CN111463198A - COB packaging structure of UVC-L ED and manufacturing method thereof - Google Patents
COB packaging structure of UVC-L ED and manufacturing method thereof Download PDFInfo
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- CN111463198A CN111463198A CN202010438722.0A CN202010438722A CN111463198A CN 111463198 A CN111463198 A CN 111463198A CN 202010438722 A CN202010438722 A CN 202010438722A CN 111463198 A CN111463198 A CN 111463198A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a UVC-L ED COB packaging structure and a manufacturing method thereof, wherein the UVC-L ED COB packaging structure comprises a ceramic circuit board, a ceramic dam, a transparent cover plate, a UVC-L ED chip, a ceramic insulation plate and a reflection laminate plate, the UVC-L ED COB packaging structure is ingenious and reasonable in structural design, light emitted by the UVC-L ED chip is reflected out of the transparent cover plate through a reflection coating of a flared hole, the directivity of the light is effectively improved, the light emitting efficiency of a COB light source is greatly improved, the performance of the ceramic insulation plate is stable compared with that of insulation glue, the risk of short circuit caused by aging is avoided, the safety is high, a metal protection layer is plated at the viscose part of the transparent cover plate to prevent the insulation glue from being aged by the irradiation of the UVC light, and the service life is prolonged.
Description
Technical Field
The invention relates to the technical field of L ED, in particular to a COB packaging structure of UVC-L ED and a manufacturing method thereof.
Background
The UVC ultraviolet ray has short wavelength (200-280nm) and high energy, can destroy molecular structures in cells of microbial organisms (pathogens such as bacteria and viruses), such as DNA (deoxyribonucleic acid), RNA (ribonucleic acid) and the like in a short time, so that the microbial organisms die immediately or cannot reproduce offspring, and realize efficient and rapid broad-spectrum sterilization effects.
Because the light emitted by the COB light source towards the substrate direction can be strongly absorbed by the substrate, in order to further improve the light output power density of the COB light source of the UVC-L ED, technicians adopt a method for preparing a reflector structure on the substrate to reflect the part of light.
Chinese patent publication No. CN110223972A entitled "flip chip COB light source with reflector structure and method for making the same" discloses a flip chip COB light source with reflector structure and method for making the same, wherein insulating transparent glue is poured on a chip-soldered COB substrate for curing, and a high-reflection metal layer is plated to improve the reflectivity of the bottom of the COB substrate. However, the insulating transparent adhesive tape may have a risk of aging after the COB light source works for a long time, which may cause a short circuit between the high-reflection metal layer and the substrate circuit.
Chinese patent publication No. CN206076228U, entitled "new structure COB package structure", discloses a new structure COB package structure, in which a plurality of L ED chips are fixed on a plate coated with reflective white glue to improve heat dissipation and reduce light attenuation, but L ED chips and edges L ED chips and conductive circuit layers are electrically connected by bonding wires, which is costly for bonding wires, and the reflective white glue also has a risk of short circuit caused by aging.
Disclosure of Invention
In view of the above disadvantages, an object of the present invention is to provide a COB package structure with smart and reasonable structure, effectively improved light extraction efficiency, and stability and reliability of UVC-L ED.
The invention also aims to provide a manufacturing method of the COB packaging structure of the UVC-L ED, which is simple in process, low in cost and suitable for industrial production.
In order to achieve the purpose, the technical scheme provided by the invention is as follows:
the utility model provides a UVC-L ED's COB packaging structure, its includes ceramic circuit board, ceramic box dam, transparent cover, UVC-L ED chip, ceramic insulation board and reflection plywood, a plurality of UVC-L ED chips distribute form the light-emitting area on the ceramic circuit board, the ceramic insulation board sets up on the ceramic circuit board, and be equipped with and let UVC-L ED chip exposed opening, the reflection plywood sets up on the ceramic insulation board, and be equipped with the flaring hole that corresponds with the opening, the surface of reflection plywood and the pore wall of flaring hole all are equipped with reflective coating, the ceramic box dam sets up on the ceramic circuit board, and will the light-emitting area encloses, transparent cover sets up on the ceramic box dam, and will the top position of light-emitting area seals.
As an improvement of the invention, the inclination angle of the hole wall of the flared hole is 15-45 degrees, the reflection effect is good, and the light extraction efficiency is improved.
