CN111512423A - Mounting method and mounting device - Google Patents
Mounting method and mounting device Download PDFInfo
- Publication number
- CN111512423A CN111512423A CN201880082929.XA CN201880082929A CN111512423A CN 111512423 A CN111512423 A CN 111512423A CN 201880082929 A CN201880082929 A CN 201880082929A CN 111512423 A CN111512423 A CN 111512423A
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- Prior art keywords
- semiconductor chip
- adhesive sheet
- mounting
- circuit board
- head
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000000853 adhesive Substances 0.000 claims abstract description 198
- 230000001070 adhesive effect Effects 0.000 claims abstract description 198
- 239000004065 semiconductor Substances 0.000 claims abstract description 184
- 239000000758 substrate Substances 0.000 claims abstract description 89
- 230000001678 irradiating effect Effects 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 10
- 238000009434 installation Methods 0.000 claims description 4
- 238000003825 pressing Methods 0.000 claims description 3
- 239000002313 adhesive film Substances 0.000 description 20
- 238000010586 diagram Methods 0.000 description 15
- 239000012790 adhesive layer Substances 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- LEYJJTBJCFGAQN-UHFFFAOYSA-N chembl1985378 Chemical compound OC1=CC=C2C=CC=CC2=C1N=NC(C=C1)=CC=C1N=NC1=CC=C(S(O)(=O)=O)C=C1 LEYJJTBJCFGAQN-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Die Bonding (AREA)
- Wire Bonding (AREA)
- Led Device Packages (AREA)
Abstract
Provided are a mounting method and a mounting apparatus for mounting a semiconductor chip on a circuit board with high accuracy and stability. Specifically, the following steps are sequentially performed: a 1 st transfer step of preparing a 1 st adhesive sheet (4a) on the 2 nd surface side of the semiconductor chip (1), and transferring the semiconductor chip (1) to the 1 st adhesive sheet (4a) so that the semiconductor chip (1) is peeled off from the carrier substrate (2) and attached to the 1 st adhesive sheet (4a) by irradiating the 1 st surface of the semiconductor chip (1) with laser light (11) through the carrier substrate (2), wherein the 2 nd surface is the surface opposite to the 1 st surface; a 2 nd transfer step of preparing a 2 nd adhesive sheet (4b) on the 1 st surface side of the semiconductor chip (1), and transferring the semiconductor chip (1) to the 2 nd adhesive sheet (4b) so that the semiconductor chip (1) is peeled off from the 1 st adhesive sheet (4a) and adhered to the 2 nd adhesive sheet (4b) by irradiating the 2 nd surface of the semiconductor chip (1) with laser light (11) through the 1 st adhesive sheet (4 a); and a mounting step of mounting the semiconductor chip (1) on the circuit board (6) by holding the surface of the 2 nd adhesive sheet (4b) on the side where the semiconductor chip (1) is not transferred by a head (32) and thermocompression-bonding the semiconductor chip (1) and the circuit board (6) via the head (32).
Description
Technical Field
The present invention relates to a mounting method and a mounting apparatus for mounting a semiconductor chip with high accuracy and stability.
Background
Particularly L ED for a display is required to mount a semiconductor chip of 50um × 50um or less called micro L ED at high speed with accuracy of several um.
Documents of the prior art
Patent document
Patent document 1: japanese patent No. 5783481
Disclosure of Invention
Problems to be solved by the invention
However, the mounting method described in patent document 1 has the following problems: the adhesive layer may remain on the semiconductor chip, and stable mounting is difficult due to variation in the amount of the adhesive layer.
The present invention has been made to solve the above problems, and an object of the present invention is to provide a mounting method and a mounting apparatus for mounting a semiconductor chip on a circuit board with high accuracy and stability.
Means for solving the problems
In order to solve the above problem, a mounting method of the present invention is a mounting method for mounting a semiconductor chip after dicing, the semiconductor chip having a 1 st surface held on a carrier substrate, on a circuit board, the mounting method sequentially performing: a 1 st transfer step of preparing a 1 st adhesive sheet on a 2 nd surface side of the semiconductor chip, the 2 nd surface being a surface opposite to the 1 st surface, and transferring the semiconductor chip to the 1 st adhesive sheet by irradiating the 1 st surface of the semiconductor chip with laser light through the carrier substrate so that the semiconductor chip is peeled off from the carrier substrate and attached to the 1 st adhesive sheet; a 2 nd transfer step of preparing a 2 nd adhesive sheet on the 1 st surface side of the semiconductor chip, and transferring the semiconductor chip to the 2 nd adhesive sheet so that the semiconductor chip is peeled off from the 1 st adhesive sheet and attached to the 2 nd adhesive sheet by irradiating the 2 nd surface of the semiconductor chip with laser light through the 1 st adhesive sheet; and a mounting step of holding the surface of the 2 nd adhesive sheet on the side where the semiconductor chip is not transferred by a head, and thermally pressing the semiconductor chip and the circuit board via the head to mount the semiconductor chip on the circuit board.
In this mounting method, since the semiconductor chip is mounted on the circuit board without using an adhesive layer, the semiconductor chip can be mounted without leaving an excessive substance on the surface of the semiconductor chip facing the circuit board, and can be mounted on the circuit board with high accuracy and stability.
In the mounting method, an adhesion reducing step of reducing the adhesion of the 1 st adhesive sheet may be provided between the 1 st transfer step and the 2 nd transfer step.
