CN113471223B - Display substrate and display device - Google Patents
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- CN113471223B CN113471223B CN202110756579.4A CN202110756579A CN113471223B CN 113471223 B CN113471223 B CN 113471223B CN 202110756579 A CN202110756579 A CN 202110756579A CN 113471223 B CN113471223 B CN 113471223B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- Microelectronics & Electronic Packaging (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The application provides a display substrate and a display device, wherein the display substrate comprises: a first flexible substrate; a plurality of second flexible substrates disposed above the first flexible substrate at intervals; wherein each second flexible substrate comprises an island region and a bonding pad region arranged around the island region, and the thickness of at least part of the second flexible substrates of the bonding pad region is gradually reduced along the direction away from the island region; a display structure at least partially over the island; a pad at least partially over the pad region; and the connecting lines are positioned above the first flexible substrates and are arranged between two adjacent second flexible substrates. The thickness of the substrate at the island (display structure) position is thick, the thickness of the substrate at the connecting line (bridge) position is thin, and the thickness of at least part of the second flexible substrate at the bonding pad region is gradually reduced along the direction away from the island, so that the elastic modulus from the island position to the connecting line position (bridge) is smoothly transited, and the damage of the connecting line is avoided.
Description
Technical Field
The application relates to the technical field of display, in particular to a display substrate and a display device.
Background
An Organic Light-Emitting Diode (OLED) display is a display and illumination technology developed in recent years, and has advantages of high response, high contrast, flexibility, and the like, and is considered to have a wide application prospect. In the aspect of flexible display, the deformable and bendable characteristics of the OLED display device further show the advantages of the OLED display.
Stretchable display devices are receiving increasing attention as one of the important directions of development of flexible display products. In particular, an expandable display device manufactured to be capable of expanding/contracting in a specific direction and becoming various shapes by forming a display unit, a wire, or the like on a flexible substrate such as plastic as a flexible material is attracting attention as a next-generation display device. In the current stretchable display substrate, the problem of trace breakage caused by tensile stress is serious, and the display substrate is easy to fail.
Disclosure of Invention
The application provides a display substrate and a display device, which solve the technical problem that the display substrate is invalid due to the wiring damage of the stretchable display substrate in the prior art.
In a first aspect, the present application provides a display substrate comprising:
A first flexible substrate;
A plurality of second flexible substrates disposed above the first flexible substrate at intervals; each second flexible substrate comprises an island region and a bonding pad region arranged around the island region, and the thickness of at least part of the second flexible substrates positioned in the bonding pad region is gradually reduced along the direction away from the island region;
a display structure at least partially over the island;
a pad at least partially over the pad region;
The connecting lines are positioned above the first flexible substrates and are arranged between two adjacent second flexible substrates; the connecting wires are electrically connected with the bonding pads on the two adjacent second flexible substrates and are used for realizing the electrical connection of the display structures on the two adjacent second flexible substrates.
In some embodiments, in the display substrate, an orthographic projection of the display structure on the first flexible substrate overlaps with an orthographic projection of the pad on the first flexible substrate.
In some embodiments, the display substrate further includes:
And the first buffer layer is arranged between the first flexible substrate and the second flexible substrate.
In some embodiments, in the display substrate, the first buffer layer extends below the connection line.
In some embodiments, the display substrate further includes:
a second buffer layer located between the display structure and the second flexible substrate;
The second buffer layer extends to the lower portion of the bonding pad, and at least part of the thickness of the second buffer layer below the bonding pad gradually decreases along the direction away from the display structure.
In some embodiments, in the display substrate, the display structure includes a driving structure layer above the second flexible substrate, and a light emitting structure layer above the driving structure layer;
the driving structure layer comprises an active layer, a gate insulating layer, a gate layer, an interlayer insulating layer and a source drain metal layer which are sequentially stacked above the second flexible substrate.
In some embodiments, in the display substrate, a material of the pad is the same as a material of the gate layer or the source drain metal layer.
In some embodiments, in the display substrate, the gate insulating layer and/or the interlayer insulating layer extends to above the pad region;
wherein a thickness of at least a portion of the gate insulating layer and/or the interlayer insulating layer located above the pad region gradually decreases in a direction away from the island region.
In some embodiments, the display substrate further includes:
A flexible backing film positioned below the first flexible substrate;
wherein the modulus of elasticity of the flexible backing film is less than the modulus of elasticity of the first flexible substrate and the second flexible substrate.
In a second aspect, the present application provides a display device comprising a display substrate as claimed in any one of the first aspects.
