CN111415926B - Micro light-emitting diode display panel, manufacturing method thereof and display device - Google Patents
Micro light-emitting diode display panel, manufacturing method thereof and display device Download PDFInfo
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- CN111415926B CN111415926B CN202010129244.5A CN202010129244A CN111415926B CN 111415926 B CN111415926 B CN 111415926B CN 202010129244 A CN202010129244 A CN 202010129244A CN 111415926 B CN111415926 B CN 111415926B
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67796—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations with angular orientation of workpieces
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
Abstract
The application discloses little emitting diode display panel, manufacturing method and display device thereof relates to the technical field of display, and includes: a receiving substrate and a plurality of micro light emitting diodes; the receiving substrate comprises a substrate and a pixel limiting layer, the pixel limiting layer is provided with a plurality of grooves, and the micro light-emitting diodes are positioned in the grooves; at least part of the side wall of the groove is covered with conductive metal, and the conductive metal comprises a first binding electrode; the micro light-emitting diode comprises a light-emitting body, a first electrode and a second electrode, wherein the first electrode is in contact with the first binding electrode; and an included angle between the surface of the first electrode, which is in contact with the first binding electrode, and the bottom surface of the groove is an obtuse angle. This application is the obtuse angle through setting up the contained angle between the surface that first electrode and first binding electrode contacted and the bottom surface of recess, and the inclined plane contact between first electrode and the first binding electrode, and when in use received the impact, the ability that little emitting diode resisted peeling off was stronger, was difficult for droing, was favorable to improving the reliability of product.
Description
Technical Field
The application relates to the technical field of display, in particular to a micro light-emitting diode display panel, a manufacturing method thereof and a display device.
Background
A Micro light-emitting diode (Micro LED) is a micron-sized LED, and the Micro LED has a small size, so that the Micro LED can be used as a pixel on a display panel, and the display panel manufactured by the Micro LED can be called a Micro LED display panel. Compared with an Organic Light-Emitting Diode (OLED) display panel, the Micro LED display panel has a longer service life and a better viewing angle than the OLED display panel, so the Micro LED display technology becomes the focus of research in the current display technology field.
In the manufacturing process of the micro-led display panel, the micro-leds are first formed on the original substrate, and then the micro-leds are adsorbed from the original substrate to a predetermined position on the receiving substrate by the transfer head. After the micro light emitting diode is transferred to the receiving substrate, it needs to be bonded with a pre-mounted bonding material on the receiving substrate. The existing Micro LED is adhered to an adhesive layer on a receiving substrate through an electrode positioned at the lower end of a light emitting device, and the electrode is of a planar structure, so that the Micro LED is easy to misplace when being transferred in a large quantity, the Micro LED is not firmly adhered, a dead pixel is formed, and the production yield of a display is reduced. In addition, Micro LEDs are also prone to falling off during use, resulting in poor display.
Disclosure of Invention
In view of this, the present application provides a Micro light emitting diode display panel, a manufacturing method thereof and a display device, which are used to solve the problem that a Micro LED in a display is easy to fall off, thereby causing poor display.
In order to solve the technical problem, the following technical scheme is adopted:
in a first aspect, the present application provides a micro light emitting diode display panel, comprising: a receiving substrate and a plurality of micro light emitting diodes;
the receiving substrate comprises a substrate and a pixel defining layer positioned on one side of the substrate, the pixel defining layer is provided with a plurality of grooves, the openings of the grooves face to the direction pointing away from the substrate by the pixel defining layer, and the micro light-emitting diodes are positioned in the grooves;
at least part of the side wall of the groove is covered with conductive metal, and the conductive metal comprises a first binding electrode;
the micro light-emitting diode comprises a light-emitting body, a first electrode and a second electrode, wherein the first electrode and the second electrode are respectively electrically connected with the light-emitting body;
wherein an included angle between a surface of the first electrode in contact with the first binding electrode and the bottom surface of the groove is an obtuse angle.
In a second aspect, the present application provides a method for manufacturing a micro light emitting diode display panel, including:
providing a substrate;
forming a pixel defining layer on the substrate, the pixel defining layer being provided with a plurality of grooves having openings directed away from the substrate by the pixel defining layer;
forming a conductive metal on at least a portion of the sidewall of the recess, the conductive metal including a first binding electrode;
placing a micro light-emitting diode in the groove, wherein the micro light-emitting diode comprises a light-emitting body, a first electrode and a second electrode, the first electrode and the second electrode are respectively and electrically connected with the light-emitting body, and the first electrode is in contact with and bound with the first binding electrode;
wherein an included angle between a surface of the first electrode in contact with the first binding electrode and the bottom surface of the groove is an obtuse angle.
In a third aspect, the present application further provides a display device, including a micro light emitting diode display panel, where the micro light emitting diode display panel is the micro light emitting diode display panel provided in the present application.