As an improvement of the invention, the reflective coating is a high-reflective aluminum layer, a molybdenum layer or a magnesium oxide layer with the reflectivity of 70-99% and the thickness of 100-5000nm, and the light reflectivity is high.
As an improvement of the invention, the ceramic box dam is fixed on the ceramic circuit board through insulating glue. The transparent cover plate is fixed on the ceramic dam through insulating cement, and is pasted and installed through the insulating cement, so that the ceramic dam is easy to realize.
As an improvement of the invention, the insulating glue is one or more of epoxy resin, silicon resin or silicon rubber. Firm adhesion, close matching and long service life.
As an improvement of the invention, a metal protection layer is arranged between the transparent cover plate and the insulating glue. The metal protective layer is a metal film formed by one or more of titanium, copper, aluminum or chromium in an overlapping or combining mode, and the thickness of the metal film is 50-400 nm. The metal protective layer is used for preventing the insulating glue from being aged by UVC light irradiation, and the service life is prolonged.
As an improvement of the invention, the substrate of the ceramic circuit board is an aluminum oxide or aluminum nitride material.
As an improvement of the invention, the ceramic insulating plate is a plate body which is made of alumina, zirconia or ZTA ceramic materials and has the thickness of less than 0.15mm, is high temperature resistant, stable in property and good in insulativity, and is matched with the expansion coefficient of the ceramic circuit board.
As an improvement of the invention, the reflecting layer plate is a metal plate body made of one or a mixture of silver, aluminum, copper, iron, stainless steel or iron-nickel alloy.
As an improvement of the invention, the UVC-L ED chip is a deep ultraviolet light emitting diode chip with the light emitting wavelength of 200-280 nm.
As an improvement of the invention, the ceramic box dam is a dam body made of alumina, aluminum nitride or zirconia materials, has high hardness, is matched with the expansion coefficient of the ceramic circuit board, and has good matching stability.
As an improvement of the invention, the transparent cover plate is made of sapphire glass, quartz glass or high-boron glass. The coating is scratch-resistant, wear-resistant, high-temperature resistant, high in spectral transmission and good in light transmission effect.
A manufacturing method of a COB packaging structure of UVC-L ED comprises the following steps:
(1) welding a UVC-L ED chip on a ceramic circuit board;
(2) fixing the ceramic dam on the ceramic circuit board, and enclosing all UVC-L ED chips;
(3) the method comprises the steps that openings corresponding to positions of UVC-L ED chips are formed in a ceramic insulating plate in advance, the ceramic insulating plate is fixed on a ceramic circuit board, and each UVC-L ED chip is located in the middle of the corresponding opening;
(4) adhering a mask on one surface of the reflecting layer plate, carrying out wet etching to obtain a flared hole, tearing the mask, and coating the reflecting layer plate by adopting a vacuum thermal evaporation coating, vacuum sputtering coating, electroplating or combined coating method so as to form a reflecting coating on the surface of the reflecting layer plate and the hole wall of the flared hole;
(5) closely attaching the other surface of the reflecting layer plate to the ceramic insulating plate, and correspondingly aligning the flared hole on the reflecting layer plate with the opening on the ceramic insulating plate so that the UVC-L ED chip passing through the opening can extend into the flared hole, wherein the caliber of one end of the flared hole, which is close to the ceramic insulating plate, is smaller, and the other end of the flared hole is gradually enlarged;
(6) plating a metal protective layer on the viscose part of the transparent cover plate by a vacuum thermal evaporation method, a vacuum sputtering coating method, an electroplating method, a sintering method or a combined coating method, then coating insulating glue on the metal protective layer, and sticking and fixing the insulating glue on the ceramic dam so as to package all UVC-L ED chips in a closed space;
the steps (1) - (3) and (4) are not in sequence.
The manufacturing method of the COB packaging structure of the UVC-L ED has the advantages that the structural design is ingenious and reasonable, light emitted by the UVC-L ED chip is reflected out of the transparent cover plate through the reflection coating of the flared hole, the light directivity is effectively improved, the light emitting efficiency of the COB light source is greatly improved, the performance of the ceramic insulating plate is stable compared with that of insulating glue, the risk of short circuit caused by aging is avoided, the metal protective layer is plated at the position of the adhesive of the transparent cover plate to prevent the insulating glue from being aged by UVC light irradiation, the service life is prolonged, and the manufacturing method of the COB packaging structure of the UVC-L ED is simple in process, low in cost and suitable for industrial production.
