CN111524779B - Prevent board device and ion source cavity, ion implantation machine - Google Patents
Prevent board device and ion source cavity, ion implantation machine Download PDFInfo
- Publication number
- CN111524779B CN111524779B CN202010351489.2A CN202010351489A CN111524779B CN 111524779 B CN111524779 B CN 111524779B CN 202010351489 A CN202010351489 A CN 202010351489A CN 111524779 B CN111524779 B CN 111524779B
- Authority
- CN
- China
- Prior art keywords
- ion source
- source chamber
- side wall
- attachment plate
- plate body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
The utility model provides a plate-attachment prevention device, which is arranged at the bottom inside an ion source chamber of an ion implanter and comprises a plate-attachment prevention body, wherein the plate-attachment prevention body is provided with an opening facing the top of the ion source chamber, and a diffusion-prevention structure is arranged at the opening; the diffusion preventing structure is used for enabling particles generated in the ion source chamber to fall into the plate attachment preventing body, and enabling the particles not to diffuse out of the plate attachment preventing body easily. The present disclosure also provides an ion source chamber and an ion implanter.
Description
Technical Field
The embodiment of the disclosure relates to the field of semiconductor process equipment, in particular to a plate attachment prevention device, an ion source chamber and an ion implanter.
Background
In the existing OLED Ion implanter, the required implanted ions B + or P + are obtained by ionizing BF3 or PH3, and in the process, a large amount of impurity ions such as F + and unextracted B +/P + ions exist, and the ions are gathered in an Ion Source chamber to generate particles (particles), and the particles are deposited at the bottom of the Ion Source chamber due to the action of gravity.
On the one hand, the deposited particles are susceptible to diffusion during ion implantation. As shown in fig. 1, the diffused particles are liable to fall on the electrode plate along with the ion Beam (Beam), and contaminate the electrode plate, thereby causing deterioration of the discharge of the electrode plate, affecting the service life of the electrode plate and uniformity and stability of Beam. Meanwhile, as shown in fig. 1, diffused particles also easily enter an analysis magnetic field (Beam Line) chamber with Beam and deposit in the Beam Line, contaminate parts of the carbon plate in the Beam Line, resulting in a decrease in the service life of the carbon plate and a great difficulty in cleaning the particles deposited in the Beam Line. In addition, as shown in fig. 1, diffused particles are also easy to enter the Process Chamber (PC) along with Beam, contaminate the surface of the substrate to be ion-implanted, and may cause AOI (shot image) pop in severe cases, and particles attached to the surface of the substrate may block Beam, affecting the stability and uniformity of ion implantation in the blocked area, thereby causing some poor spots of the substrate.
On the other hand, the existing ion source chamber usually needs to be opened to clean the particles deposited on the bottom, the flow is complex, and the utilization rate of the equipment is affected.
Disclosure of Invention
The embodiments of the present disclosure are directed to at least one of the technical problems in the prior art, and provide a plate-attachment prevention device, an ion source chamber, and an ion implanter.
In a first aspect, an embodiment of the present disclosure provides a plate attachment prevention device, which is disposed at the bottom inside an ion source chamber of an ion implanter, and includes a plate attachment prevention body having an opening facing the top of the ion source chamber, where the opening is provided with a diffusion prevention structure;
the diffusion-preventing structure is used for enabling particles generated in the ion source chamber to fall into the attachment-preventing plate body and enabling the particles not to be easily diffused out of the attachment-preventing plate body.
In some embodiments, the diffusion preventing structure comprises a plurality of spaced barrier ribs, and the surface of the barrier ribs facing the top of the ion source chamber is curved.
In some embodiments, the landing prevention plate body has a first side wall and a second side wall which are arranged oppositely, and a plurality of barrier strips are arranged on the first side wall and the second side wall at intervals respectively;
for each barrier strip on the first side wall, one end of the barrier strip is arranged on the first side wall, and the barrier strip is obliquely arranged along the direction vertical to the bottom of the defending plate body;
and aiming at each barrier strip on the second side wall, one end of the barrier strip is arranged on the second side wall, and the barrier strip is obliquely arranged along the direction vertical to the bottom of the defending plate body.
