CN111508809A

CN111508809A - Hall effect enhanced capacitively coupled plasma source, abatement system and vacuum processing system

Info

Publication number: CN111508809A
Application number: CN202010085736.9A
Authority: CN
Inventors: 迈克尔·S·考克斯; 王荣平; 布赖恩·韦斯特; 罗杰·M·约翰逊; 科林·约翰·迪金森
Original assignee: Applied Materials Inc
Current assignee: Applied Materials Inc
Priority date: 2014-03-06
Filing date: 2015-02-09
Publication date: 2020-08-07
Anticipated expiration: 2035-02-09
Also published as: KR102435471B1; KR20220009485A; TWI679922B; TWI806214B; CN111508809B; US9240308B2; JP6738742B2; US9552967B2; CN106062925A; KR20150105250A; CN106062925B; US20170133208A1; KR102352727B1; TWI747069B; TW202025860A; JP2022140436A; WO2015134157A1; JP7091394B2; JP2017515286A; US20150255256A1

Abstract

Embodiments disclosed herein include an abatement system for abating compounds generated in a semiconductor process. The abatement system includes a plasma source having a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates, and an outer wall is disposed between the first and second plates, the outer wall surrounding the electrode. The plasma source has a first plurality of magnets disposed on a first plate, and a second plurality of magnets disposed on a second plate. The magnetic fields generated by the first and second plurality of magnets are substantially perpendicular to the electric field generated between the electrode and the outer wall. In this configuration, a dense plasma is generated.

Description

Hall effect enhanced capacitively coupled plasma source, abatement system and vacuum processing system

This application is a divisional patent application of the invention patent application filed on 2015, 2/9, with application number 201580012315.0, entitled "hall effect enhanced capacitively coupled plasma source, abatement system and vacuum processing system".

Background

Technical Field

Embodiments of the present disclosure generally relate to semiconductor processing equipment. More particularly, embodiments of the present disclosure relate to plasma sources, abatement systems, and vacuum processing systems, each for abating compounds generated in semiconductor processes.

Background

Process gases used in semiconductor processing facilities contain a wide variety of compounds that must be eliminated (abated) or disposed of before disposal (disposal) due to regulatory requirements and concerns regarding environmental and safety issues. Typically, a remote plasma source may be coupled to the processing chamber to eliminate compounds from the processing chamber. Halogen-containing plasmas and gases are frequently used for etching or cleaning processes, and components of the processing chamber and remote plasma sources are susceptible to corrosion caused by the halogen-containing plasmas and gases. Corrosion shortens the usable lifetime of the processing chamber components and the remote plasma source, and additionally introduces undesirable defects and contamination into the processing environment.

Therefore, what is needed in the art is: an improved plasma source and abatement system for abating compounds generated in a semiconductor process.

Disclosure of Invention

Embodiments disclosed herein include a plasma source, an abatement system, and a vacuum processing system, each for abating compounds generated in a semiconductor process. In one embodiment, a plasma source is disclosed. The plasma source includes a first plate having an outer edge and an inner edge, a second plate parallel to the first plate, the second plate having an outer edge and an inner edge, an outer wall disposed between the outer edge of the first plate and the outer edge of the second plate, an electrode disposed between the inner edge of the first plate and the inner edge of the second plate, a first plurality of magnets disposed on the first plate, and a second plurality of magnets disposed on the second plate.

In another embodiment, an abatement system is disclosed. The abatement system includes a plasma source including a body having a first end configured to couple to a foreline and a second end configured to couple to a conduit. The plasma source further includes an electrode disposed within the body, a first plurality of magnets disposed on a first plate of the body, and a second plurality of magnets disposed on a second plate of the body.

In another embodiment, a vacuum processing system is disclosed. A vacuum processing system includes a vacuum processing chamber and a plasma source including a first plate, a second plate parallel to the first plate, an outer wall, an electrode, a first plurality of magnets, and a second plurality of magnets, the first plate having an outer edge and an inner edge, the second plate having an outer edge and an inner edge, the outer wall disposed between the outer edge of the first plate and the outer edge of the second plate, the electrode disposed between the inner edge of the first plate and the inner edge of the second plate, the first plurality of magnets disposed on the first plate, and the second plurality of magnets disposed on the second plate.