The invention is further described with reference to the following figures and examples.
Drawings
Fig. 1 is a schematic sectional structure of the present invention.
Fig. 2 is a schematic top view of the present invention.
Detailed Description
Example, referring to fig. 1 and 2, the present example provides a COB package structure of UVC-L ED, which includes a ceramic circuit board 1, a ceramic dam 2, a transparent cover plate 3, a UVC-L ED chip 4, a ceramic insulating plate 5, and a reflective laminate 6.
The ceramic dam 2 is preferably a dam body made of alumina, aluminum nitride or zirconia materials, and has high hardness and good structural stability. The transparent cover plate 3 is preferably sapphire glass, quartz glass, high boron glass or the like. The coating is scratch-resistant, wear-resistant, high-temperature resistant, high in spectral transmission and good in light transmission effect.
The substrate of the ceramic circuit board 1 is preferably aluminum nitride ceramic or aluminum oxide ceramic, and a conductive circuit is prepared on the substrate by electroplating and wet etching.
The UVC-L ED chips 4 are preferably deep ultraviolet light emitting diode chips with the light emitting wavelength of 200-280nm, a plurality of UVC-L ED chips 4 are uniformly distributed and positioned on the ceramic circuit board 1 and are welded with a conducting circuit on the ceramic circuit board 1, and the UVC-L ED chips 4 can be distributed on the ceramic circuit board 1 in a matrix mode or a radial mode to form light emitting regions.
The ceramic box dam 2 is fixed on the ceramic circuit board 1 through an insulating adhesive 7, the light-emitting region is surrounded by the insulating adhesive 7, the insulating adhesive 7 is preferably one or more of epoxy resin, silicon resin or silicon rubber, the ceramic box dam 2 is fixedly adhered through the insulating adhesive 7, the adhesion is firm, the matching is tight, and the service life is long, the height of the ceramic box dam 2 is slightly higher than that of the UVC-L ED chip 4, in the embodiment, the height of the UVC-L ED chip 4 is 0.3mm, the height of the ceramic box dam 2 is 0.55mm, in other embodiments, the heights of the UVC-L ED chip 4 and the ceramic box dam 2 can be correspondingly adjusted, and only the height of the ceramic box dam 2 is slightly higher than that of the UVC-L ED chip 4.
The ceramic insulating plate 5 is arranged on the ceramic circuit board 1, and is provided with an opening for exposing the UVC-L ED chip 4, the outline of the opening is circular, the ceramic insulating plate 5 is preferably a ZTA ceramic plate with the thickness of 0.1mm, and in other embodiments, the ceramic insulating plate 5 can also be a plate body made of alumina or zirconia material and with the thickness of less than 0.15 mm.
The reflecting layer plate 6 is arranged on the ceramic insulating plate 5, and the reflecting layer plate 6 is preferably a metal plate body made of one or a mixture of silver, aluminum, copper, iron, stainless steel or iron-nickel alloy. The reflecting layer plate 6 is provided with a flared hole 61 corresponding to the opening, the inclined angle of the hole wall of the flared hole 61 is 15-45 degrees, the reflecting effect is good, and the light-emitting efficiency is improved. Wherein, the caliber of the flared hole 61 close to one end of the ceramic insulating plate 5 is smaller, and the other end is gradually enlarged. The surface of the reflecting layer plate 6 and the hole wall of the flared hole 61 are both provided with a reflecting coating 62, the reflecting coating 62 is preferably a high-reflecting aluminum layer, a molybdenum layer or a magnesium oxide layer with the reflectivity of 70-99 percent and the thickness of 100-5000nm, and the UVC light reflectivity is high.
The transparent cover plate 3 is arranged on the ceramic box dam 2, and the position above the light-emitting area is closed. Specifically, will through insulating cement 8 transparent cover plate 3 pastes fixedly on ceramic box dam 2, pastes the installation through insulating cement 8, easily realizes. The insulating glue 8 is preferably one or more of epoxy resin, silicon resin or silicon rubber. Firm adhesion, close matching and long service life.
