bridge region B can be L-shaped, or a plurality of L-shaped connected shapes, such as L-shaped ┙ shape, T-shaped shape and the like. The width of the bridge region B may range from 10 μm to 500 μm, and the embodiment is not limited.

In a plane parallel to the substrate, the bridge region B between the island region a and the hole region C may include: a routing region B1 located in the middle region of bridge region B and a package barrier region B2 disposed at the edge position adjacent to the aperture region. The bridge region B between adjacent hole regions C may include: the wiring area is positioned in the middle area of the bridge area B, and the packaging blocking area is positioned at the edge positions of two sides of the wiring area and is adjacent to the hole area C. In other words, the encapsulation barrier region provided at the edge position of the bridge region B may surround the aperture region C.

Each of the light emitting units in the island region a may include a driving structure layer and a light emitting structure layer stacked on the flexible substrate 10 in a plane perpendicular to the substrate. The driving structure layer may include a pixel driving circuit in which a plurality of Thin Film Transistors (TFTs) are combined. In some examples, the drive structure layer may include: an active layer 13 disposed on the barrier layer 11 and the buffer layer 12, a first insulating layer 14 covering the active layer 13, first and second gate electrodes 21 and 22 formed on the first insulating layer 14, a second insulating layer 15 covering the first and second gate electrodes 21 and 22, a capacitor electrode 23 formed on the second insulating layer 15, a third insulating layer 16 covering the capacitor electrode 23, a source electrode 24 and a drain electrode 25 formed on the third insulating layer 16, and a fourth insulating layer 17 covering the source electrode 24 and the drain electrode 25. The light emitting structure layer may include an anode 31, a pixel defining layer 32, an organic light emitting layer 33, and a cathode 34. The encapsulation film layer of the island a may include a first inorganic encapsulation layer 41, an organic encapsulation layer 42, and a second inorganic encapsulation layer 43, which are stacked.

In a plane perpendicular to the substrate, the trace area B1 of each bridge area B can include: the barrier layer 11, the buffer layer 12, and the first insulating layer 14, the connection line 26 formed on the first insulating layer 14, the second insulating layer 15 covering the connection line 26, the third insulating layer 16 formed on the second insulating layer 15, and the first inorganic encapsulation layer 41 and the organic encapsulation layer 42 sequentially formed on the third insulating layer 16 are sequentially stacked on the flexible substrate 10. Here, the connection line 26 may be used to realize signal communication between adjacent islands a, and signal communication between adjacent islands a may refer to signal communication between a light emitting unit in one island a and a light emitting unit in another adjacent island a. In some examples, the connection line 26 may connect gate lines in the adjacent island region a, or may connect data lines in the adjacent island region a.

In a plane perpendicular to the substrate, the encapsulation barrier region B2 of each bridge region B may include: a first structural layer disposed on the flexible substrate 10, a barrier structure 51 and an organic insulating layer formed on the first structural layer, a first inorganic encapsulation layer 41 covering the organic insulating layer and a portion of the barrier structure 51, and an organic encapsulation layer 42 covering a portion of the first inorganic insulating layer 41. The first structural layer may include a barrier layer 11, a buffer layer 12, a first insulating layer 14, a second insulating layer 15, and a third insulating layer 16 stacked on the flexible substrate 10. The third insulating layer 16 may have a first stopper groove T1 and a second stopper groove T2 formed thereon. The barrier structure 51 may be disposed in the same layer as the source electrode 24 and the drain electrode 25 of the island region a. The blocking structure 51 may be located on a side of the first stopper groove T1 near the aperture region C. The organic insulating layer may include a fourth insulating layer 17 covering the first and second stopper grooves T1 and T2, and a pixel defining layer 32 covering a portion of the fourth insulating layer 17 and a portion of the barrier structure 51.

