CN111427232A - Screen display precision improving method - Google Patents
Screen display precision improving method Download PDFInfo
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- CN111427232A CN111427232A CN202010343259.1A CN202010343259A CN111427232A CN 111427232 A CN111427232 A CN 111427232A CN 202010343259 A CN202010343259 A CN 202010343259A CN 111427232 A CN111427232 A CN 111427232A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
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Abstract
The embodiment of the invention provides a screen display precision improving method, wherein at least one first exposure mark pattern and at least one second exposure mark pattern are arranged on each layer of photomask; sequentially exposing the deposition layer by using each layer mask to form a first exposure mark, a second exposure mark and an exposure area; and acquiring the relative offset between the first exposure mark and the second exposure mark, and adjusting the parameters of the exposure area, thereby improving the precision of a splicing area and avoiding the problems of uneven brightness, various visible traces and the like.
Description
Technical Field
The invention relates to the technical field of screen display, in particular to a screen display precision improving method.
Background
With the improvement of living standard of people and the combination of daily demands of people, an array exposure production line develops towards the trend of large size and high definition, wherein the array exposure production line becomes the bottleneck of large size and high definition products in terms of capacity and quality, when the panel display is completed by using an array exposure machine, because the array exposure opportunity is limited by the machine type, a splicing function is needed when the products of large size screens are produced, as shown in fig. 1, a first exposure area and a second exposure area are formed by exposing small-size exposure area patterns on a photomask for two times or even for multiple times, and are spliced and combined to form a complete large-size display pattern on a large-size glass substrate, wherein the overlapping part of the first exposure area and the second exposure area is a splicing area. In the process of research and practice of the prior art, the inventor of the present invention finds that, in the process of forming a large-size exposure area on a large-size glass substrate by splicing by using a small-area exposure pattern on a photomask through two or even multiple exposures, as shown in fig. 2, a position precision difference occurs in a spliced area, so that the brightness of the spliced area on a display product is easily uneven, and various visible traces are generated.
Disclosure of Invention
The embodiment of the invention provides a screen display precision improving method, wherein a first exposure mark pattern and a second exposure mark pattern are arranged on each layer of photomask, so that the precision of a splicing area is improved, and the problems of uneven brightness, various visible marks and the like are avoided.
The embodiment of the invention provides a method for improving screen display precision, which comprises the following steps:
setting at least one first exposure mark pattern and at least one second exposure mark pattern on each layer of photomask;
sequentially exposing the deposition layer by using each layer mask to form a first exposure mark, a second exposure mark and an exposure area;
and acquiring the relative offset between the first exposure mark and the second exposure mark, and adjusting the parameter of the exposure area.
Optionally, in some embodiments of the present invention, the sequentially exposing the deposition layer by using the respective layer masks to form a first exposure mark, a second exposure mark and an exposure area includes:
exposing the same deposition layer, and performing first exposure to form a first exposure mark and a first exposure area;
and the second exposure forms the second exposure mark and a second exposure area.
Optionally, in some embodiments of the present invention, the exposing the same deposition layer, and the first exposing to form the first exposure mark and the first exposure region, includes:
the light source develops the light resistance layer on the deposition layer through the light shield, the first exposure mark is positioned in the non-display area of the deposition layer, and the first exposure area is positioned in the display area of the deposition layer.
Optionally, in some embodiments of the present invention, the second exposing to form the second exposed mark and the second exposed area includes:
the light source develops the photoresist layer on the deposition layer through the photomask, the second exposure mark is positioned in the non-display area of the deposition layer, and the second exposure area is positioned in the display area of the deposition layer.
Optionally, in some embodiments of the present invention, the first exposure mark pattern and the second exposure mark pattern have different light transmittances.
Optionally, in some embodiments of the present invention, an overlapping portion of the first exposure region and the second exposure region is a splicing region, and the first exposure mark and the second exposure mark are located on an outer edge of the same side of the splicing region.
Optionally, in some embodiments of the present invention, the first exposure mark comprises the second exposure mark.
