CN111510136B - Annular voltage-controlled oscillator with temperature compensation - Google Patents
Annular voltage-controlled oscillator with temperature compensation Download PDFInfo
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- CN111510136B CN111510136B CN202010434710.0A CN202010434710A CN111510136B CN 111510136 B CN111510136 B CN 111510136B CN 202010434710 A CN202010434710 A CN 202010434710A CN 111510136 B CN111510136 B CN 111510136B
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- 239000003990 capacitor Substances 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 230000006978 adaptation Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/099—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
- H03L7/0995—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop the oscillator comprising a ring oscillator
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The invention provides a ring voltage-controlled oscillator with a temperature compensation function, which consists of a PTAT voltage generating circuit, a proportional amplifier circuit, a variable capacitance unit and a ring voltage-controlled oscillator. The PTAT voltage generating circuit generates voltage in positive relation with temperature, the proportional amplifier circuit amplifies the voltage generated by the PTAT voltage generating circuit to a power supply voltage range, the variable capacitance unit is connected to the output end of the annular voltage-controlled oscillator, and the capacitance value of the variable capacitance unit is changed by tuning the variable capacitance unit by utilizing the voltage output by the proportional amplifier circuit, so that the frequency change of the annular voltage-controlled oscillator caused by temperature change is compensated. The invention does not need to use a current source as a tail current to carry out temperature compensation on the output frequency of the oscillator, thereby avoiding the influence of current source noise up-conversion on the phase noise of the oscillator and avoiding the influence of phase noise of a clock signal due to the reduction of the swing of an output signal caused by the existence of the tail current source in the delay unit of the annular voltage-controlled oscillator.
Description
Technical Field
The invention relates to the field of ring voltage-controlled oscillators, in particular to a ring voltage-controlled oscillator with temperature compensation.
Background
Ring voltage controlled oscillators are widely used in circuitry such as phase locked loops. The output frequency range of a ring voltage controlled oscillator is typically composed of a plurality of tuning subbands together. When the circuit systems such as the phase-locked loop and the like work stably, the annular voltage-controlled oscillator is locked at a certain frequency point of the optimal sub-band. However, when the temperature of the chip changes, the output frequency of the ring voltage controlled oscillator also changes under the same control voltage, so that the stabilized circuit systems such as the phase-locked loop are unstable again, even the target frequency does not exist on the optimal sub-band, and the circuit systems such as the phase-locked loop are unlocked.
The output frequency of the annular voltage-controlled oscillation can be reduced by the influence of temperature change by utilizing a tail current source which is irrelevant to temperature. However, from the angle analysis of phase noise, the low-frequency noise of the tail current source in the delay unit of the annular voltage-controlled oscillator is up-converted to the vicinity of the carrier wave, so that the phase noise performance of the annular voltage-controlled oscillator is affected, and meanwhile, the amplitude of an output signal of the oscillator is reduced by the tail current source in the delay unit of the voltage-controlled oscillator, so that the phase noise performance of the annular voltage-controlled oscillator is further deteriorated. It is therefore of great research importance to design a ring voltage controlled oscillator that does not require a current source.
Disclosure of Invention
Technical problems:
in order to reduce the influence of temperature variation on the output frequency of the annular voltage-controlled oscillator and avoid the phase noise degradation caused by temperature compensation on the output frequency of the annular voltage-controlled oscillator by using a tail current source, the invention provides a novel annular voltage-controlled oscillator with temperature compensation.
The technical scheme is as follows:
the technical scheme adopted by the invention is as follows:
a ring voltage controlled oscillator with temperature compensation includes a PTAT voltage generation circuit, a proportional amplifier circuit, a variable capacitance unit, and a ring voltage controlled oscillator; the PTAT voltage generating circuit generates a voltage in a positive relation with temperature, the proportional amplifier circuit amplifies the voltage generated by the PTAT voltage generating circuit and then loads the amplified voltage to the variable capacitance unit to adjust the capacitance of the variable capacitance unit, and the variable capacitance unit connected in parallel with the annular voltage-controlled oscillator is used as a load of the annular voltage-controlled oscillator, so that output frequency change of the annular voltage-controlled oscillator caused by temperature change is reduced.
