CN111508945A - Power module - Google Patents
Power module Download PDFInfo
- Publication number
- CN111508945A CN111508945A CN202010454036.2A CN202010454036A CN111508945A CN 111508945 A CN111508945 A CN 111508945A CN 202010454036 A CN202010454036 A CN 202010454036A CN 111508945 A CN111508945 A CN 111508945A
- Authority
- CN
- China
- Prior art keywords
- gallium nitride
- power device
- copper
- circuit board
- nitride power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 100
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 96
- 239000000919 ceramic Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000004806 packaging method and process Methods 0.000 claims abstract description 25
- 239000004033 plastic Substances 0.000 claims abstract description 21
- 229920003023 plastic Polymers 0.000 claims abstract description 21
- 238000005245 sintering Methods 0.000 claims description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 17
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 17
- 229910052802 copper Inorganic materials 0.000 claims description 17
- 239000010949 copper Substances 0.000 claims description 17
- 229910052709 silver Inorganic materials 0.000 claims description 17
- 239000004332 silver Substances 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 238000005538 encapsulation Methods 0.000 claims 1
- 230000003071 parasitic effect Effects 0.000 abstract description 20
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000010354 integration Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 239000004615 ingredient Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/284—Applying non-metallic protective coatings for encapsulating mounted components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a power module, which relates to the technical field of semiconductors and comprises: a printed wiring board having a first surface for mounting an electronic component, and a second surface corresponding to the first surface; a first driving chip mounted on a first surface of the printed wiring board; the first gallium nitride power device is arranged on the second surface of the printed circuit board, and the position of the first gallium nitride power device is opposite to that of the first driving chip; the copper-clad ceramic substrate is arranged on one side, away from the printed circuit board, of the first gallium nitride power device; and the packaging plastic is used for packaging the printed circuit board, the first driving chip, the first gallium nitride power device and the copper-clad ceramic substrate, and the packaging plastic is exposed on one surface of the copper-clad ceramic substrate, which is deviated from the first gallium nitride power device. The method and the device can effectively reduce parasitic parameters, improve the electric energy conversion efficiency and improve the power density of the whole module.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a power module.
Background
Gallium nitride is referred to as a third generation semiconductor representative material. In the power device, compared with a silicon device, the gallium nitride device can perform high-frequency (up to 500 KHz-1 MHz) and extremely low-loss switching under high voltage, the cost of the whole power system is reduced, the conversion efficiency is improved, and the power device has higher power density, smaller volume and better heat dissipation performance. In the field of adapters with medium and small power, gallium nitride-based adapters have been mass-produced in large scale, and are expected to fully replace silicon in partial fields in the near future. Discrete gan driving brings new challenges to PCB layout because gan switches at a fast speed and parasitic parameters of the added driving circuit inevitably cause voltage and current oscillation, increase switching loss, and even damage devices.
At present, gallium nitride power devices are mainly in two forms of discrete components and a belt drive monolithic integrated IC. Conventional silicon power modules are usually IGBTs plus fast recovery diodes, and due to the limitations of materials and device structures, high-frequency and high-efficiency power control and conversion cannot be realized.
Disclosure of Invention
Existing discrete gan devices require particularly long traces on the PCB that inevitably introduce significant parasitic inductance. Meanwhile, each device and each driver need independent packaging, so that the cost is high, and the occupied circuit board area is large. Even for gan modules, the design is based on wire bonding (copper, gold, aluminum, etc.), which itself can cause parasitic inductance and resistance, and the thickness and number of the wire bonding can also limit the maximum current that can flow.
In order to overcome the above defects in the prior art, embodiments of the present invention provide a power module, which can effectively reduce parasitic parameters, improve power conversion efficiency, and improve power density of the whole module.
The specific technical scheme of the embodiment of the invention is as follows:
a power module, the power module comprising:
a printed wiring board having a first surface for mounting an electronic component, a second surface corresponding to the first surface;
a first driving chip mounted on a first surface of the printed wiring board;
a first gallium nitride power device mounted on the second surface of the printed circuit board, the first gallium nitride power device being located opposite to the first driver chip;
the copper-clad ceramic substrate is arranged on one side, away from the printed circuit board, of the first gallium nitride power device;
and the packaging plastic is used for packaging the printed circuit board, the first driving chip, the first gallium nitride power device and the copper-clad ceramic substrate, and the packaging plastic is exposed on one surface of the copper-clad ceramic substrate, which is deviated from the first gallium nitride power device.
