CN111465494A - 柔性传导装置 - Google Patents

柔性传导装置 Download PDF

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CN111465494A
CN111465494A CN201880076475.5A CN201880076475A CN111465494A CN 111465494 A CN111465494 A CN 111465494A CN 201880076475 A CN201880076475 A CN 201880076475A CN 111465494 A CN111465494 A CN 111465494A
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substrate
layer
polymer matrix
parylene
flexible device
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阿蒂夫·赛义德
恩里科·马斯特罗保罗
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Wozano Ltd
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Abstract

一种柔性传导或电子装置，其包括聚合物基体、聚对二甲苯层和传导层，所述聚对二甲苯层通过第一粘合剂层与所述聚合物基体结合，所述传导层通过第二粘合剂层与所述聚对二甲苯层结合。

Description

柔性传导装置
技术领域
本发明总体上涉及柔性传导和电子装置领域，涉及用于制造柔性传导和电子装置的基底、其用作力传感器的用途以及制造方法。
背景技术
柔性电子装置领域得到了长足的发展，但仍然存在一些重大困难，特别是在开发可适形的柔性传导装置方面，例如用于软体机器人应用的传感器。
在适合于柔性应用的聚合物基体上设置有传导层或图案化的传导层的器件容易发生器件挠曲破裂或热膨胀和收缩。这导致寿命短和/或功能不一致。
本发明要解决的问题
需要改进柔性且可适形的传导装置，例如以用作力传感器。
本发明的目的是提供一种耐用且有效的用于制造柔性传导装置的基底。
本发明的目的是提供一种柔性传导装置，其具有长寿命并且在正常使用期间不会被不可修复地损坏。
发明内容
根据本发明的第一方面，提供了一种柔性传导或电子装置，其包括聚合物基体、聚对二甲苯层和传导层，所述聚对二甲苯层通过第一粘合剂层与所述聚合物基体结合，所述传导层通过第二粘合剂层与所述聚对二甲苯层结合。
本发明的第二方面提供了一种用于制造柔性传导或电子器件的基底，所述基底包括聚合物基体和通过第一粘合剂层与所述聚合物基体结合的聚对二甲苯层。
发明的优点
本发明的传导装置提供了柔性且均匀可适形的基底和传导性的、通常是图案化的层，用于功能用途，例如坚固的力传感器，能够经受挠曲和热膨胀，并且可以结合到其他基底中使用。
附图的简要说明
图1是
具体实施方式
本发明提供了一种改进的柔性传导或电子装置以及用于制造这种装置的基底。根据一个方面的基底包括聚合物基体和通过第一粘合剂层与所述聚合物基体结合的聚对二甲苯层。优选地，在聚对二甲苯层上与聚合物基体结合的一侧的相对侧上设置有第二粘合剂层。根据另一方面的柔性传导装置包括上面的基底，其具有设置在其上并通过第二粘合剂层与其结合的传导层(例如，图案化的传导层)。
优选地，装置和基底是可适形的。
聚合物基体可以是任何合适的基体，并且可以包含PDMS、PI、聚丁酸酯、PMMA、丙烯酸酯、聚乙烯、HDPE、LDPE、PET、TPU、聚氨酯、PVC、PEI、PEN、PP、聚苯乙烯、脂族或半芳族聚酰胺、PTFE、PVDF或其混合物中的一种或多种。
聚合物基体优选包括且更优选为杨氏模量至多为1.5MPa的聚合物，更优选地杨氏模量至多为1.2MPa，更优选地至多为1MPa，优选为至少500kPa，例如在700kPa至1MPa的范围内，例如700至800kPa。
优选地，聚合物基体包括或者是PDMS和/或PI(聚酰亚胺)，更优选PDMS(聚二甲基硅氧烷)。
聚合物基体可以具有任何合适的厚度，但是优选为足够薄以实现期望的柔韧性或可适形性。优选地，聚合物基体的厚度至多为1mm，更优选为50至500μm，还更优选为60至250μm，例如为75至175μm。
第一粘合剂层和第二粘合剂层可各自为任何合适的粘合剂，优选为分子结合粘合剂。这可以是点击化学结合材料。优选地，第一和/或第二粘合剂层包含硫醇，更优选包含巯基硅烷，还更优选包含或者是(3-巯基丙基)三甲氧基硅烷。
第一粘合剂层和/或第二粘合剂层优选具有至多10nm的厚度，并且优选是单层，在(3-巯基丙基)三甲氧基硅烷的情况下其可以是自组装的。
优选地，聚对二甲苯层是派瑞林层，更优选派瑞林-C层。
聚对二甲苯层的厚度优选在10nm至10μm的范围内。它可以包括单层聚对二甲苯或结合在一起的多个双层或更多层聚对二甲苯，例如，20至100nm的三层，由粘合剂(例如上述硫醇粘合剂)结合。优选地，聚对二甲苯层的厚度在50nm至500nm的范围内。
在本发明的传导装置中，传导层可以包括石墨烯、石墨、金属氧化物、金属合金或金属，优选根据需要对其进行图案化(例如，通过丝网印刷、光刻或阴影掩膜应用技术)。
传导层优选包括选自锌、铝、铜、金、银、铂、铬、钨和钛中的一种或多种的金属。更优选地，传导层包括金。
传导层的厚度为20nm至250nm，优选为50nm至100nm。
本文所述的基底和装置可以通过本领域已知的任何合适的方法来制造。
本发明已经参考优选实施例进行了描述。但是应当理解，在不脱离本发明范围的情况下，本领域普通技术人员可以进行变化和修改。

