CN111435667B - 图像传感器 - Google Patents
图像传感器 Download PDFInfo
- Publication number
- CN111435667B CN111435667B CN201911091800.8A CN201911091800A CN111435667B CN 111435667 B CN111435667 B CN 111435667B CN 201911091800 A CN201911091800 A CN 201911091800A CN 111435667 B CN111435667 B CN 111435667B
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- China
- Prior art keywords
- semiconductor layer
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- image sensor
- light shielding
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020190003842A KR102651605B1 (ko) | 2019-01-11 | 2019-01-11 | 이미지 센서 |
| KR10-2019-0003842 | 2019-01-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111435667A CN111435667A (zh) | 2020-07-21 |
| CN111435667B true CN111435667B (zh) | 2025-01-07 |
Family
ID=71517835
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911091800.8A Active CN111435667B (zh) | 2019-01-11 | 2019-11-08 | 图像传感器 |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US11355541B2 (https=) |
| JP (1) | JP7479850B2 (https=) |
| KR (1) | KR102651605B1 (https=) |
| CN (1) | CN111435667B (https=) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11018174B2 (en) * | 2018-01-22 | 2021-05-25 | Semiconductor Components Industries, Llc | Apparatus and method related to sensor die ESD protection |
| JP7645477B2 (ja) | 2019-10-28 | 2025-03-14 | パナソニックＩｐマネジメント株式会社 | 撮像装置 |
| US11450700B2 (en) | 2020-07-29 | 2022-09-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor image sensor pixel isolation structure for reducing crosstalk |
| KR102868200B1 (ko) * | 2020-10-06 | 2025-10-02 | 삼성전자주식회사 | 이미지 센서 |
| KR102853750B1 (ko) * | 2021-01-04 | 2025-09-01 | 삼성전자주식회사 | 이미지 센서 |
| US12278250B2 (en) | 2021-01-08 | 2025-04-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device including image sensor and method of forming the same |
| US11901387B2 (en) * | 2021-02-26 | 2024-02-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Image sensor |
| US12183749B2 (en) * | 2021-03-09 | 2024-12-31 | Sharp Kabushiki Kaisha | Photoelectric conversion device and X-ray imaging device |
| KR20220149127A (ko) * | 2021-04-30 | 2022-11-08 | 삼성전자주식회사 | 이미지 센서 |
| KR20220152484A (ko) | 2021-05-07 | 2022-11-16 | 삼성전자주식회사 | 이미지 센서 |
| KR102932488B1 (ko) | 2021-06-25 | 2026-02-26 | 삼성전자주식회사 | 적층 구조의 이미지 센서 |
| US20240194703A1 (en) * | 2021-06-25 | 2024-06-13 | Beijing Boe Sensor Technology Co., Ltd. | Photoelectric sensor, image sensor and electronic device |
| KR102938636B1 (ko) * | 2021-08-05 | 2026-03-12 | 삼성전자주식회사 | 이미지 센서 |
| US20230082000A1 (en) * | 2021-09-16 | 2023-03-16 | Au Optronics Corporation | Display apparatus |
| KR20230136299A (ko) | 2022-03-18 | 2023-09-26 | 삼성전자주식회사 | 이미지 센서 |
| KR20230138186A (ko) * | 2022-03-23 | 2023-10-05 | 삼성전자주식회사 | Cmos 이미지 센서 |
| US20240038818A1 (en) * | 2022-07-29 | 2024-02-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and methods of manufacturing |
| US20240194716A1 (en) * | 2022-12-08 | 2024-06-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Tapered backside ground structure for pixel array |
| KR20240109003A (ko) * | 2023-01-03 | 2024-07-10 | 에스케이하이닉스 주식회사 | 이미지 센싱 장치 및 그 제조 방법 |
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| JP2006261638A (ja) * | 2005-02-21 | 2006-09-28 | Sony Corp | 固体撮像装置および固体撮像装置の駆動方法 |
| US20090020838A1 (en) | 2007-07-17 | 2009-01-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for reducing optical cross-talk in image sensors |