In some embodiments, the attachment prevention plate body has a first side wall and a second side wall which are oppositely arranged, one end of the blocking strip is detachably arranged on the first side wall, and the other end of the blocking strip is detachably arranged on the second side wall.
In some embodiments, the diffusion preventing structure comprises a baffle plate having a plurality of uniformly distributed vias thereon.
In some embodiments, the landing plate body has a plurality of side walls, and at least one side wall of the landing plate body has a cleaning valve hole for cleaning particles in the landing plate body.
In some embodiments, the cross-sectional shape of the fence body is U-shaped.
In some embodiments, the cross-sectional shape of the fence body is an inverted trapezoid.
In some embodiments, the cross-sectional shape of the landing plate body is funnel-shaped, and the bottom of the landing plate body is provided with a cleaning valve hole, and the cleaning valve hole is used for cleaning particles in the landing plate body.
In a second aspect, an embodiment of the present disclosure provides an ion source chamber, where the ion source chamber includes a chamber body and a plate attachment prevention device located at a bottom inside the chamber body, where the plate attachment prevention device employs the plate attachment prevention device provided in any one of the embodiments.
In some embodiments, the cross-sectional shape of the bottom of the chamber body interior is the same as the cross-sectional shape of the fence body.
In a third aspect, embodiments of the present disclosure provide an ion implanter including an ion source chamber as provided in any of the above embodiments.
Drawings
FIG. 1 is a schematic view of the diffusion of particles generated in an ion implanter;
fig. 2 is a schematic structural view of a landing prevention device according to an embodiment of the present disclosure;
fig. 3 is a schematic structural view of another attachment prevention device provided in the embodiment of the present disclosure;
fig. 4 is a schematic structural view of another attachment preventing device provided in the embodiment of the present disclosure;
fig. 5 is a schematic structural diagram of an ion source chamber according to an embodiment of the present disclosure.
Detailed Description
In order to make those skilled in the art better understand the technical solutions of the embodiments of the present disclosure, the following will clearly and completely describe the technical solutions of the anti-attachment plate device, the ion source chamber and the ion implanter provided by the embodiments of the present disclosure with reference to the drawings of the embodiments of the present disclosure.
Example embodiments will be described more fully hereinafter with reference to the accompanying drawings, but which may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It will be understood that, although the terms first, second, etc. may be used herein to describe various elements/structures, these elements/structures should not be limited by these terms. These terms are only used to distinguish one element/structure from another element/structure.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present disclosure, and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
Fig. 2 is a schematic structural diagram of a landing prevention device according to an embodiment of the present disclosure, as shown in fig. 2, the landing prevention device is disposed at a bottom inside an ion source chamber of an ion implanter, and the landing prevention device includes: the ion source chamber comprises a landing prevention plate body 10, wherein the landing prevention plate body 10 is provided with an opening 30 facing the top of the ion source chamber, a diffusion prevention structure is arranged at the opening 30, and the diffusion prevention structure is used for enabling particles generated in the ion source chamber to fall into the landing prevention plate body 10 and enabling the particles not to be easily diffused out of the landing prevention plate body 10.
In practical application, the anti-landing plate body 10 is located at the bottom of the interior of the ion source chamber, and the anti-landing plate body 10 and the anti-diffusion structure located at the opening 30 thereof form a semi-closed chamber structure, which enables particles (particles) generated in the ion source chamber to smoothly fall into the anti-landing plate body 10, and prevents the particles (particles) generated in the anti-landing plate body 10 from diffusing to the upper part of the ion source chamber, so as to achieve the effect of collecting the particles in the ion source chamber, and prevent the deposited particles from diffusing to cause the problem of contamination of the ion source chamber.
Under the effect of the diffusion-proof structure of the plate-preventing device, in the ion implantation process, particles deposited in the plate-preventing body 10 can be effectively prevented from diffusing to the electrode plate, the accumulation of the particles of the electrode plate is effectively reduced, the discharge of the electrode plate is effectively improved, the stability and the uniformity of an ion Beam (Beam) are improved, and the service life of the electrode plate is ensured. Meanwhile, the particles are effectively prevented from being diffused to the analysis magnetic field chamber, the accumulation of the particles in the analysis magnetic field chamber (Beam Line) is effectively reduced, the service life of a carbon plate component in the Beam Line is prolonged, and the PM (equipment maintenance) frequency is reduced. In addition, the Particle diffusion of the Particle in the process chamber is effectively prevented, the Particle pollution on the surface of the substrate in the process chamber is improved, the AOI (imaging and inspection) defects are effectively reduced, the problem of stability and uniformity of ion implantation of the substrate area shielded by the Particle is improved, and the phenomenon of point defect of the substrate is reduced.