Preferably, a metal protection layer 9 is further disposed between the transparent cover plate 3 and the insulating glue 8. The metal protective layer 9 is a metal film formed by one or more of titanium, copper, aluminum or chromium in an overlapping or combining manner, and the thickness of the metal film is 50-400 nm. The metal protective layer is used for preventing the insulating glue from being aged by UVC light irradiation, and the service life is prolonged.
A manufacturing method of a COB packaging structure of UVC-L ED comprises the following steps:
(1) welding the UVC-L ED chip 4 on the ceramic circuit board 1;
(2) the ceramic box dam 2 is stuck and fixed on the ceramic circuit board 1 through the insulating glue 7, and all UVC-L ED chips 4 are encircled;
(3) an opening corresponding to the position of the UVC-L ED chip 4 is formed in advance on a ceramic insulating plate 5, the ceramic insulating plate 5 is fixed on the ceramic circuit board 1, the ceramic insulating plate 5 is limited through a ceramic dam 2, and the UVC-L ED chips 4 are respectively positioned in the middle of the opening corresponding to the UVC-L ED chips 4;
(4) adhering a mask on one surface of the reflecting layer plate 6, carrying out wet etching to obtain a flared hole 61, tearing the mask, and coating the reflecting layer plate by adopting a vacuum thermal evaporation, vacuum sputtering coating, electroplating or combined coating method so as to form a reflecting coating 62 on the surface of the reflecting layer plate and the hole wall of the flared hole 61;
the steps (1) - (3) and (4) are not in sequence, namely the steps (1) - (3) can be completed firstly, or the step (4) can be completed firstly, and then the steps (1) - (3) are executed;
(5) the other surface of the reflecting layer plate 6 is closely attached to the ceramic insulating plate 5, the reflecting layer plate 6 is limited through the ceramic box dam 2, so that the flared hole 61 on the reflecting layer plate 6 is correspondingly aligned with the opening on the ceramic insulating plate 5, and the UVC-L ED chip 4 passing through the opening can extend into the flared hole 61, wherein the caliber of one end, close to the ceramic insulating plate 5, of the flared hole 61 is smaller, and the other end of the flared hole is gradually enlarged;
(6) a metal protective layer 9 is plated at the position of the adhesive of the transparent cover plate 3 through a vacuum thermal evaporation method, a vacuum sputtering coating method, an electroplating method, a sintering method or a combined coating method, then an insulating adhesive 8 is coated on the metal protective layer 9, and the insulating adhesive 8 is adhered and fixed on the ceramic dam 2 to cover all UVC-L ED chips 4.
Variations and modifications to the above-described embodiments may occur to those skilled in the art, which fall within the scope and spirit of the above description. Therefore, the present invention is not limited to the specific embodiments disclosed and described above, and some modifications and variations of the present invention should fall within the scope of the claims of the present invention. Furthermore, although specific terms are employed herein, they are used in a generic and descriptive sense only and not for purposes of limitation. Other structures and methods that are similar or identical to the structures described in the above embodiments are also within the scope of the present invention.
Claims (10)
1. The utility model provides a UVC-L ED's COB packaging structure, its characterized in that, it includes ceramic circuit board, ceramic box dam, transparent cover, UVC-L ED chip, ceramic insulation board and reflection plywood, a plurality of UVC-L ED chips distribute form the light-emitting region on the ceramic circuit board, the ceramic insulation board sets up on the ceramic circuit board, and is equipped with lets UVC-L ED chip exposed opening, the reflection plywood sets up on the ceramic insulation board, and be equipped with the flaring hole that corresponds with the opening, the surface of reflection plywood and the pore wall of flaring hole all are equipped with reflective coating, the ceramic box dam sets up on the ceramic circuit board, and will the light-emitting region encloses, transparent cover sets up on the ceramic box dam, and will the top position of light-emitting region seals.
2. The COB package structure of UVC-L ED of claim 1, characterized in that, the hole wall inclination angle of said flared hole is 15-45 °.
3. The COB package structure of UVC-L ED according to claim 1, characterized in that, said reflective coating is a high reflective aluminum layer, molybdenum layer or magnesium oxide layer with reflectivity of 70-99% and thickness of 100-5000 nm.
4. The COB package structure of UVC-L ED according to claim 1, characterized in that said ceramic dam is fixed on said ceramic circuit board by insulating glue.