Claims (46)

1.一种柔性传导或电子装置，包括：
聚合物基体，
聚对二甲苯层，所述聚对二甲苯层通过第一粘合剂层与所述聚合物基体结合；和
传导层，所述传导层通过第二粘合剂层与所述聚对二甲苯层结合。
2.根据权利要求1所述的柔性装置，其是可适形的装置。
3.根据权利要求1或2所述的柔性装置，其中所述聚合物基体包括PDMS、PI、聚丁酸酯、PMMA、丙烯酸酯、聚乙烯、HDPE、LDPE、PET、TPU、聚氨酯、PVC、PEI、PEN、PP、聚苯乙烯、脂族或半芳族聚酰胺、PTFE、PVDF或其混合物中的一种或多种。
4.根据权利要求1至3中任一项所述的柔性装置，其中所述聚合物基体包括杨氏模量至多为1.5MPa的聚合物。
5.根据权利要求1至4中任一项所述的柔性装置，其中所述聚合物基体具有至多1.5MPa的杨氏模量。
6.根据前述权利要求中任一项所述的柔性装置，其中所述聚合物基体包括PDMS和/或PI。
7.根据前述权利要求中任一项所述的柔性装置，其中所述聚合物基体包括PDMS。
8.根据前述权利要求中任一项所述的柔性装置，其中所述聚合物基体的厚度至多为1mm。
9.根据权利要求8所述的柔性装置，其中所述聚合物基体的厚度为50至500μm。
10.根据权利要求9所述的柔性装置，其中所述聚合物基体的厚度为60至250μm。
11.根据权利要求10所述的柔性装置，其中所述聚合物基体的厚度为75至175μm。
12.根据前述权利要求中任一项所述的柔性装置，其中所述第一粘合剂层和/或所述第二粘合剂层包括硫醇。
13.根据权利要求12所述的柔性装置，其中所述第一粘合剂层和/或所述第二粘合剂层包括巯基硅烷。
14.根据权利要求13所述的柔性装置，其中所述第一粘合剂层和/或所述第二粘合剂层包括(3-巯基丙基)三甲氧基硅烷。
15.根据权利要求12至14中任一项所述的柔性装置，其中所述第一粘合剂层和/或所述第二粘合剂层的厚度至多为10nm。
16.根据前述权利要求中任一项所述的柔性装置，其中所述聚对二甲苯层是派瑞林层。
17.根据权利要求17所述的柔性装置，其中所述聚对二甲苯层是派瑞林-C层。
18.根据前述权利要求中任一项所述的柔性装置，其中所述聚对二甲苯层的厚度在10nm至10μm的范围内。
19.根据权利要求18所述的柔性装置，其中所述聚对二甲苯层包括单层聚对二甲苯或结合在一起的多个双层或更多层聚对二甲苯。
20.根据前述权利要求中任一项所述的柔性装置，其中所述聚对二甲苯层的厚度在50nm至500nm的范围内。
21.根据前述权利要求中任一项所述的柔性装置，其中所述传导层包括石墨烯、石墨、金属氧化物、金属合金或金属。
22.根据权利要求21所述的柔性器件，其中所述传导层包括选自锌、铝、铜、金、银、铂、铬、钨和钛中的一种或多种的金属。
23.根据权利要求22所述的柔性器件，其中所述传导层包括金。
