CN111446323A - PERC double-sided battery and manufacturing method and packaging process thereof - Google Patents
PERC double-sided battery and manufacturing method and packaging process thereof Download PDFInfo
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- CN111446323A CN111446323A CN202010287915.0A CN202010287915A CN111446323A CN 111446323 A CN111446323 A CN 111446323A CN 202010287915 A CN202010287915 A CN 202010287915A CN 111446323 A CN111446323 A CN 111446323A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
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- 238000004021 metal welding Methods 0.000 claims description 11
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- 238000010030 laminating Methods 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 6
- 125000004437 phosphorous atom Chemical group 0.000 claims description 6
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 6
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- 239000007788 liquid Substances 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 239000012466 permeate Substances 0.000 claims description 3
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a PERC double-sided battery, wherein a plurality of back grid lines are transversely distributed at intervals, and the back grid lines are formed by alternately connecting a plurality of back silver grid lines and a plurality of back aluminum grid lines to form a back structure of the PERC double-sided battery. The invention also discloses a method for manufacturing the PERC double-sided battery, which comprises the steps of carrying out laser processing on the corresponding position to obtain a positioning Marking point; printing a back silver grid line by precision alignment through a printing screen and a positioning Marking point; printing back aluminum grid lines through two printing screen plates and a positioning Marking point in a precision alignment manner; and printing front grid lines on the front side of the battery. The front side of the double-sided battery adopts a non-main grid design, the use amount of silver paste is reduced, the back side adopts a new grid line structure design, the silver grid lines are only used at the welding line contact positions on the back side of the battery, and the rest areas which are not in contact with the welding lines are all manufactured by adopting aluminum grid lines to obtain the PERC double-sided battery, so that the cost of the paste of the PERC battery can be greatly reduced.
Description
Technical Field
The invention relates to the technical field of solar photovoltaic cell manufacturing and module packaging manufacturing, in particular to a PERC double-sided battery and a manufacturing method and a packaging process thereof.
Background
The packaging technology for reducing the production cost of the photovoltaic cell and improving the power of the assembly is the most effective method for improving the photovoltaic energy, wherein the method for reducing the use amount of slurry in the manufacturing process of the photovoltaic cell is one of the most direct methods for reducing the manufacturing cost of the photovoltaic cell.
At present, the design and manufacture of the PERC battery are calculated by matching with the traditional welding assembly packaging technology, and the welding process needs a welding surface with a certain area to be contacted with a welding wire, so that the welding requirement is met, and the cost of slurry of the photovoltaic battery is higher.
The front electrode structure of the solar cell with the authorization notice number CN 203312312U in the prior art comprises a frame and a cell front electrode, wherein the cell front electrode comprises main grid lines and auxiliary grid lines, the main grid lines are longitudinally distributed at intervals, the auxiliary grid lines are distributed with the main grid lines in a cross mode, the main grid lines are of an interrupted structure, each interrupted main grid line is connected through a welding wire, and auxiliary grid lines parallel to the main grid lines are arranged between adjacent main grid lines.
However, the above electrode structure still has the following defects and problems in the technical aspects of saving raw materials and reducing cost, and a large amount of main grid silver paste can be consumed by adopting the arrangement mode of the main grid lines, so that the cost of the paste of the PERC battery is greatly increased.
Disclosure of Invention
The invention aims to provide a PERC double-sided battery, a manufacturing method thereof and a packaging process thereof, so as to solve the problems in the background technology.
In order to achieve the purpose, the invention provides the following technical scheme:
the PERC double-sided battery comprises a plurality of front grid lines arranged on the front side of the battery and a plurality of back grid lines arranged on the back side of the battery, wherein the back grid lines are distributed at intervals transversely, and the back grid lines are formed by alternately connecting a plurality of back silver grid lines and a plurality of back aluminum grid lines to form a back structure of the PERC double-sided battery.
Preferably, a printing overlapping region is arranged at the connection position of the back silver grid line and the back aluminum grid line.
Preferably, both ends of the back grid line are set as back aluminum grid lines.
Preferably, both ends of the back grid line are set as back silver grid lines.
Preferably, one end of the back grid line is set as a back silver grid line, and the other end of the back grid line is set as a back aluminum grid line.
Preferably, one side of the plurality of back grid lines is set to be back silver grid lines from top to bottom.