The technical solution of this embodiment is further illustrated by an example of the manufacturing process of the display substrate of this exemplary embodiment, wherein the structural schematic diagrams are all cross-sectional schematic diagrams in the P-P direction in fig. 2. The "patterning process" in this embodiment includes processes of depositing a film, coating a photoresist, masking exposure, developing, etching, and stripping a photoresist, and is a well-known and well-established manufacturing process. The "photolithography process" referred to in this embodiment includes coating film coating, mask exposure, and development, and is a well-known and well-established production process. The deposition may be performed by known processes such as sputtering, evaporation, chemical vapor deposition, etc., the coating may be performed by known coating processes, and the etching may be performed by known methods, which are not limited herein.

The manufacturing process of the display substrate of the present exemplary embodiment may include the following steps.

(1) And (3) coating a flexible material on the glass carrier plate 1, and curing to form a film to form the flexible substrate 10. In the present exemplary embodiment, the thickness of the flexible substrate 10 may range from 5 μm to 30 μm. The flexible substrate 10 may be made of Polyimide (PI), polyethylene terephthalate (PET), or a surface-treated polymer film.

(2) Depositing a Barrier film on a flexible substrate 10 to form a Barrier (Barrier) layer 11 pattern; then depositing a Buffer film on the barrier layer 11 to form a Buffer (Buffer) layer 12 pattern; subsequently, an active layer film is deposited and patterned through a patterning process to form a pattern of an active layer 13 disposed on the barrier layer 11 in the island region a, as shown in fig. 4.

The barrier film may be made of an inorganic material such as silicon nitride (SiNx) or silicon oxide (SiOx), may be a single layer, or may have a multilayer structure of silicon nitride/silicon oxide. In the present exemplary embodiment, the barrier layer 11 may be used to improve the water oxygen resistance of the flexible substrate 10.

The buffer film may be made of an inorganic material such as silicon nitride (SiNx) or silicon oxide (SiOx), and may be a single layer or a multilayer structure of silicon nitride/silicon oxide.

In some examples, the barrier layer 11 of the bridge region B may be etched away, or subjected to a thinning process, i.e. by etching less of the corresponding thickness, or may be subjected to an opening patterning process, i.e. by etching to form a plurality of openings. Etching away the barrier layer of the bridge region B, thinning or opening the hole for patterning are all used for reducing the rigidity of the bridge region B so as to facilitate the stretching of the bridge region B. However, this embodiment is not limited to this.

(3) A first insulating film and a first metal film are sequentially deposited and patterned through a patterning process to form a first insulating layer 14 covering the entire flexible substrate 10 and a first gate electrode 21, a second gate electrode 22, a gate line (not shown) and a plurality of connection line 26 patterns disposed on the first insulating layer 14, as shown in fig. 5. The first gate electrode 21, the second gate electrode 22 and the gate line pattern are located in the island region a, and the plurality of connection line 26 patterns are located in the routing region B1 of the bridge region B.

The first insulating layer 14 may be made of silicon nitride (SiNx) or silicon oxide (SiOx), and may be a single layer or a multilayer structure of silicon nitride/silicon oxide. The first insulating layer 14 may also be referred to as a first gate insulating layer. After the patterning process, the first insulating layer 14 remains in the hole region C.

(4) A second insulating film and a second metal film are sequentially deposited and patterned through a patterning process to form a second insulating layer 15 covering the first gate electrode 21, the second gate electrode 22, the gate line and the plurality of connection lines 26 and a capacitor electrode 23 pattern disposed on the second insulating layer 15, as shown in fig. 6. The capacitor electrode 23 is located in the island a, and the position of the capacitor electrode 23 corresponds to the position of the second gate electrode 22, and the capacitor electrode 23 and the second gate electrode 22 may constitute a capacitor.

The second insulating layer 15 may be made of silicon nitride (SiNx) or silicon oxide (SiOx), and may be a single layer or a multilayer structure of silicon nitride/silicon oxide. The second insulating layer 15 may be referred to as a second gate insulating layer. After this patterning process, the first insulating layer 14 and the second insulating layer 15 remain in both the bridge region B and the hole region C.

