CN111416605A - Semi-controlled device driving device - Google Patents
Semi-controlled device driving device Download PDFInfo
- Publication number
- CN111416605A CN111416605A CN201911419586.4A CN201911419586A CN111416605A CN 111416605 A CN111416605 A CN 111416605A CN 201911419586 A CN201911419586 A CN 201911419586A CN 111416605 A CN111416605 A CN 111416605A
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- semi
- controlled device
- pulse signal
- voltage detection
- detection switch
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- 238000001514 detection method Methods 0.000 claims abstract description 66
- 239000003990 capacitor Substances 0.000 claims description 4
- 101100365087 Arabidopsis thaliana SCRA gene Proteins 0.000 description 24
- 101150105073 SCR1 gene Proteins 0.000 description 24
- 101100134054 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) NTG1 gene Proteins 0.000 description 24
- 101000668165 Homo sapiens RNA-binding motif, single-stranded-interacting protein 1 Proteins 0.000 description 6
- 102100039692 RNA-binding motif, single-stranded-interacting protein 1 Human genes 0.000 description 6
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/30—Modifications for providing a predetermined threshold before switching
- H03K17/305—Modifications for providing a predetermined threshold before switching in thyristor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0027—Measuring means of, e.g. currents through or voltages across the switch
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- Electronic Switches (AREA)
- Power Conversion In General (AREA)
Abstract
The invention relates to a semi-controlled device driving device capable of throttling-driving a semi-controlled device, which comprises a voltage detection switch, wherein the voltage detection switch is connected with a trigger electrode of the semi-controlled device to be driven in series, and the voltage detection switch is used for detecting the potential difference between the trigger electrode of the semi-controlled device and a cathode of the semi-controlled device.
Description
Technical Field
The invention relates to a semi-controlled device driving device, in particular to a semi-controlled device driving device capable of throttling and driving semi-controlled devices.
Background
Because the thyristor (semi-controlled device) is driven to be conducted by adopting the pulse signal at present, the driving current of the thyristor is still continuously improved after the thyristor is conducted, and the defect of high driving energy consumption exists.
Disclosure of Invention
The invention aims to overcome the defects of pulse driving of the existing semi-controlled device and provides a semi-controlled device driving device which can close the driving current of the semi-controlled device after the semi-controlled device is switched on.
The purpose of the invention is achieved by the following technical scheme:
A semi-controlled device driving device comprises a voltage detection switch, wherein the voltage detection switch is connected with a trigger electrode of a semi-controlled device to be driven in series, and the voltage detection switch is used for detecting potential difference between the trigger electrode of the semi-controlled device and a cathode of the semi-controlled device.
A semi-controlled device driving device, voltage detection switch connecting pulse signal
A voltage detection switch is used for detecting the voltage of a pulse signal.
A semi-controlled device drive device, when the trigger pole of the semi-controlled device, the negative pole of the semi-controlled device is the low level, input the high level pulse signal, the voltage detection switch is turned on; when the trigger electrode of the semi-controlled device and the cathode of the semi-controlled device are at high level, a high-level pulse signal is input, and the voltage detection switch is in an off state.
A semi-controlled device driving apparatus, the working energy of a voltage detection switch is provided by a pulse signal.
A voltage detection switch is composed of a triode and a resistor or a triode, a resistor and a capacitor.
A semi-controlled device driving device is provided, wherein the semi-controlled device is a thyristor.
A semi-controlled device driving device, the voltage detection switch includes the first voltage detection switch, the second voltage detection switch, the semi-controlled device includes the first semi-controlled device, the second semi-controlled device, the first semi-controlled device, the second semi-controlled device reverse parallel, also includes a control unit, the first photoelectric coupler, the second photoelectric coupler, the pulse signal includes the first pulse signal, the second pulse signal, the first voltage detection switch connects with the first semi-controlled device, the second voltage detection switch connects with the second semi-controlled device, the first photoelectric coupler connects with the first voltage detection switch, the second photoelectric coupler connects with the second voltage detection switch, the output signal of the first photoelectric coupler, the output signal of the second photoelectric coupler transmit to the control unit, the control unit provides the first pulse signal to the first voltage detection switch, the control unit provides a second pulse signal to the second voltage detection switch.
A control unit provides a first pulse signal and stops providing a second pulse signal when a first half-control type device is in a conducting state; the control unit provides the second pulse signal and stops providing the first pulse signal when the second semi-control device is in the conducting state.