Preferably, one side of the plurality of back grid lines is arranged at intervals between the back silver grid line and the back aluminum grid line from top to bottom.
A method of making the PERC bifacial battery comprising the steps of:
1) a single polycrystalline silicon wafer is subjected to surface texturing to obtain a good textured structure;
2) cleaning residual liquid during the wool making;
3) reacting phosphorus oxychloride with the silicon wafer to obtain phosphorus atoms, wherein the phosphorus atoms enter the surface layer of the silicon wafer after a certain time and permeate and diffuse into the silicon wafer through gaps among the silicon atoms to form an interface of an N-type semiconductor and a P-type semiconductor;
4) etching and removing PN junctions at the edge through plasma etching, so as to avoid short circuit at the edge;
5) the diffusion junction making process can form a layer of phosphorosilicate glass on the surface of the silicon wafer, and the influence on the efficiency of the laminated tile battery is reduced through the phosphorosilicate glass removing process;
6) laminating an aluminum oxide passivation layer with a certain thickness on the back of the battery by adopting an A L D or PERC mode;
7) depositing one or more layers of silicon nitride antireflection films on the back surface, and completing the preparation of the antireflection films through a PECVD (plasma enhanced chemical vapor deposition) process;
8) depositing one or more layers of silicon nitride antireflection films on the front surface of the cell, and completing the silicon nitride antireflection films through a PECVD (plasma enhanced chemical vapor deposition) process;
further comprising:
9) carrying out laser grooving on the back of the battery, and carrying out laser processing on a corresponding position to obtain a positioning Marking point;
10) capturing and positioning a Marking point by using a CCD camera, and performing precision counterpoint printing on the back silver grid line through a printing screen and the positioning Marking point;
11) capturing a printed positioning Marking point by using two CCD cameras, performing precision contraposition printing on the back aluminum grid line by using two printing screen plates and the positioning Marking point, and ensuring that the back aluminum grid line and the back silver grid line are alternately connected;
12) and printing a front grid line on the front surface of the battery, and performing a sintering test.
A PERC double-sided battery component packaging process is used for the PERC double-sided battery and comprises the following steps:
1) one end of a metal welding wire is used for carrying out counterpoint interconnection with a back silver grid line of a battery, and the other end of the metal welding wire is interconnected with a front grid line of another battery;
2) connecting the positive electrode and the negative electrode of the battery piece in sequence to form a battery string, and typesetting and laminating the battery string;
3) and laminating the laminated battery strings, and framing and testing the laminated pieces to finish the assembly packaging and manufacturing.
Compared with the prior art, the invention has the beneficial effects that:
the front side of the solar cell is designed without a main grid, the use amount of silver paste is reduced, the back side of the solar cell adopts a new grid line design structure, the silver grid lines are only used at the welding line contact positions on the back side of the cell, and the rest areas which are not in contact with the welding lines are all manufactured by adopting aluminum grid lines to obtain the PERC double-sided cell, so that the cost of the paste of the PERC cell can be greatly reduced, the conversion efficiency of the cell is improved, and the PERC double-sided cell disclosed by the invention is matched with a novel welding line interconnection packaging technology, so that the power of a component can be improved.
Drawings
Fig. 1 is a schematic structural diagram of a first embodiment in which two ends of a back gate line are both provided with a back aluminum gate line;
FIG. 2 is an enlarged view of the structure of area A in FIG. 1;
fig. 3 is a schematic structural diagram of a second embodiment in which two ends of a back gate line are both set as back silver gate lines;
fig. 4 is a schematic structural diagram of a third embodiment in which two ends of a back gate line are respectively provided with a back silver gate line and a back aluminum gate line;
fig. 5 is a schematic structural diagram of a fourth embodiment in which two ends of a back gate line are respectively provided with a back silver gate line and a back aluminum gate line;
FIG. 6 is a schematic view of a printed back silver grid line structure during the double-sided battery manufacturing method of the present invention;
FIG. 7 is a schematic view of a printed aluminum-backed grid line structure during the double-sided battery manufacturing method of the present invention;
fig. 8 is a schematic view of a front grid line structure of a double-sided battery of the present invention;
fig. 9 is a schematic view of a connection structure of a metal bonding wire and a back silver gate line according to a first embodiment of the invention;
FIG. 10 is an enlarged view of the structure of the area B in FIG. 9;
fig. 11 is a schematic view of a connection structure of a metal bonding wire and a grid line on the front surface of a battery.