Preferably, the printed wiring board has ceramic extending in a horizontal direction inside.
Preferably, the copper-clad ceramic substrate and the first gallium nitride power device are connected by silver sintering or copper sintering to form a first silver sintering layer or a first copper sintering layer.
Preferably, the first driving chip is a silicon driving chip.
Preferably, the packaging plastic covers the printed circuit board, the first driving chip, the first gallium nitride power device and one surface of the copper-clad ceramic substrate facing the first gallium nitride power device.
Preferably, the first gallium nitride power device and the first driving chip are electrically connected by routing inside the printed circuit board.
Preferably, the power module further includes:
a second driving chip mounted on the first surface of the printed wiring board;
a second gallium nitride power device mounted on the second surface of the printed circuit board, the second gallium nitride power device being located opposite to the second driver chip;
the copper-clad ceramic substrate is arranged on one surface of the second gallium nitride power device, which is far away from the printed circuit board.
Preferably, the copper-clad ceramic substrate and the second gallium nitride power device are connected by silver sintering or copper sintering to form a second silver sintering layer or a second copper sintering layer.
Preferably, the second gallium nitride power device and the second driving chip are electrically connected by routing inside the printed circuit board.
Preferably, the packaging plastic covers the second driving chip and the second gallium nitride power device.
The technical scheme of the invention has the following remarkable beneficial effects:
in the present invention, a first driver chip and a first gallium nitride power device are mounted on a first face and a second face of a printed wiring board respectively, and the positions of the first driving chip and the second driving chip are electrically connected relatively in a wiring way inside the printed circuit board, the connection distance between the first driving chip and the first gallium nitride power device is reduced to the greatest extent, the connecting line is extremely short, the parasitic inductance caused by the connecting line is extremely small, the parasitic parameters caused by the wiring can be greatly reduced, meanwhile, the first driving chip and the first gallium nitride power device are sealed in the same module through packaging plastics, so that the lead bonding between the first driving chip and the first gallium nitride power device is avoided, therefore, parasitic parameters are greatly reduced, the electric energy conversion efficiency is effectively improved, parasitic inductance brought by common packaging can be compared favorably with the gallium nitride single chip integration, and the defects of single function and high cost of the gallium nitride single chip integration are avoided. In addition, due to the installation layout of the first driving chip and the first gallium nitride power device, the width of the printed circuit board in the horizontal direction is greatly reduced, so that the layout of each part on the whole power module is tighter and more compact, and the power density of the whole module can be greatly improved.
Specific embodiments of the present invention are disclosed in detail with reference to the following description and drawings, indicating the manner in which the principles of the invention may be employed. It should be understood that the embodiments of the invention are not so limited in scope. The embodiments of the invention include many variations, modifications and equivalents within the spirit and scope of the appended claims. Features that are described and/or illustrated with respect to one embodiment may be used in the same way or in a similar way in one or more other embodiments, in combination with or instead of the features of the other embodiments.
Drawings
The drawings described herein are for illustration purposes only and are not intended to limit the scope of the present disclosure in any way. In addition, the shapes, the proportional sizes, and the like of the respective members in the drawings are merely schematic for facilitating the understanding of the present invention, and do not specifically limit the shapes, the proportional sizes, and the like of the respective members of the present invention. Those skilled in the art, having the benefit of the teachings of this invention, may choose from the various possible shapes and proportional sizes to implement the invention as a matter of case.
Fig. 1 is a schematic structural diagram of a power module according to a first implementation manner in an embodiment of the present disclosure;
FIG. 2 is a cross-sectional view of a first embodiment of a power module in an embodiment of the invention;
fig. 3 is a schematic structural diagram of a power module according to a second implementation manner in the embodiment of the present disclosure.
Reference numerals of the above figures:
1. a printed wiring board; 11. a first side; 12. a second face; 2. a first driver chip; 3. a first gallium nitride power device; 4. a copper-clad ceramic substrate; 5. packaging plastic; 6. a first silver sintered layer or a first copper sintered layer; 7. a second driver chip; 8. a second gallium nitride power device; 9. a second silver frit layer or a second copper frit layer.
