CN111432544A - Combined laser plasma back-conduction system and method - Google Patents
Combined laser plasma back-conduction system and method Download PDFInfo
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- CN111432544A CN111432544A CN202010250694.XA CN202010250694A CN111432544A CN 111432544 A CN111432544 A CN 111432544A CN 202010250694 A CN202010250694 A CN 202010250694A CN 111432544 A CN111432544 A CN 111432544A
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
Abstract
The invention relates to a combined laser plasma back-conduction system and a method. The system comprises at least one femtosecond laser used for starting plasma, a nanosecond laser used for stabilizing the plasma, a reflecting mirror used for reflecting the femtosecond laser and a coupling mirror used for laser coupling, and the method comprises the following steps of 1: starting a femtosecond laser device according to femtosecond starting parameters to generate femtosecond laser, so as to form a plasma channel in the air; step 2: repeatedly refreshing a plasma channel by using a femtosecond laser according to a preset femtosecond repetition frequency; and step 3: the nanosecond laser is started according to the nanosecond starting parameters to generate nanosecond laser, and the nanosecond laser is coupled with the femtosecond laser through the coupling mirror and then acts on the plasma channel; and 4, step 4: the method and the device have the advantages that the nanosecond laser is used for refreshing the plasma channel repeatedly according to the preset nanosecond repetition frequency, so that the stability of the plasma channel can be improved, the service life of the plasma channel can be prolonged, and a continuous plasma region with a large region can be formed.
Description
Technical Field
The invention relates to the technical field of laser optoelectronic equipment, in particular to a combined laser plasma back-conduction system and a method.
Background
When sufficient energy is input to any substance, such as heat, the substance is vaporized, then molecular atoms are ionized, and finally a charged gas with a certain ratio of positive ions, negative ions and electrons is formed, and the substance is a plasma. The special properties and the application of the plasma are highly emphasized by various countries, and with the gradual and deep research, bright flash and a loud sound similar to a dizzy grenade are generated in the plasma cloud generation process, so that a human body is greatly painful, various energies including laser, microwave and the like can be effectively absorbed, and the application space of the plasma is further expanded.
Nowadays, with the development of laser technology, intensities greater than 10 are readily available in laboratories13W/cm2Such that high intensity laser pulses readily ionize the atmosphere and the resulting plasma channel can travel distances in air of hundreds of meters or even kilometers.
The plasma has a negative refractive index characteristic, and its effect on the transmission of the laser beam is equivalent to inserting a negative lens in the optical path, causing the laser beam to diverge (defocusing effect). Self-focusing and plasma defocusing caused by the optical Kerr effect when the focused femtosecond laser pulse is transmitted in the atmosphere can be balanced by controlling experimental conditions, a self-sustained long-distance plasma filament is generated, and the diameter of the plasma filament formed by the focused femtosecond laser pulse in the atmosphere is about 100-200 mu m. After the atmospheric plasma channel is formed, the electron density in the channel is reduced quickly due to the recombination of electrons and ions, the adsorption of electrons and neutral molecules and the like, the service life of the plasma channel generated by a single femtosecond laser pulse is only a few nanoseconds generally, and the formed plasma area is very small due to the short service life of the channel, so that a larger plasma area cannot be formed
Disclosure of Invention
The embodiment of the invention provides a combined laser plasma back-conduction system and a method, which can improve the stability of a plasma channel and prolong the service life of the plasma channel, thereby forming a continuous plasma region with a larger region.
In a first aspect, embodiments of the present invention provide a combined laser plasma reverse guiding system, which includes at least one femtosecond laser for starting plasma, a nanosecond laser for stabilizing plasma, a mirror for reflecting the femtosecond laser, and a coupling mirror for laser coupling.
Further, the reflection system further comprises a zoom lens group for adjusting laser convergence.