In the figure: the method comprises the following steps of 1 front grid line, 2 back grid lines, 3 back silver grid lines, 4 back aluminum grid lines, 5 metal welding lines, 6 printing overlapping areas and 7 positioning Marking points.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-11, the present invention provides a technical solution:
the first embodiment is as follows: a PERC double-sided battery comprises a plurality of front grid lines 1 arranged on the front side of the battery and a plurality of back grid lines 2 arranged on the back side of the battery, wherein the back grid lines 2 are distributed at intervals transversely, and the back grid lines 2 are formed by alternately connecting a plurality of back silver grid lines 3 and a plurality of back aluminum grid lines 4, so that a back structure of the PERC double-sided battery is formed, a printing overlapping area 6 is arranged at the joint of the back silver grid lines 3 and the back aluminum grid lines 4, the back silver grid lines 3 and the back aluminum grid lines 4 can be ensured to be better connected, and the back silver grid lines 3 which are adjacent up and down are connected through metal welding wires 5;
as shown in the attached drawing 1, two ends of the back grid line 2 are both provided with back aluminum grid lines 4, and two ends of the back grid line 2, which are in contact with the cell frame, are both provided with back aluminum grid lines 4, as shown in the attached drawing 9, the back silver grid lines 3 in the up-and-down direction are on the same vertical line and are used for being welded and connected by metal welding wires 5.
Example two: a PERC double-sided battery comprises a plurality of front grid lines 1 arranged on the front side of the battery and a plurality of back grid lines 2 arranged on the back side of the battery, wherein the back grid lines 2 are distributed at intervals transversely, the back grid lines 2 are formed by alternately connecting a plurality of back silver grid lines 3 and a plurality of back aluminum grid lines 4, a printing overlapping area 6 is arranged at the joint of the back silver grid lines 3 and the back aluminum grid lines 4, the back silver grid lines 3 and the back aluminum grid lines 4 can be ensured to be better connected, and the back silver grid lines 3 which are adjacent up and down are connected through metal welding wires 5;
as shown in the attached drawing 3 in the specification, two ends of the back grid line 2 are both set as back silver grid lines 3, two ends of the back grid line 2, which are in contact with the battery piece frame, are both back silver grid lines 3, and the back silver grid lines 3 in the up-down direction are positioned on the same vertical line and are used for welding and connecting metal welding wires 5.
Example three: a PERC double-sided battery comprises a plurality of front grid lines 1 arranged on the front side of the battery and a plurality of back grid lines 2 arranged on the back side of the battery, wherein the back grid lines 2 are distributed at intervals transversely, the back grid lines 2 are formed by alternately connecting a plurality of back silver grid lines 3 and a plurality of back aluminum grid lines 4, a printing overlapping area 6 is arranged at the joint of the back silver grid lines 3 and the back aluminum grid lines 4, the back silver grid lines 3 and the back aluminum grid lines 4 can be ensured to be better connected, and the back silver grid lines 3 which are adjacent up and down are connected through metal welding wires 5;
as shown in the attached drawing 4, one end of the back grid line 2 is set as a back silver grid line 3, the other end of the back grid line is set as a back aluminum grid line 4, the back grid line 2 is in contact with the frame of the battery piece, one end of the back silver grid line 3 is set as the back silver grid line, the other end of the back aluminum grid line 4 is set as the back aluminum grid line 4, the left sides of the back grid lines 2 are all set as the back silver grid line 3 from top to bottom, the right side of the back grid line 2 and the connecting end of the frame are both set as the back aluminum grid line 4, and the back silver grid lines 3 in.