Thus, the 2 nd transfer step can be easily performed.
In addition, the adhesion reducing step may reduce the adhesion by heating the 1 st adhesive sheet and the semiconductor chip.
Thus, the adhesive strength of the 1 st adhesive sheet can be easily reduced.
In addition, the thermal expansion coefficient of the surface of the head in contact with the 2 nd adhesive sheet, the material of the 2 nd adhesive sheet, and the thermal expansion coefficient of the surface of the circuit board on which the semiconductor chip is mounted may be equal to each other, and in the mounting step, the temperature of the 2 nd adhesive sheet and the temperature of the surface of the circuit board on which the semiconductor chip is transferred may be controlled so as to be always equal to each other.
Thus, the circuit board and the 2 nd adhesive sheet can be prevented from being displaced due to a difference in thermal expansion coefficient in the mounting step, and the semiconductor chip can be prevented from being peeled off from the circuit board.
The material of the surface of the head in contact with the 2 nd adhesive sheet, the material of the 2 nd adhesive sheet, and the material of the surface of the circuit board on which the semiconductor chip is mounted may be the same.
Thus, the circuit board and the 2 nd adhesive sheet can be further prevented from being positionally displaced in the mounting step.
In order to solve the above problem, a mounting apparatus according to the present invention is a mounting apparatus for mounting a semiconductor chip after dicing, the semiconductor chip having a 1 st surface held on a carrier substrate, on a circuit board mounted on a mounting table, the mounting apparatus including: a 1 st adhesive sheet holding portion for holding a 1 st adhesive sheet to which a 2 nd surface of the semiconductor chip is to be bonded, the 2 nd surface being a surface opposite to the 1 st surface; a 2 nd adhesive sheet holding portion for holding a 2 nd adhesive sheet, the 2 nd adhesive sheet receiving the 1 st surface of the semiconductor chip; a laser irradiation unit that irradiates laser light; and a head for holding the 2 nd adhesive sheet holding the semiconductor chip and capable of pressurizing and heating the semiconductor chip with respect to the circuit board placed on the placing table.
With this mounting device, since the semiconductor chip is mounted on the circuit board without using an adhesive layer, the semiconductor chip can be mounted without leaving an excessive substance on the surface of the semiconductor chip facing the circuit board, and can be mounted on the circuit board with high accuracy and stability.
Effects of the invention
According to the mounting method and the mounting apparatus of the present invention, the semiconductor chip can be mounted on the circuit board with high accuracy and stability.
Drawings
Fig. 1 is a diagram illustrating a first transfer step of the mounting method of the present invention.
Fig. 2 is a diagram illustrating an adhesion reducing step in the mounting method of the present invention.
Fig. 3 is a diagram illustrating the 2 nd transfer step of the mounting method of the present invention.
Fig. 4 is a diagram illustrating the 2 nd transfer step in another embodiment.
Fig. 5 is a diagram illustrating a mounting process of the mounting method of the present invention.
Fig. 6 is a diagram illustrating an example of failure in the mounting process.
Fig. 7 is a diagram illustrating a mounting device of the present invention.
Fig. 8 is a diagram illustrating a laser transfer unit in the mounting device of the present invention.
Fig. 9 is a diagram illustrating an adhesive sheet mounting portion in the mounting device of the present invention.
Fig. 10 is a diagram illustrating a mounting portion in the mounting device of the present invention.
Detailed Description
The mounting method of the present invention will be described with reference to fig. 1 to 5. Fig. 1 is a diagram illustrating a first transfer step of the mounting method of the present invention. Fig. 2 is a diagram illustrating an adhesion reducing step in the mounting method of the present invention. Fig. 3 is a diagram illustrating the 2 nd transfer step of the mounting method of the present invention. Fig. 4 is a diagram illustrating the 2 nd transfer step in another embodiment. Fig. 5 is a diagram illustrating a mounting process of the mounting method of the present invention.
In the present invention, of the two main surfaces of the semiconductor chip, the surface held by the carrier substrate is defined as the 1 st surface, the surface opposite to the 1 st surface is defined as the 2 nd surface, and the bump is formed on the 2 nd surface and is bonded to the circuit board.
First, a first transfer step 1 of the mounting method of the present invention will be described with reference to fig. 1, in which fig. 1 (a) shows a plurality of diced semiconductor chips 1 whose 1 st surface is held on a carrier substrate 2, the carrier substrate 2 is also extended in the depth direction of fig. 1, has a circular or quadrangular shape, and is made of silicon, gallium arsenide, sapphire, or the like, and a plurality of semiconductor chips 1 (several hundreds to several tens of thousands) are two-dimensionally arranged along the width of the carrier substrate 2. in a small semiconductor chip 1 called a mini L ED, a size of 50um × 50um or less is arranged at a pitch obtained by adding a dicing width to the size, and such a small semiconductor chip 1 is required to be mounted on a circuit board 6 with high accuracy (for example, accuracy of 1um or less), and in the semiconductor chip 1 of the present embodiment, each semiconductor chip 1 is inspected in advance to remove a defective chip, and specifically, a bump is formed on the 2 nd surface of the semiconductor chip 1.
