CN111424315B - 一种单晶炉热场加热器组件及单晶炉 - Google Patents
一种单晶炉热场加热器组件及单晶炉 Download PDFInfo
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- CN111424315B CN111424315B CN202010419341.8A CN202010419341A CN111424315B CN 111424315 B CN111424315 B CN 111424315B CN 202010419341 A CN202010419341 A CN 202010419341A CN 111424315 B CN111424315 B CN 111424315B
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- single crystal
- thermal field
- crystal furnace
- heater
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
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CN202010419341.8A CN111424315B (zh) | 2020-05-18 | 2020-05-18 | 一种单晶炉热场加热器组件及单晶炉 |
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CN202010419341.8A CN111424315B (zh) | 2020-05-18 | 2020-05-18 | 一种单晶炉热场加热器组件及单晶炉 |
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CN111424315A CN111424315A (zh) | 2020-07-17 |
CN111424315B true CN111424315B (zh) | 2021-11-23 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI812506B (zh) * | 2022-06-21 | 2023-08-11 | 大陸商西安奕斯偉材料科技股份有限公司 | 加熱器元件和單晶爐 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN114075692A (zh) * | 2020-08-19 | 2022-02-22 | 西安奕斯伟材料科技有限公司 | 单晶炉热场加热器及单晶炉 |
CN112144106A (zh) * | 2020-09-28 | 2020-12-29 | 上海新昇半导体科技有限公司 | 单晶生长设备及生长方法 |
CN112323140B (zh) * | 2020-10-15 | 2023-02-03 | 西安奕斯伟材料科技有限公司 | 一种单晶炉热场加热器组件及单晶炉 |
CN112779595A (zh) * | 2020-12-23 | 2021-05-11 | 西安奕斯伟硅片技术有限公司 | 单晶炉热场加热器及单晶炉 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3719336B2 (ja) * | 1998-08-31 | 2005-11-24 | 株式会社Sumco | シリコン単結晶の引上げ装置及びその引上げ方法 |
KR20100052142A (ko) * | 2008-11-10 | 2010-05-19 | 주식회사 실트론 | 히터 및 이를 포함하는 실리콘 단결정 제조 장치 |
CN101532172A (zh) * | 2009-04-17 | 2009-09-16 | 江苏华盛天龙机械股份有限公司 | 一种生长硅单晶的热装置 |
CN204570081U (zh) * | 2015-05-05 | 2015-08-19 | 山东天岳先进材料科技有限公司 | 一种用于生长大尺寸高纯碳化硅单晶的装置 |
CN105239154A (zh) * | 2015-09-10 | 2016-01-13 | 上海超硅半导体有限公司 | 提拉法单晶硅生长流场控制技术 |
CN107400925B (zh) * | 2017-08-02 | 2019-07-12 | 上海汉虹精密机械有限公司 | 一种单晶硅生长炉电极升降机构 |
CN207512312U (zh) * | 2018-02-08 | 2018-06-19 | 杞县东磁新能源有限公司 | 一种单晶硅生长炉电极升降机构 |
CN110735180A (zh) * | 2018-07-20 | 2020-01-31 | 上海新昇半导体科技有限公司 | 一种拉晶炉 |
CN209873178U (zh) * | 2019-02-27 | 2019-12-31 | 刘冬雯 | 一种降低晶体缺陷的单晶炉 |
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2020
- 2020-05-18 CN CN202010419341.8A patent/CN111424315B/zh active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI812506B (zh) * | 2022-06-21 | 2023-08-11 | 大陸商西安奕斯偉材料科技股份有限公司 | 加熱器元件和單晶爐 |
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Effective date of registration: 20211027 Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant after: Xi'an yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: Room 1323, block a, city gate, No.1 Jinye Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |
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Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Patentee after: Xi'an Yisiwei Material Technology Co.,Ltd. Patentee after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Patentee before: Xi'an yisiwei Material Technology Co.,Ltd. Patentee before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |
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