In a second aspect, the present invention provides a method for combined laser plasma reverse guiding, which uses the reverse guiding system of the first aspect, and includes the following steps:
step 1: starting a femtosecond laser device according to femtosecond starting parameters to generate femtosecond laser, wherein the femtosecond laser forms a plasma channel in the air;
step 2: repeatedly refreshing the plasma channel formed in the step 1 by utilizing a femtosecond laser according to a preset femtosecond repetition frequency;
and step 3: a nanosecond laser is started according to the nanosecond starting parameters to generate nanosecond laser, and the nanosecond laser is coupled with the femtosecond laser in the step 1 through a coupling mirror and then acts on a plasma channel;
and 4, step 4: and repeatedly refreshing the plasma channel by using a nanosecond laser according to a preset nanosecond repetition frequency.
Further, the femtosecond laser is single pulse laser, the starting parameter is E ═ 100mJ, and P is less than 10 ns; the nanosecond laser is single-pulse laser, the starting parameter is E-10J, and P is more than or equal to 10ns and less than or equal to P
100 ns; wherein E is laser energy; and P is the laser pulse width.
Further, the pulse gap time of the femtosecond laser is S1，S2Is a decay time S of the plasma2And S1＜S2。
Further, the femtosecond repetition frequency is V1Nanosecond repetition frequency of V2And V is1＞
1000Hz，10Hz≤V2≤50Hz。
Further, the laser coupled in the step 3 passes through a zoom lens group and acts on a plasma channel.
In summary, the invention adopts a femtosecond and nanosecond double-pulse combined laser mechanism to generate plasma, transfers energy to electrons in a channel by using the repeated refreshing of the frequency of the femtosecond laser and the inverse toughness induced absorption of the nanosecond laser so as to keep the stability and the service life of a plasma region, further increases the laser power density in the plasma region by controlling the convergence position of two light beams by using a zoom lens group, and forms a larger plasma region, and the system has the advantages of smaller weight and power consumption.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments of the present invention will be briefly described below, and it is obvious that the drawings described below are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic view of a plasma distribution when the femtosecond pulse gap time is greater than the decay time of the plasma;
FIG. 2 is a schematic diagram of a plasma distribution when the femtosecond pulse gap time is less than the decay time of the plasma;
fig. 3 is a schematic structural diagram of the back-leading system of the present invention.
Detailed Description
The embodiments of the present invention will be described in further detail with reference to the drawings and examples. The following detailed description of the embodiments and the accompanying drawings are provided to illustrate the principles of the invention and are not intended to limit the scope of the invention, i.e., the invention is not limited to the embodiments described, but covers any modifications, alterations, and improvements in the parts, components, and connections without departing from the spirit of the invention.
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present application will be described in detail below with reference to the embodiments with reference to the attached drawings.
Fig. 1 to 3 show a first aspect of an embodiment of the present invention, which proposes a combined laser plasma reverse guiding system, including at least one femtosecond laser for starting plasma, a nanosecond laser for stabilizing plasma, a mirror for reflecting the femtosecond laser, and a coupling mirror for laser coupling.
In order to increase the laser power density in the plasma region and further increase the area of the plasma region, in a specific embodiment of the invention, the retro-reflection system further comprises a zoom lens group for adjusting laser convergence, and the coupling laser power density after passing through the zoom lens group is increased, so that the stability and the service life of a plasma channel are enhanced on one hand, and a larger plasma region can be formed on the other hand.
In a second aspect, the present invention provides a method for combined laser plasma reverse guiding, which uses the reverse guiding system of the first aspect, and includes the following steps:
step 1: starting a femtosecond laser device according to femtosecond starting parameters to generate femtosecond laser, wherein the femtosecond laser forms a plasma channel in the air;
step 2: repeatedly refreshing the plasma channel formed in the step 1 by utilizing a femtosecond laser according to a preset femtosecond repetition frequency;
and step 3: a nanosecond laser is started according to nanosecond starting parameters to generate nanosecond laser, the nanosecond laser is coupled with the femtosecond laser in the step 1 through a coupling mirror and then acts on a plasma channel, the nanosecond laser ionizes air to generate plasma on one hand, and on the other hand, energy is transferred to electrons in the channel through a reverse toughening absorption effect;
and 4, step 4: and repeatedly refreshing the plasma channel by using a nanosecond laser according to a preset nanosecond repetition frequency.
