CN111421394A - Semiconductor chip production process - Google Patents
Semiconductor chip production process Download PDFInfo
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- CN111421394A CN111421394A CN202010268366.2A CN202010268366A CN111421394A CN 111421394 A CN111421394 A CN 111421394A CN 202010268366 A CN202010268366 A CN 202010268366A CN 111421394 A CN111421394 A CN 111421394A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B47/00—Drives or gearings; Equipment therefor
- B24B47/20—Drives or gearings; Equipment therefor relating to feed movement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention belongs to the technical field of semiconductor chip production, in particular to a semiconductor chip production process, wherein grinding equipment used in the production process comprises a bracket, a grinding head and a probe rod; the upper surface of the horizontal structure of the bracket is provided with an installation plate; the power box is arranged at the top of the support; the interior of the power box is fixedly connected with a motor; a grinding head and a probe rod are arranged below the motor; the invention effectively solves the problem of insufficient equipment investment of small-batch production enterprises, does not need manual regulation of the horizontal state of the chip surface, and solves the problems that part of enterprises use manual grinding in large quantity, the production efficiency is low, and the product quality is unstable.
Description
Technical Field
The invention belongs to the technical field of semiconductor chip production, and particularly relates to a semiconductor chip production process.
Background
Etching and wiring the semiconductor sheet to obtain a semiconductor device capable of realizing a certain function; not only silicon chips, but also gallium arsenide (which is toxic, so some inferior circuit boards do not decompose the gallium arsenide) germanium and other semiconductor materials, and semiconductors are in trend like automobiles; in the seventies of the twentieth century, the dynamic random access memory (D-RAM) market of the intel and other american enterprises became popular; however, in the eighties of the twentieth century, beginning with the name of Japanese corporation, high performance D-RAM was required due to the advent of large computers.
According to CN201810603894.1 a semiconductor chip production process, the grinding device in the prior art performs three-coordinate high-precision dotting to realize the automatic detection of the flatness and horizontal state of the wafer surface in the early stage, so that in the following grinding and polishing process, the automatic adjustment can be automatically performed according to the dotting detection result, but the automation and precision of the device are high, so the device cost is high, and the device is suitable for mass production.
In view of the above, in order to overcome the above technical problems, the present inventors have designed and developed a semiconductor chip manufacturing process, which uses a special grinding apparatus to solve the above technical problems.
Disclosure of Invention
The invention provides a semiconductor chip production process, which aims to make up for the defects of the prior art and solve the problems that in the prior art, the grinding equipment can automatically detect the flatness and the horizontal state of the surface of a wafer in a previous period by three-coordinate high-precision dotting, so that automatic adjustment can be automatically carried out according to the dotting detection result in the subsequent grinding and polishing process, but the equipment has higher automation and precision, so that the equipment cost is higher, the equipment is suitable for mass production, for small-batch production enterprises, the equipment is simply adjusted manually and is ground, so that the adjustment precision is lower, the surface quality of a ground finished product is lower, even part of enterprises can grind manually, so that the quality of the product is difficult to guarantee, and the like.
The technical scheme adopted by the invention for solving the technical problems is as follows: the invention relates to a semiconductor chip production process, which comprises the following steps:
s1: firstly, placing blocky polycrystalline silicon in a quartz crucible, and heating at high temperature to completely melt the blocky polycrystalline silicon into silicon melt; the polycrystalline silicon is heated at high temperature through the quartz crucible, so that the polycrystalline silicon can be rapidly and completely melted into silicon molten slurry, and the heating is uniform.
S2: carrying out crystal growth on the molten silicon heated at high temperature in the step S1 to obtain a crystal bar, then putting the crystal bar into a slicing machine for slicing to obtain a wafer, and then putting the wafer on grinding equipment for grinding into a mirror surface; the wafer can be quickly ground by arranging the grinding equipment, so that the ground surface of the wafer is in a mirror surface shape, and the flatness is higher.
S3: putting the mirror surface wafer obtained in the step S2 into a high-temperature diffusion furnace for oxidation treatment, then coating photoresist on the surface of the wafer, putting the wafer into a photoetching machine for exposure and development, and finally sending the wafer into an etching machine for plasma etching; the surface of the wafer is subjected to plasma etching, so that photoetching exposure treatment on the photoresist is realized, and then corrosion treatment on the part to be removed is realized through other modes.