(5) A third insulating film is deposited and patterned through a patterning process to form a third insulating layer 16 pattern, as shown in fig. 7. Two first via holes K1 are formed in the third insulating layer 16 of the island a, and the third insulating layer 16, the second insulating layer 15 and the first insulating layer 14 in the two first via holes K1 are etched away to expose the active layer 13, respectively. A first stopper groove T1 and a second stopper groove T2 are formed on the third insulating layer 16 of the encapsulation barrier region B2 of the bridge region B. The third insulating layer 16 and a portion of the second insulating layer 15 in the first and second stopper grooves T1 and T1 are etched away. The depth of the first stopper groove T1 may be less than the depth of the second stopper groove T2, i.e., the thickness of the second insulation layer 15 etched away in the second stopper groove T2 may be greater than the thickness of the second insulation layer 15 etched away in the first stopper groove T1. However, the present embodiment is not limited to this. In some examples, the depths of the first and second retaining grooves T1 and T2 may be the same. The depth ranges of the first and second limiting grooves T1 and T2 may be 0.1 to 2 micrometers, which is not limited in this embodiment. In some examples, the encapsulation barrier region B2 may form three or more than three limiting grooves arranged in parallel, and the embodiment is not limited.

A plurality of connection lines 26 spaced apart from each other on the first insulating layer 14, a second insulating layer 15 covering the plurality of connection lines 26, and a third insulating layer 16 disposed on the second insulating layer 15 are formed in the routing region B1 of the bridge region B. All film layers in the hole region C including the flexible substrate 10 are etched away.

The third insulating layer 16 may be made of silicon nitride (SiNx), silicon oxide (SiOx), or the like, and may be a single layer or a multilayer structure of silicon nitride/silicon oxide. The third insulating layer 16 may be referred to as an interlayer insulating layer.

Fig. 8 and 9 are exemplary diagrams of planar shapes of a limiting groove according to at least one embodiment of the disclosure. In some examples, each of the first and second restraint grooves T1 and T2 may be a discontinuous structure including a plurality of rectangular patterns. As shown in fig. 8, the first and second stopper grooves T1 and T2 may have the same shape, and each of the first and second stopper grooves T1 and T2 may have a discontinuous structure including four rectangular patterns. In some examples, the shapes of the first and second retaining grooves T1 and T2 may be different. In some examples, the first and second catching grooves T1 and T2 may be a continuous structure. As shown in fig. 9, the first and second catching grooves T1 and T2 may have different shapes; the first position-limiting groove T1 may be a zigzag type, and the second position-limiting groove T2 may be a comb type. However, this embodiment is not limited to this.

In some examples, a width of a restriction groove region including a plurality of restriction grooves may be less than or equal to 20 micrometers in a direction from the encapsulation barrier region B2 to the adjacent aperture region C and perpendicular to the encapsulation barrier region B2. For example, the limiting groove region includes a first limiting groove T1 and a second limiting groove T2, and the distance between the end of the first limiting groove T1 close to the hole region C and the end of the second limiting groove T2 far from the hole region C in the direction perpendicular to the package blocking region B2 may be less than or equal to 20 micrometers.

(6) A third metal film is deposited and patterned through a patterning process to form a pattern of a source electrode 24, a drain electrode 25, and a data line (not shown) in the island region a and a pattern of a barrier structure 51 in the encapsulation barrier region B2 of the bridge region B, as shown in fig. 10. The source electrode 24 and the drain electrode 25 are connected to the active layer 13 through the first vias K1, respectively. In this way, the active layer 13, the first gate electrode 21, the source electrode 24, and the drain electrode 25 may constitute a driving thin film transistor, the second gate electrode 22 and the capacitance electrode 23 may constitute a storage capacitance, and the driving thin film transistor, the storage capacitance, and other thin film transistors may constitute a driving structure layer.

In the present exemplary embodiment, the blocking structure 51 may be used to provide a spacing and fixing function without establishing electrical connection with other electrodes or traces. However, the present embodiment is not limited to this. In some examples, the blocking structure 51 may be designed as a connection line for transmitting electrical signals based on the functions of limiting and fixing.

It should be noted that the island region a and the bridge region B around the island region a are both provided with two-directional connection lines, the connection line in one direction at least includes a gate connection line, which is disposed on the same layer as the gate line and formed by the same patterning process, and the connection line in the other direction at least includes a voltage connection line and a data connection line, which are disposed on the same layer as the data line and formed by the same patterning process.