A control unit provides a first pulse signal and stops providing a second pulse signal when a first half-control type device is in a conducting state; the control unit provides a second pulse signal when the first half-control type device is turned on and turned off, and stops providing the first pulse signal; the control unit provides a second pulse signal and stops providing the first pulse signal when the second semi-control type device is in a conducting state; the control unit provides the first pulse signal and stops providing the second pulse signal when the second semi-control device is turned on and turned off.
A semi-controlled device driving apparatus, the working energy of the first photoelectric coupler is provided by the first pulse signal; the working energy of the second photoelectric coupler is provided by the second pulse signal.
The invention has reasonable design and has the advantages of switching off the trigger current of the semi-controlled device after the semi-controlled device is switched on and good energy-saving effect.
Drawings
Fig. 1 is a schematic circuit diagram of a driving apparatus of a semi-controlled device according to an embodiment of the present invention.
FIG. 2 is a schematic circuit diagram of a second embodiment of a driving apparatus for a half-controlled device according to the present invention.
Detailed Description
Fig. 1 shows a first embodiment of a driving apparatus for a semi-controlled device according to the present invention:
A semi-controlled device driving device comprises a voltage detection switch A, wherein the voltage detection switch A is connected with a trigger electrode of a semi-controlled device SCR1 (a thyristor and a unidirectional thyristor) to be driven in series, the voltage detection switch A is used for detecting the potential difference between the trigger electrode of the semi-controlled device SCR1 and a cathode of the semi-controlled device SCR1, and the voltage detection switch A is connected with a pulse signal (without limitation).
Voltage detection switch a: the working energy is provided by a pulse signal; the voltage detection switch A is also used for detecting the voltage of the pulse signal (selected according to the requirement); it is composed of triode, resistor and capacitor (can be omitted).
The working principle is as follows: when the semi-controlled device SCR1 is in an off state, a low level (zero voltage) appears between the trigger electrode of the semi-controlled device SCR1 and the cathode of the semi-controlled device SCR1, and when a high level pulse signal is input to the voltage detection switch a, the voltage detection switch a is turned on; when the voltage between the anode and the cathode of the semi-controlled device SCR1 meets the turn-on condition of the semi-controlled device SCR1, the semi-controlled device SCR1 is turned on, when the pulse signal is at a low level, the trigger electrode of the semi-controlled device SCR1 and the cathode of the semi-controlled device SCR1 are at a high level (about 1 volt), and when the high-level pulse signal is input, the voltage detection switch A is in a cut-off state, so that the purpose of closing the trigger electrode current of the semi-controlled device SCR1 is achieved.
The second embodiment of the driving apparatus of the semi-controlled device of the present invention is shown in fig. 2:
A semi-controlled device driving device comprises voltage detection switches (a first voltage detection switch A1 and a second voltage detection switch A2), wherein the voltage detection switches are connected with semi-controlled devices (a first semi-controlled device SCR1 and a second semi-controlled device SCR2 which are required to be driven and trigger electrodes of the first semi-controlled device SCR1 and the second semi-controlled device SCR2 which are connected in parallel in an opposite mode) (are thyristors) in series, the voltage detection switches (A1 and A2) are used for detecting potential differences between the trigger electrodes of the semi-controlled devices (SCR 1 and SCR 2) and cathodes of the semi-controlled devices (SCR 1 and SCR 2), and the voltage detection switches (A1 and A2) are connected with pulse signals.
Voltage detection switches (a 1, a 2): the working energy is provided by a pulse signal; the voltage detection switches (A1 and A2) are also used for detecting the voltage of the pulse signal (selected according to the requirement); it is composed of triode, resistor and capacitor (can be omitted).
The control device further comprises a control unit B, a first photoelectric coupler OPT1 and a second photoelectric coupler OPT2, wherein the pulse signals comprise a first pulse signal (driving SCR 1) and a second pulse signal (driving SCR 2), a first voltage detection switch A1 is connected with the first half-control device SCR1, a second voltage detection switch A2 is connected with the second half-control device SCR2, the first photoelectric coupler OPT1 is connected with a first voltage detection switch A1, the second photoelectric coupler OPT2 is connected with a second voltage detection switch A2, the output signals of the first photoelectric coupler OPT1 and the second photoelectric coupler OPT2 are transmitted to the control unit B, the control unit B provides the first pulse signal to the first voltage detection switch A1, and the control unit B provides the second pulse signal to the second voltage detection switch A1.