By adopting the technical scheme, at least the following technical effects can be achieved:
The application provides a display substrate and a display device, wherein the display substrate comprises: a first flexible substrate; a plurality of second flexible substrates disposed above the first flexible substrate at intervals; wherein each second flexible substrate comprises an island region and a bonding pad region arranged around the island region, and the thickness of at least part of the second flexible substrates of the bonding pad region is gradually reduced along the direction away from the island region; a display structure at least partially over the island; a pad at least partially over the pad region; and the connecting lines are positioned above the first flexible substrates and are arranged between two adjacent second flexible substrates. The thickness of the flexible substrate at the island (display structure) position is thick, the thickness of the flexible substrate at the connecting line (bridge) position is thin, and at least part of the thickness of the second flexible substrate in the pad region is gradually reduced along the direction away from the island, so that the elastic modulus from the island position to the connecting line (bridge) is smoothly transited, the damage to the connecting line (wiring) caused by stress concentration when the display substrate is stretched is avoided, the stretching capability of the display substrate is greatly improved, and the product yield and reliability of the stretchable display substrate can be improved.
Drawings
The accompanying drawings are included to provide a further understanding of the application, and are incorporated in and constitute a part of this specification, illustrate the application and together with the description serve to explain, without limitation, the application. In the drawings:
FIG. 1 is a schematic top plan view of a display substrate according to an exemplary embodiment of the present application;
FIG. 2 is a schematic cross-sectional view of FIG. 1 along line A-A';
FIG. 3 is a schematic cross-sectional view of another display substrate according to an exemplary embodiment of the present application;
fig. 4 is a schematic cross-sectional structure of another display substrate according to an exemplary embodiment of the present application;
Fig. 5 is a schematic cross-sectional structure of another display substrate according to an exemplary embodiment of the present application;
FIG. 6 is a schematic cross-sectional view of another display substrate according to an exemplary embodiment of the present application;
FIG. 7 is a schematic cross-sectional view of another display substrate according to an exemplary embodiment of the present application;
FIG. 8 is a schematic flow chart of a method for manufacturing a display substrate according to an exemplary embodiment of the application;
Fig. 9 is a schematic cross-sectional view of a first intermediate structure formed by the relevant steps of a method for manufacturing a display substrate according to an exemplary embodiment of the present application;
Fig. 10 is a schematic cross-sectional view of a second intermediate structure formed by the relevant steps of a method for manufacturing a display substrate according to an exemplary embodiment of the present application;
Fig. 11 is a schematic cross-sectional view of a third intermediate structure formed by the relevant steps of a method for manufacturing a display substrate according to an exemplary embodiment of the present application;
The reference numerals are:
11-a first flexible substrate; 12-a first buffer layer; 13-a second flexible substrate; 131-island regions; 132-pad area; 14-a second buffer layer; 15-display structure; 1501-an active layer; 1502-a gate insulation layer; 1503-gate layer; 1504-gate wiring; 1505-an interlayer insulating layer; 1506-source drain metal layer; 1507-an organic planarizing layer; 1508-an anode layer; 1509-pixel definition layer; 1510-a light emitting layer; 1511-a cathode layer; 1512-packaging layer; 16-bonding pads; 17-connecting lines; 18-a flexible backing film; 19-glass substrate.
In the drawings, like parts are given like reference numerals, and the drawings are not drawn to scale.
Detailed Description
The following will describe embodiments of the present application in detail with reference to the drawings and examples, thereby solving the technical problems by applying technical means to the present application, and realizing the corresponding technical effects can be fully understood and implemented accordingly. The embodiment of the application and the characteristics in the embodiment can be mutually combined on the premise of no conflict, and the formed technical scheme is within the protection scope of the application. In the drawings, the size of layers and regions, as well as the relative sizes, may be exaggerated for clarity. Like numbers refer to like elements throughout.
It will be understood that, although the terms "first," "second," "third," etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present application.
It will be understood that spatially relative terms, such as "above," "located above," "below," "located below," and the like, may be used herein for convenience of description to describe one element or feature as illustrated in the figures as connected with another element or feature. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use and operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or features described as "below" other elements would then be oriented "on" the other elements or features. Thus, the exemplary terms "below" and "under" may include both an upper and a lower orientation. The device may be otherwise oriented (rotated 90 degrees or other orientations) and the spatially relative descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
Embodiments of the present application are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the present application. In this way, variations from the illustrated shape due to, for example, manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments of the present application should not be limited to the particular shapes of the regions illustrated herein, but include deviations in shapes that result, for example, from manufacturing.