Detailed Description
The details of the present invention can be more clearly understood in conjunction with the accompanying drawings and the description of the embodiments of the present invention. However, the specific embodiments of the present invention described herein are for the purpose of illustration only and are not to be construed as limiting the invention in any way. Any possible variations based on the present invention may be conceived by the skilled person in the light of the teachings of the present invention, and these should be considered to fall within the scope of the present invention. It will be understood that when an element is referred to as being "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "mounted," "connected," and "connected" are to be construed broadly and may include, for example, mechanical or electrical connections, communications between two elements, direct connections, indirect connections through intermediaries, and the like. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like as used herein are for illustrative purposes only and do not denote a unique embodiment.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
In order to effectively reduce parasitic parameters, improve electrical energy conversion efficiency, and improve power density of an overall module, a power module is provided in the present application, fig. 1 is a schematic structural diagram of a first implementation manner of the power module in an embodiment of the present invention, and fig. 2 is a cross-sectional diagram of the first implementation manner of the power module in the embodiment of the present invention, as shown in fig. 1 and fig. 2, the power module may include: a printed wiring board 1 having a first surface 11 for mounting an electronic component, and a second surface 12 corresponding to the first surface 11; a first driver chip 2 mounted on a first surface 11 of the printed wiring board 1; a first gallium nitride power device 3 mounted on the second surface 12 of the printed wiring board 1, the position of the first gallium nitride power device 3 being opposite to the position of the first driver chip 2; the copper-clad ceramic substrate 4 is arranged on one side, away from the printed circuit board 1, of the first gallium nitride power device 3; and the packaging plastic 5 is used for packaging the printed circuit board 1, the first driving chip 2, the first gallium nitride power device 3 and the copper-clad ceramic substrate 4, and one surface of the copper-clad ceramic substrate 4, which is far away from the first gallium nitride power device 3, is exposed out of the packaging plastic 5.
As shown in fig. 1, the printed wiring board 1 is a double-sided printed wiring board 1 having a first side 11 and a second side 12 corresponding to the first side 11, and electronic components can be mounted on both the first side 11 and the second side 12.
In a possible embodiment, the printed circuit board 1 has ceramic on the inside extending in the horizontal direction. The ceramic in the printed circuit board 1 is non-conductive and is a good thermal conductor, so that the heat transfer effect of the whole printed circuit board 1 can be effectively improved, the local heat at a certain position of the printed circuit board 1 can be quickly and uniformly dispersed to each part of the whole printed circuit board 1, the inside of the printed circuit board 1 is uniformly heated, especially, the heat on one side of the printed circuit board 1 can be transferred to the other side, so that each part can achieve the purpose of efficient heat dissipation, and the temperature of the printed circuit board can be effectively reduced.
As shown in FIG. 1, a first driver chip 2 is mounted on a first surface 11 of the printed circuit board 1, the first driver chip 2 has gold bumps, and is soldered on the printed circuit board 1 by the gold bumps, the first driver chip 2 can be a silicon driver chip or a gallium nitride driver chip, preferably a silicon driver chip, in this application, the first driver chip 2 is a BGA or L GA packaged driver chip.
In the present application, the gan driver chip may be implemented in a gan monolithic integration manner. In some gallium nitride processes, integrated resistors, capacitors, diodes, and low voltage analog active devices may be implemented using the same process. Such a process makes it possible to monolithically integrate the gallium nitride analog driver chip and the power device. However, the gallium nitride driving chip has real advantages of high breakdown electric field and lower on-resistance, lower parasitic capacitance, etc. compared to the silicon driving chip, but has disadvantages such as lack of P-type device and high cost in terms of integration. The silicon driving chip manufactured by using a silicon integrated circuit (BCD) process can provide smaller feature size which can reach 0.18um or less, lower cost and more comprehensive protection function, and is the first choice of the driving chip of the gallium nitride power device.
As shown in fig. 1, a first gan power device 3 is mounted on a second surface 12 of the printed circuit board 1, and the position of the first gan power device 3 is opposite to the position of the first driver chip 2. the first gan power device 3 and the first driver chip 2 are electrically connected by routing inside the printed circuit board 1, and the routing inside can be through metal wire or copper pillar connection, etc. in this application, the first gan power device 3 is an L GA packaged gan power device.