The working principle is as follows: when the semi-controlled device is in an off state, a low level (zero voltage) is presented between a trigger electrode of the semi-controlled device and a cathode of the semi-controlled device, and when a high-level pulse signal is input into the voltage detection switch A, the voltage detection switch A is switched on; when the voltage between the anode and the cathode of the semi-controlled device SCR1 meets the turn-on condition of the semi-controlled device SCR1, the semi-controlled device SCR1 is turned on, when the pulse signal is at a low level, the trigger electrode of the semi-controlled device SCR1 and the cathode of the semi-controlled device SCR1 are at a high level (about 1 volt), and when the high-level pulse signal is input, the voltage detection switch A is in a cut-off state, so that the purpose of closing the trigger electrode current of the semi-controlled device SCR1 is achieved.
The control unit B provides a first pulse signal and stops providing a second pulse signal when the first half-control type device SCR1 is in a conducting state; the control unit B supplies the second pulse signal and stops supplying the first pulse signal when the second half-control device SCR2 is in the on state.
The control unit B provides a first pulse signal and stops providing a second pulse signal when the first half-control type device SCR1 is in a conducting state; the control unit B provides a second pulse signal when the first half-control type device SCR1 is turned on and off, and stops providing the first pulse signal; the control unit B provides the second pulse signal and stops providing the first pulse signal when the second half-control device SCR2 is in the on state; the control unit B provides the first pulse signal and stops providing the second pulse signal when the second half-control device SCR2 is turned on and off. The working energy of the first photocoupler OPT1 is provided by a first pulse signal; the operating energy of the second photo-coupler OPT2 is provided by the second pulse signal.
In the embodiment, when the other half-control type device which is reversely connected in parallel with one half-control type device is conducted, no pulse signal is provided, and the driving energy consumption is reduced.
In conclusion, the invention has the advantages of good energy-saving effect and no need of adopting a high-voltage current-limiting element.
Claims (11)
1. A semi-controlled device driving device comprises a voltage detection switch, wherein the voltage detection switch is connected with a trigger electrode of a semi-controlled device to be driven in series, and the semi-controlled device driving device is characterized in that: the voltage detection switch is used for detecting the potential difference between the trigger electrode of the semi-controlled device and the cathode of the semi-controlled device.
2. The semi-controlled device driving apparatus according to claim 1, wherein: the voltage detection switch is connected with a pulse signal.
3. The semi-controlled device driving apparatus according to claim 2, wherein: the voltage detection switch is used for detecting the voltage of the pulse signal.
4. The semi-controlled device driving apparatus according to claim 3, wherein:
When the trigger electrode of the semi-controlled device and the cathode of the semi-controlled device are at low level, the high-level pulse signal is input, and the voltage detection switch is switched on;
When the trigger electrode of the semi-controlled device and the cathode of the semi-controlled device are at high level, the pulse signal at high level is input, and the voltage detection switch is in a cut-off state.
5. The semi-controlled device driving apparatus according to claim 2, wherein: the working energy of the voltage detection switch is provided by the pulse signal.
6. The semi-controlled device driving apparatus according to claim 1, wherein: the voltage detection switch is composed of a triode and a resistor or composed of a triode, a resistor and a capacitor.
7. The semi-controlled device driving apparatus according to claim 1, wherein: the semi-controlled device is a thyristor.
8. The device driving apparatus of one of claims 1 to 7, further comprising: the voltage detection switch comprises a first voltage detection switch and a second voltage detection switch, the semi-controlled device comprises a first semi-controlled device and a second semi-controlled device which are reversely connected in parallel, the voltage detection switch further comprises a control unit, a first photoelectric coupler and a second photoelectric coupler, the pulse signals comprise a first pulse signal and a second pulse signal, the first voltage detection switch is connected with the first semi-controlled device, the second voltage detection switch is connected with the second semi-controlled device, the first photoelectric coupler is connected with the first voltage detection switch, the second photoelectric coupler is connected with the second voltage detection switch, the output signal of the first photoelectric coupler and the output signal of the second photoelectric coupler are transmitted to the control unit, and the control unit provides the first pulse signal to the first voltage detection switch, the control unit provides the second pulse signal to the second voltage detection switch.
9. The semi-controlled device driving apparatus according to claim 8, wherein:
The control unit provides the first pulse signal and stops providing the second pulse signal when the first half-control type device is in a conducting state;
The control unit provides the second pulse signal and stops providing the first pulse signal when the second semi-control type device is in the conducting state.
