CN106847422A - Direct current cables annex silicon rubber insulation surface molecules structure regulating device and method - Google Patents
Direct current cables annex silicon rubber insulation surface molecules structure regulating device and method Download PDFInfo
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- CN106847422A CN106847422A CN201710114358.0A CN201710114358A CN106847422A CN 106847422 A CN106847422 A CN 106847422A CN 201710114358 A CN201710114358 A CN 201710114358A CN 106847422 A CN106847422 A CN 106847422A
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- reactor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/06—Insulating conductors or cables
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- Testing Relating To Insulation (AREA)
Abstract
The invention discloses direct current cables annex silicon rubber insulation surface molecules structure regulating device and method, method is comprised the following steps：(1) vavuum pump extraction kettle inner air is utilized, vavuum pump is closed after the completion of vacuumizing；Nitrogen cylinder pressure-reducing valve is opened, to nitrogen injection in reactor and ambient pressure is reached, said process is repeated at least five times；(2) fluorine, nitrogen mixed gas that fluorine gas volume fraction is 20% are filled with so that air pressure reaches 300mbar in reactor to reactor inside is slow；(3) continue to be filled with inside reactor nitrogen until reactor in air pressure reach 500mbar, make fluorine, nitrogen mixed gas and silicon rubber specimen reaction, it is 25 DEG C to keep reactor temperature, by after certain reaction time, the C H keys in silicon rubber sample surface molecules is replaced by C F keys, obtain surface molecules structure and form one layer of silicon rubber sample with the space-charge screening layer of electronegativity.By the apparatus and method, the electron screening effect in enhancing direct current cables annex silicon rubber insulation space.
Description
Technical field
It is to be related to direct current cables annex in particular the present invention relates to reinforced insulation space-charge screening method field
Silicon rubber insulation surface molecules structure regulating device and method.
Background technology
With it is industrialized continue to develop and science and technology continuous progress, polymer matrix solid dielectric material is in electricity high
Pressure engineering, power electronics, microelectronics insulation and all kinds of dependence electric charges are resident and the special sensor of behavior such as polarization in should
With more and more extensive.Particularly the polymer nanocomposites of material are a dark horse based on polymer in recent years, are turned into
The study hotspot of electric insulation and relevant art.
Silicon rubber composite insulation is used as cable with its excellent dielectric properties, high and low temperature resistance, tensile property etc.
Annex reinforced insulation.And for direct current cables annex, the work of unipolar electric field is chronically at due to silicon rubber reinforced insulation
Under, various interfaces, defect or the impurity that insulating materials inside is present can cause insulating materials inside that interfacial polarization row occurs
For and space charge injection, so as to fault location formed space charge accumulation phenomena.The generation and accumulation of space charge
Dielectric can be caused to be partially formed high field intensity, and then trigger shelf depreciation, cause fracture and the free radical of polymer molecule key
Formation, accelerating medium is aging, and then influences the dielectric strength of dielectric substance；On the other hand, with dielectric dielectric strength
Decline, the formation of space charge induced discharge passage, easily trigger in solid insulating material electric branch discharge and cause absolutely
Puncturing for edge material, causes the generation of interruption of service.Direct current cables annex has become the key in direct current cables transmission system
Position and weak link, and the injection of space charge and accumulation exactly cause the basic reason of this problem, become direct current
Key issue urgently to be resolved hurrily in cable fittings development.
At present, the space charge suppressing method of solid dielectric insulation is broadly divided into two classes in theory：One is that solid insulation is situated between
Matter sheet is modifies, and the most frequently used at present is exactly inorganic nanoparticles composite dielectrics.But due to direct current cables annex in industry
Interior silicon rubber reinforced insulation needs to fill substantial amounts of gas-phase silica, antistructurizing agent, tear-proof agent and vulcanizing agent etc. and adds
Plus agent electrically and mechanically etc. is introduced into substantial amounts of chemical impurity composition inside performance, therefore silicon rubber insulation to improve it, thus
Tested prove inorganic nanoparticles filling method for the addition of certain balanced constant silicon rubber reinforced insulation not
It is applicable.Two is that solid dielectric insulation surface is modified, and electron screening layer is increased on its surface, and space charge injection is suppressed so as to reach
Effect.Conventional method is to paste one layer of insulation film in polymer surfaces at present, although this method can suppress empty
Between electric charge injection, but also change insulation system and Electric Field Distribution situation simultaneously, directly affects Jie of silicon rubber insulation
Electricity, puncture with flashover performance etc., therefore such method still has no the report of related application so far.
