CN111500992A - Aluminum-scandium alloy target blank and preparation method and application thereof - Google Patents
Aluminum-scandium alloy target blank and preparation method and application thereof Download PDFInfo
- Publication number
- CN111500992A CN111500992A CN202010497464.3A CN202010497464A CN111500992A CN 111500992 A CN111500992 A CN 111500992A CN 202010497464 A CN202010497464 A CN 202010497464A CN 111500992 A CN111500992 A CN 111500992A
- Authority
- CN
- China
- Prior art keywords
- aluminum
- scandium
- scandium alloy
- preparation
- target blank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
- C22C1/026—Alloys based on aluminium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
Abstract
The invention provides an aluminum-scandium alloy target blank and a preparation method and application thereof, and relates to the technical field of aluminum-scandium alloy preparation. The preparation method of the aluminum-scandium alloy target blank provided by the invention comprises the following steps: placing an aluminum source and a scandium source in a water-cooled copper crucible, vacuumizing, filling inert gas, and repeatedly performing arc melting to obtain molten alloy liquid; condensing the molten alloy liquid under the protection of inert gas to obtain an aluminum-scandium alloy cast ingot; and sequentially carrying out electromagnetic stirring and repeated thermal mechanical treatment on the aluminum-scandium alloy cast ingot to obtain an aluminum-scandium alloy target blank. The method carries out arc melting in vacuum and inert atmosphere, reduces the oxygen content in the aluminum-scandium alloy, repeats the arc melting, electromagnetic stirring and repeated thermal mechanical processing, improves the cast structure of the aluminum-scandium alloy and repairs the defects of the aluminum-scandium alloy.
Description
Technical Field
The invention relates to the technical field of target material preparation, in particular to an aluminum-scandium alloy target blank and a preparation method and application thereof.
Background
Film Bulk Acoustic Resonator (FBAR) and Bulk Acoustic Wave (BAW) resonator technologies are a new generation of radio frequency filters, duplexers and multiplexers, and are increasingly frequently applied in the field of 5G mobile communications. The basic structure of the FBAR is shown in fig. 1-2, and is composed of a piezoelectric film on a silicon substrate and upper and lower metal film electrodes. The FBAR filter has good application prospect, can work in a frequency band of 1-20GHz, and has the characteristics of high quality factor (Q factor), small size, low loss, excellent temperature stability and compatibility with a complementary MOS integrated circuit (CMOS IC) formed by a PMOS tube and an NMOS tube. One index for evaluating the performance of an acoustic wave resonator is the electromechanical coupling coefficient (k)t2) It represents the efficiency of energy transfer between the electrode and the piezoelectric material; under otherwise identical conditions, k is generally regarded ast2Higher acoustic resonator performance is better than kt2Thus, it is generally desirable to use k in high performance wireless applications, such as 5G and L TE applicationst2A higher level acoustic resonator.
AlN films are often used as the piezoelectric layer material of FBAR devices due to their high acoustic velocity and high Q value. However, its electromechanical coupling coefficient is only about 6.5%, which is far from adequate for the application of FBAR/BAW filters. K of acoustic wave resonatort2Is influenced by the dimensions, composition, structural properties, etc. of the piezoelectric material and the electrodes, which in turn are influenced by the materials and manufacturing processes used to manufacture the acoustic wave resonator. At present, k is improvedt2The method mainly comprises the step of adding scandium or other rare earth elements such as yttrium and erbium into a piezoelectric material of the acoustic wave resonator. Among them, the application prospect of the ScAlN film in FBAR/BAW devices has attracted high attention in the field of materials. The ScAlN thin film is generally prepared by utilizing a high-purity aluminum target and a high-purity scandium target through reactive co-sputtering deposition, but the ScAlN thin film prepared by the method has extremely poor component uniformity and Kt2The change range is large, the film performance is seriously influenced, and researches show thatThe ScAlN film prepared by sputtering the aluminum-scandium alloy target blank can improve the uniformity of the film component and Kt2And film properties.
At present, relatively few reports are made at home and abroad on the preparation of the aluminum-scandium alloy target blank with high scandium content. Chinese patent CN106086567A discloses a method for preparing an aluminum-scandium alloy with high scandium content, which comprises mixing aluminum powder and scandium powder according to a certain proportion, grinding by a planetary ball mill to mechanically alloy the alloy powder, and then pre-pressing and sintering. Although the aluminum-scandium alloy with high scandium content prepared by the method has high compactness, the defects of nonuniform microstructure, scandium segregation and the like exist, and the film forming performance is influenced.