Fig. 1 (b) shows a 1 st adhesive sheet sticking step of sticking the 2 nd surface of the semiconductor chip 1, which is the surface opposite to the 1 st surface held by the carrier substrate 2, to the 1 st adhesive sheet 4 a. The 1 st adhesive sheet 4a is first held by vacuum suction in a 1 st adhesive sheet mounting portion 21 described later, and an adhesive film 3a is formed on a surface to which the semiconductor chip 1 is to be bonded. The adhesive film 3a of the present embodiment has the following characteristics: the adhesive has adhesiveness at normal temperature, but the adhesive strength is reduced by heating. In the 1 st adhesive sheet sticking step, the carrier substrate 2 holding the semiconductor chip 1 is sucked and manipulated by a robot arm 40 described later, and the 2 nd surface of the semiconductor chip 1 is stuck to the adhesive film 3a of the 1 st adhesive sheet 4a held by the 1 st adhesive sheet holding portion 21.
Next, a carrier substrate removing step is performed on the 1 st adhesive sheet 4a to which the semiconductor chip 1 is attached together with the carrier substrate as described above, in the carrier substrate removing step, the semiconductor chip 1 is peeled and removed from the carrier substrate 2 by a method called laser peeling, for example, in the micro L ED, excimer laser is irradiated to the carrier substrate 2, the laser light 11 is irradiated to the 1 st surface of the semiconductor chip 1 through the carrier substrate 2, a part of the GaN layer of the micro L ED as the semiconductor chip 1 is decomposed into Ga and N, the semiconductor chip 1 is peeled from the carrier substrate 2 made of sapphire, and the robot arm 40 vacuum-sucking the carrier substrate 2 is separated from the 1 st adhesive sheet 4a, and all the semiconductor chips 1 are removed from the carrier substrate 2 irradiated with the laser light 11.
After the first adhesive sheet attaching step 1 and the carrier substrate removing step, the semiconductor chip 1 is transferred from the carrier substrate 2 to the first adhesive sheet 4a as shown in fig. 1 (c). In the present description, the step of transferring the semiconductor chip 1 from the carrier substrate 2 to the 1 st adhesive sheet 4a is referred to as the 1 st transfer step.
In the above description, the carrier substrate 2 is removed after the 2 nd surface of the semiconductor chip 1 is bonded to the 1 st adhesive sheet 4a in the 1 st transfer step, but the present invention is not limited to this, and the semiconductor chip 1 may be moved from the carrier substrate 2 to the 1 st adhesive sheet 4a to be bonded to the 1 st adhesive sheet 4a by applying a thrust force generated by decomposing a part of the GaN layer of the micro L ED into Ga and N when the carrier substrate 2 is irradiated with laser light in a state where the 1 st adhesive sheet 4a is prepared at a position slightly apart from the 2 nd surface of the semiconductor chip 1, and the semiconductor chip 1 may be moved from the carrier substrate 2 to the 1 st adhesive sheet 4a to be bonded to the 1 st adhesive sheet 4 a.
In the present embodiment, the carrier substrate 2 is irradiated with laser light in the carrier substrate removal step, and the carrier substrate 2 is peeled and removed from the semiconductor chip 1 by laser peeling, but this is not necessarily the only option and may be appropriately changed, for example, the carrier substrate 2 may be chipped and removed from the side opposite to the side on which the semiconductor chip 1 is provided, which is called back grinding (backsgrind), and particularly in the case of red L ED, laser peeling cannot be applied, and therefore, this method of back grinding is used.
Next, the adhesion reducing step shown in fig. 2 is performed. In the adhesion-reducing step, the adhesive film 3a of the 1 st adhesive sheet 4a is heated to a predetermined temperature, thereby reducing the adhesion of the adhesive film 3 a. In the present embodiment, since the adhesive film 3a having the property of reducing the adhesive force by heating is used, the adhesive film 3a is heated in the adhesive force reducing step, but the adhesive force reducing step is not limited to this, and in the case of using the adhesive film 3a in which the adhesive force changes by irradiation with light such as UV light, the adhesive force reducing step is performed by irradiating light to the adhesive film 3 a.
On the other hand, if the after-mentioned 2 nd transfer step can be performed without reducing the adhesive strength, the adhesive strength reducing step is not necessarily required.
In addition, when the adhesive strength of the 1 st adhesive sheet 4a is reduced by heating in the adhesive strength reducing step, there is a possibility that the 1 st adhesive sheet 4a is thermally expanded and the arrangement interval of the semiconductor chips 1 is expanded, and the process may be transferred to the 2 nd adhesive sheet 4b and performed thereafter. In this case, when the semiconductor chip 1 is mounted on the circuit board 6, the mounting position of the semiconductor chip 1 may be shifted. In order to prevent this, the 1 st adhesive sheet 4a may be made of a material having a small thermal expansion coefficient, such as quartz or glass. Further, as a material of the adhesive film 3a, a material whose adhesive strength is reduced by heating but does not recover even after cooling, and after the 1 st adhesive sheet 4a is heated in the adhesive strength reducing step, the 1 st adhesive sheet 4a may be cooled to a temperature before heating before the semiconductor chip 1 is transferred to the 2 nd adhesive sheet 4 b.
Next, the 2 nd transfer step shown in fig. 3 (a) and (b) is performed. In the 2 nd transfer step, as shown in fig. 3 (a), the 1 st adhesive sheet 4a is held with the adhesive film 3a and the semiconductor chip 1 facing downward, and the 2 nd adhesive sheet 4b having the adhesive film 3b is disposed below the 1 st adhesive sheet 4 a.