In the following description, for the purpose of providing a thorough understanding of the present application, detailed structures and steps are presented in order to illustrate the technical solution presented by the present application. Preferred embodiments of the present application are described in detail below, however, the present application may have other embodiments in addition to these detailed descriptions.
In a stretchable display substrate, a flexible substrate with a small elastic modulus (small hardness) may be used in order to ensure that the island region is not damaged during the process, while also ensuring that the stretching or bending can be achieved. However, due to the existence of the driving element and the light emitting device (OLED, micro LED, etc.), the island region has a complex film structure, the hardness of the film layer is far greater than that of the bridge region (the connecting line region between adjacent island regions), the structure can cause the change of the soft and hard interfaces from the island region to the bridge region to be obvious, the mutation of the elastic modulus is caused, and the wiring damage is still caused when the display substrate is deformed in a stretching way, so that the display substrate is invalid.
The embodiment of the application provides a display substrate which is a stretchable display substrate. Referring to fig. 1 and 2, the display substrate includes a first flexible substrate 11, a second flexible substrate 13, a display structure 15, a bonding pad 16 and a connecting line 17.
A plurality of second flexible substrates 13 disposed above the first flexible substrate 11 at intervals; wherein each of the second flexible substrates 13 includes an island region 131 and a pad region 132 disposed around the island region 131, at least a portion of the second flexible substrate 13 of the pad region 132 gradually decreases in thickness in a direction away from the island region 131.
The display structure 15 is at least partially located over the island 131.
The pads 16 are at least partially over the pad areas 132.
The connection line 17 is located above the first flexible substrate 11 and is disposed between two adjacent second flexible substrates 13, wherein the connection line 17 is electrically connected to the pads 16 on the two adjacent second flexible substrates 13, for electrically connecting the display structures 15 on the two adjacent second flexible substrates 13.
In some embodiments, the thickness of the entire second flexible substrate 13 of the pad region 132 gradually decreases in a direction away from the island region 131 (the second flexible substrate 13 gradually decreases from the maximum thickness to 0).
In some embodiments, the thickness of at least a portion of the second flexible substrate 13 of the pad region 132 gradually decreases from a maximum thickness value to 0 in a direction away from the island region 131. That is, at the pad region 132, the total thickness of the flexible substrates of the display substrate gradually transitions from the total thickness of the first flexible substrate 11 and the second flexible substrate 13 to the thickness of the first flexible substrate 11 (i.e., transitions from the thickness of two layers of substrates to the thickness of one layer of substrate).
The total thickness of the flexible substrate at the island region 131 is the total thickness of the first flexible substrate 11 and the second flexible substrate 13, the total thickness of the flexible substrate at the bridge region (the region where the connecting line 17 is located) is the thickness of the first flexible substrate 11, and the total thickness of the flexible substrate at the bonding pad region 132 is gradually transited, so that the ratio (depth-to-width ratio) of the substrate thickness change to the width of the routing (the connecting line 17) is reduced, the purpose of the routing fine patterning process can be achieved, and the process difficulty is reduced.
In some embodiments, the first flexible substrate 11 has a thickness of 3 to 20 μm.
In some embodiments, the thickness of the second flexible substrate 13 is 3-20 μm.
The first flexible substrate 11 and the second flexible substrate 13 are the basis for realizing stretchability of the display substrate described above.
In some embodiments, the materials of the first flexible substrate 11 and the second flexible substrate 13 may be the same.
In some embodiments, the materials of the first flexible substrate 11 and the second flexible substrate 13 may each include Polyimide (PI).
As shown in fig. 3, in some embodiments, the display substrate further includes: a first buffer layer 12 disposed between the first flexible substrate 11 and the second flexible substrate 13.
Further, as shown in fig. 4, the first buffer layer 12 may also extend below the connection line 17. That is, the film structure at the position of the connecting line 17 (bridge region) is: a combination of a first flexible substrate 11, a first buffer layer 12 and a connection line 17.
The first buffer layer 12 may also serve as an electrostatic blocking layer, an impurity ion blocking layer, and a heat insulating layer.
In some embodiments, the material of the first buffer layer 12 includes SiNx and/or SiOx.
As shown in fig. 5, in some embodiments, the display substrate further includes: a second buffer layer 14 located between the display structure 15 and the second flexible substrate 13.
Further, the second buffer layer 14 extends below the pad 16, and at least a portion of the thickness of the second buffer layer 14 below the pad 16 gradually decreases in a direction away from the display structure 15.