In addition, as for particles deposited in the lower landing prevention plate body 10, cleaning can be performed at the time of PM (equipment maintenance) work such as electrode plate replacement of the ion implanter.
In the disclosed embodiment, the weather shield body 10 may include a bottom structure and a plurality of sidewalls on edges of the bottom structure. For example, as shown in fig. 2, the protection plate body 10 includes a bottom structure 101, a first sidewall 102 and a second sidewall 103, wherein the first sidewall 102 and the second sidewall 103 are oppositely disposed, i.e., the first sidewall 102 is located on a first side of the bottom structure 101, and the second sidewall 103 is located on a second side of the bottom structure 101, which is opposite to the first side.
Fig. 2 illustrates a specific implementation of the diffusion preventing structure, and in some embodiments, as shown in fig. 2, the diffusion preventing structure may include a plurality of barrier ribs 20 disposed at intervals. The surface of the barrier rib 20 facing the top of the ion source chamber may be curved, and the surface of the barrier rib 20 facing the bottom of the baffle body 10 may also be curved. By providing the surface of the barrier rib 20 facing the top of the ion source chamber with a curved surface shape, on one hand, it is beneficial for particles generated inside the ion source chamber to smoothly fall into the anti-landing plate body 10, and the particles are not easy to diffuse out of the anti-landing plate body 10, and on the other hand, the particles are not easy to deposit on the surface of the barrier rib 20 and diffuse.
As shown in fig. 2, in some embodiments, the size of the gap D between the barrier ribs 20 may be set to a range of 5 millimeters (mm) to 15 millimeters (mm). Due to the fact that the size of the gap D between the barrier strips 20 is small, the curved barrier strips 20 are arranged, and Particle can easily fall into the baffle body 10 from the inside of the ion source chamber and is not easy to diffuse out. In the embodiment of the present disclosure, the size of the gap D between the barrier ribs 20 may also be specifically set according to actual needs, which is not limited by the embodiment of the present disclosure.
In some embodiments, as shown in fig. 2, a plurality of barrier ribs 20 are disposed on the first sidewall 102 at intervals, wherein the plurality of barrier ribs 20 are disposed side by side on a side of the first sidewall 102 away from the bottom structure 101; a plurality of barrier ribs 20 are disposed on the second sidewall 103 at intervals, wherein the plurality of barrier ribs 20 are disposed side by side on a side of the second sidewall 103 away from the bottom structure 101. Wherein the barrier rib 20 on the first sidewall 102 and the barrier rib 20 on the second sidewall 103 may be symmetrically disposed in a direction perpendicular to the bottom structure 101.
As shown in fig. 2, for each barrier rib 20 on the first sidewall 102, one end of the barrier rib 20 is detachably or fixedly disposed on the first sidewall 102, and the barrier rib 20 is disposed obliquely in a direction perpendicular to the bottom of the weather shield body 10. For example, as shown in fig. 2, each of the barrier ribs 20 on the first sidewall 102 is obliquely disposed in a direction close to the bottom of the fence body 10. With this arrangement, particle can be more easily dropped into the anti-landing board body 10 and is not easily deposited on the surface of the barrier rib 20.
In some embodiments, each barrier rib 20 on the first sidewall 102 may also be disposed horizontally, i.e., perpendicular to the first sidewall 102.
As shown in fig. 2, for each barrier rib 20 on the second sidewall 103, one end of the barrier rib 20 is detachably or fixedly disposed on the second sidewall 103, and the barrier rib 20 is disposed obliquely in a direction perpendicular to the bottom of the weather shield body 10. For example, as shown in fig. 2, each of the barrier ribs 20 on the second sidewall 103 is obliquely disposed in a direction approaching the bottom of the fence body 10. With this arrangement, particle can be more easily dropped into the anti-landing board body 10 and is not easily deposited on the surface of the barrier rib 20.
