CN111486972A - Infrared focal plane array and infrared sensor reading circuit - Google Patents

Infrared focal plane array and infrared sensor reading circuit Download PDF

Info

Publication number
CN111486972A
CN111486972A CN202010494965.6A CN202010494965A CN111486972A CN 111486972 A CN111486972 A CN 111486972A CN 202010494965 A CN202010494965 A CN 202010494965A CN 111486972 A CN111486972 A CN 111486972A
Authority
CN
China
Prior art keywords
transistor
sensor
hysteresis comparator
infrared
integrating capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202010494965.6A
Other languages
Chinese (zh)
Other versions
CN111486972B (en
Inventor
李聪科
谢法彪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Ruixin Microsystem Technology Co ltd
Original Assignee
Suzhou Ruixin Microsystem Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Ruixin Microsystem Technology Co ltd filed Critical Suzhou Ruixin Microsystem Technology Co ltd
Priority to CN202010494965.6A priority Critical patent/CN111486972B/en
Publication of CN111486972A publication Critical patent/CN111486972A/en
Application granted granted Critical
Publication of CN111486972B publication Critical patent/CN111486972B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G01J5/22—Electrical features thereof
    • G01J5/24—Use of specially adapted circuits, e.g. bridge circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J2005/0077—Imaging
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G01J2005/202—Arrays

Abstract

The application discloses an infrared sensor reading circuit which comprises a first transistor, a second transistor, a sensor, an integrating capacitor and a hysteresis comparator; the source electrode of the first transistor is connected with a power supply, the drain electrode of the first transistor is connected with the first end of the sensor, and the grid electrode of the first transistor is connected with the output end of the hysteresis comparator; the source electrode of the second transistor is grounded, the drain electrode of the second transistor is connected with the first end of the sensor, and the grid electrode of the second transistor is connected with the output end of the hysteresis comparator; the second end of the sensor is respectively connected with the first end of the integrating capacitor and the input end of the hysteresis comparator; the first end of the integrating capacitor is connected with the input end of the hysteresis comparator, and the second end of the integrating capacitor is grounded. The first transistor and the second transistor have a switching function, the resistance is far smaller than the resistance of the sensor, and only the sensor consumes energy, the energy utilization rate of the sensor is close to 100%, and the energy utilization rate is improved. The present application further provides an infrared focal plane array having the above advantages.