Optionally, in some embodiments of the present invention, the first exposure mark and the second exposure mark are in a regular pattern, and an area of the first exposure mark is larger than an area of the second exposure mark.
Optionally, in some embodiments of the present invention, the acquiring a relative offset between the first exposure mark and the second exposure mark includes:
acquiring a first central point of the first exposure mark and a second central point of the second exposure mark;
measuring a horizontal distance difference value of the first central point and the second central point in the horizontal direction;
and measuring the vertical distance difference of the first central point and the second central point in the vertical direction.
Optionally, in some embodiments of the present invention, the adjusting the parameter of the exposure area includes:
and according to the horizontal distance difference and the vertical distance difference, carrying out translation and/or scaling and/or integral rotation and/or unilateral rotation on the exposure area.
The embodiment of the invention provides a screen display precision improving method, wherein each layer of photomask is provided with at least one first exposure mark pattern and at least one second exposure mark pattern, each layer of photomask corresponds to a deposition layer, the deposition layers are sequentially exposed by using each layer of photomask, at least two exposures are carried out on the corresponding deposition layer to form a first exposure mark, a second exposure mark and an exposure area, the first exposure is carried out to form the first exposure mark and the first exposure area pattern on the corresponding deposition layer, then the second exposure is carried out to form the second exposure mark and the second exposure area pattern on the corresponding deposition layer, the relative offset between the first exposure mark and the second exposure mark is obtained, the parameter of the exposure area is adjusted to improve the precision of the splicing area of the deposition layer corresponding to the photomask, and then the other deposition layers are sequentially exposed by using another photomask, the accuracy of the splicing area of the deposition layer corresponding to each layer of light shield is improved, and the screen display accuracy of the splicing area is improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic view of a scenario for splicing large-size display products according to an embodiment of the present invention;
FIG. 2 is a schematic view of a scene with a difference in position accuracy of a splicing area according to an embodiment of the present invention;
FIG. 3 is a schematic view of a scene of a large-sized product formed by two-exposure stitching according to an embodiment of the present invention;
FIG. 4 is a flowchart illustrating a method for improving the accuracy of a screen display according to an embodiment of the present invention;
FIG. 5 is a schematic diagram illustrating positions of a first exposure mark and a second exposure mark on a deposition layer according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of positions of a first exposure mark and a second exposure mark provided by an embodiment of the present invention;
FIG. 7 is a schematic flowchart of another method for improving the accuracy of a screen display according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of the positions of the first left exposure mark, the first right exposure mark, the second left exposure mark and the second right exposure mark on the deposition layer according to an embodiment of the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The embodiment of the invention provides a screen display precision improving method. Wherein the method can be applied and practiced on a Nikon array exposure machine.
For example, as shown in fig. 3, a plurality of reticles are used to perform multiple exposures on a deposition layer corresponding to each reticle, the reticles include two types of exposure area patterns, the first exposure area pattern has a size of 32 inches and is used to form a 32-inch exposure area on the deposition layer, the second exposure area pattern is used to form a 65-inch exposure area on the deposition layer through two or more exposures and splices, a first exposure mark pattern and a second exposure mark pattern are arranged on the reticles, the second exposure area pattern on the reticles is used to perform a first exposure, the first exposure mark pattern on the reticles is simultaneously exposed, a first exposure mark and a first exposure area are formed on the deposition layer corresponding to the reticles, after the first exposure is completed, the deposition layer is moved, and then the first exposure area and the second exposure area on the reticles are used to perform a second exposure, simultaneously exposing a second exposure mark on the photomask, forming a second exposure mark and a second exposure area on a deposition layer corresponding to the photomask, wherein the overlapped part of the first exposure area and the second exposure area is a splicing area, splicing the second exposure area pattern to form a 65-inch exposure area on the corresponding deposition layer after twice exposure, exposing the first exposure area pattern once, forming a 32-inch exposure area on the corresponding deposition layer, thereby forming a large-size exposure area on the corresponding deposition layer, wherein the first exposure mark and the second