Therefore, how a space electricity is introduced on its surface in the case where silicon rubber insulation matrix dielectric properties are not influenceed
Lotus screen layer is still at present a problem, and direct current cables accessory internal silicon rubber reinforced insulation problems with space charge is urgently to be resolved hurrily.
The content of the invention
The invention aims to overcome deficiency of the prior art, there is provided a kind of direct current cables annex silicon rubber insulation
Surface molecules structure regulating device and method, by the apparatus and method, enhancing direct current cables annex silicon rubber insulation space
Electron screening is acted on.
The purpose of the present invention is achieved through the following technical solutions：
Direct current cables annex silicon rubber insulation surface molecules structure regulating device, including for placing the reactor of sample,
It is provided with heater and temperature probe in the reactor, reactor is connected to fluorine gas bottle, nitrogen cylinder and true by pipeline
Empty pump, is equipped with valve on the pipeline, the vavuum pump is connected with vent gas treatment tank, and the temperature probe is connected with thermometric unit
Part, is additionally provided with air gauge on reactor.
The regulation and control method of direct current cables annex silicon rubber insulation surface molecules structure regulating device, comprises the following steps：
(1) vavuum pump extraction kettle inner air is utilized, vavuum pump is closed after the completion of vacuumizing；Open nitrogen cylinder decompression
Valve, to nitrogen injection in reactor and reaches ambient pressure, repeats said process at least five times, to ensure in reactor and pipeline
Gas emptying；
(2) fluorine, nitrogen mixed gas that fluorine gas volume fraction is 20% are filled with so that gas in reactor to reactor inside is slow
Pressure reaches 300mbar；
(3) continue to be filled with inside reactor nitrogen until reactor in air pressure reach 500mbar, make fluorine, nitrogen mixed gas
With silicon rubber specimen reaction, it is 25 DEG C to keep reactor temperature, by after the reaction time of 10-30min, making silicon rubber sample
C h bond in surface molecules is replaced by C-F keys, obtains forming one layer of sky with electronegativity after surface molecules structure is adjusted
Between electron screening layer silicon rubber sample, open vavuum pump by internal residual gas discharge.
Completion is vacuumized in step (1) and refers to that air pressure list index reaches -0.1Mpa on reactor.
In step (2), control reactor in blender gas gas atmosphere, concentration and reaction temperature it is constant under conditions of, point
The silicon rubber sample that the surface molecules structure regulating time is respectively 20 and 40min is not obtained.
Compared with prior art, the beneficial effect that technical scheme is brought is：
(1) injection and the accumulation process of silicone rubber insulation material Space-charge are significantly inhibited；
(2) insulation and the mechanical performance of cable accessory silicon rubber reinforced insulation itself are not influenceed；
(3) production technology and simple flow, and course of reaction stablizes controllable.
Brief description of the drawings
Fig. 1 is the principle schematic diagram. of apparatus of the present invention.
Fig. 2 is the principle of adjustment and control figure of silicon rubber insulation surface molecules structure of the present invention.
Fig. 3-1 and Fig. 3-2 is silicon rubber top layer pattern contrast schematic diagram before and after surface molecules structure regulating in the present invention；Figure
3-3 and Fig. 3-4 is that silicon rubber chemical element constitutes contrast schematic diagram before and after surface molecules structure regulating in the present invention.
Fig. 4-1 to Fig. 4-3 is the silicon rubber insulation space charge product of different surface molecules structure regulating degree in the present invention
Poly- characteristic schematic diagram.
Fig. 5-1 to Fig. 5-3 is that the silicon rubber insulation space charge of different surface molecules structure regulating degree in the present invention disappears
Dissipate characteristic schematic diagram.