Description

Infrared focal plane array and infrared sensor reading circuit
Technical Field
The application relates to the technical field of infrared sensors, in particular to an infrared focal plane array and an infrared sensor reading circuit.
Background
The infrared imaging technology has important application in the fields of industry, electric power, medicine, environmental monitoring, security protection, forest fire prevention and the like. The infrared focal plane array of the core component of the infrared imaging system comprises an uncooled infrared focal plane detector and a reading circuit, wherein the reading circuit is used for converting, amplifying and transmitting a sensor signal.
A circuit diagram of an existing readout circuit is shown in fig. 1, and includes a resistor Ref, two MOS (metal oxide semiconductor, MOS for short) transistors, and a sensor, where a power supply is input from one end of the resistor Ref, the two MOS transistors are equivalent to a current source in the circuit, and a large amount of electric energy is consumed on the two MOS transistors and the resistor Ref, so that an energy utilization rate at the sensor is low, and is below 50%.
Therefore, it is an urgent technical problem to be solved by those skilled in the art how to improve the energy utilization of the readout circuit and further improve the signal-to-noise ratio.
Disclosure of Invention
The utility model aims at providing an infrared focal plane array and infrared sensor reading circuit to promote reading circuit's energy utilization, and then improve the SNR.
In order to solve the above technical problem, the present application provides an infrared sensor readout circuit, including a first transistor, a second transistor, a sensor, an integrating capacitor, and a hysteresis comparator;
the source electrode of the first transistor is connected with a power supply, the drain electrode of the first transistor is connected with the first end of the sensor, and the grid electrode of the first transistor is connected with the output end of the hysteresis comparator;
the source electrode of the second transistor is grounded, the drain electrode of the second transistor is connected with the first end of the sensor, and the grid electrode of the second transistor is connected with the output end of the hysteresis comparator;
the second end of the sensor is respectively connected with the first end of the integrating capacitor and the input end of the hysteresis comparator;
the first end of the integrating capacitor is connected with the input end of the hysteresis comparator, and the second end of the integrating capacitor is grounded.
Optionally, the first transistor is a P-type MOS transistor.
Optionally, the second transistor is an N-type MOS transistor.
Optionally, the sensor is a resistive sensor.
Optionally, the method further includes: and the counter is connected with the output end of the hysteresis comparator.
The application also provides an infrared focal plane array, which comprises an infrared focal plane detector and any one of the infrared sensor reading circuits.
The infrared sensor reading circuit comprises a first transistor, a second transistor, a sensor, an integrating capacitor and a hysteresis comparator; the source electrode of the first transistor is connected with a power supply, the drain electrode of the first transistor is connected with the first end of the sensor, and the grid electrode of the first transistor is connected with the output end of the hysteresis comparator; the source electrode of the second transistor is grounded, the drain electrode of the second transistor is connected with the first end of the sensor, and the grid electrode of the second transistor is connected with the output end of the hysteresis comparator; the second end of the sensor is respectively connected with the first end of the integrating capacitor and the input end of the hysteresis comparator; the first end of the integrating capacitor is connected with the input end of the hysteresis comparator, and the second end of the integrating capacitor is grounded.
In the infrared sensor reading circuit in this application, first transistor and second transistor play the effect of switch in the reading circuit of this application, and impedance is very little, and the resistance of first transistor and second transistor is less than the resistance of sensor far away, can regard as only the sensor as resistance energy consumption, also be close to 100% at the energy utilization who reads out the circuit in this application sensor, energy utilization obviously promotes, and then makes the SNR improve.
In addition, the application also provides an infrared focal plane array with the advantages.
Drawings
For a clearer explanation of the embodiments or technical solutions of the prior art of the present application, the drawings needed for the description of the embodiments or prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a circuit diagram of a prior art sensing circuit;
fig. 2 is a circuit diagram of a readout circuit of an infrared sensor according to an embodiment of the present disclosure;
fig. 3 is a timing diagram illustrating an operation of a readout circuit of an infrared sensor according to an embodiment of the present disclosure.
Detailed Description
In order that those skilled in the art will better understand the disclosure, the following detailed description will be given with reference to the accompanying drawings. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
As described in the background section, a large amount of power is consumed by the two MOS transistors and the resistor Ref in the conventional readout circuit, resulting in a low energy utilization rate at the sensor, which is below 50%.
The energy utilization rate in the existing reading circuit within the time Δ T is:
Figure BDA0002522443290000031
wherein, ηconFor the energy efficiency of the sensor, RsensorIs the resistance of the sensor, IsensorFor the current through the sensor, IsignaIs the current at the P-type MOS tube, IrefIs the current at the resistance Ref, RrefResistance being resistance of resistance Ref, VdsnAnd VdspOf N-type and P-type MOS transistors, respectivelyThe drain-source voltage. In general RsensoAnd RrefAlmost equal, Isigna<<IrefTherefore ηcon＜50％。
In view of the above, the present application provides an infrared sensor reading circuit, please refer to fig. 2 and fig. 3, in which fig. 2 is a circuit diagram of an infrared sensor reading circuit provided in an embodiment of the present application, and fig. 3 is a timing diagram of an operation of the infrared sensor reading circuit provided in the embodiment of the present application, the infrared sensor reading circuit includes:
the circuit comprises a first transistor 1, a second transistor 2, a sensor 3, an integrating capacitor 4 and a hysteresis comparator 5;
the source electrode of the first transistor 1 is connected with a power supply, the drain electrode of the first transistor 1 is connected with the first end of the sensor 3, and the grid electrode of the first transistor 1 is connected with the output end of the hysteresis comparator 5;
the source of the second transistor 2 is grounded, the drain of the second transistor 2 is connected to the first end of the sensor 3, and the gate of the second transistor 2 is connected to the output end of the hysteresis comparator 5;