| JP5521312B2 (ja) | 2008-10-31 | 2014-06-11 | ソニー株式会社 | 固体撮像装置及びその製造方法、並びに電子機器 |
| KR101688084B1 (ko) | 2010-06-30 | 2016-12-20 | 삼성전자주식회사 | 이미지 센서 및 이를 포함하는 패키지 |
| JP5640630B2 (ja) | 2010-10-12 | 2014-12-17 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法、及び電子機器 |
| JP6299058B2 (ja) | 2011-03-02 | 2018-03-28 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法及び電子機器 |
| US8890273B2 (en) | 2012-01-31 | 2014-11-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and apparatus for an improved reflectivity optical grid for image sensors |
| US9219092B2 (en) | 2012-02-14 | 2015-12-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Grids in backside illumination image sensor chips and methods for forming the same |
| US9455288B2 (en) | 2012-05-21 | 2016-09-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Image sensor structure to reduce cross-talk and improve quantum efficiency |
| US9299740B2 (en) | 2012-05-31 | 2016-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Image sensor with low step height between back-side metal and pixel array |
| US9349769B2 (en) | 2012-08-22 | 2016-05-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Image sensor comprising reflective guide layer and method of forming the same |
| US9591242B2 (en) | 2013-01-31 | 2017-03-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Black level control for image sensors |
| KR102011102B1 (ko) | 2013-03-13 | 2019-08-14 | 삼성전자주식회사 | 이미지 센서 |
| US9490288B2 (en) | 2013-03-15 | 2016-11-08 | Taiwan Semiconductor Manufacturing Company Limited | Image sensor with trenched filler grid within a dielectric grid including a reflective portion, a buffer and a high-K dielectric |
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| JP6652285B2 (ja) | 2015-08-03 | 2020-02-19 | キヤノン株式会社 | 固体撮像装置 |
| JP6668036B2 (ja) | 2015-10-14 | 2020-03-18 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子及びその製造方法、並びに、撮像装置及びその製造方法 |
| KR20170087580A (ko) * | 2016-01-20 | 2017-07-31 | 삼성전자주식회사 | 이미지 센서 및 이를 제조하는 방법 |
| US9917121B2 (en) * | 2016-03-24 | 2018-03-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | BSI image sensor and method of forming same |
| KR102539472B1 (ko) * | 2016-07-13 | 2023-06-02 | 삼성전자주식회사 | 이미지 센서 제조 방법 |
| JP2018019139A (ja) | 2016-07-25 | 2018-02-01 | キヤノン株式会社 | 撮像装置及び撮像装置の制御方法 |
| KR102600673B1 (ko) | 2016-08-05 | 2023-11-13 | 삼성전자주식회사 | 이미지 센서 |
| KR102589016B1 (ko) * | 2016-08-25 | 2023-10-16 | 삼성전자주식회사 | 반도체 소자 |
| US10163952B2 (en) | 2016-12-14 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Backside illuminated image sensor device structure |
-
2019
- 2019-01-11 KR KR1020190003842A patent/KR102651605B1/ko active Active
- 2019-11-08 CN CN201911091800.8A patent/CN111435667B/zh active Active
- 2019-12-11 US US16/711,295 patent/US11355541B2/en active Active
-
2020
- 2020-01-08 JP JP2020001233A patent/JP7479850B2/ja active Active
-
2022
- 2022-05-09 US US17/739,640 patent/US11784202B2/en active Active
-
2023
- 2023-09-20 US US18/470,972 patent/US12349489B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US11784202B2 (en) | 2023-10-10 |
| JP2020113762A (ja) | 2020-07-27 |
| US20240014235A1 (en) | 2024-01-11 |
| US12349489B2 (en) | 2025-07-01 |
| KR102651605B1 (ko) | 2024-03-27 |
| KR20200087909A (ko) | 2020-07-22 |
| US20200227455A1 (en) | 2020-07-16 |
| US20220262840A1 (en) | 2022-08-18 |
| US11355541B2 (en) | 2022-06-07 |
| CN111435667A (zh) | 2020-07-21 |
| JP7479850B2 (ja) | 2024-05-09 |
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