CN105656469A - Combined switch thyristor circuit - Google Patents

Combined switch thyristor circuit Download PDF

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Publication number
CN105656469A
CN105656469A CN201610117832.0A CN201610117832A CN105656469A CN 105656469 A CN105656469 A CN 105656469A CN 201610117832 A CN201610117832 A CN 201610117832A CN 105656469 A CN105656469 A CN 105656469A
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CN
China
Prior art keywords
electric capacity
thyristor
resistance
series
voltage
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CN201610117832.0A
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Chinese (zh)
Inventor
郭桥石
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GUANGZHOU JINSHI ELECTRONICS CO Ltd
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GUANGZHOU JINSHI ELECTRONICS CO Ltd
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Publication of CN105656469A publication Critical patent/CN105656469A/en
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/08108Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in thyristor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/08116Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in composite switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled

Abstract

The invention belongs to the field of electrics, and relates to a combined switch thyristor circuit suitable for being applied to a combined switch. The combined switch thyristor circuit comprises a thyristor connected with a mechanical switch in parallel, a first resistor, a one-way conduction device, a first capacitor, a first semiconductor switch and a first voltage stabilizer; the first resistor, the one-way conduction device and the first capacitor are connected in series to form a first series circuit, one end of the first series circuit is connected with a first end of the thyristor, the other end of the first series circuit is connected with a third end of the thyristor, a discharging loop is formed by the first capacitor through the first semiconductor switch and a second end and the first end of the thyristor, and the series circuit formed by connecting the first capacitor with the first voltage stabilizer in parallel or connecting the first capacitor with the one-way conduction device in series is connected with the first voltage stabilizer. The combined switch thyristor circuit has the advantages of being high in cost performance, small in switch-on inrush current and high in reliability.

Description

Combination switch thyristor circuit
Technical field
Combination switch thyristor circuit of the present invention belongs to electricity field, particularly a kind of combination switch thyristor circuit being suitable in combination switch application.
Background technology
At present in power system, use the occasion that electric capacitor is carried out switching by combination switch replacement traditional capacitance catalyst to get more and more, following two thyristor circuit can be divided into according to the triggering work principle that no-flashy-flow is connected:
1. the thyristor circuit that transformator triggers: it includes IGCT, pulse signal generation circuit, transformer drive circuit, transformator, rectification circuit, the pulse signal that pulse signal generation circuit produces, it is supplied to transformer drive circuit driving transformer, exported rectification circuit by transformator again, after rectification, be supplied to IGBT group signal. There is the shortcoming that shove relatively greatly in zero cross fired blind area big, that high frequency pollutes, pulse duty factor causes, cost performance is low that takes up room in it.
2. the thyristor circuit of high-pressure electronic switch triggering: it includes IGCT, high-pressure electronic switchs, resistance, IGCT is in parallel with mechanical switch, turn on thyristors triggers signal and is passed through resistance by the major loop of IGCT, high-pressure electronic switchs (press polish electric coupler as contour in MOC3083) trigger electrode to IGCT, high-pressure electronic switch bears high voltage, and major part operating mode needs multiple series connection to use, there is poor reliability, the shortcoming that cost performance is low, simultaneously because the voltage drop of high-pressure electronic switching circuitry is big, zero cross fired blind area is big, the general IGCT higher ability of major loop both end voltage difference reliably triggers, exist and connect bigger shortcoming of shoving.
Summary of the invention
Present invention aims to the weak point of existing combination switch thyristor circuit and provide a kind of without transformator, switch without high-pressure electronic, cost performance is high, connect shove little, reliability is high and the convenient thyristor circuit used in combination switch.
Realize it is an object of the invention to reach by the following technical programs:
A kind of combination switch thyristor circuit, it includes an IGCT in parallel with mechanical switch, first resistance, one one way conducting device, first electric capacity, first semiconductor switch, first voltage-stabilizing device, described first resistance, described one way conducting device, described first capacitances in series forms the first series circuit, one end of described first series circuit is connected with the first end of described IGCT, the other end of described first series circuit and the three-terminal link of described IGCT, described first electric capacity passes through described first semiconductor switch, second end of described IGCT, described first end forms discharge loop, described first electric capacity is in parallel with described first voltage-stabilizing device with the series circuit that described one way conducting device is in series with described first voltage-stabilizing device the first electric capacity in parallel or described.
A kind of combination switch thyristor circuit, described first electric capacity is in parallel by described first semiconductor switch and described second end, described first end.
A kind of combination switch thyristor circuit, by the electric current of described first resistance less than the minimum trigger current triggered needed for described turn on thyristors.
A kind of combination switch thyristor circuit, described first voltage-stabilizing device is a Zener diode, and described one way conducting device is a diode.
A kind of combination switch thyristor circuit, described first semiconductor switch is that an audion, a photoelectrical coupler or a photoelectrical coupler drive transistor circuit.