the second end of the sensor 3 is respectively connected with the first end of the integrating capacitor 4 and the input end of the hysteresis comparator 5;
the first end of the integrating capacitor 4 is connected with the input end of the hysteresis comparator 5, and the second end of the integrating capacitor 4 is grounded.
The working process of the reading circuit in the application is as follows: the read circuit starts to operate, the first transistor 1 is turned on, the power supply current flows through the first transistor 1 and the sensor 3, the integrating capacitor 4 is charged, and when the voltage of the integrating capacitor 4 reaches the high threshold voltage V of the hysteresis comparator 5hWhen the voltage reaches the low threshold voltage V of the hysteresis comparator 5, the output signal of the hysteresis comparator 5 is inverted, the first transistor 1 is turned off, the second transistor 2 is turned on, the charge amount of the integrating capacitor 4 flows into the second transistor 2 through the sensor 3 and flows out to the ground through the source electrode of the second transistor 2 until the voltage on the integrating capacitor 4 reaches the low threshold voltage V of the hysteresis comparator 5lThe output signal of the hysteresis comparator 5 is inverted, the second transistor 2 is turned off, the first transistor 1 is turned on,the operation is repeated in a circulating way.
Preferably, the first transistor 1 is a P-type MOS transistor, and the second transistor 2 is an N-type MOS transistor. However, the present application is not limited to this, and in another embodiment of the present application, the first transistor and the second transistor may be gates formed of a plurality of MOS transistors.
Optionally, the readout circuit of the infrared sensor 3 further includes: and the counter 6 is connected with the output end of the hysteresis comparator 5. The counter 6 is used for counting the above cycle, and the counting size of the counter 6 can reflect the size of the resistance of the sensor 3. When the counter 6 is connected to the reading circuit, the signals detected in the subsequent pair of circuit diagrams are processed by the number of times.
Setting hysteresis comparator 5 from a low threshold voltage VlTo a high threshold voltage VhTime of (a) is T1From a high threshold voltage VhTo a low threshold voltage VlTime of (a) is T2The total time counted by the counter 6 is T0Then at T0The number counted by the counter 6 is:
n＝T0/(T1+T2) (2)
when the resistance of the sensor 3 is small, it takes a short time for the power supply current to flow through the sensor 3, i.e., T1And T2Small, total time T0If the value of n is fixed, the value of n is large, namely the counting times are large; when the resistance of the sensor 3 is large, it takes a long time for the power supply current to flow through the sensor 3, i.e., T1And T2Large total time T0Fixed, the value of n is small, i.e., the number of counts is small.
The voltage on the integrating capacitor 4 is firstly from the low threshold voltage VlTo a high threshold voltage VhThen from the high threshold voltage V againhTo a low threshold voltage VlFor one cycle, the ratio of the power consumption consumed by the sensor 3 to the entire power consumption is calculated below by taking one cycle as an example.
During one cycle, the total energy produced by the power supply is:
Wtotal＝Vdd*(Vh-Vl)*Cint (3)
in the formula, WtotalFor total energy, Vdd is the supply voltage and Cint is the integrating capacitor.
The power consumed by the sensor 3 is:
Figure BDA0002522443290000051
in the formula, WsenosPower consumption for the sensor, RsensorIs the resistance of the sensor, RonIs the resistance of the first transistor and the second transistor, RonMuch less than Rsenso。
Thus, the energy consumed by the sensor 3 in this application is in the ratio:
Figure BDA0002522443290000052
it can be seen that the energy ratio, that is, the energy efficiency ratio, that sensor 3 consumes in this application is close to 100%, for at least 2 times of the energy efficiency ratio in the current reading circuit, energy utilization promotes greatly, and under the same sensor 3 resistance and the same current, sensor 3 SNR also improves, and then promotes the definition of image.
Optionally, the sensor 3 is a resistive sensor.
In the 3 readout circuit of infrared sensor in this application, first transistor 1 and second transistor 2 play the effect of switch in the readout circuit of this application, impedance is very little, the resistance of first transistor 1 and second transistor 2 is less than sensor 3's resistance far away, can regard as only sensor 3 as resistance energy consumption, also be close to 100% in the readout circuit of this application energy utilization ratio of sensor 3, energy utilization ratio obviously promotes, and then make the SNR improve.
The application also provides an infrared focal plane array, which comprises the infrared focal plane detector and the infrared sensor reading circuit.
It should be noted that the type of the infrared focal plane detector is not specifically limited in this application, and for example, the infrared focal plane detector is an uncooled infrared focal plane detector or a cooled infrared focal plane detector.
The readout circuit in the infrared focal plane array provided by the embodiment comprises a first transistor, a second transistor, a sensor, an integrating capacitor and a hysteresis comparator; the source electrode of the first transistor is connected with a power supply, the drain electrode of the first transistor is connected with the first end of the sensor, and the grid electrode of the first transistor is connected with the output end of the hysteresis comparator; the source electrode of the second transistor is grounded, the drain electrode of the second transistor is connected with the first end of the sensor, and the grid electrode of the second transistor is connected with the output end of the hysteresis comparator; the second end of the sensor is respectively connected with the first end of the integrating capacitor and the input end of the hysteresis comparator; the first end of the integrating capacitor is connected with the input end of the hysteresis comparator, the second end of the integrating capacitor is grounded, almost all power consumption in the reading circuit is dissipated on the sensor, the energy efficiency ratio of the sensor is improved, the signal to noise ratio is further improved, and a clearer image can be obtained.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The infrared focal plane array and the infrared sensor reading circuit provided by the application are described in detail above. The principles and embodiments of the present application are explained herein using specific examples, which are provided only to help understand the method and the core idea of the present application. It should be noted that, for those skilled in the art, it is possible to make several improvements and modifications to the present application without departing from the principle of the present application, and such improvements and modifications also fall within the scope of the claims of the present application.