In some embodiments, each barrier rib 20 on the second sidewall 102 may also be disposed horizontally, i.e., perpendicular to the second sidewall 102.
As shown in fig. 2, the barrier ribs 20 on the first sidewall 102 and the barrier ribs 20 on the second sidewall 103 may be disposed in a one-to-one correspondence, and the other ends of the barrier ribs 20 on the first sidewall 102 and the other ends of the corresponding barrier ribs 20 on the second sidewall 103 may be disposed at intervals or disposed in an abutting manner.
In some embodiments, one end of the barrier rib 20 is detachably disposed on the first sidewall 102, and the other end of the barrier rib 20 is detachably disposed on the second sidewall 103, wherein the barrier rib 20 may be disposed horizontally or obliquely. It should be noted that the drawings of the embodiments of the present disclosure do not show the arrangement of such a situation, and the drawings only show an example of the situation where a plurality of barrier ribs 20 are respectively arranged on the first side wall 102 and the second side wall 103.
In some embodiments, the blocking strip 20 may be a cylindrical rod, and when the blocking strip 20 is detachably disposed on the sidewall of the weather shield body 10, the cylindrical blocking strip 20 can be easily detached and installed. In some embodiments, the barrier rib 20 is detachably provided to the sidewall of the landing prevention body 10, which makes the landing prevention device easy to clean and maintain.
Fig. 3 is a schematic structural diagram of another attachment prevention device provided in an embodiment of the present disclosure, and fig. 3 exemplarily shows another specific implementation manner of the diffusion prevention structure, and in some embodiments, as shown in fig. 3, the diffusion prevention structure includes a baffle 40, the baffle 40 is disposed opposite to a bottom structure 101 of the attachment prevention body 10, the baffle 40 has a plurality of vias 50, where the plurality of vias 50 are uniformly distributed on the baffle 40. Wherein the thickness of the via hole 50 (i.e., the thickness of the blocking plate 40) may be set to range from 2 millimeters (mm) to 8 millimeters (mm). By the arrangement, particles generated in the ion source chamber can fall into the anti-landing plate body 10 through the uniformly distributed through holes 50, the baffle 40 has a certain thickness, namely, the through holes 50 have a certain thickness, and the particles deposited in the anti-landing plate body 10 are not easy to diffuse out of the through holes 50. The thickness of the via hole 50 (i.e., the thickness of the baffle 40) may also be set according to practical situations, which is not limited by the embodiment of the present disclosure.
In some embodiments, the shape of the via 50 may be cylindrical, rectangular, truncated, etc. In some embodiments, the diffusion preventing structure may employ a grating plate structure.
Fig. 4 is a schematic structural view of another attachment prevention device provided in an embodiment of the present disclosure, and in some embodiments, as shown in fig. 4, at least one sidewall of the attachment prevention plate body 10 has a cleaning valve hole 60, and the cleaning valve hole 60 is used for cleaning particles in the attachment prevention plate body 10.
Fig. 5 is a schematic structural diagram of an ion source chamber provided in an embodiment of the present disclosure, in practical application, as shown in fig. 4 and fig. 5, the plate attachment prevention device 80 is applied to the ion source chamber, the ion source chamber further includes a chamber body 70, the plate attachment prevention device 80 is located at the bottom inside the chamber body 70, the chamber body 70 has a valve hole 90 connected to the cleaning valve hole 60 on the plate attachment prevention body 10, the valve hole 90 on the chamber body 70 is connected to the cleaning valve hole 60 on the plate attachment prevention body 10 through a vacuum tube, and the vacuum tube has a cleaning valve 100. The cleaning valve 100 is opened through breaking vacuum, so that the Particle deposited in the ion source chamber can be cleaned, excessive deposition of the Particle can be effectively prevented, the operation is simple, cleaning can be performed without opening the cavity, and the cleaning difficulty is reduced.
In some embodiments, as shown in fig. 2 and 3, the cross-sectional shape of the fence body 10 is U-shaped.
In some embodiments, as shown in fig. 4, the cross-sectional shape of the protection plate body 10 is an inverted trapezoid. The structure that the upper part of the inverted trapezoid is wide and the lower part of the inverted trapezoid is narrow can enable the Particle to smoothly slide to the bottom, effectively reduce the diffusion area of the Particle and enhance the collection effect of the Particle.