Compared with the prior art, the micro light-emitting diode display panel, the manufacturing method thereof and the display device provided by the invention at least realize the following beneficial effects:
this application sets up the recess on the pixel is injectd the layer, make little emitting diode be located the recess, and set up the first electrode and the first contained angle that binds between the surface that contacts of electrode and the bottom surface of recess be the obtuse angle, promptly, the side that sets up first electrode on little emitting diode is the inclined plane, so, when little emitting diode from original base plate rendition to receiving substrate on, push down little emitting diode and make little emitting diode embedding recess in, first electrode hugs closely on first binding electrode naturally, can reduce little emitting diode's the degree of difficulty of binding. And because the first electrode is in inclined plane contact with the first binding electrode, dislocation is not easy to occur, and the production yield of the display panel is favorably improved. And when the micro light-emitting diode is impacted in use, the micro light-emitting diode has stronger stripping resistance, so that the micro light-emitting diode is bonded with the receiving substrate more firmly and is not easy to fall off, and the reliability of the product is improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:
fig. 1 is a top view of a micro led display panel according to an embodiment of the present disclosure;
FIG. 2 is an AA' cross-sectional view of the micro LED display panel of FIG. 1;
FIG. 3 is a cross-sectional view of another AA' of the micro LED display panel of FIG. 1;
FIG. 4 is a cross-sectional view of another AA' of the micro LED display panel of FIG. 1;
FIG. 5 is a cross-sectional view of another AA' of the micro LED display panel of FIG. 1;
fig. 6 is a schematic connection diagram of second electrodes in a micro light emitting diode display panel according to an embodiment of the present disclosure;
fig. 7 is a schematic structural diagram of a micro light emitting diode according to an embodiment of the present disclosure;
fig. 8 is a schematic diagram illustrating a positional relationship between a micro light emitting diode and a groove according to an embodiment of the present disclosure;
fig. 9 is a schematic view illustrating another positional relationship between a micro light emitting diode and a groove according to an embodiment of the present disclosure;
fig. 10 is a flowchart illustrating a method for manufacturing a micro led display panel according to an embodiment of the present disclosure;
fig. 11 is a schematic structural diagram of a display device according to an embodiment of the present disclosure.
Detailed Description
As used in the specification and in the claims, certain terms are used to refer to particular components. As one skilled in the art will appreciate, manufacturers may refer to a component by different names. This specification and claims do not intend to distinguish between components that differ in name but not function. In the following description and in the claims, the terms "include" and "comprise" are used in an open-ended fashion, and thus should be interpreted to mean "include, but not limited to. "substantially" means within an acceptable error range, within which a person skilled in the art can solve the technical problem to substantially achieve the technical result. Furthermore, the term "coupled" is intended to encompass any direct or indirect electrical coupling. Thus, if a first device couples to a second device, that connection may be through a direct electrical coupling or through an indirect electrical coupling via other devices and couplings. The description which follows is a preferred embodiment of the present application, but is made for the purpose of illustrating the general principles of the application and not for the purpose of limiting the scope of the application. The protection scope of the present application shall be subject to the definitions of the appended claims. The same parts between the embodiments are not described in detail.
In the manufacturing process of the micro-led display panel, the micro-leds are first formed on the original substrate, and then the micro-leds are adsorbed from the original substrate to a predetermined position on the receiving substrate by the transfer head. After the micro light emitting diode is transferred to the receiving substrate, it needs to be bonded with a pre-mounted bonding material on the receiving substrate. The existing Micro LED is adhered to an adhesive layer on a receiving substrate through an electrode positioned at the lower end of a light emitting device, and the electrode is of a planar structure, so that the Micro LED is easy to misplace when being transferred in a large quantity, the Micro LED is not firmly adhered, a dead pixel is formed, and the production yield of a display is reduced. In addition, Micro LEDs are also prone to falling off during use, resulting in poor display.
In view of this, the present application provides a micro light emitting diode display panel, a method for manufacturing the same, and a display device, where an included angle between a surface of a first electrode in contact with a first binding electrode and a bottom surface of a groove is set to be an obtuse angle, and the first electrode is in inclined surface contact with the first binding electrode, so that when the micro light emitting diode display panel is impacted in use, the micro light emitting diode display panel has a stronger anti-peeling capability, is not easy to fall off, and is beneficial to improving the reliability of a product.
The following detailed description is to be read in connection with the drawings and the detailed description.