A kind of combination switch thyristor circuit, also includes the second resistance, and described second resistant series is in described discharge loop.
A kind of combination switch thyristor circuit, described IGCT is bidirectional thyristor, and described first end is the first anode of described bidirectional thyristor, and described second end is the trigger electrode of described bidirectional thyristor, and described 3rd end is the second plate of described bidirectional thyristor.
A kind of combination switch thyristor circuit, described first resistance is connected with described one way conducting device, the power supply of described second plate is negatively charged to described first electric capacity by described first resistance, described one way conducting device, the negatively charged end of described first electric capacity is connected with described trigger electrode by described first semiconductor switch, and the other end of described first electric capacity is connected with the described first anode.
A kind of combination switch thyristor circuit, the negatively charged end of described first electric capacity is connected with the anode of described one way conducting device, the other end of described first electric capacity is connected with described second plate by described first resistance, the negative electrode of described one way conducting device is connected with the first anode of described bidirectional thyristor, the negatively charged end of described first electric capacity is connected with described trigger electrode, and described first electric capacity is in parallel with described first semiconductor switch with the series circuit that described one way conducting device is in series.
A kind of combination switch thyristor circuit, described IGCT is unidirectional thyristor, and described first end is the negative electrode of described unidirectional thyristor, and described second end is the trigger electrode of described unidirectional thyristor, and described 3rd end is the anode of described unidirectional thyristor.
A kind of combination switch thyristor circuit, the power supply of the anode of described unidirectional thyristor by described first resistance, described one way conducting device to described first electric capacity positive charge, the positive charge end of described first electric capacity is connected with described trigger electrode by described first semiconductor switch, and the other end of described first electric capacity is connected with the negative electrode of described unidirectional thyristor.
A kind of combination switch thyristor circuit, the positive charge end of described first electric capacity is connected with the negative electrode of described one way conducting device, the other end of described first electric capacity is connected with one end of described first resistance, the other end of described first resistance is connected with the anode of described unidirectional thyristor, the anode of described one way conducting device is connected with the negative electrode of described unidirectional thyristor, the positive charge end of described first electric capacity is connected with described trigger electrode, and described first electric capacity is in parallel with described first semiconductor switch with the series circuit that described one way conducting device is in series.
A kind of combination switch thyristor circuit, also include the 3rd resistance, second electric capacity, second voltage-stabilizing device, described 3rd resistance, described second electric capacity, described second voltage-stabilizing device is in series the second series circuit, the two ends of described second series circuit respectively with described first end, described three-terminal link, described second electric capacity, described 3rd resistance, described second end, described first end and at least one semiconductor switch are in series a series circuit, described first end is connected with one end of described second voltage-stabilizing device, described second electric capacity, the common end that the series circuit of described 3rd resistant series is connected with described semiconductor switch is connected with the described second voltage-stabilizing device other end.
A kind of combination switch thyristor circuit, described semiconductor switch pressure voltage is less than the rated operational voltage of described IGCT major loop.
A kind of combination switch thyristor circuit, described semiconductor switch is an audion, a photoelectrical coupler or photoelectrical coupler driving transistor circuit or is described first semiconductor switch.
The present invention is reasonable in design, under mechanical switch disjunction state, the voltage utilizing the major loop two ends of IGCT passes through resistance, electric capacity is charged by one way conducting device, then when needs mechanical switch is connected, the discharge charge of electric capacity triggers turn on thyristors by the first semiconductor switch, reach the purpose that load capacitance no-flashy-flow is connected, owing to the time difference of turn on thyristors with combination switch mechanical switch Guan Bi is typically in a few tens of milliseconds, the capacity of required electric capacity can be only small, have and trigger without transformator, switch without high-pressure electronic, cost performance is high, connection is shoved little, the advantage that reliability is high.
Accompanying drawing explanation
Fig. 1 is embodiment one circuit theory diagrams of combination switch thyristor circuit of the present invention.
Fig. 2 is embodiment two circuit theory diagrams of combination switch thyristor circuit of the present invention.
Fig. 3 is the embodiment three-circuit schematic diagram of combination switch thyristor circuit of the present invention.
Fig. 4 is embodiment four circuit theory diagrams of combination switch thyristor circuit of the present invention.
Fig. 5 is that a photoelectrical coupler drives transistorized circuitry.