That is, at the position of the pad region 132, not only the thickness of the second flexible substrate 13 but also the thickness of the inorganic layer such as the second buffer layer 14 may be gradually reduced, so as to further realize transition of the elastic modulus on the substrate and further reduce stress concentration during stretching.
In some embodiments, the material of the second buffer layer 14 includes SiNx and/or SiOx.
The second buffer layer 14 may also serve as an electrostatic blocking layer, an impurity ion blocking layer, and a heat insulating layer.
In some embodiments, the orthographic projection of the display structure 15 onto the first flexible substrate 11 overlaps with the orthographic projection of the bonding pad 16 onto the first flexible substrate 11.
That is, the bonding pad 16 is not completely covered by the display structure 15, the bonding pad 16 is a connection point structure protruding from the display structure 15, the connection line 17 can be directly contacted with the bonding pad 16 without punching, and the risk of stress concentration damage during stretching of the difference between soft and hard interfaces (abrupt elastic modulus) can be further improved by adding the second flexible substrate 13 with gradually-changed thickness below the bonding pad.
In some embodiments, the display structure 15 includes a driving structure layer (not shown) over the second flexible substrate 13, and a light emitting structure layer (not shown) disposed over the driving structure layer; the driving structure layer includes an active layer 1501, a gate insulating layer 1502, a gate layer 1503, an interlayer insulating layer 1505, and a source-drain metal layer 1506, which are sequentially stacked over the second flexible substrate 13.
In some embodiments, the active layer 1501 may be a semiconductor layer of low temperature polysilicon, monocrystalline silicon, or indium gallium zinc oxide, etc., and the active layer 1501 is disposed over the second flexible substrate 13.
In some embodiments, the gate insulating layer 1502 may be a SiOx layer, and the gate insulating layer 1502 is located over the active layer 1501, covering the active layer 1501.
In some embodiments, the gate layer 1503 is located over the gate insulating layer 1502 and at a position corresponding to the active layer 1501 (a position corresponding to a thin film transistor).
In some embodiments, an interlayer insulating layer 1505 is over the gate layer 1503, and the material may include SiOx and/or SiNx.
The source-drain metal layer 1506 contacts the active layer 1501 through contact holes penetrating the interlayer insulating layer 1505 and the gate insulating layer 1502. The source-drain metal layer 1506 is used to drain the source-drain of the thin film transistor.
The active layer 1501, the gate insulating layer 1502, the gate layer 1503, and the source-drain metal layer 1506 constitute a thin film transistor.
In some embodiments, the gate insulating layer 1502 and/or the interlayer insulating layer 1505 extend over the pad region 132; wherein the thickness of at least a portion of the gate insulating layer 1502 and/or the interlayer insulating layer 1505 above the pad region 132 gradually decreases in a direction away from the island region 131.
However, it should be noted that the inorganic layer (the gate insulating layer 1502 and/or the interlayer insulating layer 1505) extending above the pad region 132 does not completely cover the pad 16, so as to form a connection point structure of the protruding display structure 15, so that the connection line 17 may directly contact the pad 16 without punching, and the risk of stress concentration damage when the second flexible substrate 13 with gradually changed thickness below the connection line is stretched may be further improved.
In some embodiments, the driving structure layer further includes a capacitor unit (not shown), a gate trace 1504, and a source drain trace (not shown).
In some embodiments, an organic planarization layer 1507 is further disposed between the light emitting structure layer and the driving structure layer, for planarization of the light emitting structure layer and reduction of display defects.
In some embodiments, the light emitting structure layer includes a pixel defining layer 1509, and an anode layer 1508, a light emitting layer 1510, and a cathode layer 1511, which are sequentially stacked.
The pixel defining layer 1509 is used to form a pixel opening exposing the anode layer 1508.
The anode layer 1508 is in contact with the source-drain metal layer 1506 of the driving structure layer through an anode contact hole penetrating the organic planarization layer 1507 to achieve electrical connection.
The light emitting layer 1510 may be an organic light emitting layer 1510 including an electron injection layer, an electron transport layer, an organic light emitting material layer, a hole injection layer, and a hole transport layer.
In some embodiments, the display structure 15 further includes an encapsulation layer 1512, where the encapsulation layer 1512 covers the light emitting structure layer to block external moisture, oxygen, etc. from entering the light emitting structure layer to generate poor display. The encapsulation layer 1512 may be a silicon-containing inorganic material (SiOx, siNx, or SiON) and/or an organic material.
In some embodiments, the encapsulation layer 1512 includes a first inorganic film layer, an organic film layer on the first inorganic film layer, and a second inorganic film layer on the organic film layer. The organic film layer is formed by an ink-jet printing mode, and has good fluidity.