S4: electroplating the wafer after plasma etching to enable the surface of the wafer to be electroplated with a layer of copper sulfate and copper ions to be deposited on the transistor to form a copper layer, polishing redundant copper to obtain a polished wafer, and finally obtaining the required semiconductor chip through subsequent treatment; a thin copper layer can be formed on the surface of the wafer through electroplating treatment, and finally grinding treatment is carried out through grinding equipment, so that the redundant copper on the surface of the wafer is polished.
The grinding equipment comprises a support, a mounting plate and a grinding head, the cross section of the support is in a L-shaped structural design, four adjusting holes are formed in the upper surface of a horizontal structure, adjusting knobs are mounted inside the four adjusting holes, the four adjusting knobs are jointly connected with the same mounting plate, a fixed limiting plate is fixedly connected to the upper surface of the mounting plate, an adjusting groove is formed in the right side position of the fixed limiting plate in the upper surface of the mounting plate, an adjusting rod is rotatably connected to the inside of the adjusting groove, a movable limiting plate is fixedly connected to the left end face of the adjusting rod, the movable limiting plate is slidably connected to the inside of the adjusting groove, the same semiconductor chip is clamped between the fixed limiting plate and the movable limiting plate, a first slide block is slidably connected to the upper surface of the vertical structure of the support left and right, a first groove plate is fixedly connected to the right side face of the first groove plate, a second slide block is slidably connected to the right side face of the first groove, a second groove plate is fixedly connected to the right side face of the second groove, the second groove plate, the second groove is fixedly connected to the right side face of the second groove, a second groove is slidably connected to a third slide block, a lower groove is fixedly connected to the right side face of a grinding screw rod, the second groove, the lower grinding head of a grinding rod, the grinding rod is fixedly connected to the grinding rod, the grinding head of the grinding rod, the grinding head of the grinding rod, the grinding rod is not only when the grinding rod, the grinding head of the grinding head is not only when the grinding head of the grinding rod, the grinding head is not the grinding rod, the grinding head, the grinding rod, the grinding head, the grinding rod, the grinding head, the grinding rod, the grinding head, the grinding rod, the grinding head, the grinding rod, the.
Preferably, the lower surface of the probe rod is provided with a ball groove; the ball is connected with the inside of the ball groove in a rolling way; the during operation, because the probe rod needs and the surface of chip keeps the contact to the realization is to the automatically regulated of bistrique height, but the probe rod can rub with the surface of chip at the removal in-process of polishing, can influence the quality on chip surface on the one hand, on the other hand probe rod also can influence the feeding that equipment was polished with the great frictional force of chip, consequently, set up the ball through the lower surface at the probe rod, can be under the condition that does not influence the regulation, realize the roll connection on probe rod and chip surface, very big reduction the production of frictional force.
Preferably, the outer arc surface of the second telescopic rod is provided with a pressure relief hole, and the inside and the outside of the second telescopic rod are communicated through the pressure relief hole; a pressure relief valve is arranged in the pressure relief hole; the during operation, because there is more undulant problem in the local plane degree of chip, especially when there is the foreign matter phenomenon on the chip surface, can make the probe rod carry out automatically regulated, the bistrique also can be continuous adjusts this moment, consequently when the plane quality on chip surface is relatively poor, the surface quality after polishing also can be relatively poor, consequently, set up the relief valve through the surface at the second telescopic link, the pressure release effect through the relief valve, when meetting the quick undulant problem in plane, the change that can be quick in the second telescopic link, the second telescopic link can directly carry out quick pressure release through the relief valve this moment, guarantee the adjustment alone of second telescopic link, avoid the influence of quick fluctuation to first telescopic link and bistrique.
Preferably, the lower surface of the fixing ring is fixedly connected with a baffle ring; the outer arc surface of the baffle ring is provided with a row of holes close to the lower surface of the fixing ring; the interior of the row holes is fixedly connected with a suction pipe, and the other end of the suction pipe is connected with negative pressure; during operation, because the probe rod need and chip surface between the contact, consequently if a large amount of abrasive dusts that the bistrique polished out remain when the chip surface, the normal work of influence probe rod that can be serious, consequently keep off the ring through setting up, through offering the round on the surface that keeps off the ring, through the negative pressure straw in the round surface, can be timely with the abrasive dusts suction, and keep off the ring and can avoid the abrasive dusts to throw away the problem, reduce the abrasive dusts and remain the problem on the chip surface.