exposure mark are positioned in a non-display area of the deposition layer, the first exposure area and the second exposure area are positioned in a display area of the deposition layer, the shapes of the first exposure mark and the second exposure mark are regular graphs, and because the light transmittances of the first exposure mark pattern and the second exposure mark pattern on the photomask are different, therefore, after the photomask is exposed twice, two regular graphs with different colors are generated on the corresponding deposition layer, namely a first exposure mark and a second exposure mark respectively, the first exposure mark comprises the second exposure mark, a first central point of the first exposure mark and a second central point of the second exposure mark are obtained, a horizontal distance difference value of the first central point and the second central point in the horizontal direction is measured, a vertical distance difference value of the first central point and the second central point in the vertical direction is measured, the exposure area is translated and/or zoomed and/or integrally rotated and/or unilaterally rotated according to the horizontal distance difference value and the vertical distance difference value until the effect that the first central point of the first exposure mark and the second central point of the second exposure mark coincide is achieved, and after one photomask is used for exposing one deposition layer, and exposing the deposition layer corresponding to the photomask by using another photomask until all the deposition layers are exposed by using each photomask, thereby forming a final display product.
The following are detailed below. It should be noted that the following description of the embodiments is not intended to limit the preferred order of the embodiments.
This embodiment will be described from the perspective of the method of screen display's precision promotion, and this method of screen display's precision promotion specifically can be applied in array exposure production line, and this array exposure production line will use the exposure machine, and the exposure machine can include nian kang exposure machine, photosynthetic exposure machine, boggolino exposure machine and light beam exposure machine etc..
A method for improving the accuracy of screen display comprises the following steps: setting at least one first exposure mark pattern and at least one second exposure mark pattern on each layer of photomask; sequentially exposing the deposition layer by using each layer mask to form a first exposure mark, a second exposure mark and an exposure area; and acquiring the relative offset between the first exposure mark and the second exposure mark, and adjusting the parameter of the exposure area.
As shown in fig. 4, the specific flow of the method for improving the accuracy of screen display is as follows:
For example, in the process of manufacturing electronic components, a photomask forms a pattern on a semiconductor by utilizing a photoetching technology, and in order to copy the pattern onto a glass substrate, the principle of the action of the photomask must be transmitted, so that various patterns are arranged on the photomask, a light source is used for developing the pattern on a corresponding deposition layer, at least one first exposure mark pattern and at least one second exposure mark pattern are arranged on the photomask on the basis of the original exposure pattern, the light source is used for developing a photoresist layer on the photomask, the first exposure mark pattern on the photomask is developed on the corresponding deposition layer to form a first exposure mark, and the second exposure mark pattern on the photomask is also developed on the corresponding deposition layer to form a second exposure mark.
Optionally, the photomask comprises two types of exposure area patterns, wherein one type of exposure area pattern is 32 inches in size and is used for forming a 32-inch exposure area on the deposition layer, and the other type of exposure area pattern is used for forming a 65-inch exposure area on the deposition layer through two or more times of exposure splicing.
Optionally, the positions of the first exposure mark pattern and the second exposure mark pattern on each photomask are different according to the difference of the photomasks corresponding to each deposition layer, and the positions of the first exposure mark pattern and the second exposure mark pattern on each photomask are also different according to the difference of each produced display product.
For example, in the process of producing a large-screen display product, a plurality of light masks of each layer are required to expose the deposition layers corresponding to the light masks of each layer according to a certain manufacturing sequence, the first exposure mark patterns on the light masks of each layer correspondingly form first exposure marks on the deposition layers of each layer, the second exposure mark patterns on the light masks of each layer correspondingly form second exposure marks on the deposition layers of each layer, and the exposure area patterns on the light masks of each layer correspondingly form exposure areas on the deposition layers of each layer until all the deposition layers are exposed.
Each layer deposition layer comprises each layer functional layer and a light resistance layer on each layer functional layer, and each layer functional layer comprises a metal layer, a semiconductor layer and the like.