Then, as shown by the velocity v1 in fig. 3 (a), the 1 st adhesive sheet 4a is moved relative to the irradiation portion of the laser beam 11, the laser beam 11 is irradiated at a timing when the semiconductor chip 1 comes directly below the irradiation portion of the laser beam 11, and the laser beam 11 penetrates through the 1 st adhesive sheet 4a to reach the interface between the adhesive film 3a and the 2 nd surface of the semiconductor chip 1, thereby laser-peeling the semiconductor chip 1. Specifically, gas is generated from the adhesive film 3a by irradiation of the laser beam 11, and the semiconductor chip 1 is urged by the generation of the gas, so that the semiconductor chip 1 flies downward from the 1 st adhesive sheet 4 a. When the semiconductor chip 1 is a GaN chip, the semiconductor chip can be decomposed into Ga and N by irradiation with the laser beam 11 to generate N2, and the semiconductor chip can be expanded to be laser-peeled.
At this time, by moving the 2 nd adhesive sheet 4b relative to the 1 st adhesive sheet 4a in advance as indicated by the velocity v2 in fig. 3 (a), the semiconductor chip 1 can be landed on the adhesive film 3b on the 2 nd adhesive sheet 4b at an arbitrary interval as shown in fig. 3 (b) according to the relative movement velocity, and the semiconductor chip 1 can be bonded to the 2 nd adhesive sheet 4 b. In this way, the semiconductor chips 1 that are cut on the carrier substrate 2 and densely arranged on the 1 st adhesive sheet 4a can be arranged on the 2 nd adhesive sheet 4b at arbitrary intervals. For example, in order to sequentially arrange three types of semiconductor chips such as RGB, the semiconductor chips 1 need to be arranged on the circuit board 6 by a mounting process described later while securing a space between at least two chips, and the above transfer method can be used.
The 1 st surface of the semiconductor chip 1 transferred to the 2 nd adhesive sheet 4b faces the 2 nd adhesive sheet 4 b.
Here, by performing laser lift-off in a vacuum environment, the semiconductor chip 1 is caused to fly straight to the 2 nd adhesive sheet 4b without the influence of air resistance, and positional displacement of the semiconductor chip 1 on the 2 nd adhesive sheet 4b can be prevented.
In order to perform laser lift-off as described above, the 1 st adhesive sheet 4a needs to be made of a material that transmits the laser beam 11. Specifically, quartz, glass, or the like is preferably used as the material. The 1 st adhesive sheet 4a may be formed in a thin film shape so as to transmit the laser beam 11.
Fig. 4 (a) and (b) show another embodiment of the second transfer step 2. In the embodiment shown in fig. 3 (a) and (b), the laser irradiation unit 12 irradiates the linear laser beam 11, but in the embodiment shown in fig. 4, a spot-like laser beam is irradiated, and only one semiconductor chip is laser-detached in one irradiation. The irradiation position of the laser beam 11 is changed by a galvano mirror, and only the semiconductor chip 1 to be transferred to the 2 nd adhesive sheet 4b is selected and irradiated with the laser beam 11. Fig. 4 (a) shows the irradiation start timing of the laser beam 11, and fig. 4 (b) shows the timing when a predetermined time has elapsed from the start of irradiation, and by selecting only the semiconductor chip 1 to be transferred to the 2 nd adhesive sheet 4b and irradiating the semiconductor chip with the laser beam 11, the semiconductor chip 1 can be transferred to the 2 nd adhesive sheet 4b at an arbitrary interval, as in the embodiment of fig. 3 (a) and (b).
Next, the mounting steps shown in fig. 5 (a) and (b) are performed. In the mounting step, as shown in fig. 5 (a), a head 32, which will be described later, holds the surface of the 2 nd adhesive sheet 4b on which the semiconductor chip 1 is not transferred, and causes the circuit board 6 placed on a mounting table 31, which will be described later, to face the semiconductor chip 1 held by the 2 nd adhesive sheet 4 b.
Then, the head 32 is brought close to the circuit board 6, and as shown in fig. 5 (b), the bumps provided on the 2 nd surface of the semiconductor chip 1 are brought into contact with the circuit board 6, and further pressure is applied.
In the present embodiment, the transfer layer 5 is provided on the surface of the circuit board 6 against which the semiconductor chip 1 abuts, and after the semiconductor chip 1 abuts on the transfer layer 5, the semiconductor chip 1 is held by the transfer layer 5.
The head 32 is provided with a heater 35, and when the semiconductor chip 1 is pressurized, the heater 35 is operated to raise the temperature of the head 32 to a temperature at which the bumps included in the semiconductor chip 1 melt, thereby heating the bumps of the semiconductor chip 1 and melting the bumps. As a result, the semiconductor chip 1 is thermocompression bonded to the circuit board 6 and firmly bonded. That is, the semiconductor chip 1 is mounted on the circuit board 6.
Then, the head 32 is separated from the circuit board 6 with the 2 nd adhesive sheet 4b held, and the semiconductor chip 1 is separated from the 2 nd adhesive sheet 4b, thereby completing the mounting of the semiconductor chip 1 on the circuit board 6.