Brief Description of Drawings

So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this disclosure and are therefore not to be considered limiting of its scope, for the disclosure may admit to other equally effective embodiments.

FIG. 1A is a schematic side view of a vacuum processing system having a plasma source.

Fig. 1B is a cross-sectional view of the plasma source of fig. 1A.

Fig. 2A is a cross-sectional perspective view of a plasma source.

Fig. 2B is a cross-sectional bottom view of the plasma source.

Fig. 2C is an enlarged view of the metal shield.

Fig. 3 is a perspective view of a plasma source.

FIG. 4 schematically illustrates components associated with a plasma source.

FIG. 5 is a perspective view of the exhaust cooling device.

To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

Detailed description of the preferred embodiments

Fig. 1A is a schematic side view of a vacuum processing system 170, the vacuum processing system 170 having a plasma source 100 used in an abatement system 193. The vacuum processing system 170 includes at least one vacuum processing chamber 190 and a plasma source 100. The abatement system 193 includes at least the plasma source 100. The vacuum processing chamber 190 is generally configured to perform at least one integrated circuit fabrication process, such as a deposition process, an etch process, a plasma treatment process, a pre-clean process, an ion implantation process, or other integrated circuit fabrication process. The process performed in the vacuum processing chamber 190 may be a plasma assisted process. For example, the process performed in the vacuum processing chamber 190 may be a plasma deposition process for depositing a silicon-based material.

The vacuum processing chamber 190 has a chamber exhaust port 191, the chamber exhaust port 191 being coupled to the plasma source 100 of the abatement system 193 via a foreline 192. The exhaust of the plasma source 100 is coupled to pump and facility exhaust, which are exemplarily indicated in fig. 1A with a single reference numeral 196, by an exhaust conduit 194. The vacuum processing chamber 190 is typically pumped down, and the facility exhaust typically includes a scrubber or other exhaust cleaning device in preparation for the exhaust of the vacuum processing chamber 190 to enter the atmosphere.

The abatement process is performed on the gases and/or other materials exiting the vacuum processing chamber 190 using the plasma source 100 so that these gases and/or other materials may be converted into more environmentally friendly and/or more favorable compositions for the processing equipment. Details of the plasma source 100 are further described below.

In some embodiments, the abatement agent source 114 is coupled to the foreline 192 and/or the plasma source 100. The abatement agent source 114 provides an abatement agent into the plasma source 100 that may be energized to react with or assist in converting the material exiting the vacuum processing chamber 190 to a more environmentally friendly and/or more favorable composition for the process tool. Optionally, a purge gas source 115 may be coupled to the plasma source 100 for reducing deposition on components within the plasma source 100.

An exhaust cooling device 117 may be coupled between the plasma source 100 and the exhaust conduit 194 for reducing the temperature of the exhaust exhausted from the plasma source 100. In one example, the exhaust cooling device 117 is part of the abatement system 193.

Optionally, the pressure regulation module 182 may be coupled to at least one of the plasma source 100 or the exhaust conduit 194. The pressure regulation module 182 injects a pressure regulation gas, such as argon, nitrogen, or other suitable gas that enables the pressure within the plasma source 100 to be better controlled, and thereby provides more efficient abatement performance. In one example, the pressure regulation module 182 is part of the abatement system 193.

Fig. 1B is a side view of the plasma source 100 according to one embodiment. The plasma source 100 may be disposed downstream of the vacuum processing chamber 190. The plasma generated in the plasma source 100 partially or completely excites and/or decomposes the compounds in the exhaust from the vacuum processing chamber 190 and converts the compounds in the exhaust to a more benign form. In one embodiment, due to the ability of the plasma source 100 to generate a dense plasma, the plasma source 100 may function as a remote plasma source disposed upstream of the processing chamber to deliver plasma products such as molecular or atomic species (i.e., the dense plasma) into the processing chamber.