Fig. 11 is a plan view illustrating a barrier structure according to at least one embodiment of the present disclosure. In some examples, the barrier structure 51 may be a discontinuous structure including a plurality of rectangular patterns. As shown in fig. 11(b), the barrier structure 51 may be a discontinuous structure including three rectangular patterns. In some examples, the barrier structure 51 may be a continuous structure. As shown in fig. 11(a), the blocking structure 51 may be a zigzag type. As shown in fig. 11(C), the blocking structure 51 may be a comb type, and comb teeth are close to the aperture region C. As shown in fig. 11(d), the blocking structure 51 may be comb-shaped, with the comb teeth away from the aperture region C. However, the present embodiment is not limited to this.

In some examples, the width of the barrier structure 51 may be less than or equal to 4 microns in a direction from the encapsulation barrier region B2 to the adjacent aperture region C and perpendicular to the encapsulation barrier region B2. However, the present embodiment is not limited to this.

(7) A fourth insulating film is coated on the flexible substrate 10 on which the aforementioned pattern is formed, and a fourth insulating layer 17 pattern is formed through a photolithography process of mask exposure development, as shown in fig. 12. The fourth insulating layer 17 covers the source electrode 24 and the drain electrode 25 in the island region a. A second via hole K2 is formed in the fourth insulating layer 17 of the island a, and the second via hole K2 exposes the drain electrode 25 of the driving tft. The fourth insulation layer 17 at the encapsulation blocking area B2 of the bridge area B covers the first stopper groove T1 and the second stopper groove T2, and is adjacent to the blocking structure 51. In some examples, the fourth insulating layer 17 may cover a portion of the barrier structure 51.

The fourth insulating layer 17 may be made of polyimide, acrylic, or polyethylene terephthalate. The fourth insulating layer 17 may be referred to as a Planarization Layer (PLN). In the photolithography process, the trace region B1 of the bridge region B and the fourth insulating layer 17 of the hole region C are removed, the trace region B1 exposes the third insulating layer 16, and all the film layers including the flexible substrate 10 in the hole region C are removed.

In the present exemplary embodiment, the fourth insulation layer 17 encapsulating the blocking region B2 may increase adhesion and improve the blocking and fixing ability by filling the first and second blocking grooves. Moreover, the blocking structure 51 is located on the side of the fourth insulation layer 17 of the encapsulation blocking region B2 close to the hole region, and can further limit and fix the fourth insulation layer 17 in the encapsulation blocking region B2.

(8) A transparent conductive film is deposited on the flexible substrate 10 on which the foregoing pattern is formed, and the transparent conductive film is patterned through a patterning process to form a pattern of the anode electrode 31 in the island region a, and the anode electrode 31 is connected to the drain electrode 25 through the second via hole K2, as shown in fig. 13.

The transparent conductive film may be Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO). After the composition process, the bridge region B and the hole region C are not changed.

(9) A Pixel definition film is coated on the flexible substrate 10 where the foregoing pattern is formed, and a Pixel Definition Layer (PDL) 32 pattern is formed by a photolithography process, as shown in fig. 13. The pixel defining layer 32 of the island region a defines an opening region exposing the anode electrode 31 at each light emitting unit. The pixel defining layer 32 of the encapsulation barrier region B2 of the bridge region B covers part of the barrier structure 51 and part of the fourth insulating layer 17. In the photolithography process, the pixel definition layer in the trace region B1 and the hole region C of the bridge region B may be removed, the third insulating layer 16 is exposed in the trace region B1, and all the film layers including the flexible substrate 10 in the hole region C are removed.

The pixel definition film may be made of polyimide, acrylic, or polyethylene terephthalate.