In the present embodiment, as shown in fig. 5 (b), thermal compression bonding of a plurality of semiconductor chips 1 is simultaneously performed by one mounting step, and particularly, when the semiconductor chip 1 is a micro L ED, the number of semiconductor chips 1 mounted on one circuit board 6 is several tens of thousands, and in this case, for example, in an FHD (Full High Definition) panel, 1920 × 1080 × 3 semiconductor chips 1 are arranged on one panel, and all the semiconductor chips 1 are transferred to one 2 nd adhesive sheet 4b and held by a head 32 and thermally compressed collectively, whereby the time required for mounting can be significantly reduced.
Here, in the present embodiment, the thermal expansion coefficient of at least the surface of the head 32 in contact with the 2 nd adhesive sheet 4b (the tip of the head 32), the thermal expansion coefficient of the 2 nd adhesive sheet 4b, and the thermal expansion coefficient of the surface of the circuit board 6 on which the semiconductor chip 1 is mounted are equal. Further, it is preferable that the tip of the head 32, the 2 nd adhesive sheet 4b, and the surface of the circuit board 6 on which the semiconductor chip 1 is mounted be made of the same material. Specifically, when the material of the circuit board 6 is glass, the material of the head 32 and the material of the 2 nd adhesive sheet 4b are glass, as in the case of the circuit board 6. When the material of the circuit board 6 is copper, SUS304 is used as the material of the head 32 and the 2 nd adhesive sheet 4 b. In this case, the thermal expansion coefficient of copper was 16.8ppm, while the thermal expansion coefficient of SUS304 was 17.3ppm, and the difference was about 3%.
Further, not only the head 32 has the heater 35, but also the heater 34 is provided in the mounting table 31, and during the mounting step, the heater 34 and the heater 35 are controlled so that the temperature of the head 32 and the 2 nd adhesive sheet 4b is always equal to the temperature of the surface of the circuit board 6 on which the semiconductor chip 1 is mounted. Thus, even if the circuit board 6, the head 32, and the 2 nd adhesive sheet 4b thermally expand in the mounting step, the relative positions of the portion of the 2 nd adhesive sheet 4b in contact with the semiconductor chip 1 and the portion of the circuit board 6 to which the bump of the semiconductor chip 1 is bonded are not easily changed, and high-precision mounting can be stably performed.
If only the head 32 has the heater 35 as shown in fig. 6 and a temperature difference occurs between the head 32 and the circuit board 6, or if there is a large difference in the thermal expansion coefficient among the head 32, the 2 nd adhesive sheet 4b, and the circuit board 6, the relative positions of the portion of the 2 nd adhesive sheet 4b that contacts the semiconductor chip 1 and the portion of the circuit board 6 to which the bump of the semiconductor chip 1 is bonded change depending on the difference in the dimensions after the thermal expansion.
Here, there is not little variation in the dimension of the semiconductor chip 1 in the Z-axis direction, and there is also variation in the frictional force generated between the 1 st surface of each semiconductor chip 1 and the 2 nd adhesive sheet 4 b. In this case, in the semiconductor chip 1 having a low friction ratio, even if the relative position between the surface of the adhesive sheet 4b in contact with the semiconductor chip 1 and the portion of the circuit board 6 where the bump of the semiconductor chip 1 is bonded is changed, the adhesive sheet 4b and the semiconductor chip 1 may slide, and then the thermal compression bonding may be performed without any problem, but in the semiconductor chip 1 having a high friction ratio, the friction is higher than the bonding force of the bump, and the semiconductor chip 1 is attached to the adhesive sheet 4b due to the change in the relative position, and the semiconductor chip 1 may be misaligned or peeled.
In contrast, the thermal expansion coefficients of the head 32, the adhesive sheet 4b, and the circuit board 6 are made equal or the same, and the semiconductor chip 1 can be prevented from being peeled off from the circuit board 6 by controlling the temperature so that the temperatures of the adhesive sheet 4b and the circuit board 6 are always equal during the mounting step.
By the above mounting method, the semiconductor chip can be mounted on the circuit board with high accuracy and stability.
Next, a mounting device of the present invention is shown in fig. 7.
The mounting apparatus 100 includes a laser transfer unit 10, an adhesive sheet placing unit 20, and a mounting unit 30, and performs a first transfer step and a second transfer step by the laser transfer unit 10, and performs a mounting step by the mounting unit 30. The 1 st adhesive sheet 4a and the 2 nd adhesive sheet 4b are temporarily placed on the adhesive sheet placement part 20, and if necessary, an adhesive force reducing step is performed on the adhesive sheet placement part 20. The substrates (the carrier substrate 2, the 1 st adhesive sheet 4a, the 2 nd adhesive sheet 4b, and the circuit board 6) between the respective apparatuses are transferred by one or more kinds of robot arms 40.
Fig. 8 shows details of the laser transfer section 10.
The laser transfer unit 10 has a vacuuming unit, not shown, and can be entirely a vacuum chamber to form a vacuum environment. The laser transfer unit 10 further includes: a transfer substrate holding unit 13 that can move in the X-axis direction and holds a transfer substrate; a transferred substrate holding unit 14 which is movable in the X-axis direction, the Y-axis direction, the Z-axis direction, and the θ direction, and which holds the transferred substrate so as to face the transferred substrate with a gap therebetween, below the transferred substrate holding unit 13; a laser irradiation unit 12 that irradiates the laser beam 11; and a control unit not shown.