Preferably, a rotating groove is formed in the position, close to the lower surface of the baffle ring, of the outer arc surface of the baffle ring; a rotating ring is rotatably connected inside the rotating groove; the outer arc surface of the rotating ring is provided with a connecting block; during operation, because the probe rod needs to carry out automatically regulated, and the distance between probe rod and the bistrique is nearer, consequently in order to avoid the probe rod and the chip surface after polishing between the contact, consequently through setting up the swivel, through the swivel at the rotation inslot rotation on baffle surface, can drive the position control of probe rod at the bistrique border to adapt to the position requirement of polishing of difference.
Preferably, a third telescopic rod is fixedly connected between the outer arc surface of the swivel and the connecting block, and the third telescopic rod is communicated with the second telescopic rod; the during operation, when great barrier appears on the chip surface, can directly block the feed motion of probe rod, because the diameter of probe rod is less, therefore intensity is lower, great resistance leads to probe rod fracture problem easily, consequently through setting up the third telescopic link, when the probe rod receives great movement resistance, can compress the third telescopic link, the inside gas of third telescopic link can directly enter into in the second telescopic link, realize that the second telescopic link shifts up automatically, the damage of probe rod or even fracture problem has been avoided.
The invention has the following beneficial effects:
1. according to the semiconductor chip production process, the grinding equipment used in the production process is provided with the mounting plate, the grinding head and the probe rod; the surface through probe rod and chip keeps the contact, and through the synchronous flexible of first telescopic link and second telescopic link, consequently can realize the high automatically regulated of bistrique, through a semiconductor chip production technology, through the grinding device who uses in this production technology, the effectual problem of having solved small batch production enterprise's equipment investment fund not enough, and need not the manual work and carry out the regulation of chip surface horizontal state, it uses the manual work to grind to have solved some enterprises a large amount, production efficiency is lower, and the unstable condition of product quality.
2. According to the semiconductor chip production process, the grinding equipment used in the production process is provided with the baffle ring, the suction pipe and the rotating ring; by arranging the baffle ring, the surface of the baffle ring is provided with the discharge holes, and the abrasive dust can be sucked out in time through the negative pressure suction pipe in the surface of the discharge holes, so that the problem that the abrasive dust is thrown out can be avoided, and the problem that the abrasive dust remains on the surface of the chip is reduced; the rotary ring is arranged, and the position of the probe rod on the periphery of the grinding head can be adjusted by rotating the rotary ring in the rotary groove on the surface of the baffle plate, so that different grinding direction requirements can be met.
Drawings
The invention will be further explained with reference to the drawings.
FIG. 1 is a process flow diagram of the present invention
FIG. 2 is a perspective view of a grinding apparatus used in the present invention;
FIG. 3 is a front view of a grinding apparatus used in the present invention;
FIG. 4 is an enlarged view of a portion of FIG. 3 at A;
in the figure: the grinding head device comprises a support 1, a first sliding block 11, a second sliding block 12, a third sliding block 13, a power box 14, a motor 15, a mounting plate 2, a fixed limiting plate 21, a movable limiting plate 22, a grinding head 3, a first telescopic rod 31, a fixed ring 32, a second telescopic rod 33, a probe rod 34, a ball 35, a pressure release valve 36, a stop ring 37, a suction pipe 38, a rotating ring 39 and a third telescopic rod 310.
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the invention easy to understand, the invention is further described with the specific embodiments.
As shown in fig. 1 to 4, a semiconductor chip manufacturing process according to the present invention includes the following steps:
s1: firstly, placing blocky polycrystalline silicon in a quartz crucible, and heating at high temperature to completely melt the blocky polycrystalline silicon into silicon melt; the polycrystalline silicon is heated at high temperature through the quartz crucible, so that the polycrystalline silicon can be rapidly and completely melted into silicon molten slurry, and the heating is uniform.
S2: carrying out crystal growth on the molten silicon heated at high temperature in the step S1 to obtain a crystal bar, then putting the crystal bar into a slicing machine for slicing to obtain a wafer, and then putting the wafer on grinding equipment for grinding into a mirror surface; the wafer can be quickly ground by arranging the grinding equipment, so that the ground surface of the wafer is in a mirror surface shape, and the flatness is higher.
S3: putting the mirror surface wafer obtained in the step S2 into a high-temperature diffusion furnace for oxidation treatment, then coating photoresist on the surface of the wafer, putting the wafer into a photoetching machine for exposure and development, and finally sending the wafer into an etching machine for plasma etching; the surface of the wafer is subjected to plasma etching, so that photoetching exposure treatment on the photoresist is realized, and then corrosion treatment on the part to be removed is realized through other modes.