Disclosure of Invention
In view of this, the present invention aims to provide an aluminum-scandium alloy target blank, and a preparation method and an application thereof. The preparation method provided by the invention is simple to operate, and the prepared aluminum-scandium alloy target blank is low in oxygen content, high in density and excellent in film forming performance.
In order to achieve the above object, the present invention provides the following technical solutions:
the invention provides a preparation method of an aluminum-scandium alloy target blank, which comprises the following steps:
placing an aluminum source and a scandium source in a water-cooled copper crucible, vacuumizing, filling inert gas, and repeatedly performing arc melting to obtain molten alloy liquid;
condensing the molten alloy liquid under the protection of inert gas to obtain an aluminum-scandium alloy cast ingot;
and sequentially carrying out electromagnetic stirring and repeated thermal mechanical treatment on the aluminum-scandium alloy cast ingot to obtain an aluminum-scandium alloy target blank.
Preferably, the vacuum degree after vacuum pumping is 3 × 10-3～4×10-3Pa; the current of arc melting is 410-450A, and the time of single arc melting is independently 70-75 s.
Preferably, the number of times of repetition of the arc melting is 5 to 7.
Preferably, the current of the electromagnetic stirring is 330-340A, and the time is 1-2 min.
Preferably, the thermomechanical treatment is forging or rolling; the temperature of the thermal mechanical treatment is 900-1050 ℃, and the time of single thermal mechanical treatment is independently 2-4 min.
Preferably, the deformation rate of the aluminum-scandium alloy ingot in the single thermomechanical treatment process is 25-30%.
Preferably, the ratio of the number of atoms of scandium and aluminum in the molten alloy liquid is (33 to 45): (55-67).
Preferably, the purity of the aluminum is more than or equal to 99.999 percent; the purity of the scandium is more than or equal to 99.99%.
The invention provides the aluminum-scandium alloy target blank prepared by the preparation method in the technical scheme, wherein the oxygen content of the aluminum-scandium alloy target blank is less than 200ppm, and the density is more than or equal to 97%.
The invention also provides application of the aluminum-scandium alloy target blank in the technical scheme in preparation of an ScAlN thin film or as an aluminum-scandium alloy sputtering target material of an FBAR/BAW device.
The invention provides a preparation method of an aluminum-scandium alloy target blank, which comprises the following steps: placing an aluminum source and a scandium source in a water-cooled copper crucible, vacuumizing, filling inert gas, and repeatedly performing arc melting to obtain molten alloy liquid; condensing the molten alloy liquid under the protection of inert gas to obtain an aluminum-scandium alloy cast ingot; and sequentially carrying out electromagnetic stirring and repeated thermal mechanical treatment on the aluminum-scandium alloy cast ingot to obtain an aluminum-scandium alloy target blank. The method disclosed by the invention can be used for carrying out repeated arc melting and electromagnetic stirring in vacuum and inert atmosphere, so that the uniformity of the molten and fused gold liquid can be obviously improved, the histochemical composition of the solidified aluminum-scandium alloy ingot is uniform, no obvious defect exists, and the oxygen content in the aluminum-scandium alloy can be reduced; the subsequent thermal mechanical treatment can further refine the crystal grains of the aluminum-scandium alloy ingot and improve the cast structure of the aluminum-scandium alloy ingot. The invention improves the cast structure of the aluminum-scandium alloy and repairs the defects thereof by repeating electric arc melting, electromagnetic stirring and thermal mechanical processing, and the cooling speed of the water-cooled copper crucible is high, thereby reducing the scandium segregation in the aluminum-scandium alloy and ensuring that the target blank has uniform grains. The finally obtained aluminum-scandium alloy target blank has no defects of pores, segregation and the like, and has uniform microstructure, high target blank density and good film forming performance. As shown in the example results, the average grain size of the aluminum-scandium alloy target blank prepared by the invention is 45-55 μm, the oxygen content is 190-195 ppm, and the density is more than or equal to 97%; and the preparation method is simple to operate and suitable for industrial production.