10. The semi-controlled device driving apparatus according to claim 8, wherein:
The control unit provides the first pulse signal and stops providing the second pulse signal when the first half-control type device is in a conducting state;
The control unit provides the second pulse signal when the first half-control type device is turned on and turned off, and stops providing the first pulse signal;
The control unit provides the second pulse signal and stops providing the first pulse signal when the second semi-control type device is in a conducting state;
The control unit provides the first pulse signal and stops providing the second pulse signal when the second semi-control device is turned on and off.
11. The semi-controlled device driving apparatus according to claim 8, wherein: the working energy of the first photoelectric coupler is provided by the first pulse signal; the working energy of the second photoelectric coupler is provided by the second pulse signal.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910009988 | 2019-01-06 | ||
| CN2019100099880 | 2019-01-06 |
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| Publication Number | Publication Date |
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| CN111416605A true CN111416605A (en) | 2020-07-14 |
| CN111416605B CN111416605B (en) | 2024-04-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201911419586.4A Active CN111416605B (en) | 2019-01-06 | 2019-12-31 | Semi-controlled device driving device |
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| CN (1) | CN111416605B (en) |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05184134A (en) * | 1991-12-26 | 1993-07-23 | Toyo Electric Mfg Co Ltd | Gate circuit for gto |
| CN102244510A (en) * | 2011-05-18 | 2011-11-16 | 广州市金矢电子有限公司 | Trigger energy saving apparatus and thyristor switch |
| CN202435365U (en) * | 2011-05-18 | 2012-09-12 | 广州市金矢电子有限公司 | Energy saving triggering device and thyristor switch |
| WO2014034063A1 (en) * | 2012-08-30 | 2014-03-06 | 株式会社デンソー | Semiconductor apparatus |
| CN204242871U (en) * | 2014-03-07 | 2015-04-01 | 广州市金矢电子有限公司 | Capacitance coupling type arc-suppression circuit and device |
| CN105449632A (en) * | 2014-08-15 | 2016-03-30 | 施耐德电器工业公司 | Equipment and method used for protecting low-voltage circuit |
| CN106712756A (en) * | 2016-01-24 | 2017-05-24 | 广州市金矢电子有限公司 | Hybrid switch |
| CN106788365A (en) * | 2016-01-24 | 2017-05-31 | 广州市金矢电子有限公司 | Half control type device driving method and device, hybrid devices |
| CN107733411A (en) * | 2016-08-10 | 2018-02-23 | 广州市金矢电子有限公司 | Half control type device drive throttling arrangement |
| CN108667442A (en) * | 2017-06-05 | 2018-10-16 | 广州市金矢电子有限公司 | Operating passing zero switching protective device |
| CN108718193A (en) * | 2018-07-25 | 2018-10-30 | 清华大学 | A kind of Drive Protecting Circuit and its control method of power semiconductor |
-
2019
- 2019-12-31 CN CN201911419586.4A patent/CN111416605B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05184134A (en) * | 1991-12-26 | 1993-07-23 | Toyo Electric Mfg Co Ltd | Gate circuit for gto |
| CN102244510A (en) * | 2011-05-18 | 2011-11-16 | 广州市金矢电子有限公司 | Trigger energy saving apparatus and thyristor switch |
| CN202435365U (en) * | 2011-05-18 | 2012-09-12 | 广州市金矢电子有限公司 | Energy saving triggering device and thyristor switch |
| WO2014034063A1 (en) * | 2012-08-30 | 2014-03-06 | 株式会社デンソー | Semiconductor apparatus |
| CN204242871U (en) * | 2014-03-07 | 2015-04-01 | 广州市金矢电子有限公司 | Capacitance coupling type arc-suppression circuit and device |
| CN105449632A (en) * | 2014-08-15 | 2016-03-30 | 施耐德电器工业公司 | Equipment and method used for protecting low-voltage circuit |
| CN106712756A (en) * | 2016-01-24 | 2017-05-24 | 广州市金矢电子有限公司 | Hybrid switch |
| CN106788365A (en) * | 2016-01-24 | 2017-05-31 | 广州市金矢电子有限公司 | Half control type device driving method and device, hybrid devices |
| CN107733411A (en) * | 2016-08-10 | 2018-02-23 | 广州市金矢电子有限公司 | Half control type device drive throttling arrangement |
| CN108667442A (en) * | 2017-06-05 | 2018-10-16 | 广州市金矢电子有限公司 | Operating passing zero switching protective device |
| CN108718193A (en) * | 2018-07-25 | 2018-10-30 | 清华大学 | A kind of Drive Protecting Circuit and its control method of power semiconductor |
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| Publication number | Publication date |
|---|---|
| CN111416605B (en) | 2024-04-12 |
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