CN111462961A - Preparation method of high-voltage GI L surface functional gradient insulator - Google Patents
Preparation method of high-voltage GI L surface functional gradient insulator Download PDFInfo
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- CN111462961A CN111462961A CN202010220246.5A CN202010220246A CN111462961A CN 111462961 A CN111462961 A CN 111462961A CN 202010220246 A CN202010220246 A CN 202010220246A CN 111462961 A CN111462961 A CN 111462961A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B19/00—Apparatus or processes specially adapted for manufacturing insulators or insulating bodies
- H01B19/04—Treating the surfaces, e.g. applying coatings
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Abstract
The invention discloses a method for preparing a high-voltage GI L surface functional gradient insulator, which mainly comprises the steps of heating the insulator, enabling the integral surface temperature to reach a relatively stable level, regarding the variation amplitude of T1-Tn within 10 percent as relatively stable, recording the temperature stable time of the section from T1 to T2, cooling to room temperature, drying, flushing and exhausting nitrogen after a vacuum pump exhausts air, and using F for exhausting nitrogen2/N2The gas mixture is subjected to fluorination for a time period from T1 to T2 and at a temperature T1-Tn from top to bottom along the surface of the insulator. After the fluorination reaction, a fluorinated layer with gradient thickness is formed on the surface of the insulator, the insulator has surface conductivity with continuous gradient distribution, fluorine gas is exhausted, and residual gas treatment is carried out.
Description
Technical Field
The invention belongs to the technical field of insulator preparation, and particularly relates to a preparation method of a high-voltage GI L surface functional gradient insulator.
Background
The invention provides a preparation method of a high-voltage GI L surface functional gradient insulator, which can realize continuous gradient surface conductance distribution of the insulator, starts from a preparation process, improves the performance of the insulator by improving the surface structure of the insulator, is simple and easy to operate, has an industrial production prospect and is expected to play an important role in avoiding the occurrence of insulation faults in an actual system.
Disclosure of Invention
The invention takes an insulator as a research object, takes the regulated and controlled characteristics as the surface conductance distribution, and aims to provide the GI L insulator preparation method with continuous fluorinated surface distribution, realize the regulation and control of the surface characteristics of the insulator, improve the performance of the insulator and avoid the occurrence of insulation faults.
In order to solve the technical problems, the invention adopts the technical scheme that the preparation method of the high-voltage GI L surface functional gradient insulator comprises the following steps:
1) and placing an insulator in the closed reaction kettle, fixing a thermocouple on the upper surface of the insulator for heating, connecting the thermocouple with a temperature control circuit, setting the temperature to be Tset, and heating the upper surface of the insulator.
2) The surface temperature of 5 points along the surface of the insulator is measured at equal intervals by moving a temperature measuring probe, and the temperature gradient range is T1-T5.
3) After the upper surface of the insulator is heated for a certain time, the body conduction and the air conduction reach relative balance, namely the temperature of the whole surface of the insulator reaches a relatively stable level (the variation range of T1-T5 is regarded as relatively stable within 10% by integrating factors such as measurement errors and the like), and the temperature stable time of the section is recorded as T1 to T2.
4) Taking out the insulator, cooling to room temperature, drying for 3 hours, repeating the step 1, exhausting air through a vacuum pump, flushing and exhausting nitrogen for five times, and then using 20vol%F2F of (A)2/N2The gas mixture is subjected to fluorination for a time period from T1 to T2 and at a temperature from top to bottom along the surface of the insulator from T1 to T5.
5) After the fluorination reaction, a fluorinated layer with gradient thickness is formed on the surface of the insulator, and the insulator has surface conductivity in continuous gradient distribution. Fluorine gas is exhausted and residual gas treatment is performed.
The fluorination treatment time is a stable stage of the surface temperature of the insulator, and the time range is 10 minutes to 100 minutes.
The fluorination treatment temperature along the insulator surface ranges from 60 ℃ to 20 ℃ from top to bottom.
The fluorination treatment employs a temperature control device and uses 20 vol% F2F of (A)2/N2A gas mixture.
Advantageous effects
The invention can construct a fluoride layer with continuous gradient distribution conductance on the surface of the insulator. Fig. 1 is a diagram showing the preparation of an insulator fluorinated by gradient temperature, and fig. 2 is a diagram showing the dc flashover voltage of an original insulator, a uniform fluorinated insulator and a continuous gradient fluorinated insulator.
Drawings
Fig. 1 is a schematic diagram of the preparation of a temperature gradient fluorinated insulator.
Fig. 2 shows the dc flashover voltages of the starting insulator, the uniform fluorinated insulator, and the continuous gradient fluorinated insulator.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
1) An insulator is placed in the closed reaction kettle, a thermocouple is fixed on the upper surface of the insulator for heating, the thermocouple is connected with a temperature control circuit, the temperature is set to be 42 ℃, and the upper surface of the insulator is heated.
2) The surface temperature of 5 points along the surface of the insulator is measured at equal intervals by moving a temperature probe, and the temperature gradient range is 40-30 ℃.