Drawings
FIG. 1 is a schematic three-dimensional structure of an FBAR;
FIG. 2 is a schematic diagram of a piezoelectric coupling layer of an FBAR;
FIG. 3 is a process flow diagram for preparing an aluminum scandium alloy target blank;
fig. 4 is a scanning electron microscopic total spectrogram of the aluminum-scandium alloy target blank prepared in example 1, in which, (a) is a scanning area micro-microstructure image, (b) is an Al element distribution image, (c) is an Sc element distribution image, and (d) is an O element distribution image;
fig. 5 is a microstructure diagram of aluminum-scandium alloy target blanks prepared in examples 1 to 3, in which (a) is example 1, (b) is example 2, and (c) is example 3.
Detailed Description
The invention provides a preparation method of an aluminum-scandium alloy target blank, which comprises the following steps:
placing an aluminum source and a scandium source in a water-cooled copper crucible, vacuumizing, filling inert gas, and repeatedly performing arc melting to obtain molten alloy liquid;
condensing the molten alloy liquid under the protection of inert gas to obtain an aluminum-scandium alloy cast ingot;
and sequentially carrying out electromagnetic stirring and repeated thermal mechanical treatment on the aluminum-scandium alloy cast ingot to obtain an aluminum-scandium alloy target blank.
In the present invention, all the raw material components are commercially available products well known to those skilled in the art unless otherwise specified.
And placing an aluminum source and a scandium source in a water-cooled copper crucible, vacuumizing, filling inert gas, and repeatedly performing arc melting to obtain molten alloy liquid.
In the present invention, the aluminum source is preferably aluminum. In the present invention, the aluminum is preferably wiped with an organic solvent, acid-washed, water-washed and dried before use. In the present invention, the organic solvent preferably includes ethyl acetate or acetone; the wiping is preferably performed by dipping absorbent cotton in an organic solvent. In the invention, the acid used for acid washing preferably comprises a sulfuric acid solution, a hydrochloric acid solution and a phosphoric acid solution, and the mass percentage concentration of the acid is preferably 75-97%, and more preferably 80-95%; the temperature of the acid washing is preferably room temperature; the pickling time is not particularly limited, and grease on the surface of the aluminum after descaling can be completely removed. The washing frequency is not specially limited, and the sulfuric acid solution and the metal ions on the surface of the aluminum can be removed completely. In the present invention, the drying mode is preferably drying; the drying temperature is preferably 20-40 ℃, more preferably 25 ℃, the drying time is not particularly limited, and the moisture in the aluminum can be completely removed. In the present invention, the purity of the aluminum is preferably not less than 99.999%.
In the present invention, the scandium source is preferably scandium. In the present invention, the scandium source is preferably dried before use; the drying mode is preferably drying; the drying temperature is preferably 20-100 ℃, more preferably 25-50 ℃, most preferably 25 ℃, and the drying time is preferably 3-5 min. In the invention, the purity of scandium is more than or equal to 99.99%. In the invention, the aluminum is preferably arranged at the bottom layer of the water-cooled copper crucible, and the scandium is preferably arranged on the surface of the aluminum; the melting point of the aluminum is lower than that of the scandium, the aluminum can be firstly melted by the placing mode, and the scandium can be wrapped by the firstly melted aluminum liquid.
In the present invention, the ratio of the number of atoms of scandium and aluminum in the molten alloy liquid is preferably (33 to 45):
(55-67), more preferably (35-42): 58-65, and most preferably (35-40): 60-65.
In the present invention, the inert gas is preferably argon gas. The invention carries out arc melting under the protection of inert gas, effectively isolates the contact of aluminum, scandium and oxygen, and the obtained aluminum-scandium alloy has low cast oxygen content.
In the present invention, the degree of vacuum after the evacuation is preferably 3 × 10-3～4×10-3Pa, more preferably 3.2 × 10-3～3.8×10-3Pa, most preferablyIs 3.4 × 10-3～3.6×10-3Pa. in the invention, the preferable evacuation mode is staged evacuation, the staged evacuation preferably comprises 3-4 times of mechanical pump evacuation, and then the molecular pump evacuation is adopted until the pressure is 3 × 10-3～4×10-3Pa. In the present invention, the inert atmosphere is preferably argon or helium.