The first gallium nitride power device 3 may be of a depletion, normally-on type or an enhancement, normally-off type, differing by the positive and negative values of the threshold voltage. Gallium nitride power device fabrication starts from a substrate, and most existing gallium nitride power devices use silicon as the substrate material for cost considerations. The wafer size is typically 6 inches or 8 inches. Gallium nitride epitaxy techniques determine the performance of the device. Currently, the mainstream enhancement mode GaN power device uses P-type GaN technology to achieve positive threshold voltage. However, the P-type GaN layer is similar to a P/N junction diode, and has a relatively high leakage current under the condition of gate level forward voltage drop, so that it is not suitable for using too high gate level voltage. The maximum gate voltage of the gallium nitride power device is 5V to 7V at present. The lower voltage can not be matched with the existing common driving chip, and the driving chip is specially matched with the gallium nitride power device.
When a silicon driving circuit is used as a driving circuit of a gallium nitride power device, a problem of connection between the silicon driving circuit and the gallium nitride power device is inevitably involved. There are traditionally two general approaches: the other is that the gallium nitride power device and the silicon driving circuit are respectively two different chips and have respective packages. In application, the layout of the printed wiring board 1 is used to route the connections between the chips. In this way, parasitic inductance is introduced by the traces on the printed wiring board 1, causing circuit oscillation, thereby reducing efficiency. The second mode is a so-called co-package mode, that is, the gan power device and the driving circuit are arranged in parallel and co-packaged in a plastic package, and the chips are connected by wire bonding. In this way, because the connecting wire is shorter, the parasitic inductance caused by the connecting wire is smaller, and the parasitic parameters caused by the wiring can be reduced. However, because wire bonding is still required between the gan power device and the driving circuit, the parasitic inductance of the co-package mode is still not as small as that of gan monolithic integration.
As shown in fig. 1, the copper-clad ceramic substrate 4 is disposed on a side of the first gallium nitride power device 3 facing away from the printed wiring board 1, that is, the copper-clad ceramic substrate 4 is disposed below the first gallium nitride power device 3. The heat emitted by the first driver chip 2 is first transferred to the printed circuit board 1, and then transferred to the first gan power device 3. Then, the heat emitted by the first gallium nitride power device 3 and the heat transferred to the first gallium nitride power device 3 by the printed circuit board 1 are both transferred downwards to the copper-clad ceramic substrate 4, and then are emitted outwards through the copper-clad ceramic substrate 4. The copper-clad ceramic substrate 4 has a good heat dissipation effect, and can have good heat conduction performance with the first gallium nitride power device 3. Meanwhile, the lower part of the copper-clad ceramic substrate 4 is also required to be used as an electrode for connecting and electrifying other components.
Preferably, the copper-clad ceramic substrate 4 and the first gallium nitride power device 3 can be connected by silver sintering or copper sintering to form a first silver sintering layer or a first copper sintering layer 6. Of course, the copper-clad ceramic substrate 4 and the first gan power device 3 can be connected in other ways, such as silver paste bonding, but silver sintering or copper sintering has better thermal and electrical conductivity than silver paste bonding,
as shown in fig. 1, a packaging plastic 5 is used to package the printed wiring board 1, the first driver chip 2, the first gallium nitride power device 3, and the copper-clad ceramic substrate 4. The packaging plastic 5 covers the printed circuit board 1, the first driving chip 2, the first gallium nitride power device 3 and one surface of the copper-clad ceramic substrate 4 facing the first gallium nitride power device 3, so that the surface of the copper-clad ceramic substrate 4 facing away from the first gallium nitride power device 3 is exposed out of the packaging plastic 5. The encapsulating plastic 5 may preferably be an epoxy resin. Through the mode, one surface of the copper-clad ceramic substrate 4, which is far away from the first gallium nitride power device 3, can form sufficient heat exchange with the outside, so that the purpose of radiating the copper-clad ceramic substrate 4 is achieved, and the temperatures of the packaged printed circuit board 1, the first driving chip 2 and the first gallium nitride power device 3 are reduced.
In the present invention the first driver chip 2 and the first gallium nitride power device 3 are mounted on the first face 11 and the second face 12 of the printed wiring board 1 respectively, and the positions of the first driving chip and the second driving chip are electrically connected relatively by the wiring way inside the printed circuit board 1, the connection distance between the first driving chip 2 and the first gallium nitride power device 3 is reduced to the greatest extent, the connection line is extremely short, the parasitic inductance caused by the connection line is extremely small, the parasitic parameters caused by the wiring can be greatly reduced, meanwhile, the first driving chip 2 and the first gallium nitride power device 3 are sealed in the same module through the packaging plastic 5, so that the lead bonding between the first driving chip and the first gallium nitride power device is avoided, therefore, parasitic parameters are greatly reduced, the electric energy conversion efficiency is effectively improved, parasitic inductance brought by common packaging can be compared favorably with the gallium nitride single chip integration, and the defects of single function and high cost of the gallium nitride single chip integration are avoided. In addition, due to the installation layout of the first driving chip 2 and the first gallium nitride power device 3, the width of the printed circuit board 1 in the horizontal direction is greatly reduced, so that the layout of each component on the whole power module is tighter and more compact, and thus the power density of the whole module can be greatly improved.