(10) An organic light emitting layer 33 and a cathode 34 are patterned in this order on the flexible substrate on which the aforementioned patterns are formed, as shown in fig. 13. The organic light emitting layer 33 and the cathode 34 are formed in the island region a, the organic light emitting layer 33 is formed in an opening region defined by the pixel defining layer 32 to be connected to the anode 31, and the cathode 34 is disposed on the organic light emitting layer 33 and the pixel defining layer 32. Among them, the organic light emitting layer 33 may include an emission layer (EML). In some examples, the organic light emitting layer may include a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer sequentially disposed to improve efficiency of injecting electrons and holes into the light emitting layer. In some examples, the cathode may employ one of metal materials such as magnesium (Mg), silver (Ag), aluminum (Al), copper (Cu), lithium (Li), or an alloy of the above metals. The organic light-emitting layer and the cathode may be formed by vapor deposition, inkjet printing, or the like.

(11) Depositing an inorganic material on the flexible substrate on which the patterns are formed, and patterning the inorganic material through a patterning process to form a first inorganic encapsulation layer 41 pattern; the organic encapsulation layer 42 may then be patterned by an inkjet printing (IJP) process; an inorganic material may then be deposited and the second inorganic encapsulation layer 43 patterned by a patterning process, as shown in fig. 14. In the present exemplary embodiment, the first inorganic encapsulation layer 41, the organic encapsulation layer 42, and the second inorganic encapsulation layer 43 form an encapsulation film layer of the display substrate, i.e., the encapsulation film layer of the display substrate is an inorganic/organic/inorganic three-layer structure. The inorganic material may be silicon oxide, aluminum oxide, silicon nitride, silicon oxynitride, or the like, and the organic material may be a flexible polymer material based on PET.

In the present exemplary embodiment, the island region a is formed with a first inorganic encapsulation layer 41, an organic encapsulation layer 42, and a second inorganic encapsulation layer 43, which are stacked. The trace area B1 of the bridge area B forms a first inorganic encapsulation layer 41 and an organic encapsulation layer 42 which are arranged in a stack. In the encapsulation barrier region B2 of the bridge region B, the first inorganic encapsulation layer 41 may cover the fourth insulating layer 17, the pixel defining layer 32 and a portion of the blocking structure 51, forming a dam to block the organic encapsulation layer 42.

In the present exemplary embodiment, the width of the contact surface of the first inorganic encapsulation layer 41 and the barrier structure 51 in the direction from the encapsulation barrier region B2 to the adjacent aperture region C and perpendicular to the encapsulation barrier region B2 may be greater than or equal to 2 micrometers to achieve better sealability.

In this exemplary embodiment, can make the dam have stronger fastness through spacing groove and barrier structure, avoid taking place to drop at the inkjet printing in-process, moreover, can provide sufficient height for the dam through pixel definition layer and first inorganic encapsulation layer and realize blockking the mobile material of inkjet printing in-process to can improve organic encapsulation layer's encapsulation reliability.

In some examples, the second inorganic encapsulation layer 43 may cover the entire bridge region B. However, this embodiment is not limited to this.

(12) Finally, the glass carrier 1 is peeled off to form the stretchable display substrate of the present exemplary embodiment, as shown in fig. 3.

The display substrate provided by the exemplary embodiment can realize the integrated encapsulation of the bridge region and the island region, has a good encapsulation effect, and can effectively prevent water and oxygen from entering the organic light emitting layer.

The structure shown in the present exemplary embodiment and the process for manufacturing the same are merely an exemplary illustration. In some examples, the corresponding structures may be changed and the patterning process may be added or reduced according to actual needs. For example, the display substrate may be a top-emitting structure, or may be a bottom-emitting structure; the thin film transistor can be a top gate structure or a bottom gate structure; the thin film transistor can be a single-gate structure or a double-gate structure; the thin film transistor may be an amorphous silicon (a-Si) thin film transistor, a Low Temperature Polysilicon (LTPS) thin film transistor, or an Oxide (Oxide) thin film transistor. For another example, other electrodes, leads, and structural film layers may be further disposed in the driving structure layer and the light emitting structure layer, and this embodiment is not limited herein.