In some embodiments, the material of the pad 16 is the same as the material of the gate layer 1503 or the source drain metal layer 1506 in the display structure 15.
The choice of material for the pad 16 may be determined by the electrode to be extracted, for example, when the pad 16 extracts a gate of a thin film transistor (i.e., the pad 16 is electrically connected to a gate trace), the material of the pad 16 may be the same as that of the gate layer 1503. As shown in fig. 2 to 5; when the pad 16 leads out the source and drain electrodes of the thin film transistor (i.e., the pad 16 is electrically connected to the source and drain traces), the material of the pad 16 may be the same as that of the source and drain metal layer 1506, as shown in fig. 6.
When the material of the pad 16 is the same as that of the source drain metal layer 1506, the pad 16 extends to above the interlayer insulating layer 1505 of the display structure 15, and at this time, etching of each film layer at the position of the pad region 132 and each film layer at the position of the connecting line 17 (bridge region) can be performed synchronously with etching of the contact hole corresponding to the source drain metal layer 1506 of the display structure 15, and etching of the bending region (region where bending is performed after binding of the FPC) of the display substrate can also be performed.
In some embodiments, the material of the connection line 17 may be the same as the material of the source drain metal layer 1506.
In some embodiments, the material of the connection line 17 may be other metallic materials.
In some embodiments, the orthographic projection of the connection line 17 on the first flexible substrate 11 is in a curved shape, or even in a wavy shape, so that when the display substrate is stretched, the connection line 17 has a certain stress buffering effect, and the stretching performance is stronger, so that the stretching capability of the display substrate is further improved.
As shown in fig. 7, in some embodiments, the display substrate further includes a flexible back film 18 located under the first flexible substrate 11; wherein the modulus of elasticity of the flexible back film 18 is smaller than the moduli of elasticity of the first flexible substrate 11 and the second flexible substrate 13.
That is, the flexibility of the flexible back film 18 is superior to the first flexible substrate 11 and the second flexible substrate 13, and the stretchability of the display substrate described above can be further improved.
Further, the material of the flexible back film 18 may be Polydimethylsiloxane (PDMS) having a smaller elastic modulus (smaller hardness) than Polyimide (PI).
In the display substrate, the thickness of the substrate at the position of the island 131 (the display structure 15) is thick, the thickness of the substrate at the position of the connecting line 17 (the bridge region) is thin, and the thickness of at least part of the second flexible substrate 13 of the pad region 132 is gradually reduced along the direction away from the island 131, so that the elastic modulus from the position of the island 131 to the position of the connecting line 17 (the bridge region) is smoothly transited, the damage of the connecting line 17 (wiring) caused by stress concentration when the display substrate is stretched is avoided, the stretching capability of the display substrate is greatly improved, and the product yield and reliability of the stretchable display substrate can be improved.
The embodiment of the application also provides a preparation method of the display substrate, and the patterning comprises the treatments of photoresist coating, mask exposure, development, etching, photoresist stripping and the like. The "deposition" may be selected from any one or more of sputtering, evaporation and chemical vapor deposition, and the etching may be selected from any one or more of dry etching and wet etching.
Referring to fig. 8, a method for manufacturing a display substrate according to an embodiment of the application includes the following steps:
Step S110: a glass substrate 19 is provided.
Step S120: the first flexible substrate 11 is formed over the glass substrate 19.
The first flexible substrate 11 is formed over the glass substrate 19 by means of coating. The material of the first flexible substrate 11 may include Polyimide (PI).
Since the material of the first flexible substrate 11 is a flexible material, curling is easily caused during the process, and thus the flexible substrate 111 needs to be coated on the glass substrate 19 in order to facilitate the subsequent process.
In some embodiments, after step S120, further comprising: a first buffer layer 12 is formed over the first flexible substrate 11.
The first buffer layer 12 may also serve as an electrostatic blocking layer, an impurity ion blocking layer, and a heat insulating layer.
In some embodiments, the material of the first buffer layer 12 includes SiNx and/or SiOx.
Step S130: forming a plurality of second flexible substrates 13 disposed at intervals over the first flexible substrate 11; wherein each of the second flexible substrates 13 includes an island region 131 and a pad region 132 disposed around the island region 131, at least a portion of the second flexible substrate 13 of the pad region 132 gradually decreases in thickness in a direction away from the island region 131.
In some embodiments, the thickness of the entire second flexible substrate 13 of the pad region 132 gradually decreases in a direction away from the island region 131 (the maximum thickness of the second flexible substrate 13 gradually decreases to 0).