Fig. 1 is a top view of a micro led display panel 100 according to an embodiment of the present disclosure, fig. 2 is an AA' cross-sectional view of the micro led display panel 100 shown in fig. 1, and referring to fig. 1 and fig. 2, the micro led display panel 100 according to the embodiment of the present disclosure includes: a receiving substrate 110 and a plurality of micro light emitting diodes 130;
the receiving substrate 110 includes a substrate 101 and a pixel defining layer 102 on one side of the substrate 101, the pixel defining layer 102 is provided with a plurality of grooves 140, openings of the grooves 140 face a direction pointing away from the substrate 101 by the pixel defining layer 102, and the micro light emitting diodes 130 are located in the grooves 140;
at least part of the sidewall of the groove 140 is covered with a conductive metal 120, and the conductive metal 120 includes a first binding electrode 121;
the micro light emitting diode 130 includes a light emitting body 132, a first electrode 131 and a second electrode 133 electrically connected to the light emitting body 132, respectively, the first electrode 131 being in contact with the first binding electrode 121;
wherein, an included angle between a surface of the first electrode 131 contacting the first binding electrode 121 and the bottom surface of the groove 140 is an obtuse angle.
Specifically, referring to fig. 1 and fig. 2, the micro led display panel 100 provided in the present embodiment includes a receiving substrate 110, the receiving substrate 110 includes a substrate 101 and a pixel defining layer 102, the pixel defining layer 102 is provided with a plurality of grooves 140 having openings facing a light emitting surface, at least a portion of sidewalls of the grooves 140 is covered with a conductive metal 120, and the conductive metal 120 includes a first binding electrode 121. The micro led display panel 100 further includes a plurality of micro leds 130, each of the micro leds 130 includes a light emitting body 132, a first electrode 131 and a second electrode 133, and the first electrode 131 and the second electrode 133 are electrically connected to the light emitting body 132 respectively; the micro light emitting diode 130 is positioned in the groove 140, and the first electrode 131 is in contact with the first binding electrode 121, and a signal is provided to the first electrode 131 through the first binding electrode 121. An included angle between a surface of the first electrode 131 contacting the first binding electrode 121 and the bottom surface of the groove 140 is an obtuse angle, that is, a side surface of the micro light emitting diode 130 on which the first electrode 131 is disposed is an inclined surface, so that when the micro light emitting diode 130 is transferred from the original substrate to the receiving substrate 110, the micro light emitting diode 130 and the groove 140 are correspondingly disposed, in an embodiment, the micro light emitting diode 130 can be pressed down to embed the micro light emitting diode 130 into the groove 140, and the first electrode 131 naturally clings to the first binding electrode 121, so that the binding difficulty of the micro light emitting diode 130 can be reduced. Moreover, since the first electrode 131 is in oblique contact with the first binding electrode 121, the dislocation is not easy to occur, which is beneficial to improving the production yield of the display panel. And when the micro light emitting diode 130 is impacted in use, the stripping resistance of the micro light emitting diode is stronger, so that the micro light emitting diode 130 is bonded with the receiving substrate 110 more firmly and is not easy to fall off, and the reliability of the product is improved.
The micro leds 130 in this application may include red, green and blue micro leds, and a display pixel is composed of one red, one green and one blue micro led. Of course, the composition of a display pixel by three color sub-pixels of red, green and blue is merely illustrative and not meant to limit the present application, and in various embodiments, the display pixel may also be composed of four color sub-pixels, such as: one red micro light emitting diode, one green micro light emitting diode, one blue micro light emitting diode and one white micro light emitting diode constitute one display pixel.
It should be noted that the groove 140 shown in fig. 2 is only for schematically illustrating the position relationship between the groove 140 and the micro light emitting diode 130, and does not represent the actual arrangement manner of the groove 140, nor represents the actual shape, size, number, etc. of the groove 140, and in a specific application, the shape, depth, size, etc. of the groove 140 may be set according to actual needs, which is not limited in this application. The material of the conductive metal 120 may be one or a combination of indium, gold, tin, and the like.
For the groove 140 disposed in the pixel defining layer 102, the groove 140 may penetrate through the pixel defining layer 102 in a direction perpendicular to the plane of the substrate 101, and in another embodiment, the groove 140 may not penetrate through the pixel defining layer 102, which may be determined according to an actual process.
Alternatively, referring to fig. 2, an included angle between the portion of the sidewall covering the conductive metal 120 and the bottom surface of the groove 140 is an obtuse angle. Specifically, referring to fig. 2, in the present embodiment, an included angle α between a portion of the sidewall covering the conductive metal 120 and the bottom surface of the groove 140 is an obtuse angle, so that, after the conductive metal 120 is covered on the sidewall, the surface to be bonded of the conductive metal 120 is also an inclined surface, i.e. the included angle between the contact surface of the conductive metal 120 and the first electrode 131 and the bottom surface of the groove 140 is also an obtuse angle, when the micro light emitting diodes 130 are transferred from the original substrate to the receiving substrate 110, by pressing down the micro light emitting diodes 130, namely, the first electrode 131 and the second electrode 133 can naturally cling to the first binding electrode 121 and the second binding electrode, so as to reduce the binding difficulty of the micro light emitting diode 130, moreover, since the first electrode 131 and the first bonding electrode 121 and the second electrode 133 and the second bonding electrode are in inclined contact, the dislocation is not easy to occur, which is beneficial to improving the production yield of the display panel. And when the micro light emitting diode 130 is impacted in use, the stripping resistance of the micro light emitting diode is stronger, so that the micro light emitting diode 130 is bonded with the receiving substrate 110 more firmly and is not easy to fall off, and the reliability of the product is improved.
Optionally, referring to fig. 2, the conductive metal 120 further includes a second bonding electrode 122, and the second bonding electrode 122 and the first bonding electrode 121 are insulated from each other and disposed opposite to each other; the second bonding electrode 122 is in contact with the second electrode 133, and an included angle between a surface of the second electrode 133 in contact with the second bonding electrode 122 and the bottom surface of the groove 140 is an obtuse angle. Specifically, referring to fig. 2, in the present embodiment, the second bonding electrode 122 is disposed on the sidewall of the groove 140 at a position opposite to the first bonding electrode 121, the second bonding electrode 122 is in contact with the second electrode 133, and the second bonding electrode 122 provides a signal to the second electrode 133. A gap is formed between the second bonding electrode 122 and the first bonding electrode 121, and the first bonding electrode 121 and the second bonding electrode 122 are insulated from each other by the gap, so that the problem of signal interference between the first bonding electrode 121 and the second bonding electrode 122 is avoided, and the micro light emitting diode 130 can emit light normally, thereby ensuring normal display of the display panel.
In addition, in this embodiment, an included angle between a surface of the second electrode 133, which is in contact with the second binding electrode 122, and the bottom surface of the groove 140 is an obtuse angle, that is, a side surface of the micro light emitting diode 130, on which the second electrode 133 is disposed, is an inclined surface, so that two opposite sides of the micro light emitting diode 130 can be in contact with the binding electrodes in an inclined manner, so that the bonding between the micro light emitting diode 130 and the pixel defining layer 102 is firmer. When the micro light emitting diode 130 is transferred from the original substrate to the receiving substrate 110, the micro light emitting diode 130 is pressed down to embed the micro light emitting diode 130 into the groove 140, and the second electrode 133 naturally clings to the second binding electrode 122, so that the binding difficulty of the micro light emitting diode 130 can be reduced. Moreover, since the second electrode 133 and the second binding electrode 122 are in inclined contact, the dislocation is not easy to occur, which is beneficial to improving the production yield of the display panel. And when the micro light emitting diode 130 is impacted in use, the stripping resistance of the micro light emitting diode is stronger, so that the micro light emitting diode 130 is bonded with the receiving substrate 110 more firmly and is not easy to fall off, and the reliability of the product is improved.
Alternatively, fig. 3 is another AA' cross-sectional view of the micro led display panel 100 in fig. 1, referring to fig. 3, the bottom surface of the groove 140 further includes a protrusion 141, the protrusion 141 is located between the first and second binding electrodes 121 and 122 for insulating the first and second binding electrodes 121 and 122 from each other, the material of the protrusion 141 may be the same as that of the pixel defining layer 102, and optionally, the protrusion 141 may be formed at the same time when the groove 140 is formed. Specifically, referring to fig. 3, in the embodiment, a protrusion 141 is disposed at the bottom of the groove 140, the protrusion 141 is made of an insulating material, the protrusion 141 is located between the first binding electrode 121 and the second binding electrode 122, and the first binding electrode 121 and the second binding electrode 122 are separated by the protrusion 141, so that the first binding electrode 121 and the second binding electrode 122 are insulated from each other, the problem of electrical connection between the first binding electrode 121 and the second binding electrode 122 is avoided, and the micro light emitting diode 130 can emit light normally, thereby ensuring normal display of the display panel.
Alternatively, fig. 4 is a cross-sectional view of another AA 'of the micro led display panel 100 in fig. 1, and fig. 5 is a cross-sectional view of another AA' of the micro led display panel 100 in fig. 1, and referring to fig. 4 and 5, the receiving substrate 110 further includes a thin film transistor layer 103, and the thin film transistor layer 103 includes a plurality of thin film transistors 104 and is located between the substrate 101 and the pixel defining layer 102; the first bonding electrode 121 extends to the bottom surface of the recess 140 and is electrically connected to the thin film transistor 104. Specifically, referring to fig. 4 and 5, in this embodiment, a thin film transistor layer 103 is disposed between the substrate 101 and the pixel defining layer 102, and the first binding electrode 121 extends to the bottom surface of the groove 140, the first binding electrode 121 is electrically connected to the thin film transistor 104 through a portion located at the bottom surface of the groove 140, the thin film transistor 104 provides a voltage signal to the micro light emitting diode 130 through the first binding electrode 121, and the second electrode receives a constant voltage signal through the second binding electrode 122, and the micro light emitting diode 130 is driven to emit light according to the signals received by the first electrode 131 and the second electrode 133, so as to implement image display.
In order to electrically connect the first binding electrode 121 and the thin film transistor 104, a groove 140 may be disposed to penetrate the pixel defining layer 102 in a direction perpendicular to the substrate 101, as shown in fig. 4, such that the first binding electrode 121 extending to the bottom surface of the groove 140 is directly in contact with the source or drain of the thin film transistor 104, thereby electrically connecting the first binding electrode 121 and the thin film transistor 104. Of course, the groove 140 is made to penetrate through the pixel defining layer 102 in a direction perpendicular to the substrate 101, which is only an exemplary embodiment, and in other embodiments, the groove 140 may not penetrate through the pixel defining layer 102, and when the groove 140 does not penetrate through the pixel defining layer 102, as shown in fig. 5, the first binding electrode 121 may be electrically connected to the thin film transistor 104 through a via hole by providing the via hole on the pixel defining layer 102. In addition, other film layers may also be disposed between thin-film-transistor layer 103 and pixel defining layer 102, such as: the insulating layer is arranged, so that signal interference between the thin film transistor layer 103 and the pixel limiting layer 102 can be avoided, and normal transmission of signals is ensured; the planarization layer is arranged and is made of organic layers such as acrylic, polyimide or benzocyclobutene, the flatness can be increased, and the display effect is improved.
It should be noted that the first binding electrode 121 may be electrically connected to the source or the drain of the thin film transistor 104, which is not limited in this application, for example, when the first binding electrode 121 is electrically connected to the drain, a value of the constant signal may be set according to an output voltage of the drain, and when an output end of the drain is a positive voltage, the constant signal may be a negative voltage; alternatively, when the drain output terminal is a negative voltage, the constant signal may be a positive voltage, as long as the voltage difference between the two can drive the micro light emitting diode 130 to emit light, which is not limited in the present application. In addition, fig. 4 and 5 show the thin film transistor 104 having a top gate structure, and in addition, the thin film transistor 104 may also be a thin film transistor 104 having a bottom gate structure, which is not limited in the present application.
Optionally, with continued reference to fig. 4, a surface of the pixel defining layer 102 away from the substrate 101 is the first surface 105, the second binding electrodes 122 further include a portion extending to the first surface 105, and portions of the at least two second binding electrodes 122 extending to the first surface 105 are electrically connected. Specifically, referring to fig. 4, a surface of the pixel defining layer 102 away from the substrate 101 is a first surface 105, in this embodiment, the second binding electrode 122 is disposed to extend to the first surface 105, and a portion of the second binding electrode 122 extending to the first surface 105 is electrically connected, so that, when a power line is connected to one of the second binding electrodes 122 and provides a constant voltage signal thereto, other second binding electrodes 122 electrically connected to the second binding electrode 122 may also receive the constant voltage signal, and therefore, each second binding electrode 122 does not need to be connected to the power line, which is beneficial to saving space and reducing routing difficulty. In fig. 4, the second electrodes 133 of two adjacent micro light emitting diodes 130 are shown as being adjacent to each other. In another embodiment, as shown in fig. 6, fig. 6 is a schematic diagram illustrating a connection relationship of the second electrodes 133 in the micro light emitting diode display panel 100 provided in this embodiment of the present application, the first electrodes 131 and the second electrodes 133 of the micro light emitting diodes 130 are arranged in the same order, the second electrodes 133 of the adjacent micro light emitting diodes 130 can be electrically connected by the connection lines 137 located on the first surface 105 of the pixel defining layer 102, and the connection lines 137 are connected in a grid pattern, so that voltage signals can be uniformly transmitted to the second electrodes 133 of the micro light emitting diodes 130 through the grid pattern of the connection lines 137.
Optionally, fig. 7 is a schematic structural diagram of a micro light emitting diode 130 provided in the present embodiment, please refer to fig. 7, in which a light emitting body 132 includes a first type semiconductor layer, an active layer and a second type semiconductor layer which are stacked, and the active layer is located between the first type semiconductor layer and the second type semiconductor layer; the stacking direction of the first type semiconductor layer, the active layer and the second type semiconductor layer is perpendicular to the direction of the plane of the substrate 101; the first electrode 131 and the second electrode 133 are disposed opposite to each other in a first direction perpendicular to the stacking direction.
Specifically, referring to fig. 7, the light emitting body 132 includes a first type semiconductor layer 134, an active layer 135 and a second type semiconductor layer 136, the first type semiconductor layer 134, the active layer 135 and the second type semiconductor layer 136 are stacked along a direction perpendicular to a plane of the substrate 101, the active layer 135 is located between the first type semiconductor layer 134 and the second type semiconductor layer 136, wherein the first type semiconductor layer 134 and the second type semiconductor layer 136 are semiconductor layers with opposite polarities, for example, the first type semiconductor layer 134 may be an N-type semiconductor, the second type semiconductor layer 136 may be a P-type semiconductor, and the active layer 135 may be a multiple quantum well layer. In addition, the light emitting body 132 further includes a first junction 138, a second junction 139, and a high resistance layer, the first junction 138 contacting the first type semiconductor 134, the second junction 139 contacting the second type semiconductor 136, the high resistance layer for preventing the first junction 138 and the second type semiconductor 136 from forming an electrical contact therebetween, and for preventing the second junction 139 and the first type semiconductor 134 from forming an electrical contact therebetween. The first junction 138 and the first type semiconductor 134 are the same type semiconductor, and the doping concentration of the two is different, and the doping concentration of the first junction 138 is greater than the doping level of the first type semiconductor 134, so as to improve the electrical contact characteristics with the first electrode 131; the second plug 139 and the second type semiconductor 136 are the same type of semiconductor, and the doping concentration of the second plug 139 is different from that of the second type semiconductor 136, and the doping concentration of the second plug 139 is greater than that of the second type semiconductor 136, so as to improve the electrical contact characteristic with the second electrode 133. The first electrode 131 and the second electrode 133 are oppositely disposed along a first direction, where the first direction is perpendicular to the stacking direction, that is, the first electrode 131 and the second electrode 133 are respectively located at two opposite sides of the light emitting body 132, so that when the micro light emitting diode 130 is disposed in the groove 140, the first electrode 131 is directly contacted with the first binding electrode 121 located at the sidewall of the groove 140, and the second electrode 133 is directly contacted with the second binding electrode 122 located at the sidewall of the groove 140, which is very easy to realize the electrical connection between the micro light emitting diode 130 and the first binding electrode 121 and the second binding electrode 122, and is beneficial to reducing the binding difficulty, thereby simplifying the manufacturing difficulty of the micro light emitting diode display panel 100.
Optionally, fig. 8 is a schematic diagram illustrating a positional relationship between the micro light emitting diode 130 and the groove 140 provided in the embodiment of the present application, and fig. 9 is a schematic diagram illustrating another positional relationship between the micro light emitting diode 130 and the groove 140 provided in the embodiment of the present application, where a distance between a surface of the micro light emitting diode 130 close to the bottom surface of the groove 140 and the bottom surface of the groove 140 is greater than or equal to 0. Specifically, referring to fig. 8, when the end of the light emitting body 132 close to the groove 140 is larger, the micro light emitting diode 130 cannot be completely disposed in the groove 140, and the distance between the surface of the micro light emitting diode 130 close to the bottom surface of the groove 140 and the bottom surface of the groove 140 is greater than 0, at this time, the first electrode 131 is electrically connected to the first binding electrode 121 mainly by the contact of the end of the first electrode 131 close to the groove 140 and the contact of the end of the second electrode 133 close to the groove 140 and the second binding electrode 122, and the second electrode 133 is electrically connected to the second binding electrode 122. Certainly, the shape of the micro light emitting diode 130 may also be configured to match the shape of the groove 140, so that when the micro light emitting diode 130 is disposed in the groove 140, the micro light emitting diode 130 may be completely embedded in the groove 140, so that the distance between the surface of the micro light emitting diode 130 close to the bottom surface of the groove 140 and the bottom surface of the groove 140 is 0, the first electrode 131 is tightly attached to the first binding electrode 121, and the second electrode 133 is tightly attached to the second binding electrode 122, thereby ensuring normal transmission of signals, and ensuring normal display of a picture.
Based on the same inventive concept, the present application further provides a method for manufacturing a micro light emitting diode display panel, fig. 10 is a flowchart of a method for manufacturing a micro light emitting diode display panel provided in an embodiment of the present application, please refer to fig. 1 to 10, and the method for manufacturing a micro light emitting diode display panel provided in the present application includes:
step 10: providing a substrate 101;
step 20: forming a pixel defining layer 102 on a substrate 101, the pixel defining layer 102 being provided with a plurality of grooves 140, the openings of the grooves 140 facing a direction pointing away from the substrate 101 by the pixel defining layer 102;
step 30: forming a conductive metal 120 on at least a portion of the sidewall of the recess 140, the conductive metal 120 including a first bonding electrode 121;
step 40: placing the micro light emitting diode 130 in the groove 140, wherein the micro light emitting diode 130 comprises a light emitting body 132, and a first electrode 131 and a second electrode 133 which are respectively electrically connected with the light emitting body 132, and the first electrode 131 is in contact with and bonded to the first bonding electrode 121; wherein, an included angle between a surface of the first electrode 131 contacting the first binding electrode 121 and the bottom surface of the groove 140 is an obtuse angle.
Specifically, referring to fig. 1-10, the method for manufacturing a micro led display panel 100 provided in the present application includes first providing a substrate 101 in step 10, forming a pixel defining layer 102 on the substrate 101 through step 20, and forming a plurality of grooves 140 with openings facing a light-emitting surface on the pixel defining layer 102; then covering 30 a conductive metal 120 on at least a portion of the sidewalls of the recess 140, the conductive metal 120 including a first bonding electrode 121; finally, the micro light emitting diode 130 is placed in the groove 140 through step 40, the micro light emitting diode 130 includes a light emitting body 132, a first electrode 131 and a second electrode 133, the first electrode 131 and the second electrode 133 are respectively electrically connected with the light emitting body 132, and the first electrode 131 is in contact with the first binding electrode 121, and a signal is provided to the first electrode 131 through the first binding electrode 121. An included angle between a surface of the first electrode 131 in contact with the first binding electrode 121 and the bottom surface of the groove 140 is an obtuse angle, when the micro light emitting diode 130 is transferred from the original substrate to the receiving substrate 110, the micro light emitting diode 130 is pressed down to embed the micro light emitting diode 130 into the groove 140, and the first electrode 131 is naturally attached to the first binding electrode 121, so that the binding difficulty of the micro light emitting diode 130 can be reduced. Moreover, since the first electrode 131 is in oblique contact with the first binding electrode 121, the dislocation is not easy to occur, which is beneficial to improving the production yield of the display panel. And when the micro light emitting diode 130 is impacted in use, the stripping resistance of the micro light emitting diode is stronger, so that the micro light emitting diode 130 is bonded with the receiving substrate 110 more firmly and is not easy to fall off, and the reliability of the product is improved.
Based on the same inventive concept, the present application further provides a display device 200, please refer to fig. 11, where fig. 11 is a schematic structural diagram of the display device 200 according to the embodiment of the present application, the display device 200 includes a micro led display panel 100, and the micro led display panel 100 is any one of the micro led display panels 100 according to the embodiments of the present application. It should be noted that, for the embodiments of the display device 200 provided in the present application, reference may be made to the embodiments of the micro led display panel 100, and the same parts are not described again. The display device provided by the application can be: any product or component with a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator and the like.
According to the embodiments, the application has the following beneficial effects:
this application sets up the recess on the pixel is injectd the layer, make little emitting diode be located the recess, and set up the first electrode and the first contained angle that binds between the surface that contacts of electrode and the bottom surface of recess be the obtuse angle, promptly, the side that sets up first electrode on little emitting diode is the inclined plane, so, when little emitting diode from original base plate rendition to receiving substrate on, push down little emitting diode and make little emitting diode embedding recess in, first electrode hugs closely on first binding electrode naturally, can reduce little emitting diode's the degree of difficulty of binding. And because the first electrode is in inclined plane contact with the first binding electrode, dislocation is not easy to occur, and the production yield of the display panel is favorably improved. And when the micro light-emitting diode is impacted in use, the micro light-emitting diode has stronger stripping resistance, so that the micro light-emitting diode is bonded with the receiving substrate more firmly and is not easy to fall off, and the reliability of the product is improved.
The foregoing description shows and describes several preferred embodiments of the present application, but as aforementioned, it is to be understood that the application is not limited to the forms disclosed herein, but is not to be construed as excluding other embodiments and is capable of use in various other combinations, modifications, and environments and is capable of changes within the scope of the inventive concept as expressed herein, commensurate with the above teachings, or the skill or knowledge of the relevant art. And that modifications and variations may be effected by those skilled in the art without departing from the spirit and scope of the application, which is to be protected by the claims appended hereto.
Claims (8)
1. A micro light emitting diode display panel, comprising: a receiving substrate and a plurality of micro light emitting diodes;
the receiving substrate comprises a substrate and a pixel defining layer positioned on one side of the substrate, the pixel defining layer is provided with a plurality of grooves, the openings of the grooves face to the direction pointing away from the substrate by the pixel defining layer, and the micro light-emitting diodes are positioned in the grooves;
at least part of the side wall of the groove is covered with conductive metal, the conductive metal comprises a first binding electrode and a second binding electrode, and the second binding electrode and the first binding electrode are insulated from each other and are arranged oppositely;
the micro light-emitting diode comprises a light-emitting body, a first electrode and a second electrode, wherein the first electrode and the second electrode are respectively electrically connected with the light-emitting body; the light-emitting body comprises a first type semiconductor layer, an active layer and a second type semiconductor layer which are arranged in a stacked mode, wherein the active layer is located between the first type semiconductor layer and the second type semiconductor layer; the stacking direction of the first type semiconductor layer, the active layer and the second type semiconductor layer is vertical to the direction of the plane of the substrate; the first electrode and the second electrode are arranged oppositely in a first direction, and the first direction is perpendicular to the stacking direction; the light-emitting body further comprises a first switching part, a second switching part and a high-resistance layer, wherein the first switching part is in contact with the first type semiconductor, the second switching part is in contact with the second type semiconductor, and the high-resistance layer is used for preventing the first switching part from being in electrical contact with the second type semiconductor and preventing the second switching part from being in electrical contact with the first type semiconductor;
an included angle between the surface of the first electrode, which is in contact with the first binding electrode, and the bottom surface of the groove is an obtuse angle, and an included angle between the surface of the second electrode, which is in contact with the second binding electrode, and the bottom surface of the groove is an obtuse angle;
the bottom surface of the groove further comprises a protrusion, and the protrusion is located between the first binding electrode and the second binding electrode and used for enabling the first binding electrode and the second binding electrode to be insulated from each other.
2. The micro LED display panel of claim 1,
the receiving substrate further comprises a thin film transistor layer comprising a plurality of thin film transistors and located between the substrate and the pixel defining layer;
the first binding electrode extends to the bottom surface of the groove and is electrically connected with the thin film transistor.
3. The micro-LED display panel of claim 2,
the surface of the pixel defining layer far from the substrate is a first surface, the second binding electrodes further comprise portions extending to the first surface, and portions of at least two of the second binding electrodes extending to the first surface are electrically connected.
4. The micro-LED display panel of claim 1,
and an included angle between the part of the side wall, which covers the conductive metal, and the bottom surface of the groove is an obtuse angle.
5. The micro LED display panel of claim 1,
the distance between the surface of the micro light-emitting diode close to the bottom surface of the groove and the bottom surface of the groove is greater than or equal to 0.
6. The micro LED display panel of claim 1,
the material of the conductive metal includes at least one of indium, gold, and tin.
7. A manufacturing method of a micro light emitting diode display panel is characterized by comprising the following steps:
providing a substrate;
forming a pixel defining layer on the substrate, the pixel defining layer being provided with a plurality of grooves having openings directed away from the substrate by the pixel defining layer;
forming a conductive metal on at least part of the side wall of the groove, wherein the conductive metal comprises a first binding electrode and a second binding electrode, and the second binding electrode and the first binding electrode are insulated from each other and are arranged oppositely;
forming a protrusion on a bottom surface of the groove, the protrusion being located between the first and second binding electrodes for insulating the first and second binding electrodes from each other;
placing a micro light-emitting diode in the groove, wherein the micro light-emitting diode comprises a light-emitting body, a first electrode and a second electrode, the first electrode and the second electrode are respectively and electrically connected with the light-emitting body, the first electrode is in contact with and bound to the first binding electrode, and the second electrode is in contact with and bound to the second binding electrode; the light-emitting body comprises a first type semiconductor layer, an active layer and a second type semiconductor layer which are arranged in a stacked mode, wherein the active layer is located between the first type semiconductor layer and the second type semiconductor layer; the stacking direction of the first type semiconductor layer, the active layer and the second type semiconductor layer is vertical to the direction of the plane of the substrate; the first electrode and the second electrode are arranged oppositely in a first direction, and the first direction is perpendicular to the stacking direction; the light-emitting body further comprises a first switching part, a second switching part and a high-resistance layer, wherein the first switching part is in contact with the first type semiconductor, the second switching part is in contact with the second type semiconductor, and the high-resistance layer is used for preventing the first switching part from being in electrical contact with the second type semiconductor and preventing the second switching part from being in electrical contact with the first type semiconductor; the included angle between the surface of the first electrode, which is in contact with the first binding electrode, and the bottom surface of the groove is an obtuse angle, and the included angle between the surface of the second electrode, which is in contact with the second binding electrode, and the bottom surface of the groove is an obtuse angle.
8. A display device comprising the micro light emitting diode display panel according to any one of claims 1 to 6.
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| US11811000B2 (en) | 2020-12-30 | 2023-11-07 | Applied Materials, Inc. | Methods for forming light emitting diodes |
| CN112652253A (en) * | 2021-01-06 | 2021-04-13 | Tcl华星光电技术有限公司 | Display panel and manufacturing method thereof |
| CN113066813B (en) * | 2021-03-18 | 2022-07-29 | 武汉天马微电子有限公司 | Miniature diode display bearing substrate, display panel and display device |
| CN114038951B (en) * | 2021-08-26 | 2022-12-27 | 重庆康佳光电技术研究院有限公司 | Light emitting element transfer method and display panel |
| TWI802059B (en) * | 2021-10-26 | 2023-05-11 | 錼創顯示科技股份有限公司 | Micro light emitting diode display device |
| CN114188462A (en) * | 2021-11-30 | 2022-03-15 | 深圳市华星光电半导体显示技术有限公司 | Display device and method for manufacturing the same |
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