Detailed description of the invention
The embodiment one of combination switch thyristor circuit of the present invention, as shown in Figure 1:
A kind of combination switch thyristor circuit, it includes the bidirectional thyristor TR1 (IGCT) in parallel with mechanical switch K1, first resistance R1, one way conducting device D1 (diode), first electric capacity C1, first semiconductor switch Q1 (audion), first voltage-stabilizing device Z1 (Zener diode), second resistance R2, the first resistance R1, one way conducting device D1, first electric capacity C1 is in series the first series circuit, the two ends of the first series circuit respectively with the first anode (the first end of IGCT) of bidirectional thyristor TR1, the second plate (the 3rd end of IGCT) of bidirectional thyristor TR1 connects, and the first electric capacity C1 passes through the second resistance R2, first semiconductor switch Q1, the trigger electrode of bidirectional thyristor TR1, the first anode of bidirectional thyristor TR1 forms discharge loop, first electric capacity C1 and the first voltage-stabilizing device Z1 in parallel (can also the first electric capacity C1 in parallel with the series circuit that one way conducting device D1 is in series and the first voltage-stabilizing device Z1, the resistance to pressure request of one way conducting device D1 reduces, but the energy consumption of the first resistance R1 doubles), the first electric capacity C1 passes through the second resistance R2, the trigger electrode of the first semiconductor switch Q1 and bidirectional thyristor TR1, the first anode of bidirectional thyristor TR1 is in parallel, and the first resistance R1 is connected with one way conducting device D1, and the power supply of second plate passes through the first resistance R1, one way conducting device D1 is negatively charged to the first electric capacity C1, and the negatively charged end of the first electric capacity C1 passes through the second resistance R2, the trigger electrode of the first semiconductor switch Q1 and bidirectional thyristor TR1 is connected, and the other end of the first electric capacity C1 is connected with the first anode of bidirectional thyristor TR1. second resistance R2 is connected in the discharge loop of the first electric capacity C1, for current limliting and the discharge time extending the first electric capacity C1, can omit when the first semiconductor switch Q1 band current limliting.
The present embodiment combination switch thyristor circuit, also include the 3rd resistance R3, second electric capacity C2, second voltage-stabilizing device Z2, semiconductor switch OPT2 (photoelectrical coupler), 3rd resistance R3, second electric capacity C2, second voltage-stabilizing device Z2 is in series the second series circuit, the two ends of the second series circuit respectively with the first anode of bidirectional thyristor TR1, the second plate of bidirectional thyristor TR1 connects, 3rd resistance R3, second electric capacity C2, semiconductor switch OPT2, the trigger electrode of bidirectional thyristor TR1, the first anode of bidirectional thyristor TR1 is in series series circuit, the first anode of bidirectional thyristor TR1 and one end of the second voltage-stabilizing device Z2 connect, second electric capacity C2, the common end that the series circuit that 3rd resistance R3 is in series is connected with semiconductor switch OPT2 is connected with the other end of the second voltage-stabilizing device Z2.
Operation principle: under bidirectional thyristor TR1 cut-off and mechanical switch K1 disjunction state, the voltage at bidirectional thyristor TR1 major loop two ends passes through the first resistance R1, first electric capacity C1 is charged (the voltage stabilizing value that its fully charged magnitude of voltage is the first voltage-stabilizing device Z1) by one way conducting device D1, in connection process, when between the first anode and the second plate of bidirectional thyristor TR1 of bidirectional thyristor TR1, potential difference is zero or zero passage, first semiconductor switch Q1 inputs control signal, first semiconductor switch Q1 conducting, the electric charge of the first electric capacity C1 passes through the second resistance R2, first semiconductor switch Q1 triggers the conducting of bidirectional thyristor TR1 no-flashy-flow, then mechanical switch K1 Guan Bi, reach the purpose that no-flashy-flow is connected, in breaking course, before mechanical switch K1 disjunction, control semiconductor switch OPT2 conducting, when mechanical switch K1 is in non-zero points disjunction moment, two ends will produce mutation voltage, mutation voltage will make the second electric capacity C2 (capacitance is tens nanofarads) by bigger electric current, this electric current triggers bidirectional thyristor TR1 conducting by semiconductor switch OPT2, after mechanical switch K1 disjunction completes, turn off the conductivity control signal controlling semiconductor switch OPT2, bidirectional thyristor TR1 ends, and completes without electric arc breaking course.
In the present embodiment, except bidirectional thyristor TR1, the first resistance R1, one way conducting device D1, the 3rd resistance R3, the second electric capacity C2, other components and parts can adopt low pressure components and parts, has cost performance height, an advantage that reliability is high.