The laser irradiation unit 12 is fixedly provided to the laser transfer unit 10. In the present embodiment, the laser irradiation section 12 irradiates the linear laser light 11 to simultaneously laser-delaminate the semiconductor chips 1 arranged in the Y-axis direction. A camera, not shown, is provided at a position close to the laser irradiation unit 12. The camera recognizes the position of the transfer substrate or the transferred substrate, and aligns the transferred substrate holding unit 14 by moving it in the X-axis, Y-axis, or θ -axis direction (the center direction in which the Z-axis direction is the center of rotation).
The transfer substrate holding unit 13 has an opening, and the laser beam 11 emitted from the laser beam irradiation unit 12 can be irradiated to the transfer substrate held by the transfer substrate holding unit 13 through the opening.
In this laser irradiation unit 10, the 1 st transfer step and the 2 nd transfer step are performed, and when the semiconductor chip 1 held by the transfer substrate (carrier substrate 2) and the substrate to be transferred (1 st adhesive sheet 4a) are transferred without a gap therebetween as in the 1 st transfer step, the substrate to be transferred holding unit 14 is moved in the Z-axis direction to bring the semiconductor chip 1 of the carrier substrate 2 held by the transfer substrate holding unit 13 into contact with the 1 st adhesive sheet 4a held by the substrate to be transferred holding unit 14. While moving the transfer substrate holding unit 13 and the transferred substrate holding unit 14 at the same speed in the X-axis direction, the laser beam 11 is intermittently irradiated from the laser irradiation unit 12 for a predetermined time, and the transfer from the carrier substrate 2 to the 1 st adhesive sheet 4a is completed.
Alternatively, the following method may be adopted: the 1 st adhesive sheet 4a to which the carrier substrate 2 is attached is held by the transferred substrate holding portion 14, and the laser beam 11 is intermittently irradiated from the laser irradiation portion 12 for a predetermined time while moving only the transferred substrate holding portion 14 in the X-axis direction.
In the present description, a member that plays a role of holding the 1 st adhesive sheet 4a in the 1 st transfer step, such as the transferred substrate holding portion 14, will be referred to as a 1 st adhesive sheet holding portion.
On the other hand, in the case where transfer is performed so that a gap is provided between the semiconductor chip 1 held by the transfer substrate (the 1 st adhesive sheet 4a) and the substrate to be transferred (the 2 nd adhesive sheet 4b) as in the 2 nd transfer step shown in fig. 3 (a) and (b), the transfer substrate holding portion 13 holding the 1 st adhesive sheet 4a can be moved in the X-axis direction, or the substrate to be transferred holding portion 14 holding the 2 nd adhesive sheet 4b can be moved in at least one of the X-axis direction, the Y-axis direction, and the θ -axis direction to perform alignment.
After the alignment, the transfer substrate holding unit 13 and the transfer substrate holding unit 14 are moved in the X-axis direction, and the laser beam 11 is intermittently irradiated from the laser irradiation unit 12 for a predetermined time, so that the semiconductor chip 1 bonded to the 1 st adhesive sheet 4a is peeled off, and is biased and transferred toward the 2 nd adhesive sheet 4b held by the transfer substrate holding unit 14. In this case, the vacuum chamber makes the inside of the laser transfer unit 10 a vacuum atmosphere, so that the semiconductor chip 1 to which a force is applied can be prevented from being displaced without being affected by air resistance.
Further, by changing the relative movement speed between the transfer substrate holding portion 13 and the transferred substrate holding portion 14, the interval between the semiconductor chips 1 landed on the 2 nd adhesive sheet 4b can be adjusted as described above.
In the present description, a member having a function of holding the 2 nd adhesive sheet 4b receiving the 1 st surface of the semiconductor chip 1, such as the transferred substrate holding portion 14, will be referred to as a 2 nd adhesive sheet holding portion. That is, in the present embodiment, the transferred substrate holding portion 14 doubles as the 1 st adhesive sheet holding portion and the 2 nd adhesive sheet holding portion.
In the present embodiment, the transferred substrate holding unit 14 is configured to be movable in the X-axis direction, the Y-axis direction, the Z-axis direction, and the θ direction, but the present invention is not limited to this, and may be appropriately modified according to circumstances. For example, if rotational alignment is not required, movement in the θ direction is not required, and if the interval between the transfer substrate and the transfer target substrate is not required to be changed, movement in the Z-axis direction is not required. Further, the transfer substrate holding unit 13 may be movable in the Y-axis direction.
Next, fig. 9 shows the adhesive sheet mounting portion 20 in detail.
The adhesive sheet mounting portion 20 includes a 1 st adhesive sheet mounting portion 21, a 2 nd adhesive sheet mounting portion 22, and a control portion not shown.
The upper surface of the 1 st adhesive sheet placement unit 21 can vacuum-adsorb the 1 st adhesive sheet 4a, and a groove portion into which the robot arm 40 can enter is provided, and the 1 st adhesive sheet 4a before the 1 st transfer step is performed and the 1 st adhesive sheet 4a before the 2 nd transfer step in which the semiconductor chip 1 is bonded by the laser transfer unit 10 are transported by the robot arm 40, and the adhesive film 3a is placed on the upper surface of the 1 st adhesive sheet placement unit 21 in an upward direction.
The upper surface of the 2 nd adhesive sheet placement part 22 is capable of vacuum-sucking the 2 nd adhesive sheet 4b, and is provided with a groove portion into which the robot arm 40 can enter, and the 2 nd adhesive sheet 4b before the 2 nd transfer step is performed and the 2 nd adhesive sheet 4b before the mounting step in which the semiconductor chip 1 is bonded by the laser transfer part 10 are transported by the robot arm 40, and the adhesive film 3b is placed on the upper surface of the 2 nd adhesive sheet placement part 22 in an upward direction.