In the invention, the current of the arc melting is preferably 410-450A, more preferably 415-445A, and most preferably 420-440A; the time of the single arc melting is preferably 70-75 s independently, more preferably 71-74 s, and most preferably 72-73 s. In the present invention, the number of repetition of the arc melting is preferably 5 to 7 times, and more preferably 6 times. In the invention, after the electric arc melting is finished, the scandium and aluminum raw materials are turned over, and then the next electric arc melting is carried out; the flipping is preferably performed using a robot. The invention adopts the arc melting mode, can ensure that scandium and aluminum raw materials are completely melted, does not have alloy residues, and prevents the generation of inclusions.
In the present invention, the arc melting is preferably performed in a high vacuum arc melting furnace.
After the molten alloy liquid is obtained, the molten alloy liquid is condensed under the protection of inert gas to obtain the aluminum-scandium alloy cast ingot.
In the invention, the time for condensation is preferably 35-50 s, more preferably 32-48 s, and most preferably 35-45 s.
In the present invention, the inert atmosphere is preferably argon or helium. The aluminum-scandium alloy is condensed under the protection of inert gas, so that the contact of aluminum, scandium and oxygen is effectively isolated, and the content of the cast oxygen of the obtained aluminum-scandium alloy is low; and (3) rapidly cooling and solidifying in a water-cooled copper crucible, and the prepared aluminum-scandium alloy cast ingot is uniform in grain structure, granularity and microstructure.
In the invention, through repeated arc melting, the chemical components of the aluminum-scandium alloy can be uniform, and the segregation is further reduced; condensation is carried out in the water-cooled copper crucible, and the second phase (Al) in the solidification process can be prevented due to the high cooling speed of the water-cooled copper crucible3Sc) is precipitated and grown to form coarse dendrite, and a more uniform grain structure is obtained.
After the aluminum-scandium alloy ingot is obtained, the aluminum-scandium alloy ingot is sequentially subjected to electromagnetic stirring and repeated thermal mechanical treatment to obtain an aluminum-scandium alloy target blank.
In the invention, the current of the electromagnetic stirring is preferably 330-340A, more preferably 332-338A, and most preferably 334-336A; the electromagnetic stirring time is preferably 1-2 min, and more preferably 1-1.5 min. In the present invention, the container used for the electromagnetic stirring is preferably a flat bottom tank.
In the present invention, the thermo-mechanical treatment is preferably forging or rolling; the temperature of the thermal mechanical treatment is preferably 900-1050 ℃, and more preferably 950-1000 ℃; the time of the single thermal mechanical treatment is preferably 2-4 min independently, and more preferably 3-4 min. In the present invention, the number of repetitions of the thermal mechanical treatment is preferably 3 to 4, and more preferably 3. In the invention, the deformation rate of the aluminum-scandium alloy ingot in the single thermal mechanical treatment process is preferably 25-30%, more preferably 26-29%, and most preferably 27-28%. In the invention, the electromagnetic stirring and thermal mechanical treatment process can effectively eliminate the defects of segregation and the like, so that the microstructure is finer and more uniform.
After the thermal mechanical treatment is repeated, the method preferably further comprises the step of sequentially carrying out ultrasonic nondestructive inspection, average grain size detection and oxygen content detection on the obtained aluminum-scandium alloy target blank. In the invention, the measurement result shows that the target blank has no defects such as cracks and the like, the grain size is about 50 mu m, and the oxygen content is less than 400ppm, which meets the requirement, and then the subsequent steps are carried out.
In the invention, the ultrasonic inspection is preferably carried out by using an ultrasonic C-type flaw detector, the target blank is qualified as the target blank has no defects such as cracks, pores and the like, and then the subsequent steps are carried out; the ultrasonic wave propagates in the medium as a longitudinal wave; the medium is preferably deionized water. In the invention, the oxygen content detection is preferably carried out by using an oxygen-nitrogen analyzer; the operation of the oxygen content detection in the present invention is not particularly limited, and the operation of measuring the oxygen content by an oxygen-nitrogen analyzer, which is well known to those skilled in the art, may be employed.
The invention provides the aluminum-scandium alloy target blank prepared by the preparation method in the technical scheme, wherein the oxygen content of the aluminum-scandium alloy target blank is less than 200ppm, and the density is more than or equal to 97%.
In the invention, the average grain size of the aluminum-scandium alloy target blank is preferably 45-55 μm, the oxygen content is preferably less than 200ppm, the compactness is preferably more than or equal to 97%, the microstructure is uniform, and the target blank is high in compactness.