Optionally, the steps of exposing the deposition layer corresponding to each layer of photomask by using the photomask of each layer are the same, and since the size of the exposure region pattern on the photomask is smaller than that of the large-size display panel to be produced, for each deposition layer, two or even multiple exposures are performed by using the corresponding photomask to form one or more first exposure regions and one or more second exposure regions until all the first exposure regions and all the second exposure regions are spliced into a complete large-size exposure region on the large-size display panel, and the overlapping portion of the first exposure region and the second exposure region is a spliced region.
Optionally, referring to fig. 5, in the process of completing a complete large-sized exposure area through two exposure splices, when a mask is used to expose a deposition layer corresponding to the mask for the first time, a light source develops a photoresist layer on the deposition layer corresponding to the mask through the mask, a first exposure mark pattern on the mask forms a corresponding first exposure mark, an exposure area pattern on the mask forms a corresponding first exposure area, when the mask is used to expose the deposition layer corresponding to the mask for the second time, the light source develops the photoresist layer on the deposition layer corresponding to the mask through the mask, a second exposure mark pattern on the mask forms a corresponding second exposure mark, the exposure area pattern on the mask forms a corresponding second exposure area, an overlapping area between the first exposure area and the second exposure area is a spliced area, and the first exposure mark and the second exposure mark are located in a non-display area, the first exposure area and the second exposure area are located in a display area of the deposition layer, and the first exposure mark and the second exposure mark are located on the outer side edge of the same side of the splicing area.
Optionally, the light transmittances of the first exposure mark pattern and the second exposure mark pattern disposed on the mask are different, the shapes of the first exposure mark and the second exposure mark on the deposition layer are regular patterns, such as a rectangle, a cross, and the like, as shown in fig. 6, the shapes of the first exposure mark and the second exposure mark on the deposition layer are rectangles, the area of the first exposure mark is larger than the area of the second exposure mark, and the first exposure mark includes the second exposure mark.
Optionally, when the light shield is used for exposing the deposition layer corresponding to the light shield for the first time, the light source develops the photoresist layer on the deposition layer corresponding to the light shield through the light shield, the first exposure mark pattern on the light shield forms the corresponding first exposure mark, the exposure area pattern on the light shield forms the corresponding first exposure area, because the light transmittance of the first exposure mark pattern is different from that of the second exposure mark pattern, for example, the light transmittance of the first exposure mark pattern is fifty percent, and the light transmittance of the exposure area pattern is one hundred percent, the color of the first exposure mark on the deposition layer is darker than that of the first exposure area on the deposition layer, when the light shield is used for exposing the deposition layer corresponding to the light shield for the second time, the light source develops the photoresist layer on the deposition layer corresponding to the light shield through the light shield, and the second exposure mark pattern on the light shield forms the corresponding second exposure mark, the exposure area pattern on the photomask forms a corresponding second exposure area, the light transmittance of the second exposure mark pattern is also fifty percent, and the light transmittance of the second exposure area pattern is one hundred percent, so that the color of the second exposure area on the deposition layer is the same as the color of the first exposure area on the deposition layer, and the first exposure mark pattern comprises the second exposure mark pattern, so that the second exposure mark pattern is exposed twice, the effect of the transmitted light is consistent with that of the exposure area pattern, and the second exposure mark is the same as the colors of the first exposure area and the second exposure area on the deposition layer, so that the area of the first exposure mark is larger than that of the second exposure mark in order to see the first exposure mark and the second exposure mark on the deposition layer.
And 403, acquiring a relative offset between the first exposure mark and the second exposure mark, and adjusting parameters of the exposure area.
For example, a first center point of the first exposure mark and a second center point of the second exposure mark on the deposition layer are obtained, a horizontal distance difference between the first center point and the second center point in the horizontal direction is measured, a vertical distance difference between the first center point and the second center point in the vertical direction is measured, and parameters of the exposure area are adjusted according to the horizontal distance difference and the vertical distance difference.
