CN111524832A - Residual gas removal apparatus and method - Google Patents
Residual gas removal apparatus and method Download PDFInfo
- Publication number
- CN111524832A CN111524832A CN202010342136.6A CN202010342136A CN111524832A CN 111524832 A CN111524832 A CN 111524832A CN 202010342136 A CN202010342136 A CN 202010342136A CN 111524832 A CN111524832 A CN 111524832A
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- Prior art keywords
- gas
- chambers
- wafer
- chamber
- residual gas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
Abstract
The application discloses residual gas removal equipment and method, including: the shell is a cube, and an opening surface is formed in six surfaces; the at least two chambers are arranged in the shell and used for placing wafers, gas inlets and gas outlets are arranged in the at least two chambers, when the equipment works, gas is introduced from the gas inlets, and the gas is discharged from the gas outlets so as to remove residual gas on the wafers placed in the chambers; and the door panel is arranged on the opening surface. This application is through setting up air inlet and gas vent in the cavity of residual gas removal equipment, when equipment during operation, let in gas from the air inlet, gas is discharged from the gas outlet in order to get rid of the residual gas on placing the wafer in the cavity, because the efficiency of getting rid of residual gas through gas is higher than the removal of stewing, consequently can reduce the time of getting rid of residual gas, the manufacturing efficiency of device has been improved, the effect of getting rid of the residual gas to the wafer has also been improved simultaneously, the particle defect of wafer has been reduced to a certain extent.
Description
Technical Field
The application relates to the technical field of semiconductor manufacturing, in particular to residual gas removing equipment and a residual gas removing method in a semiconductor manufacturing process.
Background
In a semiconductor manufacturing process, particularly, in a metal interconnection process of FAB7(fabrication7, a semiconductor manufacturing process with a process of 90 nm to 65 nm generally), an ALO (all-in-one) process is generally adopted, and during the process, a wafer integrated with a semiconductor device generally causes chemical pollution due to residual reaction gas, thereby causing particle defects (recesses) of the wafer.
In view of this, in the related art, after the corresponding steps in the metal interconnection process are performed on the wafer, the wafer is usually left for a predetermined time (usually 20 minutes) to remove the residual gas on the wafer (this method is also called "purge storage"), and then the next step is performed.
However, the longer time for placing the wafer may reduce the manufacturing efficiency of the semiconductor device product; meanwhile, the method for removing the residual gas by placing the wafer in the vacuum chamber has poor removal effect, so that the manufacturing yield of the product is reduced to a certain extent.
Disclosure of Invention
The application provides residual gas removing equipment and method, which can solve the problems that a residual gas removing method of a wafer provided in the related art is long in time consumption and poor in removing effect.
In one aspect, an embodiment of the present application provides a residual gas removing apparatus, which is applied to a metal interconnection process of a semiconductor manufacturing process, and includes:
the shell is a cube, and six faces of the shell are provided with opening faces;
the at least two chambers are arranged in the shell and used for placing wafers, gas inlets and gas outlets are arranged in the at least two chambers, when the equipment works, gas is introduced from the gas inlets, and the gas is discharged from the gas outlets so as to remove residual gas on the wafers placed in the chambers;
a door panel disposed on the open face.
Optionally, for any of the at least two chambers, it comprises at least one inlet and at least one outlet.
Optionally, for any of the at least two chambers, it comprises a plurality of gas inlets.
Optionally, each of the at least two chambers is isolated from each other.
Optionally, when the apparatus is in operation, the gas passing into the chamber from the gas inlet comprises nitrogen.
Optionally, when the device is in operation, the temperature of the gas introduced into the chamber from the gas inlet is 25 to 80 ℃.
In another aspect, an embodiment of the present application provides a residual gas removal method, which is applied to a metal interconnection process of a semiconductor manufacturing process, and the method includes:
opening a door panel of the residual gas removal apparatus;
placing a wafer in a chamber of the apparatus;
closing the door plate, introducing gas from a gas inlet in the cavity, and exhausting the gas from a gas outlet of the cavity to remove residual gas on the wafer;
and opening the door plate and taking out the wafer.
Optionally, the apparatus comprises at least two chambers;
the placing the wafer in a chamber of the apparatus comprises:
placing each of at least two wafers in each of the at least two chambers.
Optionally, the gas passed into the chamber from the gas inlet comprises nitrogen.
Optionally, the temperature of the gas introduced into the chamber from the gas inlet is 25 to 80 ℃.