In some embodiments, the thickness of at least a portion of the second flexible substrate 13 of the pad region 132 gradually decreases from a maximum thickness value to 0 in a direction away from the island region 131. That is, at the pad region 132, the total thickness of the flexible substrates of the display substrate gradually transitions from the total thickness of the first flexible substrate 11 and the second flexible substrate 13 to the thickness of the first flexible substrate 11 (i.e., transitions from the thickness of two layers of substrates to the thickness of one layer of substrate).
The total thickness of the flexible substrate at the island region 131 is the total thickness of the first flexible substrate 11 and the second flexible substrate 13, the total thickness of the flexible substrate at the bridge region (the region where the connecting line 17 is located) is the thickness of the first flexible substrate 11, and the total thickness of the flexible substrate at the bonding pad region 132 is gradually transited, so that the ratio (depth-to-width ratio) of the substrate thickness change to the width of the routing (the connecting line 17) is reduced, the purpose of the routing fine patterning process can be achieved, and the process difficulty is reduced.
In some embodiments, the first flexible substrate 11 has a thickness of 3 to 20 μm.
In some embodiments, the thickness of the second flexible substrate 13 is 3-20 μm.
The first flexible substrate 11 and the second flexible substrate 13 are the basis for realizing stretchability of the display substrate described above.
In some embodiments, the materials of the first flexible substrate 11 and the second flexible substrate 13 may be the same.
In some embodiments, the materials of the first flexible substrate 11 and the second flexible substrate 13 may each include Polyimide (PI).
The thickness difference of the second flexible substrate 13 of the pad region 132 may be formed by an etching process or the like, and the second buffer layer 14 may be further formed over the second flexible substrate 13 before the second flexible substrate 13 is etched, as shown in fig. 9.
In some embodiments, the material of the second buffer layer 14 includes SiNx and/or SiOx.
The second buffer layer 14 may also serve as an electrostatic blocking layer, an impurity ion blocking layer, and a heat insulating layer.
During the etching of the second flexible substrate 13, the second buffer layer 14 may be etched at the same time.
The second buffer layer 14 after etching may extend below the pad 16, and at least a portion of the second buffer layer 14 below the pad 16 may gradually decrease in thickness in a direction away from the display structure 15.
That is, at the position of the pad region 132, not only the thickness of the second flexible substrate 13 but also the thickness of the inorganic layer such as the second buffer layer 14 may be gradually reduced, so as to further realize transition of the elastic modulus on the substrate and further reduce stress concentration during stretching.
In some embodiments, during the etching of the second flexible substrates 13, the first buffer layer 12 between two adjacent second flexible substrates 13 may be etched, or the first buffer layer 12 may not be etched.
Step S140: forming a display structure 15 at least partially over the island region 131, forming a pad 16 at least partially over the pad region 132, forming a connection line 17 over the first flexible substrate 11 and between two adjacent second flexible substrates 13; wherein the connection lines 17 are electrically connected to the pads 16 on the two adjacent second flexible substrates 13 for electrically connecting the display structures 15 on the two adjacent second flexible substrates 13.
In some embodiments, the pads 16 and the connection lines 17 may be formed simultaneously during the formation of the display structure 15, as shown in fig. 10 and 11.
In some embodiments, the orthographic projection of the display structure 15 onto the first flexible substrate 11 overlaps with the orthographic projection of the bonding pad 16 onto the first flexible substrate 11.
That is, the bonding pad 16 is not completely covered by the display structure 15, the bonding pad 16 is a connection point structure protruding from the display structure 15, the connection line 17 can be directly contacted with the bonding pad 16 without punching, and the risk of stress concentration damage during stretching of the difference between soft and hard interfaces (abrupt elastic modulus) can be further improved by adding the second flexible substrate 13 with gradually-changed thickness below the bonding pad.
In some embodiments, forming the display structure 15 over the island 131 includes the steps of: a driving structure layer is formed over the second flexible substrate 13, and a light emitting structure layer is formed over the driving structure layer.
Wherein a driving structure layer is formed over the second flexible substrate 13, comprising the steps of:
(a) Forming an active layer 1501 (including deposition and patterning) over the second flexible substrate 13;
(b) Forming a gate insulating layer 1502 over the active layer 1501;
(c) Forming a gate layer 1503 (including deposition and patterning) over the gate insulating layer 1502;
(d) Forming (depositing) an interlayer insulating layer 1505 over the gate layer 1503;
(e) Forming a contact hole penetrating the interlayer insulating layer 1505 and the gate insulating layer 1502 (patterning process);
(f) The source drain metal layer 1506 is formed (including deposition and patterning) that fills the contact holes.