As a specific embodiment of the present invention, the femtosecond laser is a single-pulse laser, and the starting parameter is E ═ 100mJ, and P is less than 10 ns; the nanosecond laser is single-pulse laser, the starting parameter is E-10J, and P is more than or equal to 10ns and less than or equal to 100 ns; wherein E is laser energy; and P is the laser pulse width.
As an embodiment of the present invention, the femtosecond laser has a pulse gap time S1，S2Is a decay time S of the plasma2When S is1＞S2When the plasma formed by each laser pulse is relatively independent, as shown in fig. 1, a virtual channel is formed between the plasmas, so that the plasma channel is not conductive, and when S is used1＜S2The plasmas formed by the individual laser pulses are interconnected to form a conductive plasma channel.
As an embodiment of the present invention, a method for making a semiconductor device,the femtosecond repetition frequency is V1Nanosecond repetition frequency of V2And V is1＞1000Hz，10Hz≤V2≤50Hz。
As an embodiment of the present invention, the laser coupled in step 3 passes through a zoom lens set and acts on a plasma channel.
It should be clear that the embodiments in this specification are described in a progressive manner, and the same or similar parts in the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. For embodiments of the method, reference is made to the description of the apparatus embodiments in part. The present invention is not limited to the specific steps and structures described above and shown in the drawings. Also, a detailed description of known process techniques is omitted herein for the sake of brevity.
The above description is only an example of the present application and is not limited to the present application. Various modifications and alterations to this application will become apparent to those skilled in the art without departing from the scope of this invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.
Claims (7)
1. The combined laser plasma back-conduction system is characterized by comprising at least one femtosecond laser used for starting plasma, a nanosecond laser used for stabilizing the plasma, a reflecting mirror used for reflecting the femtosecond laser and a coupling mirror used for laser coupling.
2. The combined laser plasma reverse guiding system of claim 1, further comprising a zoom lens set for adjusting the convergence of the laser light.
3. A combined laser plasma reverse guiding method using the reverse guiding system as claimed in any one of claims 1 and 2, comprising the steps of:
step 1: starting a femtosecond laser device according to femtosecond starting parameters to generate femtosecond laser, wherein the femtosecond laser forms a plasma channel in the air;
step 2: repeatedly refreshing the plasma channel formed in the step 1 by utilizing a femtosecond laser according to a preset femtosecond repetition frequency;
and step 3: a nanosecond laser is started according to the nanosecond starting parameters to generate nanosecond laser, and the nanosecond laser is coupled with the femtosecond laser in the step 1 through a coupling mirror and then acts on a plasma channel;
and 4, step 4: and repeatedly refreshing the plasma channel by using a nanosecond laser according to a preset nanosecond repetition frequency.
4. The combined laser plasma reverse guiding method according to claim 3, wherein the femtosecond laser is a single pulse laser and the start-up parameter is E-100 mJ, P < 10 ns; the nanosecond laser is single-pulse laser, the starting parameter is E-10J, and P is more than or equal to 10ns and less than or equal to 100 ns; wherein E is laser energy; and P is the laser pulse width.
5. The combined laser plasma reverse guiding method as claimed in claim 3, wherein the femtosecond laser has a pulse gap time S1，S2Is a decay time S of the plasma2And S1＜S2。
6. The combined laser plasma reverse conducting method according to claim 3, wherein the femtosecond repetition frequency is V1Nanosecond repetition frequency of V2And V is1＞1000Hz，10Hz≤V2≤50Hz。
7. The combined laser plasma reverse guiding method according to claim 3, wherein the laser coupled in step 3 passes through a zoom lens set and acts on the plasma channel.
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