Example four: a PERC double-sided battery comprises a plurality of front grid lines 1 arranged on the front side of the battery and a plurality of back grid lines 2 arranged on the back side of the battery, wherein the back grid lines 2 are distributed at intervals transversely, the back grid lines 2 are formed by alternately connecting a plurality of back silver grid lines 3 and a plurality of back aluminum grid lines 4, a printing overlapping area 6 is arranged at the joint of the back silver grid lines 3 and the back aluminum grid lines 4, the back silver grid lines 3 and the back aluminum grid lines 4 can be ensured to be better connected, and the back silver grid lines 3 which are adjacent up and down are connected through metal welding wires 5;
as shown in the attached drawing 5 of the specification, one end of a back grid line 2 is set as a back silver grid line 3, the other end of the back grid line is set as a back aluminum grid line 4, the back grid line 2 is in contact with a cell frame at two ends, one end of the back grid line is the back silver grid line 3, the other end of the back grid line is the back aluminum grid line 4, one side of the back grid line 2 is arranged at intervals between the back silver grid line 3 and the back aluminum grid line 4 from top to bottom, the right side or the left side of the back grid line 2 and a connecting end of the frame are the back silver grid line 3 and the back aluminum grid line 4 which are sequentially and alternately arranged, the adjacent back silver grid lines 3 in the up and down.
A method of making a PERC bifacial battery comprising the steps of:
1) a single polycrystalline silicon wafer is subjected to surface texturing to obtain a good textured structure, so that the specific surface area is increased, more photons and energy can be received, and the reflection of incident light is reduced;
2) the residual liquid during the texturing is cleaned, so that the influence of acidic and alkaline substances on the battery knot making is reduced;
3) phosphorus atoms are obtained by reacting phosphorus oxychloride with the silicon wafer, and after a certain period of time, the phosphorus atoms enter the surface layer of the silicon wafer and permeate and diffuse into the silicon wafer through gaps among the silicon atoms to form an interface of an N-type semiconductor and a P-type semiconductor, thereby completing the diffusion and junction making process, realizing the conversion from light energy to electric energy and increasing the SE process flow;
4) because the diffusion junction forms a short circuit channel at the edge of the silicon wafer, photo-generated electrons collected by the front surface of the PN junction flow to the back surface of the PN junction along the region with phosphorus diffused at the edge to cause short circuit, the PN junction at the edge is etched and removed through plasma etching, and the edge is prevented from causing short circuit;
5) the diffusion junction making process can form a layer of phosphorosilicate glass on the surface of the silicon wafer, and the influence on the efficiency of the laminated tile battery is reduced through the phosphorosilicate glass removing process;
6) laminating an aluminum oxide passivation layer with a certain thickness on the back of the battery by adopting an A L D or PERC mode;
7) in order to protect the passivation layer, one or more layers of silicon nitride antireflection films are required to be deposited on the back surface, and the antireflection film preparation is completed through a PECVD (plasma enhanced chemical vapor deposition) working procedure;
8) reducing reflection, improving passivation, depositing one or more layers of silicon nitride antireflection films on the front surface of the cell, and completing the process through a PECVD chemical vapor deposition process;
9) according to the grid line graph of the back of the battery piece, carrying out laser grooving on the back of the battery, and carrying out laser processing on a corresponding position to obtain a positioning Marking point 7;
10) as shown in the attached figure 6 of the specification, a CCD camera is used for capturing and positioning a Marking point 7, and a back silver grid line 3 is printed in a precise alignment mode through a printing screen and the positioning Marking point 7;
11) as shown in the attached figure 7 of the specification, capturing a printed positioning Marking point 7 by using two CCD cameras, performing precision contraposition printing on a back aluminum grid line 4 by using two printing screen plates and the positioning Marking point 7, and ensuring that the back aluminum grid line 4 and a back silver grid line 3 are mutually connected in a printing way;
12) and printing a front grid line 1 on the front surface of the battery, and performing a sintering test.
A packaging process of a PERC double-sided battery assembly is used for a PERC double-sided battery and comprises the following steps:
1) as shown in the accompanying fig. 9 and 11 of the specification, one end of a metal bonding wire 5 is used for carrying out counterpoint interconnection with a back silver grid line 3 of a battery, and the other end of the metal bonding wire 5 is interconnected with a front grid line 1 of another battery;
2) connecting the positive electrode and the negative electrode of the battery piece in sequence to form a battery string, and typesetting and laminating the battery string;
3) and laminating the laminated battery strings, and framing and testing the laminated pieces to finish the assembly packaging and manufacturing.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (9)
1. The utility model provides a PERC double-sided battery, includes a plurality of positive grid lines (1) of setting at the battery is positive and sets up a plurality of back grid lines (2) at the battery back, its characterized in that: the back grid lines (2) are distributed at intervals transversely, and the back grid lines (2) are formed by alternately connecting a plurality of back silver grid lines (3) and a plurality of back aluminum grid lines (4) to form a back structure of the PERC double-sided battery.