Reference：1- reactors, 2- fluorine gas bottle, 3- nitrogen cylinders, 4- vavuum pumps, 5- vent gas treatment tanks, 6- temperature elements,
7- air gauges, 8- temperature detection gauge heads
Specific embodiment
The invention will be further described below in conjunction with the accompanying drawings：
Due to containing substantial amounts of methyl group in silicon rubber surface molecules, using the active activity performance of fluorine gas to silicon rubber
Surface molecules structure regulating is carried out, c h bond is replaced by C-F keys, it is a large amount of fluorine-containing so as to be introduced in silicon rubber surface molecules
Functional group, the regulation process of silicon rubber top layer chemical molecular formula is as shown in Figure 2.Because fluorine gas has stronger corrosivity, therefore
To ensure the personal security during surface molecules structure regulating, a set of direct current cables annex silicon rubber reinforced insulation table is devised
The regulation device of layer molecular structure, as shown in figure 1, including the reactor 1 for placing sample, heating dress is provided with reactor 1
Put and fluorine gas bottle 2, nitrogen cylinder 3 and vavuum pump 4 are connected to by pipeline, are equipped with pipeline with temperature probe 8, reactor 1
Valve, vavuum pump 4 is connected with vent gas treatment tank 5, and temperature probe 8 is connected with temperature element 6, air gauge is additionally provided with reactor 1
7。
Specific regulation and control step is as follows：
1. utilize the quick inner air of extraction kettle 1 of vavuum pump 4, until on reactor 1 gauge hand reach-
After 0.1MPa, vavuum pump 4 is closed；The pressure-reducing valve of nitrogen cylinder 3 is opened, high pure nitrogen and ambient pressure is reached to being injected in reactor 1.
After being iteratively repeated said process five times, it is ensured that the thorough emptying of gas in reactor and pipeline.
2. fluorine, nitrogen mixed gas that fluorine gas volume fraction is 20% are filled with so that gas in reactor 1 to the inside of reactor 1 is slow
Pressure reaches 300mbar；
3. then to be filled with inside reactor 1 high pure nitrogen until reactor 1 in air pressure reach 500mbar (0.5 standard
Atmospheric pressure), obtain certain density fluorine, nitrogen mixed gas and be allowed to and silicon rubber specimen reaction.It is 25 to keep temperature in reactor 1
DEG C, internal residual gas is discharged by after certain reaction time, opening vavuum pump.The present embodiment is in control hybrid reaction gas
Body air pressure, concentration and reaction temperature it is constant on the premise of, change the reaction time obtained the surface molecules structure regulating time difference
It is the silicon rubber sample of 20 and 40min.
The present invention can form a layer thickness for several microns by by introducing fluorine-containing functional group in silastic surface
Surface fluorination layer.Fluorine unit is the minimum atom of atomic radius in addition to hydrogen atom, and it has extremely strong electronegativity (latent electricity
Son ability), so that at bucking electrode/dielectric interface electronics injection process, shielding space electric charge is in silicon rubber insulation
The injection and accumulation in portion.
Using the table of silicon rubber sample after SEM and X-ray energy spectrum analysis observation surface molecules structure regulating
Layer top layer pattern and chemical element are constituted, as shown in Fig. 3-1 to Fig. 3-4.It can be found that being formd on silicon rubber specimen surface
One layer of obvious fluorinated layer.Constituted using the element of red boxes inner region in X-ray diffraction analysis comparison diagram 3-1 and 3-2, just
Demonstrate and introduce substantial amounts of fluorine element in sample surface molecules after reacting.
Three groups of examinations of differential responses time are measured using electroacoustic pulse (PEA) space charge measurement method the most frequently used at present
Sample space charge is gathered and gathers situation it can be found that surface molecules knot with dissipation characteristic, the space charge from Fig. 4-1 to Fig. 4-3
The silicon rubber sample of structure regulation and control 20min is almost gathered inside it relative to other two groups of samples without space charge, electric charge quilt
On sample top layer, it shows obvious space charge rejection characteristic for the surface fluorination layer shielding of sample both sides.And for reaction
For time is for the silicon rubber sample of 40min, excessive surface molecules structure causes the Si-O-Si main chains in silicon rubber molecule
Destroyed by fluorine nitrogen mixed gas, substantial amounts of fracture and small molecule isopolarity group are formed in specimen surface, so as to exacerbate space
The accumulation of electric charge.
