CN111509083B - 一种基于GaN/rGO异质结的柔性光电传感器及其制备方法 - Google Patents
一种基于GaN/rGO异质结的柔性光电传感器及其制备方法 Download PDFInfo
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Abstract
本发明提出了一种基于GaN/rGO异质结的柔性光电传感器，其包括正方形柔性衬底，粘合层，GaN层，rGO层，沿四条边的四个条形电极。本发明利用GaN/rGO异质结的内建电场，分离光斑照射产生的电子‑空穴对，并在器件表面电阻层rGO产生横向光电响应，该响应与入射光斑的位置、光强及器件的弯曲程度或压电效应相关，可实现一个器件多种用途。区别于传统的硅基光电传感器，该发明可根据需求，测量三种物理量，即光斑位置、光强和外部力学刺激。
Description
技术领域
本发明涉及半导体光电器件领域，提出了一种基于GaN/rGO异质结的柔性光电传感器及其制备方法。
背景技术
光电传感器是一种将光信号转变为电信号的电子器件。根据工作原理，大致上可分为外光电效应、内光电效应及光伏效应，其中，大部分的半导体光电器件都基于内光电效应，目前已广泛应用于军事、民生与工作等领域，如照像机、复印机、扫描仪、色度计、汽车和医疗仪器等等。当前代表性的光电器件目前主要有光电倍增管、光敏电阻、光敏二极管、光敏三极管和光电池等。这些器件不但有可以用来检测光强、光照度等直接测量值的，有的还可以检测位移、速度、大小等间接测量值，甚至还可用来进行准直与测距，对当前的工业自动化、机器人、消费电子、汽车等应用领域有着举足轻重的作用。
目前大多数的光电传感器功能单一，只能表征测量一个物理量，其中代表性的是硅光电二极管和InGaAs红外光电二极管，它们可以测量光强或光功率。光电位置传感器则是另一种光电探测器，主要用来测试光斑的位移，由于光电响应与光斑的位置呈线性关系，可由光电响应测得光斑的具体位置，由于其驱动电路简单，精度高，已在桥梁的振动监控、原子力显微镜的悬臂监测等领域得到了应用。
随着时代和科学的发展，人们对光电传感器的需求及功能也越来越有更多的要求，如多用途，即一个器件可以测量多个物理量，并能同时测量这些物理量；具备柔性可穿戴特征，可以满足便携式可弯曲的应用场景；等等。而以硅光电二极管为代表的商用器件均不能满足上述要求，同时，其制备工艺复杂，成本较高。
发明内容
针对现有技术中存在的表征测量量单一的问题，通过本发明提供的一种基于GaN/rGO异质结的柔性光电传感器及其制备方法，能够较好地解决这一问题。
根据本发明的一个方面，
一种基于GaN/rGO异质结的柔性光电传感器的制备方法，包括：
S01：取硅衬底进行清洗，用高压氮气吹干，在所述硅衬底上外延生长GaN层(1)；
S02：取氧化石墨烯溶液滴在纤维滤膜上，用真空泵抽滤纤维滤膜，待其干燥后倒置压在所述GaN层(1)上，取另一硅片压在吸收有所述氧化石墨烯溶液的所述纤维滤膜上，待其固化后采用溶液溶解所述纤维滤膜后获得氧化石墨烯层；
S03：在氮气或真空环境下对所述氧化石墨烯层加热，使氧化石墨烯层部分还原；在部分还原的所述氧化石墨烯层(2)的上表面的多条边上镀上多条Cr/Au电极(3)；
S04：在部分还原的rGO层(2)上表面和所述Cr/Au电极(3)上表面旋涂上保护层(4)，在高温环境下加热后，保护层(4)上表面通过石腊与石英片或蓝宝石片接触，置于热平台上键合，使石英片或蓝宝石片作为GaN层(1)、部分还原的rGO层(2)、Cr/Au电极(3)、保护层(4)四级层级结构的临时衬底；
S05：将所述GaN层(1)下方的硅衬底刻蚀除去，所述GaN层(1)的下表面利用粘合层(5)固定在柔性衬底(6)上；将其放在加热台上，在加热环境下将所述石腊和所述临时衬底移去。
进一步的，所述硅衬底的清洗方式为：用丙酮、异丙醇、去离子水依次清洗2次以上。
进一步的，部分还原的rGO层(2)的厚度通过所述氧化石墨烯溶液滴的滴入量进行控制。
进一步的，所述步骤S02中的所述纤维滤膜为0.22μm的纤维滤膜；所述另一硅片压在吸收有所述氧化石墨烯溶液的所述纤维滤膜上的时间大于10小时；所述溶液是丙酮。
进一步的，所述使氧化石墨烯层部分还原，其碳氧比为1.6-2.8：1。
进一步的，所述保护层(4)为PMMA材质；所述高温环境为180℃加热3分钟。
一种由上述方法制备的基于GaN/rGO异质结的柔性光电传感器，所述传感器包括：GaN层(1)，部分还原的rGO层(2)，Cr/Au电极(3)，保护层(4)，粘合层(5)，柔性衬底(6)。
进一步的，所述GaN层(1)为矩形，其厚度为0.2-2.0μm。
进一步的，所述Cr/Au电极(3)的厚度为50-200nm。
进一步的，所述粘合层(5)为紫外固化胶，所述柔性衬底(6)为PET或PI。
本发明的有益效果：
本发明通过正方形柔性衬底，粘合层，GaN层，rGO层和沿正方形柔性衬底四条边的四个条形电极，形成了GaN/rGO异质结的内建电场，分离光斑照射产生的电子-空穴对，并在器件表面电阻层rGO产生横向光电响应，该响应与入射光斑的位置、光强及器件的弯曲程度或压电效应相关，可实现一个器件多种用途。通过本发明的器件，可以实现三种物理量的测量，即光斑位置、光强和外部力学刺激。
附图说明
图1示出的是本发明的一种基于GaN/rGO异质结的柔性光电传感器器件结构示意图；
图2示出的是本发明的一种基于GaN/rGO异质结的柔性光电传感器器件俯视图；
附图标记说明：GaN层1，部分还原的rGO层2，Cr/Au电极3，保护层4，粘合层5，柔性衬底6，光束7。
具体实施方式
现在将参照若干示例性实施例来论述本发明的内容。应当理解，论述了这些实施例仅是为了使得本领域普通技术人员能够更好地理解且因此实现本发明的内容，而不是暗示对本发明的范围的任何限制。
如本文中所使用的，术语“包括”及其变体要被解读为意味着“包括但不限于”的开放式术语。术语“基于”要被解读为“至少部分地基于”。术语“一个实施例”和“一种实施例”要被解读为“至少一个实施例”。术语“另一个实施例”要被解读为“至少一个其他实施例”。如图1和图2所示，本发明提供了一种基于GaN/rGO异质结的柔性光电传感器及其制备方法。图1示出的是基于GaN/rGO异质结的柔性光电传感器的层级结构示意图，其中包括：GaN层1，部分还原的rGO层2，Cr/Au电极3，保护层4，粘合层5，柔性衬底6，光束7。图2示出的是基于GaN/rGO异质结的柔性光电传感器的俯视图，其中主要包括Cr/Au电极3和保护层4的布置位置。根据本发明的一个实施例，一种基于GaN/rGO异质结的柔性光电传感器的制备方法包括：
步骤1：首先将硅衬底用常规步骤进行清洗，即用丙酮、异丙醇、去离子水依次清洗2次以上，然后用高压氮气吹干。利用MOCVD在衬底上外延生长GaN层1，形状为矩形或四边形，在本实施例中优选地为正方形，其大小为10mm×10mm。该GaN层(1)的厚度范围为0.2-2.0μm，在本实施例中优选厚度为1.5μm。
步骤2：取氧化石墨烯溶液，即GO溶液滴在0.22μm的纤维滤膜上，然后用真空泵抽滤纤维滤膜，待其干燥后倒置压在GaN层1上，使另一硅片将包括GO溶液的纤维滤膜与GaN层1压住10个小时。待压制过程结束之后，利用丙酮将已经固体化的GO溶液与纤维滤膜混合物中的纤维素膜溶解，获得rGO层，其厚度可通过调整GO溶液的浓度改变。
步骤3：接着把压制有rGO层的GaN层1在氮气或真空环境下加热，使rGO层部分还原，其碳氧比为1.6-2.8：1。在本实施例中，优选地碳氧比为2:1。然后利用掩膜板，采用热蒸发或电子束在部分还原的rGO层2上镀上Cr/Au电极3。Cr/Au电极3的数量为四条，其宽度为1mm并沿着部分还原的rGO层2四条边分布。Cr/Au电极3的电极厚度范围为50-200nm，在本实施例中优选厚度为100nm。
步骤4：在部分还原的rGO层2上表面以及设置在部分还原的rGO层2上的Cr/Au电极3上表面旋涂上PMMA层作为保护层4，然后在180℃加热环境下加热3分钟，接着在保护层4使用石腊作为粘合剂与石英片或蓝宝石片接触，置于85℃热平台上键合，使石英片或蓝宝石片作为GaN层1、部分还原的rGO层2、Cr/Au电极3、保护层4等四层级结构的临时衬底。
步骤5：利用机械减薄和干法刻蚀法将步骤1中的设置在GaN层1下表面的硅衬底除去，此时将GaN层1下表面利用粘合层5固定在柔性衬底6上。在本实施例中，粘合层5采用的材料是紫外固化胶，柔性衬底6采用的材料是PET或PI，本实施例中优选地为PET。待GaN层1通过粘合层5设置在柔性衬底6上后，将器件整体放在加热台上，在85℃下将保护层4上表面的石腊和临时衬底移去。
当入射光斑7照射到器件表面某处时，此处的光生电子空穴对GaN/rGO异质结处内建场作用下分离，并在垂直方向上分别往GaN层1和部分还原的rGO层2运动。在水平方向上，由于非平衡载流子的产生，使得该处载流子过多并往四周扩散，四侧的Cr/Au电极3集到的电流与光斑位置有直接的关系。通过公式x＝(I1-I2)/(I1+I2)，y＝(I3-I4)/(I3+I4)，就可以得到光斑的位移信息，实现位置传感器的功能。其中，I1、I2分别代表第一方向上的两个对立面的电流值，I3、I4分别代表第二方向上的两个对立面的电流值。当两侧电极加上偏压后，通过测量光电流，还可实现对光功率的测量。另一方面，当受到外力使器件弯曲时，由于GaN层1极化的改变，使得异质结处内建场也发生变化，从而使光电响应与弯曲形变程度也产生联系，从而实现器件的第三种功能，即压力或形变的测试。
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型，本发明的范围由所附权利要求及其等同物限定。
Claims (10)
1.一种基于GaN/rGO异质结的柔性光电传感器的制备方法，其特征在于，包括：
S01：取硅衬底进行清洗，用高压氮气吹干，在所述硅衬底上外延生长GaN层(1)；
S02：取氧化石墨烯溶液滴在纤维滤膜上，用真空泵抽滤纤维滤膜，待其干燥后倒置压在所述GaN层(1)上，取另一硅片压在吸收有所述氧化石墨烯溶液的所述纤维滤膜上，待其固化后采用溶液溶解所述纤维滤膜后获得氧化石墨烯层；
S03：在氮气或真空环境下对所述氧化石墨烯层加热，使氧化石墨烯层部分还原；在部分还原的所述氧化石墨烯层(2)的上表面的多条边上镀上多条Cr/Au电极(3)；
S04：在部分还原的rGO层(2)上表面和所述Cr/Au电极(3)上表面旋涂上保护层(4)，在高温环境下加热后，保护层(4)上表面通过石腊与石英片或蓝宝石片接触，置于热平台上键合，使石英片或蓝宝石片作为GaN层(1)、部分还原的rGO层(2)、Cr/Au电极(3)、保护层(4)四级层级结构的临时衬底；
S05：将所述GaN层(1)下方的硅衬底刻蚀除去，所述GaN层(1)的下表面利用粘合层(5)固定在柔性衬底(6)上；将其放在加热台上，在加热环境下将所述石腊和所述临时衬底移去。
2.根据权利要求1所述的基于GaN/rGO异质结的柔性光电传感器的制备方法，其特征在于，所述硅衬底的清洗方式为：用丙酮、异丙醇、去离子水依次清洗2次以上。
3.根据权利要求1所述的基于GaN/rGO异质结的柔性光电传感器的制备方法，其特征在于，部分还原的rGO层(2)的厚度通过所述氧化石墨烯溶液滴的滴入量进行控制。
4.根据权利要求1所述的基于GaN/rGO异质结的柔性光电传感器的制备方法，其特征在于，所述步骤S02中的所述纤维滤膜为0.22μm的纤维滤膜；所述另一硅片压在吸收有所述氧化石墨烯溶液的所述纤维滤膜上的时间大于10小时；所述溶液是丙酮。
5.根据权利要求1所述的基于GaN/rGO异质结的柔性光电传感器的制备方法，其特征在于，所述使氧化石墨烯层部分还原，其碳氧比为1.6-2.8：1。
6.根据权利要求1所述的基于GaN/rGO异质结的柔性光电传感器的制备方法，其特征在于，所述保护层(4)为PMMA材质；所述高温环境为180℃加热3分钟。
7.一种由权利要求1至6任一项的方法制备的基于GaN/rGO异质结的柔性光电传感器，其特征在于，所述传感器包括：GaN层(1)，部分还原的rGO层(2)，Cr/Au电极(3)，保护层(4)，粘合层(5)，柔性衬底(6)。
8.根据权利要求7所述的柔性光电传感器，其特征在于，所述GaN层(1)为矩形，其厚度为0.2-2.0μm。
9.根据权利要求7所述的柔性光电传感器，其特征在于，所述Cr/Au电极(3)的厚度为50-200nm。
10.根据权利要求7所述的柔性光电传感器，其特征在于，所述粘合层(5)为紫外固化胶，所述柔性衬底(6)为PET或PI。
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