S4: electroplating the wafer after plasma etching to enable the surface of the wafer to be electroplated with a layer of copper sulfate and copper ions to be deposited on the transistor to form a copper layer, polishing redundant copper to obtain a polished wafer, and finally obtaining the required semiconductor chip through subsequent treatment; a thin copper layer can be formed on the surface of the wafer through electroplating treatment, and finally grinding treatment is carried out through grinding equipment, so that the redundant copper on the surface of the wafer is polished.
When the grinding equipment used in the S2 and S4 comprises a support 1, a mounting plate 2 and a grinding head 3, the section of the support 1 is designed to be in a L-shaped structure, four adjusting holes are formed in the upper surface of the horizontal structure, adjusting knobs are mounted inside the four adjusting holes, the four adjusting knobs are connected with the same mounting plate 2 together, a fixed limiting plate 21 is fixedly connected to the upper surface of the mounting plate 2, an adjusting groove is formed in the right side of the fixed limiting plate 21, an adjusting rod is rotatably connected inside the adjusting groove, the left end face of the adjusting rod is fixedly connected with a movable limiting plate 22, the movable limiting plate 22 is connected to the inside of the adjusting groove in a left-right sliding mode, the same semiconductor chip is clamped between the fixed limiting plate 21 and the movable limiting plate 22 together, a first slide block 11 is connected to the right side face of the first slide block 11, the right side face of the first slide block 11 is fixedly connected with a second slide block 12 in a front-back sliding mode, the right side face of the second slide block 12 is fixedly connected with a second slide block 12, the right side face of the second slide block 12, the second slide block 12 is fixedly connected with a slide block 12, the second slide block 12, the slide block 14 is fixedly connected with a lower slide block 14, the slide block 14 of the slide block 11, the slide block 14 of the slide block 11 is connected with the slide block 14, the slide block 14 of the slide block 14, the slide block of the slide block 14 of the slide block of the slide rod, the slide rod of the slide rod is connected with the slide rod of the slide rod, the slide rod.
As an embodiment of the present invention, a ball groove is formed on the lower surface of the probe rod 34; the ball 35 is connected to the inner part of the ball groove in a rolling way; in operation, because probe 34 need keep in contact with the surface of chip to the realization is to the automatically regulated of bistrique 3 height, but probe 34 can rub with the surface of chip at the removal in-process of polishing, can influence the quality on chip surface on the one hand, and on the other hand probe 34 also can influence the feeding that equipment was polished with the great frictional force of chip, consequently through set up ball 35 at probe 34's lower surface, can be under the condition that does not influence the regulation, realize probe 34 and the rolling connection on chip surface, very big reduction frictional force's production.
As an embodiment of the present invention, the outer arc surface of the second telescopic rod 33 is provided with a pressure relief hole, and the pressure relief hole communicates the inside and the outside of the second telescopic rod 33; a pressure release valve 36 is arranged in the pressure release hole; the during operation, because there is more undulant problem in the local plane degree of chip, especially when there is the foreign matter phenomenon on the chip surface, can make probe rod 34 carry out automatically regulated, bistrique 3 also can be continuous to be adjusted this moment, consequently when the plane quality on chip surface is relatively poor, the surface quality after polishing also can be relatively poor, consequently, set up relief valve 36 through the surface at second telescopic link 33, the pressure release effect through relief valve 36, when meetting the quick undulant problem in plane, the change that can be quick in the second telescopic link 33 interior pressure, second telescopic link 33 can directly carry out quick pressure release through relief valve 36 this moment, guarantee second telescopic link 33 and adjust alone, avoid the influence of quick fluctuation to first telescopic link 31 and bistrique 3.
In one embodiment of the present invention, a retaining ring 37 is fixed to the lower surface of the fixing ring 32; the outer arc surface of the baffle ring 37 is provided with a row of holes close to the lower surface of the fixing ring 32; the interior of the row holes is fixedly connected with a suction pipe 38, and the other end of the suction pipe 38 is connected with negative pressure; in operation, because probe rod 34 need and the chip surface between the contact, consequently if a large amount of abrasive dusts that bistrique 3 polished out remain when the chip surface, the normal work of influence probe rod 34 that can be serious, consequently through setting up fender ring 37, through offering the round on the surface of fender ring 37, through negative pressure straw 38 in the round surface, can be timely with the abrasive dusts suction, and keep off ring 37 and can avoid the abrasive dusts to throw away the problem, reduce the abrasive dusts and remain the problem on the chip surface.