The embodiment two of combination switch thyristor circuit of the present invention, as shown in Figure 2:
A kind of combination switch thyristor circuit, it includes the bidirectional thyristor TR1 (IGCT) in parallel with mechanical switch K1, first resistance R1, one way conducting device D1 (diode), first electric capacity C1, first semiconductor switch OPT1 (photoelectrical coupler), first voltage-stabilizing device Z1 (Zener diode), second resistance R2, first resistance R1, first electric capacity C1, one way conducting device D1 is in series the first series circuit, the two ends of the first series circuit respectively with the first anode (the first end of IGCT) of bidirectional thyristor TR1, the second plate (the 3rd end of IGCT) of bidirectional thyristor TR1 connects, first electric capacity C1 passes through the first semiconductor switch OPT1, the first anode of bidirectional thyristor TR1, the trigger electrode of bidirectional thyristor TR1, second resistance R2 forms discharge loop, first electric capacity C1 is in parallel with the series circuit that one way conducting device D1 is in series and the first voltage-stabilizing device Z1, first electric capacity C1 passes through the first semiconductor switch OPT1, the trigger electrode of the second resistance R2 and bidirectional thyristor TR1, the first anode of bidirectional thyristor TR1 is in parallel, the power supply of the second plate of bidirectional thyristor TR1 passes through the first resistance R1, one way conducting device D1 is to the first electric capacity C1 positive charge, the negatively charged end of the first electric capacity C1 is connected by the trigger electrode of the second resistance R2 and bidirectional thyristor TR1, the other end of the first electric capacity C1 is connected by the second plate of the first resistance R1 and bidirectional thyristor TR1, the negatively charged end of the first electric capacity C1 is connected with the anode of one way conducting device D1, the negative electrode of one way conducting device D1 is connected with the first anode of bidirectional thyristor TR1, first electric capacity C1 is in parallel with the series circuit that one way conducting device D1 is in series and the first semiconductor switch OPT1. second resistance R2 is connected in the discharge loop of the first electric capacity C1, for current limliting and the discharge time extending the first electric capacity C1, can omit when the first semiconductor switch OPT1 band current limliting.
The present embodiment combination switch thyristor circuit, also include the 3rd resistance R3, second electric capacity C2, second voltage-stabilizing device Z2, semiconductor switch OPT2 (photoelectrical coupler), second electric capacity C2, 3rd resistance R3, second voltage-stabilizing device Z2 is in series the second series circuit, the two ends of the second series circuit respectively with the first anode of bidirectional thyristor TR1, the second plate of bidirectional thyristor TR1 connects, 3rd resistance R3, second electric capacity C2, semiconductor switch OPT2, the trigger electrode of bidirectional thyristor TR1, the first anode of bidirectional thyristor TR1 is in series series circuit, the first anode of bidirectional thyristor TR1 and one end of the second voltage-stabilizing device Z2 connect, second electric capacity C2, the common end that the series circuit that 3rd resistance R3 is in series is connected with semiconductor switch OPT2 is connected with the second voltage-stabilizing device Z2 other end.
Operation principle: under bidirectional thyristor TR1 cut-off and mechanical switch K1 disjunction state, the voltage at bidirectional thyristor TR1 major loop two ends passes through the first resistance R1, first electric capacity C1 is charged (the voltage stabilizing value that its fully charged magnitude of voltage is the first voltage-stabilizing device Z1) by one way conducting device D1, in connection process, when between the first anode and the second plate of bidirectional thyristor TR1 of bidirectional thyristor TR1, potential difference is zero or zero passage, first semiconductor switch OPT1 inputs control signal, first semiconductor switch OPT1 conducting, the electric charge of the first electric capacity C1 passes through the second resistance R2, first semiconductor switch OPT1 triggers the conducting of bidirectional thyristor TR1 no-flashy-flow, then mechanical switch K1 Guan Bi, reach the purpose that no-flashy-flow is connected, in breaking course, before mechanical switch K1 disjunction, control semiconductor switch OPT2 conducting, when mechanical switch K1 is in non-zero points disjunction moment, two ends will produce mutation voltage, mutation voltage will make the second electric capacity C2 (capacitance is tens nanofarads) by bigger electric current, this electric current triggers bidirectional thyristor TR1 conducting by semiconductor switch OPT2, after mechanical switch K1 disjunction completes, turn off the conductivity control signal controlling semiconductor switch OPT2, bidirectional thyristor TR1 ends, and completes without electric arc breaking course.
In the present embodiment, except bidirectional thyristor TR1, the first resistance R1, the 3rd resistance R3, the second electric capacity C2, other components and parts can adopt low pressure components and parts, has cost performance height, an advantage that reliability is high.