The silicon rubber insulation space charge evanishment of different surface molecules structure regulating degree in from Fig. 5-1 to Fig. 5-3
In, it is same it can be found that silicon rubber insulation internal space-charge is minimum when the reaction time is 20min, and it is most fast to dissipate.Therefore it is right
In silicon rubber reinforced insulation, when reaction temperature be 25 DEG C, fluorine nitrogen mixed gas bulk concentration to be 20%, pressure be 500mbar when, reaction
Time be set as 20min i.e. can silastic surface formed layer of surface fluorinated layer, shielding space electric charge to sample inside
Injection process.Sheaf space electron screening layer is formed on its surface by silicon rubber insulation surface molecules are structurally-modified, to straight
Stream cable accessory forms the effect of space-charge screening.
The present invention is not limited to embodiments described above.Description to specific embodiment above is intended to describe and says
Bright technical scheme, above-mentioned specific embodiment is only schematical, is not restricted.This is not being departed from
In the case of invention objective and scope of the claimed protection, one of ordinary skill in the art may be used also under enlightenment of the invention
The specific conversion of many forms is made, these are belonged within protection scope of the present invention.
Claims (4)
1. direct current cables annex silicon rubber insulation surface molecules structure regulating device, it is characterised in that including for placing sample
Reactor, be provided with heater and temperature probe in the reactor, reactor is connected to fluorine gas bottle, nitrogen by pipeline
Gas cylinder and vavuum pump, are equipped with valve on the pipeline, the vavuum pump is connected with vent gas treatment tank, the temperature probe connection
There is temperature element, air gauge is additionally provided with reactor.
2. the regulation and control method of direct current cables annex silicon rubber insulation surface molecules structure regulating device according to claim 1,
It is characterised in that it includes following steps：
(1) vavuum pump extraction kettle inner air is utilized, vavuum pump is closed after the completion of vacuumizing；Nitrogen cylinder pressure-reducing valve is opened,
To nitrogen injection in reactor and ambient pressure is reached, repeat said process at least five times, to ensure in reactor and pipeline
Gas emptying；
(2) fluorine, nitrogen mixed gas that fluorine gas volume fraction is 20% are filled with so that air pressure reaches in reactor to reactor inside is slow
To 300mbar；
(3) continue to be filled with inside reactor nitrogen until reactor in air pressure reach 500mbar, make fluorine, nitrogen mixed gas and silicon
Rubbery sample reacts, and it is 25 DEG C to keep reactor temperature, by after the 10-30min reaction time, making silicon rubber sample top layer point
C h bond in son is replaced by C-F keys, obtains forming one layer of space charge with electronegativity after surface molecules structure is adjusted
The silicon rubber sample of screen layer, opens vavuum pump and discharges internal residual gas.
3. the regulation and control method of direct current cables annex silicon rubber insulation surface molecules structure regulating device according to claim 2,
Characterized in that, completion is vacuumized in step (1) refers to that air pressure list index reaches -0.1Mpa on reactor.