3) After the upper surface of the insulator is heated for a certain time, the body conduction and the air conduction reach relative balance, namely the whole surface temperature of the insulator reaches a relatively stable level (factors such as comprehensive measurement errors and the like, the change range of 40-30 ℃ is regarded as relatively stable within 10 percent), and the temperature stable time of the section is recorded to be from 27 minutes to 37 minutes.
4) Taking out the insulator and cooling to room temperature, drying for 3 hours, repeating step 1, exhausting air by a vacuum pump, flushing and exhausting nitrogen for five times, and then using 20 vol% F2F of (A)2/N2The gas mixture is subjected to fluorination for a time period of from 27 to 37 minutes at a temperature of from 40 to 30 ℃ along the surface of the insulator from top to bottom.
After the fluorination reaction, a fluorinated layer with gradient thickness is formed on the surface of the insulator, and the insulator has surface conductivity in continuous gradient distribution. Fluorine gas is exhausted and residual gas treatment is performed.
Fig. 1 is a schematic diagram of the preparation of a temperature gradient fluorinated insulator.
Fig. 2 shows the dc flashover voltages of the starting insulator, the uniform fluorinated insulator, and the continuous gradient fluorinated insulator.
Claims (4)
1. A preparation method of a high-voltage GI L surface functional gradient insulator is characterized by comprising the following steps:
1) placing an insulator in the closed reaction kettle, fixing a thermocouple on the upper surface of the insulator for heating, connecting the thermocouple with a temperature control circuit, setting the temperature, and heating the upper surface of the insulator;
2) measuring the surface temperature of a plurality of equidistant points along the surface of the insulator by moving a temperature measuring probe, wherein the temperature gradient range is T1-Tn
3) After the upper surface of the insulator is heated for a certain time, the body conduction and the air conduction reach relative balance, namely the temperature of the whole surface of the insulator reaches a relatively stable level, the variation amplitude of T1-Tn is regarded as relatively stable within 10%, and the temperature stable time of the section is recorded as T1 to T2;
4) taking out the insulator, cooling to room temperature, drying, repeating step 1), exhausting air via vacuum pump, flushing with nitrogen gas, and exhausting for five times2/N2The gas mixture is subjected to a fluorination treatment for a time selected fromT1 to T2, and the fluorination treatment temperature from top to bottom along the surface of the insulator is T1-Tn
5) After the fluorination reaction, a fluorinated layer with gradient thickness is formed on the surface of the insulator, the insulator has surface conductivity with continuous gradient distribution, fluorine gas is exhausted, and residual gas treatment is carried out.
2. The method of claim 1, wherein the time for the fluorination treatment is a plateau of the surface temperature of the insulator, and the time is in a range of 10 minutes to 100 minutes.
3. The method of claim 1, wherein the temperature of the fluorination treatment along the surface of the insulator from top to bottom is in the range of 60 ℃ to 20 ℃.
4. The method of claim 1, wherein the fluorination treatment is performed by using a temperature control device and 20 vol% F2F of (A)2/N2A gas mixture.
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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US2537388A (en) * | 1947-05-14 | 1951-01-09 | Bell Telephone Labor Inc | Beam amplifier |
CN103337320A (en) * | 2013-06-13 | 2013-10-02 | 天津学子电力设备科技有限公司 | Surface charge quick dissipation method for silicone rubber composite insulator |
CN106847422A (en) * | 2017-02-28 | 2017-06-13 | 天津大学 | Direct current cables annex silicon rubber insulation surface molecules structure regulating device and method |
US20170301435A1 (en) * | 2014-11-04 | 2017-10-19 | Kabushiki Kaisha Toshiba | Processing apparatus and processing method |
CN108320874A (en) * | 2018-03-16 | 2018-07-24 | 天津大学 | The method of inhibition GIS insulator surface charge accumulations based on linear gradient processing |
CN109659102A (en) * | 2018-12-29 | 2019-04-19 | 天津大学 | GIL insulator flashover voltage improving method based on gas-solid interface electric field optimization |
-
2020
- 2020-03-25 CN CN202010220246.5A patent/CN111462961A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2537388A (en) * | 1947-05-14 | 1951-01-09 | Bell Telephone Labor Inc | Beam amplifier |
CN103337320A (en) * | 2013-06-13 | 2013-10-02 | 天津学子电力设备科技有限公司 | Surface charge quick dissipation method for silicone rubber composite insulator |
US20170301435A1 (en) * | 2014-11-04 | 2017-10-19 | Kabushiki Kaisha Toshiba | Processing apparatus and processing method |
CN106847422A (en) * | 2017-02-28 | 2017-06-13 | 天津大学 | Direct current cables annex silicon rubber insulation surface molecules structure regulating device and method |
CN108320874A (en) * | 2018-03-16 | 2018-07-24 | 天津大学 | The method of inhibition GIS insulator surface charge accumulations based on linear gradient processing |
CN109659102A (en) * | 2018-12-29 | 2019-04-19 | 天津大学 | GIL insulator flashover voltage improving method based on gas-solid interface electric field optimization |
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