Further, the PTAT voltage generating circuit is composed of a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a first amplifier, a first resistor, a second resistor, a fifth resistor, a first triode and a second triode; the proportional amplifier circuit is composed of a third resistor, a fourth resistor, a sixth resistor, a seventh resistor, an eighth resistor, a constant value capacitor and a second amplifier; the source electrode of the fourth transistor is connected with the power supply node, the grid electrode of the fourth transistor is connected with the drain electrode, one end of the fifth resistor is connected with the grid electrode of the fourth transistor and the grid electrode of the fifth transistor respectively, the other end of the fifth resistor is connected with the ground node, the drain electrode of the fifth transistor is connected with the ground node, the source electrode of the first transistor is connected with the power supply node, the grid electrode of the first transistor is connected with the output end of the first amplifier, the drain electrode of the first transistor is connected with the non-inverting input end of the first amplifier, the grid electrode of the second transistor is connected with the grid electrode of the first transistor, the source electrode of the second transistor is connected with the power supply node, the drain electrode of the second transistor is connected with the inverting input end of the first amplifier respectively, the emitter electrode of the first transistor is connected with the non-inverting input end of the first amplifier, the base electrode of the first transistor is connected with the ground node, the other end of the second transistor is connected with the drain electrode of the third transistor, the non-inverting input end of the third transistor is connected with the drain electrode of the fourth transistor respectively, the drain electrode of the third transistor is connected with the non-inverting input end of the third transistor is connected with the third transistor, the other end of the sixth resistor is respectively connected with the inverting input end of the second amplifier and one end of the seventh resistor, the other end of the seventh resistor is respectively connected with the output end of the second amplifier and one end of the eighth resistor, the other end of the eighth resistor is respectively connected with one end of the constant value capacitor and the input end of the variable capacitance unit, the other end of the constant value capacitor is connected with the ground node, and the output end of the variable capacitance unit is connected with the output end of the annular voltage-controlled oscillator.
Further, the first to fifth transistors are PMOS transistors, the first transistor and the second transistor are PNP transistors, and the first amplifier and the second amplifier are high gain amplifiers.
The beneficial effects are that:
the invention uses the PTAT voltage generating circuit and the proportional amplifier circuit to generate a voltage signal which changes along with the temperature, and uses the voltage signal to tune the capacitance value of the variable capacitance unit, thereby reducing the influence of the temperature on the output frequency of the annular voltage-controlled oscillator.
When the ring voltage-controlled oscillator with temperature compensation provided by the invention is applied to the circuit systems such as the phase-locked loop, the influence of temperature change on the circuit systems such as the phase-locked loop can be reduced, and the stability of the circuit systems such as the phase-locked loop is enhanced.
The temperature compensation circuit provided by the invention does not use a tail current source, is favorable for optimizing the phase noise performance of the annular voltage-controlled oscillator, and avoids the phase noise deterioration caused by temperature compensation of the output frequency of the annular voltage-controlled oscillator by using the tail current source.
Drawings
FIG. 1 is a diagram of a ring voltage controlled oscillator circuit with temperature compensation according to the present invention;
fig. 2 is a graph comparing output frequency curves of the ring voltage controlled oscillator with temperature compensation and the ring voltage controlled oscillator without temperature compensation according to the present invention.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
Fig. 1 shows a ring voltage controlled oscillator with temperature compensation provided by the invention, wherein the source electrode of the M4 transistor is connected with a power supply node VCC, the grid electrode and the drain electrode of the M4 transistor are connected, the resistor R5 is connected with the grid electrode of the M4 transistor and the ground node GND, the grid electrode of the M5 transistor is connected with the grid electrode of the M1 transistor, the source electrode of the M1 transistor is connected with the power supply node VCC, the grid electrode of the M1 transistor is connected with the output end of the amplifier Amp1, the drain electrode of the M1 transistor is connected with the non-inverting input end of the amplifier Amp1, the grid electrode of the M2 transistor is connected with the grid electrode of the M1 transistor, the source electrode of the M2 transistor is connected with the power supply node VCC, the drain electrode of the M2 transistor is connected with the inverting input end of the amplifier Amp1, the emitter of the P1 transistor is connected with the non-inverting input end of the amplifier Amp1, the base of the P1 triode is connected with the ground node GND, the collector of the P1 triode is connected with the ground node GND, the resistor R1 is connected with the inverting input end of the amplifier Amp1 and the emitter of the P2 triode, the base of the P2 triode is connected with the ground node GND, the collector of the P2 triode is connected with the ground node GND, the source of the M3 transistor is connected with the power supply node VCC, the grid of the M3 transistor is connected with the grid of the M2 transistor, the resistor R2 is connected with the ground node GND and the drain of the M3 transistor, the resistor R3 is connected with the drain of the M3 transistor and the non-inverting input end of the amplifier Amp2, the resistor R4 is connected with the non-inverting input end of the amplifier Amp2 and the ground node GND, the resistor R6 is connected with the inverting input end of the input voltage port Vb and the inverting input end of the amplifier Amp2, the resistor R7 is connected with the inverting input end of the amplifier Amp2 and the output end of the variable cell, the constant value capacitor C1 is connected with the input end of the variable capacitance unit and the ground node GND, and the variable capacitance unit is connected with the output end of the annular voltage-controlled oscillator as a load.
The transistors M1 and M2 and M3 and M4 and M5 are PMOS transistors, the transistors P1 and P2 are PNP transistors, and the amplifier Amp1 and Amp2 are high gain amplifiers.