5. The COB package structure of UVC-L ED according to claim 1, characterized in that said transparent cover plate is fixed on said ceramic dam by means of insulating glue.
6. The COB package structure of UVC-L ED according to claim 5, characterized in that a metal protection layer is provided between said transparent cover plate and the insulating glue.
7. The COB package structure of UVC-L ED according to claim 6, characterized in that, said metal protection layer is a metal film formed by one or several of Ti, Cu, Al or Cr, which is stacked or combined, and the thickness of said metal film is 50-400 nm.
8. The COB packaging structure of UVC-L ED according to any one of claims 4-7, characterized in that, the insulating glue is one or more of epoxy resin, silicon resin or silicon rubber.
9. The COB package structure of UVC-L ED according to any one of claims 1 to 7, characterized in that:
the substrate of the ceramic circuit board is an aluminum nitride or aluminum oxide material;
the ceramic insulating plate is a plate body with the thickness less than 0.15mm made of alumina, zirconia or ZTA ceramic materials;
the reflecting layer plate is a metal plate body made of one or a mixture of silver, aluminum, copper, iron, stainless steel or iron-nickel alloy;
the UVC-L ED chip is a deep ultraviolet light emitting diode chip with the light emitting wavelength of 200-280 nm;
the ceramic dam is a dam body made of alumina, aluminum nitride or zirconia materials;
the transparent cover plate is made of sapphire glass, quartz glass or high-boron glass.
10. A manufacturing method of a COB packaging structure of UVC-L ED is characterized by comprising the following steps:
(1) welding a UVC-L ED chip on a ceramic circuit board;
(2) fixing the ceramic dam on the ceramic circuit board, and enclosing all UVC-L ED chips;
(3) the method comprises the steps that openings corresponding to positions of UVC-L ED chips are formed in a ceramic insulating plate in advance, the ceramic insulating plate is fixed on a ceramic circuit board, and each UVC-L ED chip is located in the middle of the corresponding opening;
(4) adhering a mask on one surface of the reflecting layer plate, carrying out wet etching to obtain a flared hole, tearing the mask, and coating the reflecting layer plate by adopting a vacuum thermal evaporation coating, vacuum sputtering coating, electroplating or combined coating method so as to form a reflecting coating on the surface of the reflecting layer plate and the hole wall of the flared hole;
(5) closely attaching the other surface of the reflecting layer plate to the ceramic insulating plate, and correspondingly aligning the flared hole on the reflecting layer plate with the opening on the ceramic insulating plate so that the UVC-L ED chip passing through the opening can extend into the flared hole, wherein the caliber of one end of the flared hole, which is close to the ceramic insulating plate, is smaller, and the other end of the flared hole is gradually enlarged;
(6) plating a metal protective layer on the viscose part of the transparent cover plate by a vacuum thermal evaporation method, a vacuum sputtering coating method, an electroplating method, a sintering method or a combined coating method, then coating insulating glue on the metal protective layer, and sticking and fixing the insulating glue on the ceramic dam so as to package all UVC-L ED chips in a closed space;
the steps (1) - (3) and (4) are not in sequence.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010438722.0A CN111463198A (en) | 2020-05-22 | 2020-05-22 | COB packaging structure of UVC-L ED and manufacturing method thereof |
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| CN202010438722.0A CN111463198A (en) | 2020-05-22 | 2020-05-22 | COB packaging structure of UVC-L ED and manufacturing method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111951679A (en) * | 2020-08-13 | 2020-11-17 | 东莞市晶博光电股份有限公司 | Panel assembly and processing method thereof, display screen and mobile terminal |
| CN112614922A (en) * | 2020-12-16 | 2021-04-06 | 松山湖材料实验室 | Ultraviolet integrated light source with reflecting cup structure and manufacturing method thereof |
-
2020
- 2020-05-22 CN CN202010438722.0A patent/CN111463198A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111951679A (en) * | 2020-08-13 | 2020-11-17 | 东莞市晶博光电股份有限公司 | Panel assembly and processing method thereof, display screen and mobile terminal |
| CN112614922A (en) * | 2020-12-16 | 2021-04-06 | 松山湖材料实验室 | Ultraviolet integrated light source with reflecting cup structure and manufacturing method thereof |
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