The plasma source 100 may include a body 102, the body 102 having a first end 104 and a second end 106. The first end 104 may be parallel to the second end 106. The first end 104 may have an opening 120, the opening 120 configured to couple to the foreline 192 with or without a flange, and the second end 106 may have an opening 122, the opening 122 configured to couple to the exhaust cooling device 117 with or without a flange. The flange is further illustrated and described below with reference to fig. 3. The body 102 may be circular, square, rectangular, or in other suitable shapes. In one embodiment, the body 102 has a toroidal (toroidal) shape. An opening 108 may be formed through the body 102. The opening 108 may be circular, square, rectangular, or in other suitable shapes. In one embodiment, the body 102 is annular (annular). In other embodiments, the body 102 does not include the opening 108.

A gas mixture 110, such as a by-product in the exhaust exiting the vacuum processing chamber 190 or a precursor and/or carrier gas used to generate a remote plasma in the example where the plasma source 100 is a remote plasma source, may enter the plasma source 100 through an opening 120 at the first end 104. Gas mixture 110 may be decomposed by the plasma formed in plasma region 124 and treated with an abatement agent and exit through opening 122 at second end 106 as a reduced risk material. The gas mixture 110 may be split by the opening 108 into two

streams

110A and 110B, and then combined into a stream 110C upon exiting the body 102, as represented by path "a" illustrated in fig. 1B. If the gas mixture 110 is a byproduct in the exhaust exiting the vacuum processing chamber, one or more eliminants may be introduced into the plasma source 100 from an eliminant source 114 shown in FIG. 1A. The by-products in the effluent may include materials containing silicon, tungsten, titanium, or aluminum. Examples of silicon-containing materials that may be eliminated from the effluent by employing the plasma source 100 disclosed herein include: such as silicon oxide (SiO), silicon dioxide (SiO)₂) Silane (SiH)₄) Disilane, silicon tetrachloride (SiCl)₄) Silicon nitride (SiN)_x) Dichlorosilane (SiH)₂Cl₂) Hexachlorodisilane (Si)₂Cl₆) Bis (tert-butylamino) silane, trisilylamine (trisilylamine), dimethylsilylmethane (disilylmethane), trisilylmethane (trisilylmethane), tetrasilylmethane (tetrasilylmethane), Tetraethoxysilane (TEO)S)(Si(OEt)₄) Disiloxanes (e.g., disiloxanes (SiH)₃OSiH₃) Trisiloxane (SiH)₃OSiH₂OSiH₃) Tetrasiloxane (SiH)₃OSiH₂OSiH₂OSiH₃) And cyclotrisiloxanes (cyclotrisiloxanes; -SiH₂OSiH₂OSiH₂O-)). Examples of tungsten-containing materials present in the effluent that can be eliminated by employing the methods disclosed herein include: for example W (CO)₆、WF₆、WCl₆Or WBr₆. Examples of titanium-containing materials present in the effluent that can be eliminated by employing the methods disclosed herein include: for example TiCl₄And TiBr₄. Examples of aluminum-containing materials present in the effluent that can be eliminated by employing the methods disclosed herein include: such as trimethylaluminum.

The eliminators may include: such as CH₄、H₂O、H₂、NF₃、SF₆、F₂、HCl、HF、Cl₂、HBr、H₂、H₂O、O₂、N₂、O₃、CO、CO₂、NH₃、N₂O、CH₄And combinations of the foregoing. The scavenger may also comprise CH_xF_yAnd O₂And/or H₂A combination of O, and CF_xAnd O₂And/or H₂A combination of O. Different scavengers can be used for effluents having different compositions.

Fig. 2A is a cross-sectional perspective view of a plasma source 100 according to one embodiment. As shown in fig. 2A, the body 102 may include an outer wall 204, an inner wall 206, a first plate 203, and a second plate 205. The first plate 203 and the second plate 205 may have an annular shape, and the outer wall 204 and the inner wall 206 may be cylindrical. The inner wall 206 may be a hollow electrode that may be coupled to an RF source (not shown). The outer wall 204 may be grounded. The first plate 203 and the second plate 205 may be concentric with the inner wall 206. The first plate member 203 can have an outer edge 207 and an inner edge 209, and the second plate member 205 can have an outer edge 211 and an inner edge 213. The outer wall 204 may have a first end 212 and a second end 214, and the inner wall 206 may have a first end 216 and a second end 218. A first insulating ring 230 may be disposed adjacent the first end 216 of the inner wall 206 and a second insulating ring 232 may be disposed adjacent the second end 218 of the inner wall 206. The insulator rings 230, 232 may be made of an insulating ceramic material. The outer edge 207 of the first plate member 203 can be adjacent to the first end 212 of the outer wall 204 and the outer edge 211 of the second plate member 205 can be adjacent to the second end 214 of the outer wall 204. In one embodiment, ends 212, 214 of outer wall 204 are in contact with