Optionally, the middle points of the four sides of the first exposure mark are obtained, the middle points of the two groups of opposite sides are connected to each other to form two lines, the intersection point of the two lines is the first center point of the first exposure mark, similarly, the middle points of the four sides of the second exposure mark are obtained, the middle points of the two groups of opposite sides are connected to each other to form two lines, and the intersection point of the two lines is the second center point of the second exposure mark.
And adjusting parameters of the exposure area to perform translation and/or scaling and/or integral rotation and/or unilateral rotation on the exposure area according to the horizontal distance difference and the vertical distance difference until the display effect of the first central point and the second central point is that the first central point and the second central point are coincided.
Optionally, a horizontal distance difference between the first center point and the second center point in the horizontal direction is measured, a vertical distance difference between the first center point and the second center point in the vertical direction is measured, and if the horizontal distance difference and the vertical distance difference are both zero, parameters of the exposure area do not need to be adjusted, that is, the exposure area does not need to be translated and/or zoomed and/or rotated integrally and/or rotated unilaterally.
The method for improving the accuracy of the screen display according to the above embodiments will be described in further detail below.
Referring to fig. 7, fig. 7 is another flowchart illustrating a method for improving the accuracy of screen display according to an embodiment of the present invention. As shown in fig. 7, the flow of the method for improving the accuracy of the screen display may be as follows:
For example, the mask has various patterns including an exposure area pattern, and at least one first left-side exposure mark pattern, at least one second left-side exposure mark pattern, at least one first right-side exposure mark pattern and at least one second right-side exposure mark pattern are arranged on the mask based on the original pattern.
Optionally, the photomask comprises two types of exposure area patterns, wherein one type of exposure area pattern is 32 inches in size and is used for forming a 32-inch exposure area on the deposition layer, and the other type of exposure area pattern is used for forming a 65-inch exposure area on the deposition layer through two or more times of exposure splicing.
Optionally, according to the difference of the photo masks corresponding to the deposition layers, the positions of the first left exposure mark pattern, the second left exposure mark pattern, the first right exposure mark pattern and the second right exposure mark pattern on each photo mask are different, and according to the difference of each produced display product, the positions of the first left exposure mark pattern, the second left exposure mark pattern, the first right exposure mark pattern and the second right exposure mark pattern on each photo mask are also different.
And 702, exposing the deposition layer by sequentially utilizing the light masks of all the layers to form a first left exposure mark, a first right exposure mark, a second left exposure mark, a second right exposure mark and an exposure area.
For example, in the process of producing a large-screen display product, it is necessary to expose each respective deposition layer corresponding to each respective mask by using a plurality of respective masks according to a certain manufacturing order, a first left exposure mark pattern on each respective mask correspondingly forms a first left exposure mark on each respective deposition layer, a first right exposure mark pattern on each respective mask correspondingly forms a first right exposure mark on each respective deposition layer, a second left exposure mark pattern on each respective mask correspondingly forms a second left exposure mark on each respective deposition layer, a second right exposure mark pattern on each respective mask correspondingly forms a second right exposure mark on each respective deposition layer, an exposure area pattern on each respective mask correspondingly forms an exposure area on each respective deposition layer until all deposition layers are exposed.
Each layer deposition layer comprises each layer functional layer and a light resistance layer on each layer functional layer, and each layer functional layer comprises a metal layer, a semiconductor layer and the like.
Optionally, the steps of exposing the deposition layer corresponding to each layer of photomask by using the photomask of each layer are the same, and since the size of the exposure region pattern on the photomask is smaller than that of the corresponding large-size display panel to be produced, for each deposition layer, two or even multiple exposures are performed by using the corresponding photomask to form one or more first exposure regions and one or more second exposure regions until all the first exposure regions and all the second exposure regions are spliced into a complete large-size exposure region on the large-size display panel, and the overlapped part of the first exposure region and the second exposure region is a spliced region.