As an embodiment of the present invention, a rotation groove is formed on the outer arc surface of the baffle ring 37 at a position close to the lower surface of the baffle ring 37; a rotating ring 39 is rotatably connected inside the rotating groove; the outer arc surface of the rotating ring 39 is provided with a connecting block; during operation, because the probe rod 34 needs to be automatically adjusted, and the distance between the probe rod 34 and the grinding head 3 is short, in order to avoid the contact between the probe rod 34 and the surface of a polished chip, the probe rod 34 can be driven to adjust the position of the periphery of the grinding head 3 by arranging the rotating ring 39 and rotating the rotating ring 39 in the rotating groove on the surface of the baffle plate, so as to adapt to different polishing orientation requirements.
As an embodiment of the present invention, a third telescopic rod 310 is fixedly connected between the outer arc surface of the swivel 39 and the connecting block, and the third telescopic rod 310 is communicated with the second telescopic rod 33; during operation, when great barrier appears on the chip surface, can directly block the feed motion of probe 34, because probe 34's diameter is less, therefore intensity is lower, great resistance leads to probe 34 fracture problem easily, consequently through setting up third telescopic link 310, when probe 34 receives great movement resistance, can compress third telescopic link 310, the inside gas of third telescopic link 310 can directly enter into in the second telescopic link 33, realize that second telescopic link 33 shifts up automatically, the damage of probe 34 or even fracture problem has been avoided.
The specific working process is as follows:
when the grinding machine works, when a wafer or a semiconductor chip needs to be ground, firstly, a worker places the chip on the upper surface of the mounting plate 2, the left side surface of the chip is tightly attached to the fixed limiting plate 21, then the adjusting rod is rotated to move to the left in the adjusting groove, the adjusting rod further drives the movable limiting plate 22 to move to the left, the movable limiting plate 22 further fixes the right side surface of the chip, the chip can be limited and fixed through the fixed limiting plate 21 and the movable limiting plate 22, then, the grinding head 3 is positioned right above the chip by adjusting the first slide block 11, the second slide block 12 and the third slide block 13, the height difference between the grinding head 3 and the probe 34 is adjusted, the lower surface of the probe 34 after adjustment is required to be just contacted with the upper surface of the chip, the motor 15 is started simultaneously, the grinding head 3 is rotated to the inside of the chip, and after the, the switch is started again, the motor 15 rotates, meanwhile, the first sliding block 11, the second sliding block 12 and the third sliding block 13 can automatically move according to a control program, the grinding of the material removing on the surface of the chip in a fixed track is realized, and finally, the surface of the chip is completely ground, by arranging the first telescopic rod 31 and the second telescopic rod 33, when the chip is in a non-complete horizontal state, the grinding head 3 can have inconsistent grinding depth, even part of the position is not ground, therefore, the probe 34 can be in contact with the surface of the chip through the second telescopic rod 33, when the probe 34 and the grinding head 3 are driven by the power box 14 to simultaneously move, the contact force between the probe 34 and the surface of the chip is increased or separated, at the moment, the second telescopic rod 33 can automatically stretch and adjust, and in the adjusting process, because the second telescopic rod 33 is communicated with the first telescopic rod 31, therefore, the synchronous extension and retraction of the first telescopic rod 31 can be realized, and the height of the grinding head 3 can be automatically adjusted by keeping the probe rod 34 at the front position of the grinding head 3 and keeping the distance between the probe rod 34 and the grinding head 3 relatively short; the ball 35 is arranged on the lower surface of the probe rod 34, so that the probe rod 34 can be in rolling connection with the surface of the chip under the condition that the adjustment is not influenced; through the pressure relief valve 36 arranged on the surface of the second telescopic rod 33, the internal pressure of the second telescopic rod 33 can be changed rapidly under the pressure relief effect of the pressure relief valve 36 when the problem of plane rapid fluctuation is encountered, and at the moment, the second telescopic rod 33 can directly and rapidly relieve the pressure through the pressure relief valve 36, so that the second telescopic rod 33 is ensured to be independently adjusted, and the influence of rapid fluctuation on the first telescopic rod 31 and the grinding head 3 is avoided; the surface of the baffle ring 37 is provided with the discharge holes, the abrasive dust can be sucked out in time through the negative pressure suction pipe 38 in the surface of the discharge holes, and the baffle ring 37 can avoid the problem of throwing the abrasive dust; through setting up third telescopic link 310, when probe 34 received great movement resistance, can compress third telescopic link 310, the inside gas of third telescopic link 310 can directly enter into second telescopic link 33, realizes that second telescopic link 33 shifts up automatically.