outer edges

207, 211, respectively. The inner edge 209 of the first plate 203 may abut the first insulating ring 230 and the inner edge 213 of the second plate 205 may abut the second insulating ring 232. The plasma region 124 is defined between the outer wall 204 and the inner wall 206, and between the first plate 203 and the second plate 205, and a capacitively coupled plasma may be formed in the plasma region 124.

To keep the inner wall 206 cool during operation, a cooling jacket (jack) 220 may be coupled to the inner wall 206. The inner wall 206 may have a first surface 242 facing the outer wall 204 and a second surface 244 opposite the first surface. In one embodiment, both

surfaces

242, 244 are linear and cooling jacket 220 is coupled to second surface 244. In one embodiment, the first surface 242 is curved and the second surface 244 is linear, as shown in fig. 2B. Cooling channels 208 may be formed in cooling jacket 220, and cooling channels 208 are coupled to coolant inlet 217 and coolant outlet 219 for flowing coolant, such as water, into and out of cooling jacket 220. A first plurality of magnets 210 may be disposed on the first plate 203. In one embodiment, the first plurality of magnets 210 may be a magnetron having an array of magnets, and the first plurality of magnets may have an annular shape. The second plurality of magnets 240 may be disposed on the second plate 205, and the second plurality of magnets 240 may be a magnetron having an array of magnets and the second plurality of magnets may have the same shape as the first plurality of magnets 210. In one embodiment, the second plurality of magnets 240 is a magnetron and has a ring shape. In one embodiment, the

magnets

210, 240 are linear arrays formed near the

ends

104, 106. The

magnets

210, 240 may have opposite polarities facing the plasma region 124. The

magnets

210, 240 may be rare earth magnets, such as neodymium ceramic magnets. One or more gas injection ports 270 may be formed in the first plate 203 or the first and

second plates

203, 205 for injecting an abating agent and/or a purge gas. The purge gas may reduce deposition on the shields 250, 252 (shown in fig. 2B). Alternatively, the gas injection ports 270 may be formed in the foreline 192.

Fig. 2B is a cross-sectional bottom view of the plasma source 100 according to one embodiment. As shown in fig. 2B, the first surface 242 of the inner wall 206 is provided with a plurality of grooves 246. The groove 246 may be a continuous groove. Although the first surface 242 illustrated in fig. 2B is curved, the groove 246 may be formed on the linear first surface 242 as illustrated in fig. 2A. During operation, the inner wall 206 is powered by a Radio Frequency (RF) power source and the outer wall 204 is grounded, thereby creating an oscillating or constant electric field "E" in the plasma region 124 depending on the type of power applied, i.e., RF or Direct Current (DC), or some frequency in between. Bipolar direct current and bipolar pulsed direct current may also be used with the inner and outer walls forming the two opposing electrodes. The

magnets

210, 240 generate a generally uniform magnetic field "B" that is substantially perpendicular to the electric field "E". In this configuration, the resultant force bends the current that would otherwise be in the direction of the electric field "E" toward the end 106 (out of the paper), and this force significantly increases the plasma density by limiting plasma electron loss from the grounded wall. This results in a ring oscillator current being substantially directed away from the grounded wall under the application of radio frequency power. This results in a constant circular current being directed largely away from the grounded wall in the case of an applied direct current power. The effect of this current deviation (hall effect) created by the applied electric field is referred to as the "hall effect". The plasma formed in plasma region 124 decomposes at least a portion of the by-products in the exhaust that flows from opening 120 at first end 104. The scavenger may also be injected to react with and form less dangerous compounds with the decomposition products. In one embodiment, the effluent includes silane and the abating agent, which may be water or oxygen, converts the silane in the effluent to glass.