The embodiment three of combination switch thyristor circuit of the present invention, as shown in Figure 3:
A kind of combination switch thyristor circuit, it includes the unidirectional thyristor SCR1 (IGCT) in parallel with mechanical switch K1, first resistance R1, one way conducting device D1 (diode), first electric capacity C1, first semiconductor switch OPT1 (photoelectrical coupler), first voltage-stabilizing device Z1 (Zener diode), second resistance R2, first resistance R1, one way conducting device D1, first electric capacity C1 is in series the first series circuit, the two ends of the first series circuit respectively with the negative electrode (the first end of IGCT) of unidirectional thyristor SCR1, the anode (the 3rd end of IGCT) of unidirectional thyristor SCR1 connects, first electric capacity C1 passes through the second resistance R2, the trigger electrode of unidirectional thyristor SCR1, the negative electrode of unidirectional thyristor SCR1, first semiconductor switch OPT1 forms discharge loop, first electric capacity C1 in parallel with the series circuit that one way conducting device D1 is in series and the first voltage-stabilizing device Z1 (can also the first electric capacity C1 directly in parallel with the first voltage-stabilizing device Z1, the resistance to pressure request of one way conducting device D1 improves, but the energy consumption of the first resistance R1 declines one times), first electric capacity C1 passes through the second resistance R2, the trigger electrode of the first semiconductor switch OPT1 and unidirectional thyristor SCR1, the negative electrode of unidirectional thyristor SCR1 is in parallel, the power supply of the anode of unidirectional thyristor passes through the first resistance R1, one way conducting device D1 is negatively charged to the first electric capacity C1, the positive charge end of the first electric capacity C1 is connected with the negative electrode of one way conducting device D1, the anode of one way conducting device D1 is connected with the negative electrode of unidirectional thyristor SCR1, the positive charge end of the first electric capacity C1 is connected by the trigger electrode of the second resistance R2 and unidirectional thyristor SCR1, the other end of the first electric capacity C1 is connected by the anode of the first resistance R1 and unidirectional thyristor SCR1, second resistance R2 is connected in the discharge loop of the first electric capacity C1, for current limliting and the discharge time extending the first electric capacity C1, can omit when the first semiconductor switch OPT1 band current limliting.
The present embodiment combination switch thyristor circuit, also include the 3rd resistance R3, second electric capacity C2, second voltage-stabilizing device Z2, semiconductor switch OPT2 (photoelectrical coupler), 3rd resistance R3, second electric capacity C2, second voltage-stabilizing device Z2 is in series the second series circuit, the two ends of the second series circuit respectively with the negative electrode of unidirectional thyristor SCR1, the anode of unidirectional thyristor SCR1 connects, 3rd resistance R3, second electric capacity C2, semiconductor switch OPT2, the trigger electrode of unidirectional thyristor SCR1, the negative electrode of unidirectional thyristor SCR1 is in series series circuit, the negative electrode of unidirectional thyristor SCR1 and one end (anode) of the second voltage-stabilizing device Z2 connect, second electric capacity C2, the common end that the series circuit that 3rd resistance R3 is in series is connected with semiconductor switch OPT2 is connected with the second voltage-stabilizing device Z2 other end (negative electrode).
Operation principle: for capacitive load, under unidirectional thyristor SCR1 cut-off and mechanical switch K1 disjunction state, the voltage at unidirectional thyristor SCR1 major loop two ends passes through the first resistance R1, first electric capacity C1 is charged (the voltage stabilizing value that its fully charged magnitude of voltage is the first voltage-stabilizing device Z1) by one way conducting device D1, in connection process, when the negative electrode of unidirectional thyristor SCR1 is nagative potential by the anode of unidirectional thyristor SCR1, first semiconductor switch OPT1 inputs control signal, first semiconductor switch OPT1 conducting, the electric charge of electric capacity C1 passes through the second resistance R2, first semiconductor switch OPT1 triggers the conducting of unidirectional thyristor SCR1 no-flashy-flow, mechanical switch K1 is Guan Bi after unidirectional thyristor SCR1 turns on, reach the purpose that no-flashy-flow is connected, in breaking course, before mechanical switch K1 disjunction, control semiconductor switch OPT2 conducting, and control mechanical switch K1 by direction disjunction that mechanical switch K1 electric current is unidirectional thyristor SCR1 forward conduction, when mechanical switch K1 is in non-zero points disjunction moment, two ends will produce mutation voltage, mutation voltage will make the second electric capacity C2 (capacitance is tens nanofarads) by bigger electric current, this electric current triggers unidirectional thyristor SCR1 conducting by semiconductor switch OPT2, after mechanical switch K1 disjunction completes, turn off the conductivity control signal controlling semiconductor switch OPT2, unidirectional thyristor SCR1 ends, complete without electric arc breaking course, after unidirectional thyristor SCR1 current over-zero, load capacitance is fully charged, and the same direction voltage superposition of the voltage of load capacitance and electrical network, is prepared for no-flashy-flow quick-make next time to the first electric capacity C1 quick charge by one way conducting device D1
In the present embodiment, except unidirectional thyristor SCR1, first resistance R1, 3rd resistance R3, outside second electric capacity C2, other components and parts can adopt low pressure conventional components and parts, simultaneously because adopt a unidirectional thyristor design, adopt compared with the mode of two IGCT (unidirectional thyristor) inverse parallels or employing IGCT (unidirectional thyristor) reverse parallel connection one power diode with other, there is cost performance height, the simpler advantage of circuit, it turns off back loading capacitor residual voltage polarity for can determine that direction simultaneously, the residual voltage of load capacitance is utilized to pass through one way conducting device D1 to the first electric capacity C1 quick charge with the same direction voltage superposition of line voltage, there is secondary and put into fast advantage, it is under opposite direction bias state at unidirectional thyristor, provide semiconductor switch control signal, load capacitance can be made without any electric discharge, reach the advantage that quick no-flashy-flow puts into.