Fig. 2 is a graph comparing output frequency curves of the ring voltage controlled oscillator with temperature compensation and the ring voltage controlled oscillator without temperature compensation according to the present invention, wherein the lower curve corresponds to the ring voltage controlled oscillator with temperature compensation according to the present invention, and the upper curve corresponds to the ring voltage controlled oscillator without temperature compensation. As can be seen from fig. 2, the ring voltage controlled oscillator with temperature compensation provided by the present invention greatly reduces the influence of temperature variation on the output frequency.
The invention, in part, is not disclosed in detail and is well known in the art.
It will be apparent to those skilled in the art that various modifications and adaptations can be made without departing from the principles of the present invention, and such modifications and adaptations are intended to be comprehended within the scope of the invention.
Claims (2)
1. A ring voltage controlled oscillator with temperature compensation, characterized by: the annular voltage-controlled oscillator with temperature compensation comprises a PTAT voltage generating circuit, a proportional amplifier circuit, a variable capacitance unit and an annular voltage-controlled oscillator; the PTAT voltage generating circuit generates a voltage in a positive relation with temperature, the proportional amplifier circuit amplifies the voltage generated by the PTAT voltage generating circuit and then loads the amplified voltage to the variable capacitance unit to adjust the capacitance of the variable capacitance unit, and the variable capacitance unit connected in parallel with the annular voltage-controlled oscillator is used as a load of the annular voltage-controlled oscillator, so that the output frequency change of the annular voltage-controlled oscillator caused by temperature change is reduced;
the PTAT voltage generating circuit is composed of a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a first amplifier, a first resistor, a second resistor, a fifth resistor, a first triode and a second triode; the proportional amplifier circuit is composed of a third resistor, a fourth resistor, a sixth resistor, a seventh resistor, an eighth resistor, a constant value capacitor and a second amplifier; the source electrode of the fourth transistor is connected with the power supply node, the grid electrode of the fourth transistor is connected with the drain electrode, one end of the fifth resistor is connected with the grid electrode of the fourth transistor and the grid electrode of the fifth transistor respectively, the other end of the fifth resistor is connected with the ground node, the drain electrode of the fifth transistor is connected with the ground node, the source electrode of the first transistor is connected with the power supply node, the grid electrode of the first transistor is connected with the output end of the first amplifier, the drain electrode of the first transistor is connected with the non-inverting input end of the first amplifier, the grid electrode of the second transistor is connected with the grid electrode of the first transistor, the source electrode of the second transistor is connected with the power supply node, the drain electrode of the second transistor is connected with the inverting input end of the first amplifier respectively, the emitter electrode of the first transistor is connected with the non-inverting input end of the first amplifier, the base electrode of the first transistor is connected with the ground node, the other end of the second transistor is connected with the drain electrode of the third transistor, the non-inverting input end of the third transistor is connected with the drain electrode of the fourth transistor respectively, the drain electrode of the third transistor is connected with the non-inverting input end of the third transistor is connected with the third transistor, the other end of the sixth resistor is respectively connected with the inverting input end of the second amplifier and one end of the seventh resistor, the other end of the seventh resistor is respectively connected with the output end of the second amplifier and one end of the eighth resistor, the other end of the eighth resistor is respectively connected with one end of the constant value capacitor and the input end of the variable capacitance unit, the other end of the constant value capacitor is connected with the ground node, and the output end of the variable capacitance unit is connected with the output end of the annular voltage-controlled oscillator.
2. The ring voltage controlled oscillator with temperature compensation of claim 1, wherein: the first transistor, the second transistor and the third transistor are PMOS transistors, and the first triode and the second triode are PNP triodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010434710.0A CN111510136B (en) | 2020-05-21 | 2020-05-21 | Annular voltage-controlled oscillator with temperature compensation |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010434710.0A CN111510136B (en) | 2020-05-21 | 2020-05-21 | Annular voltage-controlled oscillator with temperature compensation |
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| Publication Number | Publication Date |
|---|---|
| CN111510136A CN111510136A (en) | 2020-08-07 |
| CN111510136B true CN111510136B (en) | 2023-05-16 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104503530A (en) * | 2015-01-09 | 2015-04-08 | 中国科学技术大学 | High-performance high-reliability reference voltage source of low-voltage complementary metal oxide semiconductor (CMOS) |
| CN109150173A (en) * | 2018-02-26 | 2019-01-04 | 上海安路信息科技有限公司 | reference clock frequency generator |
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2020
- 2020-05-21 CN CN202010434710.0A patent/CN111510136B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104503530A (en) * | 2015-01-09 | 2015-04-08 | 中国科学技术大学 | High-performance high-reliability reference voltage source of low-voltage complementary metal oxide semiconductor (CMOS) |
| CN109150173A (en) * | 2018-02-26 | 2019-01-04 | 上海安路信息科技有限公司 | reference clock frequency generator |
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| CN111510136A (en) | 2020-08-07 |
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