Optionally, the time for introducing gas from the gas inlet in the chamber is less than 20 minutes.
Optionally, for any of the at least two chambers, it comprises at least one inlet and at least one outlet.
Optionally, for any of the at least two chambers, it comprises a plurality of gas inlets.
Optionally, each of the at least two chambers is isolated from each other.
The technical scheme at least comprises the following advantages:
through set up air inlet and gas vent in residual gas removes the cavity of equipment, when equipment during operation, let in gas from the air inlet, gas is discharged in order to get rid of the residual gas on the wafer of placing in the cavity from the gas outlet, because the efficiency of getting rid of residual gas through gas is higher than the removal of stewing, consequently can reduce the time of getting rid of residual gas, has improved the manufacturing efficiency of device, has also improved the effect of getting rid of the residual gas to the wafer simultaneously, has reduced the granule defect of wafer to a certain extent.
Drawings
In order to more clearly illustrate the detailed description of the present application or the technical solutions in the prior art, the drawings needed to be used in the detailed description of the present application or the prior art description will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic view of a residual gas removal apparatus provided in an exemplary embodiment of the present application;
fig. 2 is a flow chart of a residual gas removal method provided in an exemplary embodiment of the present application.
Detailed Description
The technical solutions in the present application will be described clearly and completely with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; the connection can be mechanical connection or electrical connection; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
In addition, the technical features mentioned in the different embodiments of the present application described below may be combined with each other as long as they do not conflict with each other.
Referring to fig. 1, there is shown a schematic view of a residual gas removal apparatus provided by an exemplary embodiment of the present application. As shown in fig. 1, the residual gas removing apparatus 100 may be applied to a metal interconnection process of a semiconductor manufacturing process, the residual gas removing apparatus 100 including:
the case 110 is a cube having an open face 111 in six faces. For example, the housing 110 may comprise a metal material or a plastic material, and the housing 110 may be modified from the wafer rack provided in the related art for clean placement.
At least two chambers 112, provided in the housing 110, for placing wafers 200, are provided with an inlet 101 and an outlet (not shown in fig. 1). When the residual gas removing apparatus 100 is operated, gas is introduced from the gas inlet 101, and the gas is discharged from the gas outlet to remove residual gas on the wafer 200 placed in the chamber 112.
Optionally, in the present embodiment, each chamber 112 includes at least one inlet port 101 and at least one outlet port (fig. 1 illustrates that each chamber 112 is provided with three inlet ports 101); optionally, each chamber 112 includes a plurality of gas inlets 112.
Alternatively, as shown in FIG. 1, each of the chambers 112 is isolated from the other chambers. By isolating the chambers 112 from each other, that is, the storage spaces of the wafers 200 in each chamber 112 are independent from each other, the efficiency of removing the residual gas from the wafers 200 by introducing the gas can be improved.
Optionally, in the embodiment of the present application, the gas introduced into the chamber 112 from the gas inlet 101 includes nitrogen; optionally, the temperature of the gas introduced into the chamber 112 from the gas inlet 101 is 25 to 80 degrees celsius. The introduced gas comprises nitrogen with stable chemical properties, so that the oxidation of oxygen in the air on the wafer 200 can be avoided; the temperature of the introduced gas is 25-80 ℃, so that the gas flow can be accelerated, and the residual gas removal efficiency is improved.
And a door panel 120 provided on the opening surface 111 of the case 110.
To sum up, in the embodiment of the application, through set up air inlet and gas vent in the cavity of residual gas removal equipment, when equipment during operation, let in gas from the air inlet, gaseous follow the gas outlet and discharge in order to get rid of the residual gas on the wafer of placing in the cavity, because the efficiency of getting rid of the residual gas through gas is higher than the removal of stewing, consequently can reduce the time of getting rid of the residual gas, has improved the manufacturing efficiency of device, has also improved the effect of getting rid of to the residual gas of wafer simultaneously, has reduced the granule defect of wafer to a certain extent.
Referring to fig. 2, a flow chart of a residual gas removal method provided by an exemplary embodiment of the present application is shown. The method can be applied to a metal interconnection process of a semiconductor manufacturing process, and can be implemented by the residual gas removal apparatus 100 in the above embodiment, as shown in fig. 2, and the method includes:
Illustratively, in this step, as shown in fig. 1, the door panel 120 of the residual gas removal apparatus 100 may be opened.
At step 202, the wafer is placed in a chamber of a residual gas removal apparatus.