Optionally, in the process of completing a complete large-sized exposure area through two times of exposure and splicing, when a photomask is used for exposing a deposition layer corresponding to the photomask for the first time, the light source develops the photoresist layer on the deposition layer corresponding to the photomask through the photomask, a first left side exposure mark pattern on the photomask forms a corresponding first left side exposure mark, a second left side exposure mark pattern on the photomask forms a corresponding second left side exposure mark, an exposure area pattern on the photomask forms a corresponding first exposure area, when the photomask is used for exposing the deposition layer corresponding to the photomask for the second time, the light source develops the photoresist layer on the deposition layer corresponding to the photomask through the photomask, a first right side exposure mark pattern on the photomask forms a corresponding first right side exposure mark, a second right side exposure mark pattern on the photomask forms a corresponding second right side exposure mark, the exposure area pattern on the photomask forms a corresponding second exposure area, the overlapping area between the first exposure area and the second exposure area is a splicing area, the first left side exposure mark, the first right side exposure mark, the second left side exposure mark and the second right side exposure mark are located in a non-display area of the deposition layer, and the first exposure area and the second exposure area are located in a display area of the deposition layer.
Optionally, referring to fig. 8 together, the first left exposure mark and the second left exposure mark are located on the outer edges of two opposite sides of the splicing area, the first left exposure mark and the second left exposure mark do not belong to the left exposure area pattern and the right exposure area pattern, the first right exposure mark and the second right exposure mark are located on the outer edges of two opposite sides of the splicing area, the first right exposure mark and the second right exposure mark do not belong to the left exposure area pattern and the right exposure area pattern, the first left exposure mark and the first right exposure mark are located on the outer edge of the same side of the splicing area, and the second left exposure mark and the second right exposure mark are located on the outer edge of the other side of the splicing area.
Optionally, the light transmittance of the first left exposure mark pattern and the first right exposure mark pattern disposed on the mask is different, the light transmittance of the second left exposure mark pattern and the second right exposure mark pattern is different, the first left exposure mark, the first right exposure mark, and the second left exposure mark and the second right exposure mark are regular patterns, such as rectangles, crosses, and the like, the area of the first left exposure mark is larger than the area of the first right exposure mark, and the area of the second left exposure mark is larger than the area of the second right exposure mark.
For example, a first left center point of a first left exposure mark, a first right center point of the first right exposure mark, a second left center point of a second left exposure mark, and a second right center point of the second right exposure mark on the deposition layer are obtained, a first horizontal distance difference in the horizontal direction between the first left center point and the first right center point is measured, a first vertical distance difference in the vertical direction between the first left center point and the first right center point is measured, a second horizontal distance difference in the horizontal direction between the second left center point and the second right center point is measured, a second vertical distance difference in the vertical direction between the second left center point and the second right center point is measured, and adjusting parameters of the exposure area according to the first horizontal distance difference, the first vertical distance difference, the second horizontal distance difference and the second vertical distance difference.
The parameters of the exposure area are adjusted to be in translation and/or scaling and/or integral rotation and/or unilateral rotation on the exposure area according to the horizontal distance difference and the vertical distance difference until the display effect of the first left side central point and the first right side central point is that the first left side central point and the first right side central point coincide, the display effect of the second left side central point and the second right side central point is that the second left side central point and the second right side central point coincide, and the central points of the two coincident central points and the central point of the splicing area are on the same straight line.
Optionally, a first horizontal distance difference of the first left center point and the first right center point in the horizontal direction is measured to be zero, a first vertical distance difference of the first left center point and the first right center point in the vertical direction is measured to be zero, a second horizontal distance difference of the second left center point and the second right center point in the horizontal direction is measured to be zero, and a second vertical distance difference of the second left center point and the second right center point in the vertical direction is measured to be zero, so that parameters of the exposure area do not need to be adjusted, that is, the exposure area does not need to be translated and/or zoomed and/or rotated integrally and/or rotated unilaterally.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The method for improving the screen display precision provided by the embodiment of the invention is described in detail, a specific example is applied in the method for explaining the principle and the implementation mode of the invention, and the description of the embodiment is only used for helping to understand the technical scheme and the core idea of the invention; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (10)
1. A method for improving the accuracy of screen display is characterized by comprising the following steps:
setting at least one first exposure mark pattern and at least one second exposure mark pattern on each layer of photomask;
sequentially exposing the deposition layer by using each layer mask to form a first exposure mark, a second exposure mark and an exposure area;
and acquiring the relative offset between the first exposure mark and the second exposure mark, and adjusting the parameter of the exposure area.