Fig. 15 is a schematic structural diagram of a display substrate according to at least one embodiment of the disclosure. Fig. 16 is a cross-sectional view in the direction of Q-Q in fig. 15. As shown in fig. 15, the planar structure of the display substrate provided by the present exemplary embodiment may include a plurality of island regions a distributed in an array and spaced apart from each other, a bridge region B connecting adjacent island regions a to each other, and a hole region C between the adjacent island regions a and the bridge region B. In this example, the hole region C may be located between the island region a and the bridge region C, or between adjacent bridge regions C. Island region a may include a light-emitting region a1 and a package barrier region a2 on a side of light-emitting region a1 near aperture region C. Island B may include trace area B1 in the middle and package barrier areas B2 on both sides of trace area B1 near hole area C.

In the present exemplary embodiment, each light emitting cell within the light emitting region a1 of the island region a may include a driving structure layer and a light emitting structure layer stacked on the flexible substrate 10 in a plane perpendicular to the substrate. The driving structure layer may include: an active layer 13 disposed on the barrier layer 11 and the buffer layer 12, a first insulating layer 14 covering the active layer 13, first and second gate electrodes 21 and 22 formed on the first insulating layer 14, a second insulating layer 15 covering the first and second gate electrodes 21 and 22, a capacitor electrode 23 formed on the second insulating layer 15, a third insulating layer 16 covering the capacitor electrode 23, a source electrode 24 and a drain electrode 25 formed on the third insulating layer 16, and a fourth insulating layer 17 covering the source electrode 24 and the drain electrode 25. The light emitting structure layer may include an anode 31, a pixel defining layer 32, an organic light emitting layer 33, and a cathode 34. The encapsulation film layer of the light emitting region a1 may include a first inorganic encapsulation layer 41, an organic encapsulation layer 42, and a second inorganic encapsulation layer 43 that are stacked.

In the present exemplary embodiment, the encapsulation barrier region a1 of the island region a may include, in a plane perpendicular to the substrate, a first structural layer disposed on the flexible substrate 10, the barrier structure 51 and the organic insulating layer formed on the first structural layer, a first inorganic encapsulation layer 41 covering the organic insulating layer and a portion of the barrier structure 51, an organic encapsulation layer 42 covering a portion of the first inorganic insulation layer 41, and a second inorganic encapsulation layer 43 covering the first inorganic encapsulation layer 41 and the organic encapsulation layer 42. The first structural layer may include a barrier layer 11, a buffer layer 12, a first insulating layer 14, a second insulating layer 15, and a third insulating layer 16 stacked on the flexible substrate 10. Two limiting grooves may be formed on the third insulating layer 16. The barrier structure 51 may be disposed at the same layer as the source electrode 24 and the drain electrode 25 of the light-emitting region a 1. The blocking structure 51 may be located on one side of the two retaining grooves adjacent to the aperture region C. The organic insulating layer may include a fourth insulating layer 17 covering the two stopper grooves, and a pixel defining layer 32 covering a portion of the fourth insulating layer 17 and a portion of the barrier structure 51.

The structure of the bridge region and the manufacturing process of the display substrate in this exemplary embodiment can refer to the description of the foregoing embodiments, and therefore, the description thereof is omitted here.

Fig. 17 is a schematic cross-sectional view of a display substrate according to at least one embodiment of the present disclosure. Only the cross-sectional structure of the bridge region B and the adjacent hole region C is illustrated in fig. 17. In the present exemplary embodiment, the bridge region B may include: a trace region B1 located at the middle position, and a package blocking region B2 located at the periphery of the trace region B1 and adjacent to the hole region C. In this example, routing area B1 includes: a plurality of posts wrapping the connecting wire 26 may form a groove K therebetween. The pillar includes a barrier layer 11 disposed on a flexible substrate 10, a buffer layer 12, a first insulating layer 14, a connection line 26 disposed on the first insulating layer 14, and a second insulating layer 15 disposed on the first insulating layer 14 and wrapping the connection line 26. The barrier layer 11, the buffer layer 12, the first insulating layer 14, and the second insulating layer 15 are removed in the groove K to expose the flexible substrate 10. The fourth insulating layer 17 covers the plurality of pillars and the grooves K. The plurality of pillars may form a Crack Dam (Crack Dam), thereby improving stretchability of the display substrate.

For the rest of the structure of the display substrate of the present exemplary embodiment, reference may be made to the description of the foregoing embodiments, and therefore, the description thereof is omitted here.