The invention also provides application of the aluminum-scandium alloy target blank in the technical scheme in preparation of an ScAlN thin film or as an aluminum-scandium alloy sputtering target material of an FBAR/BAW device.
The technical solution of the present invention will be clearly and completely described below with reference to the embodiments of the present invention. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
The aluminum-scandium alloy target blank is prepared according to the process flow shown in fig. 3, and the specific steps are as follows:
(1) dipping aluminum (with the purity of 99.999%) in ethyl acetate by absorbent cotton for wiping, then washing by concentrated sulfuric acid (with the mass percentage of 95%), washing by water to remove residual sulfuric acid solution and metal ions, and then placing in a vacuum drying oven for drying at 25 ℃; drying scandium (with purity of 99.99%) at 25 deg.C in a vacuum drying oven; aluminum: scandium 65 at%: 35 at%, and the total mass was 150 g.
(2) Placing the treated aluminum at the bottom layer of a water-cooled copper crucible in a high-vacuum electric arc melting furnace, placing the treated scandium on the surface of the aluminum, sealing the furnace body of the high-vacuum electric arc melting furnace by using vacuum grease, firstly vacuumizing for 4 times by using a mechanical pump, and then vacuumizing to the pressure of 3.4 × 10 by using a molecular pump-3Pa, then filling high-purity argon to the pressure of-0.05 MPa, adjusting the position of an electric arc, then carrying out electric arc melting, wherein the current follows the electric arc in the melting processAnd (4) the electrode is raised step by step (the current of the arc melting is increased from 0A to 420A, timing is started, the time of single arc melting is 75s independently), the aluminum and scandium raw materials are overturned by a manipulator after the melting is finished, the arc melting is repeated for 5 times, and then the aluminum and scandium raw materials are condensed for 40s, so that the aluminum-scandium alloy ingot is obtained.
(3) And (2) moving the aluminum-scandium alloy ingot into a flat-bottom groove by using a mechanical handle, increasing the current from 0A to 330A, then electromagnetically stirring for 1min, then carrying out ingot rolling at 950 ℃ for 3min, and repeating the ingot rolling for 3 times (the deformation rate of single ingot rolling is 25%), thereby obtaining an aluminum-scandium alloy target blank (the average size of grains is 45 mu m, the oxygen content is 190ppm, the microstructure is uniform, and the compactness of the target is more than 97%).
Example 2
An aluminum scandium alloy target blank was prepared according to the method of example 1, which differs from example 1 in that:
in step (1), acetone was used instead of ethyl acetate, scandium: aluminum ═ 40 at%: 60 at%;
in the step (2), the maximum current of the arc melting is 430A, the time of single arc melting is independently 70s, and the condensation time is 45 s;
in the step (3), the current of electromagnetic stirring is 335A, and the deformation rate of single ingot casting rolling is 27%; the aluminum scandium alloy target blank (the average grain size is 48 μm, the oxygen content is 195ppm, the microstructure is uniform, and the compactness of the target material is more than 97%).
Example 3
An aluminum scandium alloy target blank was prepared according to the method of example 1, which differs from example 1 in that:
in step (1), scandium: aluminum ═ 40 at%: 60 at%;
in the step (2), the maximum current of the arc melting is 440A, the time of single arc melting is 75s independently, and the condensation time is 40 s;
in the step (3), the current of electromagnetic stirring is 340A; the deformation rate of single ingot casting rolling is 230 percent; the aluminum scandium alloy target blank (the average grain size is 55 μm, the oxygen content is 190ppm, the microstructure is uniform, and the compactness of the target material is more than 97%).
Fig. 4 is a scanning electron microscopic total spectrogram of the aluminum-scandium alloy target blank prepared in example 1, in which (a) is a scanning area micro-microstructure image, (b) is an Al element distribution image, (c) is an Sc element distribution image, and (d) is an O element distribution image. Fig. 5 shows the microstructure of the aluminum-scandium alloy target blanks prepared in examples 1 to 3, in which (a) is example 1, (b) is example 2, and (c) is example 3. As can be seen from FIGS. 4 to 5, the aluminum-scandium alloy target blank prepared by the method has the advantages of fine microstructure, uniform chemical composition and no obvious defect.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. The preparation method of the aluminum-scandium alloy target blank is characterized by comprising the following steps of:
placing an aluminum source and a scandium source in a water-cooled copper crucible, vacuumizing, filling inert gas, and repeatedly performing arc melting to obtain molten alloy liquid;
condensing the molten alloy liquid under the protection of inert gas to obtain an aluminum-scandium alloy cast ingot;
and sequentially carrying out electromagnetic stirring and repeated thermal mechanical treatment on the aluminum-scandium alloy cast ingot to obtain an aluminum-scandium alloy target blank.