In some embodiments, the cross-sectional shape of the landing plate body 10 may also be a funnel shape (not shown), and the bottom of the body has a cleaning valve hole (not shown) for cleaning particles in the landing plate body 10.
The embodiment of the present disclosure further provides an ion source chamber, as shown in fig. 5, the ion source chamber includes a chamber body 70 and a plate attachment prevention device 80 located at the bottom inside the chamber body 70, the plate attachment prevention device 80 is the plate attachment prevention device provided in any of the embodiments, and for specific description of the plate attachment prevention device, reference may be made to the description of the embodiments, and details are not repeated herein.
In some embodiments, as shown in fig. 5 and 4, the cross-sectional shape of the bottom of the inside of the chamber body 70 is the same as that of the anti-attachment plate body 10, and the bottom of the inside of the chamber body 70 and the anti-attachment plate body 10 are cooperatively disposed, so that the anti-attachment plate body 10 can be engaged with the bottom of the inside of the chamber body 70.
In addition, an embodiment of the present disclosure further provides an ion implanter, which includes the ion source chamber provided in any of the embodiments described above, and for the description of the ion source chamber, reference may be made to the description in the embodiments described above, and details are not repeated herein.
It is to be understood that the above embodiments are merely exemplary embodiments that are employed to illustrate the principles of the present disclosure, and that the present disclosure is not limited thereto. It will be apparent to those skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the disclosure, and these are to be considered as the scope of the disclosure.
Claims (12)
1. The anti-attachment plate device is arranged at the bottom inside an ion source chamber of an ion implanter and is characterized by comprising an anti-attachment plate body, wherein the anti-attachment plate body is provided with an opening facing the top of the ion source chamber, and a diffusion preventing structure is arranged at the opening;
the diffusion preventing structure is used for enabling particles generated in the ion source chamber to fall into the plate attachment preventing body, and enabling the particles not to diffuse out of the plate attachment preventing body easily.
2. The apparatus of claim 1, wherein the diffusion preventing structure comprises a plurality of spaced barrier ribs, and a surface of the barrier ribs facing the top of the ion source chamber is curved.
3. The device of claim 2, wherein the body has a first side wall and a second side wall opposite to each other, and a plurality of spaced-apart barrier strips are disposed on the first side wall and the second side wall, respectively;
for each barrier strip on the first side wall, one end of the barrier strip is arranged on the first side wall, and the barrier strip is obliquely arranged along the direction vertical to the bottom of the defending plate body;
and aiming at each barrier strip on the second side wall, one end of the barrier strip is arranged on the second side wall, and the barrier strip is obliquely arranged along the direction vertical to the bottom of the anti-attachment plate body.
4. The device of claim 2, wherein the body has first and second oppositely disposed sidewalls, one end of the barrier strip being removably disposed on the first sidewall and the other end of the barrier strip being removably disposed on the second sidewall.
5. The device of claim 1, wherein the diffusion barrier comprises a baffle having a plurality of uniformly distributed through holes.
6. The attachment plate device of claim 1 wherein the attachment plate body has a plurality of side walls, at least one side wall of the attachment plate body having a cleaning valve aperture for cleaning particles in the attachment plate body.
7. The fencing device of any one of claims 1-6, wherein the fencing body is U-shaped in cross-section.
8. The fencing device of any one of claims 1-6, wherein the fencing body has an inverted trapezoidal cross-sectional shape.
9. The attachment plate device of any of claims 1-5 wherein the attachment plate body is funnel shaped in cross section with a cleaning valve hole in the bottom for cleaning particles in the attachment plate body.
10. An ion source chamber comprising a chamber body and a shield assembly located at the bottom of the interior of the chamber body, the shield assembly being as claimed in any one of claims 1 to 9.
11. The ion source chamber of claim 10, wherein the cross-sectional shape of the bottom of the chamber body interior is the same as the cross-sectional shape of the shield body.