2. The PERC double sided battery of claim 1, wherein: and a printing overlapping region (6) is arranged at the joint of the back silver grid line (3) and the back aluminum grid line (4).
3. The PERC double sided battery of claim 1, wherein: and two ends of the back grid line (2) are both provided with back aluminum grid lines (4).
4. The PERC double sided battery of claim 1, wherein: and two ends of the back grid line (2) are both provided with back silver grid lines (3).
5. The PERC double sided battery of claim 1, wherein: one end of the back grid line (2) is set to be a back silver grid line (3), and the other end of the back grid line is set to be a back aluminum grid line (4).
6. The PERC double sided battery of claim 5, wherein: one side of the back grid lines (2) is provided with back silver grid lines (3) from top to bottom.
7. The PERC double sided battery of claim 5, wherein: one side of the back grid lines (2) is arranged at intervals of the back silver grid lines (3) and the back aluminum grid lines (4) from top to bottom.
8. A method of making the PERC bifacial battery of any one of claims 1 to 7, comprising the steps of:
1) a single polycrystalline silicon wafer is subjected to surface texturing to obtain a good textured structure;
2) cleaning residual liquid during the wool making;
3) reacting phosphorus oxychloride with the silicon wafer to obtain phosphorus atoms, wherein the phosphorus atoms enter the surface layer of the silicon wafer after a certain time and permeate and diffuse into the silicon wafer through gaps among the silicon atoms to form an interface of an N-type semiconductor and a P-type semiconductor;
4) etching and removing PN junctions at the edge through plasma etching, so as to avoid short circuit at the edge;
5) the diffusion junction making process can form a layer of phosphorosilicate glass on the surface of the silicon wafer, and the influence on the efficiency of the laminated tile battery is reduced through the phosphorosilicate glass removing process;
6) laminating an aluminum oxide passivation layer with a certain thickness on the back of the battery by adopting an A L D or PERC mode;
7) depositing one or more layers of silicon nitride antireflection films on the back surface, and completing the preparation of the antireflection films through a PECVD (plasma enhanced chemical vapor deposition) process;
8) depositing one or more layers of silicon nitride antireflection films on the front surface of the cell, and completing the silicon nitride antireflection films through a PECVD (plasma enhanced chemical vapor deposition) process;
it is characterized by also comprising:
9) carrying out laser grooving on the back of the battery, and carrying out laser processing on a corresponding position to obtain a positioning Marking point (7);
10) capturing and positioning a Marking point (7) by using a CCD camera, and performing precision contraposition printing on the back silver grid line (3) through a printing screen and the positioning Marking point (7);
11) capturing the printed positioning Marking points (7) by using two CCD cameras, performing precision contraposition printing on the back aluminum grid lines (4) through two printing screen plates and the positioning Marking points (7), and ensuring that the back aluminum grid lines (4) and the back silver grid lines (3) are alternately connected;
12) and printing a front grid line (1) on the front surface of the battery, and performing a sintering test.
9. A PERC double sided battery pack encapsulation process for a PERC double sided battery according to any one of claims 1 to 7, comprising the steps of:
1) one end of a metal welding wire (5) is aligned and interconnected with the back silver grid line (3) of the battery, and the other end of the metal welding wire (5) is interconnected with the front grid line (1) of the other battery;
2) connecting the positive electrode and the negative electrode of the battery piece in sequence to form a battery string, and typesetting and laminating the battery string;
3) and laminating the laminated battery strings, and framing and testing the laminated pieces to finish the assembly packaging and manufacturing.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010287915.0A CN111446323A (en) | 2020-04-14 | 2020-04-14 | PERC double-sided battery and manufacturing method and packaging process thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115020523A (en) * | 2022-06-29 | 2022-09-06 | 浙江晶科能源有限公司 | Solar cell unit, preparation method thereof and solar cell module |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115020523A (en) * | 2022-06-29 | 2022-09-06 | 浙江晶科能源有限公司 | Solar cell unit, preparation method thereof and solar cell module |
| CN115020523B (en) * | 2022-06-29 | 2023-09-12 | 浙江晶科能源有限公司 | Solar cell unit, preparation method thereof and solar cell module |
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