A first metal shield 250 may be disposed inside the plasma region 124 adjacent to the first plate 203, a second metal shield 252 may be disposed inside the plasma region 124 adjacent to the second plate 205, and a third metal shield 259 may be disposed inside the plasma region adjacent to the outer wall 204. Since materials may be deposited on the

shields

250, 252, 259, these shields may be removable, replaceable, and/or reusable. The first metal shield 250 and the second metal shield 252 may have a similar configuration. In one embodiment, the first metal shield 250 and the second metal shield 252 both have an annular shape. The first and

second metal shields

250 and 252 each include a stack (stack) of metal plates 254a to 254e that are isolated from each other. One or more gaps 272 (shown in fig. 2A) may be formed in each of the metal plates 254 a-254 e to allow for expansion without deforming the metal plates 254 a-254 e. Fig. 2C is an enlarged view of the metal shield 250 according to one embodiment. For clarity, some components of the plasma source 100, such as the one or more gas injection ports 270, are omitted. Each of the plates 254 a-254 e may be annular and may have an inner edge 256 and an outer edge 258. The metal plates 254a to 254e may be coated to change the shield surface emissivity. The coating may be an anodized material to improve chemical resistance, radiative heat transfer, and stress reduction (reduction). In one embodiment, the metal plates 254 a-254 e are coated with black alumina. The inner portion 274 of the metal plate 254a may be made of a ceramic material for preventing arcing and achieving dimensional stability. The inner edges 256 of the metal plates 254 a-254 e are spaced from each other by means of an insulating washer 260, so that the metal plates 254 a-254 e are isolated from each other. The washer 260 also spaces the plate 254e from the first plate member 203. The stack of metal plates 254 a-254 e may be secured by one or more ceramic rods or spacers (not shown). One or more ceramic rods may pass through the stack of washers and metal plates 254 a-254 e, with one end of each ceramic rod coupled to the inner wall 206 and the other end of each ceramic rod coupled to the first/

second plates

203, 205.

In one embodiment, the distance "D1" between the inner edge 256 and the outer edge 258 of the plate 254a is less than the distance "D2" between the inner edge 256 and the outer edge 258 of the plate 254b, the distance "D2" is less than the distance "D3" between the inner edge 256 and the outer edge 258 of the plate 254c, the distance "D3" is less than the distance "D4" between the inner edge 256 and the outer edge 258 of the plate 254D, and the distance "D4" is less than the distance "D5" between the inner edge 256 and the outer edge 258 of the plate 254 e. In other words, the distance between the inner edge 256 and the outer edge 258 of the plate member is related to the plate position, i.e., the further the plate is disposed from the plasma region 124, the greater the distance between the inner edge 256 and the outer edge 258. In this configuration, the voltage between the inner wall 206 and the outer wall 204 is divided by six due to the presence of six gaps as follows: the gap between the inner wall 206 and the outer edge 258 of the plate 254a, the gap between the outer edge 258 of the plate 254a and the outer edge 258 of the plate 254b, the gap between the outer edge 258 of the plate 254b and the outer edge 258 of the plate 254c, the gap between the outer edge 258 of the plate 254c and the outer edge 258 of the plate 254d, the gap between the outer edge 258 of the plate 254d and the outer edge 258 of the plate 254e, and the gap between the outer edge 258 of the plate 254e and the outer wall 204. Each gap has a small potential and therefore the electric field across the gap is small, such regions cannot light up and dissipate the applied power, thereby forcing power into the plasma region 124, creating a plasma in the plasma region 124. Without the

shields

250, 252 as described above, there may be a partial plasma discharge between the first end 216 of the inner wall 206 and the first end 212 of the outer wall 204 and between the second end 218 of the inner wall 206 and the second end 214 of the outer wall 204, and the plasma region 124 may not be filled with plasma.

The spaces between metal plates 254 a-254 e may be dark spaces that may be bridged by material deposited on the plates, causing the plates to short to each other. To prevent this from occurring, in one embodiment, each of the metal plates 254 a-254 e includes a step 262 so that the outer edge 258 of each of the metal plates 254 a-254 e is spaced farther from the adjacent plate. The step 262 causes the outer edge 258 to become non-linear with respect to the inner edge 256. Each step 262 protects dark space 264 formed between adjacent metal plates so that no material is deposited in dark space 264.