24.根据前述权利要求中任一项所述的柔性装置，其中所述传导层的厚度为20nm至250nm，优选地为50nm至100nm。
25.一种用于制造柔性传导或电子装置的基底，所述基底包括：
聚合物基体，和
聚对二甲苯层，所述聚对二甲苯层通过第一粘合剂层与所述聚合物基体结合。
26.根据权利要求25所述的基底，其进一步包括设置在所述聚对二甲苯层上的第二粘合剂层。
27.根据权利要求25或权利要求26所述的基底，其中所述基底用于通过阴影掩模沉积光刻法沉积金属或金属氧化物层来制造柔性传导或电子器件。
28.根据权利要求25至27中任一项所述的基底，其是可适形的基底。
29.根据权利要求25至28中任一项所述的基底，其中所述聚合物基体包括PDMS、PI、聚丁酸酯、PMMA、丙烯酸酯、聚乙烯、HDPE、LDPE、PET、TPU、聚氨酯、PVC、PEI、PEN、PP、聚苯乙烯、脂族或半芳族聚酰胺、PTFE、PVDF或其混合物中的一种或多种。
30.根据权利要求25至29中任一项所述的基底，其中所述聚合物基体包括杨氏模量至多为1.5MPa的聚合物。
31.根据权利要求25至30中任一项所述的基底，其中所述聚合物基体具有至多1.5MPa的杨氏模量。
32.根据权利要求25至31中任一项所述的基底，其中所述聚合物基体包括PDMS和/或PI。
33.根据权利要求25至32中任一项所述的基底，其中所述聚合物基体包括PDMS。
34.根据权利要求25至33中任一项所述的基底，其中所述聚合物基体的厚度至多为1mm。
35.根据权利要求34所述的基底，其中所述聚合物基体的厚度为50至500μm。
36.根据权利要求35所述的基底，其中所述聚合物基体的厚度为60至250μm。
37.根据权利要求36所述的基底，其中所述聚合物基体的厚度为75至175μm。
38.根据权利要求25至37中任一项所述的基底，其中所述第一粘合剂层和/或所述第二粘合剂层包括硫醇。
39.根据权利要求38所述的基底，其中所述第一粘合剂层和/或所述第二粘合剂层包括巯基硅烷。
40.根据权利要求39所述的基底，其中所述第一粘合剂层和/或所述第二粘合剂层包括(3-巯基丙基)三甲氧基硅烷。
41.根据权利要求38至40中任一项所述的基底，其中所述第一粘合剂层和/或所述第二粘合剂层的厚度至多为10nm。
42.根据权利要求25至41中任一项所述的基底，其中所述聚对二甲苯层是派瑞林层。
43.根据权利要求42所述的基底，其中所述聚对二甲苯层是派瑞林-C层。
44.根据权利要求25至43中任一项所述的基底，其中所述聚对二甲苯层的厚度在10nm至10μm的范围内。
45.根据权利要求44所述的基底，其中所述聚对二甲苯层包括单层聚对二甲苯或结合在一起的多个双层或更多层聚对二甲苯。
46.根据前述权利要求中任一项所述的基底，其中所述聚对二甲苯层的厚度在50nm至500nm的范围内。
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