In a possible implementation manner, fig. 2 is a schematic structural diagram of a power module according to a second implementation manner in an embodiment of the present invention, and as shown in fig. 2, the power module may further include: a second driver chip 7 mounted on the first surface 11 of the printed wiring board 1; a second gallium nitride power device 8 mounted on the second face 12 of the printed wiring board 1, the position of the second gallium nitride power device 8 being opposite to the position of the second driver chip 7; the copper-clad ceramic substrate 4 is arranged on one surface of the second gallium nitride power device 8, which is far away from the printed circuit board 1.
As shown in fig. 2, similarly, the copper-clad ceramic substrate 4 and the second gallium nitride power device 8 are connected by silver sintering or copper sintering to form a second silver sintered layer or a second copper sintered layer 9. The second gallium nitride power device 8 and the second driving chip 7 are electrically connected by routing inside the printed circuit board 1. The packaging plastic 5 covers the second driving chip 7 and the second gallium nitride power device 8.
In the above manner, the driving chip and the gallium nitride power devices can be arranged according to a half-bridge topology structure, and each gallium nitride power device can be connected with the corresponding driving chip by routing inside the printed circuit board 1, so that parasitic parameters cannot be increased due to the arrangement of a plurality of gallium nitride power devices and driving chips. In addition, in the mode, all parts on the whole power module can still be tightly and compactly arranged, and the power density of the whole module can be effectively and greatly improved.
Through same copper-clad ceramic substrate 4 and first gallium nitride power device 3, second gallium nitride power device 8 link together simultaneously, so, the heat that single gallium nitride power device and corresponding driver chip during operation produced can both be transmitted to the copper-clad ceramic substrate 4 of the monoblock large tracts of land, helps improving the radiating effect like this.
All articles and references disclosed, including patent applications and publications, are hereby incorporated by reference for all purposes. The term "consisting essentially of …" describing a combination shall include the identified element, ingredient, component or step as well as other elements, ingredients, components or steps that do not materially affect the basic novel characteristics of the combination. The use of the terms "comprising" or "including" to describe combinations of elements, components, or steps herein also contemplates embodiments that consist essentially of such elements, components, or steps. By using the term "may" herein, it is intended to indicate that any of the described attributes that "may" include are optional. A plurality of elements, components, parts or steps can be provided by a single integrated element, component, part or step. Alternatively, a single integrated element, component, part or step may be divided into separate plural elements, components, parts or steps. The disclosure of "a" or "an" to describe an element, ingredient, component or step is not intended to foreclose other elements, ingredients, components or steps.
The embodiments in the present specification are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. The above embodiments are merely illustrative of the technical ideas and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and not to limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.
Claims (10)
1. A power module, characterized in that the power module comprises:
a printed wiring board having a first surface for mounting an electronic component, a second surface corresponding to the first surface;
a first driving chip mounted on a first surface of the printed wiring board;
a first gallium nitride power device mounted on the second surface of the printed circuit board, the first gallium nitride power device being located opposite to the first driver chip;
the copper-clad ceramic substrate is arranged on one side, away from the printed circuit board, of the first gallium nitride power device;
and the packaging plastic is used for packaging the printed circuit board, the first driving chip, the first gallium nitride power device and the copper-clad ceramic substrate, and the packaging plastic is exposed on one surface of the copper-clad ceramic substrate, which is deviated from the first gallium nitride power device.
2. The power module of claim 1, wherein the interior of the printed wiring board has ceramic extending in a horizontal direction.
3. The power module of claim 1, wherein the copper-clad ceramic substrate and the first gallium nitride power device are connected by silver sintering or copper sintering to form a first silver sintered layer or a first copper sintered layer.
4. The power module of claim 1, wherein the first driver chip is a silicon driver chip.
5. The power module of claim 1, wherein the encapsulation plastic encapsulates the printed wiring board, the first driver chip, the first gallium nitride power device, and a side of the copper-clad ceramic substrate facing the first gallium nitride power device.