Illustratively, in this step, as shown in fig. 1, the wafers 200 may be placed in the chambers 112 of the residual gas removal apparatus 100, one wafer 200 being placed in each chamber 112.
And step 203, closing the door plate, introducing gas from an air inlet in the chamber, and exhausting the gas from an air outlet of the chamber to remove residual gas on the wafer.
Illustratively, in this step, as shown in fig. 1, gas is introduced from the gas inlet 101 in the chamber 112, and the gas is exhausted from the gas outlet of the chamber 112 to remove residual gas on the wafer 200.
Optionally, in the embodiment of the present application, the gas introduced into the chamber 112 from the gas inlet 101 includes nitrogen; optionally, the temperature of the gas introduced into the chamber 112 from the gas inlet 101 is 25 to 80 degrees celsius; optionally, the time for gas to pass from the gas inlet 101 in the chamber 112 is less than 20 minutes.
Optionally, in the present embodiment, each chamber 112 includes at least one inlet port 101 and at least one outlet port; optionally, each chamber 112 is isolated from the other.
Illustratively, as shown in fig. 1, the door 120 may be opened and the wafer 200 may be removed for the next process.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of this invention are intended to be covered by the scope of the invention as expressed herein.
Claims (14)
1. A residual gas removing apparatus, which is used in a metal interconnection process of a semiconductor manufacturing process, comprising:
the shell is a cube, and six faces of the shell are provided with opening faces;
the at least two chambers are arranged in the shell and used for placing wafers, gas inlets and gas outlets are arranged in the at least two chambers, when the equipment works, gas is introduced from the gas inlets, and the gas is discharged from the gas outlets so as to remove residual gas on the wafers placed in the chambers;
a door panel disposed on the open face.
2. The apparatus of claim 1, comprising at least one inlet port and at least one outlet port for any of the at least two chambers.
3. The apparatus of claim 2, comprising a plurality of gas inlets for any of the at least two chambers.
4. The apparatus of claim 3, wherein each of the at least two chambers are isolated from each other.
5. Apparatus according to any one of claims 1 to 4, wherein the gas passing into the chamber from the gas inlet comprises nitrogen when the apparatus is in operation.
6. The apparatus of claim 5, wherein the temperature of the gas passing from the gas inlet into the chamber is between 25 degrees Celsius and 80 degrees Celsius when the apparatus is in operation.
7. A residual gas removing method is applied to a metal interconnection process of a semiconductor manufacturing process, and comprises the following steps:
opening a door panel of the residual gas removal apparatus;
placing a wafer in a chamber of the apparatus;
closing the door plate, introducing gas from a gas inlet in the cavity, and exhausting the gas from a gas outlet of the cavity to remove residual gas on the wafer;
and opening the door plate and taking out the wafer.
8. The method of claim 7, wherein the apparatus comprises at least two chambers;
the placing the wafer in a chamber of the apparatus comprises:
placing each of at least two wafers in each of the at least two chambers.
9. The method of claim 8, wherein the gas passed into the chamber from the gas inlet comprises nitrogen.
10. The method of claim 9, wherein the temperature of the gas passing into the chamber from the gas inlet is between 25 degrees celsius and 80 degrees celsius.
11. The method of claim 10, wherein the gas is introduced from a gas inlet in the chamber for less than 20 minutes.
12. The method of any one of claims 7 to 11, comprising at least one inlet port and at least one outlet port for any one of the at least two chambers.
13. The method of claim 12, comprising a plurality of gas inlets for any of the at least two chambers.
14. The method of claim 13, wherein each of the at least two chambers are isolated from each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010342136.6A CN111524832A (en) | 2020-04-27 | 2020-04-27 | Residual gas removal apparatus and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010342136.6A CN111524832A (en) | 2020-04-27 | 2020-04-27 | Residual gas removal apparatus and method |
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| Publication Number | Publication Date |
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| CN111524832A true CN111524832A (en) | 2020-08-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202010342136.6A Pending CN111524832A (en) | 2020-04-27 | 2020-04-27 | Residual gas removal apparatus and method |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100989887B1 (en) * | 2010-05-24 | 2010-10-26 | 지이에스(주) | Apparatus for residual gas of wafer |
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- 2020-04-27 CN CN202010342136.6A patent/CN111524832A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100989887B1 (en) * | 2010-05-24 | 2010-10-26 | 지이에스(주) | Apparatus for residual gas of wafer |
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Application publication date: 20200811 |
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| RJ01 | Rejection of invention patent application after publication |