The active layer 1501, the gate insulating layer 1502, the gate layer 1503, and the source-drain metal layer 1506 constitute a thin film transistor.
In some embodiments, the gate insulating layer 1502 and/or the interlayer insulating layer 1505 extend over the pad region 132; wherein the thickness of at least a portion of the gate insulating layer 1502 and/or the interlayer insulating layer 1505 above the pad region 132 gradually decreases in a direction away from the island region 131.
However, it should be noted that the inorganic layer (the gate insulating layer 1502 and/or the interlayer insulating layer 1505) extending above the pad region 132 does not completely cover the pad 16, so as to form a connection point structure of the protruding display structure 15, so that the connection line 17 can directly contact the pad 16 without punching, and the risk of stress concentration damage during stretching of the soft-hard interface difference (abrupt elastic modulus change) can be further improved by adding the second flexible substrate 13 having a gradually-changed thickness below the connection line 17.
In some embodiments, the driving structure layer further includes a capacitor unit (not shown), a gate trace 1504, and a source drain trace (not shown).
In some embodiments, the etching of the second flexible substrate 13, the first buffer layer 12, and the second buffer layer 14 in step S130 may be completed simultaneously with the formation of the source-drain electrode contact hole.
Further, the etching of the display substrate bending region (region where bending is performed after binding of the FPC) may be performed simultaneously with the formation of the source-drain electrode contact hole.
In some embodiments, the material of the pad 16 is the same as the material of the gate layer 1503 or the source drain metal layer 1506 in the display structure 15. That is, the formation of the pad 16 may be formed during the formation of the gate layer 1503 or the source drain metal layer 1506.
The choice of the material of the pad 16 may be determined according to the electrode to be extracted, for example, when the pad 16 extracts the gate of the thin film transistor (i.e., the pad 16 is electrically connected to the gate trace), the material of the pad 16 may be the same as the material of the gate layer 1503; when the pad 16 leads out the source and drain electrodes of the thin film transistor (i.e., the pad 16 is electrically connected to the source and drain wirings), the material of the pad 16 may be the same as that of the source and drain metal layer 1506.
When the material of the pad 16 is the same as that of the source drain metal layer 1506, the pad 16 extends to above the interlayer insulating layer 1505 of the display structure 15, and at this time, etching of each film layer at the position of the pad region 132 and each film layer at the position of the connecting line 17 (bridge region) can be performed synchronously with etching of the contact hole corresponding to the source drain metal layer 1506 of the display structure 15, and etching of the bending region (region where bending is performed after binding of the FPC) of the display substrate can also be performed.
In some embodiments, the material of the connection line 17 may be the same as the material of the source drain metal layer 1506. That is, the formation of the connection line 17 may be formed during the formation of the source-drain metal layer 1506.
In some embodiments, the material of the connection line 17 may be other metallic materials.
In some embodiments, the orthographic projection of the connection line 17 on the first flexible substrate 11 is in a curved shape, or even in a wavy shape, so that when the display substrate is stretched, the connection line 17 has a certain stress buffering effect, and the stretching performance is stronger, so that the stretching capability of the display substrate is further improved.
Forming a light emitting structure layer over a driving structure layer, comprising the steps of:
(a) Forming (depositing) an organic planarization layer 1507 over the driving structure layer;
(b) Forming an anode contact hole (patterning) penetrating the organic planarization layer 1507;
(c) Forming an anode layer 1508 (including deposition and patterning) filled in the anode contact hole;
(d) Forming the pixel definition layer 1509 around the anode layer 1508 includes deposition and patterning);
(e) Forming (depositing) a light-emitting layer 1510 over the anode layer 1508;
(f) A cathode layer 1511 is formed (deposited) over the light-emitting layer 1510.
After forming the light emitting structure layer over the driving structure layer, further comprising: an encapsulation layer 1512 is formed over the light emitting structure layer.
The encapsulation layer 1512 covers the light emitting structure layer to prevent external moisture, oxygen, etc. from entering the light emitting structure layer to generate poor display. The first encapsulation layer 151214 may be a silicon-containing inorganic material (SiOx, siNx, or SiON) and/or an organic material.
In some embodiments, the first encapsulation layer 1512 includes a first inorganic film layer, an organic film layer on the first inorganic film layer, and a second inorganic film layer on the organic film layer. The organic film layer is formed by an ink-jet printing mode, and has good fluidity.
Step S150: the glass substrate 19 is removed.