The outer wall 204, inner wall 206, and shields 250, 252, 259 may all be made of metal because metal is resistant to most chemicals used in semiconductor processing. The type of metal used may depend on the chemistry used in the vacuum processing chamber upstream of the plasma source 100. In one embodiment, where chlorine based chemistry is used, the metal may be stainless steel, such as 316 stainless steel. The insulating

rings

230, 232 in chlorine-based chemistries may be made of quartz. In another embodiment, a fluorine-based chemistry is used, then the metal may be aluminum and the insulator rings 230, 232 may be made of aluminum oxide. The inner wall 206 may be made of anodized aluminum (anodized aluminum) or painted aluminum.

In one example, a plasma source includes a cylindrical electrode having a first end and a second end, an outer cylindrical wall surrounding the cylindrical electrode, and the outer cylindrical wall having a first end and a second end. The plasma source further includes a first annular plate having an inner edge and an outer edge, the inner edge being proximate the first end of the cylindrical electrode and the outer edge being proximate the first end of the outer cylindrical wall. The plasma source further includes a second annular plate having an inner edge and an outer edge, the inner edge being proximate the second end of the cylindrical electrode and the outer edge being adjacent the second end of the outer cylindrical wall. The plasma region is defined by a cylindrical electrode, a cylindrical outer wall, a first annular plate, and a second annular plate. The plasma source further includes a first plurality of magnets disposed on the first annular plate and a second plurality of magnets disposed on the second annular plate.

In another example, the plasma source comprises a first annular plate having an outer edge and an inner edge, a second annular plate parallel to the first annular plate, the second annular plate having an outer edge and an inner edge, and wherein the first annular plate has a surface facing the second annular plate, the second annular plate having a surface facing the first annular plate. The plasma source further includes an outer cylindrical wall disposed between outer edges of the first and second annular plates, a cylindrical electrode disposed between inner edges of the first and second annular plates, a first shield disposed adjacent to a surface of the first annular plate, and a second shield disposed adjacent to a surface of the second annular plate.

Fig. 3 is a perspective view of the plasma source 100. The inlet flange 302 and the outlet flange 304 may be coupled to the first end 104 and the second end 106 of the plasma source 100, respectively. The inlet flange 302 may be coupled to the foreline 192, while the second flange 304 may be coupled to the exhaust cooling device 117, as shown in fig. 1A. The

flanges

302, 304 may be coupled to the first end 104 and the second end 106 of the plasma source 100, respectively, by any suitable method. The box 306 may be disposed on the plasma source 100 for enclosing a radio frequency matcher (not shown).

Fig. 4 schematically illustrates components associated with the plasma source 100. The rack 400 or other container/support structure may include an ac distribution box 402, an rf generator 404, and a controller 406. The ac distribution box 402 feeds an rf generator 404 and a controller 406. The RF generator 404 generates RF power, which may be supplied to the plasma source 100 via an RF match. The controller 406 communicates with a semiconductor manufacturing tool or semiconductor manufacturing equipment and controls the RF generator 404 and process gases.

Fig. 5 is a perspective view of the exhaust cooling device 117. As the excited exhaust in the plasma source 100 exits the plasma source 100 through the second end 106, the excited exhaust may recombine (recombine), and the recombination reaction releases energy and causes the exhaust exiting the plasma source 100 to heat up. Effluent having high temperatures, such as above 150 ℃, may damage the pump 196. To cool the exhaust having a high temperature, an exhaust cooling device 117 may be coupled to the second end 106 of the plasma source 100. Alternatively, the exhaust cooling device 117 may be coupled into the exhaust conduit 194 downstream of the plasma source 100 and upstream of the pressure regulation module 182. The exhaust cooling device 117 may include a first end 502 and a second end 504, the first end 502 for coupling to the flange 304 and the second end 504 for coupling to the exhaust conduit 194. A cavity 505 may be formed between the first end 502 and the second end 504, and a cooling plate 506 may be disposed in the cavity 505. The cooling plate 506 may include cooling channels (not shown) formed in the cooling plate 506, and the coolant inlet 508 and the coolant outlet 510 may be disposed on the cooling plate 506. A coolant, such as water, may flow into the cooling channels from a coolant inlet 508 and out a coolant outlet 510. A plurality of holes 512 may be formed in the cooling plate to allow the hot exhaust to pass therethrough. The diameter of the hole 512 may be large enough so that there is minimal to no pressure build-up. In one embodiment, the apertures 512 each have a diameter of about 0.5 inches and a pressure restriction (pressure restriction) of less than about 100 millitorr.