4. the regulation and control method of direct current cables annex silicon rubber insulation surface molecules structure regulating device according to claim 2,
Characterized in that, in step (2), blender gas gas atmosphere in control reactor, concentration and reaction temperature it is constant under conditions of,
Respectively obtain the silicon rubber sample that the surface molecules structure regulating time is respectively 20 and 40min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710114358.0A CN106847422A (en) | 2017-02-28 | 2017-02-28 | Direct current cables annex silicon rubber insulation surface molecules structure regulating device and method |
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|---|---|---|---|
| CN201710114358.0A CN106847422A (en) | 2017-02-28 | 2017-02-28 | Direct current cables annex silicon rubber insulation surface molecules structure regulating device and method |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107602900A (en) * | 2017-08-23 | 2018-01-19 | 天津大学 | Surface state improves high-voltage direct-current cable accessory insulator interface charge restraining method |
| CN108468252A (en) * | 2018-02-08 | 2018-08-31 | 天津大学 | A kind of surface modifying method improving cellulose insulation paper electric durability energy |
| CN109411233A (en) * | 2018-09-30 | 2019-03-01 | 天津大学 | A method of improving the flashover voltage of polypropylene film at high temperature |
| CN111025104A (en) * | 2019-12-27 | 2020-04-17 | 哈尔滨理工大学 | Temperature-adjustable polymer electric tree growth observation system |
| CN111326299A (en) * | 2020-03-25 | 2020-06-23 | 天津大学 | Continuous gradient surface fluorination modification device and method for polymer material |
| CN111462961A (en) * | 2020-03-25 | 2020-07-28 | 天津大学 | Preparation method of high-voltage GI L surface functional gradient insulator |
| CN113960392A (en) * | 2021-09-14 | 2022-01-21 | 河北工业大学 | Aviation insulating material modification method capable of improving flashover voltage and test system thereof |
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| JPH06187860A (en) * | 1992-12-17 | 1994-07-08 | Fujikura Ltd | Method for treating surface of cable insulator |
| CN103280280A (en) * | 2013-04-25 | 2013-09-04 | 西北核技术研究所 | Method for improving flashover performance of vacuum edge surface of polymer insulator |
| CN103337320A (en) * | 2013-06-13 | 2013-10-02 | 天津学子电力设备科技有限公司 | Surface charge quick dissipation method for silicone rubber composite insulator |
| CN105761857A (en) * | 2016-02-24 | 2016-07-13 | 西安交通大学 | Method for fluorinating insulator through use of CF4 plasma |
| CN206639652U (en) * | 2017-02-28 | 2017-11-14 | 天津大学 | Direct current cables annex silicon rubber insulation surface molecules structure regulating device |
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2017
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Patent Citations (5)
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| JPH06187860A (en) * | 1992-12-17 | 1994-07-08 | Fujikura Ltd | Method for treating surface of cable insulator |
| CN103280280A (en) * | 2013-04-25 | 2013-09-04 | 西北核技术研究所 | Method for improving flashover performance of vacuum edge surface of polymer insulator |
| CN103337320A (en) * | 2013-06-13 | 2013-10-02 | 天津学子电力设备科技有限公司 | Surface charge quick dissipation method for silicone rubber composite insulator |
| CN105761857A (en) * | 2016-02-24 | 2016-07-13 | 西安交通大学 | Method for fluorinating insulator through use of CF4 plasma |
| CN206639652U (en) * | 2017-02-28 | 2017-11-14 | 天津大学 | Direct current cables annex silicon rubber insulation surface molecules structure regulating device |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107602900A (en) * | 2017-08-23 | 2018-01-19 | 天津大学 | Surface state improves high-voltage direct-current cable accessory insulator interface charge restraining method |
| CN108468252A (en) * | 2018-02-08 | 2018-08-31 | 天津大学 | A kind of surface modifying method improving cellulose insulation paper electric durability energy |
| CN109411233A (en) * | 2018-09-30 | 2019-03-01 | 天津大学 | A method of improving the flashover voltage of polypropylene film at high temperature |
| CN111025104A (en) * | 2019-12-27 | 2020-04-17 | 哈尔滨理工大学 | Temperature-adjustable polymer electric tree growth observation system |
| CN111326299A (en) * | 2020-03-25 | 2020-06-23 | 天津大学 | Continuous gradient surface fluorination modification device and method for polymer material |
| CN111462961A (en) * | 2020-03-25 | 2020-07-28 | 天津大学 | Preparation method of high-voltage GI L surface functional gradient insulator |
| CN113960392A (en) * | 2021-09-14 | 2022-01-21 | 河北工业大学 | Aviation insulating material modification method capable of improving flashover voltage and test system thereof |
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Application publication date: 20170613 |