6. The power module of claim 1, wherein the first GaN power device is electrically connected to the first driver chip by routing wires inside the printed circuit board.
7. The power module of claim 1, further comprising:
a second driving chip mounted on the first surface of the printed wiring board;
a second gallium nitride power device mounted on the second surface of the printed circuit board, the second gallium nitride power device being located opposite to the second driver chip;
the copper-clad ceramic substrate is arranged on one surface of the second gallium nitride power device, which is far away from the printed circuit board.
8. The power module of claim 7, wherein the copper-clad ceramic substrate and the second gallium nitride power device are connected by silver sintering or copper sintering to form a second silver sintering layer or a second copper sintering layer.
9. The power module of claim 7, wherein the second GaN power device is electrically connected to the second driver chip by routing wires inside the printed circuit board.
10. The power module of claim 7, wherein the packaging plastic encapsulates the second driver chip and the second gallium nitride power device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010454036.2A CN111508945A (en) | 2020-05-26 | 2020-05-26 | Power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010454036.2A CN111508945A (en) | 2020-05-26 | 2020-05-26 | Power module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111508945A true CN111508945A (en) | 2020-08-07 |
Family
ID=71876912
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010454036.2A Pending CN111508945A (en) | 2020-05-26 | 2020-05-26 | Power module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111508945A (en) |
-
2020
- 2020-05-26 CN CN202010454036.2A patent/CN111508945A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10638633B2 (en) | Power module, power converter and manufacturing method of power module | |
| US7948069B2 (en) | Surface mountable hermetically sealed package | |
| US9468087B1 (en) | Power module with improved cooling and method for making | |
| US10784213B2 (en) | Power device package | |
| KR101519062B1 (en) | Semiconductor Device Package | |
| US9520369B2 (en) | Power module and method of packaging the same | |
| CN107195623A (en) | A kind of two-side radiation high-reliability power module | |
| KR20060017742A (en) | Semiconductor device | |
| CN207165543U (en) | A kind of low stray inductance two-side radiation power model | |
| CN107146775A (en) | A kind of low stray inductance two-side radiation power model | |
| CN207165564U (en) | A kind of two-side radiation high-reliability power module | |
| CN220155541U (en) | Multi-chip series IGBT module packaging structure | |
| CN220341219U (en) | Low parasitic inductance power packaging module based on ceramic copper-clad substrate layout | |
| CN113140530A (en) | Electronic module including semiconductor package connected to fluid heat sink | |
| CN212209492U (en) | Power module | |
| US11527456B2 (en) | Power module with organic layers | |
| CN111508945A (en) | Power module | |
| Longford et al. | Utilising advanced packaging technologies to enable smaller, more efficient GaN power devices | |
| CN112271164A (en) | Low-inductance silicon carbide module | |
| CN220172121U (en) | Packaging structure based on SOT-227 packaging module | |
| CN219917162U (en) | Power module | |
| CN220556592U (en) | DPIM three-phase rectification module | |
| CN215644461U (en) | Power module and electronic equipment | |
| CN220400580U (en) | High-efficiency radiating unit type discrete device | |
| EP4270477A2 (en) | Power module and method for manufacturing a power module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: Room f405, no.388 Ruoshui Road, Suzhou Industrial Park, Suzhou area, Suzhou pilot Free Trade Zone, 215000, Jiangsu Province Applicant after: Suzhou Quantum Semiconductor Co.,Ltd. Address before: 215000 second teaching building, No. 150 benevolence Road, Suzhou Industrial Park, Jiangsu Applicant before: Suzhou Liangwei Semiconductor Co.,Ltd. |
|
| TA01 | Transfer of patent application right |
Effective date of registration: 20240523 Address after: Room 601-2, Building 1, Suzhou Nanocity, No. 99 Jinjihu Avenue, Suzhou Industrial Park, Suzhou Area, China (Jiangsu) Pilot Free Trade Zone, Suzhou City, Jiangsu Province, 215000 Applicant after: Suzhou Liangxin Microelectronics Co.,Ltd. Country or region after: China Address before: Room f405, no.388 Ruoshui Road, Suzhou Industrial Park, Suzhou area, Suzhou pilot Free Trade Zone, 215000, Jiangsu Province Applicant before: Suzhou Quantum Semiconductor Co.,Ltd. Country or region before: China |