12. An ion implanter comprising an ion source chamber according to claim 10 or 11.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010351489.2A CN111524779B (en) | 2020-04-28 | 2020-04-28 | Prevent board device and ion source cavity, ion implantation machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010351489.2A CN111524779B (en) | 2020-04-28 | 2020-04-28 | Prevent board device and ion source cavity, ion implantation machine |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111524779A CN111524779A (en) | 2020-08-11 |
| CN111524779B true CN111524779B (en) | 2023-02-17 |
Family
ID=71905109
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010351489.2A Active CN111524779B (en) | 2020-04-28 | 2020-04-28 | Prevent board device and ion source cavity, ion implantation machine |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111524779B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58100334A (en) * | 1981-12-09 | 1983-06-15 | Mitsubishi Electric Corp | Ion source device |
| CN101026078A (en) * | 2006-02-23 | 2007-08-29 | 恩益禧电子股份有限公司 | Ion injection device |
| CN101441983A (en) * | 2007-11-21 | 2009-05-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma confinement apparatus and semiconductor processing equipment applying the same |
| CN206116344U (en) * | 2016-10-21 | 2017-04-19 | 中芯国际集成电路制造(北京)有限公司 | Ion source terminates ware and ion implantation device |
| CN109097739A (en) * | 2018-08-02 | 2018-12-28 | 京东方科技集团股份有限公司 | One kind preventing plate and evaporated device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050133736A1 (en) * | 2003-12-17 | 2005-06-23 | Otto Chen | Ion implantation apparatus and partical collection structure thereof |
| EP1891657A2 (en) * | 2005-06-03 | 2008-02-27 | Axcelis Technologies, Inc. | Beam stop and beam tuning methods |
-
2020
- 2020-04-28 CN CN202010351489.2A patent/CN111524779B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58100334A (en) * | 1981-12-09 | 1983-06-15 | Mitsubishi Electric Corp | Ion source device |
| CN101026078A (en) * | 2006-02-23 | 2007-08-29 | 恩益禧电子股份有限公司 | Ion injection device |
| CN101441983A (en) * | 2007-11-21 | 2009-05-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma confinement apparatus and semiconductor processing equipment applying the same |
| CN206116344U (en) * | 2016-10-21 | 2017-04-19 | 中芯国际集成电路制造(北京)有限公司 | Ion source terminates ware and ion implantation device |
| CN109097739A (en) * | 2018-08-02 | 2018-12-28 | 京东方科技集团股份有限公司 | One kind preventing plate and evaporated device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111524779A (en) | 2020-08-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7601242B2 (en) | Plasma processing system and baffle assembly for use in plasma processing system | |
| TWI404106B (en) | Ion implantation system, device for reducing contamination in ion implantation system and method for controlling contamination in ion implantation | |
| Selwyn et al. | Plasma particulate contamination control. II. Self‐cleaning tool design | |
| CN111524779B (en) | Prevent board device and ion source cavity, ion implantation machine | |
| US7897939B2 (en) | Removable liners for charged particle beam systems | |
| CN108364862B (en) | Ion implantation equipment and ion implantation method thereof | |
| JP2007305485A (en) | Arc discharge device, and ion implantation device using the same | |
| JP4614569B2 (en) | Suction type ionizer | |
| CN210956591U (en) | Processing equipment of IGBT chip with composite gate structure | |
| CN111261482B (en) | Ion implantation device and method for trapping pollutant particles during ion implantation | |
| CN215997886U (en) | Protection device for be used for nuclear power station laser decontamination | |
| CN113649852A (en) | Cutting fluid cooling and separating device and five-axis machining center | |
| KR20160028633A (en) | Hybrid Collector | |
| KR20170093872A (en) | Substrate processing device | |
| DE102010049017A1 (en) | Device for coating a substrate | |
| DE102016109124B4 (en) | Ion beam generating device and substrate treatment system | |
| US9947428B2 (en) | Atomic beam source | |
| CN220004579U (en) | Enamelling machine case peculiar smell collecting cover | |
| CN216849893U (en) | Bearing device | |
| CN115410884A (en) | Magnetic analyzer and ion implanter | |
| CN209860436U (en) | Be applied to shutter water guide piece in outdoor distribution box | |
| TWM647640U (en) | In-chamber dust collection device | |
| US20100167544A1 (en) | Door assembly for substrate processing chamber | |
| CN113731031B (en) | Filter cylinder dust remover easy for ash removal | |
| CN219580154U (en) | Novel spark interception device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |