CN111416044A - 一种平铺式壳芯结构钙钛矿纳米线的芯层及其太阳能电池制作方法 - Google Patents
一种平铺式壳芯结构钙钛矿纳米线的芯层及其太阳能电池制作方法 Download PDFInfo
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- CN111416044A CN111416044A CN202010064858.XA CN202010064858A CN111416044A CN 111416044 A CN111416044 A CN 111416044A CN 202010064858 A CN202010064858 A CN 202010064858A CN 111416044 A CN111416044 A CN 111416044A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111952463A (zh) * | 2020-08-26 | 2020-11-17 | 合肥工业大学 | 一种大面积钙钛矿纳米线阵列的制备方法 |
CN116600613A (zh) * | 2023-07-17 | 2023-08-15 | 四川京龙光电科技有限公司 | 一种钙钛矿柔性显示器件制备方法及柔性显示器件 |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080036038A1 (en) * | 2006-03-10 | 2008-02-14 | Hersee Stephen D | PULSED GROWTH OF CATALYST-FREE GROWITH OF GaN NANOWIRES AND APPLICATION IN GROUP III NITRIDE SEMICONDUCTOR BULK MATERIAL |
US20130019932A1 (en) * | 2011-07-18 | 2013-01-24 | Gwangju Institute Of Science And Technology | Nanostructure Array Substrate, Method for Fabricating the Same and Dye-Sensitized Solar Cell Using the Same |
US20130075693A1 (en) * | 2011-09-26 | 2013-03-28 | Glo Ab | Coalesced nanowire structures with interstitial voids and method for manufacturing the same |
WO2013049606A2 (en) * | 2011-09-28 | 2013-04-04 | University Of Connecticut | Metal oxide nanorod arrays on monolithic substrates |
KR20130093209A (ko) * | 2012-02-14 | 2013-08-22 | 재단법인대구경북과학기술원 | 코어-쉘 나노와이어를 이용한 태양전지 |
JP2013216548A (ja) * | 2012-04-11 | 2013-10-24 | Mitsui Chemicals Inc | 二酸化チタン薄膜構造体の製造方法、二酸化チタン薄膜構造体およびそれを用いた色素増感太陽電池素子 |
CN106710669A (zh) * | 2015-07-23 | 2017-05-24 | 北京华纳高科科技有限公司 | 一种可绕曲金属网格透明导电薄膜制备方法及其制品 |
CN108400179A (zh) * | 2018-04-27 | 2018-08-14 | 安阳师范学院 | 一种层间组分递变的水平排布层堆叠纳米线薄膜柔性太阳能电池 |
CN108493344A (zh) * | 2018-04-16 | 2018-09-04 | 重庆科技学院 | 壳芯结构钙钛矿纳米线阵列太阳能电池 |
IL261680A (en) * | 2018-09-06 | 2019-01-31 | Ernesto Joselevich | Photovoltaic devices are based on guided nanowire arrays |
CN109473529A (zh) * | 2018-09-28 | 2019-03-15 | 华中科技大学鄂州工业技术研究院 | 纳米阵列结构薄膜、制备方法及led器件 |
CN110224068A (zh) * | 2019-07-02 | 2019-09-10 | 电子科技大学中山学院 | 一种基于钙钛矿纳米线的光探测结构 |
CN110611030A (zh) * | 2019-10-14 | 2019-12-24 | 常熟理工学院 | 具有阵列结构电子传输层的钙钛矿太阳能电池及其制备方法 |
-
2020
- 2020-01-20 CN CN202010064858.XA patent/CN111416044B/zh active Active
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080036038A1 (en) * | 2006-03-10 | 2008-02-14 | Hersee Stephen D | PULSED GROWTH OF CATALYST-FREE GROWITH OF GaN NANOWIRES AND APPLICATION IN GROUP III NITRIDE SEMICONDUCTOR BULK MATERIAL |
US20130019932A1 (en) * | 2011-07-18 | 2013-01-24 | Gwangju Institute Of Science And Technology | Nanostructure Array Substrate, Method for Fabricating the Same and Dye-Sensitized Solar Cell Using the Same |
US20130075693A1 (en) * | 2011-09-26 | 2013-03-28 | Glo Ab | Coalesced nanowire structures with interstitial voids and method for manufacturing the same |
WO2013049606A2 (en) * | 2011-09-28 | 2013-04-04 | University Of Connecticut | Metal oxide nanorod arrays on monolithic substrates |
KR20130093209A (ko) * | 2012-02-14 | 2013-08-22 | 재단법인대구경북과학기술원 | 코어-쉘 나노와이어를 이용한 태양전지 |
JP2013216548A (ja) * | 2012-04-11 | 2013-10-24 | Mitsui Chemicals Inc | 二酸化チタン薄膜構造体の製造方法、二酸化チタン薄膜構造体およびそれを用いた色素増感太陽電池素子 |
CN106710669A (zh) * | 2015-07-23 | 2017-05-24 | 北京华纳高科科技有限公司 | 一种可绕曲金属网格透明导电薄膜制备方法及其制品 |
CN108493344A (zh) * | 2018-04-16 | 2018-09-04 | 重庆科技学院 | 壳芯结构钙钛矿纳米线阵列太阳能电池 |
CN108400179A (zh) * | 2018-04-27 | 2018-08-14 | 安阳师范学院 | 一种层间组分递变的水平排布层堆叠纳米线薄膜柔性太阳能电池 |
IL261680A (en) * | 2018-09-06 | 2019-01-31 | Ernesto Joselevich | Photovoltaic devices are based on guided nanowire arrays |
CN109473529A (zh) * | 2018-09-28 | 2019-03-15 | 华中科技大学鄂州工业技术研究院 | 纳米阵列结构薄膜、制备方法及led器件 |
CN110224068A (zh) * | 2019-07-02 | 2019-09-10 | 电子科技大学中山学院 | 一种基于钙钛矿纳米线的光探测结构 |
CN110611030A (zh) * | 2019-10-14 | 2019-12-24 | 常熟理工学院 | 具有阵列结构电子传输层的钙钛矿太阳能电池及其制备方法 |
Non-Patent Citations (2)
Title |
---|
王盼等: "金属辅助化学刻蚀法制备硅纳米线的研究进展", 《材料导报》 * |
王盼等: "金属辅助化学刻蚀法制备硅纳米线的研究进展", 《材料导报》, no. 09, 10 May 2019 (2019-05-10) * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111952463A (zh) * | 2020-08-26 | 2020-11-17 | 合肥工业大学 | 一种大面积钙钛矿纳米线阵列的制备方法 |
CN111952463B (zh) * | 2020-08-26 | 2023-04-07 | 合肥工业大学 | 一种大面积钙钛矿纳米线阵列的制备方法 |
CN116600613A (zh) * | 2023-07-17 | 2023-08-15 | 四川京龙光电科技有限公司 | 一种钙钛矿柔性显示器件制备方法及柔性显示器件 |
CN116600613B (zh) * | 2023-07-17 | 2023-09-26 | 四川京龙光电科技有限公司 | 一种钙钛矿柔性显示器件制备方法及柔性显示器件 |
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