At least one embodiment of the present disclosure further provides a method for manufacturing a display substrate, including: forming a plurality of island regions, a plurality of hole regions and a bridge region connecting adjacent island regions, which are spaced apart from each other, on a flexible substrate; wherein an encapsulation barrier region is formed at the bridge region adjacent to the aperture region or at the bridge region and the island region adjacent to the aperture region, the encapsulation barrier region comprising: a first structural layer, an organic insulating layer, and a first inorganic encapsulation layer stacked on the flexible substrate; the first structural layer is provided with a limiting groove area, and the limiting groove area comprises at least one limiting groove; the organic insulating layer and the first inorganic packaging layer cover the limiting groove area to form a dam.

In some exemplary embodiments, forming the encapsulation barrier region at the bridge region adjacent to the aperture region or the bridge region and the island region adjacent to the aperture region may include: sequentially forming a barrier layer, a buffer layer, a gate insulating layer and an interlayer insulating layer which are stacked on a flexible substrate, and forming at least one limiting groove on the interlayer insulating layer of a packaging barrier region; forming a source electrode, a drain electrode and a blocking structure on the interlayer insulating layer synchronously, wherein the source electrode and the drain electrode are formed in the island region, and the blocking structure is formed in the packaging blocking region and is positioned on one side, close to the adjacent hole region, of the limiting groove; forming a planarization layer covering the limiting groove in the packaging isolation area; forming a pixel definition layer in the packaging barrier region, wherein the pixel definition layer of the packaging barrier region covers at least part of the planarization layer and part of the barrier structure; and forming a first inorganic packaging layer in the packaging barrier region, wherein the first inorganic packaging layer of the packaging barrier region covers the pixel definition layer and the planarization layer and covers part of the barrier structure.

The detailed preparation process of the preparation method of the display substrate of the present exemplary embodiment has been described in detail in the foregoing embodiments, and is not repeated here.

In the preparation process of this example embodiment, can make the dam have stronger fastness through forming spacing groove and block structure on the interlayer insulating layer, avoid taking place to drop in the inkjet printing in-process, moreover, can provide sufficient height for the dam through pixel definition layer and first inorganic encapsulation layer and realize blockking the mobile material of inkjet printing in-process to can improve organic encapsulation layer's encapsulation reliability.

In addition, the preparation process of the display substrate according to the exemplary embodiment can be implemented by using existing mature preparation equipment, the existing process is slightly improved, the preparation process can be well compatible with the existing preparation process, and the preparation process has the advantages of simplicity in process implementation, high production efficiency, low production cost, high yield and the like, and has a good application prospect.

The embodiment of the present disclosure further provides a display device, which includes the display substrate of the foregoing embodiment. The display device may be any product or component having a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, and a navigator, and may also be a product or component having a Virtual Reality (VR), Augmented Reality (AR), and Three-dimensional (3D) display function. The present embodiment is not limited to this.

In the description of the embodiments of the present disclosure, the terms "middle", "upper", "lower", "front", "rear", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, only for convenience in describing and simplifying the disclosure, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, should not be construed as limiting the disclosure.

Although the embodiments disclosed in the present disclosure are described above, the descriptions are only for the purpose of understanding the present disclosure, and are not intended to limit the present disclosure. It will be understood by those skilled in the art of the present disclosure that various changes in form and details may be made therein without departing from the spirit and scope of the disclosure, and that the scope of the disclosure is to be limited only by the terms of the appended claims.

Claims (13)

1. A display substrate, comprising: the flexible substrate is provided with a plurality of island regions, a plurality of hole regions and bridge regions, wherein the island regions are separated from one another; a packaging isolation region is arranged in a bridge region adjacent to the hole region or in a bridge region and an island region adjacent to the hole region;

the encapsulation barrier region comprises: a first structural layer, an organic insulating layer, and a first inorganic encapsulation layer stacked on the flexible substrate; the first structural layer is provided with a limiting groove area, and the limiting groove area comprises at least one limiting groove; the organic insulating layer and the first inorganic packaging layer cover the limiting groove region to form a dam; the first structural layer includes: the flexible substrate comprises a barrier layer, a buffer layer, one or two layers of gate insulating layers and an interlayer insulating layer which are sequentially formed on the flexible substrate; the organic insulating layer includes: a planarization layer and a pixel defining layer formed in this order on the interlayer insulating layer, or a pixel defining layer.