The foregoing illustrates and describes the principles, general features, and advantages of the present invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (6)
1. A semiconductor chip production process is characterized in that: the production process comprises the following steps:
s1: firstly, placing blocky polycrystalline silicon in a quartz crucible, and heating at high temperature to completely melt the blocky polycrystalline silicon into silicon melt;
s2: carrying out crystal growth on the molten silicon heated at high temperature in the step S1 to obtain a crystal bar, then putting the crystal bar into a slicing machine for slicing to obtain a wafer, and then putting the wafer on a grinding machine for grinding into a mirror surface;
s3: putting the mirror surface wafer obtained in the step S2 into a high-temperature diffusion furnace for oxidation treatment, then coating photoresist on the surface of the wafer, putting the wafer into a photoetching machine for exposure and development, and finally sending the wafer into an etching machine for plasma etching;
s4: electroplating the wafer after plasma etching to enable the surface of the wafer to be electroplated with a layer of copper sulfate and copper ions to be deposited on the transistor to form a copper layer, polishing redundant copper to obtain a polished wafer, and finally obtaining the required semiconductor chip through subsequent treatment;
the grinding equipment used in the S2 and S4 comprises a support (1), a mounting plate (2) and a grinding head (3), the cross section of the support (1) is designed to be a L-shaped structure, four adjusting holes are formed in the upper surface of a horizontal structure, adjusting knobs are mounted inside the four adjusting holes, the four adjusting knobs are connected with the same mounting plate (2) together, a fixing limiting plate (21) is fixedly connected to the upper surface of the mounting plate (2), an adjusting groove is formed in the right side position of the fixing limiting plate (21), an adjusting rod is rotatably connected inside the adjusting groove, a movable limiting plate (22) is fixedly connected to the left end face of the adjusting rod, the movable limiting plate (22) is connected inside the adjusting groove in a left-right sliding mode, a same semiconductor chip is clamped between the fixing limiting plate (21) and the movable limiting plate (22) together, a first sliding block (11) is connected to the upper surface of a vertical structure of the support (1) in a left-right sliding mode, a first sliding mode is connected to the right side face of the right sliding mode, a first sliding block (11) is fixedly connected to the right side face of a first sliding block (11), a second sliding block (14) is connected to a power box, a second sliding block (14), a power box is connected to a power box, a power box is connected to a power box, a power box power.
2. A semiconductor chip production process according to claim 1, characterized in that: the lower surface of the probe rod (34) is provided with a ball groove; the ball groove is internally connected with a ball (35) in a rolling way.
3. A semiconductor chip production process according to claim 2, characterized in that: the outer arc surface of the second telescopic rod (33) is provided with a pressure relief hole, and the inside and the outside of the second telescopic rod (33) are communicated through the pressure relief hole; and a pressure release valve (36) is arranged in the pressure release hole.
4. A semiconductor chip production process according to claim 3, wherein: the lower surface of the fixing ring (32) is fixedly connected with a baffle ring (37); the outer arc surface of the baffle ring (37) is provided with a row of holes close to the lower surface of the fixing ring (32); the interior of the row holes is fixedly connected with a suction pipe (38), and the other end of the suction pipe (38) is connected with negative pressure.
5. A semiconductor chip production process according to claim 1, characterized in that: a rotating groove is formed in the position, close to the lower surface of the baffle ring (37), of the outer arc surface of the baffle ring (37); a rotating ring (39) is rotatably connected inside the rotating groove; the outer arc surface of the rotating ring (39) is provided with a connecting block.
6. A semiconductor chip production process according to claim 5, wherein: and a third telescopic rod (310) is fixedly connected between the outer arc surface of the rotating ring (39) and the connecting block, and the third telescopic rod (310) is communicated with the second telescopic rod (33).
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010268366.2A CN111421394A (en) | 2020-04-08 | 2020-04-08 | Semiconductor chip production process |
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| CN202010268366.2A CN111421394A (en) | 2020-04-08 | 2020-04-08 | Semiconductor chip production process |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111897049A (en) * | 2020-08-27 | 2020-11-06 | 四川天邑康和通信股份有限公司 | Automatic chip mounting production process for optical splitter chip |
| CN112091780A (en) * | 2020-09-21 | 2020-12-18 | 安徽中恒威设计有限公司 | Device is moulded in repair of industrial design product appearance |
| CN116890266A (en) * | 2023-06-14 | 2023-10-17 | 广州统力新能源有限公司 | Production process of BIPV assembly |
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