In the present embodiment, the 1 st adhesive sheet placing section 21 has the heater 23, and the temperature of the upper surface of the 1 st adhesive sheet placing section 21 can be controlled. Then, in a state where the 1 st adhesive sheet 4a to which the semiconductor chip 1 is attached is placed on the upper surface of the 1 st adhesive sheet placing portion 21, the heater 23 is heated to reduce the adhesive force of the adhesive film 3a of the 1 st adhesive sheet 4 a. That is, the adhesion reducing step in the above mounting method is performed. In the present invention, the member that reduces the adhesion of the 1 st adhesive sheet 4a, such as the adhesive sheet placement unit 21 and the heater 23 of the present embodiment, is referred to as an adhesion reducing unit.
Next, fig. 10 shows the mounting portion 30 in detail.
The mounting unit 30 includes a mounting table 31, a head 32, and a dual field optical system 33, and includes a control unit not shown.
The mounting table 31 is configured to be capable of mounting the circuit substrate 6 thereon, and to hold the circuit substrate 6 by vacuum suction so as not to move, and to be capable of moving in the X, Y axis direction by the XY stage.
In the present embodiment, the mounting table 31 has the heater 34, and the control unit can control the temperature of the surface of the mounting table 31 (≈ the temperature of the circuit substrate 6 mounted on the mounting table 31). A thermometer, not shown, is provided on the mounting table 31, and the temperature of the mounting table 31 measured by the thermometer can be fed back and temperature controlled.
The head 32 has a substantially flat surface at its distal end portion and has one or more suction holes, and the head 32 sucks and holds the surface of the 2 nd adhesive sheet 4b on the side where the semiconductor chip 1 is not transferred in the mounting step. The head 32 is movable in the Z-axis direction, and the circuit board 6 held by the mounting table 31 is brought into contact with the bumps of the semiconductor chip 1 transferred to the 2 nd adhesive sheet 4b held by the head 32, and pressurized. The head 32 has a heater 35, and the temperature of the head 32, particularly the tip portion, can be controlled by the control unit. A thermometer, not shown, is provided on the head 32, and the temperature of the head 32 measured by the thermometer can be fed back and temperature controlled.
The head 32 is configured to be movable in the θ direction (the center direction about the Z-axis direction as the center of rotation), and the semiconductor chip 1 can be mounted at a predetermined position on the circuit board 6 by thermocompression bonding by linking the movement of the stage 31 in the X, Y-axis direction with the movement of the head 32 in the Z-axis and θ directions.
Here, in the present embodiment, the heater 34 and the heater 35 are simultaneously controlled, and the temperature of the surface of the mounting table 31 and the temperature of the leading end portion of the head 32 (≈ temperature of the second adhesive sheet 4b) are always equal to each other in the mounting step. As described above, even if the circuit board 6 and the 2 nd adhesive sheet 4b thermally expand in the mounting step, the relative positions of the portion of the 2 nd adhesive sheet 4b in contact with the semiconductor chip 1 and the portion of the circuit board 6 where the bump of the semiconductor chip 1 is bonded are not easily changed, and high-precision mounting can be stably performed.
In the present embodiment, the head 32 is configured to move in the Z-axis direction and the θ -axis direction, and the stage 31 is configured to move in the X, Y-axis direction. For example, the head 32 may be moved in the X-axis, Y-axis, and θ directions, and the stage 31 may be moved in the Z-axis direction. Further, the moving mechanism in the θ direction may be omitted. For example, when the positions of the semiconductor chip 1 and the circuit board 6 are not rotationally offset, the movement mechanism in the θ direction may be omitted.
When the circuit board 6 is mounted on the mounting table 31, the dual field optical system 33 can enter between the head 32 and the circuit board 6 to capture both images. The control unit performs image processing on the captured images to recognize the respective positional shifts. Then, the control unit controls the semiconductor chips 1 so as to be brought into contact with and joined to predetermined positions on the circuit board 6 in consideration of the positional deviation, thereby accurately mounting the semiconductor chips 1 in the X, Y axial direction.
The mounting method of the present invention can be performed by the mounting apparatus 100 described above.
By the above mounting method and mounting apparatus, the semiconductor chip can be mounted on the circuit board with high accuracy and stability.
Here, the mounting method and the mounting apparatus of the present invention are not limited to the above-described embodiments, and may be other embodiments within the scope of the present invention. For example, in the above description, the 1 st transfer step and the 3 rd transfer step are performed in a vacuum atmosphere, but may be performed in the atmosphere.
Description of the reference symbols
1: a semiconductor chip; 2: a carrier substrate; 3 a: an adhesive film; 3 b: an adhesive film; 4 a: 1, a first adhesive sheet; 4 b: a 2 nd adhesive sheet; 5: a transfer layer; 6: a circuit substrate; 10: a laser transfer section; 11: laser; 12: a laser irradiation unit; 13: a transfer substrate holding section; 14: a transferred substrate holding section; 20: an adhesive sheet mounting part; 21: 1 st adhesive sheet placing part; 22: a 2 nd adhesive sheet mounting part; 23: a heater; 30: an installation part; 31: a mounting table; 32: a head; 33: a dual-field optical system; 34: a heater; 35: a heater; 40: a robot arm; 100: and (5) installing the device.