2. The method according to claim 1, wherein the degree of vacuum after the evacuation is 3 × 10-3～4×10-3Pa; the current of arc melting is 410-450A, and the time of single arc melting is independently 70-75 s.
3. The production method according to claim 1 or 2, wherein the number of repetitions of the arc melting is 5 to 7.
4. The preparation method according to claim 1, wherein the electromagnetic stirring is carried out at a current of 330-340A for 1-2 min.
5. The method according to claim 1, characterized in that the thermomechanical treatment is forging or rolling; the temperature of the thermal mechanical treatment is 900-1050 ℃, and the time of single thermal mechanical treatment is independently 2-4 min.
6. The preparation method of claim 5, wherein the deformation rate of the aluminum-scandium alloy ingot in the single thermomechanical treatment process is 25-30%.
7. A production method according to claim 1 or 5, wherein a ratio of the number of atoms of scandium and aluminum in the molten alloy liquid is (33 to 45): (55-67).
8. The preparation method according to claim 1, wherein the purity of the aluminum is more than or equal to 99.999%; the purity of the scandium is more than or equal to 99.99%.
9. The aluminum-scandium alloy target blank prepared by the preparation method of any one of claims 1 to 8, wherein the oxygen content of the aluminum-scandium alloy target blank is less than 200ppm, and the compactness is more than or equal to 97%.
10. Use of the aluminum scandium alloy target blank of claim 9 in the preparation of an ScAlN film or as an aluminum scandium alloy sputtering target for FBAR/BAW devices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010497464.3A CN111500992A (en) | 2020-06-03 | 2020-06-03 | Aluminum-scandium alloy target blank and preparation method and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010497464.3A CN111500992A (en) | 2020-06-03 | 2020-06-03 | Aluminum-scandium alloy target blank and preparation method and application thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111500992A true CN111500992A (en) | 2020-08-07 |
Family
ID=71870546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010497464.3A Pending CN111500992A (en) | 2020-06-03 | 2020-06-03 | Aluminum-scandium alloy target blank and preparation method and application thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111500992A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112063978A (en) * | 2020-09-21 | 2020-12-11 | 长沙神弧离子镀膜有限公司 | Preparation method of high scandium content aluminum-scandium alloy target material and target material backing material |
| CN112063866A (en) * | 2020-09-16 | 2020-12-11 | 湖南稀土金属材料研究院 | Method for preparing aluminum-scandium alloy with high scandium content |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020082412A (en) * | 2001-04-20 | 2002-10-31 | 미쓰이 긴조꾸 고교 가부시키가이샤 | Method for Manufacturing Aluminum-based Alloy Target Material and Aluminum- based Alloy Material Target Obtained through the Method |
| CN104233142A (en) * | 2013-06-13 | 2014-12-24 | 无锡市森信精密机械厂 | Preparation method for V-5Cr-5Ti rolled sheet |
| CN107326225A (en) * | 2016-04-29 | 2017-11-07 | 宁波江丰电子材料股份有限公司 | Aluminium alloy and preparation method thereof, target material assembly and its manufacture method |
| KR101817075B1 (en) * | 2016-09-21 | 2018-01-11 | 재단법인 포항산업과학연구원 | Aluminium-scandium master alloys, and manufacturing method thereof |
| CN107841639A (en) * | 2017-12-11 | 2018-03-27 | 基迈克材料科技（苏州）有限公司 | Aluminium-scandium alloy target blankss and preparation method and application |
| CN109252142A (en) * | 2018-09-29 | 2019-01-22 | 有研新材料股份有限公司 | A kind of aluminium-scandium alloy target blankss and its preparation method and application |
-
2020
- 2020-06-03 CN CN202010497464.3A patent/CN111500992A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020082412A (en) * | 2001-04-20 | 2002-10-31 | 미쓰이 긴조꾸 고교 가부시키가이샤 | Method for Manufacturing Aluminum-based Alloy Target Material and Aluminum- based Alloy Material Target Obtained through the Method |
| CN104233142A (en) * | 2013-06-13 | 2014-12-24 | 无锡市森信精密机械厂 | Preparation method for V-5Cr-5Ti rolled sheet |
| CN107326225A (en) * | 2016-04-29 | 2017-11-07 | 宁波江丰电子材料股份有限公司 | Aluminium alloy and preparation method thereof, target material assembly and its manufacture method |
| KR101817075B1 (en) * | 2016-09-21 | 2018-01-11 | 재단법인 포항산업과학연구원 | Aluminium-scandium master alloys, and manufacturing method thereof |
| CN107841639A (en) * | 2017-12-11 | 2018-03-27 | 基迈克材料科技（苏州）有限公司 | Aluminium-scandium alloy target blankss and preparation method and application |
| CN109252142A (en) * | 2018-09-29 | 2019-01-22 | 有研新材料股份有限公司 | A kind of aluminium-scandium alloy target blankss and its preparation method and application |
Non-Patent Citations (2)
| Title |
|---|
| 朱云等: "《冶金设备（第2版）》", 30 September 2013, 冶金工业出版社 * |
| 薛正良等: "《特种熔炼》", 31 October 2018, 冶金工业出版社 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112063866A (en) * | 2020-09-16 | 2020-12-11 | 湖南稀土金属材料研究院 | Method for preparing aluminum-scandium alloy with high scandium content |
| CN112063978A (en) * | 2020-09-21 | 2020-12-11 | 长沙神弧离子镀膜有限公司 | Preparation method of high scandium content aluminum-scandium alloy target material and target material backing material |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111500992A (en) | Aluminum-scandium alloy target blank and preparation method and application thereof | |
| CN103132033B (en) | A kind of method preparing molybdenum target | |
| JP5457454B2 (en) | Cu-In-Ga-Se sputtering target and manufacturing method thereof | |
| CN111636054A (en) | Preparation method of aluminum-scandium alloy sputtering target material | |
| JP2011523978A (en) | Molybdenum-niobium alloy, sputtering target containing such alloy, method for producing such target, thin film produced therefrom, and use thereof | |
| CN102069189A (en) | Powder metallurgy method for preparing high-purity materials | |
| CN113652593A (en) | MoxNbTayTiV high-entropy alloy and preparation method thereof | |
| CN103917688B (en) | Sputtering target material and manufacture method thereof | |
| JP6037211B2 (en) | Manufacturing method of MoTi target material | |
| CN115261806B (en) | Nickel-aluminum alloy sputtering target material and hot isostatic pressing preparation method thereof | |
| CN112111714A (en) | Preparation method of tantalum-aluminum alloy sputtering target material | |
| JP2002338354A (en) | Niobium oxide sintered compact, its manufacturing method and sputtering target using the same | |
| JP2001295035A (en) | Sputtering target and its manufacturing method | |
| CN114934261A (en) | Iron target, iron-nickel alloy target, and method for producing same | |
| CN108893655A (en) | A kind of high-strength corrosion-resistant erosion titanium alloy and preparation method thereof | |
| EP3279366B1 (en) | Cu-ga alloy sputtering target and method of manufacturing cu-ga alloy sputtering target | |
| CN111593216A (en) | Aluminum-scandium alloy target material, preparation method and application thereof, and vacuum consumable arc furnace | |
| CN105177511B (en) | A kind of negative thermal expansion material Sc2Mo3O12The preparation method of film | |
| EP3412795B1 (en) | Method of manufacturing cu-ga alloy sputtering target | |
| JPH05222525A (en) | Production of tungsten target for semiconductor | |
| JP2000247728A (en) | Alumina ceramic sintered compact having excellent corrosion resistance | |
| JP2000185968A (en) | Electroconductive metal oxide sintered compact and its use | |
| JP2000256842A (en) | Ito sputtering target, and production of ito sintered compact and transparent conductive film | |
| CN110396603B (en) | Remelting method of iron-aluminum alloy | |
| WO2019194275A1 (en) | Cu-Ga ALLOY SPUTTERING TARGET |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200807 |
|
| RJ01 | Rejection of invention patent application after publication |