Since the glass substrate 19 is rigid and plays a supporting role during the manufacturing process, the glass substrate 19 needs to be removed after the above process is completed so as not to affect the tensile properties of the display substrate.
In some embodiments, after step S150, the following steps are further included:
Step S160: forming a flexible back film 18 under the first flexible substrate 11; wherein the modulus of elasticity of the flexible back film 18 is smaller than the moduli of elasticity of the first flexible substrate 11 and the second flexible substrate 13.
That is, the flexibility of the flexible back film 18 is superior to the first flexible substrate 11 and the second flexible substrate 13, and the stretchability of the display substrate described above can be further improved.
Further, the material of the flexible back film 18 may be Polydimethylsiloxane (PDMS) having a smaller elastic modulus than Polyimide (PI).
In the preparation method of the display substrate, the thickness of the base at the position of the island 131 (the display structure 15) is thick, the thickness of the base at the position of the connecting line 17 (the bridge region) is thin, and the thickness of at least part of the second flexible base 13 of the pad region 132 is gradually reduced along the direction away from the island 131, so that the elastic modulus from the island 131 to the connecting line 17 (the bridge region) is smoothly transited, the damage of the connecting line 17 (wiring) caused by stress concentration when the display substrate is stretched is avoided, the stretching capability of the display substrate is greatly improved, and the product yield and reliability of the stretchable display substrate can be improved.
The embodiment of the application also provides a display device, which comprises the display substrate of any embodiment or the display substrate prepared by the preparation method of any embodiment.
In some embodiments, the display device is a display panel, and the display panel includes the display substrate and the glass cover plate.
In some embodiments, the display device may include a display panel and a housing, the display panel being connected to the housing, e.g., the display panel is embedded within the housing. The display device can be any device with display function, such as a mobile phone, a tablet computer, a television, a notebook computer, a digital photo frame, a navigator and the like.
The above is only a preferred embodiment of the present application, and is not intended to limit the present application, but various modifications and variations can be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the present application. Although the embodiments of the present application are disclosed above, the present application is not limited to the embodiments which are used for the convenience of understanding the present application. Any person skilled in the art can make any modification and variation in form and detail without departing from the spirit and scope of the present disclosure, but the scope of the present disclosure is still subject to the scope of the present disclosure as defined by the appended claims.
Claims (9)
1. A display substrate, comprising:
A first flexible substrate;
A plurality of second flexible substrates disposed above the first flexible substrate at intervals; each second flexible substrate comprises an island region and a bonding pad region arranged around the island region, and the thickness of at least part of the second flexible substrates positioned in the bonding pad region is gradually reduced along the direction away from the island region;
a display structure at least partially over the island;
a pad at least partially over the pad region, an orthographic projection of the display structure on the first flexible substrate overlapping an orthographic projection of the pad on the first flexible substrate;
The connecting lines are positioned above the first flexible substrates and are arranged between two adjacent second flexible substrates; the connecting wires are electrically connected with the bonding pads on the two adjacent second flexible substrates and are used for realizing the electrical connection of the display structures on the two adjacent second flexible substrates.
2. The display substrate of claim 1, further comprising:
And the first buffer layer is arranged between the first flexible substrate and the second flexible substrate.
3. The display substrate of claim 2, wherein the first buffer layer extends below the connection lines.
4. The display substrate of claim 1, further comprising:
a second buffer layer located between the display structure and the second flexible substrate;
The second buffer layer extends to the lower portion of the bonding pad, and at least part of the thickness of the second buffer layer below the bonding pad gradually decreases along the direction away from the display structure.
5. The display substrate of claim 1, wherein the display structure comprises a driving structure layer over the second flexible substrate, and a light emitting structure layer disposed over the driving structure layer;
the driving structure layer comprises an active layer, a gate insulating layer, a gate layer, an interlayer insulating layer and a source drain metal layer which are sequentially stacked above the second flexible substrate.
6. The display substrate according to claim 5, wherein a material of the pad is the same as a material of the gate layer or the source drain metal layer.
7. The display substrate according to claim 5, wherein the gate insulating layer and/or the interlayer insulating layer extends over the pad region;
wherein a thickness of at least a portion of the gate insulating layer and/or the interlayer insulating layer located above the pad region gradually decreases in a direction away from the island region.
8. The display substrate of claim 1, further comprising:
A flexible backing film positioned below the first flexible substrate;
wherein the modulus of elasticity of the flexible backing film is less than the modulus of elasticity of the first flexible substrate and the second flexible substrate.
9. A display device comprising the display substrate according to any one of claims 1 to 8.
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