Claims (6)
1. A mounting method for mounting a semiconductor chip after dicing, the semiconductor chip having a 1 st surface held on a carrier substrate, on a circuit board,
the mounting method sequentially executes the following steps:
a 1 st transfer step of preparing a 1 st adhesive sheet on a 2 nd surface side of the semiconductor chip, the 2 nd surface being a surface opposite to the 1 st surface, and transferring the semiconductor chip to the 1 st adhesive sheet by irradiating the 1 st surface of the semiconductor chip with laser light through the carrier substrate so that the semiconductor chip is peeled off from the carrier substrate and attached to the 1 st adhesive sheet;
a 2 nd transfer step of preparing a 2 nd adhesive sheet on the 1 st surface side of the semiconductor chip, and transferring the semiconductor chip to the 2 nd adhesive sheet so that the semiconductor chip is peeled off from the 1 st adhesive sheet and attached to the 2 nd adhesive sheet by irradiating the 2 nd surface of the semiconductor chip with laser light through the 1 st adhesive sheet; and
and a mounting step of holding the surface of the 2 nd adhesive sheet, on which the semiconductor chip is not transferred, by a head, and thermally pressing the semiconductor chip and the circuit board via the head to mount the semiconductor chip on the circuit board.
2. The installation method according to claim 1,
the mounting method includes an adhesion reducing step of reducing the adhesion of the 1 st adhesive sheet between the 1 st transfer step and the 2 nd transfer step.
3. The installation method according to claim 2,
the adhesive strength reducing step reduces the adhesive strength by heating the 1 st adhesive sheet and the semiconductor chip.
4. The mounting method according to any one of claims 1 to 3,
the thermal expansion coefficient of the surface of the head in contact with the 2 nd adhesive sheet, the material of the 2 nd adhesive sheet, and the thermal expansion coefficient of the surface of the circuit board on which the semiconductor chip is mounted are the same, and in the mounting step, the temperature of the 2 nd adhesive sheet and the temperature of the surface of the circuit board on which the semiconductor chip is transferred are always controlled to be equal to each other.
5. The installation method according to claim 4,
the material of the surface of the head in contact with the 2 nd adhesive sheet, the material of the 2 nd adhesive sheet, and the material of the surface of the circuit board on which the semiconductor chip is mounted are the same.
6. A mounting apparatus for mounting a semiconductor chip after dicing, the semiconductor chip being held on a carrier substrate as a 1 st surface, on a circuit board mounted on a mounting table,
the mounting device has:
a 1 st adhesive sheet holding portion for holding a 1 st adhesive sheet to which a 2 nd surface of the semiconductor chip is to be bonded, the 2 nd surface being a surface opposite to the 1 st surface;
a 2 nd adhesive sheet holding portion for holding a 2 nd adhesive sheet, the 2 nd adhesive sheet receiving the 1 st surface of the semiconductor chip;
a laser irradiation unit that irradiates laser light; and
and a head for holding the 2 nd adhesive sheet holding the semiconductor chip and capable of pressing and heating the semiconductor chip against the circuit board placed on the placing table.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017-246966 | 2017-12-22 | ||
| JP2017246966A JP6990577B2 (en) | 2017-12-22 | 2017-12-22 | Mounting method and mounting device |
| PCT/JP2018/042178 WO2019123901A1 (en) | 2017-12-22 | 2018-11-14 | Mounting method and mounting device |
Publications (2)
| Publication Number | Publication Date |
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| CN111512423A true CN111512423A (en) | 2020-08-07 |
| CN111512423B CN111512423B (en) | 2023-05-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201880082929.XA Active CN111512423B (en) | 2017-12-22 | 2018-11-14 | Mounting method and mounting device |
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| Country | Link |
|---|---|
| JP (1) | JP6990577B2 (en) |
| KR (1) | KR102614211B1 (en) |
| CN (1) | CN111512423B (en) |
| WO (1) | WO2019123901A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117497432A (en) * | 2023-01-27 | 2024-02-02 | 苏州正齐半导体设备有限公司 | Bonding tool of flip chip laser bonding equipment |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115443525A (en) * | 2019-12-17 | 2022-12-06 | 库力索法荷兰有限公司 | Adhesive tape for receiving discrete components |
| WO2022209079A1 (en) * | 2021-03-30 | 2022-10-06 | 東レエンジニアリング株式会社 | Transferee substrate and transfer device |
| WO2023062671A1 (en) * | 2021-10-11 | 2023-04-20 | 株式会社レゾナック | Electronic component device manufacturing method, electronic component mounting method, and buffer sheet |
| CN115295451A (en) * | 2022-08-15 | 2022-11-04 | 武汉新芯集成电路制造有限公司 | Bonding apparatus and bonding method |
| KR20240141921A (en) * | 2023-03-21 | 2024-09-30 | 주식회사 렉스피 | Device for transferring and bonding micro LED, and Operating method thereof |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN111512423B (en) | 2023-05-12 |
| JP6990577B2 (en) | 2022-01-12 |
| KR20200097278A (en) | 2020-08-18 |
| KR102614211B1 (en) | 2023-12-14 |
| JP2019114660A (en) | 2019-07-11 |
| WO2019123901A1 (en) | 2019-06-27 |
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