The embodiment four of combination switch thyristor circuit of the present invention, as shown in Figure 4:
A kind of combination switch thyristor circuit, it includes the unidirectional thyristor SCR1 (IGCT) in parallel with mechanical switch K1, first resistance R1, one way conducting device D1 (diode), first electric capacity C1, first semiconductor switch OPT1 (photoelectrical coupler), first voltage-stabilizing device Z1 (Zener diode), second resistance R2, diode D2, first resistance R1, one way conducting device D1, first electric capacity C1 is in series the first series circuit, the two ends of the first series circuit respectively with the negative electrode (the first end of IGCT) of unidirectional thyristor SCR1, the anode (the 3rd end of IGCT) of unidirectional thyristor SCR1 connects, first electric capacity C1 passes through the second resistance R2, diode D2, first semiconductor switch OPT1, the trigger electrode of unidirectional thyristor SCR1, the negative electrode of unidirectional thyristor SCR1 forms discharge loop, first electric capacity C1 in parallel with the series circuit that one way conducting device D1 is in series and the first voltage-stabilizing device Z1 (can also the first electric capacity C1 directly in parallel with the first voltage-stabilizing device Z1, the resistance to pressure request of one way conducting device D1 improves, but the energy consumption of the first resistance R1 declines one times), first electric capacity C1 passes through the second resistance R2, diode D2, the trigger electrode of the first semiconductor switch OPT1 and unidirectional thyristor SCR1, the negative electrode of unidirectional thyristor SCR1 is in parallel, the power supply of the anode of unidirectional thyristor SCR1 passes through the first resistance R1, one way conducting device D1 is to the first electric capacity C1 positive charge, the positive charge end of the first electric capacity C1 is connected with the negative electrode of one way conducting device D1, the other end of the first electric capacity C1 is connected with the negative electrode of unidirectional thyristor SCR1, the anode of one way conducting device D1 and one end of the first resistance R1 connect, the other end of the first resistance R1 is connected with the anode of unidirectional thyristor SCR1, the positive charge end of the first electric capacity C1 passes through the second resistance R2, diode D2, the trigger electrode of the first semiconductor switch OPT1 and unidirectional thyristor SCR1 is connected, second resistance R2 is connected in the discharge loop of the first electric capacity C1, for current limliting and the discharge time extending the first electric capacity C1, can omit when the first semiconductor switch OPT1 band current limliting.
The present embodiment combination switch thyristor circuit, also include the 3rd resistance R3, second electric capacity C2, second voltage-stabilizing device Z2, 3rd resistance R3, second electric capacity C2, second voltage-stabilizing device Z2 is in series the second series circuit, the two ends of the second series circuit respectively with the negative electrode of unidirectional thyristor SCR1, the anode of unidirectional thyristor SCR1 connects, 3rd resistance R3, second electric capacity C2, first semiconductor switch OPT1, the trigger electrode of unidirectional thyristor SCR1, the negative electrode of unidirectional thyristor SCR1 is in series series circuit, the negative electrode of unidirectional thyristor SCR1 and one end (anode) of the second voltage-stabilizing device Z2 connect, second electric capacity C2, series circuit and the common end of the first semiconductor switch OPT1 connection that 3rd resistance R3 is in series are connected with the second voltage-stabilizing device Z2 other end (negative electrode).
Operation principle: under unidirectional thyristor SCR1 cut-off and mechanical switch K1 disjunction state, the voltage at unidirectional thyristor SCR1 major loop two ends passes through the first resistance R1, first electric capacity C1 is charged (the voltage stabilizing value that its fully charged magnitude of voltage is the first voltage-stabilizing device Z1) by one way conducting device D1, in connection process, when the negative electrode of unidirectional thyristor SCR1 is nagative potential by the anode of unidirectional thyristor SCR1, first semiconductor switch OPT1 inputs control signal, first semiconductor switch OPT1 conducting, the electric charge of the first electric capacity C1 passes through the second resistance R2, diode D2, first semiconductor switch OPT1 triggers the conducting of unidirectional thyristor SCR1 no-flashy-flow, mechanical switch K1 is Guan Bi after unidirectional thyristor SCR1 turns on, reach the purpose that no-flashy-flow is connected,In breaking course, before mechanical switch K1 disjunction, control the first semiconductor switch OPT1 conducting, and control mechanical switch K1 by direction disjunction that mechanical switch K1 electric current is unidirectional thyristor SCR1 forward conduction, when mechanical switch K1 is in non-zero points disjunction moment, two ends will produce mutation voltage, mutation voltage will make the second electric capacity C2 (capacitance is tens nanofarads) by bigger electric current, this electric current triggers unidirectional thyristor SCR1 conducting by the first semiconductor switch OPT1, after mechanical switch K1 disjunction completes, turn off the conductivity control signal controlling the first semiconductor switch OPT1, unidirectional thyristor SCR1 ends, complete without electric arc breaking course.