2. The method of claim 1, wherein sequentially exposing the deposited layer with the respective layer masks to form a first exposure mark, a second exposure mark and an exposure area comprises:
exposing the same deposition layer, and performing first exposure to form a first exposure mark and a first exposure area;
and the second exposure forms the second exposure mark and a second exposure area.
3. The method of claim 2, wherein said exposing the same deposited layer, a first exposure forming the first exposed mark and a first exposed area, comprises:
the light source develops the light resistance layer on the deposition layer through the light shield, the first exposure mark is positioned in the non-display area of the deposition layer, and the first exposure area is positioned in the display area of the deposition layer.
4. The method of claim 2, wherein the second exposing forms the second exposed mark and a second exposed area, comprising:
the light source develops the photoresist layer on the deposition layer through the photomask, the second exposure mark is positioned in the non-display area of the deposition layer, and the second exposure area is positioned in the display area of the deposition layer.
5. The method according to any one of claims 1 to 4, wherein the first exposed marker pattern and the second exposed marker pattern differ in light transmittance.
6. The method according to claim 2, wherein the overlapping portion of the first exposure region and the second exposure region is a splicing region, and the first exposure mark and the second exposure mark are located on the same outer edge of the splicing region.
7. The method of claim 6, wherein the first exposure mark comprises the second exposure mark.
8. The method according to any one of claims 3 to 7, wherein the first exposure mark and the second exposure mark are in a regular pattern, and the area of the first exposure mark is larger than the area of the second exposure mark.
9. The method of claim 1, wherein obtaining the relative offset between the first exposure mark and the second exposure mark comprises:
acquiring a first central point of the first exposure mark and a second central point of the second exposure mark;
measuring a horizontal distance difference value of the first central point and the second central point in the horizontal direction;
and measuring the vertical distance difference of the first central point and the second central point in the vertical direction.
10. The method of claim 9, wherein the adjusting the parameters of the exposure area comprises:
and according to the horizontal distance difference and the vertical distance difference, carrying out translation and/or scaling and/or integral rotation and/or unilateral rotation on the exposure area.
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| CN202010343259.1A CN111427232A (en) | 2020-04-27 | 2020-04-27 | Screen display precision improving method |
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| CN202010343259.1A CN111427232A (en) | 2020-04-27 | 2020-04-27 | Screen display precision improving method |
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| CN202010343259.1A Pending CN111427232A (en) | 2020-04-27 | 2020-04-27 | Screen display precision improving method |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105929639A (en) * | 2016-06-29 | 2016-09-07 | 武汉华星光电技术有限公司 | Method for improving lens mura of exposure machine |
| CN107703714A (en) * | 2017-09-26 | 2018-02-16 | 武汉华星光电技术有限公司 | A kind of manufacture method and light shield of the substrate of display |
| CN110109325A (en) * | 2018-02-01 | 2019-08-09 | 李冰 | A kind of splicing optical waveguide structure and preparation method thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105929639A (en) * | 2016-06-29 | 2016-09-07 | 武汉华星光电技术有限公司 | Method for improving lens mura of exposure machine |
| CN107703714A (en) * | 2017-09-26 | 2018-02-16 | 武汉华星光电技术有限公司 | A kind of manufacture method and light shield of the substrate of display |
| CN110109325A (en) * | 2018-02-01 | 2019-08-09 | 李冰 | A kind of splicing optical waveguide structure and preparation method thereof |
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