2. The display substrate according to claim 1, wherein the stopper groove region comprises a plurality of stopper grooves; the depth of the limiting groove far away from the adjacent hole area is larger than that of the limiting groove close to the adjacent hole area.

3. The display substrate of claim 2, wherein the depth of the limiting groove ranges from 0.1 to 2 μm.

4. The display substrate of claim 1, wherein the width of the dam groove region is less than or equal to 20 microns in a direction from the encapsulation barrier region to an adjacent aperture region and perpendicular to the encapsulation barrier region.

5. The display substrate according to claim 1, wherein the limiting groove is a discontinuous structure comprising a plurality of rectangular patterns, or the limiting groove is zigzag or comb-shaped.

6. The display substrate of claim 1, wherein the encapsulation barrier region further comprises: and the blocking structure is arranged on the first structural layer and is positioned on one side of the limiting groove area close to the adjacent hole area.

7. The display substrate of claim 6, wherein the blocking structure and the source/drain electrode layer of the island region are disposed in the same material layer.

8. The display substrate of claim 6, wherein the width of the contact surface of the first inorganic encapsulation layer and the barrier structure in a direction from the encapsulation barrier region to an adjacent hole region and perpendicular to the encapsulation barrier region is greater than or equal to 2 microns.

9. The display substrate of claim 6, wherein the barrier structures have a width of less than or equal to 4 microns in a direction from the encapsulation barrier region to an adjacent aperture region and perpendicular to the encapsulation barrier region.

10. The display substrate of claim 6, wherein the blocking structure is a discontinuous structure comprising a plurality of rectangular patterns, or the blocking structure is zigzag or comb-shaped.

11. A display device comprising the display substrate according to any one of claims 1 to 10.

12. A method for manufacturing a display substrate, comprising: forming a plurality of island regions, a plurality of hole regions and a bridge region connecting adjacent island regions, which are spaced apart from each other, on a flexible substrate; wherein an encapsulation barrier region is formed at a bridge region adjacent to the aperture region or at a bridge region and an island region adjacent to the aperture region, the encapsulation barrier region comprising: a first structural layer, an organic insulating layer, and a first inorganic encapsulation layer stacked on the flexible substrate; the first structural layer is provided with a limiting groove area, and the limiting groove area comprises at least one limiting groove; the organic insulating layer and the first inorganic packaging layer cover the limiting groove region to form a dam; the first structural layer includes: the flexible substrate comprises a barrier layer, a buffer layer, one or two layers of gate insulating layers and an interlayer insulating layer which are sequentially formed on the flexible substrate; the organic insulating layer includes: a planarization layer and a pixel defining layer sequentially formed on the interlayer insulating layer, or a pixel defining layer.

13. The method of claim 12, wherein forming an encapsulation barrier region in the bridge region adjacent to the aperture region or the bridge and island regions adjacent to the aperture region comprises:

sequentially forming a barrier layer, a buffer layer, a gate insulating layer and an interlayer insulating layer which are stacked on a flexible substrate, and forming at least one limiting groove on the interlayer insulating layer of the packaging barrier region; forming a source electrode, a drain electrode and a blocking structure on the interlayer insulating layer synchronously, wherein the source electrode and the drain electrode are formed in the island region, and the blocking structure is formed in the packaging blocking region and is positioned on one side of the limiting groove close to the adjacent hole region; forming a planarization layer covering the limiting groove in the packaging isolation area; forming a pixel definition layer in the packaging barrier region, wherein the pixel definition layer of the packaging barrier region covers at least part of the planarization layer and part of the barrier structure; and forming a first inorganic packaging layer in the packaging barrier region, wherein the first inorganic packaging layer of the packaging barrier region covers the pixel definition layer and the planarization layer and covers a part of the barrier structure.

Images