The present embodiment, except unidirectional thyristor SCR1, the first resistance R1, the 3rd resistance R3, the second electric capacity C2, other components and parts can adopt low pressure conventional components and parts, simultaneously because adopt a unidirectional thyristor design, adopt with other compared with mode of two IGCT (unidirectional thyristor) reverse parallel connections or employing IGCT (unidirectional thyristor) reverse parallel connection one power diode, there is cost performance height, the simpler advantage of circuit.
Annexation between each components and parts of above example includes being directly connected to, is indirectly connected with, directly in parallel, indirectly in parallel, in three-phase or multipole switch during application, increase corresponding way, operation principle is identical, still at this patent protection domain.
Above example, the voltage stabilizing value of voltage-stabilizing device Z1 can set that as about 20V, the capacitance of electric capacity C1 can set that to be 100 microFarads, the discharge charge of electric capacity C1 enough meets the instantaneous trigger electric current triggering IGCT (unidirectional brilliant lock or bidirectional thyristor), first resistance R1 can adopt resistance, can much smaller than the minimum trigger current (trigger current of the reliable triggering and conducting of general tens amperes of IGCTs is tens milliamperes) triggered needed for turn on thyristors by the electric current of the first resistance R1, the resistance value of the first resistance R1 can be relatively larger, operating current can set that to be in 1 milliampere, even if being set as 1 milliampere, running voltage is 380V, then the first resistance R1 power consumption is only 0.38W, such as running voltage 220V, then the first resistance R1 power consumption is only 0.22W, first element R1 can also use an electric capacity instead, or adopts a resistance and a capacitor seriesing circuit, and operation principle is identical, also in this patent protection domain.
In actual applications, the first semiconductor switch OPT1, semiconductor switch OPT2 can be that an audion, a photoelectrical coupler or a photoelectrical coupler drive transistor circuit (see Fig. 5).
Combination switch thyristor circuit of the present invention, when using in single-phase ac power supply system, is also defined as the neutral conductor relative to the other end power supply of first end (i.e. the main circuit terminal of IGCT) of IGCT.
In sum, the invention have the advantages that
1. the triggering signal of IGCT is directly provided by current limiting element by AC network, it is not necessary to transformator, switch without high-pressure electronic, has reliability height, an advantage that cost performance is high.
2. adopting capacitance energy storage triggering mode, instantaneous output current is big, burst capability is strong, and current limiting element operating current can much smaller than the minimum trigger current triggering turn on thyristors simultaneously, and operating power consumption is low.
3. when for capacitive load, being absent from owing to transformator triggers the zero cross fired blind area that the own voltage drop of pulse duty factor and high-pressure electronic on-off circuit brings, connection is shoved less.

Claims (15)

1. a combination switch thyristor circuit, it is characterized in that: it includes an IGCT in parallel with mechanical switch, first resistance, one one way conducting device, first electric capacity, first semiconductor switch, first voltage-stabilizing device, described first resistance, described one way conducting device, described first capacitances in series forms the first series circuit, one end of described first series circuit is connected with the first end of described IGCT, the other end of described first series circuit and the three-terminal link of described IGCT, described first electric capacity passes through described first semiconductor switch, second end of described IGCT, described first end forms discharge loop, described first electric capacity is in parallel with described first voltage-stabilizing device with the series circuit that described one way conducting device is in series with described first voltage-stabilizing device the first electric capacity in parallel or described.
2. combination switch thyristor circuit according to claim 1, is characterized in that: described first electric capacity is in parallel by described first semiconductor switch and described second end, described first end.
3. combination switch thyristor circuit according to claim 1, is characterized in that: by the electric current of described first resistance less than the minimum trigger current triggered needed for described turn on thyristors.
4. combination switch thyristor circuit according to claim 1, is characterized in that: described first voltage-stabilizing device is a Zener diode, and described one way conducting device is a diode.
5. combination switch thyristor circuit according to claim 1, is characterized in that: described first semiconductor switch is that an audion, a photoelectrical coupler or a photoelectrical coupler drive transistor circuit.
6. combination switch thyristor circuit according to claim 5, is characterized in that: also including the second resistance, described second resistant series is in described discharge loop.
7. combination switch thyristor circuit according to claim 1, it is characterized in that: described IGCT is bidirectional thyristor, described first end is the first anode of described bidirectional thyristor, described second end is the trigger electrode of described bidirectional thyristor, and described 3rd end is the second plate of described bidirectional thyristor.