Claims (6)

1. The infrared sensor reading circuit is characterized by comprising a first transistor, a second transistor, a sensor, an integrating capacitor and a hysteresis comparator;
the source electrode of the first transistor is connected with a power supply, the drain electrode of the first transistor is connected with the first end of the sensor, and the grid electrode of the first transistor is connected with the output end of the hysteresis comparator;
the source electrode of the second transistor is grounded, the drain electrode of the second transistor is connected with the first end of the sensor, and the grid electrode of the second transistor is connected with the output end of the hysteresis comparator;
the second end of the sensor is respectively connected with the first end of the integrating capacitor and the input end of the hysteresis comparator;
the first end of the integrating capacitor is connected with the input end of the hysteresis comparator, and the second end of the integrating capacitor is grounded.
2. The infrared sensor readout circuit of claim 1 wherein said first transistor is a P-type MOS transistor.
3. The infrared sensor readout circuit of claim 1 wherein the second transistor is an N-type MOS transistor.
4. The infrared sensor readout circuit of claim 1 wherein said sensor is a resistive sensor.
5. The infrared sensor readout circuit of claim 1, further comprising: and the counter is connected with the output end of the hysteresis comparator.
6. An infrared focal plane array comprising an infrared focal plane detector and an infrared sensor readout circuit as claimed in any one of claims 1 to 5.
CN202010494965.6A 2020-06-03 2020-06-03 Infrared focal plane array and infrared sensor reading circuit Active CN111486972B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010494965.6A CN111486972B (en) 2020-06-03 2020-06-03 Infrared focal plane array and infrared sensor reading circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010494965.6A CN111486972B (en) 2020-06-03 2020-06-03 Infrared focal plane array and infrared sensor reading circuit