While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

1. A plasma source, comprising:

a first plate having an outer edge and an inner edge;

a second plate parallel to the first plate, wherein the second plate has an outer edge and an inner edge;

an outer wall disposed between an outer edge of the first plate and an outer edge of the second plate;

an electrode disposed between an inner edge of the first plate and an inner edge of the second plate, wherein a plasma region is defined by the electrode, the outer wall, the first plate, and the second plate;

a first shield disposed within the plasma region adjacent to the first plate; and

a second shield disposed within the plasma region adjacent to the second plate.

2. The plasma source of claim 1, wherein the first plate and the second plate are annular.

3. The plasma source of claim 1, wherein the outer wall has a first end and a second end, wherein the first end is in contact with the outer edge of the first plate and the second end is in contact with the outer edge of the second plate.

4. The plasma source of claim 3, wherein the electrode has a first end and a second end, wherein the first end is proximate to the inner edge of the first plate and the second end is proximate to the inner edge of the second plate.

5. The plasma source of claim 4, further comprising: a first insulating ring disposed between the first end of the electrode and the inner edge of the first plate.

6. The plasma source of claim 5, further comprising: a second insulating ring disposed between the second end of the electrode and the inner edge of the second plate.

7. The plasma source of claim 1, further comprising: a first plurality of magnets disposed on the first plate; and a second plurality of magnets disposed on the second plate.

8. The plasma source of claim 7, wherein the first plurality of magnets have an annular shape and the second plurality of magnets have an annular shape.

9. The plasma source of claim 8, wherein a polarity of the first plurality of magnets facing the plasma region is opposite a polarity of the second plurality of magnets facing the plasma region.

10. A plasma source, comprising:

a first annular plate having an outer edge and an inner edge;

a second annular plate parallel to the first annular plate, wherein the second annular plate has an outer edge and an inner edge;

a cylindrical outer wall disposed between an outer edge of the first annular plate and an outer edge of the second annular plate;

a cylindrical electrode disposed between an inner edge of the first annular plate and an inner edge of the second annular plate, wherein a plasma region is defined by the cylindrical electrode, the cylindrical outer wall, the first annular plate, and the second annular plate;

a first shield disposed within the plasma region adjacent to the first annular plate; and

a second shield disposed within the plasma region adjacent to a surface of the second annular plate.

11. The plasma source of claim 10, further comprising: a third shield disposed adjacent to the cylindrical outer wall.

12. The plasma source of claim 10, wherein the first shield and the second shield each comprise a stack of plates.

13. The plasma source of claim 12, wherein the plates are annular and each have an inner edge and an outer edge.

14. The plasma source of claim 13, wherein each plate has a different distance between the inner edge and the outer edge.

15. The plasma source of claim 14, wherein each plate has a step and the outer edge is non-linear with respect to the inner edge.

16. A vacuum processing system, comprising:

a vacuum processing chamber;

a foreline coupled to the vacuum processing system; and

a plasma source coupled to the foreline, the plasma source comprising:

a first plate having an outer edge and an inner edge;

a second shield disposed within the plasma region adjacent to the second plate.

17. The vacuum processing system of claim 16, further comprising: an abatement agent source coupled to the foreline.

18. The vacuum processing system of claim 16, further comprising: an abatement agent source coupled to the plasma source.

19. The vacuum processing system of claim 16, further comprising: a first plurality of magnets disposed on the first plate; and a second plurality of magnets disposed on the second plate.

20. The vacuum processing system of claim 16, wherein the plasma source further comprises a cooling sleeve coupled to the electrode.