8. combination switch thyristor circuit according to claim 7, it is characterized in that: described first resistance is connected with described one way conducting device, the power supply of described second plate is negatively charged to described first electric capacity by described first resistance, described one way conducting device, the negatively charged end of described first electric capacity is connected with described trigger electrode by described first semiconductor switch, and the other end of described first electric capacity is connected with the described first anode.
9. combination switch thyristor circuit according to claim 7, it is characterized in that: the negatively charged end of described first electric capacity is connected with the anode of described one way conducting device, the other end of described first electric capacity is connected with described second plate by described first resistance, the negative electrode of described one way conducting device is connected with the first anode of described bidirectional thyristor, the negatively charged end of described first electric capacity is connected with described trigger electrode, and described first electric capacity is in parallel with described first semiconductor switch with the series circuit that described one way conducting device is in series.
10. combination switch thyristor circuit according to claim 1, it is characterized in that: described IGCT is unidirectional thyristor, described first end is the negative electrode of described unidirectional thyristor, and described second end is the trigger electrode of described unidirectional thyristor, and described 3rd end is the anode of described unidirectional thyristor.
11. combination switch thyristor circuit according to claim 10, it is characterized in that: the power supply of the anode of described unidirectional thyristor by described first resistance, described one way conducting device to described first electric capacity positive charge, the positive charge end of described first electric capacity is connected with described trigger electrode by described first semiconductor switch, and the other end of described first electric capacity is connected with the negative electrode of described unidirectional thyristor.
12. combination switch thyristor circuit according to claim 10, it is characterized in that: the positive charge end of described first electric capacity is connected with the negative electrode of described one way conducting device, the other end of described first electric capacity is connected with one end of described first resistance, the other end of described first resistance is connected with the anode of described unidirectional thyristor, the anode of described one way conducting device is connected with the negative electrode of described unidirectional thyristor, the positive charge end of described first electric capacity is connected with described trigger electrode, described first electric capacity is in parallel with described first semiconductor switch with the series circuit that described one way conducting device is in series.
13. the combination switch thyristor circuit according to any claim in claim 1 to 12, it is characterized in that: also include the second electric capacity, 3rd resistance, second voltage-stabilizing device, described second electric capacity, described 3rd resistance, described second voltage-stabilizing device is in series the second series circuit, the two ends of described second series circuit respectively with described first end, described three-terminal link, described second electric capacity, described 3rd resistance, described second end, described first end and at least one semiconductor switch are in series a series circuit, described first end is connected with one end of described second voltage-stabilizing device, described second electric capacity, the common end that the series circuit of described 3rd resistant series is connected with described semiconductor switch is connected with the described second voltage-stabilizing device other end.
14. combination switch thyristor circuit according to claim 13, it is characterized in that: described semiconductor switch pressure voltage is less than the rated operational voltage of described IGCT major loop.
15. combination switch thyristor circuit according to claim 14, it is characterized in that: described semiconductor switch is an audion, a photoelectrical coupler or photoelectrical coupler driving transistor circuit or is described first semiconductor switch.
CN201610117832.0A 2015-02-27 2016-02-26 Combined switch thyristor circuit Withdrawn CN105656469A (en)

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CN2015100954048 2015-02-27
CN201510095404 2015-02-27
CN201510715771 2015-10-21
CN2015107157713 2015-10-21

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017125055A1 (en) * 2016-01-24 2017-07-27 广州市金矢电子有限公司 Hybrid switch
WO2018161833A1 (en) * 2017-03-05 2018-09-13 广州市金矢电子有限公司 Semi-controlled device drive throttling device
CN109698683A (en) * 2017-10-23 2019-04-30 新乡市振源电器股份有限公司 The driving device and high-tension apparatus of high-pressure thyristor
CN111864616A (en) * 2020-06-22 2020-10-30 深圳供电局有限公司 Display device control circuit and five-prevention locking system
CN112740352A (en) * 2018-10-22 2021-04-30 郭桥石 Arc extinguishing circuit, arc extinguishing device and switch system

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017125055A1 (en) * 2016-01-24 2017-07-27 广州市金矢电子有限公司 Hybrid switch
WO2018161833A1 (en) * 2017-03-05 2018-09-13 广州市金矢电子有限公司 Semi-controlled device drive throttling device
CN109698683A (en) * 2017-10-23 2019-04-30 新乡市振源电器股份有限公司 The driving device and high-tension apparatus of high-pressure thyristor
CN112740352A (en) * 2018-10-22 2021-04-30 郭桥石 Arc extinguishing circuit, arc extinguishing device and switch system
CN111864616A (en) * 2020-06-22 2020-10-30 深圳供电局有限公司 Display device control circuit and five-prevention locking system

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Application publication date: 20160608