Publications (2)

Publication Number Publication Date
CN111486972A true CN111486972A (en) 2020-08-04
CN111486972B CN111486972B (en) 2021-04-16

Family

ID=71813504

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010494965.6A Active CN111486972B (en) 2020-06-03 2020-06-03 Infrared focal plane array and infrared sensor reading circuit

Country Status (1)

Country Link
CN (1) CN111486972B (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2737299B2 (en) * 1989-09-16 1998-04-08 株式会社明電舎 Active filter for power
US8836366B2 (en) * 2011-10-07 2014-09-16 Apple Inc. Method for testing integrated circuits with hysteresis
CN104698405A (en) * 2013-12-05 2015-06-10 中国科学院上海微系统与信息技术研究所 Readout circuit and two-level SQUI (superconducting quantum interference) sensor with same
CN107515050A (en) * 2017-08-15 2017-12-26 电子科技大学 A kind of infrared focal plane read-out circuit
CN110133708A (en) * 2019-04-24 2019-08-16 中国科学技术大学 A kind of measuring device and measuring method of core pulse signal

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2737299B2 (en) * 1989-09-16 1998-04-08 株式会社明電舎 Active filter for power
US8836366B2 (en) * 2011-10-07 2014-09-16 Apple Inc. Method for testing integrated circuits with hysteresis
CN104698405A (en) * 2013-12-05 2015-06-10 中国科学院上海微系统与信息技术研究所 Readout circuit and two-level SQUI (superconducting quantum interference) sensor with same
CN107515050A (en) * 2017-08-15 2017-12-26 电子科技大学 A kind of infrared focal plane read-out circuit
CN110133708A (en) * 2019-04-24 2019-08-16 中国科学技术大学 A kind of measuring device and measuring method of core pulse signal

Also Published As

Publication number Publication date
CN111486972B (en) 2021-04-16

Similar Documents

Publication Publication Date Title
US7202463B1 (en) Higher dynamic range image sensor with signal integration
CN102538988B (en) Quenching and reading circuit for single photon avalanche diode imaging device
CN107271036B (en) The free-running operation single-photon detection system that high speed is quenched and restores
CN106656166B (en) High-count-range analog counting circuit applied to SPAD detector
WO2020257959A1 (en) Glitch signal detection circuit, security chip, and electronic apparatus
CN110278397B (en) Low-power-consumption column circuit for CMOS image sensor
JP2012235265A (en) Image sensor and driving method of the same
CN103475352A (en) Detection circuit of capacitor touch key
TWI222321B (en) Analog-to-digital converter for image sensor
CN109238462B (en) Photon detection method and device
CN111486972B (en) Infrared focal plane array and infrared sensor reading circuit
CN201780166U (en) Reading circuit of infrared detector
CN109031925A (en) M- analog conversion circuit when a kind of compact applied to single-photon detector
CN106374926A (en) High-speed multi-phase slope type analog-digital converter
CN106056052B (en) A kind of fingerprint collecting circuit
CN208818364U (en) Temperature measuring circuit
US20190003883A1 (en) Light Intensity Detection Circuit, Light Intensity Detector, Detection Method Thereof and Display Device
CN102013874B (en) An amplifier output amplitude detection circuit
CN110007127B (en) Voltage detection circuit
CN111366259B (en) Reconfigurable all-digital temperature sensor and temperature measurement method
CN107024287A (en) A kind of gating circuit applied to single-photon detector
CN108955930A (en) temperature measuring circuit
CN109085412B (en) Reverse current detection circuit
CN205283099U (en) Servo motor undervoltage protection device
CN105547498B (en) Inhibit the single photon counting circuit of dark counting and its inhibits the method for dark counting

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant